WO2014048944A1

WO2014048944A1 - Optoelectronic component device, method for producing an optoelectronic component device, and a method for operating an optoelectronic component device

Info

Publication number: WO2014048944A1
Application number: PCT/EP2013/069901
Authority: WO
Inventors: Simon SCHICKTANZ; Philipp SCHWAMB; Daniel Steffen Setz
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2012-09-28
Filing date: 2013-09-25
Publication date: 2014-04-03
Also published as: DE102012109271A1

Abstract

In various exemplary embodiments, an optoelectronic component device (100) is provided, the optoelectronic component device (100) comprising: at least one first optoelectronic component (102), designed for picking up and/or providing electromagnetic radiation (108); at least one second optoelectronic component (104), designed for picking up and/or providing electromagnetic radiation (110); an optical radiation mixer (106), arranged in the beam path of the first optoelectronic component (102) and of the second optoelectronic component (104), wherein the optical radiation mixer (106) is designed for picking up, for mixing and for forwarding (112) electromagnetic radiation (108, 110) provided; such that electromagnetic radiation (112) is provided from the optical radiation mixer (106) into the image plane (114) of the optoelectronic component device, and/or wherein the optical radiation mixer (106) is arranged in the image plane (122) of the optoelectronic component device (100) and picks up electromagnetic radiation (112) provided.

Description

description

Optoelectronic component device, method for

Producing an optoelectronic component device and a method for operating an optoelectronic component device

In various embodiments, a

Optoelectronic component device, a method for producing an optoelectronic component device and a method for operating an optoelectronic component device provided.

Optoelectronic components, for example light emitting diodes (LED) or organic light emitting diodes (OLEDs), are becoming increasingly popular and can be used for the illumination of surfaces. A surface can be understood, for example, as a table, a wall or a floor.

Forming electromagnetic radiation of a second wavelength from electromagnetic radiation of a first wavelength is called wavelength conversion.

Wavelength conversion is in optoelectronic

Used for color conversion devices, for example, to facilitate the generation of white light. For example, a blue light turns into a yellow light

converted. The color mixture of blue light and yellow light forms white light. White light can be formed, for example, by means of a blue LED and a wavelength converter. The wavelength converter can

For example, have or be formed from a phosphor that converts blue light into yellow light. Wavelength conversion, however, is often one

Energy loss and thus associated with a loss of efficiency. The efficiency of white organic light-emitting diodes is

limited, due to the shorter shelf life of available blue phosphor molecules (i.e., phosphor molecules that convert blue light) with respect to, for example, red or green phosphor molecules.

In the case of inorganic light-emitting diodes (light emitting diode), the wavelength range associated with green light can be

electromagnetic radiation difficult means

high-efficiency LEDs are realized. Furthermore, LEDs can provide electromagnetic radiation with only a narrow spectrum. Furthermore, LEDs may require a complex cooling. Furthermore, LEDs can be more optical

Components, such as a mirror and / or a

Reflector, need around a directed beam of light

to train.

Due to said problems, it is difficult with OLEDs and LEDs to make white light highly efficient and / or with very good

Provide quality of light.

Furthermore, in both approaches a high technical

Effort necessary to the light color, for example, the wavelength of the provided electromagnetic

Radiation to make tunable.

For example, a great technical effort

necessary for light with different colors,

For example, different correlated color temperature, for example, set dynamically and / or continuously, for example, to different lighting purposes

to adjust.

To produce variable color temperature OLEDs for illumination purposes, two conventional approaches are known.

In a conventional method multi-colored pixels or multi-colored stripes are used, such as pixels can provide red green and / or blue light (RGB pixels). A color mixture can by means of appropriate

Control of the individual, colored pixels are generated. Using wavelength converters to provide electromagnetic radiation with a concrete one

Color valence (color) can lead to a loss of efficiency

lead optoelectronic component device. Furthermore, the quality of light can usually be low,

for example, have a two-tone white. This allows the mixture of different converter materials

to be required. White organic light-emitting diodes with

high-efficiency blue emission system are known

However, these components have only a very limited

Lifespan and / or can not be a deep blue light

emit, for example, with a wavelength of

Intensity maximum less than about 430 nm. In another conventional method, organic layers of an optoelectronic component device sequentially, that is stacked, for example, as

stacked-OLED, trained. A dynamic tuning of the color is limited possible, for example, only with great technical effort and / or with a loss of efficiency.

In various embodiments, a

Optoelectronic component device, a method for producing an optoelectronic component device and a method for operating an optoelectronic component device provided, with which it is possible to compactly form an optoelectronic device, and the spectrum of a perceptible in the image plane

to dynamically change electromagnetic radiation within a color space. In the context of this description, an organic substance, regardless of the respective state of matter, in chemically uniform form, by

characteristic physical and chemical properties characterized compound of the carbon. Furthermore, in the context of this description, an inorganic substance may be one in a chemically uniform form, regardless of the particular state of matter

present, characterized by characteristic physical and chemical properties of the compound without

Carbon or simple carbon compound can be understood. In the context of this description, an organic-inorganic substance (hybrid substance) can be a

irrespective of the particular state of aggregation, in chemically uniform form, characterized by characteristic physical and chemical properties, of compounds containing carbon and free of carbon. In the context of this description, the term "substance" encompasses all of the abovementioned substances, for example an organic substance, an inorganic substance, and / or a hybrid substance Furthermore, in the context of this description, a mixture of substances can be understood to mean components of two or more different substances whose

For example, components are very finely divided. As a class of substance is a substance or mixture of one or more organic substance (s), one or more inorganic substance (s) or one or more hybrid

Understand substance (s). The term "material" can be used synonymously with the term "substance".

As the phosphor, a substance can be understood, the lossy electromagnetic radiation of a

Wavelength in electromagnetic radiation of others

(longer) wavelength, for example by means of phosphorescence or fluorescence. The energy difference between absorbed electromagnetic radiation and emitted electromagnetic radiation may be in phonons, ie heat, be converted and / or by emission of electromagnetic radiation having a wavelength indirectly proportional to the energy difference.

3+

For example, a phosphor can be Ce-doped garnets such as

3+

YAG: Ce and LuAG, for example, (Y, Lu) 3 (Al, Ga) 5O 2: Ce;

2+ 2+

Eu doped nitrides, for example CaAlSiN3: Eu,

2+ 2+

(Ba, Sr) 2S15 8: Eu; Eu doped sulfide, SIONe, SiAlON,

2+

Orthosilicates, for example (Ba, Sr) 2S104: Eu;

Chlorosilicates, chlorophosphates, BAM

(Barium magnesium aluminate: Eu) and / or SCAP, or have formed halophosphate.

An electromagnetic radiation emitting device may in various embodiments

be electromagnetic radiation emitting semiconductor device and / or as an electromagnetic

Radiation emitting diode, as an organic

electromagnetic radiation emitting diode, as an electromagnetic radiation emitting transistor or as an organic electromagnetic radiation

be formed emitting transistor. The radiation may, for example, be light in the visible range, UV radiation and / or infrared radiation. In this context, the electromagnetic radiation emitting device, for example, as a light-emitting diode (light emitting diode, LED) as an organic light emitting diode (organic light emitting diode, OLED), as electromagnetic radiation emitting transistor or as organic

electromagnetic radiation emitting transistor

be educated. The electromagnetic radiation

emitting device can be in different

Embodiments be part of an integrated circuit. Furthermore, a plurality of electromagnetic radiation emitting components may be provided, for example housed in a common housing. In the context of this description, an optoelectronic component device, which at the same time an inorganic optoelectronic device and an organic

Optoelectronic device, as a

optoelectronic hybrid component can be understood.

In other words, in the context of this description, a hybrid optoelectronic device as a

Optoelectronic device to be understood, which has at least one organic optoelectronic device and at least one inorganic optoelectronic device.

In the context of this description, emitting electromagnetic radiation can emit

electromagnetic radiation.

In the context of this description, absorbing electromagnetic radiation may include absorbing

electromagnetic radiation.

In the context of this description, a color valence can be a physiological, colored effect of a

electromagnetic radiation. A

Color valence can be determined as a color locus (Cx, Cy) in a CIE color standard chart.

In the context of this description, the spectrum of an electromagnetic radiation can be understood as an embodiment of an intensity distribution of the electromagnetic radiation as a function of the wavelength of the electromagnetic radiation.

In the context of this description, a different type of two optoelectronic components can be provided if two optoelectronic components differ in at least one optoelectronic property and / or have a different layer cross section. In the context of this description, a cluster of optoelectronic components may also be considered as a group

Optoelectronic device or a pixel can be understood.

In the context of this description, the radiation distribution of electromagnetic radiation can be the spatial

Distribution of intensity, for example one

Brightness distribution of light, and the spatial distribution of color valence, i. the color loci of the spectra

In various embodiments, a

Optoelectronic component device provided, the optoelectronic component device comprising:

at least one first optoelectronic component,

set up to record and / or provide

electromagnetic radiation; at least one second optoelectronic component, configured for receiving and / or providing electromagnetic radiation; an optical radiation mixer, arranged in the beam path of the first optoelectronic component and the second optoelectronic component, wherein the optical

Radiation mixer for recording, mixing and

Forwarding provided electromagnetic radiation is set up; so that electromagnetic radiation from the optical radiation mixer in the image plane of the

Optoelectronic component device is provided and / or wherein the optical radiation mixer in the

Image plane of the optoelectronic component device is arranged and provided electromagnetic

Absorbs radiation.

In one embodiment, the first can

optoelectronic component and / or the second

optoelectronic component multiple optoelectronic

Have components. In one embodiment, the at least one, first optoelectronic component can be set up as at least one organic optoelectronic component. In one embodiment, the at least one second optoelectronic component can be set up as at least one inorganic optoelectronic component.

In one embodiment, at least a first

Optoelectronic component and at least one second optoelectronic component have a different design with respect to further optoelectronic components of the first optoelectronic component and / or the second optoelectronic component.

In one embodiment, the optoelectronic

Component device having a first mode of operation and a second mode of operation. In the first operating mode, the optoelectronic components of the

Optoelectronic component device provide electromagnetic radiation with a first spectrum and provide in the second mode of operation electromagnetic radiation with a second spectrum. With suitable control of the optoelectronic components, the optoelectronic component device in the first operating mode

provide electromagnetic radiation having the same color locus as the electromagnetic radiation provided in the second mode of operation. The

However, in the first mode of operation, the optoelectronic component device may have other application-specific,

Optoelectronic properties than in the second mode of operation, for example, a different efficiency.

In one embodiment, the optoelectronic

Component device to be set up as a hybrid optoelectronic device. In one embodiment, the optical radiation mixer can be set up as a carrier of at least one optoelectronic component, for example the first one

optoelectronic component and / or the second

optoelectronic component.

In other words, the first optoelectronic component and / or the second optoelectronic component can be arranged or formed on or above the optical radiation mixer.

In one embodiment, the optoelectronic

Component device further comprise a scattering layer, wherein the at least one scattering layer is arranged on or above the optical radiation mixer in the beam path of the provided in the optoelectronic component device electromagnetic radiation, for example, is applied and / or the optical radiation mixer is arranged scattering.

The orientation of the electromagnetic radiation

receiving surface and / or radiation-providing surface of the first optoelectronic component, for example, perpendicular to the electromagnetic radiation receiving surface and / or electromagnetic

Radiation-providing surface of the second

optoelectronic component, or arranged at an angle with an amount in a range of about 0 ° to about 90 °.

The large area of the arrangement of the first optoelectronic component with respect to the second optoelectronic component

Bauelementes can be realized, since that of the first optoelectronic device and the second

Optoelectronic device provided

electromagnetic radiation in the optical

Radiation mixer is mixed before this in the Image plane of the optoelectronic component device is provided.

In one embodiment, the two or more

optoelectronic components of the first optoelectronic component and / or the second optoelectronic component

Component have the same or different design. In one embodiment, the two or more

Component at least partially regular or irregular arrangement with respect to the optical

Radiation mixer have.

In one embodiment, the two or more

Optoelectronic components of the first optoelectronic component and / or the two or more optoelectronic components of the second optoelectronic component may be arranged in clusters.

In one embodiment, the clusters may be a regular or irregular array of two or more

have optoelectronic components in a cluster.

In one embodiment, the two or more

Optoelectronic components of the first optoelectronic component and / or the two or more optoelectronic components of the second optoelectronic component may be arranged side by side and / or one above the other.

Optoelectronic components arranged one above another can be configured, for example, as a stacked optoelectronic component, for example a white OLED having at least two emitter layers and / or as one

Optoelectronic component with wavelength converter be configured, for example, as a InGaN diode with phosphor layer.

In one embodiment, the first optoelectronic

Component, for example, an organic optoelectronic device, for example, an OLED, be configured to provide electromagnetic radiation.

In one embodiment, the provided

electromagnetic radiation associated with green and / or red light.

In one embodiment, the provided

electromagnetic radiation associated with blue and / or red light.

In one embodiment, the second optoelectronic component can be configured as an inorganic light-emitting diode, for example electromagnetic radiation

which is associated with a blue light. The first optoelectronic component can be configured as an organic light-emitting diode such that the color mixture of the electromagnetic radiation of the first

optoelectronic component and the second

Optoelectronic device is associated with a white light.

In one embodiment, at least one optical

Component be formed or arranged on or above the optical radiation mixer.

In one embodiment, the optical component may have a scattering layer, a reflector, a converter element and / or an optical lens or be configured as such.

In one embodiment, the optoelectronic

Component device at least one litter layer in Beam path of the provided electromagnetic

Radiation of the first optoelectronic component, the second optoelectronic component and / or the

have optical radiation mixer.

In one embodiment, the optical radiation mixer can be designed to be scattering.

In one embodiment, the litter layer as a

scattering coating or a scattering film to be set up.

The scattering layer can have a matrix in which additives are distributed. The additives may be arranged so that they can scatter electromagnetic radiation, for example particulate additives with another

Refractive index as the matrix and a mean diameter in a range of about 100 nm to about 2 ym.

The particulate additives can beispielswiese a

Having or being formed from metal oxide

For example, an alumina, titania, zirconia, silica or the like. The matrix may for example comprise or be formed from a plastic, for example as a potting material or a film. The matrix as potting material may for example comprise an epoxide, a silicone or a silazane. The matrix as a film may, for example, comprise a polefinefin, a polyacrylate, a polyimide, a polyamide, a polyphthalate or the like. In one embodiment, the scattering layer may have a thickness in a range of about 1 ym to about 500 ym

for example, in a range of about 10 ym to about 200 ym.

In one embodiment, the first optoelectronic

Component above or on the optical radiation mixer be formed and / or over or on the optical

Be arranged radiation mixer.

In one embodiment, arranging the first

Optoelectronic component to be formed on or above the optical radiation mixer cohesively.

In one embodiment, a cohesive arrangement can be formed by gluing the first optoelectronic component on the optical radiation mixer.

In one embodiment, the optoelectronic

Component device further comprising a heat sink, wherein the heat sink in a physical and / or

thermal contact with the first optoelectronic

Component and / or the second optoelectronic component is set up.

In one embodiment, the cooling body can be arranged laterally to the first optoelectronic component, for example in physical contact with the second optoelectronic component.

The heat sink may be designed for cooling the optoelectronic component device, for example, for warming the first optoelectronic component and / or the second optoelectronic component.

In one embodiment, the optically inactive, flat underside of an optoelectronic component for

Heat dissipation be set up, for example as a heat sink.

The heat sink should be set up so that the thermal conductivity, the emissivity, the

Convection coefficient and / or the surface of the

Heatsink is greater than the thermal conductivity, the emissivity, the convection coefficient and / or surface of the first optoelectronic component and / or the second optoelectronic component.

By means of a lateral arrangement of the heat sink with respect to one of the optoelectronic components, for example, a compact design of the optoelectronic

Device device can be realized.

In one embodiment, the optoelectronic

Component device further comprise a reflector, wherein the reflector is arranged such that the

electromagnetic radiation emitted by the optical

Radiation mixer in a different direction than the

Main emission direction of the optoelectronic

Component device is provided, is deflected in the optical radiation mixer in the main emission direction.

In other words: electromagnetic radiation,

For example, light, which is not in the

Main emission direction, for example, the image plane, is provided by the optical radiation mixer can be deflected by the reflector in the optical radiation mixer, for example, be reflected, for example, be totally reflected. This allows the

Radiation distribution characteristics are adapted application specific in the image plane of the optoelectronic component device. In various embodiments, there is provided a method of making an optoelectronic component device, the method comprising: applying a first optoelectronic device to or via an optical beam mixer; Arranging the optical

Radiation mixer in the light path of a second

optoelectronic component or applying a second optoelectronic component on or via the optical radiation mixer. In one embodiment of the method, the optical

Radiation mixer as a carrier at least one

be formed optoelectronic component,

for example, the first optoelectronic component and / or the second optoelectronic component.

In one embodiment of the method, the method may further comprise the formation, application and / or arrangement of a scattering layer in the beam path of the electromagnetic

Have radiation in the optoelectronic

Component device is provided, wherein the

at least one scattering layer is applied and / or formed on or above the optical radiation mixer and / or the optical radiation mixer is formed to be scattering.

In one embodiment, the first can

optoelectronic component and / or the second

Optoelectronic component having two or more optoelectronic components.

In one embodiment of the method, the at least one, first optoelectronic component can be set up as at least one organic optoelectronic component.

In one embodiment of the method, the at least one second optoelectronic component can be set up as at least one inorganic optoelectronic component.

In one embodiment of the method, the first optoelectronic component and / or the second one can / may be used

Optoelectronic component having two or more optoelectronic components.

The first optoelectronic component can be arranged with respect to the second optoelectronic component in this way be that provided by the first optoelectronic device and the second optoelectronic device electromagnetic radiation in the optical

Radiation mixer can be mixed.

In one embodiment of the method, the

Optoelectronic component device as a

be formed opto-electronic hybrid device. In one embodiment of the method, the two or more optoelectronic components of the first

optoelectronic component and / or the second

Optoelectronic component a same and / or

have different design.

In one embodiment of the method, the at least one, first optoelectronic component and the at least one second optoelectronic component can have a

have different design.

In one embodiment of the method, the two or more optoelectronic components of the first

optoelectronic component and / or the second

Optoelectronic component having an at least partially regular or irregular arrangement with respect to the optical radiation mixer.

optoelectronic component and / or the second

Optoelectronic component can be arranged in clusters.

In one embodiment of the method, the clusters may be designed such that the clusters have a regular and / or irregular arrangement of two or more

have optoelectronic components in the clusters. In one embodiment of the method, the clusters can be arranged regularly and / or irregularly with respect to the optical radiation mixer.

optoelectronic component and / or the second

Optoelectronic component side by side and / or are arranged one above the other.

In one embodiment of the method can / can

Method further arranging and / or forming

at least one optical component over or on the optical radiation mixer.

In one embodiment of the method, an optical component as a scattering layer, a reflector, a

Converter element and / or an optical lens can be formed.

In one embodiment of the method, a scattering layer in the optical path of the provided electromagnetic

optical radiation mixer are formed.

The litter layer can be used to homogenize the

Contribute radiation distribution of the electromagnetic radiation in the image plane of the optoelectronic component device.

In one embodiment of the method, the clusters may have a regular or irregular arrangement of two or more optoelectronic components in a cluster.

In one embodiment of the method, the first

optoelectronic component over or on the optical Radiation mixer are formed and / or arranged over or on the optical radiation mixer.

In one configuration of the method, arranging the first optoelectronic component on or above the optical radiation mixer can be formed as a material fit, for example by gluing the first

optoelectronic component on the optical

Radiation mixer.

In one embodiment of the method, the method may further comprise applying and / or arranging a heat sink, wherein the heat sink in physical and / or thermal contact with the first

optoelectronic component and / or the second

optoelectronic component is arranged.

In one embodiment, the heat sink can be arranged laterally to the first optoelectronic component, for example, be arranged in physical contact with the second optoelectronic component.

The heat sink may be used for cooling the optoelectronic component device, for example the first

be set up optoelectronic component.

The heat sinks should be set up so that the thermal conductivity, the emissivity, the

Convection coefficient and / or the surface of the

Heatsink is greater than the thermal conductivity, the emissivity, the convection coefficient and / or the

Surface of the first optoelectronic component and / or the second optoelectronic component.

By means of the lateral arrangement of the heat sink with respect to the first optoelectronic component, the heat dissipation, for example, the cooling of the optoelectronic component

Component device to be increased. In one embodiment, the method may further comprise the arrangement and / or the application of a reflector, wherein the reflector is arranged and / or applied such that the electromagnetic radiation emitted by the optical

Radiation mixer in a different direction than the

Main emission direction of the optoelectronic

In various embodiments, there is provided a method of operating an optoelectronic component device, the method comprising: providing a radiation distribution of electromagnetic radiation in the image plane of an optoelectronic component device, wherein the optoelectronic component device for

Providing electromagnetic radiation in the

Image plane is set up, with the optoelectronic

Component device at least a first

Optoelectronic component and at least one second optoelectronic component, wherein the at least one first optoelectronic component and the at least one second optoelectronic component a

have different design; wherein the at least one first optoelectronic component with a first

Operating current is operated and wherein the at least one second optoelectronic component with a second

Operating current is operated; wherein the at least one first optoelectronic component and the at least one second optoelectronic component provide electromagnetic radiation in an optical radiation mixer and / or receive from an optical radiation mixer; the

Radiation distribution of the electromagnetic radiation provided in the image plane by means of the electromagnetic provided in the optical radiation mixer

Radiation is formed; wherein by means of the first

Operating current and the second operating current time course of the radiation distribution of the electromagnetic radiation in the image plane is formed similar to a waveform. Changing the radiation distribution of the electromagnetic radiation in the image plane of the optoelectronic

Component device can by means of a local and / or temporal modulation of the provided

electromagnetic radiation of at least two

be set different optoelectronic components.

In one embodiment of the method, by means of

Operating currents of the optoelectronic components of the proportion of electromagnetic radiation from a

Optoelectronic device is provided

be set so that the radiation distribution of the electromagnetic radiation in the image plane of the

optoelectronic component device is changed.

By means of a temporal modulation of the first

Operating current / the first operating currents of the first

optoelectronic component and / or the second

Operating current / the second operating currents of the second optoelectronic component can be a dynamic

Color gradient and / or color impression of the area of the

optical radiation mixer provided

electromagnetic radiation can be formed. In other words, the optoelectronic components of the optoelectronic component device can be controlled in such a way that a heterogeneous radiation characteristic which can be tuned in the surface is formed in the image plane of the electromagnetic radiation provided.

In one embodiment, the temporal modulation can be set up as a dynamically tunable radiation distribution be, for example, a dynamically tunable color location within the color space, of the different types of optoelectronic components of the

Optoelectronic component device is clamped.

A dynamic gradient, for example, as

wave-like, moving surface are perceived, for example, similar to a wavy water surface and / or a cloud movement in the sky.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it

Figure 1 is a schematic representation of a

Optoelectronic component device, according to various embodiments;

Figure 2 is a schematic cross-sectional view of a

optoelectronic component, according to various embodiments;

Figure 3 is a schematic plan view of a

Optoelectronic component device, according to various embodiments;

Figure 4 is a CIE color chart with a color space of a

Optoelectronic component device, according to various embodiments; a cross-sectional view of an optoelectronic component device, according to various

configurations;

Figure 6 is a cross-sectional view of an optoelectronic

Component device according to various

configurations; FIG. 7 is a cross-sectional view of an optoelectronic component device according to various embodiments;

Figure 8 is a cross-sectional view of an optoelectronic

Component device according to various embodiments; a cross-sectional view of an optoelectronic component device, according to various embodiments; and

Figure 10 is a schematic plan view of a

Optoelectronic component device in

Operation, according to various embodiments.

In the following detailed description, reference is made to the accompanying drawings, which are part of this

In the description, specific embodiments are shown in which the invention may be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the Scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

Fig.l shows a schematic representation of a

Optoelectronic component device according to

different design.

Shown are a first optoelectronic component 102, a second optoelectronic component 104 and an optical radiation mixer 106. The illustrated optoelectronic component device 100 is, without loss of generality, as

exemplary arrangement of optoelectronic devices 102, 104 to understand an optical radiation mixer 106 around.

The first optoelectronic component 102 and / or the second optoelectronic component 104 may thus be arranged in the optoelectronic component device 100, for example around the optical radiation mixer 106, for example in physical contact, the

electromagnetic radiation 108, 110 from the

Optoelectronic devices 102, 104 is provided in the optical radiation mixer 106, for example. In the illustration is an optoelectronic

Device device shown in the electromagnetic

Radiation of at least two optoelectronic devices 102, 104 is provided. In further embodiments, one of the two or both optoelectronic Components 102, 104 may be configured to receive electromagnetic radiation.

In one embodiment, one of the optoelectronic components 102, 104 may receive electromagnetic radiation, while the at least one other optoelectronic component

Component 104, 102 electromagnetic radiation

provides. An embodiment with a radiation receiving

optoelectronic component 102, 104 and a

radiation-providing opto-electronic device 102, 104 may, for example, as an optical coupler

be furnished.

In one embodiment, the at least two

optoelectronic components 102, 104 receive electromagnetic radiation (not shown). An embodiment with radiation absorbers

Optoelectronic components 102, 104 may be configured, for example, as a photodetector or solar cell.

for example, for different wavelength ranges of the electromagnetic radiation provided.

In one embodiment, the optoelectronic

Components 102, 104 for providing and / or a

Recording be adapted to electromagnetic radiation, for example at the same time, for example by means of changing the operating mode of the optoelectronic component 102, 104, for example, in a bidirectional optical coupler.

The provided electromagnetic radiation 108, 110 is shown schematically in view 100 by means of the arrows 108, 110. The provided electromagnetic radiation 108, 110 may be mixed in the optical radiation mixer 106.

In other words, in the optical radiation mixer can be provided from the first spectrum and / or

recorded electromagnetic radiation of the first optoelectronic component and from the second spectrum provided and / or recorded electromagnetic radiation of the second optoelectronic component, a mixed, third spectrum of electromagnetic radiation are formed.

For example, the third spectrum may have characteristics of the first spectrum and the second spectrum.

The mixed electromagnetic radiation 112 may then at least partially enter the image plane 114 of FIG

Optoelectronic device device 100 may be provided, for example, forwarded.

The properties of mixed electromagnetic

Radiation 112 can by means of the properties of the

optoelectronic components 102, 104 and / or their

Operating modes, for example their operating current,

for example, the intensity of the provided

electromagnetic radiation, can be adjusted.

In one embodiment, the first optoelectronic component 102 may be designed as an organic optoelectronic

Be configured device, for example, a planar organic light-emitting diode, for example according to one of

Embodiments of the descriptions of Fig.2.

In one embodiment, the organic light emitting diode 102 may be a single-color and / or multi-color organic

Be arranged light emitting diode, for example as an OLED with several identical or different emission zones, for example, different emitter layers. In one embodiment, the second optoelectronic component 104 can be embodied, for example, as an inorganic

be optoelectronic device 104 set up

for example, an inorganic light emitting diode 104,

For example, a GaN diode, InGaN diode or InGaAlP diode.

In one embodiment, the first optoelectronic

Device 102 as an inorganic optoelectronic

Component 102, for example, an inorganic light emitting diode, be set up.

In one embodiment, the second optoelectronic component 104 may be designed as an organic optoelectronic

Component 104, for example an organic light-emitting diode, be set up.

In one embodiment, the first optoelectronic

Device 102 larger or smaller than the second

be formed optoelectronic device 104,

for example, a larger, radiation-providing

Have surface. In one embodiment, the optoelectronic

Components 102, 104 have a round, circular, angular, rectangular, polygonal shape of the surface provided by the electromagnetic radiation and / or

is recorded.

In one embodiment, the first optoelectronic component 102 and / or the second optoelectronic component

Component 104 a plurality of optoelectronic components

exhibit .

The plurality of optoelectronic components can

for example, have a different design. The plurality of optoelectronic components can

be formed, for example, side by side or one above the other. Constructed optoelectronic components can, for example, as one above the other in the same

Beam path arranged optoelectronic components and / or be set up as an optoelectronic component with a wavelength converter.

An example of an optoelectronic component arranged one above the other in the same beam path can be, for example, a white organic light-emitting diode. An example of an optoelectronic component with a wavelength converter can be, for example, an InGaN diode with a phosphor layer.

The optical radiation mixer 106 may be in a

Embodiment as waveguide and / or beam conductor

be furnished.

A beam guide, in various embodiments, is a conductor for conducting electromagnetic radiation. The beam conductor may be a device suitable for

electromagnetic radiation is transparent or at least substantially transparent.

A substantially transparent beam conductor can

for example, a transmission incident

have electromagnetic radiation greater than about 90%.

For example, a beam director may be an elongated,

For example, flat shape, such as dimension, have, for example, be formed in a spatial direction much longer or much shorter than in the other two spatial directions. The beam line of electromagnetic radiation can be carried out in the beam conductor, for example due to internal reflection on an outer wall of the beam guide due to a higher refractive index of the material of the beam guide than the refractive index of the medium surrounding the beam guide.

The internal reflection can be called internal total reflection

and / or be set up by means of a mirroring of the outer wall of the beam guide.

The outer wall can also be referred to as the boundary surface of the beam guide.

For example, the beam conductor fibers, a tube or a rod, whereby the electromagnetic

Radiation can be transported over a distance. The beam conductor may also be referred to as optical fiber, optical fiber, optical fiber or optical fiber.

The beam conductor may comprise glass fibers and / or as

Fiber optic cables are called.

The beam conductor may be plastic, for example

For example, polymeric fibers, PMMA, polycarbonate and / or Hard Clad silica have. Furthermore, the beam conductor can be planar

Be configured optical waveguide structures (PLWL).

Furthermore, the beam conductor may be in the form of a rod, a bolt, a small plate, a cuboid, a cube, a hollow cylinder or other similar geometric figures. The optoelectronic components 102, 104 may comprise further optical elements, for example a lens, for example a converging lens or diverging lens, or, for example, a wavelength converter, for example a phosphor layer.

2 shows a schematic cross-sectional view of an optoelectronic component, according to various

Exemplary embodiments.

The organic optoelectronic component 200,

for example, electromagnetic radiation

Providing organic electronic component 200, for example, an organic light emitting device 200, for example, an organic light emitting diode 200 may include a carrier 202.

The carrier 202 may be used, for example, as a support for electronic elements or layers, for example

light-emitting elements, serve. For example, the carrier 202 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable material. Further, the carrier 202 may be a

Plastic film or a laminate with one or more plastic films or be formed from it. Of the

Plastic may include one or more polyolefins (eg, high or low density polyethylene (PE) or

Polypropylene (PP)) or be formed therefrom.

Furthermore, the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),

Polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. The carrier 202 may be one or more of the above

have mentioned substances. The carrier 202 may include or be formed from a metal or metal compound, for example copper, silver, gold, platinum, aluminum, steel or the like. A carrier 202 comprising a metal or a

Metal compound may also be formed as a metal foil or a metal-coated foil.

The carrier 202 may be translucent or even transparent.

The term "translucent" or "translucent layer" can be understood in various embodiments that a layer is permeable to light,

for example, for the light generated by the light emitting device, for example one or more

Wavelength ranges, for example, for light in one

Wavelength range of the visible light (for example, at least in a partial region of the wavelength range of 380 nm to 780 nm). For example, is below the term

"Translucent layer" in various embodiments to understand that essentially the whole in one

Structure (for example, a layer) coupled

Quantity of light is also coupled out of the structure (for example, layer), wherein a portion of the light can be scattered in this case.

The term "transparent" or "transparent layer" can be understood in various embodiments that a layer is transparent to light

(For example, at least in a portion of the

Wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is coupled out of the structure (for example layer) substantially without scattering or light conversion.

Thus, "transparent" in different

In the case that, for example, a light-emitting monochrome or limited in the emission spectrum

electronic component is to be provided, it is sufficient that the optically translucent layer structure at least in a partial region of the wavelength range of the desired monochrome light or for the limited

Emission spectrum is translucent. In various embodiments, the organic

Light emitting diode 200 (or the light-emitting devices according to the above or later described

Embodiments) as a so-called top and / or bottom emitter. A top and / or bottom emitter can also be referred to as an optically transparent component, for example a transparent organic light-emitting diode.

On or above the carrier 202 may be in different

Embodiments optionally be arranged a barrier layer 204. The barrier layer 204 may include or consist of one or more of the following: alumina, zinc oxide, zirconia, titania,

Hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide,

Silicon nitride, silicon oxynitride, indium tin oxide,

Indium zinc oxide, aluminum-doped zinc oxide, as well

Mixtures and alloys thereof. Furthermore, the

Barrier layer 204 in various embodiments have a layer thickness in a range of about 0.1 nm (one atomic layer) to about 5000 nm, for example, a layer thickness in a range of about 10 nm to about 200 nm, for example, a layer thickness of about 40 nm.

On or above the barrier layer 204 may be an electrically active region 206 of the organic optoelectronic

Component 200 may be arranged. The electrically active

Area 206 may be considered the area of the organic

Optoelectronic device 200 are understood in which an electric current for the operation of the organic

optoelectronic component 200 flows. In various embodiments, the electrically active region 206 may include a first electrode 210, a second electrode 214, and a first electrode 210 have organic functional layer structure 212, as will be explained in more detail below.

Thus, in various embodiments, on or above the barrier layer 204 (or, if the barrier layer 204 is not present on or above the carrier 202), the first electrode 210 (eg, in the form of a first

Electrode layer 210) may be applied. The first electrode 210 (hereinafter also referred to as lower electrode 210) may be formed of or be made of an electrically conductive substance, such as a metal or a conductive conductive oxide (TCO) or a layer stack of multiple layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent, conductive substances, for example

Metal oxides, such as zinc oxide, tin oxide,

Cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). In addition to binary metal oxygen compounds, such as, for example, ZnO, SnO 2, or Ιη 2 O 3, ternary metal oxygen compounds, such as AlZnO, for example, include

Zn2SnO4, CdSnO3, ZnSnO3, Mgln204, GalnO3, Zn2In20s or

In4Sn30] _2 or mixtures of different transparent conductive oxides to the group of TCOs and can be used in various embodiments.

Furthermore, the TCOs do not necessarily correspond to one

stoichiometric composition and may also be p-doped or n-doped. In various embodiments, the first

Electrode 210 comprises a metal; for example, Cu, Ag, Pt, Au, Mg, Al, Ba, In, Ca, Sm or Li, and compounds, combinations or alloys of these substances. In various embodiments, the first

Electrode 210 may be formed from a stack of layers of a combination of a layer of a metal on a layer a TCO, or vice versa. An example is one

Silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. In various embodiments, the first

Electrode 210 one or more of the following substances

alternatively or additionally to the abovementioned substances: networks of metallic nanowires and particles, for example of Ag; Networks of carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.

Furthermore, the first electrode 210 can comprise electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.

In various embodiments, the first

Electrode 210 and the carrier 202 may be translucent or transparent. In the case where the first electrode 210 comprises or is formed of a metal, the first electrode 210 may have, for example, a layer thickness of less than or equal to approximately 25 nm, for example one

Layer thickness of less than or equal to approximately 20 nm,

For example, the first electrode 210 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm

Embodiments, the first electrode 210 a

Layer thickness in a range of about 10 nm to about 25 nm, for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.

Further, in the case where the first electrode 210 has or is formed of a conductive transparent oxide (TCO), the first electrode 210 may be, for example, one Layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness in a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of

about 100 nm to about 150 nm.

Furthermore, if the first electrode 210 is made of, for example, a network of metallic nanowires, for example of Ag, which may be combined with conductive polymers, a network of carbon nanotubes may be used.

Nanotubes, which may be combined with conductive polymers, or are formed of graphene layers and composites, the first electrode 210, for example, a

Layer thickness in a range of about 1 nm to about 500 nm, for example, a layer thickness in a range of about 10 nm to about 400 nm,

For example, a layer thickness in a range of

about 40 nm to about 250 nm. The first electrode 210 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode.

The first electrode 210 may be a first electrical

Contact pad, to which a first electrical

Potential (provided by a power source (not shown), for example, a power source or a voltage source) can be applied. Alternatively, the first electrical potential may be applied to the carrier 202 and then indirectly applied to the first electrode 210. The first electrical potential may be, for example, the ground potential or another predetermined reference potential. Furthermore, the electrically active region 206 of the

organic optoelectronic component 200 a

organic functional layer structure 212, the is applied or formed on or above the first electrode 210.

The organic functional layer structure 212 may comprise one or more emitter layers 218, for example with fluorescent and / or phosphorescent emitters, and one or more hole line layers 216 (also referred to as hole transport layer (s) 220). In

According to various embodiments, alternatively or additionally, one or more electron conduction layers 216 (also referred to as electron transport layer (s) 216) may be provided.

Examples of emitter materials used in the organic optoelectronic device 200 according to various

Embodiments of the Emitter Layer (s) 218

organic or organic

organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2- (bis 2-pyridyl) phenyl- (2-carboxypyridyl) -iridium III), green phosphorescent

Ir (ppy) 3 (tris (2-phenylpyridine) iridium III), red

Phosphorus Ru (dtb-bpy) 3 * 2 (PFg) (tris [4, 4'-di-tert-butyl- (2, 2 ') -bipyridine] ruthenium (III) complex) and blue-fluorescent DPAVBi (4, 4 Bis [4- (di-p-tolylamino) styryl] biphenyl), green fluorescent TTPA

(9, 10-bis [N, -di- (p-tolyl) -amino] anthracene) and red

fluorescent DCM2 (4-dicyanomethylene) -2-methyl-6-yl-ulolidyl-9-enyl-4H-pyran) as a non-polymeric emitter. Such non-polymeric emitters can be deposited by means of thermal evaporation, for example. Furthermore, can

Polymer emitters are used, which in particular by means of a wet chemical process, such as a spin-on process (also referred to as spin coating), are deposited. The emitter materials may be suitably embedded in a matrix material. It should be noted that other suitable

Emitter materials are also provided in other embodiments.

The emitter materials of the emitter layer (s) 218 of the

organic optoelectronic device 200 may

For example, be selected so that the organic optoelectronic component 200 emits white light. The emitter layer (s) 218 can be several different colors (for example blue and yellow or blue, green and red)

have emitting emitter materials, alternatively

The emitter layer (s) 218 may also be composed of several sub-layers, such as a blue-fluorescent emitter layer 218 or blue-phosphorescent

Emitter layer 218, a green phosphorescent

Emitter layer 218 and a red phosphorescent

Emitter layer 218. By the mixture of different colors can the emission of light with a white

Color impression result. Alternatively, it can also be provided to arrange a converter material in the beam path of the primary emission generated by these layers, which at least partially absorbs the primary radiation and a

Secondary radiation emitted at different wavelengths, so that from a (not yet white) primary radiation through the

Combination of primary radiation and secondary radiation gives a white color impression.

The organic functional layer structure 212 may generally include one or more electroluminescent layers. The one or more electroluminescent

Layers may or may comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules ("small molecules") or a combination of these substances functional layer structure 212 one or more

have electroluminescent layers, which as

Hole transport layer 220 is or are, so that, for example, in the case of an OLED an effective

Hole injection into an electroluminescent layer or an electroluminescent region is made possible.

Alternatively, in various embodiments, the organic functional layer structure 212 may include one or more functional layers, which may be referred to as a

Electron transport layer 216 is executed or are, so that, for example, in an OLED an effective

Electron injection into an electroluminescent layer or an electroluminescent region is made possible. As a substance for the hole transport layer 220 can

for example, tertiary amines, carbazole derivatives, conductive

Polyaniline or Polyethylendioxythiophen be used. In various embodiments, the one or more electroluminescent layers may or may not be referred to as

be carried out electroluminescent layer.

In various embodiments, the

Hole transport layer 220 may be deposited on or over the first electrode 210, for example, deposited, and the emitter layer 218 may be on or above the

Hole transport layer 220 may be applied, for example, be deposited. In various embodiments, electron transport layer 216 may be deposited on or over the emitter layer 218, for example, deposited.

In various embodiments, the organic functional layer structure 212 (ie, for example, the sum of the thicknesses of hole transport layer (s) 220 and

Emitter layer (s) 218 and electron transport layer (s) 216) have a maximum thickness of approximately 1.5 μm, for example a maximum layer thickness of approximately 1.2 μm, for example a maximum layer thickness of approximately 1 μm, for example a maximum layer thickness of approximately 800 μm nm, For example, a layer thickness of at most about 500 nm, for example, a layer thickness of at most about 400 nm, for example, a layer thickness of about 300 nm. In various embodiments, the organic functional layer structure 212, for example

Stack of several directly stacked

have organic light-emitting diodes (OLEDs), wherein each OLED may for example have a layer thickness of at most about 1.5 ym, for example, a layer thickness of at most about 1.2 ym, for example, a layer thickness of at most about 1 ym, for example, a layer thickness of about 800 or more nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of approximately approximately 300 nm. In various exemplary embodiments, the organic functional layer structure 212

For example, have a stack of two, three or four directly superposed OLEDs, in which case, for example, organic functional layer structure 212 may have a layer thickness of at most about 3 ym.

Optionally, the organic optoelectronic component 200 may generally comprise further organic functional layers,

for example, arranged on or above the one or more emitter layers 218 or on or above the electron transport layer (s) 216, which serve to further improve the functionality and thus the efficiency of the organic optoelectronic component 200.

On or above the organic functional layer structure 212 or optionally on or above the one or more further organic functional layers

Layer structures may be the second electrode 214

be applied (for example in the form of a second electrode layer 214). In various embodiments, the second

Electrode 214 have the same substances or be formed therefrom as the first electrode 210, wherein in

various embodiments metals are particularly suitable.

In various embodiments, the second

Electrode 214 (for example, in the case of a metallic second electrode 214), for example, have a layer thickness of less than or equal to about 50 nm,

for example, a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm,

For example, a layer thickness of less than or equal to about 25 nm, for example, a layer thickness of less than or equal to about 20 nm, for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.

The second electrode 214 may generally be formed similarly to, or different from, the first electrode 210. The second electrode 214 may be formed of one or more of the materials and with the respective layer thickness in various embodiments, as described above in connection with the first electrode 210. In different

Embodiments, the first electrode 210 and the second electrode 214 are both formed translucent or transparent. Thus, the organic optoelectronic device 200 shown in Fig.l can be formed as a top and bottom emitter (in other words, as a transparent light emitting device 200).

The second electrode 214 can be used as the anode, ie as

hole-injecting electrode may be formed or as

Cathode, that is as an electron-injecting electrode. The second electrode 214 may have a second electrical connection to which a second electrical connection

Potential (which is different from the first one)

electric potential) provided by the

Energy source, can be applied. For example, the second electrical potential may have a value such that the difference from the first electrical potential has a value in a range of about 1.5V to about 20V, for example, a value in a range of about 2.5V to about 15V, for example, a value in a range of about 3V to about 12V.

On or above the second electrode 214 and thus on or above the electrically active region 206 may optionally be an encapsulation 208, for example in the form of a

Barrier thin film / thin film encapsulation 208. In the context of this application, a "barrier thin film" 208 or a "barrier thin film" 208 can be understood as meaning, for example, a layer or a layer structure which is suitable for providing a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture). and oxygen, to form. In other words, the barrier film 208 is formed to be resistant to OLED damaging agents such as

Water, oxygen or solvents can not or at most be penetrated to very small proportions.

According to one embodiment, the barrier film 208 may be formed as a single layer (in other words, as

Single layer) may be formed. According to an alternative embodiment, the barrier thin film 208 may comprise a plurality of sublayers formed on each other. In other words, according to one embodiment, the

Barrier thin film 208 as a stack of layers (stack)

be educated. The barrier film 208 or one or a plurality of partial layers of the barrier thin film 208 may be formed, for example, by means of a suitable deposition method, for example by means of a

Atomic Layer Deposition (ALD) according to one embodiment, e.g. plasma-enhanced atomic layer deposition (PEALD) or plasmaless

Atomic deposition method (Plasma-less Atomic Layer

Deposition (PLALD)), or by means of a chemical

Gas phase deposition process (Chemical Vapor Deposition

(CVD)) according to another embodiment, e.g. one

plasma enhanced chemical vapor deposition (PECVD) or plasmaless vapor deposition (plasma-less

Chemical Vapor Deposition (PLCVD)), or alternatively by other suitable deposition methods.

By using an atomic layer deposition process (ALD) very thin layers can be deposited. In particular, layers can be deposited whose layer thicknesses are in the atomic layer region.

According to one embodiment, in a

Barrier thin film 208 having multiple sub-layers, all sub-layers are formed by an atomic layer deposition process. A layer sequence comprising only ALD layers may also be referred to as "nanolaminate".

According to an alternative embodiment, in a

A barrier film 208 having a plurality of sublayers may include one or more sublayers of the barrier film 208 by a deposition method other than one

Atomic layer deposition processes are deposited,

for example by means of a gas phase separation process.

The barrier film 208 may, according to one embodiment, have a layer thickness of about 0.1 nm (one atomic layer) to about 1000 nm, for example a layer thickness from about 10 nm to about 100 nm according to a

Embodiment, for example, about 40 nm according to an embodiment. According to an embodiment in which the barrier thin film 208 has a plurality of partial layers, all partial layers may have the same layer thickness. According to another

Design, the individual sub-layers of

Barrier thin layer 208 have different layer thicknesses. In other words, at least one of

Partial layers have a different layer thickness than one or more other of the sub-layers.

The barrier film 208 or the individual sub-layers of the barrier film 208 may be formed as a translucent or transparent layer according to an embodiment. In other words, the barrier film 208 (or the individual sub-layers of the barrier film 208) may be made of a translucent or transparent substance (or mixture that is translucent or transparent).

According to an embodiment, the barrier thin layer 208 or (in the case of a layer stack having a plurality of partial layers) one or more of the partial layers of the

Barrier film 208 comprising or being formed from any of the following: alumina, zinc oxide, zirconia, titania, hafnia, tantalum oxide,

Lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, and mixtures and alloys

the same. In various embodiments, the barrier film 208 or (in the case of a

Layer stack having a plurality of sublayers) one or more of the sublayers of the barrier film 208 comprise one or more high refractive indexes, in other words one or more high content materials

Refractive index, for example with a refractive index of at least 2. In various embodiments, an adhesive 224 and / or on or above the barrier film 208 may be used

Protective varnish 224 may be provided, by means of which, for example, a cover 226 (for example, a glass cover 226, a metal foil cover 226, a sealed

Plastic film cover 226) is secured to the barrier film 208, for example, adhered thereto. In

various embodiments, the optically

translucent layer of adhesive and / or protective varnish 224 have a layer thickness of greater than 1 ym,

For example, a layer thickness in a range of

about 10 ym to about 50 ym. In different

Embodiments, the adhesive may include or be a lamination adhesive.

In the layer of adhesive 224 (also referred to as

Adhesive layer) or the protective varnish 224 can in

various embodiments still light scattering

Be embedded particles that can lead to a further improvement of the color angle distortion and the Auskoppeleffizienz. In various embodiments, as light-scattering particles, for example, dielectric

Be provided scattering particles such as metal oxides such as silica (S1O2), zinc oxide (ZnO), zirconia (ZrO2), indium-tin oxide (ITO) or indium-zinc oxide (IZO), gallium oxide (Ga20 _a ) alumina, or titanium oxide , Other particles may be suitable, provided that they have a

Have refractive index, which is different from the effective refractive index of the matrix of the translucent layer structure, for example, air bubbles, acrylate, or glass bubbles. Furthermore, for example, metallic nanoparticles,

Metals such as gold, silver, iron nanoparticles, or

may be provided as light-scattering particles.

In various embodiments, between the second electrode 214 and the layer of adhesive and / or Protective varnish 224 nor an electrically insulating layer

(not shown) are applied or be

For example, SiN, for example, with a layer thickness in a range of about 300 nm to about 1.5 ym, for example, with a layer thickness in a range of about 500 nm to about 1 ym to protect electrically unstable materials, for example during a

wet-chemical process. In various embodiments, the adhesive may be configured to have an index of refraction itself that is less than or greater than the refractive index of the cover 226. In one embodiment, an adhesive may be, for example, a low refractive index adhesive, such as an acrylate having a refractive index of approximately 1.3. In one embodiment, a

For example, the adhesive may be a high-refractive adhesive which has, for example, high-refraction, non-scattering particles and has an average refractive index which is approximately the average refractive index of the organic

functional layer structure, for example in a range of about 1.7 to about 2.0.

Furthermore, several different adhesives

be provided, which form an adhesive layer sequence.

It should also be noted that in various

Embodiments can also be dispensed with entirely an adhesive 224, for example in embodiments in which the cover 226, for example made of glass, are applied to the barrier thin film 208 by means of, for example, plasma spraying.

In one embodiment, the cover 226, for example made of glass, for example by means of a frit bonding / glass soldering / seal glass bonding applied by means of a conventional glass solder in the geometric edge regions of the organic optoelectronic device 200 with the barrier film 208 become. In various embodiments, the / may

Cover 226 and / or the adhesive 224 have a refractive index (for example, at a wavelength of 633 nm) of 1.55.

Furthermore, in various embodiments

additionally one or more antireflection coatings

(for example combined with the encapsulation 208,

for example, the barrier film 208) in the

organic optoelectronic device 200 may be provided. In one embodiment of the optoelectronic

Component device 100 may be the first optoelectronic component 102 and / or the second optoelectronic component

Device 104 as an organic optoelectronic

Device 200 to be set up.

3 shows a schematic plan view of a

Optoelectronic component device, according to various embodiments. Shown is a top view 300 of a configuration of an optoelectronic component device 100 similar or identical to an embodiment of the descriptions of FIG.

Shown in plan view 300, are optoelectronic components 306, 308 arranged laterally to form an optical radiation mixer 106.

The side of the optical radiation mixer 106th

arranged optoelectronic components 306, 308 can be understood as a second optoelectronic device 104 and, for example, have a different design, for example, electromagnetic radiation with record a different color valence and / or

provide .

The optoelectronic component 306 arranged on the left side of the optical radiation mixer 106 may also be referred to as the second optoelectronic component 104. The optoelectronic component 308 arranged in the view to the right of the optical radiation mixer could, within the scope of the description, be a further, second optoelectronic component 104 or else a third optoelectronic component

Component be designated.

In one embodiment, at least one optoelectronic component 306 of the second optoelectronic component 104 may be configured as an inorganic light emitting diode 306, wherein the inorganic light emitting diode 306 provides electromagnetic radiation in a wavelength range which is associated with red light. In one embodiment, at least one optoelectronic component 308 of the second optoelectronic component 104 may be configured as an inorganic light emitting diode 308, wherein the inorganic light emitting diode 308 provides electromagnetic radiation in a wavelength range that is associated with blue light.

In one embodiment, the first optoelectronic

Device 102 (not visible) according to one of

Embodiment of the description of Fig.l or Fig.2

be furnished.

In yet another embodiment, the first carrier can comprise or be formed from an inorganic substance. In one embodiment, the optoelectronic

Component device having a heat sink 304.

The heat sink 304 may be in physical and / or thermal contact with the first, for example optoelectronic component 102 and / or second

be optoelectronic device 104 set up

for example, be glued, for example by means of a thermal compound.

In one embodiment, the heat sink 314 for cooling the optoelectronic component device 100

be configured, for example, by the heat sink 304, a larger surface area, emissivity, a larger

Convection coefficient and / or a larger one

Thermal conductivity has, as at least one further region of the optoelectronic component device 100, which is in thermal contact with the heat sink, for example, the first optoelectronic device 102 and / or the second optoelectronic device 104th

In one embodiment, the optoelectronic

Component device having a reflector 302.

The reflector 302 may, for example, on or on the

be fixed optical radiation mixer 106, for example, be glued or vapor-deposited.

The reflector 302 may be formed such that

electromagnetic radiation in the optical

Radiation mixer 106 is reflected by the reflector 302, for example, with a proportion of incident electromagnetic radiation of greater than about 50%, for example greater than about 90%, for example

is totally reflected.

By means of the reflector 302, a selection of the

Image plane 114 of the optoelectronic component device into which electromagnetic radiation 112 is provided by the optical radiation mixer 106 and / or is received by the optical radiation mixer 106. 4 shows a CIE color chart with a color space of an optoelectronic component device, according to FIG

different configurations. Shown is a CIE Farbtafein 400 with the color grades Cy 402 and Cx 404 with the entries as different

Color Locations.

Also shown are the correlated

Color temperature curve of the electromagnetic radiation of a black body 406 and the spectral color line 408.

Furthermore, the color space 410 for an optoelectronic component device 300 with three optoelectronic

Component 102, 306, 308 with different

illustrated optoelectronic properties, for example according to one of the embodiment of Figure 3.

The illustrated color space 410 is merely as

Illustrating the principle of operation of the

Optoelectronic device device 100 to understand.

In a further embodiment, the optoelectronic component device 100 can have, for example, 2, 3 (illustrated), 4, 5, 6 or more optoelectronic components of the same and / or different design, wherein the optoelectronic components can be arranged in the optoelectronic component apparatus 300 at least in an ordered manner or irregularly ,

The one of the optoelectronic devices 102, 306, 308 of a type available and / or receivable

electromagnetic radiation 108, 110 may be the corner points of the achievable color space 410 of the optoelectronic

Component device 100, 300 represent.

By way of illustration, without limitation, the

Generality, the color space on the example of a radiation providing optoelectronic component device 300.

Within the color space 410 (indicated by the

dashed lines), each color locus Cx, Cy can be adjusted by means of the optoelectronic component device 300, i. be achieved. A concrete color locus with the chromaticity coordinates Cx, Cy can be adjusted by the optoelectronic properties of the optoelectronic

Components 102, 306, 308 are set, for example, in which the operating current of the optoelectronic components 102, 306, 308 are set such that the

Color mixture of the individual colors of the optoelectronic

Components of the spanned color space generates the desired color.

In other words, by means of the different ones

optoelectronic properties of the optoelectronic

Components 102, 306, 308 may be in the optical

Radiation mixer 106 each color location Cx 404, Cy 402 are set within the spanned color space 410.

In other words, that of the optical

Radiation mixer 106 provide electromagnetic radiation 112 may occupy each color location Cx 404, Cy 402 within the color space 410.

The configuration of the color space 410 may be dependent on the optoelectronic properties, for example of the type, and the arrangement of the optoelectronic components 102, 104 in the optoelectronic

Device device 100, 300.

In one embodiment, the connecting line between two end points of the color space, for example the

Connecting line 412, a non-linear shape, for example, by one of the optoelectronic components of the vertices an optoelectronic device and a Wavelength converter has, in other words, one of the vertices by means of a color mixture, for example, a wavelength conversion, is formed. 5 shows a cross-sectional view of an optoelectronic component device, according to various embodiments.

FIG. 5 shows a cross-sectional view 500 of a configuration of an optoelectronic component device 100

represented, for example, equal to one of the embodiments of the optoelectronic component device of Figure 3.

In one embodiment, the first optoelectronic

Component be configured as an organic optoelectronic device 200, for example, be similar or equal to a configuration of the descriptions of Figure 2 set up.

Additionally shown in the cross-sectional view 500, the geometric edge regions of the first optoelectronic component 102, 200 are.

In the geometric border areas of the first

optoelectronic component 102, 200 is the

Contacting the first electrode 210 and the second

Detect electrode 214.

The electrodes 210, 214 may be arranged in physical and / or electrical contact with contact pads 504 for electrically contacting the first optoelectronic component 102, 200 with external electrical connections (not shown).

The second electrode 214 may be electrically insulated with respect to the first electrode 210 by means of a resist 502, for example a polyimide. In one embodiment, the second electrode 214

reflective for electromagnetic provided

Be set up radiation. In one embodiment, the encapsulation of the second electrode 214 by means of the layers 208, 224, 226 may be optional.

In one embodiment of the optoelectronic

Component device 100, the carrier 202 of the first optoelectronic component may additionally be configured as an optical radiation mixer 106, for example comprising or being formed from a glass and / or plastic. In other words, the first optoelectronic component 102, 200 can be formed on or above the optical radiation mixer 106, 202.

The first optoelectronic component can be so

are formed so that electromagnetic radiation 108 is provided in the optical radiation mixer 106, 202.

On or above the optical radiation mixer 106, a first scattering layer 510 may be applied. The first

Litter layer 510 may, for example, the coupling of electromagnetic radiation from the optical

Increase radiation mixer 106. The scattering layer 510 may, for example, be arranged between the optical radiation mixer 106 and the image plane 114

For example, the first scattering layer 510 may be similar or equal to the adhesive layer 224 according to any one of

Embodiments of the descriptions of Figure 2 be set up.

In one embodiment, the first scattering layer 510 may also be configured as a scattering film, wherein the scattering film may have scattering particles. The scattering particles For example, the scattering film may be configured similar to the scattering particles or additives of the adhesive layer 224. In addition, the scattering film may have a carrier, wherein the carrier of the scattering film, for example, a

Plastic film, a glass foil or a metal foil

can have. The scattering film may, for example, a thickness in one

Range from about 50 ym to about 500 ym, for example, in a range of about 100 ym to about 200 ym. The scattering film can, for example, on or over the

optical radiation mixer 106 are laminated,

for example, by means of an adhesive, wherein the adhesive may be configured similar to the adhesive layer 224. Furthermore, the optoelectronic component device 100 can have at least one second optoelectronic component, shown as laterally to the optical

Radiation mixer 106 arranged optoelectronic

Components 306, 308.

In one embodiment, the at least one second optoelectronic component 104 may have a plurality of optoelectronic components. In the cross-sectional view 500, two optoelectronic components 306, 308 can be seen as the second optoelectronic component 104. The two optoelectronic component 306, 308 of the second

Optoelectronic component 104 may have a

have different design, so the two

optoelectronic components different

electromagnetic radiation 506, 508 in the optical

Provide radiation mixer 106, for example

electromagnetic radiation associated with blue and / or red light. The mixture of the electromagnetic radiation 108, 506, 508 can take place in the optical radiation mixer 106 and / or in the scattering layer 510.

The optical radiation mixer 106 may provide electromagnetic radiation 112 that is a function of the

electromagnetic radiation 108, 506, 108 provided by the optoelectronic devices 102, 104 and in optical contact with the optical radiation mixer 106.

By changing the operating current of the optoelectronic devices 102, 104, the optical properties of the electromagnetic radiation 112 provided by the optical beam mixer 106 can be adjusted and / or changed.

6 shows a cross-sectional view of an optoelectronic component device, according to various embodiments.

FIG. 6 shows a cross-sectional view 600 of a configuration of an optoelectronic component device 100

represented, for example, similar or equal to one of the embodiments of the optoelectronic component device of Figure 3 and Figure 5.

In one embodiment, the optoelectronic

Component device similar or equal to one of

Embodiments of the optoelectronic component device 100 in the cross-sectional view 600 a second

Have litter layer 602.

The second diffusion layer 602 may, for example, be similar to or the same as the first diffusion layer 510, according to any one of

Embodiments of the descriptions of Figure 5 be set up. The second scattering layer 602 may, for example, be arranged between the carrier 202 and the optional barrier layer 204 or

between the carrier 202 and the first electrode 210

be arranged.

The mix of electromagnetic provided

Radiation 108, 506, 508 may in this embodiment in the scattering layers 510, 602 and the optical

Radiation mixer 106 done.

In one configuration, the second scattering layer 602 can be configured differently from the first scattering layer 510, for example, be designed to be scattering for another wavelength range of the electromagnetic radiation.

7 shows a cross-sectional view of an optoelectronic component device, according to various embodiments.

FIG. 7 shows a cross-sectional view 700 of an embodiment of an optoelectronic component device 100

represented, for example, similar or equal to one of the configuration of the optoelectronic component device of Figure 3 and Fig.6. In one embodiment, the optoelectronic

Device device 100 similar or the same

Configuration of the optoelectronic component device 100 may be configured. The cross-sectional view 700 shows a scattering, optical radiation mixer 106, 702, wherein in the beam path of the

scattering, optical radiation mixer 702 scattering

Particles are distributed. For example, the scattering particles may be similar or equal to the scattering particles of the adhesive layer 224.

The mix of electromagnetic provided

Radiation 108, 506, 508, for example the color mixture, can be done in the embodiment in the scattering layers 510 and the scattering, optical radiation mixer 702.

In a further embodiment, the optoelectronic component device 100 can have a second scattering layer 602 and a scattering, optical radiation mixer 702.

In a further embodiment, the scattering layers 510, 602 may be optional and a scattering effect only by means of a scattering, optical radiation mixer 702

be formed.

In a further embodiment optoelectronic

Device device 100, no scattering layers 510, 602 and / or a light-scattering, optical radiation mixer 702 are set up, but only radiation mixer 106 without scattering additives.

The scattering effect can then be formed, for example, by means of a rough surface of the electromagnetic radiation 112 providing surface.

8 shows a cross-sectional view of an optoelectronic component device according to various embodiments. FIG. 8 shows a cross-sectional view 800 of an embodiment of an optoelectronic component device 100

represented, for example, similar or equal to one of the configuration of the optoelectronic component device of Figure 3 and Figure 5.

In the illustrated embodiment of

Cross-sectional view 800 of the optoelectronic

Device device 100 may be between the

Barrier layer 204 and the first electrode 210 and the carrier 202, a second scattering layer 602 be set up similar or equal to the embodiment of the descriptions of Figure 6. Furthermore, in a configuration of the optoelectronic component device 100, no first scattering layer 510 can be formed. Furthermore, in one embodiment of the optoelectronic component device 100, the second optoelectronic

Component 104 optoelectronic components of a type (shown). Furthermore, in one embodiment of the optoelectronic component device 100, the first optoelectronic

Component 102 may be multicolored.

A multicolored first optoelectronic component 102 may, for example, electromagnetic radiation 802

which is associated with a green light, red light, and / or red and green light mixture. In one embodiment, the first optoelectronic

Device 102 for providing multicolored

electromagnetic radiation 802,

For example, as an optoelectronic device 102 with multiple emission zones, for example, several

Emitter layers 218, from which electromagnetic radiation of different wavelength is provided.

In one embodiment, the second optoelectronic component 104 may provide electromagnetic radiation 108 in the optical radiation mixer 106, for example a monochrome light, for example a blue light.

In one embodiment, the second optoelectronic component 104 can be embodied, for example, as an inorganic

Optoelectronic device 104, for example, an organic light emitting diode 104, for example, an InGaN diode 104, GaN diode 104 or InGaAlP diode 104 may be set up. One or more second optoelectronic components 104 may be arranged laterally to the optical radiation mixer 106, for example, be glued onto the

Side walls of the optical beam mixer 106 and / or on the side walls of the optical beam mixer 106 may be aligned such that the provided by the optoelectronic device electromagnetic radiation 108, 110, 112 can be directed into the optical beam mixer 106. The optical radiation mixer 106 may then comprise a mixed electromagnetic radiation 112 of the first optoelectronic component 102 and the second one

optoelectronic device 104 provide.

9 shows a cross-sectional view of an optoelectronic component device according to various embodiments.

Shown is an optoelectronic component device 100, for example, similar or equal to one of

Embodiments of the optoelectronic component device of Figure 3 and Fig.6.

In a further embodiment of the optoelectronic

Component device 100, shown in the schematic cross-sectional view 900, may be similar to the embodiment of the descriptions of Figure 6, the first opto-electronic

Component 102 may be formed with second litter layer 602 on or above the carrier 202.

In one embodiment, the optoelectronic

Component device a separate optical

Radiation mixer 106 have. In other words the

Carrier 202 of the optoelectronic component is not set up as an optical radiation mixer 106. Instead, the carrier 202 with the first optoelectronic component 102 can be fixed on or above the optical radiation mixer 106, for example with a coherent connection 902. In other words, the carrier 202 can be applied or fixed on or above an optical radiation mixer 106, for example, be connected to substance-locking

for example, be glued.

In one embodiment, the cohesive connection 902 may be similar or the same as the adhesive layer 224, for example, the interlocking connection 902 may be transparent and / or translucent.

In one embodiment, the interlocking connection 902 may include scattering centers. Fig. 10 shows a schematic plan view of a

Optoelectronic component device in operation, according to various embodiments.

In the schematic plan view 1000 is a snapshot of an optoelectronic component device 100,

for example, similar or equal to an embodiment of the descriptions of Figure 3 to Figure 9 shown in an operating mode according to various embodiments. The current-time diagrams 1002, 1004, 1006, 1008, 1010 show the operating current of selected optoelectronic components as a function of time.

In one embodiment, the at least one first

optoelectronic component 102 and the at least one second optoelectronic component 104 are driven separately, for example individually; and / or collectively, for example correlated, for example in clusters

and / or clustered.

In one embodiment, the two or more

optoelectronic components of the first optoelectronic component 102 and / or the second optoelectronic component Component 104, for example, separately, for example, individually; and / or collectively, for example correlated, for example, within a cluster and / or as clusters.

In one embodiment of an operating mode of a

Optoelectronic component device, shown in view 1000, for example, the first

optoelectronic component 102, for example, configured as a white-light-emitting organic light-emitting diode 102, and optoelectronic components 306 of a type, for example a red light-emitting light emitting diode 306, the second optoelectronic component 104 a

have static control. A static control can, for example, have a time-constant operating current, illustrated for a selection of optoelectronic components in the current-time diagrams 1002, 1006, 1010.

In one embodiment of the operating mode of

Optoelectronic component device, the

Operating current of a further optoelectronic component 308, for example, configured as a blue-light-emitting light emitting diode, the second optoelectronic component 104, a time-varying operating current, such as a dynamic control having.

The further optoelectronic components 308 of the second optoelectronic component can be, for example

individually controlled, shown in the current-time diagrams 1004, 1008.

By means of the dynamic control of the

optical radiation mixer 106 provided

electromagnetic radiation 112 is a radiation distribution of the electromagnetic radiation similar or equal to a wavy surface, for example a water surface, a dynamic surface, for example a

Cloud movement of the firmament, in the image plane 114 exhibit. The radiation distribution can be modulated in time, for example dynamically tunable.

In further modes of operation further color locations and / or areal heterogeneous radiation distributions can be realized, for example, similar to a reddish sky or another color mixture.

In various embodiments, a

Optoelectronic component device, a method for producing an optoelectronic component device and a method for operating an optoelectronic component device provided, with which it is possible to provide and / or absorb a wide range of electromagnetic radiation, for example, a wide Farbvalenz, for example a large color space. In addition, a deep blue hue using the

optoelectronic component device can be adjusted. Organic optoelectronic devices that provide, for example, a red-green light can be made highly efficient and with long life.

However, a high is missing to produce white light

more efficient, long lasting, blue dye, for example, phosphor. However, blue light can be provided high efficiency by means of LEDs.

Compared to an optoelectronic

However, component device with exclusively LEDs results by means of the hybrid component, the advantage that can be dispensed with lossy wavelength conversion.

In addition, the heat dissipation of the optoelectronic

Component device can be divided into the arrangement of LEDs and OLEDs. As a result, the requirements for the cooling system can be reduced. By a heat sink laterally with respect to the main radiation direction of the provided electromagnetic radiation can be arranged, the optoelectronic component device may have a higher efficiency and / or more compact design.

Furthermore, by means of the various refinements of the optoelectronic component device, the service life with respect to conventional optoelectronic

Component device can be extended with similar optoelectronic properties.

Since the first optoelectronic component and that second optoelectronic component with different

Circuits, such as control circuits, can be operated, it is easily possible, a dynamic

form tunable lighting, for example, with adjustable Farbvalenz. As a result, the provision of a color location in the color space of the possible color valencies can be set dynamically.

Furthermore, additional optical components for

Direction of the electromagnetic radiation provided become optional, since the optoelectronic

Component device already has a directing arrangement of the optoelectronic components.

Claims

claims

1. Optoelectronic component device (100),

comprising:

At least one first optoelectronic component

(102) configured to receive and / or provide electromagnetic radiation (108);

• at least one second optoelectronic

A device (104) configured to receive and / or provide electromagnetic radiation (110);

An optical radiation mixer (106) arranged in the beam path of the first optoelectronic component (102) and the second optoelectronic component (104), wherein the optical

Radiant mixer (106) for receiving, mixing and forwarding (112)

electromagnetic radiation (108, 110) is set up;

• such that electromagnetic radiation (112) from the optical radiation mixer (106) is provided in the image plane (114) of the optoelectronic component device and / or wherein the optical radiation mixer (106) is arranged in the image plane (114) of the optoelectronic component device (100) and provided

receives electromagnetic radiation (112);

Wherein the second optoelectronic component (104) is arranged laterally to the optical radiation mixer (106) with respect to the first

optoelectronic component (102).

2. Optoelectronic component device according to

Claim 1,

wherein the first optoelectronic component (102) and / or the second optoelectronic component (104) a plurality of optoelectronic components (306, 308).

Optoelectronic component device (100) according to one of claims 1 or 2,

wherein the plurality of optoelectronic components (306, 308) of the first optoelectronic component (102) and / or of the second optoelectronic component (104) have the same or different construction

exhibit .

Optoelectronic component device (100) according to one of claims 1 to 3,

wherein the at least one first optoelectronic

Component (102) at least one organic

Optoelectronic component (102) and wherein the at least one second optoelectronic component (104) comprises at least one inorganic optoelectronic component (104).

Optoelectronic component device (100) according to one of claims 1 to 4,

wherein at least one optoelectronic component is formed on or above the optical radiation mixer (106).

Optoelectronic component device (100) according to one of claims 1 to 5,

further comprising a scattering layer (510, 602), a converter element, a reflector (302) and / or an optical lens above or on the optical

Radiation mixer (106).

Optoelectronic component device (100) according to one of claims 1 to 6,

further comprising at least one scattering layer (502, 602), wherein the at least one scattering layer (502, 602) in the optical path in the optoelectronic Device device (100) provided

electromagnetic radiation (108, 110, 112) is applied on or above the optical radiation mixer (106) and / or the optical radiation mixer (106) is arranged as a scattering optical radiation mixer (702)

is set up.

Method for producing an optoelectronic

Device device (100), the method comprising:

Applying a first optoelectronic

Component (102) on or via an optical radiation mixer (106);

Arranging the optical radiation mixer (106) in the light path of a second optoelectronic component (104) or applying a second optoelectronic component (104) onto or via the optical radiation mixer (106); ;

Wherein the second optoelectronic component (104) is arranged or applied laterally to the optical radiation mixer (106) with respect to the first optoelectronic component (102).

Method according to claim 8,

wherein the first optoelectronic component (102) and / or the second optoelectronic component (104) are formed above or on the optical radiation mixer (106) and / or arranged above or on the optical radiation mixer (106). 10. The method according to claim 9,

wherein arranging the first optoelectronic

Component (102) and / or the second

opto-electronic device (104) on or above the optical radiation mixer (106) as a

integral connection is formed.

Method according to one of claims 8 to 10, wherein the optoelectronic component device (100) is formed with at least one organic optoelectronic component (102) and with at least one inorganic optoelectronic component (104).

Method for operating an optoelectronic

A device device (100), the method comprising: providing a radiation distribution of

electromagnetic radiation (112) in the image plane

(114) of an optoelectronic component device

(100),

• wherein the optoelectronic component device

(100) is arranged to provide electromagnetic radiation (112) in the image plane (114), the optoelectronic

Component device (100) has at least one first optoelectronic component (102) and at least one second optoelectronic component (104), wherein the at least one first

optoelectronic component (102) and the

at least one second optoelectronic component (104) have a different design; wherein the at least one first optoelectronic

Device (102) is operated with a first operating current and wherein the at least one second optoelectronic component (104) is operated with a second operating current;

Wherein the at least one first optoelectronic component (102) and the at least one second optoelectronic component (104)

provide electromagnetic radiation (108, 110) to an optical radiation mixer (106) and / or receive from an optical radiation mixer (106);

• where the radiation distribution of the in the image plane

(114) provided electromagnetic

Radiation (112) by means of in the optical Radiation mixer (106) provided

electromagnetic radiation is formed; wherein by means of the first operating current and the second operating current, a time profile of the radiation distribution of the electromagnetic

Radiation in the image plane (114) is formed similar to a waveform.