WO2014036886A1

WO2014036886A1 - Reaction chamber for vapor deposition process

Info

Publication number: WO2014036886A1
Application number: PCT/CN2013/081816
Authority: WO
Inventors: 孙仁君; 左然; 何晓崐; 叶芷飞; 谭华强; 田益西
Original assignee: 光达光电设备科技（嘉兴）有限公司
Priority date: 2012-09-07
Filing date: 2013-08-20
Publication date: 2014-03-13
Also published as: CN103074595A; TW201410907A

Abstract

The technical problem solved by embodiments of the present invention is to provide a reaction chamber for a vapor deposition process. The reaction chamber comprises: a tray, the upper surface of the tray being used for placing a substrate; a chamber side wall surrounding the tray; and a member, at least one part of the member surrounding the edge of the tray, and the member being used for improving uniformity of an airflow field, a temperature field or a concentration field at the edge of the tray. With the embodiments of the present invention, the uniformity of the airflow field, the temperature field or the concentration field on the tray, especially at the edge of the tray is improved, and uniformity of an epitaxial material layer formed on the substrate is improved.

Description

Reaction Chamber for Vapor Deposition Process This application claims priority to Chinese Patent Application entitled "Reaction Chamber for Vapor Deposition Process" submitted to the Chinese Patent Office on September 7, 2012, application number 201210330818. The entire contents of which are incorporated herein by reference. TECHNICAL FIELD The present invention relates to deposition apparatus, and more particularly to a reaction chamber for a vapor deposition process.

BACKGROUND OF THE INVENTION Metal organic chemical vapor deposition (M0CVD) is a chemical vapor deposition process developed on the basis of vapor phase epitaxy (VPE). It uses organic compounds of Group III and II elements and hydrides of Group V and VI elements as reaction gases for crystal growth, and performs epitaxial deposition processes on sapphire virgin land or other villages by thermal decomposition reaction.

Epitaxial material layers of III-V, II_VI compound semiconductors and their multiple solid solutions. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing the structure of a reaction chamber of a prior art M0CVD apparatus. The reaction chamber includes: a tray 10 having an upper surface 11 and a lower surface 12 opposite to the upper surface 11, the upper surface 11 for placing a substrate, the lower surface 12 forming a groove; the gas supply device 30 Located above the upper surface of the tray 10, the gas supply device 30 is configured to supply a reaction gas to the substrate; the chamber sidewall 20 surrounds the tray 10-week, the chamber sidewall 20 and the tray An exhaust passage is formed between the edges of the 10, and the reacted gas flows from the exhaust passage to the outside of the reaction chamber; a chamber cover 40 is located above the chamber sidewall 20 and the gas supply device 30, the cavity The chamber top cover 40 and the chamber side wall 20 define a space for the reaction chamber, and the reaction chamber is isolated from the outside; the heating unit 50 is located below the recess of the lower surface of the tray 10, and the heating unit 50 By heating the tray 10; supporting the rotating structure 60, connected to the lower surface 12, the supporting rotating structure 60 is used to support the tray 10 and drive the tray 10 to rotate.

With continued reference to FIG. 1, gas flows from the gas supply device 30 to the upper surface 11, and a reaction occurs on the bottom of the upper surface 11, and the reacted gas is exhausted between the chamber sidewall 20 and the tray 10. The channel exits the exterior of the reaction chamber. In practice, it has been found that the uniformity of the layer of epitaxial material formed on the substrate by the existing reaction chamber needs to be further improved, especially the uniformity of the layer of epitaxial material formed on the substrate at the edge of the tray needs to be improved.

SUMMARY OF THE INVENTION The technical problem to be solved by embodiments of the present invention is to provide a reaction chamber for a vapor deposition process, which improves the uniformity of the airflow field, temperature field or concentration field on the tray in the reaction chamber, especially at the edge of the tray. Sexuality improves the uniformity of the layer of epitaxial material formed on the village floor.

In order to solve the above problems, an embodiment of the present invention provides a reaction chamber for a vapor deposition process, including: a tray having an upper surface for placing a substrate; a chamber sidewall surrounding the tray for one week, further comprising: a member At least a portion of the edge of the tray is used to improve the uniformity of the airflow field, temperature field, or concentration field at the edge of the tray.

Optionally, the tray has a lower surface opposite the upper surface, and the thickness of the member in the direction of the lower surface of the upper surface gradually decreases.

Optionally, an exhaust passage is formed between the member and the tray, the member having a side surface facing one side of the tray, and a side surface of the member is a smooth transition.

Optionally, the side surface of the member is an inner curved surface.

Optionally, an exhaust passage is formed between the member and the tray, the member having a side surface facing one side of the tray, the side surface being an inner curved surface.

Optionally, the side surface extends above a plane in which the upper surface lies.

Optionally, an air passage is formed between the member and the side wall of the chamber, and the member has a side surface facing one side of the side wall of the chamber, and the side surface is a convex curved surface.

Optionally, the side surface does not exceed the upper surface of the tray.

Optionally, the tray has a lower surface opposite the upper surface, the side surface extending below the plane of the lower surface.

Optionally, a curved transition is made between the edge of the upper surface of the tray and the side of the tray.

Optionally, the member has a side surface facing one side of the tray, a side view of the member The reflectivity of the facing light is not less than the reflectivity of the sidewall of the chamber to the light.

Optionally, the member has a side surface facing one side of the tray, and the side surface of the member faces the light having a reflectance not less than the reflectance of the edge of the tray to the light.

Optionally, the side surface of the member has a roughness of not more than 0.08 m, so that the side surface of the member forms a mirror surface, and the reflection of the light is specular reflection.

Optionally, the side surface of the member has a heat resistant reflective layer that remains stable during the vapor deposition process.

Optionally, the material of the heat resistant reflective layer is silicon carbide.

Optionally, the member is annular in cross section in a direction parallel to the upper surface of the tray. Optionally, the member is constructed by connecting two or more sub-members.

Optionally, the member is a torus.

Optionally, a heat insulating structure is embedded in the member for reducing heat loss from the edge of the tray to the side wall of the chamber.

Optionally, a side surface of the heat insulating structure facing one side of the tray is an inward arc.

Optionally, the heat insulating structure includes an insulating gas containing layer embedded in the member, and a heat insulating gas containing layer defining a space in the member. The space is for accommodating the heat insulating gas, and the heat insulating coefficient of the heat insulating gas is lower than a thermal conductivity of the member.

Optionally, the shape of the side of the insulating gas containing layer facing the side of the tray is a concave orphan.

Optionally, the heat insulating structure is a heat insulating block embedded in the member, and the heat insulating block has a thermal conductivity lower than a thermal conductivity of the member.

Optionally, the method further includes: a gas supply device located above the upper surface of the tray, the gas supply device for supplying a reaction gas to the substrate, one end of the member being fixed to the gas supply device.

Optionally, the method further includes: a chamber top cover located above the upper surface of the tray, and one end of the member is fixed to the chamber top cover. Optionally, the member is fixed to the side wall of the chamber.

Optionally, there is a gap between the member and the sidewall of the chamber.

Optionally, there is a gap between the member and the tray.

Compared with the prior art, the embodiment of the invention has the following advantages:

The reaction chamber provided by the embodiment of the invention has a member at the edge of the tray, and the member improves the uniformity of the airflow field, the temperature field or the concentration field at the edge of the tray;

Further optimized, the member is used for heat insulation between the tray and the side wall of the chamber, effectively reducing the loss of heat from the edge of the tray to the side wall of the chamber, improving the efficiency of heating the tray, and the member along the tray The thickness of the upper surface to the lower surface of the tray is gradually reduced, which compensates for the problem that the temperature of the edge of the tray is uneven due to the gradual decrease of the temperature of the lower surface of the tray to the upper surface of the tray, and better plays the side wall of the tray and the chamber The effect of insulation, shielding and insulation between them improves the uniformity of the temperature field of the edge of the tray and the upper surface of the entire tray;

Further optimized, the member may also form an exhaust passage with the tray, and the side surface of the member facing the tray may be a smooth transition including the inner curved surface, so that the reacted gas is from the tray When the surface flows to the edge of the tray, the gas retention at the smooth transition is reduced or eliminated, thereby making the airflow field at the edge of the tray more uniform, since the temperature field and the airflow field also affect the concentration field of the reactive gas at the edge of the tray. Therefore, the concentration distribution of the reaction gas at the edge of the tray is also improved, and the uniformity of the epitaxial material layer formed on the village bottom at the edge of the tray is improved;

Further preferably, the member and the tray may also constitute an exhaust passage, the member having a side surface facing one side of the tray, the side surface being a concave curved surface so as to be in the exhaust passage at the edge of the tray Forming a smooth transition that facilitates reducing or eliminating the dead space of the gas at the edge of the tray, thereby improving the uniformity of the gas field at the edge of the tray; or/and the side walls of the tray and member and the chamber The exhaust passage may also be formed, the member having a side surface facing one side of the tray, the side surface being a convex curved surface, thereby forming a smooth transition in the exhaust passage at the edge of the tray, the smooth transition facilitating Reduces or eliminates gas dead space at the edge of the tray, improving gas at the edge of the tray Field uniformity;

Further optimized, the side surface of the member extends above the upper surface of the tray or below the lower surface of the tray, thereby further improving the uniformity of the gas field, temperature field and concentration field at the edge of the tray;

Further optimized, a curved transition between the edge of the upper surface of the tray and the side of the tray further improves the uniformity of the gas field, temperature field and concentration field at the edge of the tray;

Further preferably, the member has a side surface facing one side of the tray, and a side surface of the member has a reflectance to light of not less than a reflectance of the side wall of the chamber to the light, and is not disposed between the side wall of the chamber and the tray The light from the tray can be reflected by the side surface of the member toward the tray, as the light from the member, part of the tray is absorbed by the side wall of the chamber, resulting in low heating efficiency to the tray, and the temperature at the edge of the tray is low. Improved light utilization and heating efficiency of the tray, improving the uniformity of the temperature field at the edge of the tray;

Further preferably, the side surface of the member facing the tray has a reflectivity to light that is not less than the reflectance of the edge of the tray to the light such that the side surface can reflect light from the edge of the tray back to the tray, further The utilization of light at the edge of the tray and the heating efficiency of the tray are improved, and the uniformity of the temperature field at the edge of the tray is improved; further precisely, the side surface of the member facing the tray is specularly reflected by the light. Thereby, most of the light at the edge of the tray is reflected, so that the utilization of light at the edge of the tray and the heating efficiency of the tray are higher, and the uniformity of the temperature field at the edge of the tray is better;

Further preferably, the member has a ring shape in a section parallel to the direction of the upper surface of the tray, or the member has two or more sub-members connected or the member is a torus, or the member may Connected to the chamber side wall, the chamber top cover or the gas supply, or there may be a gap between the member and the tray and between the member and the chamber sidewall so that the structure, shape, size and The distribution is flexibly adjusted to obtain the optimum temperature, concentration, and airflow fields at the edge of the tray;

Further optimized, a heat insulating structure is formed in the member to make the member better The sidewall of the chamber is isolated from the edge of the tray to reduce the heat loss from the edge of the tray to the side wall of the chamber, further improving the uniformity of the temperature field, the airflow field and the concentration field at the edge of the tray.

DRAWINGS

1 is a schematic structural view of a reaction chamber of a prior art M0CVD apparatus; FIG. 2 is a schematic structural view of a reaction chamber according to a first embodiment of the present invention;

Figure 3 is a schematic cross-sectional view of the reaction chamber along the AA line;

Figure 4 is a schematic structural view of a member of a second embodiment of the present invention;

Figure 5 is a schematic view showing the structure of a reaction chamber according to a third embodiment of the present invention;

Figure 6 is a schematic structural view of a reaction chamber according to a fourth embodiment of the present invention;

Figure 7 is a schematic structural view of a reaction chamber according to a fifth embodiment of the present invention;

Figure 8 is a schematic structural view of a reaction chamber of a sixth embodiment of the present invention;

Figure 9 is a schematic structural view of a member of a first embodiment of the present invention;

Figure 10 is a schematic view showing the structure of a member of a second embodiment of the present invention.

detailed description

The uniformity of the layer of epitaxial material formed on the substrate by the existing reaction chamber needs to be further improved, especially the uniformity of the layer of epitaxial material formed on the substrate at the edge of the tray needs to be improved. It has been found that the uniformity of temperature field, airflow field and concentration field at the edge of the tray has a great influence on the uniformity of the existing vapor deposition process. The prior art neglects the optimization of the structure at the edge of the tray, which cannot fully utilize the layer of epitaxial material formed on the bottom of the village, especially the edge of the tray. As the size of the tray becomes larger, the structure at the edge of the tray is opposite to the tray. The influence of the temperature field at the edge, the concentration length, and the uniformity of the airflow field is more pronounced, and the area that cannot be utilized at the edge of the tray is increased. Generally, large-sized pallets are difficult to manufacture and costly, and the area of the edge of the tray cannot be utilized, which further increases the cost of the user. Therefore, it is necessary to optimize the structure of the existing reaction chamber, especially at the edge of the tray, to improve the airflow field, the temperature field, the uniformity of the concentration field and the uniformity of the vapor deposition process on the entire tray.

Before the design of the edge of the tray, the inventor compared the temperature of the prior art tray Field, concentration field and airflow field were studied and analyzed. Specifically, as shown in FIG. 1, when performing a vapor deposition process (such as a M0CVD process), the gas supply device 30 supplies a reaction gas to the substrate on the upper surface 11 of the tray 10, and the tray 10 is heated by the heating unit below it. 50 is heated to be in a high temperature state (temperature is usually greater than 500 degrees Celsius), the reaction gas supplied from the gas supply device 30 is usually in a low temperature state due to cooling (temperature is usually lower than 200 degrees Celsius), and the reaction gas flows from the gas supply device 30 to the bottom surface of the substrate. In the chemical reaction, the reacted gas flows out of the reaction chamber through an exhaust pipe between both sides of the edge of the tray 10 and the side wall 20 of the chamber. During this process, the reaction gas exchanges heat with the upper surface 11 of the tray 10, and the heat exchange is more severe at the edge of the tray 10 due to the concentrated discharge of the gas, which causes the temperature at the edge of the tray 10 to be low, resulting in The temperature field of the upper surface 11 of the tray 10 is not uniform. The heat dissipation rate at the edge of the tray 10 is faster than the heat dissipation rate in the middle of the tray 10, which also affects the uniformity of the temperature field at the edge of the tray 10. Since the chamber side wall 20 is generally in a cooled state (temperature does not exceed 200 degrees Celsius), the temperature difference between the chamber side wall 20 and the edge of the tray 10 also causes heat exchange between the two, which heat exchange is reduced on the one hand. The temperature of the edge of the tray 10 causes the temperature distribution at the edge of the tray 10 to be uneven, and on the other hand, the heating efficiency of the tray 1 G by the heating unit 50 is also lowered.

More importantly, the inventors have also found that since the heating unit 50 is placed under the tray 10, the temperature of the lower surface to the upper surface of the tray 10 is gradually lowered, so that the temperature of the upper surface 11 of the tray 10 is low, in the tray 10 The temperature drop at the edge is more pronounced. The prior art does not consider the temperature change in the direction from the upper surface 11 to the lower surface 12 of the tray 10, which also causes uneven temperature distribution of the edge of the tray 10, which further causes the temperature of the edge of the upper surface 11 of the tray 10. The field is uneven.

For the airflow field, during the flow of gas from the upper surface 11 of the tray 10 to the exhaust passage formed between the chamber side wall 20 and the tray 10, the direction of the gas is changed along the horizontal direction of the upper surface 1 1 to In the vertical direction, a gas dead angle is formed at the corner between the gas supply device 30, the edge of the tray 10, and the side wall 20 of the chamber, and some of the gas will stay there, which will not only affect the deposition process (such as M0CVD) reaction process. The switching of different reaction gases may even cause a backflow of gas, and the dead angle of the gas at the corners is also liable to cause vortexing of the gas at the edge of the tray 10, resulting in uneven airflow at the edge of the tray 10. Since the temperature field and the airflow field and the concentration field of the deposition process, particularly the M0CVD process, interact with each other, when the temperature field and the airflow field at the edge of the tray 10 are not uniform, the concentration field at the edge of the tray 1 Q is hooked. Sexuality cannot be maintained, and eventually the uniformity of the layer of epitaxial material formed on the bottom of the substrate at the edge of the tray 10 is not ideal.

The present invention optimizes the internal structure of the reaction chamber by optimizing the edge of the tray, mainly to improve the edge of the tray, thereby improving the temperature field, the concentration field, and the uniformity of the airflow field at the edge of the tray. Optimized in conjunction with problems with existing pallet structures, including changes in temperature from the lower surface to the upper surface of the tray, heat dissipation at the edge of the tray, heat exchange between the tray and the sidewall of the chamber, and tray and Problems such as heat exchange between gases.

Specifically, the reaction chamber for a deposition process proposed by the present invention includes: a tray having an upper surface for placing a substrate; a chamber sidewall surrounding the tray, further comprising: a member, at least a portion surrounding the The edge of the tray is used to improve the uniformity of the airflow field, temperature field or concentration field at the edge of the tray. By setting the components at the edge of the tray, the shape, structure, structure, distribution, layout, material, etc. of the components are optimally selected and laid out to improve the uniformity of temperature field, concentration field or airflow field distribution at the edge of the existing tray.

The technical solution of the present invention will be described in detail below with reference to specific embodiments. First, please refer to Fig. 2, which is a schematic view showing the internal structure of a reaction chamber according to a first embodiment of the present invention. As an embodiment, the reaction chamber is a reaction chamber of a chemical vapor deposition apparatus. In this embodiment, the reaction chamber is a reaction chamber of a M0CVD apparatus for the M0CVD process. The reaction chamber has a chamber sidewall 200. As an embodiment, the chamber sidewall 200 has a chamber sidewall cooling unit (not shown) corresponding thereto. The chamber sidewall cooling unit is configured to cool the chamber sidewall 200 such that the temperature of the chamber sidewall 200 does not exceed 800 degrees Celsius, preferably, the temperature of the chamber sidewall 200 does not exceed 200 degrees Celsius. In one embodiment of the invention, the chamber sidewall 200 temperature does not exceed 100 degrees Celsius. A chamber top cover 400 is disposed above the chamber sidewall 200. The chamber top cover 400 and the chamber side wall 200 define the space of the reaction chamber and provide isolation of the reaction chamber from the exterior.

As an embodiment, a gas supply device 300 is provided below the chamber top cover 400. The gas supply device 300 may be a shower head. In the present embodiment, the gas supply device 300 is a close-coupled shower head (CCS) capable of vertically injecting a reaction gas downward.

A tray 100 is disposed inside the reaction chamber. As an embodiment, the material of the tray 100 is graphite. In a preferred embodiment of the invention, the surface of the tray 100 may be coated or plated with a silicon carbide coating (not shown), and the silicon carbide coating has good stability. Specifically, in the M0CVD process, the silicon carbide coating does not react with the reaction gas, and the silicon carbide coating structure is dense, preventing the gas from reacting with the graphite to damage the tray 10 or generating particles, affecting the process yield, and carbonizing. The coefficient of thermal expansion of the silicon coating is comparable to that of graphite, and does not fall off the graphite at high temperatures, affecting the yield of the process.

The tray 100 has an upper surface 101 and a lower surface 102 opposite the upper surface 101. The upper surface 101 is the surface of the tray 100 facing the chamber top cover 400 and the gas supply device 300, and the upper surface 101 is for placing the substrate. As a preferred embodiment, the edge of the upper surface 101 and the side surface of the tray 100 are arcuately transitioned, such that the reaction gas from the gas supply device 300 passes through the arc surface after flowing vertically to the upper surface 101. After the smooth transition to the vertical direction, the direction of the airflow at the edge of the tray 100 is prevented from being abrupt, and the uniformity of the airflow field at the edge of the tray 100 can be improved.

With continued reference to FIG. 2, the lower surface 102 of the tray 100 is coupled to a rotary support mechanism 600 having a hollow cylindrical shape, and the rotary support mechanism 600 is used to support the tray 100. As an alternative embodiment, the rotary support mechanism 600 is also used to drive the tray 100 to rotate at a certain speed.

A heating unit 500 is disposed below the tray 100. As an embodiment, the heating unit 500 is located within the rotating support structure 600, which saves space throughout the chamber. In order that the heating unit 500 can better heat the upper surface 101, as an alternative embodiment, a groove can be formed in the portion of the tray 100 facing the heating unit 500, which is advantageous in improving the efficiency of heating the heating unit 500 to the tray.

As an embodiment, member 700 surrounds the edge of tray 100. As an alternative embodiment, the member 700 wraps around the edge of the tray 100.

As an alternative embodiment, member 700 is affixed to the edge of gas supply 300 On the chamber top wall 400. In other embodiments, the member 700 can also be secured only to the edge of the gas supply device 300 or to the chamber top wall 400, even though the member 700 can be supported within the reaction chamber by a separate support structure.

In this embodiment, the member 700 and the tray 100 constitute an exhaust passage. The reacted gas exits the reaction chamber through the edge 100 of the tray 100 and the member 700. The member 700 has a side surface (not shown) facing one side of the tray, the side surface being a concave curved surface to form a smooth transition at the edge of the tray 100, reducing or eliminating gas at the edge of the tray 100 The dead space of the gas between the members 700 reduces or eliminates problems such as gas retention at the edges of the tray 100, gas vortexing, etc., and improves the uniformity of the airflow field at the edge of the tray 100. As a preferred embodiment, the side surface of the member 700 facing the tray 100-side extends above the plane of the upper surface 101 of the tray 100, which improves the uniformity of the airflow field, temperature field and concentration field at the edge of the tray 100. .

As a preferred embodiment, the side surfaces also extend below the plane in which the lower surface 102 of the tray 100 is located, which improves the uniformity of the airflow field, temperature field, and concentration field at the edge of the tray 100.

The member 700 faces a side surface of the tray 100 as a part of the exhaust passage, and the air flow can be better guided to smoothly flow the gas from the upper surface 101 of the tray 100 along the exhaust passage. As a preferred embodiment of the present invention, the member 700 is also used for thermal insulation between the tray 100 and the chamber sidewall 200 due to the optimized configuration of the member 700, reducing the edge of the tray 100 and the chamber sidewall 200. The heat is lost, improving the efficiency with which the heating unit 500 heats the tray 100.

As an alternative embodiment, the side surface of the member 700 facing the tray 100-side has a reflectivity to light that is not less than the reflectivity of the chamber sidewall 200 to light, such that the side surface can be from the edge of the tray 100. The light at the place is reflected back to the tray 101, which further improves the utilization of light at the edge of the tray 101 and the heating efficiency of the tray 101, improving the uniformity of the temperature field at the edge of the tray 101.

In a preferred embodiment of the present invention, by selecting the material and roughness of the side surface, the reflectance of the side surface to the light should be not less than the reflectance of the edge of the tray 100 to the light, so that the side surface Light from the edge of the tray 100 can be reflected back The tray 100 further improves the utilization of light at the edges of the tray 100 and the heating efficiency of the heating unit 500 to the tray 101, improving the uniformity of the temperature field at the edge of the tray 100.

In this embodiment, the roughness of the side surface does not exceed 008 meters, so that the side surface forms a mirror surface, and the reflection of the light is specular reflection.

As an alternative embodiment, the member 700 is made of graphite or quartz. A heat-resistant reflective layer (not shown) is further disposed on a side surface of the member 700 facing the tray 101, the heat-resistant reflective layer protects graphite or quartz, and the heat-resistant reflective layer remains stable during the deposition process. On the one hand, the heat-resistant reflective layer does not fall off from the graphite or quartz of the member 700, and on the other hand, the heat-resistant reflective layer does not react with the gas in the reaction chamber. In this embodiment, the material of the heat resistant reflective layer is silicon carbide. Of course, in other embodiments, the member 700 can also be fabricated using silicon carbide regardless of manufacturing cost and processing difficulty.

With continued reference to FIG. 2, as an alternative embodiment, the thickness of the member 700 in the direction from the upper surface 101 to the lower surface 102 of the tray 100 is gradually reduced, as shown in FIG. 2, along the upper surface 101 to the lower surface. In the direction of 102, the thickness of member 700 is gradually reduced from T1 to T2. The thickness of the member 700 along the upper surface 101 to the lower surface 102 is reduced, so that the member 700 can compensate for the problem that the temperature of the lower surface 102 of the tray 100 to the upper surface 101 of the tray 100 gradually decreases to the temperature unevenness caused to the edge of the tray 100, and The effect of heat insulation, shielding and heat retention between the tray and the side walls of the chamber is well achieved, thereby improving the uniformity of the temperature field of the edge of the tray 100 and the upper surface 101 of the entire tray 100.

Referring to Figure 3 below, Figure 3 is a schematic cross-sectional view of Figure 2 along the ΑΑ. The member 700 surrounds the tray 100-week, and the chamber sidewall 200 surrounds the member 700 for one week. In this embodiment, the member 700 is a toroidal body, so that the heat insulation and heat insulation effect on the edge of the tray 100 and the airflow effect on the airflow at the edge of the tray 100 are better, so that the edge of the tray 100 can be further improved. Airflow field, temperature field and concentration field.

4 is a schematic structural view of a reaction chamber according to a second embodiment of the present invention. The same structures as those of the first embodiment are denoted by the same reference numerals. This embodiment is substantially the same as the previous embodiment except that the member 700 is fixed to the chamber side wall 200, and The member 700 is provided with a heat insulating structure 710, so that the member 700 can better isolate the chamber sidewall 200 from the edge of the tray 100, reduce the heat loss from the edge of the tray 100 to the chamber sidewall 200, and further improve the tray. The uniformity of the temperature field, airflow field and concentration field at the edge of 100. The heat insulating structure 710 may be a torus provided in the annular body of the member 700.

As an embodiment of the present invention, the heat insulating structure 710 is a heat insulating block, and the heat insulating block 710 has a thermal conductivity lower than that of the member 710. As still another embodiment of the present invention, the heat insulating structure 710 may further be composed of an insulating gas containing layer and a heat insulating gas, the heat insulating gas containing layer being embedded in the member, the heat insulating gas containing layer being A space is defined in the member for accommodating the heat insulating gas, and the heat insulating coefficient of the heat insulating gas is lower than a thermal conductivity of the member.

Referring next to Figure 5, Figure 5 is a schematic illustration of the construction of a reaction chamber in accordance with a third embodiment of the present invention. The same structures as those of the third embodiment are denoted by the same reference numerals. This embodiment is basically the same as the second embodiment, except that the side surface of the heat insulating structure 710 in the member 700 facing the side of the tray 100 is inwardly concave, which further optimizes the edge of the tray 100. The uniformity of the airflow field, concentration field and temperature field.

Referring next to Fig. 6, Fig. 6 is a schematic view showing the structure of a reaction chamber according to a fourth embodiment of the present invention. The same structures as those of the first embodiment are denoted by the same reference numerals. The present embodiment differs from the first embodiment in that the member 700 is fixed to the chamber top cover 400, and the member 700 is located between the tray 100 and the chamber side wall 200, that is, the member 700 and the chamber side wall 200 and the tray. There is a gap between the 100, and an exhaust passage is formed between the member 700 and the tray 100. The super-facing chamber side wall 200 of the member 700 has a convex curved surface.

Next, a schematic diagram of the structure of the tray of the fifth embodiment of the present invention shown in FIG. 7 will be described. The same structures as those of the first embodiment are denoted by the same reference numerals. The present embodiment differs from the first embodiment in that the member 700 is supported on the edge of the tray 100 by a special support structure (not shown). The surface of the member 700 facing the chamber top cover 400 is flush with the upper surface 101 of the tray 100, such that the member 700 and the chamber sidewall 200 and the member 700 and the tray 100 respectively form an exhaust gas. aisle. The side surface of the member 700 facing the side wall 200 side of the chamber does not exceed the level of the upper surface 101 of the tray 100. This helps to improve the uniformity of the gas field at the edge of the tray 100.

The side surface of the member 700 facing the tray 100 is an inward curved surface, and the side surface of the member 700 facing the side wall of the chamber is a convex curved surface. The coupling member 700 is between the chamber sidewall 200 and the tray 100 by adjusting the curvature of the side surface of the member 700 facing the chamber sidewall 200, the radius, and the curvature, radius of the side surface of the member 700 facing the chamber sidewall 200. The position, the airflow field, the concentration field and the temperature field at the edge of the tray 101 are adjusted and optimized. In this embodiment, the thickness of the member 700 gradually decreases along the direction from the upper surface 101 to the lower surface 102 of the tray 100 to compensate for the gradual decrease in the temperature of the edge of the tray 100 from the lower surface 102 to the upper surface 101. The edge of the upper surface 101 of 100 is better insulated.

In this embodiment, the surface of the member 700 remote from the chamber top cover 400 is located above the plane of the lower surface 102 of the tray 100. In other embodiments, the surface of the member 700 that is away from the chamber top cover 400 can also extend below the plane of the lower surface 102.

Referring next to the structural diagram of the reaction chamber of the sixth embodiment of the present invention shown in Fig. 8. The same structures as those of the first embodiment are denoted by the same reference numerals. The difference between this embodiment and the first embodiment is that the member 700 is connected to the chamber top cover 400, and the member 700 has a gap with the chamber side wall 200, and the member 700 faces the side wall 200 side of the chamber. The side surface is parallel to the chamber side wall 200, and the side surface of the member 700 facing the tray 100 side is a flat surface. The thickness of the member 700 in the direction from the upper surface 101 to the lower surface 102 of the tray 100 is gradually reduced, and by adjusting the thickness of the member 700 to be reduced, it is possible to achieve a better member 700 to the upper surface 101 to the lower surface 102 of the tray 100. The compensation of the temperature change achieves isolation between the edge of the tray 100 and the chamber sidewall 200, further improving the uniformity of the temperature field, airflow field and concentration field at the edge of the tray.

Please refer to FIG. 9, which is a top plan view of a member 700 according to a first embodiment of the present invention. Member 700 is annular and a tray (not shown) is placed within the annulus of member 700. The member 700 includes a plurality of sub-members that are connected. Each sub-component may be the same size or different. In this embodiment, the member 700 includes four sub-members 701 of the same size.

Please refer to FIG. 10, which is a schematic structural diagram of a member 700 according to a second embodiment of the present invention. Figure. The member 700 includes a plurality of sub-members 701. The sub-members 701 have a space therebetween, and the sub-members 701 are independent of each other.

In summary, the reaction chamber provided by the embodiment of the present invention has a member at the edge of the tray, and the member improves the uniformity of the airflow field, the temperature field or the concentration field at the edge of the tray; further optimized, the member is used for the tray The heat insulation between the side wall of the chamber effectively reduces the loss of heat from the edge of the tray to the side wall of the chamber, improves the efficiency of heating the tray, and the thickness of the member along the upper surface of the tray to the lower surface of the tray Gradually reducing, compensating for the problem of uneven temperature of the edge of the tray caused by the gradual decrease of the temperature of the lower surface of the tray to the upper surface of the tray, better shielding, shielding and heat insulation between the tray and the side wall of the chamber The effect, thereby improving the uniformity of the temperature field of the edge of the tray and the upper surface of the entire tray; further optimally, the member may also form an exhaust passage with the tray, the member facing the side surface of the tray side It can be a smooth transition including the inner arc surface, so that the reacted gas flows smoothly from the upper surface of the tray to the edge of the tray. The gas retention phenomenon at the place is reduced or eliminated, so that the airflow field at the edge of the tray is more evenly hooked, because the temperature field and the airflow field also affect the concentration field of the reaction gas at the edge of the tray, so that the reaction gas at the edge of the tray The uniformity of the concentration distribution is also improved, and the uniformity of the epitaxial material layer formed on the bottom of the substrate at the edge of the tray is improved;

Further preferably, the member and the tray may also constitute an exhaust passage, the member having a side surface facing one side of the tray, the side surface being a concave curved surface so as to be in the exhaust passage at the edge of the tray Forming a smooth transition that facilitates reducing or eliminating the dead space of the gas at the edge of the tray, thereby improving the uniformity of the gas field at the edge of the tray;

Or / and the tray and the member and the side wall of the chamber may also constitute an exhaust passage, the member having a side surface facing one side of the tray, the side surface being a convex curved surface so as to be at the edge of the tray A smooth transition is formed in the exhaust passage, which facilitates reducing or eliminating the dead space of the gas at the edge of the tray, thereby improving the uniformity of the gas field at the edge of the tray;

Further optimized, the side surface of the member extends above the upper surface of the tray or below the lower surface of the tray, thereby further improving the gas field, temperature field and Uniformity of the concentration field;

Further preferably, the side surface of the member facing the tray has a reflectivity to light that is not less than the reflectance of the edge of the tray to the light such that the side surface can reflect light from the edge of the tray back to the tray, further Improves the utilization of light at the edge of the tray and the heating efficiency of the tray, improving the uniformity of the temperature field at the edge of the tray;

Further preferably, the side surface of the member facing the tray side reflects specularly with light, such that a substantial portion of the light at the edge of the tray is reflected, thereby utilizing and utilizing light at the edge of the tray The heating efficiency of the tray is higher, and the uniformity of the temperature field at the edge of the tray is better;

Further optimized, the member is formed with a heat insulating structure, so that the member can better isolate the side wall of the chamber from the edge of the tray, reduce heat loss from the edge of the tray to the side wall of the chamber, and further increase the edge of the tray. The uniformity of the temperature field, airflow field and concentration field. Although the invention has been disclosed above in the preferred embodiments, the invention is not limited thereto. Any A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope defined by the claims.

Claims

Rights request

A reaction chamber for a vapor deposition process, comprising: a tray having an upper surface for placing a substrate; a chamber sidewall surrounding the tray; and characterized by: further comprising: a member, at least a portion Surrounding the edge of the tray, the member is used to improve the uniformity of the airflow field, temperature field or concentration field at the edge of the tray.

2. The reaction chamber according to claim 1, wherein the tray has a lower surface opposite to the upper surface, and a thickness of the member in a direction toward the lower surface of the upper surface gradually decreases.

3. The reaction chamber according to claim 2, wherein an exhaust passage is formed between the member and the tray, the member has a side surface facing one side of the tray, and a side surface of the member For a smooth transition.

4. The reaction chamber according to claim 3, wherein the side surface of the member is an inner orphan.

5. The reaction chamber according to claim 1, wherein an exhaust passage is formed between the member and the tray, the member has a side surface facing one side of the tray, and the side surface is an inner arc surface.

6. The reaction chamber of claim 5, wherein the side surface extends above a plane in which the upper surface lies.

7. The reaction chamber of claim 5, wherein the tray has a lower surface opposite the upper surface, the side surface extending below the plane of the lower surface.

8. The reaction chamber of claim 5, wherein the edge of the upper surface of the tray and the side of the tray are arcuately transitioned.

9. The reaction chamber according to claim 1, wherein the member has a side surface facing one side of the tray, and a side surface of the member has a reflectance to light of not less than a reflection of light from a side wall of the chamber. rate.

The surface of the member is not more than 008 μm so that the side surface of the member forms a mirror surface, The reflection of light is specular.

The reaction chamber according to claim 9, wherein the side surface of the member has a heat-resistant reflective layer, and the heat-resistant reflective layer maintains a stable state during the vapor deposition process.

The reaction chamber according to claim 1, wherein the member has a ring shape in a section parallel to a direction of an upper surface of the tray.

The reaction chamber according to claim 12, wherein the member is composed of two or more sub-members connected to each other.

14. The reaction chamber of claim 12, wherein the member is embedded with a heat insulating structure for reducing heat loss from the edge of the tray to the side wall of the chamber.

15. The reaction chamber according to claim 14, wherein a side surface of the heat insulating structure facing one side of the tray is an inward arc.

16. The reaction chamber according to claim 15, wherein the heat insulating structure comprises an insulating gas containing layer and a heat insulating gas, the heat insulating gas containing layer being embedded in the member, the heat insulating The gas accommodating layer defines a space in the member for accommodating the heat insulating gas, and the heat insulating coefficient of the heat insulating gas is lower than a thermal conductivity of the member.

17. The reaction chamber of claim 16, wherein the thermal insulation structure is a thermal insulation block embedded in the member, the thermal insulation block having a thermal conductivity lower than a thermal conductivity of the member.

18. The reaction chamber of claim 1 further comprising: a chamber cover above the upper surface of the tray, one end of the member being secured to the chamber top cover.

19. The reaction chamber of claim 1 wherein the member is secured to the sidewall of the chamber.

20. The reaction chamber of claim 1 wherein there is a gap between the member and the sidewall of the chamber.