CN106480424A - A kind of temperature field compensation device being applied to HFCVD equipment - Google Patents
A kind of temperature field compensation device being applied to HFCVD equipment Download PDFInfo
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- CN106480424A CN106480424A CN201610860140.5A CN201610860140A CN106480424A CN 106480424 A CN106480424 A CN 106480424A CN 201610860140 A CN201610860140 A CN 201610860140A CN 106480424 A CN106480424 A CN 106480424A
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- temperature field
- workbench
- compensation device
- substrate
- field compensation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
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- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of temperature field compensation device being applied to HFCVD equipment, HFCVD equipment includes airtight reative cell, workbench (9), substrate (5), sample (6) and heated filament (4), it is indoor that workbench (9) is arranged on reaction, in workbench (9) the described substrate of upper placement (5), heated filament (4) is arranged on workbench (9), and it is suspended from above substrate (5), recirculated cooling water (7) is also led in workbench (9), it is additionally provided with the air inlet being passed through for reacting gas above reative cell, temperature field compensation device includes being arranged on the upper polylith heat reflection plate (2) of workbench (9), reflecting plate (2) is connected with each other integral, and form the reflection cap around substrate (5), also have the port for reacting gas turnover on the top of reflection cap.Compared with prior art, the present invention preferable can must lift HFCVD device substrate Uniformity of Temperature Field, and the quality of diamond thin is prepared in lifting, energy saving, simultaneously structure simple it is easy to processing etc..
Description
Technical field
The present invention relates to the coating making apparatus technical field such as diamond thin, especially relate to one kind and be applied to HFCVD
The temperature field compensation device of equipment.
Background technology
With developing rapidly of the fields such as automobile, Aero-Space, micromachined, some intensity are high, wearability is good, heat is swollen
The little new material of swollen coefficient such as reinforced aluminum matrix composites, carbon fibre reinforcement, new ceramic material have obtained widely
Application.Hot filament CVD is widely used in diamond membrane with large area because its equipment operation is simple, with low cost
In industrialization production.The quality that HFCVD method prepares diamond film is easily affected by many technological factors.Wherein, reative cell
The Temperature Distribution of thermo parameters method, especially substrate surface directly affects growth rate and the quality of forming film of diamond thin.And
Underlayer temperature is mainly derived from the radiation heat transfer of heated filament.General at present cold with regulation substrate circulation using the temperature adjusting heated filament
But discharge is realizing the control of substrate surface temperature.Substantial amounts of experimental study shows, substrate temperature field is impact HF CVD
The factor of deposition of diamond coatings most critical.During hot filament deposit's diamond thin, uniform and suitable temperature field, is system
Standby surfacing, the essential condition of the good High Quality Diamond Film of film substrate bond strength.
In recent years, Chinese scholars have rapid progress for the research in HFCVD temperature field.However, being directed to HFCVD temperature
The research of field focuses mostly in the analog simulation in temperature field, in the hope of being closer to practically obtain the distribution in HF CVD temperature field.But
Still fail the improvement project in system substrate temperature field is proposed from device, uneven to solve the problems, such as underlayer temperature field.
Content of the invention
The purpose of the present invention is exactly to overcome the defect of above-mentioned prior art presence to provide one kind to be applied to HFCVD and set
Standby temperature field compensation device.
The purpose of the present invention can be achieved through the following technical solutions：
A kind of temperature field compensation device being applied to HFCVD equipment, described HFCVD equipment includes airtight reative cell,
Workbench, substrate, sample and heated filament, described workbench is arranged on reaction interior, places described substrate on the table, described
Heated filament arrange on the table, and be suspended from above substrate, in described workbench, also lead to recirculated cooling water, described reative cell
Top is additionally provided with the air inlet being passed through for reacting gas, and described temperature field compensation device includes setting polylith heat on the table
Reflecting plate, described reflecting plate is connected with each other integral, and forms the reflection cap around substrate, also has on the top of reflection cap
Port for reacting gas turnover.
Preferably, the vertical section of described reflecting plate is divided into two parts, and wherein, lower vertical is arranged, and top is curved.
It is furthermore preferred that the angle of the central angle corresponding to arc top of the vertical section of reflecting plate is 120 °.Can also
It is adjusted according to concrete device.
Preferably, described reflecting plate is double layer design, and wherein, internal layer is heat-resisting steels layer, and outer layer is ceramic material layer.
This structure makes it have the property that：Can must avoid scattering and disappearing of heat compared with limits, and heated filament radiation reflective is returned substrate
Surface.
It is furthermore preferred that the inner surface of described heat-resisting steel material also sanding and polishing is to minute surface.
Preferably, there also is provided drain even gas disk at the air inlet of reative cell.So can effectively make up reflecting plate to introduce
Impact to gas flowfield, and control gas flow rate.
Preferably, described workbench there also is provided support bar in the surrounding of substrate, and the bottom of described reflecting plate is provided with
The installing hole being mated with support bar, is inserted using support bar and installs in the hole so that reflecting plate is fixing on the table.
Preferably, described reflecting plate is provided with four pieces.Test observation is not affected after being mainly to ensure that installation.
Compared with prior art, the present invention has advantages below：
1：The present invention preferable can must lift HFCVD device substrate Uniformity of Temperature Field, and the matter of diamond thin is prepared in lifting
Amount, energy saving；
2：The present invention can be suitably used for general HFCVD equipment, only original equipment need to be transformed slightly, the scope of utilization is wide
General；
3：Present configuration simple it is easy to processing, with low cost it is adaptable to be widely popularized.
Brief description
Fig. 1 is the structural representation of the temperature field compensation device of the present invention；
Fig. 2 is the principle schematic of the temperature field compensation device of the present invention；
Fig. 3 is the structural representation of the HFCVD equipment of the present invention；
Fig. 4 is the heated filament-underlayer temperature field pattern of existing HFCVD equipment；
Fig. 5 is the heated filament-underlayer temperature field pattern of the HFCVD equipment of the temperature field compensation device with the present invention；
In figure, 1- drain even gas disk, 2- reflecting plate, 3- support bar, 4- heated filament, 5- substrate, 6- sample, 7- circulating cooling
Water, 8- observation window, 9- workbench.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
HFCVD equipment is as shown in figure 3, include airtight reative cell, workbench 9, substrate 5, sample 6 and heated filament 4, workbench
9 are arranged on reaction interior, place substrate 5, heated filament 4 is arranged on workbench 9, and is suspended from above substrate 5, work on workbench 9
Also lead to recirculated cooling water 7 in station 9, above reative cell, be additionally provided with the air inlet being passed through for reacting gas, on the wall of reative cell side also
It is provided with observation window 8.It is applied to the temperature field compensation device of above-mentioned HFCVD equipment, its structure is as shown in figure 1, include being arranged on work
Four pieces of heat reflection plates 2 in station 9, reflecting plate 2 is connected with each other integral, and forms the reflection cap around substrate 5, in reflection cap
Top also has the port for reacting gas turnover.The vertical section of reflecting plate 2 is divided into two parts, and wherein, lower vertical is arranged,
Top is curved.The angle of the central angle corresponding to arc top of the vertical section of reflecting plate 2 is 120 °.Reflecting plate 2 is double
Layer design, wherein, internal layer is heat-resisting steels layer, and outer layer is ceramic material layer.This structure makes it have the property that：Can be relatively
Limits must avoid scattering and disappearing of heat, and heated filament 4 radiation reflective is gone back to substrate 5 surface.The inner surface of heat-resisting steel material is also polished
It is polished to minute surface.Drain even gas disk 1 is there also is provided at the air inlet of reative cell.So can effectively make up reflecting plate 2 introduce right
The impact of gas flowfield, and control gas flow rate.Workbench 9 there also is provided support bar 3, the bottom of reflecting plate 2 in the surrounding of substrate 5
Portion is provided with the installing hole mating with support bar 3, is inserted using support bar 3 and installs in the hole so that reflecting plate 2 is fixed on workbench 9
On.
During using above-mentioned temperature field compensation device being added in HFCVD equipment, its temperature compensation principle such as Fig. 2.With
When, using Fluent software, analogue simulation analysis is carried out to the present invention.Fig. 4 is the heated filament-underlayer temperature field distribution of existing apparatus
Schematic diagram, Fig. 5 is the improved model heated filament-underlayer temperature field distribution schematic diagram with temperature field compensation device.Substrate 5 in Fig. 4
Surface temperature interval is about between 970-1060K, and can be seen that about 1050- interval in substrate 5 surface temperature in Fig. 5
1080K.Found by contrast, improve device and the thermograde of heated filament 4- substrate 5 is become apparent from, temperature fluctuation is from script
9.3% narrows down to 3% about, and substrate 5 thermo parameters method is more uniformly distributed.
The above-mentioned description to embodiment is to be understood that and use invention for ease of those skilled in the art.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiment without through performing creative labour.Therefore, the invention is not restricted to above-described embodiment, ability
, according to the announcement of the present invention, the improvement made without departing from scope and modification all should be the present invention's for field technique personnel
Within protection domain.
Claims (8)
1. a kind of temperature field compensation device being applied to HFCVD equipment, described HFCVD equipment includes airtight reative cell, work
Station (9), substrate (5), sample (6) and heated filament (4), it is indoor, on workbench (9) that described workbench (9) is arranged on reaction
Place described substrate (5), described heated filament (4) is arranged on workbench (9), and is suspended from above substrate (5), described workbench
(9) also lead to recirculated cooling water (7) in, be additionally provided with, above described reative cell, the air inlet being passed through for reacting gas, its feature exists
Include being arranged on the upper polylith heat reflection plate (2) of workbench (9) in, described temperature field compensation device, described reflecting plate (2) phase
Connect integral, and form the reflection cap around substrate (5), also have on the top of reflection cap logical for reacting gas turnover
Mouthful.
2. a kind of temperature field compensation device being applied to HFCVD equipment according to claim 1 is it is characterised in that described
The vertical section of reflecting plate (2) be divided into two parts, wherein, lower vertical is arranged, and top is curved.
3. a kind of temperature field compensation device being applied to HFCVD equipment according to claim 2 is it is characterised in that reflect
The angle of the central angle corresponding to arc top of the vertical section of plate (2) is 120 °.
4. a kind of temperature field compensation device being applied to HFCVD equipment according to claim 1 is it is characterised in that described
Reflecting plate (2) be double layer design, wherein, internal layer be heat-resisting steels layer, outer layer be ceramic material layer.
5. a kind of temperature field compensation device being applied to HFCVD equipment according to claim 4 is it is characterised in that described
Heat-resisting steel material inner surface also sanding and polishing to minute surface.
6. a kind of temperature field compensation device being applied to HFCVD equipment according to claim 1 is it is characterised in that anti-
Answer and at the air inlet of room, there also is provided drain even gas disk (1).
7. a kind of temperature field compensation device being applied to HFCVD equipment according to claim 1 is it is characterised in that described
Workbench (9) there also is provided support bar (3) in the surrounding of substrate (5), the bottom of described reflecting plate (2) is provided with and support bar
(3) installing hole mating, is inserted using support bar (3) and installs in the hole so that reflecting plate (2) is fixed on workbench (9).
8. a kind of temperature field compensation device being applied to HFCVD equipment according to claim 1 is it is characterised in that described
Reflecting plate (2) be provided with four pieces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610860140.5A CN106480424A (en) | 2016-09-28 | 2016-09-28 | A kind of temperature field compensation device being applied to HFCVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610860140.5A CN106480424A (en) | 2016-09-28 | 2016-09-28 | A kind of temperature field compensation device being applied to HFCVD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106480424A true CN106480424A (en) | 2017-03-08 |
Family
ID=58268185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610860140.5A Pending CN106480424A (en) | 2016-09-28 | 2016-09-28 | A kind of temperature field compensation device being applied to HFCVD equipment |
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| CN (1) | CN106480424A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115261822A (en) * | 2022-08-11 | 2022-11-01 | 江苏微导纳米科技股份有限公司 | Furnace tube coating equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62131523A (en) * | 1985-12-03 | 1987-06-13 | Hitachi Electronics Eng Co Ltd | Cvd thin film forming device |
| WO1991014798A1 (en) * | 1990-03-20 | 1991-10-03 | Diamonex, Incorporated | An improved hot filament chemical vapor deposition reactor |
| CN1603464A (en) * | 2004-10-28 | 2005-04-06 | 上海交通大学 | Auxiliary grid hot wire chemical vapor deposition process for preparing nano-diamond thin film |
| JP2008053489A (en) * | 2006-08-25 | 2008-03-06 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| CN103074595A (en) * | 2012-09-07 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Reaction chamber for vapor deposition process |
-
2016
- 2016-09-28 CN CN201610860140.5A patent/CN106480424A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62131523A (en) * | 1985-12-03 | 1987-06-13 | Hitachi Electronics Eng Co Ltd | Cvd thin film forming device |
| WO1991014798A1 (en) * | 1990-03-20 | 1991-10-03 | Diamonex, Incorporated | An improved hot filament chemical vapor deposition reactor |
| CN1603464A (en) * | 2004-10-28 | 2005-04-06 | 上海交通大学 | Auxiliary grid hot wire chemical vapor deposition process for preparing nano-diamond thin film |
| JP2008053489A (en) * | 2006-08-25 | 2008-03-06 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| CN103074595A (en) * | 2012-09-07 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Reaction chamber for vapor deposition process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115261822A (en) * | 2022-08-11 | 2022-11-01 | 江苏微导纳米科技股份有限公司 | Furnace tube coating equipment |
| CN115261822B (en) * | 2022-08-11 | 2023-10-13 | 江苏微导纳米科技股份有限公司 | Furnace tube film plating equipment |
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Application publication date: 20170308 |
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| RJ01 | Rejection of invention patent application after publication |