WO2014032874A1 - Détecteur de rayonnement et son procédé de production - Google Patents

Détecteur de rayonnement et son procédé de production Download PDF

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Publication number
WO2014032874A1
WO2014032874A1 PCT/EP2013/065719 EP2013065719W WO2014032874A1 WO 2014032874 A1 WO2014032874 A1 WO 2014032874A1 EP 2013065719 W EP2013065719 W EP 2013065719W WO 2014032874 A1 WO2014032874 A1 WO 2014032874A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
absorption layer
filler
radiation
radiation detector
Prior art date
Application number
PCT/EP2013/065719
Other languages
German (de)
English (en)
Inventor
Francesco ARCA
Günter Schmid
Oliver Schmidt
Sandro Francesco Tedde
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2014032874A1 publication Critical patent/WO2014032874A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un détecteur de rayonnement comportant une photodiode hybride organique servant à la détection de rayons X. Afin d'obtenir une répartition des porteurs de charge la plus équilibrée possible à l'intérieur de l'ensemble de la couche d'absorption, la charge inorganique varie à l'intérieur de la couche d'absorption organique. On obtient ainsi un taux d'absorption pratiquement identique sur toute l'épaisseur de la couche d'absorption.
PCT/EP2013/065719 2012-09-03 2013-07-25 Détecteur de rayonnement et son procédé de production WO2014032874A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012215564.3 2012-09-03
DE102012215564.3A DE102012215564A1 (de) 2012-09-03 2012-09-03 Strahlungsdetektor und Verfahren zur Herstellung eines Strahlungsdetektors

Publications (1)

Publication Number Publication Date
WO2014032874A1 true WO2014032874A1 (fr) 2014-03-06

Family

ID=48916018

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/065719 WO2014032874A1 (fr) 2012-09-03 2013-07-25 Détecteur de rayonnement et son procédé de production

Country Status (2)

Country Link
DE (1) DE102012215564A1 (fr)
WO (1) WO2014032874A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017005532A1 (fr) 2015-07-09 2017-01-12 Koninklijke Philips N.V. Détecteur de rayonnement à conversion directe
KR101873650B1 (ko) 2015-10-23 2018-07-02 지멘스 헬스케어 게엠베하 광 바이어스를 갖는 x선 검출기 및/또는 감마 검출기
JP2018157054A (ja) * 2017-03-17 2018-10-04 株式会社東芝 光検出素子、および光検出器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014205868A1 (de) 2014-03-28 2015-10-01 Siemens Aktiengesellschaft Material für Nanoszintillator sowie Herstellungsverfahren dazu

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10313602A1 (de) * 2003-03-26 2004-10-21 Siemens Ag Vorrichtung zur Messung einer Strahlungsdosis
US20050126628A1 (en) * 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US20070132052A1 (en) * 2005-01-07 2007-06-14 Edward Sargent Electronic and optoelectronic devices with quantum dot films
US20070151597A1 (en) * 2005-12-30 2007-07-05 Industrial Technology Research Institute Nanocrystal and photovoltaic device comprising the same
US20080237470A1 (en) * 2007-03-26 2008-10-02 General Electric Company Polymeric composite scintillators and method for making same
US20090165861A1 (en) * 2007-12-27 2009-07-02 Hitachi, Ltd Organic Thin Film Solar Cell and Fabrication method of Same
US20090179155A1 (en) * 2008-01-14 2009-07-16 Irving Weinberg Radiation Detector Assembly, Radiation Detector, and Method for Radiation Detection
US20100051092A1 (en) * 2008-08-27 2010-03-04 Honeywell International Inc. Solar cell having hybrid heterojunction structure and related system and method
US20100294351A1 (en) * 2009-05-19 2010-11-25 Regents Of The University Of Minnesota Graded Organic Photovoltaic Device
DE102008029782A1 (de) 2008-06-25 2012-03-01 Siemens Aktiengesellschaft Photodetektor und Verfahren zur Herstellung dazu
WO2012050543A1 (fr) * 2010-10-12 2012-04-19 Boris Gilman Procédé de formation d'un matériau nanostructuré flexible pour panneaux photovoltaïques et appareil servant à réaliser le procédé

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849798B2 (en) * 2002-12-17 2005-02-01 General Electric Company Photovoltaic cell using stable Cu2O nanocrystals and conductive polymers
JP2009516915A (ja) * 2005-11-21 2009-04-23 ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド 別個の材料が相互に貫通し合う網目構造の形成方法およびそのデバイス
US8431041B2 (en) * 2008-03-31 2013-04-30 Stc.Unm Halide-based scintillator nanomaterial
EP2649653B1 (fr) * 2010-12-09 2021-05-05 Faculdade De Ciências E Tecnologia Da Universidade Nova de Lisboa Dispositifs optoélectroniques mésoscopiques comprenant des réseaux de piliers semi-conducteurs déposés à partir d'une suspension, et leur procédé de fabrication

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050126628A1 (en) * 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
DE10313602A1 (de) * 2003-03-26 2004-10-21 Siemens Ag Vorrichtung zur Messung einer Strahlungsdosis
US20070132052A1 (en) * 2005-01-07 2007-06-14 Edward Sargent Electronic and optoelectronic devices with quantum dot films
US20070151597A1 (en) * 2005-12-30 2007-07-05 Industrial Technology Research Institute Nanocrystal and photovoltaic device comprising the same
US20080237470A1 (en) * 2007-03-26 2008-10-02 General Electric Company Polymeric composite scintillators and method for making same
US20090165861A1 (en) * 2007-12-27 2009-07-02 Hitachi, Ltd Organic Thin Film Solar Cell and Fabrication method of Same
US20090179155A1 (en) * 2008-01-14 2009-07-16 Irving Weinberg Radiation Detector Assembly, Radiation Detector, and Method for Radiation Detection
DE102008029782A1 (de) 2008-06-25 2012-03-01 Siemens Aktiengesellschaft Photodetektor und Verfahren zur Herstellung dazu
US20100051092A1 (en) * 2008-08-27 2010-03-04 Honeywell International Inc. Solar cell having hybrid heterojunction structure and related system and method
US20100294351A1 (en) * 2009-05-19 2010-11-25 Regents Of The University Of Minnesota Graded Organic Photovoltaic Device
WO2012050543A1 (fr) * 2010-10-12 2012-04-19 Boris Gilman Procédé de formation d'un matériau nanostructuré flexible pour panneaux photovoltaïques et appareil servant à réaliser le procédé

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
QI DIFEI ET AL: "Efficient polymer-nanocrystal quantum-dot photodetectors", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 86, no. 9, 23 February 2005 (2005-02-23), pages 93103 - 093103, XP012066545, ISSN: 0003-6951, DOI: 10.1063/1.1872216 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017005532A1 (fr) 2015-07-09 2017-01-12 Koninklijke Philips N.V. Détecteur de rayonnement à conversion directe
JP2017538916A (ja) * 2015-07-09 2017-12-28 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 直接変換放射線検出器
US9958556B1 (en) 2015-07-09 2018-05-01 Koninklijke Philips N.V. Direct conversion radiation detector
RU2712934C2 (ru) * 2015-07-09 2020-02-03 Конинклейке Филипс Н.В. Детектор излучения прямого преобразования
KR101873650B1 (ko) 2015-10-23 2018-07-02 지멘스 헬스케어 게엠베하 광 바이어스를 갖는 x선 검출기 및/또는 감마 검출기
JP2018157054A (ja) * 2017-03-17 2018-10-04 株式会社東芝 光検出素子、および光検出器

Also Published As

Publication number Publication date
DE102012215564A1 (de) 2014-03-06

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