WO2008104173A2 - Cellule solaire organique - Google Patents

Cellule solaire organique Download PDF

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Publication number
WO2008104173A2
WO2008104173A2 PCT/DE2008/000373 DE2008000373W WO2008104173A2 WO 2008104173 A2 WO2008104173 A2 WO 2008104173A2 DE 2008000373 W DE2008000373 W DE 2008000373W WO 2008104173 A2 WO2008104173 A2 WO 2008104173A2
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WO
WIPO (PCT)
Prior art keywords
layer
electron
solar cell
organic solar
cell according
Prior art date
Application number
PCT/DE2008/000373
Other languages
German (de)
English (en)
Other versions
WO2008104173A3 (fr
Inventor
Marin Rusu
Martha Christina Lux-Steiner
Original Assignee
Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh filed Critical Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh
Priority to EP08734347A priority Critical patent/EP2132799A2/fr
Publication of WO2008104173A2 publication Critical patent/WO2008104173A2/fr
Publication of WO2008104173A3 publication Critical patent/WO2008104173A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to an organic solar cell comprising two electrodes and arranged between them at least one at least two partial layers having photoactive layer, of which at least one sublayer emits electrons (donor) and at least one other sublayer accommodates electrons (acceptor), wherein between each electrode and the photoactive layer is an intermediate layer.
  • Such a solar cell is for example in Appl. Phys. Lett., Vol. 79, no. 1, 2nd June 2001, 126-128.
  • the solar cell described there is based on a CuPc donor sublayer and a C 6 O acceptor sublayer for the photoactive layer.
  • a PEDOT: PSS buffer layer is interposed between the ITO (anode) layer and the CuPc sublayer to better match the Fermi level of the ITO layer to the HOMO level of the CuPc layer.
  • the BCP buffer layer ensures the transport of the electrons from the C 60 layer to the Al cathode and blocks the transport of the excitons to the cathode, thereby preventing recombination.
  • DE 10326 546 A1 describes an organic solar cell with increased parallel resistance, which is based on a photoactive layer of two molecular components - an electron donor and an electron acceptor - wherein the region of the electron acceptors a cathode and the region of the electron donors an anode is associated. Between at least one of the electrodes and the photoactive layer is disposed an intermediate layer of asymmetric conductivity whose bandgap is greater than or equal to the bandgap of the photoactive layer.
  • the conduction band of the high electron mobility layer disposed between the active layer and the negative electrode is the highest occupied molecular orbital (HOMO) of the electron acceptor and the valence band of the high hole mobility layer located between active layer and positive electrode is the lowest unoccupied molecular orbital (LUMO ) of the electron donor is adjusted.
  • HOMO highest occupied molecular orbital
  • LUMO lowest unoccupied molecular orbital
  • the material of the light incident electrode is given, for example, Al, Cu, ITO. This electrode should preferably be transparent or semitransparent and / or have a lattice structure.
  • the object of the invention is therefore to provide a further arrangement for an organic solar cell, with which a higher efficiency and better stability than with previously known solar cell arrangements to be achieved.
  • the cathode facing the light incidence is designed as a transparent window in a multilayer arrangement
  • the photoactive layer is in the form of a homo or heterostructure between the cathode and the anode in such a way that the charge carriers are separated at two interfaces
  • ⁇ is the minimum of the conduction band of the transparent cathode to the interface with the photoactive layer such receiving between the HOMO and the LUMO level of the electron sublayer, ie HOMOAkz CBM ⁇ ⁇ a ⁇ th LUMOAKZ that the difference of the energy
  • Interface cathode and electron-receiving sub-layer is equal to or higher than the minimum of the conduction band of the cathode, ie CBM Ka t h ⁇ CBM PU ffi, and simultaneously
  • ⁇ the minimum of the conduction band of the buffer layer is not higher than the LUMO level of the electron-accepting sublayer, ie
  • the minimum of the conduction band of the buffer layer is higher than the LUMO level of the electron-accepting sublayer, ie LUMO Ak z ⁇ CBMp uff1 ,
  • the material of the anode (An) no or such a low barrier to the second buffer layer (Puff2) of doped material of the second sub-layer (l_ Do n) of the photoactive layer forms that the positive charge carriers, the interface of the second buffer layer (Puff2) to the anode (An) happen without losses.
  • the arrangement according to the invention allows effective separation of the charge carriers and their transport to the electrodes, as will be explained below.
  • the dissociation of the excitons takes place when light incidence in the inventive arrangement not only at an interface - as already known from the prior art - but at both interfaces of the electron-receiving sub-layer of the photoactive layer. That is, the charge carrier separation takes place both at the interface of the electron-accepting layer and the cathode and at the other interface of said sub-layer and the electron-donating sub-layer of the photoactive layer, whereby higher photocurrents can be realized.
  • the arrangement according to the invention can therefore also be referred to as a "bifacial structure" and uses the scattered light in the proposed layer sequence for efficient conversion.
  • this sub-layer can be made thicker in order to obtain the same number of charge carriers according to the prior art with an interface.
  • the material of the electron-accepting sub-layer is C- ⁇ o or CuPcFi ⁇ or ZnPcFi ⁇ and that of the electron-emitting sub-layer is CuPc or ZnPc. It has proved to be advantageous to form the electron-accepting partial layer very thinly, preferably approximately 10 nm, in order to tunnel the
  • the sub-layers can also have highly structured surfaces to further improve the efficiency of the solar cell, which is known to increase the interface / contact area of these two sub-layers.
  • the material of the electron-accepting sublayer is doped.
  • the doping is achieved by molecules or donor material, preferably the organic doping material is the material of the electron-emitting part-layer homogeneous distribution of the
  • Doping material provided in the electron-receiving sub-layer is between 3 and 10 mol. %.
  • the distribution of the doping material in the electron-accepting sublayer has a gradient such that the concentration of the donor molecules of 0% at the interface between the buffer layer formed as a further window layer and the electron-receiving sub-layer up to max , Is 100% at the interface between the electron-accepting sub-layer and the electron-donating sub-layer.
  • the concentration at the latter interface may also be less than 100%, whereby a step-shaped transition arises at this interface.
  • the thickness of the electron-accepting sub-layer doped in the manner described is between 40 nm and 70 nm.
  • the electron-receiving sub-layer is formed as a mixed layer of the material of the electron-receiving sub-layer and the material of the electron-emitting sub-layer.
  • the donor and acceptor clusters forming in the mixed layer form networks that ensure effective transport of holes and electrons.
  • the clusters may also be separated by a distance, resulting in a "hopping" or tunneling mechanism in the transport of the charge carriers.
  • Such an effective acceptor-donor layer structure ie a layer with the dimensions of the clusters necessary for effective transport, may be be prepared by co-evaporation or spin coating at low
  • the ratio of the two materials may vary to achieve effective parameters that have become the best characteristics but achieved for solar cells with a mixing ratio of the two materials of 1: 1. If the mixing ratio varies, this can also take place continuously, so that in the mixed layer the concentration of the electron-accepting sub-layer decreases from 100% on the side of the window layer to 0% on the side of the electron-emitting sub-layer and emits the concentration of the material of the electrons Partial layer changed in the mixed layer opposite.
  • the mobility of the holes can also be improved by the formation of the electron-receiving sub-layer as a strongly folded layer.
  • the material of the electron-receiving sub-layer and the material of the electron-emitting sub-layer penetrate each other. Disadvantages that arise in the above-mentioned possibility of a mixed layer as an electron-accepting sub-layer by forming a heterojunction in the volume are bypassed.
  • the donor-acceptor structure depends on the morphology of the first applied organic layer.
  • the formation of the electron-receiving sublayer (LAI ⁇ Z ) as a nanostructured layer in which the material of the electron-accepting sublayer (L Akz ) and the material of the electron-donating sublayer (LD O ⁇ ) interpenetrates leads to an improvement of the "folding concept This is due to a controlled formation of a monocrystalline organic starting layer with adjustable dimensions of the crystallites such as their height and width and their distance from each other, which dimensions should be comparable to the diffusion length of the excitons in the material used.
  • the thickness of the two-material and mutually penetrating electron-receiving sub-layer is between 30 nm and 80 nm.
  • the cathode formed as a transparent window in a multi-layer arrangement allows use of different materials, e.g. Materials that have different forbidden zones (band gaps), by means of different thicknesses, the targeted adjustment of an electric field at the cathode and thus the adjustment of the necessary for the transport of the charge carrier work function.
  • materials e.g. Materials that have different forbidden zones (band gaps)
  • the multilayer arrangement for the transparent cathode as a two-layer arrangement of ZnO: Al / i-ZnO.
  • This electrode is indium-free and cheaper to produce than ITO.
  • the organic material with a large forbidden zone of the further window layer formed as a buffer layer is Alq 3 (tris (8-hydroxyquinoline) aluminum) or CBP (4,4'-N, N'-dicarbazolyl-biphenyl).
  • this organic buffer layer Due to the electronic structure of this organic buffer layer, a better adaptation of the physical and electronic parameters of the inorganic front electrode / cathode to that of the photoactive layer, the absorber layer, is achieved.
  • the buffer layer completes the window layer of the solar cell.
  • the width of the forbidden zone of the buffer layer "cuts" off incident light having a wavelength in the UV range, since this wavelength range is responsible for the photodegradation of organic solar cells, resulting in increased stability of the cells.
  • the second buffer layer which is preferably formed of doped material of this electrode adjacent part-layer of the photoactive layer.
  • the material of the second buffer layer is CuPc: FeCl3.
  • this second buffer layer can also be formed from a material that transports holes but not electrons and excitons.
  • the anode / back electrode material has no barrier or low barrier to the second buffer layer such that the positive charge carriers pass without loss the buffer layer / anode interface.
  • the material of the back electrode / anode may be Al, Ag, Au, Ca, Mg or Ca / Al, Mg / Al, Mg / Ag.
  • an at least semitransparent anode is provided.
  • a transparent front electrode (cathode) and a semi-transparent back electrode (anode) the organic solar cell according to the invention can be irradiated from both directions (front and back) - after or at the same time.
  • the proposed solar cell effectively converts the incident light into electrical energy (indoor and outdoor lighting).
  • the solar cell according to the invention can be realized in the form of a superstrate configuration (with a transparent support, for example on glass substrate, the window layer, ie the transparent cathode, the photoactive layer and the rear contact), in which case the light is incident through the substrate, as well as a "common" substrate configuration (glass substrate / backside contact / photoactive Layer (absorber) / window layer) can be realized in an inverted structure. In the latter case, the light is incident through the window layer.
  • the material of the "usual" substrate - semitransparent or non-transparent - can also be metallic or crystalline or a polymer and also flexible.
  • the material of the superstrate is relatively freely selectable and depending on the application also a polymer or crystalline and also in turn flexible be.
  • the solar cell according to the invention can also be configured as a tandem solar cell and then has a charge carrier recombination zone between the second buffer layer of the top cell (1st cell) and the photoactive layer of the back cell (2nd cell), the recombination centers (noble metals (Au, Ag, Mg) nanoclusters) embedded in a ca.
  • a charge carrier recombination zone between the second buffer layer of the top cell (1st cell) and the photoactive layer of the back cell (2nd cell), the recombination centers (noble metals (Au, Ag, Mg) nanoclusters) embedded in a ca.
  • At least the bandgap of the electron donating sublayer should be lower so that charge carriers with a longer wavelength are absorbed compared to the same sublayer of the first photoactive layer.
  • the material for this sublayer may be ZnPc or TiOPc or other material known in the art. Since the partial layers of the solar cell according to the invention are formed very thin and not all radiation is absorbed in the first solar cell, the second solar cell is used thus the better utilization of the incident light spectrum and leads to the improvement of the efficiency.
  • the figure shows a schematic representation of the layer sequences and their electronic structure for an embodiment of the solar cell according to the invention in a superstrate configuration with a photoactive layer in heterostructure.
  • the layer sequence in the figure shows a window multilayer arrangement which is formed from a ZnO: Al layer K1 with a layer thickness of about 400 nm, an i-ZnO layer K2 with a layer thickness of about 90 nm and a first buffer layer Puffi from Alq3.
  • the width of the forbidden zone of Alq3 is 2.7 eV (n-type), this material is deposited in a thickness of about 10 nm.
  • the electron-accepting layer L- Akz - here C 6 o Adjacent to this first buffer layer Puffi, which cuts electromagnetic waves in the UV region, is the electron-accepting layer L- Akz - here C 6 o with a band gap of 1.7 eV to 2.3 eV and a thickness between 40 nm and 70 nm (n type).
  • the electron-emitting layer Lo o n is CuPc with a thickness of about 15 nm to 30 nm (p-type) and a bandgap of 1.7 eV.
  • the electron-accepting layer LAR Z can also be formed very thin, for example 10 nm.
  • Another possibility for this is the formation of the electron-accepting layer L Akz as 60 nm thick mixed layer C 6 o: CuPc, in which the C 6 o concentration of 100% on the side of the multi-layered window assembly to 0% on the side Donate electrons Layer l_ Do n falls. The CuPc concentration changes in the opposite direction.
  • a second buffer layer Puff2 of p-type CuPc: FeCl 3 is arranged in a thickness between 5 nm and 10 nm.
  • the anode An is made of Al.
  • the band matching is - as already described - realized according to the invention by the materials used so that takes place at the two boundary surfaces of the electron-accepting sub-layer L Akz the photoactive layer, a separation of the charge carriers.
  • the electrons are shown schematically with filled circles and the holes with empty circles.
  • charge carrier pairs (electron-hole pairs / excitons) are produced in the two partial layers L A , K L, L D O n of the photoactive layer.
  • the arrangement according to the invention causes the formation of electric fields in the present layer system such that these excitons migrate both to the donor / acceptor interface and to the acceptor / cathode interface, where they dissociate into electrons and holes and then transport these charge carriers to the corresponding electrodes become (represented by arrows). Since the separation of the charge carrier pairs takes place at two boundary surfaces which satisfy the energetic distances-as described-a substantially improved efficiency is achieved with this solution compared to organic solar cells which are known from the prior art.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire organique présentant deux électrodes et au moins une couche photoactive qui est disposée entre celles-ci et qui présente au moins deux couches partielles, au moins une de ces couches partielles donnant des électrons (donneuse) et une autre couche partielle acceptant des électrons (acceptrice). Une couche intermédiaire est disposée entre chacune des électrodes et la couche photoactive. Le système selon l'invention permet d'obtenir une efficacité accrue et une meilleure stabilité par rapport aux systèmes connus de cellules solaires. Dans le système selon l'invention, la cathode (Kath) faisant face à l'incidence de la lumière se présente sous la forme d'une fenêtre transparente à disposition multicouche, la couche photoactive se présente sous la forme d'une homostructure ou d'une hétérostructure disposée entre la cathode (Kath) et l'anode (An) de sorte qu'une séparation des porteurs de charge se produise à deux interfaces, la couche partielle acceptrice d'électrons (LAkz) de la couche photoactive est adjacente à la cathode (Kath) et la couche partielle donneuse d'électrons (LDon) de la couche photoactive est adjacente à l'anode (An). Les propriétés énergétiques des matières d'un tel système sont définies.
PCT/DE2008/000373 2007-03-01 2008-02-29 Cellule solaire organique WO2008104173A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08734347A EP2132799A2 (fr) 2007-03-01 2008-02-29 Cellule solaire organique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007009995A DE102007009995A1 (de) 2007-03-01 2007-03-01 Organische Solarzelle
DE102007009995.0 2007-03-01

Publications (2)

Publication Number Publication Date
WO2008104173A2 true WO2008104173A2 (fr) 2008-09-04
WO2008104173A3 WO2008104173A3 (fr) 2009-03-05

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Application Number Title Priority Date Filing Date
PCT/DE2008/000373 WO2008104173A2 (fr) 2007-03-01 2008-02-29 Cellule solaire organique

Country Status (3)

Country Link
EP (1) EP2132799A2 (fr)
DE (2) DE102007009995A1 (fr)
WO (1) WO2008104173A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007009995A1 (de) 2007-03-01 2008-09-04 Hahn-Meitner-Institut Berlin Gmbh Organische Solarzelle
US20110253206A1 (en) * 2008-10-30 2011-10-20 Idemitsu Kosan Co., Ltd. Organic solar battery
DE102009024953A1 (de) 2009-06-11 2011-02-10 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Mehrschichtelektrode für photovoltaische Bauelemente, Verfahren zu ihrer Herstellung und photovoltaisches Bauelement mit einer solchen Mehrschichtelektrode
WO2011036145A1 (fr) 2009-09-24 2011-03-31 Empa Cellule solaire multicouche composée de couches minces organiques
CN110534650B (zh) * 2019-05-28 2021-08-10 华南理工大学 一种自滤光窄光谱响应有机光探测器
GB2588824A (en) * 2019-11-11 2021-05-12 Dreamscience Propulsion Ltd Device and method

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US20060108578A1 (en) * 2004-11-23 2006-05-25 Au Optronics Corporation Organic photoelectric device with improved electron transport efficiency
WO2006092135A1 (fr) * 2005-03-04 2006-09-08 Heliatek Gmbh Composant photoactif a couches organiques
WO2008008477A2 (fr) * 2006-07-14 2008-01-17 The Trustees Of Princeton University Architectures et critères pour la conception de cellules photovoltaïques organiques d'une efficacité élevée

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CN1774823B (zh) * 2003-03-19 2010-09-08 赫里亚泰克有限责任公司 带有有机层的光活性组件
DE10326546A1 (de) 2003-06-12 2005-01-05 Siemens Ag Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften
MX2007006651A (es) * 2004-12-02 2008-10-24 Univ Princeton Dispositivos fotosensibles de estado solido que emplean complejos fotosinteticos aislados.
GB2429837A (en) * 2005-07-25 2007-03-07 Kontrakt Technology Ltd Organic photovoltaic device comprising polycrystalline discotic liquid crystal
DE102007009995A1 (de) 2007-03-01 2008-09-04 Hahn-Meitner-Institut Berlin Gmbh Organische Solarzelle

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US20060108578A1 (en) * 2004-11-23 2006-05-25 Au Optronics Corporation Organic photoelectric device with improved electron transport efficiency
WO2006092135A1 (fr) * 2005-03-04 2006-09-08 Heliatek Gmbh Composant photoactif a couches organiques
WO2008008477A2 (fr) * 2006-07-14 2008-01-17 The Trustees Of Princeton University Architectures et critères pour la conception de cellules photovoltaïques organiques d'une efficacité élevée

Non-Patent Citations (2)

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Title
See also references of EP2132799A2 *
STEFAN HILLER, DERCK SCHLETTWEIN, NEAL R. ARMSTRONG, DIETER WÖHRLE: "Influence of surface reactions and ionization gradients on junction properties of F16PcZn" JOURNAL OF MATERIALS CHEMISTRY, Bd. 8, Nr. 4, April 1998 (1998-04), Seiten 945-954, XP002506903 *

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Publication number Publication date
EP2132799A2 (fr) 2009-12-16
DE102007009995A1 (de) 2008-09-04
DE102008012417A1 (de) 2009-09-03
WO2008104173A3 (fr) 2009-03-05

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