GB2588824A

GB2588824A - Device and method

Info

Publication number: GB2588824A
Application number: GB1916348.4A
Authority: GB
Inventors: Edward Alexander Contoret Adam
Original assignee: Dreamscience Propulsion Ltd
Current assignee: Dreamscience Propulsion Ltd
Priority date: 2019-11-11
Filing date: 2019-11-11
Publication date: 2021-05-12
Also published as: GB201916348D0; WO2021094719A1

Abstract

An alleged reactionless drive device 100,500 for generating a propulsive force comprises an electromagnet 120 and at least one multi-layer structure 110 having an active layer 116 in between an anode layer 112 and a cathode layer 114. The active layer comprises a plurality of directionally aligned molecules 240. The electromagnet applies a modulated magnetic field across the multi-layer structure in line with the directionally aligned molecules such that, in conjunction with the application of an electric field across the anode and cathode layers, allegedly results in a net force in parallel to the applied magnetic field. The modulated magnetic field may 90 degrees out of phase with the modulated electric field. A further magnet 130 may be provided opposite the electromagnet such that the modulated magnetic field is between the magnets. The or a plurality of multi-layer structures 110a-n may be positioned between the magnets. The multi-layer structure may comprise a hole injection layer 122 positioned between the anode and the active layer, and an electron injection layer 124 positioned between the cathode and the active layer. The active layer may be a semiconductor material or an organic liquid crystalline conjugated oligomer material.

Description

DEVICE AND METHOD

The present invention relates to a device and method. In particular, but not exclusively, the present invention relates to a device for generating a force and a method thereof

BACKGROUND

Traditionally, forces may be generated using various reactive means, whereby for an action, there is a reaction. For example, a wheel imparts a force to the road and the road imparts an opposite reaction to the wheel, resulting in the wheel moving. Similarly, with propellers, water jets and so on, an action results in a propulsive reaction. However, in 2003, Roger Shawyer demonstrated that closed systems filled with microwaves with no exhaust produced a small thrust and this ushered in a field of reaction-less drives. There is no widely accepted theory of how this might work, though Shawyer claims that relativistic effects produce different radiation pressures at the two ends of the drive, leading to a net force. NASA researchers have suggested that the drive is actually pushing against "quantum vacuum virtual plasma" of particles that shift in and out of existence. Either way, a measured force is generated and it would follow that the strength of the force generated would be dependent on the density of the plasma. Electrically excited Electroluminescent (EL) materials effectively contain a plasma discharge, and this is much more dense than vacuum and it would therefore follow that EL materials which can effectively contain solid state plasma would be superior to microwave cavities for thrust generation in that the virtual plasma density should be higher in the solid state. Each molecule serves as a cavity as described by Shawyer and the anisotropy of the aligned EL molecules serves to give the cavities substantial similar direction.

BRIEF SUMMARY OF THE DISCLOSURE

According to a first aspect of the present invention there is provided a device for generating a force, the device comprising; at least one multi-layer structure comprising: an anode layer; a cathode layer; and an active layer between the anode layer and the cathode layer, wherein the active layer comprises a plurality of directionally aligned molecules; an electromagnet magnet, wherein the electromagnet is configured to apply a modulated magnetic field across the multi-layer structure in line with the directionally aligned molecules, such that application of the modulated magnetic field and application of an electric field across the anode layer and cathode layer results in a net force substantially parallel to the applied magnetic field.

According to a second aspect of the present invention there is provided a method of generating a force, the method comprising; applying a modulated electric field across at least one multi-layer structure, the at least one multi-layer structure comprising: an anode layer; a cathode layer; and an active layer between the anode layer and the cathode layer, wherein the active layer comprises a plurality of directionally aligned molecules; applying a modulated magnetic field across the multi-layer structure such that the direction of the magnetic field is in line with the directionally aligned molecules, wherein the application of the modulated magnetic field and application of the modulated electric field results in a net force substantially parallel to the applied magnetic field.

According to a third aspect of the present invention, there is provided a method of manufacturing a device for generating a force, the method comprising; providing an at least one multi-layer structure, the at least one multi-layer structure comprising: an anode layer; a cathode layer; and an active layer between the anode layer and the cathode layer, wherein the active layer comprises a plurality of directionally aligned molecules providing an electromagnet magnet, wherein the electromagnet is configured to apply a modulated magnetic field across the multi-layer structure in line with the directionally aligned molecules, such that application of the modulated magnetic field and application of an electric field across the anode layer and cathode layer results in a net force substantially parallel to the applied magnetic field.

Certain embodiments of the invention provide the advantage that a device capable of producing a net force is provided.

Certain embodiments of the invention provide the advantage that a resultant force in a specific direction may be provided.

BREIF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention are further described hereinafter with reference to the accompanying drawings, in which: Fig. la illustrates an example of a device for generating a force; Fig. lb illustrates the device of Fig. la with an applied magnetic field; Fig. 2a illustrates a further example of a device for generating a force; Fig. 2b illustrates the device of Fig. 2a with an applied magnetic field; Fig. 3a illustrates a partial Lewis structure of an example polymeric molecule that can be used in a hole injecting layer; Fig. 3b illustrates a Lewis structure of an example molecule that can be used in an active layer Fig. 3c illustrates a Lewis structure of an example molecule that can be used in an electron injecting layer; Fig. 4 illustrates a method of manufacturing the device; Fig. 5a illustrates an example of a stacked device; Fig. 5b illustrates another example of a stacked device; Fig. 6 illustrates a method of generating a force; and Fig. 7 illustrates timing of the applied electric and magnetic field.

In the drawings like reference numerals refer to like parts.

DETAILED DESCRIPTION

As used herein the term "directionally aligned molecules" is used to refer to two or more molecules, wherein the longitudinal axes of the molecules are substantially parallel with respect to each other. The aligned molecules are typically electrically conductive. The aligned molecules are typically organic molecules (e.g. they comprise only atoms selected from C, H, 0, S, N, P, Cl, Br, l). The molecules in the active layer may be uncharged (when not exposed to an electric field) or they may be anionic or cationic. Electrically conductive organic molecules typically comprise a conjugated 7-system along at least a portion of their length. Said 7-system may comprise at least 10 delocalised electrons, e.g. at least 14 delocalised electrons. Organic semiconductors such as those typically used in OLED devices are particularly suitable for use as the aligned molecules in the active layer.

The aligned molecules are typically elongate, e.g. they have a length that is greater than their width. The aligned molecules may have a continuous chain of atoms along their length that is greater than 30 atoms. The aligned molecules are typically monomeric.

As used herein, the term "director" is used to describe the direction of preferred orientation of molecules in a liquid crystal.

As used herein, the term "aligned nematic glass phase" is used to describe rod-shaped organic molecules which have no positional order, but they self-align to a substrate layer, for example a rubbed substrate, so they have long-range directional order with their long axes roughly parallel without crystal boundaries between molecules.

The nematic phase is such that the rod-shaped organic molecules have no positional order, but they self-align to a substrate layer, for example a rubbed substrate, so they have long-range directional order with their long axes roughly parallel. Crystal boundaries can occur between molecules which hinders electrical conduction. Molecules can be engineered, such that these crystal boundaries do not form, resulting is a continuous nematic phase know as a glass.

As used herein, a "modulated field" is used to describe a field in which the waveform has an oscillating value, either between an off and on state or a high value and low value state.

Fig. la and Fig. lb illustrate a device 100 for generating a force. In this example, the device includes a multi-layer structure 110, an electromagnet 120 and a further magnet 130. Fig. lb illustrates the device 100 of Fig. la with an applied magnetic field. The direction of the magnetic field is indicated by arrows A. In this example, the multi-layer structure 110 includes an anode layer 112, a cathode layer 114 and an active layer 116. The active layer 116 is positioned between the anode layer 112 and the cathode layer 114.

In this example, the multi-layer structure 110 further includes a hole injection layer 122. In this example, the hole injection layer 122 is positioned between the active layer 116 and the anode layer 112. In some examples the hole injection layer 122 may be manufactured to act as an aligning layer.

The multi-layer structure 110 may further include an electron injection layer 124. In this example, the electron injection layer 124 is positioned between the active layer 116 and the cathode layer 114.

In this example, the multi-layer structure 110 is is from 100 nanometres to 10 micrometres thick. Aptly the anode layer 112 may be from 20 nanometres to several microns thick. The hole injection layer 122 may be from 30 nanometres to 80 nanometres thick. The active layer 116 may be from 20 nanometres to 100 nanometres thick. The electron injection layer 124 may be from 10 nanometres to 50 nanometres thick. The cathode layer 114 may be from 80 nanometres to 120 nanometres thick.

The active layer 116 is formed from a material including a plurality of directionally aligned molecules 140. The molecules 140 are elongate molecules. In other words, the molecules 140 have a length that is greater than their width. In this example, the longitudinal axes of the directionally aligned molecules 140 are aligned in substantially the same direction. In other words, the longitudinal axis of the directionally aligned molecules 140 are substantially parallel.

In this example, the multi-layer structure 110 is in a homeoplanar configuration. That is, the longitudinal axes of the directionally aligned molecules 140 are parallel to the longitudinal axes of the layers of the multi-layered structure. The director of the active layer 116 is parallel with the longitudinal axis 108 of the active layer 116.

In this example, the anode layer 112 and cathode layer 114 are connected to a power source 150. The power source is configured to provide a potential difference between the anode layer 112 and the cathode layer 114. The power source 150 may provide an output voltage from 3 to 10 volts.

The device 100 further includes an electromagnet 120 and a further magnet 130 positioned opposite the electromagnet 120. When active, the electromagnet 120 applies a magnetic field (shown by lines A). In this example the magnetic field is between the electromagnet 120 and the further magnet 130. In this example, the further magnet 130 is a permanent magnet. In other examples, the further magnet 130 may be a second electromagnet.

In this example, the electromagnet 120 has a magnetic field strength from 0.5 to 10 Tesla. The further magnet has a magnetic field strength from 0.05 to 0.2 Tesla.

The multi-layer structure 110 is disposed between the electromagnet 120 and the further magnet 130. The electromagnet 120 and further magnet 130 are configured such that the magnetic field may be applied across the multi-layer structure 110 such that the magnetic field is in line with the directionally aligned molecules 140 of the active layer 116. In this example, the direction of the magnetic field A is substantially parallel to the longitudinal axis 108 of the active layer 116.

In this example, as the multi-layer structure 110 is in a homeoplanar configuration the multi-layer structure is positioned in a lateral orientation between the electromagnet 120 and further magnet 130. Therefore, the longitudinal axes of the elongate molecules 140 is in line with the direction of the magnetic field A. The lateral orientation of the multi-layer structure 110 is such that the electromagnet 120 and further magnet 130 are placed in line with the longitudinal axis 108 of the active layer 116.

The distance between the electromagnet 120 and the further magnet 130 may be 1 millimetre to 10 centimetres for example. A strong and uniform field is advantageous, so as close a proximity of the magnets as practicable is best. The closer the magnets, the stronger the force generated.

The electromagnet 120 and further magnet 130 are configured to apply a modulated magnetic field across the multi-layer structure 110.

In this example, the application of the modulated magnetic field and application of an electric field across the anode layer 112 and cathode layer 114 produces a net force substantially parallel to the applied magnetic field The electromagnet 120 may be coupled to a further power source 152, such that the electromagnet 120 can be switched on and off, or have an increased and decreased power input. The power supply voltage can therefore be varied to provide the modulated

magnetic field.

In this example, the modulation of the magnetic field is controlled to be out of phase with the modulation of the electric field. Aptly the modulation of the magnetic field to be 90 degrees out of phase with the modulation of the electric field.

The device 100 may further include a controller (not shown). The controller may be configured to control the modulation of the magnetic field and electric field. The controller may be configured to control the activation and/or supply voltage of the power source 150 and further power source 152. The controller may therefore determine the frequency at which the electromagnet 130 is turned on and off, or the controller may control the strength of the applied magnetic field by controlling the supply voltage. The controller may also determine the frequency at which the power source 150 is turned on and off. The controller may therefore determine the frequency at which the electric field is active and inactive and thereby determining the frequency at which a potential difference is induced across the active layer 116.

Fig. 2a and Fig. 2b illustrate a device 200 in an alternative configuration. The device 200 includes a multi-layer structure 210, an electromagnet 220 and a further magnet 230. Fig. 2b illustrates the device 200 of Fig. 2a with an applied magnetic field. The direction of the magnetic field is indicated by arrows B. Components of the device which are the same as those described in reference to Fig. la and Fig. lb will not be described again for brevity. As above, the multi-layer structure 210 includes an anode layer 212, a hole injection layer 222, an active layer 216, an electron injection layer 224 and a cathode layer 214.

In this example, the multi-layer structure 210 is in a homeotropic configuration. That is, the longitudinal axes of the molecules 240 of the active layer 216 of the multi-layer structure 210 are perpendicular to the longitudinal axis 208 of the active layer 216. The director of the active layer 216 is therefore perpendicular to the longitudinal axis 208 of the active layer 216.

As above, the multi-layer structure 210 is disposed between the electromagnet 220 and the further magnet 230. The multi-layer structure 210 is positioned between the electromagnet 220 and further magnet 230 so that the magnetic field may be applied across the multi-layer structure 210 such that the magnetic field is in line with the directionally aligned molecules 240. In this example the direction of the magnetic field B is substantially perpendicular to the longitudinal axis 208 of the active layer 216.

As shown in Fig. 2b, as the multi-layer structure 110 is in a homeotropic configuration the multi-layer structure is positioned in a longitudinal orientation between the electromagnet 220 and further magnet 230. Therefore, the longitudinal axes of the elongate molecules 240 will be in line with the direction of the magnetic field B. The longitudinal orientation of the multi-layer structure 210 is such that the electromagnet 220 and further magnet 230 are positioned such that the applied magnetic field B is perpendicular to the longitudinal axis 208 of the active layer 216.

Fig. 4 illustrates an example method of manufacturing a multi-layer device. In this example, the multi-layer device is built up from the anode layer to the cathode layer.

Starting from the anode layer, at step 5402 a hole injection layer is deposited onto the anode layer. In this example the anode is a flat substrate. The hole injection layer is deposited onto the anode layer via spin coating. For example, the hole injection layer is deposited by spin coating at 5000 revolutions per minute. In this example, the hole injection layer is 50 nanometres thick.

The hole injection layer may then be cured. For example, the hole injection layer may be cured at 165 Degrees Celsius for 5 minutes.

At step 8404, the hole injection layer is then rubbed. In this example, the hole injection layer is rubbed in one direction. Rubbing the hole injection layer in one direction produces an aligning surface. The aligning surface may, upon application, help to align the molecules of the active layer.

At step 8406, the active layer is then applied onto the hole injection layer. In this example the active layer is coated onto the hole injection layer via spin coating. In this example the active layer is deposited by spin coating from a 0.5% solution of the molecules that will be aligned in chloroform. Aptly, the active layer is deposited by spin coating at 2000 revolutions per minute. In this example, the formed active layer is 40 nanometres thick.

The molecules of the active layer are aligned in substantially the same direction. That is, the longitudinal axes of the molecules are substantially parallel.

At step 8408, the partial layered structure of the anode layer, hole injection layer and active layer is then heated 8408. The partial layered structure is heated so that the active layer reaches an isotropic phase. In this example, the partial layered structure is heated to 120 Degrees Celsius. Once the isotropic phase has been reached the partial layered structure is then cooled at step 8410. The cooling is carried out slowly. For example, the partial layered structure may be cooled by 3 Degrees Celsius per minute. The slow cooling of the partially layered structure allows the active layer to align in a nematic glass phase. The slow cooling may also lock in a nematic homeo-planar anisotropy. Aptly the molecules of the active material preferentially align with the rubbed structure of the hole injection layer.

Once cooled, an electron injecting layer is applied to the active layer at step S412. In this example the electron injecting layer is applied to the active layer by physical vapour deposition. In this example the electron injecting layer is 30 nanometres thick.

The cathode layer is then applied to the electron injecting layer S414. In this example the cathode layer is applied by physical vapour deposition. The electron injecting layer and cathode layer are applied in a vacuum. The cathode may be made up of multiple layers, for example, a lithium fluoride layer and an aluminium layer. Aptly the lithium fluoride layer may be 1 nanometre thick and the aluminium layer 100 nanometres thick.

To form the device as discussed above, the completed multi-layer structure may be positioned between an electromagnet and a further magnet. The multi-layer structure is positioned such that the magnetic field between the electromagnet and further magnet is in line with the directionally aligned molecules of the active layer.

The method may optionally further include a step of checking the alignment of the molecules in the active layer. This step may applying a low voltage across the device (e.g. 4 Volts) so that emission is observed and measuring the electroluminescence.

Figs. 5a and 5b illustrates examples of a device 500, where the device 500 has a plurality of multi-layer structures 110a-n. The device 500 has an electromagnet 120 and a further magnet 130. In Fig. 5a the multi-layered structures are in a homeoplanar configuration similar to the device discussed above in relation to Figs. la and 1 b. In Fig. 5b the multi-layered structures are in a homeotropic configuration similar to the device discussed above in relation to Figs. 2a and 2b.

Referring first to Fig. 5a, in this example, the plurality of multi-layer structures 110a-n are positioned in a stacked configuration. A first multi-layer structure 110a is positioned adjacent to a second multi-layer structure 110b. A third multilayer structure 110c is positioned adjacent to the second multi-layer structure 110b on an opposite side to the first multi-layer structure 100a. In this way the multi-layer structures 110a-11On are positioned adjacent to one another to form the stack. An example device 500 may have a stack including from 100 to 1000 multi-layer structures 110.

Each multi-layer structure 110a-110n in the stack is positioned such that the anode layer and cathode layers are electronically separated from the anode layers and cathode layers of adjacent multi-layered structures 110a-11On. For example, an electrically insulating layer may be positioned between an anode layer of a first multi-layer structure 110a and a cathode layer of an adjacent second multi-layer structure 110b. The insulating layer acts to prevent short-circuiting between the anode and cathode layers of the multilayer structures.

In this example the multi-layer structures 110a-n are in a homeoplanar configurations. The multi-layer structures 110a-n are in a lateral configuration with respect to the electromagnet 120 and further magnet 130.

The multi-layer structures 110a-n may be electrically connected to a single power source 450. In this example, the multi-layer structures 110a-n are connected in parallel to the power source 450.

By stacking the multi-layer structures 110a-n the device 500 can generate a force from 100 micro grams to 1 gram, for 10000 stacked structures for a device of surface area 1 square centimetre. 1 gram of force can be generated per square centimetre of 10000 stacked structures. The device 500 could therefore be used for satellite positioning, or for reducing weight of platforms, for example.

The stacked device shown in Fig. 5b is substantially identical to that shown in Fig. 5a but with the multi-layered devices arranged in a homeotropic configuration rather than a homeoplanar configuration. As such, for brevity, the device will not be described again in detail.

The devices described above generate a force when a modulated electric field is applied across the multi-layer structure and a modulated magnetic field is also applied across the multi-layer structure. The direction of the magnetic field is in line with the directionally aligned molecules of the active layer of the multi-layer structure. The resulting net force is substantially parallel to the applied magnetic field.

Fig. 6 illustrates an example of a method of controlling the modulation of the electric field and the magnetic field. Fig. 7 illustrates the applied electric field 701 and magnetic field 702 over time.

Firstly, the electric field 701 is activated at step 3602 (ti). The electric field 701 is applied across the multi-layer structure as discussed above. The electric field 701 activates the active layer. That is, the application of the electric field promotes the molecules of the active layer to an excited state (sometimes referred to as exciton or polaron).

The magnetic field is then activated at step S604 (t2). The magnetic field is activated after activation of the electric field. In this example the activation of the magnetic field partially coincides with activation of the electric field. As the magnetic field is applied through the excited molecules of the active layer the interaction between the magnetic field and the molecules is preferential. This is because a magnetic field will interact more strongly with an electrically excited molecules than unexcited molecules.

The electric field is then de-activated at step 3606 (t3). When the electric field is no longer active the active layer becomes de-activated. The deactivation of the electric field causes the molecules of the active layer de-excite (i.e. to return to an unexcited state). The interaction between the un-excited molecules and the magnetic field is therefore unpreferential.

The magnetic field is then de-activated at step 3608 (t4) to complete the cycle. The cycle including steps 3602 to 3608 can then be repeated. In this example the device is operated in a repeating cycle of the above steps. Aptly the cycle may be repeated at a frequency from 100 Hz to 1000 kHz.

The difference between preferential and un-preferential interaction of the molecules with the modulating magnetic field is manifested as a net force. This net force can be measured as a change in weight of the device.

The force generated is proportional to the frequency of applied electric and magnetic field, the number of multi-layered structures in the stack mounted between the magnets, and the difference between the magnetic field strength of the electromagnet and the further magnet. For example if one structure generates 100 micrograms of force, then it follows that 2 structures will generate 200 micrograms and so on, up to the limit of the number of devices that can fit between the magnets. Conversely, if the spacing between the magnets is increased to accommodate more structures, then the magnetic field will be weaker and so will the force generated be weaker.

Various modifications to the detailed designs as described above are possible. For example, although the hole injection layer and electron injection layer have been described as distinct layers to the active layer, in some examples, the hole injection layer and active layer may be integral, or the electron injection layer and active layer may be integral, or the hole injection layer, active layer and electron injection layer may be one integral material.

Although described as a permanent magnet, in some examples the further magnet may be a further electromagnet.

Although the examples described above include both a permanent magnet an electromagnet, in other examples, the device may include only an electromagnet and no permanent magnet. For example, the electromagnet may interact with a further magnet separate to the device.

Throughout the method of manufacturing the multi-layer structure, various coating and application techniques are described. It should be understood that any appropriate technique can be used for building up the multi-layer structure.

Although the method of manufacturing the multi-layer device specifies a rubbing step to align the molecules of the active layer, any suitable aligning method may be used for example photo alignment via electric and magnetic fields during the annealing phase.

With the above-described arrangements a force can be generated. The force may be suitable for use in a reactionless drive. Additionally, or alternatively the device may be suitable to reduce weight of heavy objects such as platforms.

The above described arrangement provides the advantage that a force can be generated in a specific and controlled direction.

Advantageously, the multi-layer structure as described above may be stacked so as to provide an overall net force of a substantial value.

The above described arrangement advantageously provides a device capable of interacting with magnetic and electric fields such that the interaction results a net force.

The above described arrangement provides a solid state device. A solid state device is more robust than other drives currently being studied, for example vacuum and microwave electromagnetic drives.

EXAM PLES

An example of a device is discussed below.

Organic liquid crystalline conjugated molecules, e.g. the molecule depicted in figure 3b, suitable for use as directionally aligned molecules in the devices of the invention can be made according to or analogously to the methods described in: Liedtke et a/ (Chem. Mater. 2008, 20, 11, 3579-3586), Tsoi et al (Chem. Mater. 2007, 19, 5475-5484) and/or Aldred et a/ (Chem. Mater. 2004, 16, 4928-4936).

Experimental details Going from anode to cathode a multi-layered device is built up. The device is built on a flat glass substrate pre-coated with Indium Tin Oxide (ITO) as the anode. The substrate is Ossila S241 with ITO resistance at 20 Ohms/square. A hole transporting aligning layer is deposited onto this substrate via spin coating. Baytron PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate; depicted in figure 3a), a well-known hole transport material is deposited by spin coating at 5000rpm followed by 5 minutes curing at 165 DegC. The cured PEDOT:PSS film of approximately 50nm thickness is then rubbed in one direction to induce an aligning surface. Next, the organic liquid crystalline conjugated molecule depicted in figure 3b is coated on top of this aligning hole injecting substrate.

This is done by spin coating from a 0.5% solution in chloroform at 2000rpm. The subsequent film of approximately 40nm is then heated to about 120DegC to reach it's isotropic phase [Cr 120 N (.71)I] then slowly cooled at 3 DegC per minute into an aligned nemafic glass phase to lock in a nematic homeo-planar anisotropy -the molecules of the active material preferentially align with the rubbed structure of the Baytron P. Next an electron transporting layer of 2,2',2"-(1,3,5-BenzinetriyI)-tris(1-phenyl-1-H-benzimidazole) (TPBi; depicted in figure 3c) of approximately 30nm thickness is applied by physical vapour deposition, followed by a mm Lithium Fluoride layer and finally a 100nm aluminium layer -all deposited under vacuum, to complete the cathode. Including anode and cathode, the thickness of a complete structure on top of the substrate is of the order 100s nm to a few microns. To measure the extent of alignment of the active layer, electroluminescence measurements are carried out at low voltage, about 4 volts, so that emission is observed of the few Candelas per Square meter. The electroluminescence was observed through a rotating polariser and ranged from 1.2 to 2.8 Cd/m2. This shows an alignment of the active layer of 2.3: 1.

Next, the device is inserted between a permanent magnet and an electromagnet, such that the aligned molecules are pointing preferentially in the direction of the lines of magnetic force between the permanent and electromagnet (similarly to that shown in Fig. 1b).

The whole assembly of permanent magnet, device and electromagnet weight was then mounted on a microbalance AND BM-252 and electrical connection to the device and electromagnet was made using thin single strand copper wire, supported from a fixed point, so as not to alter the weight measurement. The permanent magnet has field strength of the order 1T and the electromagnet can be modulated in the order of 0.1T. The voltage applied across the anode and cathode of the device was between 3 and 10 volts.

The device was operated in a repeating cycle of frequency of 100's Hz. Going through one cycle, step by step: -Firstly, the aligned active layer in the structure/s is electrically activated by application of a potential difference across the anode and cathode. This promotes the aligned anisotropic molecules to an excited state (sometimes referred to as exciton / polaron). This excited state is visible as electroluminescence.

-Next, a magnetic field is applied through the excited molecules and their interaction with the magnetic field is preferential due to the molecules being aligned with the magnetic

field.

-Next, the electrical field is switched off, allowing the anisotropic molecules to return to an unexcited state. In the unexcited state the magnetic field interaction is now un-preferential. -Finally, the magnetic field is switched off.

Results and interpretation The Permanent magnet, device and electromagnet were arranged on the balance and left to settle for 30 minutes. The weight settled at 16.50355 grams. Next a +/-6 volts square wave (12 Volts peak to peak), 100Hz electric current was applied to the device resulting in electroluminescent emission of about 300 Cd/m2. No change in weight reading was observed. The device electric current was switched off, then the electromagnet was operated at 100Hz square wave, +/-6 volts (12 Volts peak to peak). No change in the weight reading was observed. These two runs served as the control experiment to show no unfavourable interaction of the wiring, magnets and electric fields with the balance. Finally, both the device and electromagnet were driven as above and with a 90 degree phase difference between the electric and magnetic field -as shown in fig. 7. Under these conditions, a small change in weight was observed. The weight changed from 16.50355g to between 16.50330g and 16.50335g, showing a small weight change of about 0.2mg. The same conditions were then used with a non-aligned device -this showed no weight change. This leads to the conclusion that the interaction of the magnetic field with the excited aligned material is different to the interaction with the unexcited aligned material. This is likely due to a difference in momentum capture between the excited and unexcited states in the presence of a magnetic field and this manifests itself as a small force.

It will be clear to a person skilled in the art that features described in relation to any of the embodiments described above can be applicable interchangeably between the different embodiments. The embodiments described above are examples to illustrate various features of the invention.

Throughout the description and claims of this specification, the words "comprise" and "contain" and variations of them mean "including but not limited to", and they are not intended to (and do not) exclude other moieties, additives, components, integers or steps. Throughout the description and claims of this specification, the singular encompasses the plural unless the context otherwise requires. In particular, where the indefinite article is used, the specification is to be understood as contemplating plurality as well as singularity, unless the context requires otherwise.

Features, integers, characteristics, compounds, chemical moieties or groups described in conjunction with a particular aspect, embodiment or example of the invention are to be understood to be applicable to any other aspect, embodiment or example described herein unless incompatible therewith. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and/or all of the steps of any method or process so disclosed, may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. The invention is not restricted to the details of any foregoing embodiments. The invention extends to any novel one, or any novel combination, of the features disclosed in this specification (including any accompanying claims, abstract and drawings), or to any novel one, or any novel combination, of the steps of any method or process so disclosed.

The reader's attention is directed to all papers and documents which are filed concurrently with or previous to this specification in connection with this application and which are open to public inspection with this specification, and the contents of all such papers and documents are incorporated herein by reference.

Claims

CLAIMS1 A device for generating a force, the device comprising; at least one multi-layer structure comprising: an anode layer; a cathode layer; and an active layer between the anode layer and the cathode layer, wherein the active layer comprises a plurality of directionally aligned molecules; an electromagnet magnet, wherein the electromagnet is configured to apply a modulated magnetic field across the multi-layer structure in line with the directionally aligned molecules, such that application of the modulated magnetic field and application of an electric field across the anode layer and cathode layer results in a net force substantially parallel to the applied magnetic field.
2. A device as claimed in claim 1, wherein the device further comprises a further magnet opposite the electromagnet, such that the modulated magnetic field is between the electromagnet and the further magnet.
3. A device as claimed in claim 2, wherein the at least one multi-layer structure is positioned between the electromagnet and further magnet.
4. A device as clamed in any preceding claim, wherein the at least one multi-layer structure further comprises a hole injection layer and an electron injection layer.
5. A device as claimed in claim 4, wherein the hole injection layer is between the anode and the active layer, and wherein the electron injection layer is between the cathode and the active layer.
6. A device as claimed in any preceding claim, wherein the active layer is an organic liquid crystalline conjugated oligomer material.
7. A device as claimed in claim 6, wherein the active layer is annealed into an aligned nematic glass phase, such that the molecules have homeo-planar anisotropy.
8 A device as claimed in any preceding claim, wherein a longitudinal axis of each of the molecules of the active layer are aligned in substantially the same direction.
9. A device as claimed in any preceding claim wherein the active layer is a semiconductor material.
10. A device as claimed in claim 9, wherein the active layer is a doped semi-conductor material.
11. A device as claimed in any preceding claim, wherein the at least one multi-layer structure is between 100 nanometres to 10 micrometres thick.
12. A device as claimed in any of claims 2 to 11, wherein the electromagnet and the further magnet are positioned such that the applied modulating magnetic field is substantially in line with a longitudinal axis of each of the plurality of directionally aligned molecules of the active layer.
13. A device as claimed in any preceding claim, wherein the electromagnet is configured to have a magnetic field strength from 0.5 to 10 Tesla.
14. A device as claimed in claim 2, wherein the further magnet is a permanent magnet.
15. A device as claimed in claim 14, wherein the further magnet is configured to have a magnetic field strength from 0.05 to 0.2 Tesla.
16. A device as claimed in any preceding claim wherein the anode and the cathode are configured to be connected to a power source, the power source configured to provide an output voltage from 3 to 10 volts.
17. A method of generating a force, the method comprising; applying a modulated electric field across at least one multi-layer structure, the at least one multi-layer structure comprising: an anode layer; a cathode layer; and an active layer between the anode layer and the cathode layer, wherein the active layer comprises a plurality of directionally aligned molecules; applying a modulated magnetic field across the multi-layer structure such that the direction of the magnetic field is in line with the directionally aligned molecules, wherein the application of the modulated magnetic field and application of the modulated electric field results in a net force substantially parallel to the applied magneticfield.
18. A method as claimed in claim 17, wherein the method comprises controlling the modulation of the magnetic field to be out of phase with the modulation of the electric field.
19. A method as claimed in claim 18, wherein the method comprises controlling the modulation of the magnetic field to be 90 degrees out of phase with the modulation of the electric field.
20. A method as claimed in any of claims 17 to 19 wherein the method comprises controlling the modulation of the electric field and the magnetic field in a cycle, the cycle comprising;a. activating the electric field;b. activating the magnetic field such that activation of the magnetic field at least partially coincides with activation of the electric field;c. de-activating the electric field; andd. de-activating the magnetic field after de-activation of the electric field.
21. A method as claimed in claim 20, further comprising repeating the cycle at a frequency from 100 hertz to 100 kilohertz.
22. A method of manufacturing a device for generating a force, the method comprising; providing an at least one multi-layer structure, the at least one multi-layer structure comprising: an anode layer; a cathode layer; and an active layer between the anode layer and the cathode layer, wherein the active layer comprises a plurality of directionally aligned molecules providing an electromagnet magnet, wherein the electromagnet is configured to apply a modulated magnetic field across the multi-layer structure in line with the directionally aligned molecules, such that application of the modulated magnetic field and application of an electric field across the anode layer and cathode layer results in a net force substantially parallel to the applied magnetic field.
23. A method as claimed in claim 22, wherein the method further comprises providing a further magnet opposite the electromagnet, such that the modulated magnetic field is between the electromagnet and the further magnet.