WO2014020672A1 - Procédé permettant de produire une cellule solaire et cellule solaire - Google Patents

Procédé permettant de produire une cellule solaire et cellule solaire Download PDF

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Publication number
WO2014020672A1
WO2014020672A1 PCT/JP2012/069387 JP2012069387W WO2014020672A1 WO 2014020672 A1 WO2014020672 A1 WO 2014020672A1 JP 2012069387 W JP2012069387 W JP 2012069387W WO 2014020672 A1 WO2014020672 A1 WO 2014020672A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
photoelectric conversion
conductive particles
connection electrode
conversion unit
Prior art date
Application number
PCT/JP2012/069387
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English (en)
Japanese (ja)
Inventor
翔士 佐藤
悟司 東方田
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to PCT/JP2012/069387 priority Critical patent/WO2014020672A1/fr
Priority to JP2014527845A priority patent/JP5934984B2/ja
Publication of WO2014020672A1 publication Critical patent/WO2014020672A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell manufacturing method and a solar cell formed by the method.
  • thermosetting conductive paste As one of the conductor formation methods for solar cells, a method using a thermosetting conductive paste is known.
  • the thermosetting conductive paste is applied to the substrate by means of screen printing or the like, and is heat-treated at a temperature of about 100 ° C. to 300 ° C., thereby curing the resin and forming a conductive electrode.
  • thermosetting conductive paste containing conductive particles and a resin two or more kinds of conductive particles may be mixed and used, and the shape of the conductive particles may be spherical, flaky, or dendritic.
  • limiting such as a shape and a fibrous form, it is said that powder particles are easy to contact each other and it is advantageous at an electroconductive point.
  • a balance between the improvement of conductivity in the wiring electrode and the stress caused by the fusion is achieved.
  • a paste material containing conductive particles is prepared, the paste material is applied so as to have a longitudinal direction on the main surface of the photoelectric conversion unit, and the paste material is formed at a predetermined temperature.
  • the conductive particles so that the fusion rate of the conductive particles at the end of the photoelectric conversion unit along the longitudinal direction is lower than the fusion rate at the center of the photoelectric conversion unit along the longitudinal direction. Are fused together to form a connection electrode.
  • a solar cell according to the present invention includes a photoelectric conversion unit and a connection electrode arranged in a longitudinal direction on a main surface of the photoelectric conversion unit, and the connection electrodes are fused together to form a network structure.
  • the fusion rate of the conductive particles at the end of the photoelectric conversion unit along the longitudinal direction is such that the conductive particles at the center of the photoelectric conversion unit along the longitudinal direction It is comprised so that it may become lower than a fusion rate.
  • a solar cell according to the present invention includes a photoelectric conversion unit and a connection electrode arranged in a longitudinal direction on a main surface of the photoelectric conversion unit, and the connection electrodes are fused together to form a network structure.
  • the network structure causes aggregation peeling at the end of the photoelectric conversion part along the longitudinal direction, and the central part of the photoelectric conversion part along the longitudinal direction. It is comprised so that interface peeling may be produced in.
  • FIG. 1 it is a figure which shows the process which forms the electrode for a connection of a solar cell with the electrically conductive paste which becomes a network structure by heating.
  • FIG. 1 it is a figure which shows the process which arrange
  • FIG. 1 it is a figure which shows the process which sets a crimping
  • FIG. 1 is a flowchart showing a procedure of a method for manufacturing a solar cell module.
  • 2 to 4 are diagrams for explaining each procedure in this flowchart.
  • the solar cell module is obtained by connecting solar cells with a wiring material, a solar cell is prepared in order to manufacture the solar cell module.
  • the photoelectric conversion unit 11 is formed (S10).
  • FIG. 2 is a diagram showing the solar cell 10, FIG. 2 (a) is a plan view, and FIG. 2 (b) is a side view.
  • the solar cell 10 includes a photoelectric conversion unit 11 that generates light-generated carriers of holes and electrons by receiving light such as sunlight.
  • the solar cell 10 has, as main surfaces, a light receiving surface that is a surface on which light from the outside of the solar cell 10 is mainly incident and a back surface that is a surface opposite to the light receiving surface, but in the plan view of FIG. The light receiving surface is shown.
  • the photoelectric conversion unit 11 includes a substrate made of a semiconductor material such as crystalline silicon (c-Si), gallium arsenide (GaAs), indium phosphide (InP), for example.
  • the structure of the photoelectric conversion unit 11 is a pn junction in a broad sense.
  • a heterojunction of an n-type single crystal silicon substrate and amorphous silicon can be used.
  • a transparent conductive film (TCO) 12 composed of a conductive oxide is stacked, and an i-type amorphous silicon layer and an n-type amorphous silicon layer doped with phosphorus (P) or the like are formed on the back side of the substrate,
  • the transparent conductive film 13 can be laminated.
  • the photoelectric conversion unit 11 may have a structure other than this as long as it has a function of converting light such as sunlight into electricity.
  • a structure including a p-type polycrystalline silicon substrate, an n-type diffusion layer formed on the light-receiving surface side, and an aluminum metal film formed on the back surface side may be used.
  • connection electrode 20 on the light receiving surface side is formed on the light receiving surface of the solar cell 10.
  • the connection electrode 20 is formed by several processing procedures.
  • the conductive paste is obtained by mixing conductive particles into a resin using a solvent.
  • a conductive paste in which conductive particles such as silver (Ag) are dispersed in a binder resin can be used.
  • a sintered conductive paste that becomes a network structure by heating is used as one having improved conductivity.
  • the network structure is a structure in which conductive particles are fused to each other. For example, by heating a conductive paste containing conductive particles, the conductive particles can be fused together to form a network structure.
  • the fusion rate M (%) can be used as an index of the degree to which the conductive particles are fused to each other.
  • a certain degree of fusion rate M is required.
  • a network structure a structure having a fusion rate M of 50% or more is called a network structure.
  • the spherical powder 21 and the flakes 22 are mixed in a predetermined ratio, and a paste material mixed with a resin such as an epoxy resin using a solvent is prepared (S11).
  • the spherical powder 21 is a substantially spherical conductive particle.
  • the flakes 22 are conductive particles having a ratio of major axis to thickness of powder particles (major axis / thickness) ⁇ 10 and an average particle diameter of about 2 to 5 ⁇ m or more.
  • the flakes 22 can be obtained, for example, by crushing the spherical powder 21 into a flat shape.
  • a flake mixing ratio FR which is a ratio of the mass of the flake 22 to the total mass of the conductive particles, can be used as the mixing ratio of the spherical powder 21 and the flake 22.
  • the flake mixing ratio FR is the number of flakes 22 relative to the total number of conductive particles. It is almost the same as the number ratio.
  • a conductive paste is applied to a predetermined location on the surface of the transparent conductive film 12 on the photoelectric conversion unit 11 (S12).
  • the conductive paste is applied to the predetermined place by screen printing.
  • Heating is performed. Heating is performed by increasing the temperature at a predetermined heating rate d ⁇ (° C./s), and when the target predetermined heating temperature ⁇ (° C.) is reached, maintaining at that ⁇ for a predetermined heating time.
  • the solvent evaporates by this heating (S13).
  • the solvent evaporation rate V (m 3 / s) is controlled by the heating rate d ⁇ , the heating temperature ⁇ , the heating time, and the like.
  • the conductive particles are fused to each other by heating to form a network structure (S14). That is, when the mixture of the spherical powder 21 and the flakes 22 is heated, the spherical powders 21 are fused together to form a network structure.
  • the fusion rate M becomes higher as the heating temperature ⁇ is higher and the heating time is longer.
  • connection electrode 20 on the light receiving surface side is formed.
  • a finger electrode is disposed in addition to the bus bar electrode serving as the connection electrode 20. In FIG. 2, the finger electrode is not shown.
  • the finger electrode is a thin wire electrode that collects electricity from the entire light receiving surface but is thinned so as to reduce the light shielding property.
  • the finger electrode and the bus bar electrode are arranged orthogonally to each other and electrically connected.
  • the width of the finger electrode is preferably about 30 ⁇ m to 150 ⁇ m, and the thickness is preferably about 10 ⁇ m to 80 ⁇ m.
  • the interval between adjacent finger electrodes is preferably about 0.5 mm to 3 mm.
  • the width of the bus bar electrode as the connection electrode 20 is preferably about 50 ⁇ m to 3 mm, and the thickness is preferably about 10 ⁇ m to 160 ⁇ m.
  • connection electrode 20 on the light receiving surface side similarly to the connection electrode 20 on the light receiving surface side, a sintered conductive paste containing spherical powder and flakes and having a network structure by heating is used.
  • a connection electrode 23 on the back side is formed on the surface of the transparent conductive film 13 (S15).
  • FIG. 2B shows connection electrodes 20 and 23 formed using a sintered conductive paste containing spherical powder 21 and flakes 22 and having a network structure by heating.
  • the wiring material is arranged.
  • the wiring material 25 is arranged on the connection electrode 20 on the light receiving surface side of the solar cell 10 via the adhesive 24, and similarly, the adhesive 26 is applied on the connection electrode 23 on the back surface side of the solar cell 10.
  • the wiring member 27 is placed through the wire, and it is pressed lightly so as not to separate from each other and heated to an appropriate temperature (S16).
  • FIG. 3 is a diagram showing the solar cell module in a state where the wiring members 25 and 27 are arranged on the connection electrodes 20 and 23 via the adhesives 24 and 26, and FIG. (B) is a side view.
  • FIG. 3A shows the distinction between the end portion and the central portion of the wiring member 25, details of which will be described later.
  • the wiring members 25 and 27 are thin plates made of a metal conductive material such as copper. Instead of a thin plate, a stranded wire can be used. As the conductive material, in addition to copper, silver, aluminum, nickel, tin, gold, or an alloy thereof can be used.
  • the wiring member 25 is preferably arranged so as to cover the connection electrode 20 along the arrangement direction of the connection electrode 20 on the light receiving surface side of the solar cell 10, and the width of the wiring member 25 is set to be the connection electrode 20. It is better to set it to be the same as or slightly thicker. Similarly, the width of the wiring member 27 on the back surface side may be set to be the same as or slightly thicker than the width of the connection electrode 23 on the back surface side.
  • the adhesive 24 is disposed between the connection electrode 20 and the wiring member 25 on the light receiving surface side, electrically connects the connection electrode 20 and the wiring member 25, and the light receiving surface side of the solar cell 10 and the wiring member. 25 is used for mechanically fixing.
  • the adhesive 26 is disposed between the connection electrode 23 on the back surface side and the wiring material 27, electrically connects the connection electrode 23 and the wiring material 27, and connects the back surface side of the solar cell 10 and the wiring. Used to mechanically fix the material 27.
  • thermosetting resin adhesives such as acrylic, highly flexible polyurethane, or epoxy can be used.
  • the curing temperature ⁇ H of the adhesives 24 and 26 is selected between about 130 ° C. and 300 ° C. from the heat resistance of the solar cell 10 and the like.
  • the adhesives 24 and 26 include conductive particles.
  • conductive particles nickel, silver, nickel with gold coating, copper with tin plating, or the like can be used.
  • insulating resin adhesives that do not contain conductive particles can also be used. In this case, one or both of the facing surfaces of the wiring members 25 and 27 or the connecting electrodes 20 and 23 are made uneven so that the wiring member 27 and the connecting electrode 20 are connected. Resin is appropriately removed from between the electrodes 23 to establish electrical connection.
  • the light receiving surface side is bonded by an adhesive force between the facing surfaces of the wiring member 25 and the connection electrode 20 and an adhesive force by a resin fillet formed on the light receiving surface of the solar cell 10 and the side surface of the wiring member 25.
  • adhesion is caused by the adhesive force between the facing surfaces of the wiring member 27 and the connection electrode 23 and the adhesive force by the resin fillet formed on the light receiving surface of the solar cell 10 and the side surface of the wiring member 27. Is done.
  • the crimping process is a process of pressing the crimping tool against the solar cell 10 on which the wiring members 25 and 27 are arranged with a predetermined pressure and heating the adhesives 24 and 26 to a predetermined temperature to be cured (S17).
  • FIG. 4 is a diagram illustrating a state in which a crimping process is performed using a crimping tool.
  • the crimping tool includes a lower tool 30 and an upper tool 31 that moves up and down relatively with respect to the lower tool 30.
  • the upper tool 31 is lowered with respect to the lower tool 30 and is disposed between the lower tool 30 and the upper tool 31.
  • This is a device for applying a predetermined pressure P to the temporarily fixed solar cell.
  • the heating parts 32 and 33 are arrange
  • a resistance wire heater, a heating lamp, a heating air supply device, or the like can be used.
  • the crimping tool is a pressure heating device.
  • the heating temperature in the crimping process is set to be equal to or higher than the curing temperature of the adhesives 24 and 26.
  • the heating temperature in the crimping process is set higher as the heating time determined by the cycle time of the crimping process is shorter. For example, when the heating time can be sufficiently long, the heating temperature in the pressure-bonding process can be set as the curing temperature, but when the heating time is several seconds, the temperature is higher than the curing temperature.
  • the pressure P is preferably 0.1 MPa to 0.2 MPa.
  • the remaining process for making a solar cell module is performed (S18).
  • the solar cell module subjected to the crimping process is positioned between the light-receiving surface side protection member and the back-surface side protection member, and the filler is provided between the light-receiving surface-side protection member and the back surface-side protection member.
  • Place. Frames are arranged at the ends of the light receiving surface side protective member and the back surface side protective member.
  • a transparent plate or film is used as the protective member on the light receiving surface side.
  • a translucent member such as a glass plate, a resin plate, or a resin film can be used.
  • the protective member on the back surface side the same protective member as that on the light receiving surface side can be used.
  • an opaque plate or film can be used as the protective member on the back side.
  • a laminated film such as a resin film having an aluminum foil inside can be used.
  • EVA, EEA, PVB, silicone resin, urethane resin, acrylic resin, epoxy resin, or the like can be used.
  • connection electrode in which the conductive particles are fused to each other by heating to form a network structure
  • the solar cell module is manufactured by connecting and arranging the wiring material to the solar cell.
  • the network structure in the connection electrode is such that the conductive particles are fused to each other, so that the higher the fusion rate M of the conductive particles, the higher the conductivity.
  • the higher the fusion rate M the stronger the bonding force between the conductive particles, the stress generated between the connection electrode and the solar cell, and the stress generated between the connection electrode and the wiring material. Becomes larger. If the stress generated by this fusion becomes excessive, peeling may occur at the interface between the connection electrode and the solar cell or at the interface between the connection electrode and the wiring member. Therefore, it is necessary to appropriately control the fusion rate M in order to balance the stress generated by the improvement of conductivity and the fusion.
  • connection electrodes 20 and 23 the control of the fusion rate M of the conductive particles in the connection electrodes 20 and 23 will be described in detail with reference to FIG.
  • control is performed so that the fusion rate at the end of the solar cell is lower than the fusion rate at the center of the solar cell.
  • the fusion rate M in the central portion of the solar cell, it is preferable to secure 50% or more as the fusion rate M in order to improve the electrical conductivity.
  • the fusion rate M is made lower than that in the central portion in order to suppress delamination.
  • the fusion rate M should not be 50% or less. It is good.
  • the fusion rate M may be 50% or less, although it is not included in the network structure.
  • a peel test was performed using the solar cell 10 in which the connection electrode 20 was formed on the transparent conductive film 12.
  • the solar cell 10 having the connection electrode 20 having a fusion rate M of 50% or more at the center and a lower fusion rate M than that of the center at the end was used.
  • the peeling test was performed by applying a constant force in the vertical direction to the connecting electrode 20 and moving the cutter in the horizontal direction with respect to the connecting electrode 20 in that state.
  • the peeling mode of the connection electrode 20 is different between the central portion and the end portion. That is, the connection electrode 20 was peeled from the transparent conductive film 20 at the center.
  • the connection electrode 20 was agglomerated and peeled inside.
  • the end of the solar cell will be described. Although the positional relationship between the end portion and the center portion is shown in FIG. 3, the end portion is a region on the end face side of the solar cell 10 in the longitudinal direction of the wiring members 25 and 27.
  • the end region can be determined in consideration of the contribution of the photogenerated carriers of the solar cell 10 to the current collection. For example, with respect to the total number of finger electrodes, a region having a predetermined number counted from the end face of the solar cell 10 can be set as the end. Or it can be set as the area
  • One control for making the fusion rate at the end of the solar cell lower than the fusion rate at the center of the solar cell is the heating temperature for forming the connection electrode 20 described in S13 and S14 of FIG. This is to make ⁇ different between the end and the center.
  • the heating temperature ⁇ is set to a low temperature compared to the center portion at the end portion. It is preferable that the temperature change between the end portion and the center portion be continuously reduced from the center portion toward the end portion.
  • the degree of continuously lowering the temperature is preferably determined experimentally while observing the decrease in the fusion rate M. Depending on the experimental result, for example, the temperature may be decreased linearly toward the end portion or may be decreased in a curved manner.
  • FIG. 5 is a diagram showing this state.
  • the horizontal axis represents the solar cell position along the longitudinal direction of the wiring member.
  • the heating temperature ⁇ is set.
  • An example of ⁇ 0 is about 200 ° C.
  • the temperature can be as low as about 150 ° C.
  • the fusion rate at the end of the solar cell is made lower than the fusion rate at the center.
  • a method of varying the solvent evaporation rate V described in S13 of FIG. 1 between the end portion and the center portion can be used.
  • the solvent transpiration rate V is set to be lower than that at the center portion.
  • the change in the solvent transpiration rate V between the end portion and the center portion is preferably continuously reduced from the center portion toward the end portion.
  • the degree of continuous low speed is preferably determined experimentally while observing the decrease in the fusion rate M.
  • the solvent transpiration rate V may be decreased linearly or curvedly toward the end.
  • FIG. 6 is a diagram showing this state.
  • the horizontal axis is the solar cell position along the longitudinal direction of the wiring material, and the vertical axis is the solvent evaporation rate V.
  • the solvent evaporation rate V is set.
  • FIG. 7 is a diagram showing an example in which the solvent evaporation rate V is lowered at the end portions of the connection electrodes 20 and 23 by using a jig 34 that covers the end portions of the connection electrodes 20 and 23 and exposes the central portion. is there.
  • a white arrow 35 indicates a heating atmosphere or a ventilation atmosphere.
  • the jig 34 does not cover a central portion of the connection electrode 20 and 23, the central portion has a high heating temperature, ventilation becomes sufficient, the solvent evaporation rate V high V 0. Since the ends of the connection electrodes 20 and 23 are covered with the jig 34, the heating from the heating atmosphere is hindered, the heating temperature is lowered, and the ventilation is weak compared to the appropriate state. Since, the solvent evaporation rate V becomes gradually smaller than V 0 toward the end face side. In this way, the solvent evaporation rate V can be controlled in accordance with the solar cell position.
  • the heating rate d ⁇ for forming the connection electrode described in S14 of FIG. 1 is made different between the end portion and the center portion.
  • the heating rate d ⁇ is set to a low value compared to the center portion at the end portion. It is preferable that the change in the heating rate d ⁇ between the end portion and the center portion is continuously decreased from the center portion toward the end portion.
  • the degree of continuous lowering is preferably determined experimentally while observing the decrease in the fusion rate M. Depending on the experimental result, for example, the heating rate d ⁇ may be decreased linearly or curvedly toward the end.
  • FIG. 8 shows the state.
  • the horizontal axis is the solar cell position along the longitudinal direction of the wiring material, and the vertical axis is the heating rate d ⁇ .
  • the flake mixing ratio FR described in S11 of FIG. 1 is made different between the end portion and the center portion.
  • the flake mixing ratio FR is set to a high value as compared with the center portion.
  • the change in the flake mixing ratio FR between the end portion and the center portion is preferably continuously increased from the center portion toward the end portion.
  • the degree of continuous increase is preferably determined experimentally while observing the decrease in the fusion rate M.
  • the flake mixing ratio FR may be increased linearly toward the end or may be increased in a curved manner.
  • FIG. 9 shows the state.
  • the horizontal axis is the solar cell position along the longitudinal direction of the wiring material, and the vertical axis is the flake mixing ratio FR.
  • the flake mixing ratio FR is set.
  • the flakes 22 have an action of dividing the network structure, the flakes 22 have a function of relieving stress caused by fusion.
  • FIG. 10 is a cross-sectional view of the solar cell along the longitudinal direction of the connection electrodes 20 and 23.
  • the difference in the flake mixing ratio FR is shown by the difference in the number per unit area of the flakes 22 in the cross-sectional views of the connection electrodes 20 and 23 which are melt-aggregated.
  • the number per unit area of the flakes 22 in the end cross-sectional view is larger than the number per unit area of the flakes 22 in the central cross-sectional view.
  • the flake mixing ratio FR In order to make the flake mixing ratio FR different between the end portion and the central portion of the solar cell, at least two conductive pastes having a standard flake mixing ratio FR and a conductive paste having a flake mixing ratio FR higher than the standard are used as the conductive paste. Prepare the type in advance. Then, a conductive paste having a standard flake mixing ratio FR is applied to the central portion, and a conductive paste having a flake mixing ratio FR higher than the standard is applied to the end portion. In this way, the flake mixture ratio FR can be controlled according to the solar cell position.

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Abstract

Selon la présente invention, dans la procédure de ce procédé permettant de produire un module de cellule solaire, une unité de conversion photoélectrique est formée (S10), une pâte résultant du mélange d'une poudre sphérique et de flocons dans un solvant est préparée (S11), la pâte est appliquée à l'unité de conversion photoélectrique (S12), le solvant est chauffé tout en étant amené à vaporiser (S13), en parallèle à ceci, on provoque la fusion des particules conductrices les unes aux autres afin de former un réseau (S14), une électrode de raccordement est formée (S15), un matériau de câblage est disposé au niveau de l'électrode de raccordement, un adhésif étant agencé entre ces derniers (S16) et le résultat est pressé avec une force de compression et chauffé à une température prédéterminée (S17). Ensuite, les procédés restants pour donner un module de cellule solaire sont effectués (S18). La vitesse de fusion des particules conductrices qui forment le réseau, est régulée par la température de chauffage pour former l'électrode de raccordement, la vitesse de vaporisation et la vitesse de chauffage du solvant et la proportion des ingrédients des flocons.
PCT/JP2012/069387 2012-07-31 2012-07-31 Procédé permettant de produire une cellule solaire et cellule solaire WO2014020672A1 (fr)

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PCT/JP2012/069387 WO2014020672A1 (fr) 2012-07-31 2012-07-31 Procédé permettant de produire une cellule solaire et cellule solaire
JP2014527845A JP5934984B2 (ja) 2012-07-31 2012-07-31 太陽電池の製造方法及び太陽電池

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010857A (ja) * 2006-05-30 2008-01-17 Kyocera Corp 太陽電池モジュール
WO2009090915A1 (fr) * 2008-01-17 2009-07-23 Nichia Corporation Procédé de production d'un matériau conducteur, matériau conducteur obtenu grâce au procédé, dispositif électronique contenant le matériau conducteur, dispositif électroluminescent, et procédé de fabrication d'un dispositif électroluminescent

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010857A (ja) * 2006-05-30 2008-01-17 Kyocera Corp 太陽電池モジュール
WO2009090915A1 (fr) * 2008-01-17 2009-07-23 Nichia Corporation Procédé de production d'un matériau conducteur, matériau conducteur obtenu grâce au procédé, dispositif électronique contenant le matériau conducteur, dispositif électroluminescent, et procédé de fabrication d'un dispositif électroluminescent

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