WO2014014161A1

WO2014014161A1 - Heat transfer structure using binder for bonding reaction-bonded silicon carbide sintered body, and method for manufacturing same

Info

Publication number: WO2014014161A1
Application number: PCT/KR2012/008448
Authority: WO
Inventors: 황성식; 손녕경
Original assignee: 에스케이씨솔믹스 주식회사
Priority date: 2012-07-20
Filing date: 2012-10-17
Publication date: 2014-01-23
Also published as: KR20140012383A

Abstract

The present invention relates to a heat transfer structure using a binder for bonding a reaction-bonded silicon carbide sintered body, and to a method for manufacturing same, which can prevent a bonded part from being damaged during the production or operation of the heat transfer structure, and can reduce molding and processing time while maintaining the physical properties of the reaction-bonded silicon carbide sintered body. In the structure and the method according to the present invention, bonding is achieved by using a silicon solid solution, i.e. a Si_1-xR_x (R: solute, X: atomic weight ratio) binder, which is a medium through which high-temperature heat and low-temperature heat is exchanged and by means of which a plurality of single components consisting of RBSC sintered bodies are bonded, and then sintering.

Description

Heat transfer structure using the binder for reaction sintered silicon carbide sintered body and its manufacturing method

The present invention relates to a heat transfer structure and a method for manufacturing the same, and more particularly, heat transfer is required, such as a heat sink, a heat exchanger, and the like, manufactured using a bonding agent for bonding a sintered Reaction Bonded Silicon Carbide (RBSC). It relates to a heat transfer structure and a manufacturing method thereof.

Heat transfer refers to the transfer of heat and generally refers to three types of heat transfer, convection, and heat radiation between objects, but in a narrow sense, heat transfer is a phenomenon in which heat is transferred between a fluid and a solid surface. This heat transfer is widely used as a structure such as a heat radiator for radiating heat to the outside, a heat exchanger for energy saving. By the way, the structure using heat transfer requires high temperature heat processing in many cases, and is operating in high temperature environment.

On the other hand, the silicon carbide sintered body is usually produced by the reaction sintering method, the silicon carbide sintered body thus produced is called reaction sintered silicon carbide (RBSC). RBSC has good thermal conductivity, corrosion resistance, chemical resistance and low coefficient of thermal expansion, and is suitable as a material used in high temperature region because it is less likely to be damaged even after long-term use. Accordingly, RBSC is in the spotlight as a material suitable for heat transfer structures that transmit heat such as radiators and heat exchangers. However, since RBSC has a high strength, it takes a lot of time to shape and process the heat transfer structure, so that it is required to shorten the processing time while maintaining the high temperature characteristics of the RBSC.

Recently, the RBSC heat transfer structure is not molded as a whole, but a method of joining and manufacturing a single component constituting the structure with a bonding agent for ceramic bonding has been proposed. Meanwhile, the conventional bonding agent for ceramic bonding includes sodium silicate, silica, alumina, zirconium oxide, and the like. The structure is prepared by attaching the single product in the form of ultrafine particles or slurry of these materials and then heating and joining in vacuum. have.

On the other hand, it is necessary for the bonding agent to maintain sufficient bonding strength. That is, the joints should not be damaged by mechanical shocks, residual stresses caused by thermal environmental changes, thermal shocks due to high temperatures, etc., which may be received during the manufacture or operation of the heat transfer structure. Specifically, in order to bond the RBSC heat transfer structure, after the bonding agent is applied between the components of the structure, heat treatment is necessary at a temperature of about 800 ° C. or more in order to bond the components and the bonding agent. By the way, the conventional binder is difficult to perform the heat treatment at a temperature of about 800 ℃ or more.

In addition, the silica series, which is mainly used as a conventional bonding material, has a short lifespan in a high temperature process of about 800 ° C. or higher, and thus it is almost impossible to manufacture a heat transfer structure using the same. Because the RBSC heat transfer structure is mainly used in high temperature environment of about 800 ° C. or higher for low temperature and about 1100 ° C. or higher for high temperature, the binder composition changes with time if the conventional binder is used for a long time at the above temperature. And a large stress concentration occurs at the joint. This stress concentration causes cracks in the joints.

The problem to be solved by the present invention is the reaction sintered silicon carbide which can shorten the time for forming and processing, while maintaining the physical properties of the reaction-sintered silicon carbide sintered body without damaging the bonded portion in the process of manufacturing or operating the heat transfer structure A heat transfer structure using a bonding agent for sintered body bonding and a method of manufacturing the same are provided.

The heat transfer structure using the binder for the reaction sintered silicon carbide sintered body bonding of the present invention for solving the above problems is a Si _1-x R _x (R; X; is an atomic weight ratio) binder, wherein the unit is a medium in which heat of high and low temperatures is exchanged with each other. In this case, the heat transfer structure may be a radiator or a heat exchanger.

In the structure of the present invention, the solid solution of the Si _1-x R _x (R; is a solid solution; x is atomic weight ratio) of the silicon solid solution is maintained in the liquid phase with the silicon in the region rich in silicon, melting point It may be a material that is 800 ℃ or more. Here, the solid solution material may be at least one selected from aluminum, titanium, iron, magnesium, copper and germanium.

In the atomic weight ratio (x) of the solid solution of the present invention, the aluminum is 10 to 70 at%, the titanium is 14 to 18 at%, the iron is 11 to 25 at%, the magnesium is 8 to 45 at%, The copper may be 13 to 62 at% and the germanium may be 10 to 90 at%.

In order to solve the above problems, a method of manufacturing a heat transfer structure using a binder for bonding a reaction sintered silicon carbide sintered body according to the present invention first prepares a plurality of RBSC units which are mediators in which heat of high temperature and low temperature are exchanged with each other. Thereafter, the unit is joined with a Si _1-x R _x (R; silver solid solution; x is atomic weight ratio) binder, which is a silicon solid solution. By sintering the units joined by the bonding agent to produce a heat transfer structure in which high and low temperature heat is exchanged with each other. In this case, the heat transfer structure may be a radiator or a heat exchanger.

In the method of the present invention, the solid solution of the Si _1-x R _x (R; is a solid solution; x is atomic weight ratio) of the silicon solid solution maintains the liquid phase with the silicon in the region rich in silicon, melting point In the atomic weight ratio (x) of the solid solution of the present invention, which forms a solid solution of 800 ° C. or more, the aluminum is 10 to 70 at%, the titanium is 14 to 18 at%, the iron is 11 to 25 at%, and the magnesium 8 to 45 at% silver, 13 to 62 at% copper and 10 to 90 at% germanium. The Si _1-x R _x (R; silver solid solution; x is atomic weight ratio) binder containing the solid solution having a lower melting point than the silicon is first sintered at a temperature higher than the melting point of the solid solution, Secondary sintering can be carried out at a higher temperature than the primary sintering. Specifically, the solid solution is first sintered to coat the outside of the silicon, and the second solid solution reacts with the silicon through the second sintering Si _1-x R _x (R; is a solid solution; x is Atomic weight ratio) binders can be achieved.

The heat transfer structure in the manufacturing method of the present invention is heated to 900 ℃ for 3 minutes, maintained for 10 minutes and then repeated 15 times the thermal shock cycle (cycle) to lower for 5 minutes to 200 ℃ measured the measured strength of thermal shock Preferably less than 10 MPa, more preferably less than 5 MPa compared to before adding.

According to the heat transfer structure using the bonding agent for bonding the RBSC sintered compact according to the present invention and a method for manufacturing the same, a heat transfer structure is manufactured by manufacturing a heat transfer structure by joining a single component of the RBSC sintered compact with a bonding agent composed of a solid solution of silicon. In the process, the bonding part is not damaged and the time for forming and processing can be shortened while maintaining the physical properties of the RBSC sintered body.

1 is a cross-sectional view showing a radiator according to the present invention.

2 is a perspective view showing a heat exchanger according to the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

Embodiment of the present invention by bonding a single piece consisting of a reaction bonded silicon carbide (RBSC) sintered body with a bonding agent made of a solid solution of silicon to produce a heat transfer structure, the joint portion in the process of manufacturing or operating the heat transfer structure The present invention provides a heat transfer structure using a bonding agent for bonding RBSC sintered compacts and a method of manufacturing the same, which can shorten the time for forming and processing while maintaining the physical properties of the RBSC sintered compact without causing damage. Here, the heat transfer structure refers to the exchange of heat between the fluid and the solid surface, the embodiment of the present invention proposes a heat sink and a heat exchanger as a heat transfer structure. At this time, since the embodiment of the present invention solves the problem of the conventional heat transfer structure, the present invention limits its application to the heat transfer structure.

RBSC sintered body has a structure in which silicon (Si) is melted and impregnated into a porous network structure made of silicon carbide, and a part of the silicon is again carbonized to become silicon carbide, and the remainder is silicon. Used in Accordingly, the bonding agent for bonding the RBSC sintered body can be bonded at a temperature at which silicon remaining in the RBSC does not elute, and the bonding agent must maintain stability at a high temperature. In addition, the binder should be melted and easily impregnated with RBSC, and the coefficient of thermal expansion between the binder and RBSC should be similar.

In an embodiment of the present invention, a silicon solid solution Si _1-x R _x (R; is a solid solution; x is an atomic weight ratio) as a binder for bonding RBSC sintered bodies satisfying the above conditions. Specifically, the solid solution (R) has a crystal structure such as silicon, has a similar atomic radius, a similar electronegativity, and a similar electrical appliance. Among them, a material capable of maintaining a liquid phase with silicon and stably synthesizing with silicon is particularly preferable in a silicon-rich region on the state diagram. The solid solution (R) that satisfies all of these conditions may include at least one selected from aluminum (Al), titanium (Ti), iron (Fe), magnesium (Mg), copper (Cu), and germanium (Ge). .

Accordingly, the atomic weight ratio (x) of Si _1-x R _x is such that the solid solution (R) is made of aluminum because the RBSC sintered body to which the bonding is made must satisfy the above conditions in an environment of high temperature, for example, about 800 ° C. or higher. X is 10 to 70 at%, titanium is 14 to 18 at%, iron is 11 to 25 at%, magnesium is 8 to 45 at%, copper is 13 to 62 at% and germanium is 10 to 90 at% Is preferred. Si _1-x R _{x according} to the present invention that satisfies the atomic weight ratio (x) has a melting point of at least 800 ° C. or higher, and therefore can be easily applied to the high temperature environment sought in the present invention.

The binder may be prepared by mixing the silicon and the solid solution (R) in powder form, respectively, and may be preferably mixed by ball milling, and the mixing may include two powders having an average particle diameter of about 50 μm. Can be mixed via ball milling for approximately 6 hours. The powder mixed in this way may be used as the binder by the sintered body itself by the sintering process, or may be used as a binder in the form of powder obtained by grinding the sintered body. Of course, the pressing powder may be selectively pressed on the powder mixed before the sintering process. It is also possible to use a powdered binder in the form of a slurry mixed with a solvent (preferably an organic solvent which can act as a carbon source).

In this case, the binder may be prepared by a conventional one-step sintering process (also called a single sintering process). However, if the melting point of the solid solution (R) is lower than silicon can be made in two steps. That is, first, the solid solution (R) is applied to the silicon, the first sintering at a temperature slightly higher than the melting point of the solid solution to melt the solid solution (R), the solid solution (R) diffuses around the silicon powder In this way, the solid solution R easily diffuses into the silicon. Thereafter, the secondary sintering proceeds at a temperature higher than the primary sintering temperature to complete the bonding agent. In order to manufacture the heat transfer structure according to the embodiment of the present invention using the binder, the Si _1-x R _x binder is injected into the bonding surface of the RBSC unit, and then manufactured by sintering it.

Table 1 shows a process for preparing a silicon solid solution binder applied to the heat transfer structure according to the embodiment of the present invention according to the lower limit atomic ratio (at%) and the upper limit atomic ratio (at%) of the solid solution (R). And the temperature of the process (bonding process) of joining a heat transfer structure using the said bonding agent.

Table 1

Solid substance	Process name	Lower limit		maximum
		at%	Temperature range (℃)	at%	Temperature range (℃)
aluminum	Binder manufacturing	10	600-1300	70	600-810
	Bonding process		1350-1400		800-1400
titanium	Binder manufacturing		14	1000-1200	18	1000-1300
	Bonding process	1350-1400		1350-1400
iron	Binder manufacturing	11	900-1300	25	900-1200
	Bonding process		1350-1400		1220-1400
magnesium	Binder manufacturing	8	900-1300	45	900-1000
	Bonding process		1350-1400		1050-1400
Copper	Binder manufacturing	13	810-1300	62	700-900
	Bonding process		1350-1400		950-1400
germanium	Binder manufacturing		10	1000-1300	90	900-950
	Bonding process	1350-1400		1050-1400

According to Table 1, the heat transfer structure produced by the bonding agent of the present invention is produced through heat treatment at a temperature of about 80 ℃ to 1400 ℃. Accordingly, the bonding agent according to the embodiment of the present invention maintains stability at the heat treatment temperature performed to manufacture the heat transfer structure, and can be bonded at a temperature at which silicon remaining in the RBSC does not elute. That is, since the binder of the present invention has a lower melting point than that of the RBSC sintered body, which is a joined object, silicon is not eluted from the RBSC sintered body. In addition, since the binder of the present invention contains a liquid phase, it is easy to impregnate the RBSC sintered body, and the thermal expansion coefficient of the binder and the RBSC sintered body is similar because it is a solid solution of silicon forming the RBSC sintered body.

The heat transfer structure using the binder for the reaction sintered silicon carbide sintered body bonding of the present invention can be applied to all structures made of a method of exchanging heat between high and low temperatures by exchanging heat. Among them, in particular, the radiator and the heat exchanger operate in such a manner that the heat of the high temperature and the low temperature exchange with each other, and when used for a long time, the binder composition should not cause a change over time. Hereinafter, the radiator and heat exchanger made of the RBSC sintered body to which the binder of the present invention is applied will be described. In order to confirm the high temperature characteristics of the radiator and heat exchanger of the present invention, in the experimental example of the present invention, the high temperature characteristics of the conventional silica binder and the silicon solid solution binder of the present invention were compared through thermal shock strength.

1 is a cross-sectional view showing a radiator according to an embodiment of the present invention. Since only one example of a radiator is presented here, all of the radiators manufactured using the Si _1-x R _x binder in the scope of the present invention, that is, the RBSC sintered body, will be applied. At this time, the radiator refers to a device for dissipating heat by radiation, convection, etc. by receiving steam or hot water.

Referring to FIG. 1, the radiator 100 of the present invention is attached to a heat-radiating body 10 for radiating heat, for example, a deposition apparatus, and in some cases, may be a dummy wafer of the deposition apparatus. The radiator 100 includes a heat sink 16, which is a main body of heat transfer, and a supporting rod 12 supporting the heat sink 16. The heat dissipation plate 16 is preferably in the form of a disc, is made of an RBSC sintered body, and is spaced apart from each other at regular intervals. The support rod 12 is made of an RBSC sintered body and passes through a plurality of holes in the heat dissipation plate 16 to connect with the support 14 and the heat-radiating body 10. At this time, the heat sink 16 is fixed to the support rod 12 by the Si _1-x R _x bonding agent 18 of the present invention, it may be formed in the junction of the support rod 12 to increase the adhesive force. As described above, the heat sink 100 is manufactured by fixing the heat sink 16 to the support rod 12 by the Si _1-x R _x bonding agent 18, thereby shortening the time for forming and processing.

Thermal shock strength was confirmed by measuring the normal three-point bending strength at room temperature before and after the thermal shock. Here, the bending strength refers to the maximum tensile stress at the time of breakdown, and the breakage of the radiator made of ceramic occurs at the point where the tensile stress is dominant. Thermal shock was raised to 900 ℃ for 3 minutes using a Rapid Thermal Annealing (RTA) equipment, and then maintained for 10 minutes, and then 15 times to lower the temperature in 5 minutes to 200 ℃.

Table 2 compares the bending strengths of the radiator according to the present invention and the conventional radiator. At this time, Experimental Example 1 was prepared by mixing after mixing Si: Ge in the ratio of 71:29 at% to the RBSC sintered body as a radiator of the present invention, using a binder, Comparative Experimental Example 1 is commercialized to RBSC sintered body as a conventional radiator Silica binder was used. Si: Ge was prepared here at 71:29 at%. Since the bonding material was suitable for the radiator, it was selected to confirm the properties of the bonding agent of the present invention. In the present invention, after coating the individual parts using the synthesized binder, heat treatment was performed at 1350 ° C. for 1.5 hours to bond the single parts, but the conventional commercial silica-based binders have low resistance to heat and thus lower temperatures. Heat treatment was carried out at phosphorus 900 ~ 1000 ℃ to join a single product.

TABLE 2

division	Bending strength before thermal shock	Bending strength after thermal shock
Experimental Example 1	250 ± 12 MPa	246 ± 16 MPa
Comparative Example 1	63 ± 9 MPa	47 ± 11 MPa

According to Table 2, Experimental Example 1 and Comparative Example 1 of the present invention showed a significant difference in the bending strength before the thermal shock. This means that even before thermal shock, the heat radiator of the present invention using a binder composed of Si: Ge of 71:29 at% has a much higher mechanical strength than a conventional heat radiator using a silica binder. In other words, it was found that the radiator to which the SiGe bonding agent of the present invention is applied has a stronger bonding force. Accordingly, it was found that the radiator using the SiGe bonding agent of the present invention is more suitable as a heat transfer structure than the conventional radiator.

After the thermal shock was applied, the radiator of the present invention had a bending strength lowered to about 4 MPa, while the conventional radiator dropped by about 16 MPa. That is, the heat radiator of the present invention is suitable for use at high temperatures due to its high resistance to thermal shock, but a conventional heat radiator may be easily broken by thermal shock when used at high temperatures. Accordingly, it was confirmed that the radiator of the present invention maintains the physical properties of the RBSC sintered body without damaging the bonding portion in the process of manufacturing or operating the radiator.

2 is a perspective view showing a heat exchanger according to an embodiment of the present invention. Since only one example of a heat exchanger is presented here, all of the heat exchangers fabricated using the Si _1-x R _x binder in the scope of the present invention, that is, the RBSC sintered body will be applied. At this time, the heat exchanger refers to a device that performs heat transfer between the low temperature fluid and the high temperature fluid. For reference, since the metal heat exchanger has a use temperature of about 750 ° C. or lower and cannot be used in a corrosive gas atmosphere, a ceramic heat exchanger is preferable at a high temperature of about 800 ° C. or higher.

According to FIG. 2, the heat exchanger 200 of the present invention uses the Si _1-x R _x binder 54 of the present invention to provide

RBSC units

51 and 53 that provide passages through which fluid flows through partition walls. It is made by laminating them. The heat exchanger 200 is completed by finishing the one side of the

laminations

51 and 53 with the RBSC cover 50. The

single products

51 and 53 are laminated | stacked in the mutually staggered direction, respectively, and form the 1st channel | path 56 through which a 1st fluid flows, and the 2nd channel | channel 58 through which a 2nd fluid flows. Here, the first fluid may be a hot gas, and the second fluid may be air at room temperature. As described above, the heat exchanger 200 is manufactured by laminating the

single products

51 and 53 with the Si _1-x R _x bonding agent 54, whereby the time for forming and processing can be shortened.

Table 3 compares the bending strength of the heat exchanger according to the present invention and the conventional heat exchanger. At this time, Experimental Example 2 used a SiGe binder in the RBSC sintered body as the heat exchanger of the present invention, Comparative Example 2 used silica in the RBSC sintered body as a conventional heat exchanger. At this time, the bending strength was measured in the same manner as in Table 2.

TABLE 3

division	Bending strength before thermal shock	Bending strength after thermal shock
Experimental Example 2	262 ± 15 MPa	258 ± 8 MPa
Comparative Experiment 2	62 ± 8 MPa	44 ± 13 MPa

According to Table 3, Experimental Example 2 of the present invention and the conventional Comparative Experimental Example 2 showed a significant difference in bending strength in the bending strength before the thermal shock. This means that even before thermal shock, the heat exchanger of the present invention using SiGe binder has a much higher mechanical strength than the conventional heat exchanger with silica binder. In other words, it was found that the heat exchanger to which the SiGe binder of the present invention is applied has a more firm bonding force. Accordingly, it was found that the heat exchanger using the SiGe bonding agent of the present invention is more suitable as a heat transfer structure than the conventional heat exchanger.

After the thermal shock was applied, the heat exchanger of the present invention was reduced in bending strength by about 4 MPa, while the conventional radiator was dropped by about 18 MPa. That is, the heat exchanger of the present invention is suitable for use at high temperatures because of its high resistance to thermal shock, but the conventional heat exchanger can be easily broken by thermal shock when used at high temperatures. Accordingly, it was confirmed that the heat exchanger of the present invention maintains the physical properties of the RBSC sintered body without damaging the bonded portion in the process of manufacturing or operating the same.

Specifically, the conventional radiator and the heat exchanger have a bending strength of about 16 MPa and 18 MPa, respectively, in the thermal shock test. It is apparent that such a decrease in bending strength cannot be used for a long time in a high temperature environment of a conventional radiator and heat exchanger. Therefore, if the bending strength is less than 10 MPa in the thermal shock test conditions, it can be used as a radiator and heat exchanger, preferably 7MPa, more preferably 5MPa. The radiator and heat exchanger of the present invention satisfies the above conditions because the bending strength fluctuates by about 4 MPa.

When used for a long time, the radiator and the heat exchanger should not cause a change in the binder composition over time. By the way, as mentioned above, the binder proposed in the present invention is the optimal binder that satisfies this. Therefore, when the said radiator and heat exchanger are manufactured using the binder of this invention, it can operate stably at high temperature. This is because the conventional radiator and heat exchanger did not solve the problem of cracking when used for a long time, but because the problem of cracking during the operation of the radiator and heat exchanger made of RBSC sintered body by the bonding agent of the present invention has been solved.

As mentioned above, although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. It is possible.

[Description of the code]

100; Radiator 10; Heating element

12; RBSC support rod 14; support fixture

16; RBSC heat sink 18; Si _1-x R _x binder

200; Heat exchanger 50; cover

51, 53; Single item 54; Si _1-x R _x binder

56; First fluid passage 58; Second fluid passage

Claims

It consists of a plurality of single parts made of a RBSC sintered body and a Si 1-x R x (R; is a solid solution; x is an atomic weight ratio) binder, which is a silicon solid solution that binds the single parts, and the single parts exchange heat between high and low temperatures. A heat transfer structure using a binder for reaction sintered silicon carbide sintered body bonding, which is a medium to be used.
The heat transfer structure according to claim 1, wherein the heat transfer structure is a radiator.
The heat transfer structure using a bonding agent for joining reaction-sintered silicon carbide sintered compact according to claim 1, wherein the heat transfer structure is a heat exchanger.
The solid solution of the Si 1-x R x (R; silver solid solution; x is atomic weight ratio) binder of the silicon solid solution maintains a liquid phase with the silicon in a region rich in silicon, and has a melting point. A heat transfer structure using a binder for reaction sintered silicon carbide sintered body bonding, characterized in that the material is 800 ° C. or higher.
The heat transfer structure of claim 4, wherein the solid solution is at least one selected from aluminum, titanium, iron, magnesium, copper, and germanium.
The heat transfer structure according to claim 5, wherein the aluminum has a ratio (x) of 10 to 70 at% of the atomic weight.
6. The heat transfer structure according to claim 5, wherein the titanium has a ratio (x) of 14 to 18 at% of the atomic weight.
The heat transfer structure according to claim 5, wherein the iron has a ratio (x) of 11 to 25 at% of the atomic weight.
6. The heat transfer structure according to claim 5, wherein the magnesium has a ratio (x) of 8 to 45 at% of the atomic weight.
The heat transfer structure according to claim 5, wherein the copper has a ratio (x) of 13 to 62 at% of the atomic weight.
The heat transfer structure according to claim 5, wherein the germanium has a ratio (x) of 10 to 90 at% of the atomic weight.
Preparing a plurality of RBSC components, which are mediums for exchanging heat of high and low temperatures;

Bonding the unit with a Si 1-x R x (R; silver solid solution; x is atomic weight ratio) binder which is a silicon solid solution; And

A method of manufacturing a heat transfer structure using a binder for reacting sintered silicon carbide sintered body bonding, comprising the step of sintering the units joined by the bonding agent to produce a heat transfer structure in which high-temperature and low-temperature heat are exchanged with each other.
The method of claim 12, wherein the heat transfer structure is a radiator. 13.
The method of manufacturing a heat transfer structure using a binder for joining reaction-sintered silicon carbide sintered compacts according to claim 12, wherein the heat transfer structure is a heat exchanger.
The solid solution of the Si 1-x R x (R; silver solid solution; x is atomic weight ratio) binder of the silicon solid solution maintains a liquid phase with the silicon in a region rich in silicon, and has a melting point. A method of producing a heat transfer structure using a binder for bonding reaction sintered silicon carbide sintered compact, characterized in that the material is 800 ° C. or higher.
The method of claim 12, wherein the Si 1-x R x (R; silver solid solution; x is an atomic weight ratio) binder containing the solid solution having a lower melting point than the silicon is applied to the silicon and the solid solution is A method of manufacturing a heat transfer structure using a binder for bonding a sintered silicon carbide sintered compact, characterized in that the first sintering at a temperature higher than the melting point of the solid solution material and the second sintering at a temperature higher than the first sintering.
17. The method of claim 16, wherein the solid solution is one of aluminum, titanium, iron, magnesium, and copper.
The heat transfer structure of claim 12, wherein the heat transfer structure is heated to 900 ° C. for 3 minutes, maintained for 10 minutes, and then repeated 15 times in a thermal shock cycle for 5 minutes to 200 ° C., and then the measured bending strength is determined by thermal shock. A method for producing a heat transfer structure using a binder for joining reaction sintered silicon carbide sintered compact, characterized in that it is smaller than 10 MPa compared to before applying.
19. The method of claim 18, wherein the bending strength is less than 5 MPa compared to before the thermal shock is applied.