WO2014012429A1 - Preparation method for cross-sectional morphology analysis sample of mems component - Google Patents
Preparation method for cross-sectional morphology analysis sample of mems component Download PDFInfo
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- WO2014012429A1 WO2014012429A1 PCT/CN2013/078582 CN2013078582W WO2014012429A1 WO 2014012429 A1 WO2014012429 A1 WO 2014012429A1 CN 2013078582 W CN2013078582 W CN 2013078582W WO 2014012429 A1 WO2014012429 A1 WO 2014012429A1
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- 238000002360 preparation method Methods 0.000 title abstract 2
- 239000000843 powder Substances 0.000 claims abstract description 28
- 229920003023 plastic Polymers 0.000 claims abstract description 27
- 238000005498 polishing Methods 0.000 claims abstract description 26
- 239000004033 plastic Substances 0.000 claims abstract description 16
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 19
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000002156 mixing Methods 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
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- 239000002985 plastic film Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
- G01N1/04—Devices for withdrawing samples in the solid state, e.g. by cutting
- G01N1/06—Devices for withdrawing samples in the solid state, e.g. by cutting providing a thin slice, e.g. microtome
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
Definitions
- the present invention relates to semiconductor devices, and more particularly to a method of fabricating a sample of a microelectromechanical system device profile analysis.
- One of the methods used by foundries to monitor the in-line process is to use a scanning electron microscope (SEM) to observe and measure the profile of a particular structure of the device.
- SEM scanning electron microscope
- the manufacturing methods of the SEM profile samples mainly include manual splitting, MC600 positioning splitting, polishing and focused ion beam (FIB) slicing. Since the process of the conventional integrated circuit is to fabricate the device on the silicon substrate and then connect the interconnection lines on the surface, it is a relatively complete and stable structure, so the above method can meet the requirements of the profile analysis.
- MEMS microelectromechanical systems
- SOI silicon-on-insulator
- a conventional solution is to deposit a protective film such as SiO 2 /SiN on the surface of the wafer by chemical vapor deposition (CVD) equipment, and then prepare a sample for profile analysis by using a cleavage method.
- CVD chemical vapor deposition
- the two preconditions must be met by using this method: 1.
- the crystal orientation of the village must be ⁇ 100>, otherwise the direction of the split is not perpendicular to the required monitoring pattern; 2.
- the intersection of the comb structure must be sufficient (ie, the hollow structure cannot pass More), it is possible to avoid deformation of the shape due to structural collapse when the splint is removed.
- FIG. 3 is a cross-sectional shape analysis sample formed by a conventional CVD deposition protective film method and formed by a non-floating comb-tooth structure MEMS device. Photographs under the microscope, you can see the comb structure even if the bottom is not corroded
- a method for manufacturing a profile analysis sample of a microelectromechanical system device comprises the following steps: slicing a sample to be analyzed to obtain a sample, the first side of a sample of the sample is close to a section to be observed; and the transparent plastic powder is dedicated The curing agent is adjusted into a paste and applied to the upper surface of the swatch; a transparent sheet is prepared, and the transparent sheet is flattened on one side of the swatch coated with the mushy plastic powder; Curing; polishing the first side of the swatch until it is ground to the cross section to be observed.
- the transparent plastic powder is an acrylic powder.
- the paste-like plastic powder to be cured is allowed to stand for 10 minutes.
- the first side of the swatch is polished until the step of grinding to the cross section to be observed is sequentially ground to the section to be observed by coarse to fine polishing sandpaper, and then passed The section to be observed is polished by a flannel or a polishing liquid.
- the polishing sandpaper has a coarsest roughness of 9 microns and a finest roughness of 0.1 microns.
- the polishing time for polishing the section to be observed by a fleece or a polishing liquid is 30 seconds.
- the transparent sheet is a glass sheet.
- the size of the transparent sheet is smeared with the swatch
- the one side of the powder is matched to completely cover the side of the sample coated with the paste plastic powder.
- FIG. 1 is a top plan view of a surface of a MEMS device having a suspended comb structure
- FIG. 2 is a schematic cross-sectional view of a MEMS device having a suspended comb structure
- FIG. 3 is a non-suspended comb structure MEMS The device is prepared by a conventional CVD deposition protective film method and the profile of the profile analysis sample formed after the split is under the microscope
- FIG. 4 is a flow chart of the method for manufacturing the sample of the microelectromechanical system device profile analysis
- Figure 5 is a top plan view of the upper surface of the sample in an embodiment
- Figure 6 is a schematic view showing a section of the sample of the MEMS device using a microelectromechanical system device for analyzing the sample to a section along the line A-A shown in Figure 5;
- Figure 7 is a photograph of a sample cross section prepared by the manufacturing method of the cross-sectional morphology analysis sample of the MEMS device of the present invention under optical display;
- Figure 8 is a photograph of a sample profile prepared by a method for producing a sample of a microelectromechanical system device of the present invention, which is produced by a scanning electron microscope.
- Figure 4 is a flow diagram of a method of fabricating a sample of a cross-sectional morphology analysis of a MEMS device in an embodiment, comprising the steps of:
- the sample to be analyzed is sliced to obtain a sample.
- the MEMS device sample to be analyzed is cut to a size suitable for polishing, such as a length multiplied by a sample having a width of 8 x 4 cm.
- a size suitable for polishing such as a length multiplied by a sample having a width of 8 x 4 cm.
- the section to be observed is close to one side of the swatch. This side is referred to as the first side in the present invention.
- the section taken along the line AA is the section to be observed, which is close to the first side 101 of the sample.
- the transparent plastic powder is adjusted into a paste with a special curing agent, and applied to the upper surface of the sample.
- the transparent plastic powder is quickly applied to the upper surface of the sample after being adjusted with a curing agent.
- the paste-like plastic powder fills the gap in the MEMS device and forms a thin layer on the upper surface of the sample.
- the clear plastic powder is an acrylic (polymethyl methacrylate, PMMA) powder.
- Acrylic materials are light transmissive and easy to cure. Epoxy resins or other transparent plastic materials which are more transparent may also be used in other embodiments.
- the transparent sheet is a glass sheet.
- a transparent plastic sheet or the like may be used instead.
- 6 is a cross-sectional view of a sample made by a method for fabricating a sample of a microelectromechanical system device for analyzing a sample of a profile of a microelectromechanical system, comprising a substrate 10, an oxide layer 20, a silicon-on-insulator (SOI) structure 30, and a glass sheet 40. And acrylic 50.
- the size of the glass flakes 40 should match the side of the swatch coated with the paste plastic powder, and the side of the swatch coated with the mushy plastic powder can be completely covered.
- the glass sheet 40 protects the surface of the sample and flattens it to transmit light better for subsequent microscopic viewing of the topography. It also allows the acrylic to be filled in the gaps in the device structure.
- the sample was left for 10 minutes to be cured by acrylic.
- the curing temperature is not critical, and it can be referred to the use instructions of the curing agent, and it can be generally carried out at room temperature.
- the method for manufacturing the profile analysis sample of the above MEMS device is prepared by using a transparent plastic powder and a curing agent to form a liquid (thin paste), which is smeared on the surface of the MEMS comb structure, and the paste is filled into the device structure. In the gap. Then, the transparent sheet is attached to the surface of the sample, and the plastic powder is completely cured, and then the sample is prepared by polishing. Since the gap is filled to enhance the strength of the structure, collapse of the suspended comb structure during polishing is avoided.
- the method is suitable for devices with arbitrary crystal orientation at the bottom of the village, and only requires a common polishing machine, which does not require expensive CVD equipment, and requires a small amount of consumables, which can save costs. Suitable for use in fault analysis laboratories.
- step S450 is followed by grinding from a coarse to fine polishing paper to the section to be observed, and further polishing the section to be observed by flannel or polishing liquid for about 30 seconds.
- the roughness (Ra) of the polished sandpaper was gradually reduced from 9 microns to 0.1 microns.
- the glass flakes 40 are partially abraded together during polishing.
- Fig. 7 and Fig. 8 are photographs of the sample profile prepared by the manufacturing method of the profile analysis of the microelectromechanical system device described above under the optical microscope and the scanning electron microscope, respectively.
- the invention is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.
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Abstract
The present invention relates to a preparation method for cross-sectional morphology analysis sample of a MEMS component, which comprises the following steps: slicing the sample to be analyzed to obtain a sample slice; mixing transparent plastic powder with special hardening agent to a paste, and coating the paste on upper surface of the sample slice; preparing a transparent sheet, and pressing the transparent sheet on the surface of the sample slice coated with the plastic powder paste; curing said paste; polishing a first side surface of the sample slice until sectional surface to be observed appears. Because gaps in the overhanging comb structure of the MEMS component are filled with transparent plastic material in the present invention, the strength of the structure is enhanced, and collapse of the overhanging comb structure is avoided. The present invention is applicable to components having arbitrarily-oriented substrates, requires no use of expensive CVD devices, and can save costs compared to conventional methods using CVD deposited protective films.
Description
一种 MEMS器件剖面形貌分析样品的制造方法 技术领域 Method for manufacturing MEMS device profile analysis sample
本发明涉及半导体器件，特别是涉及一种微机电系统器件剖面形 貌分析样品的制造方法。 The present invention relates to semiconductor devices, and more particularly to a method of fabricating a sample of a microelectromechanical system device profile analysis.
背景技术 Background technique
晶圓代工厂监控在线工艺的方法之一是利用扫描电子显微镜 ( SEM )观察并测量器件特定结构的剖面形貌。 而目前在晶圓代工厂 的故障分析（FA ) 实验室， 扫描电镜剖面形貌样品的制造方法主要 有手工裂片、 MC600定位裂片、 抛光及聚焦离子束（FIB )切片等方 法。因普通集成电路的制程都是在硅村底上制造器件然后在表面连接 互联线， 属于比较整体、 稳定的结构， 因此上述方法能满足剖面形貌 分析的要求。 One of the methods used by foundries to monitor the in-line process is to use a scanning electron microscope (SEM) to observe and measure the profile of a particular structure of the device. Currently, in the FAA laboratory of the foundry, the manufacturing methods of the SEM profile samples mainly include manual splitting, MC600 positioning splitting, polishing and focused ion beam (FIB) slicing. Since the process of the conventional integrated circuit is to fabricate the device on the silicon substrate and then connect the interconnection lines on the surface, it is a relatively complete and stable structure, so the above method can meet the requirements of the profile analysis.
但随着微机电系统（MEMS )器件的出现， 现有的剖面形貌分析 样品的制造方法已经不能满足要求。 例如， 某些 MEMS器件结构在 形成悬浮的梳齿结构， 如图 1、 图 2所示， 包括村底 10、 氧化层 20 以及绝缘体上硅（SOI ) 结构 30。 这种结构无法通过传统的裂片及 FIB切片实现。 而传统的抛光方法也会损坏此类悬浮结构。 However, with the advent of microelectromechanical systems (MEMS) devices, existing methods for fabricating cross-sectional morphology analysis samples are no longer sufficient. For example, some MEMS device structures are in the form of a suspended comb structure, as shown in Figures 1 and 2, including a substrate 10, an oxide layer 20, and a silicon-on-insulator (SOI) structure 30. This structure cannot be achieved with conventional splits and FIB slices. Traditional polishing methods can also damage such suspended structures.
目前一种传统的解决方案是利用化学气相淀积（ CVD )设备在圓 片表面淀积一层保护膜如 Si02/SiN等， 然后采用裂片的方法制备剖 面形貌分析样品。 但采用该方法必须满足两个前提条件： 1 , 村底晶 向必须是<100>, 否则裂片方向不与所需监控图形垂直； 2, 梳齿结构 交叉部分必须足够多 （即镂空结构不能过多）， 才可能避免裂片时因 结构坍塌导致形貌变形。 图 3是一种非悬空的梳齿结构 MEMS器件 采用传统 CVD淀积保护膜方法制备并裂片后形成的剖面形貌分析样
品在显微镜下的照片，可以看到即使对于底部未腐蚀镂空的梳齿结构At present, a conventional solution is to deposit a protective film such as SiO 2 /SiN on the surface of the wafer by chemical vapor deposition (CVD) equipment, and then prepare a sample for profile analysis by using a cleavage method. However, the two preconditions must be met by using this method: 1. The crystal orientation of the village must be <100>, otherwise the direction of the split is not perpendicular to the required monitoring pattern; 2. The intersection of the comb structure must be sufficient (ie, the hollow structure cannot pass More), it is possible to avoid deformation of the shape due to structural collapse when the splint is removed. 3 is a cross-sectional shape analysis sample formed by a conventional CVD deposition protective film method and formed by a non-floating comb-tooth structure MEMS device. Photographs under the microscope, you can see the comb structure even if the bottom is not corroded
MEMS 器件， 裂片时已经会存在结构变形现象， 则对于具悬浮的梳 齿结构的 MEMS器件，采用 CVD淀积保护膜的方案就更容易出现裂 片时结构坍塌的情况了。 另外， 该方法还存在成本较高的问题。 In MEMS devices, structural deformation has already occurred during cleavage. For MEMS devices with suspended comb structures, the CVD deposition of protective films is more prone to structural collapse during rupture. In addition, this method has a problem of high cost.
发明内容 Summary of the invention
基于此，有必要针对传统的 CVD淀积保护膜制备 MEMS器件的 剖面形貌分析样品方法成本高、 泛用性差的问题， 提供一种微机电系 统器件剖面形貌分析样品的制造方法。 Based on this, it is necessary to prepare a method for analyzing the profile of the MEMS device by using the conventional CVD deposition protective film to prepare a sample of the MEMS device, and to provide a method for manufacturing a sample of the micro-electromechanical system device.
一种微机电系统器件剖面形貌分析样品的制造方法，包括下列步 骤： 将待分析样品切片得到样片， 所述样片的一个样片的第一侧面靠 近待观察的剖面； 将透明的塑料粉用专用固化剂调成糊状， 并涂抹在 所述样片的上表面； 准备一透明片， 将所述透明片压平在所述样片涂 抹有糊状塑料粉的一面上； 待所述糊状塑料粉固化； 对所述样片的第 一侧面进行抛光， 直至磨至待观察的剖面。 A method for manufacturing a profile analysis sample of a microelectromechanical system device comprises the following steps: slicing a sample to be analyzed to obtain a sample, the first side of a sample of the sample is close to a section to be observed; and the transparent plastic powder is dedicated The curing agent is adjusted into a paste and applied to the upper surface of the swatch; a transparent sheet is prepared, and the transparent sheet is flattened on one side of the swatch coated with the mushy plastic powder; Curing; polishing the first side of the swatch until it is ground to the cross section to be observed.
在其中一个实施例中， 所述透明的塑料粉为亚克力粉。 In one embodiment, the transparent plastic powder is an acrylic powder.
在其中一个实施例中， 所述待所述糊状塑料粉固化是放置 10分 钟。 In one embodiment, the paste-like plastic powder to be cured is allowed to stand for 10 minutes.
在其中一个实施例中， 所述对所述样片的第一侧面进行抛光， 直 至磨至待观察的剖面的步骤是依次用由粗到细的抛光砂纸磨至所述 待观察的剖面， 再通过绒布或抛光液对所述待观察的剖面进行抛光。 In one embodiment, the first side of the swatch is polished until the step of grinding to the cross section to be observed is sequentially ground to the section to be observed by coarse to fine polishing sandpaper, and then passed The section to be observed is polished by a flannel or a polishing liquid.
在其中一个实施例中， 所述抛光砂纸中最粗的粗糙度为 9微米， 最细的粗糙度为 0.1微米。 In one embodiment, the polishing sandpaper has a coarsest roughness of 9 microns and a finest roughness of 0.1 microns.
在其中一个实施例中，所述通过绒布或抛光液对所述待观察的剖 面进行抛光的抛光时间为 30秒。 In one of the embodiments, the polishing time for polishing the section to be observed by a fleece or a polishing liquid is 30 seconds.
在其中一个实施例中， 所述透明片为玻璃片。 In one embodiment, the transparent sheet is a glass sheet.
在其中一个实施例中，所述透明片的大小与所述样片涂抹糊状塑
料粉的一面相匹配，能够正好将所述样片涂抹有糊状塑料粉的一面完 全覆盖。 In one embodiment, the size of the transparent sheet is smeared with the swatch The one side of the powder is matched to completely cover the side of the sample coated with the paste plastic powder.
适用于村底为任意晶向的器件， 且无需采用价格昂贵的 CVD设 备， 相对于传统采用 CVD淀积保护膜的方法， 能够节约成本。 It is suitable for devices with arbitrary crystal orientation at the bottom of the village, and it does not need to use expensive CVD equipment. Compared with the traditional method of depositing protective film by CVD, it can save cost.
附图说明 DRAWINGS
图 1是一种具悬浮的梳齿结构的 MEMS器件表面的俯视示意图； 图 2是一种具悬浮的梳齿结构的 MEMS器件的剖视示意图； 图 3是一种非悬空的梳齿结构 MEMS器件采用传统 CVD淀积保 护膜方法制备并裂片后形成的剖面形貌分析样品在显微镜下的照片； 图 4是一实施例中微机电系统器件剖面形貌分析样品的制造方 法的流程图； 1 is a top plan view of a surface of a MEMS device having a suspended comb structure; FIG. 2 is a schematic cross-sectional view of a MEMS device having a suspended comb structure; FIG. 3 is a non-suspended comb structure MEMS The device is prepared by a conventional CVD deposition protective film method and the profile of the profile analysis sample formed after the split is under the microscope; FIG. 4 is a flow chart of the method for manufacturing the sample of the microelectromechanical system device profile analysis;
图 5是一实施例中样片上表面的俯视图； Figure 5 is a top plan view of the upper surface of the sample in an embodiment;
图 6是一实施例中采用微机电系统器件剖面形貌分析样品的制 造方法打磨样片至沿图 5所示 A- A线的剖面的示意图； Figure 6 is a schematic view showing a section of the sample of the MEMS device using a microelectromechanical system device for analyzing the sample to a section along the line A-A shown in Figure 5;
图 7 是采用本发明微机电系统器件剖面形貌分析样品的制造方 法制得的样品剖面在光学显 镜下的照片； Figure 7 is a photograph of a sample cross section prepared by the manufacturing method of the cross-sectional morphology analysis sample of the MEMS device of the present invention under optical display;
图 8 是采用本发明微机电系统器件剖面形貌分析样品的制造方 法制得的样品剖面在扫描电子显 镜下的照片。 Figure 8 is a photograph of a sample profile prepared by a method for producing a sample of a microelectromechanical system device of the present invention, which is produced by a scanning electron microscope.
具体实施方式 detailed description
为使本发明的目的、特征和优点能够更为明显易懂， 下面结合附 图对本发明的具体实施方式做详细的说明。 The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
图 4 是一实施例中微机电系统器件剖面形貌分析样品的制造方 法的流程图， 包括下列步骤： Figure 4 is a flow diagram of a method of fabricating a sample of a cross-sectional morphology analysis of a MEMS device in an embodiment, comprising the steps of:
S410, 将待分析样品切片， 得到样片。 S410, the sample to be analyzed is sliced to obtain a sample.
将待分析的 MEMS器件样品切到适合抛光的尺寸， 如长乘以宽 为 8X4cm的样片。 取样时将待观察区域安排在靠近样片一短边边缘
中部， 即待观察的剖面靠近样片的一个侧面。 本发明中将该侧面称为 第一侧面。 如图 5所示， 为样片 100上表面的俯视图， 沿 A-A线得 到的剖面即为待观察的剖面， 其靠近样片的第一侧面 101。 对样品切 片时注意不应切至梳齿结构的齿部， 以免造成坍塌。 The MEMS device sample to be analyzed is cut to a size suitable for polishing, such as a length multiplied by a sample having a width of 8 x 4 cm. When sampling, arrange the area to be observed close to the edge of a short edge of the sample In the middle, the section to be observed is close to one side of the swatch. This side is referred to as the first side in the present invention. As shown in FIG. 5, for the top view of the upper surface of the sample 100, the section taken along the line AA is the section to be observed, which is close to the first side 101 of the sample. When slicing the sample, care should be taken not to cut the teeth of the comb structure to avoid collapse.
S420, 将透明的塑料粉用专用固化剂调成糊状， 并涂抹在样片的 上表面。 S420, the transparent plastic powder is adjusted into a paste with a special curing agent, and applied to the upper surface of the sample.
透明的塑料粉用固化剂调好后迅速涂抹于样片上表面，稀浆糊状 的塑料粉会填入 MEMS器件中的缝隙中， 并在样片的上表面形成一 薄层。 在优选的实施例中， 透明的塑料粉为亚克力（聚甲基丙烯酸甲 酯， PMMA )粉。 亚克力材料透光性好， 且易于固化。 在其它实施例 中也可以采用透明性较好的环氧树脂或其它透明塑料材料。 The transparent plastic powder is quickly applied to the upper surface of the sample after being adjusted with a curing agent. The paste-like plastic powder fills the gap in the MEMS device and forms a thin layer on the upper surface of the sample. In a preferred embodiment, the clear plastic powder is an acrylic (polymethyl methacrylate, PMMA) powder. Acrylic materials are light transmissive and easy to cure. Epoxy resins or other transparent plastic materials which are more transparent may also be used in other embodiments.
S430, 准备一透明片， 将透明片压平在样片涂抹有糊状塑料粉的 一面上。 S430, prepare a transparent sheet, and flatten the transparent sheet on one side of the sample coated with the paste plastic powder.
在优选的实施例中， 透明片为玻璃薄片。 在其它实施例中也可以 使用透明塑料片等代替。图 6是一实施例中采用微机电系统器件剖面 形貌分析样品的制造方法制成的样片的剖视示意图， 包括村底 10、 氧化层 20、 绝缘体上硅（ SOI )结构 30、玻璃薄片 40以及亚克力 50。 在该实施例中， 玻璃薄片 40的大小应与样片涂抹糊状塑料粉的一面 相匹配， 能够正好将样片涂抹有糊状塑料粉的一面完全覆盖。 玻璃薄 片 40可以保护样片表面， 同时压平后可以更好地透射光线， 以便后 续显微镜观察形貌， 另外也能使亚克力均勾填充在器件结构的缝隙 中。 In a preferred embodiment, the transparent sheet is a glass sheet. In other embodiments, a transparent plastic sheet or the like may be used instead. 6 is a cross-sectional view of a sample made by a method for fabricating a sample of a microelectromechanical system device for analyzing a sample of a profile of a microelectromechanical system, comprising a substrate 10, an oxide layer 20, a silicon-on-insulator (SOI) structure 30, and a glass sheet 40. And acrylic 50. In this embodiment, the size of the glass flakes 40 should match the side of the swatch coated with the paste plastic powder, and the side of the swatch coated with the mushy plastic powder can be completely covered. The glass sheet 40 protects the surface of the sample and flattens it to transmit light better for subsequent microscopic viewing of the topography. It also allows the acrylic to be filled in the gaps in the device structure.
S440, 待糊状塑料粉固化。 S440, the paste plastic powder is cured.
将样片放置 10分钟待亚克力固化。 固化温度并无严格的限定， 可参考固化剂的使用说明， 一般可以于室温条件下进行。 The sample was left for 10 minutes to be cured by acrylic. The curing temperature is not critical, and it can be referred to the use instructions of the curing agent, and it can be generally carried out at room temperature.
S450, 对样片的第一侧面进行抛光， 直至磨至待观察的剖面。
上述微机电系统器件剖面形貌分析样品的制造方法，采用透明的 塑料粉加固化剂调成液态 （稀浆糊状） 均勾涂抹在 MEMS梳齿结构 表面， 并使糊状物填充入器件结构的缝隙中。接着用透明片贴在样片 表面，待塑料粉完全固化后再采用抛光的方法制备样品。 由于缝隙被 填充增强了结构的强度， 避免了抛光过程中悬浮的梳齿结构的坍塌。 该方法适用于村底为任意晶向的器件， 且只需要普通抛光机台， 无需 采用价格昂贵的 CVD设备， 所需的耗材用量也非常少， 能够节约成 本。 适合故障分析实验室使用。 S450, polishing the first side of the sample until it is ground to the section to be observed. The method for manufacturing the profile analysis sample of the above MEMS device is prepared by using a transparent plastic powder and a curing agent to form a liquid (thin paste), which is smeared on the surface of the MEMS comb structure, and the paste is filled into the device structure. In the gap. Then, the transparent sheet is attached to the surface of the sample, and the plastic powder is completely cured, and then the sample is prepared by polishing. Since the gap is filled to enhance the strength of the structure, collapse of the suspended comb structure during polishing is avoided. The method is suitable for devices with arbitrary crystal orientation at the bottom of the village, and only requires a common polishing machine, which does not require expensive CVD equipment, and requires a small amount of consumables, which can save costs. Suitable for use in fault analysis laboratories.
在其中一个实施例中， 步骤 S450是依次用由粗到细的抛光砂纸 磨至待观察的剖面，再通过绒布或抛光液对待观察的剖面进一步抛光 30秒左右。 抛光砂纸的粗糙度 ( Ra )从 9微米逐渐替换减小成 0.1 微米。 玻璃薄片 40在抛光时会被一并磨去一部分。 In one embodiment, step S450 is followed by grinding from a coarse to fine polishing paper to the section to be observed, and further polishing the section to be observed by flannel or polishing liquid for about 30 seconds. The roughness (Ra) of the polished sandpaper was gradually reduced from 9 microns to 0.1 microns. The glass flakes 40 are partially abraded together during polishing.
图 7、 图 8分别是采用上述微机电系统器件剖面形貌分析样品的 制造方法制得的样品剖面在光学显微镜和扫描电镜下的照片。 体和详细， 但并不能因此而理解为对本发明专利范围的限制。应当指 出的是， 对于本领域的普通技术人员来说， 在不脱离本发明构思的前 提下， 还可以做出若干变形和改进， 这些都属于本发明的保护范围。 因此， 本发明专利的保护范围应以所附权利要求为准。
Fig. 7 and Fig. 8 are photographs of the sample profile prepared by the manufacturing method of the profile analysis of the microelectromechanical system device described above under the optical microscope and the scanning electron microscope, respectively. The invention is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.
Claims
1、 一种 MEMS器件剖面形貌分析样品的制造方法， 包括下列步骤： 将待分析样品切片得到样片将透明的塑料粉用专用固化剂调成糊状， 并涂 抹在所述样片的上表面； 1. A method for manufacturing a sample for cross-sectional morphology analysis of a MEMS device, including the following steps: Slice the sample to be analyzed to obtain a sample piece, mix the transparent plastic powder into a paste with a special curing agent, and apply it on the upper surface of the sample piece;
准备一透明片， 将所述透明片压平在所述样片涂抹有糊状塑料粉的一面上； 待所述糊状塑料粉固化； Prepare a transparent sheet, flatten the transparent sheet on the side of the sample sheet coated with paste plastic powder; wait until the paste plastic powder solidifies;
对所述样片的第一侧面进行抛光， 直至磨至待观察的剖面。 The first side of the sample piece is polished until the section to be observed is ground.
2、根据权利要求 1所述的 MEMS器件剖面形貌分析样品的制造方法，其特 征在于， 所述透明的塑料粉为亚克力粉。 2. The method for manufacturing a MEMS device cross-sectional morphology analysis sample according to claim 1, characterized in that the transparent plastic powder is acrylic powder.
3、根据权利要求 2所述的 MEMS器件剖面形貌分析样品的制造方法，其特 征在于， 所述待所述糊状塑料粉固化是放置 10分钟。 3. The method for manufacturing a MEMS device cross-sectional morphology analysis sample according to claim 2, characterized in that the paste-like plastic powder is allowed to solidify for 10 minutes.
4、根据权利要求 1所述的 MEMS器件剖面形貌分析样品的制造方法，其特 征在于， 所述对所述样片的第一侧面进行抛光， 直至磨至待观察的剖面的步骤 是依次用由粗到细的抛光砂纸磨至所述待观察的剖面， 再通过绒布或抛光液对 所述待观察的剖面进行抛光。 4. The method for manufacturing a sample for cross-sectional morphology analysis of a MEMS device according to claim 1, wherein the step of polishing the first side of the sample until it reaches the cross-section to be observed is performed by: Grind the section to be observed with coarse to fine polishing sandpaper, and then polish the section to be observed with flannel or polishing fluid.
5、根据权利要求 4所述的 MEMS器件剖面形貌分析样品的制造方法，其特 征在于， 所述抛光砂纸中最粗的粗糙度为 9微米， 最细的粗糙度为 0.1微米。 5. The method for manufacturing a MEMS device cross-sectional morphology analysis sample according to claim 4, characterized in that the coarsest roughness of the polishing sandpaper is 9 microns, and the finest roughness is 0.1 microns.
6、 根据权利要求 4或 5所述的 MEMS器件剖面形貌分析样品的制造方法， 其特征在于， 所述通过绒布或抛光液对所述待观察的剖面进行抛光的抛光时间 为 30秒。 6. The method for manufacturing a MEMS device cross-sectional morphology analysis sample according to claim 4 or 5, characterized in that the polishing time for polishing the cross-section to be observed by flannel or polishing liquid is 30 seconds.
7、根据权利要求 1所述的 MEMS器件剖面形貌分析样品的制造方法，其特 征在于， 所述透明片为玻璃片。 7. The method for manufacturing a MEMS device cross-sectional morphology analysis sample according to claim 1, wherein the transparent sheet is a glass sheet.
8、 根据权利要求 1或 7所述的 MEMS器件剖面形貌分析样品的制造方法， 其特征在于， 所述透明片的大小与所述样片涂抹糊状塑料粉的一面相匹配， 能 够正好将所述样片涂抹有糊状塑料粉的一面完全覆盖。
8. The method for manufacturing a MEMS device cross-sectional morphology analysis sample according to claim 1 or 7, characterized in that the size of the transparent piece matches the side of the sample piece coated with paste plastic powder, so that the size of the sample piece can be exactly The side of the sample piece coated with paste plastic powder is completely covered.
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