WO2014005349A1 - Array substrate, liquid crystal display apparatus, and method for manufacturing array substrate - Google Patents
Array substrate, liquid crystal display apparatus, and method for manufacturing array substrate Download PDFInfo
- Publication number
- WO2014005349A1 WO2014005349A1 PCT/CN2012/078575 CN2012078575W WO2014005349A1 WO 2014005349 A1 WO2014005349 A1 WO 2014005349A1 CN 2012078575 W CN2012078575 W CN 2012078575W WO 2014005349 A1 WO2014005349 A1 WO 2014005349A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode layer
- layer
- array substrate
- transparent
- transparent electrode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 17
- 238000003860 storage Methods 0.000 claims abstract description 48
- 238000009413 insulation Methods 0.000 claims abstract 3
- 239000010410 layer Substances 0.000 claims description 332
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 17
- 239000011241 protective layer Substances 0.000 claims description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Definitions
- the present invention relates to the field of electronic display, and more particularly to an array substrate, a liquid crystal display device, and a method of fabricating an array substrate.
- the liquid crystal display device comprises a backlight module and a liquid crystal panel.
- the liquid crystal panel is composed of an array substrate and a color film substrate which are opposite to each other.
- a plurality of TFTs are arranged on the array substrate (as shown in FIG. 1 ).
- a transparent electrode layer and a plurality of criss-crossing scan lines and data lines each TFT includes a gate connected to the scan line, a source connected to the data line, and a drain connected to the transparent electrode layer, in order to ensure the TFT
- the liquid crystal molecules can be deflected in one scanning period.
- a storage electrode layer is disposed under the transparent electrode layer, and a storage capacitor is formed between the two, so that the charge can be stored when the TFT is turned on, and the TFT is turned off until the next turn-on.
- the power is supplied during the period to maintain the deflection of the liquid crystal molecules.
- the storage electrode layer and the transparent electrode layer are separated by a non-metal film layer such as an insulating layer or a protective layer, and the storage capacitance is small, which adversely stores the amount of electricity.
- the technical problem to be solved by the present invention is to provide an array substrate having a larger storage capacitance, a liquid crystal display device, and a method of manufacturing the array substrate.
- An array substrate includes a storage electrode layer, and the surface of the storage electrode layer is sequentially provided with an insulating layer and a transparent electrode layer.
- the array substrate includes a gate electrode layer disposed in parallel with the storage electrode layer, and an insulating layer and an active layer are sequentially disposed above the gate electrode layer, and a source electrode layer is disposed above the active layer a drain electrode layer, one end of the drain electrode layer being electrically connected to one end of the transparent electrode layer.
- a gate electrode layer disposed in parallel with the storage electrode layer, and an insulating layer and an active layer are sequentially disposed above the gate electrode layer, and a source electrode layer is disposed above the active layer a drain electrode layer, one end of the drain electrode layer being electrically connected to one end of the transparent electrode layer.
- the active layer includes an a-Si layer and an n+ a-Si layer which are sequentially laid on the insulating layer, and the source electrode layer and the drain electrode layer are laid on the n+ a-Si layer.
- a conductive channel is disposed between the source electrode layer and the drain electrode layer, the conductive channel penetrating through the n+a-Si layer, the source electrode layer, the drain electrode layer, and the conductive channel And a surface of the transparent electrode layer is covered with a protective layer. This is a specific TFT structure.
- the transparent electrode layer is a transparent electrode layer of an indium tin oxide material. This is a specific transparent electrode layer material.
- a liquid crystal display device comprising the above array substrate.
- a method for manufacturing an array substrate comprising the steps of:
- A forming a gate electrode layer of the TFT on the glass substrate, and storing the electrode layer, and then laying an insulating layer on the gate electrode layer and the storage electrode layer;
- a transparent electrode layer is formed on the insulating layer of the corresponding region of the storage electrode layer.
- the step B includes the following steps:
- the transparent electrode layer is not required to be manufactured by exposure and development, and the photoresist remaining in the previous process is fully utilized as a mask, and the transparent conductive material on the surface is naturally peeled off when the photoresist is peeled off, and the residual transparent The conductive material naturally forms the desired transparent electrode layer; this saves a mask process, which is beneficial to increase production efficiency and reduce manufacturing costs.
- the step B includes the following steps:
- B2 laying a photoresist on the transparent conductive material, forming a transparent electrode pattern by exposure and development;
- B3 etching away the transparent conductive material other than the transparent electrode pattern;
- the transparent electrode layer is formed by exposure and development, and the a-Si layer and the n+a-Si layer of the TFT are directly formed by using the residual photoresist as a mask, and a is eliminated.
- the separate mask process of the -Si layer and the n+a-Si layer helps to increase production efficiency and reduce manufacturing costs.
- the step C includes the following steps:
- C2 laying a photoresist on a surface of the metal conductive layer, forming a source pattern and a drain pattern of the TFT by exposure and development, the drain pattern covering one end of the transparent electrode layer;
- C3 etching a metal conductive layer to form a source electrode layer and a drain electrode layer of the TFT;
- a protective layer is laid on the surface of the source electrode layer, the drain electrode layer, the conductive channel, and the transparent electrode layer.
- the transparent electrode layer is made of indium tin oxide material. This is a specific transparent electrode layer material.
- the invention discloses an array substrate, a liquid crystal display device and a method for manufacturing the array substrate.
- the insulating layer is separated between the storage electrode layer and the transparent electrode layer, and the insulating layer and the protective layer are separated by a plurality of layers.
- the structure of the metal film layer increases the capacity of the storage capacitor.
- 1 is a schematic structural view of a conventional array substrate
- FIG. 2 is a schematic structural view of an array substrate of the present invention
- step a of the embodiment of the present invention is an effect diagram of step a of the embodiment of the present invention.
- step b of an embodiment of the present invention is an effect diagram of step b of an embodiment of the present invention.
- Figure 5 is an effect diagram of step c of the embodiment of the present invention.
- Figure 6 is an effect diagram of step d of the embodiment of the present invention.
- FIG. 7 is a view showing an effect of sputtering a transparent electrode layer in step e of the embodiment of the present invention.
- Figure 9 is a diagram showing the effect of step f in the embodiment of the present invention.
- Figure 10 is an effect diagram of step g of the embodiment of the present invention.
- Figure 11 is an effect diagram of step h of the embodiment of the present invention.
- Figure 12 is an effect diagram of the step i of the embodiment of the present invention.
- 100 glass substrate; 200, insulating layer; 300, a-Si layer; 400, N+a-Si layer; 510, gate electrode layer; 520, storage electrode layer; 600, metal conductive layer; a source electrode layer; 620, a drain electrode layer; 700, a protective layer; 800, a transparent electrode layer.
- the present invention discloses a liquid crystal display device comprising a backlight module and a liquid crystal panel.
- the liquid crystal panel is composed of an array substrate and a color filter substrate disposed on each other.
- the array substrate of the present invention is provided with a plurality of TFTs and a plurality of transparent electrodes. And a plurality of criss-crossing scan lines and data lines, each of the TFTs includes a gate electrode layer connected to the scan line, a source electrode layer connected to the data line, and a drain electrode layer connected to the transparent electrode layer.
- the array substrate further includes a storage electrode layer, and the surface of the storage electrode layer is sequentially provided with an insulating layer and a transparent electrode layer.
- the storage electrode layer 520 and the gate electrode layer 510 of the array substrate are all disposed on the glass substrate 100.
- the gate electrode layer 510 is sequentially provided with an insulating layer 200, an a-Si layer 300 and N+a.
- -Si a layer 400, a source electrode layer 610 and a drain electrode layer 620 are disposed on the N+a-Si layer 400.
- a conductive channel is disposed between the source electrode layer 610 and the drain electrode layer 620.
- the N+a-Si layer 400 is provided with an insulating layer 200 and a transparent electrode layer 800.
- the drain electrode layer 620 is disposed above the transparent electrode layer 800 and overlaps with one end of the transparent electrode layer 800 to realize electricity. connection.
- a protective layer 700 is disposed on the surface of the source electrode layer 610, the drain electrode layer 620, the conductive channel, and the transparent electrode layer 800.
- the transparent electrode layer 800 may be made of a transparent conductive material such as indium tin oxide.
- the insulating layer 200 is interposed between the storage electrode layer 520 and the transparent electrode layer 800, and the capacity of the storage capacitor is increased compared to the structure of the multi-layer non-metal medium.
- a metal layer is deposited on the glass substrate 100 by sputtering, and then formed into a gate electrode layer 510 and a storage electrode layer 520 by a coating exposure development method, and the sputtered metal layer material is formed.
- a metal layer is deposited on the glass substrate 100 by sputtering, and then formed into a gate electrode layer 510 and a storage electrode layer 520 by a coating exposure development method, and the sputtered metal layer material is formed.
- high conductivity metals such as: Al, Cu, Ag, Mo, Cr, Ti, etc.
- the gate electrode layer 510 and the storage b as shown in FIG. 4
- CVD chemical vapor deposition
- d removing the active layer of the corresponding region of the storage electrode layer 520 by dry plasma etching (etching the compound gas whose main gas is F), leaving the insulating layer 200 (see FIG. 6);
- the transparent electrode layer 800 depositing the transparent electrode layer 800 directly by sputtering (the material may be: ITO, germanium, etc.), after the photoresist is stripped, the transparent electrode layer 800 above the TFT active layer is automatically removed, leaving the storage a transparent electrode layer 800 above the electrode layer 520 region and at the TFT pixel (see FIGS. 7, 8);
- a metal conductive layer 600 is deposited by sputtering, covering the transparent electrode layer 800 and the active layer of the TFT, and the material thereof is a high conductivity metal such as Al, Cu, Ag, Mo, Cr, Ti, etc. (see FIG. 9) ; g: as shown in FIG. 10, a photoresist is deposited on the surface of the metal conductive layer 600 (shown as PR in FIG. 9), and a source pattern and a drain pattern of the TFT are formed by exposure and development, and the drain pattern covers the surface.
- the metal conductive layer 600 is processed by a wet etching method to form a source electrode layer 610 and a drain electrode layer 620 of the TFT (see FIG. 11); FIG. 12);
- a protective layer 700 (passivation) is deposited by CVD, covering the source electrode layer 610, the drain electrode layer 620, the conductive channel and the transparent electrode layer 800 (see Fig. 2).
- the transparent electrode layer is not required to be manufactured by exposure and development, and the photoresist remaining in the previous process is fully utilized as a mask, and the transparent conductive material on the surface is naturally peeled off when the photoresist is peeled off, and the residual transparent
- the conductive material naturally forms the desired transparent electrode layer; this saves a mask process, and the array substrate can be produced by using only three masks, which is advantageous for improving production efficiency and reducing manufacturing cost.
- the structure of the TFT portion in the present invention can also be fabricated by using existing techniques.
- a method for manufacturing an array substrate comprising the steps of:
- b laying a photoresist on the transparent conductive material, and forming a transparent electrode pattern over the area of the storage electrode layer 520 and at the TFT pixel by exposure and development;
- an active layer is laid over the surface of the storage electrode layer 520 and the transparent electrode pattern and the insulating layer 200 at the TFT pixel (the a-Si layer 300 and the N+a-Si layer 400 are sequentially laid);
- the exposed transparent conductive material forms the transparent electrode layer 800;
- f laying the metal conductive layer 600 by sputtering, covering the transparent electrode layer 800 and the TFT active layer,
- the material is a high conductivity metal such as: Al, Cu, Ag, Mo, Cr, Ti, etc.;
- a photoresist is deposited on the surface of the metal conductive layer 600, and a source pattern and a drain pattern of the TFT are formed by exposure and development, and the drain pattern covers one end of the transparent electrode layer 800;
- h processing the metal conductive layer 600 by a wet etching method to form a source electrode layer 610 and a drain electrode layer 620 of the TFT; j: finally depositing a protective layer 700 (passivation) by the CVD method to cover the source electrode layer 610.
- the transparent electrode layer is formed by exposure and development, and the active layer of the TFT (a-Si layer and N+a-Si is directly formed by using the residual photoresist as a mask). Layer), the separate mask process of the a-Si layer and the N+a-Si layer is eliminated, which is advantageous for improving production efficiency and reducing manufacturing cost.
- the structure of the TFT portion in the present invention can also be fabricated using existing techniques.
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/580,408 US8842252B2 (en) | 2012-07-02 | 2012-07-12 | Array substrate, LCD device, and method for manufacturing array substrate |
DE112012006496.8T DE112012006496T5 (en) | 2012-07-02 | 2012-07-12 | Matrix substrate, liquid crystal display and method for producing a matrix substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210223797.2 | 2012-07-02 | ||
CN2012102237972A CN102749776A (en) | 2012-07-02 | 2012-07-02 | Array substrate, liquid crystal display device and manufacturing method of array substrate |
Publications (1)
Publication Number | Publication Date |
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WO2014005349A1 true WO2014005349A1 (en) | 2014-01-09 |
Family
ID=47030089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2012/078575 WO2014005349A1 (en) | 2012-07-02 | 2012-07-12 | Array substrate, liquid crystal display apparatus, and method for manufacturing array substrate |
Country Status (3)
Country | Link |
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CN (1) | CN102749776A (en) |
DE (1) | DE112012006496T5 (en) |
WO (1) | WO2014005349A1 (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1445583A (en) * | 2002-03-15 | 2003-10-01 | Lg.飞利浦Lcd有限公司 | Liquid crystal display and manufacturing method thereof |
CN101097375A (en) * | 2006-06-30 | 2008-01-02 | Lg.菲利浦Lcd株式会社 | Array substrate for liquid crystal display device and method of fabricating the same |
CN101304033A (en) * | 2007-05-11 | 2008-11-12 | 三菱电机株式会社 | Display device and manufacturing method thereof |
US20090108264A1 (en) * | 2007-10-31 | 2009-04-30 | Mitsubishi Electric Corporation | Laminated conductive film, electro-optical display device and production method of same |
CN102306650A (en) * | 2011-07-13 | 2012-01-04 | 友达光电股份有限公司 | Pixel structure and manufacturing method thereof |
CN102385196A (en) * | 2011-10-25 | 2012-03-21 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and formation method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101107265B1 (en) * | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | Thin Film Transistor Substrate of Horizontal Electric Field And Fabricating Method Thereof, Liquid Crystal Display Panel Using The Same And Fabricating Method Thereof |
US20110085121A1 (en) * | 2009-10-08 | 2011-04-14 | Hydis Technologies Co., Ltd. | Fringe Field Switching Mode Liquid Crystal Display Device and Method of Fabricating the Same |
JP5771365B2 (en) * | 2009-11-23 | 2015-08-26 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | Medium and small liquid crystal display |
-
2012
- 2012-07-02 CN CN2012102237972A patent/CN102749776A/en active Pending
- 2012-07-12 WO PCT/CN2012/078575 patent/WO2014005349A1/en active Application Filing
- 2012-07-12 DE DE112012006496.8T patent/DE112012006496T5/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1445583A (en) * | 2002-03-15 | 2003-10-01 | Lg.飞利浦Lcd有限公司 | Liquid crystal display and manufacturing method thereof |
CN101097375A (en) * | 2006-06-30 | 2008-01-02 | Lg.菲利浦Lcd株式会社 | Array substrate for liquid crystal display device and method of fabricating the same |
CN101304033A (en) * | 2007-05-11 | 2008-11-12 | 三菱电机株式会社 | Display device and manufacturing method thereof |
US20090108264A1 (en) * | 2007-10-31 | 2009-04-30 | Mitsubishi Electric Corporation | Laminated conductive film, electro-optical display device and production method of same |
CN102306650A (en) * | 2011-07-13 | 2012-01-04 | 友达光电股份有限公司 | Pixel structure and manufacturing method thereof |
CN102385196A (en) * | 2011-10-25 | 2012-03-21 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and formation method thereof |
Also Published As
Publication number | Publication date |
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CN102749776A (en) | 2012-10-24 |
DE112012006496T5 (en) | 2015-02-26 |
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