WO2013155753A1 - 液晶面板的制作方法 - Google Patents

液晶面板的制作方法 Download PDF

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Publication number
WO2013155753A1
WO2013155753A1 PCT/CN2012/075625 CN2012075625W WO2013155753A1 WO 2013155753 A1 WO2013155753 A1 WO 2013155753A1 CN 2012075625 W CN2012075625 W CN 2012075625W WO 2013155753 A1 WO2013155753 A1 WO 2013155753A1
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Prior art keywords
liquid crystal
crystal panel
fabricating
voltage
exposure
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PCT/CN2012/075625
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English (en)
French (fr)
Inventor
康志聪
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/583,161 priority Critical patent/US20130278880A1/en
Priority to DE112012006094.6T priority patent/DE112012006094T5/de
Publication of WO2013155753A1 publication Critical patent/WO2013155753A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133715—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films by first depositing a monomer

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a method for fabricating a liquid crystal panel.
  • Liquid crystal display (Liquid Crystal Display, LCD) is a flat panel display device that uses the characteristics of liquid crystal materials to display images (Flat Panel) Display, FPD), which has the advantages of light weight, low driving voltage and low power consumption compared to other display devices, has become the mainstream product in the entire consumer market.
  • LCD Liquid Crystal Display
  • FPD Full Panel Display
  • the liquid crystal panel is the most important component of the liquid crystal display, and includes a vacuum-bonded TFT array substrate, a CF substrate, a liquid crystal layer disposed therebetween, and an alignment film.
  • the alignment film may be disposed on the TFT array substrate and/or the CF substrate for controlling a predetermined initial state alignment of liquid crystal molecules of the liquid crystal layer, thereby affecting display characteristics of the liquid crystal panel. Therefore, the control of the alignment film is extremely important.
  • a method of fabricating an alignment film in a liquid crystal panel is to form an alignment film on an inner surface of a TFT array substrate and a CF substrate while forming a TFT array substrate and a CF substrate.
  • Another method for producing an alignment film in a liquid crystal panel is to inject a monomer for polymer alignment together with liquid crystal molecules into a vacuum-bonded liquid crystal panel, and irradiate light to cure it, thereby forming a TFT array substrate.
  • the polymer monomer will form an alignment film and direct the liquid crystal molecules to be regularly arranged.
  • the second manufacturing method is a non-contact forming alignment film, but the polymer single The body is sensitive to the absorption of light, so when the alignment film is formed by light irradiation, different processes will have an important influence on the optical characteristics, reliability and productivity of the liquid crystal panel.
  • a primary object of the present invention is to provide a method of fabricating a liquid crystal panel, which is intended to provide better reliability and optical characteristics of the resulting liquid crystal panel.
  • the invention provides a method for fabricating a liquid crystal panel, comprising the following steps:
  • the liquid crystal After adding a polymer monomer for alignment to the liquid crystal, the liquid crystal is injected between the vacuum-bonded TFT array substrate and the CF substrate to form a liquid crystal panel;
  • the exposed light spectrum is between 300-450 nm, the irradiance at a wavelength of 300-400 nm is 10-30 mW/cm2, and the exposure time to the liquid crystal panel is 30-50 s;
  • the liquid crystal panel after the exposure treatment is subjected to a curing treatment while applying a curing voltage to the liquid crystal panel.
  • the illuminance of the exposed light having a wavelength of 300 to 400 nm is 20 mW/cm 2 .
  • the curing voltage applied to the liquid crystal panel is a square wave voltage or a direct current voltage, and the voltage effective value thereof is 10-20V.
  • the voltage effective value of the curing voltage applied to the liquid crystal panel is 15V.
  • the step of performing the curing process on the liquid crystal panel after the exposure processing is further performed:
  • the liquid crystal panel after the exposure treatment is subjected to heat treatment at a temperature of 30 to 50 ° C.
  • the temperature at which the liquid crystal panel after the exposure treatment is heated is 40 °C.
  • the method before the step of performing exposure processing on the liquid crystal panel, the method further includes:
  • the exposure light source is turned on, and the light emitted therefrom is filtered to obtain light having a spectrum between 300 and 450 nm, and the irradiance at a wavelength of 300 to 400 nm is 10 to 30 mW/cm 2 .
  • the exposed light is:
  • the dominant wavelength is 340-350 nm
  • the 1/2 brightness height and width are 52-62 nm
  • the 1/3 brightness height and width are 70-80 nm.
  • the exposed light is generated by an excimer light source, wherein the excimer comprises any one of KrF, ArP, NeF, and XeCl.
  • the invention also provides another method for fabricating a liquid crystal panel, comprising the following steps:
  • the liquid crystal After adding a polymer monomer for alignment to the liquid crystal, the liquid crystal is injected between the vacuum-bonded TFT array substrate and the CF substrate to form a liquid crystal panel;
  • the exposed light spectrum is between 300-450 nm, the irradiance at a wavelength of 300-400 nm is 5-15 mW/cm 2 , and the exposure time to the liquid crystal panel is 40-60 s;
  • the liquid crystal panel after the exposure treatment is subjected to a curing treatment while applying a curing voltage to the liquid crystal panel.
  • the exposed light has a irradiance of 10 mW/cm 2 at a wavelength of 300-400 nm.
  • the curing voltage applied to the liquid crystal panel is a square wave voltage or a direct current voltage, and the voltage effective value thereof is 10-20V.
  • the voltage effective value of the curing voltage applied to the liquid crystal panel is 15V.
  • the step of performing the curing process on the liquid crystal panel after the exposure processing is further performed:
  • the liquid crystal panel after the exposure treatment is subjected to heat treatment at a temperature of 30 to 50 ° C.
  • the temperature at which the liquid crystal panel after the exposure treatment is heated is 40 °C.
  • the method before the step of performing exposure processing on the liquid crystal panel, the method further includes:
  • the exposure light source is turned on, and the light emitted therefrom is filtered to obtain light having a spectrum between 300 and 450 nm, and the irradiance at a wavelength of 300 to 400 nm is 5 to 15 mW/cm 2 .
  • the exposed light is:
  • the dominant wavelength is 315-325 nm
  • the 1/2 brightness height and width are 35-45 nm
  • the 1/3 brightness height and width are 44-54 nm.
  • the exposed light is generated by an excimer light source, wherein the excimer comprises any one of KrF, ArP, NeF, and XeCl.
  • the invention adopts suitable light combined with its corresponding process, so that the liquid crystal panel has better effect on contrast and liquid crystal responsivity.
  • FIG. 1 is a schematic flow chart of a first embodiment of a method for fabricating a liquid crystal panel according to the present invention
  • FIG. 2 is a schematic diagram showing the spectrum of light used in the first embodiment of the method for fabricating a liquid crystal panel of the present invention
  • FIG. 3 is a schematic diagram showing the relationship between contrast and exposure time in a liquid crystal panel produced by the method for fabricating a liquid crystal panel according to the first embodiment of the present invention
  • FIG. 4 is a schematic diagram showing the relationship between the response speed of the liquid crystal and the exposure time in the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the first embodiment of the present invention
  • FIG. 5 is a schematic diagram showing the relationship between the exposure time and the VT curve in the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the first embodiment of the present invention
  • Figure 6 is a partial enlarged view of Figure 5;
  • FIG. 7 is a schematic diagram showing the relationship between exposure time and VHR in a liquid crystal panel produced by the method for fabricating a liquid crystal panel according to the first embodiment of the present invention
  • FIG. 8 is a schematic diagram showing the relationship between the exposure time of the liquid crystal panel and the residual ion density produced by the method for fabricating the liquid crystal panel according to the first embodiment of the present invention
  • FIG. 9 is a schematic flow chart of a second embodiment of a method for fabricating a liquid crystal panel according to the present invention.
  • FIG. 10 is a schematic diagram showing the spectrum of light used in the second embodiment of the method for fabricating a liquid crystal panel of the present invention.
  • FIG. 11 is a view showing a relationship between contrast and exposure time in a liquid crystal panel produced by a method of fabricating a liquid crystal panel according to a second embodiment of the present invention
  • FIG. 12 is a schematic diagram showing relationship between liquid crystal response speed and exposure time in a liquid crystal panel produced by a method for fabricating a liquid crystal panel according to a second embodiment of the present invention
  • FIG. 13 is a schematic diagram showing the relationship between the exposure time and the VT curve in the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the second embodiment of the present invention
  • Figure 14 is a partial enlarged view of Figure 13;
  • 15 is a schematic diagram showing the relationship between exposure time and VHR in a liquid crystal panel produced by a method for fabricating a liquid crystal panel according to a second embodiment of the present invention.
  • Fig. 16 is a view showing the relationship between the exposure time of the liquid crystal panel and the residual ion density produced by the method for fabricating the liquid crystal panel according to the second embodiment of the present invention.
  • FIG. 1 is a schematic flow chart of a first embodiment of a method for fabricating a liquid crystal panel according to the present invention.
  • the manufacturing method of the liquid crystal panel includes the following steps:
  • Step S101 after adding a polymer monomer for alignment in the liquid crystal, the liquid crystal is injected between the vacuum-bonded TFT array substrate and the CF substrate to form a liquid crystal panel;
  • the polymer monomer for alignment is added to a general liquid crystal such that the polymer monomer forms an alignment polymer layer under subsequent illumination, thereby guiding the liquid crystal molecules to perform a certain arrangement.
  • Step S102 performing exposure processing on the liquid crystal panel, wherein the spectrum of the irradiated light has a spectrum range of 300 Between -450nm, and the irradiance at a wavelength of 300-400nm is 10-30mW/cm2, the exposure time is 30-50s;
  • the liquid crystal panel is subjected to exposure treatment so that the liquid crystal molecules are regularly arranged under the action of the polymer monomer.
  • the long axis of the liquid crystal molecules is perpendicular to the substrate of the liquid crystal panel, or the long axis of the liquid crystal molecules is at an oblique angle to the substrate of the liquid crystal panel, or the long axis of the liquid crystal molecules is parallel to the substrate of the liquid crystal panel.
  • the long axis of the liquid crystal molecules is vertically aligned with the substrate of the liquid crystal panel.
  • FIG. 2 is a schematic diagram of the frequency spectrum of the light used in the first embodiment of the method for fabricating the liquid crystal panel of the present invention.
  • the light spectrum utilized by the exposure process ranges from 300 to 450 nm, and the irradiance at a wavelength of 300 to 400 nm is 10 to 30 mW/cm 2 .
  • the illuminance of the wavelength at 300-400 nm is preferably 20 mW/cm2.
  • Step S103 performing a curing process on the liquid crystal panel after the exposure processing, and applying a curing voltage to the liquid crystal panel.
  • the liquid crystal panel includes a TFT array substrate, a CF substrate, and a liquid crystal layer between the TFT array substrate and the CF substrate.
  • a pixel electrode is disposed on the TFT array substrate, and a common electrode is disposed on the CF substrate.
  • an electromagnetic field is formed between the pixel electrode and the common electrode, and the electromagnetic field deflects the liquid crystal molecules by a certain angle. Therefore, the liquid crystal molecules are deflected by a certain tilt angle by applying a curing voltage, and then solidified, so that the next time the driving voltage is applied to the liquid crystal panel, the liquid crystal molecules can be quickly deflected to a suitable position, further accelerating the liquid crystal molecules. responding speed.
  • the curing voltage may be a square wave voltage or a direct current voltage, and the voltage effective value is 10-20 V. Preferably, the voltage effective value is 15V.
  • the illuminance of the light spectrum is between 300-450 nm and the wavelength is 300-400 nm, and the liquid crystal panel is exposed by using a corresponding process, so that the liquid crystal panel is in contrast and liquid crystal.
  • the effect on responsiveness is better.
  • FIG. 3 is a view showing the relationship between the contrast and the exposure time of the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the first embodiment of the present invention.
  • the horizontal axis represents the exposure time
  • the vertical axis represents the contrast.
  • FIG. 4 is a schematic diagram showing the relationship between the liquid crystal response speed and the exposure time of the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the first embodiment of the present invention.
  • the horizontal axis represents the exposure time
  • the vertical axis represents the liquid crystal response speed.
  • the speed of the liquid crystal response speed can be reflected by the length of time elapsed between 10% brightness and 90% brightness, including the time of the ascent experience and the time of the down experience. Since the brightness is proportional to the driving voltage of the liquid crystal panel, the change in brightness also reflects the change in voltage.
  • the liquid crystal panel produced by the exposure time of the liquid crystal panel when exposed to light of FIG. 2 has an effect on contrast and liquid crystal response speed when the exposure time is 30-50 s.
  • the exposure time can be 40 s.
  • the liquid crystal panel After exposing the liquid crystal panel to the above, the liquid crystal panel can be placed on a workbench and cured, and the curing temperature of the table is 30-50 ° C. Preferably, the curing temperature is 40 ° C.
  • the light to be exposed may be: a dominant wavelength of 340-350 nm, a 1/2 brightness height and width of 52-62 nm, and a 1/3 brightness height and width of 70-80 nm.
  • the 1/2 brightness height and width refers to a difference between two wavelength values corresponding to one-half of the peak value of the illuminance of the light, that is, a width; and a 1/3 brightness width refers to one-third of the peak value of the illuminance of the light.
  • the difference between the two wavelength values ie the width.
  • the exposure light can be generated by an excimer light source that produces high-power ultraviolet light by an excimer working substance, which may be any one of KrF, ArP, NeF, and XeCl.
  • the light for exposure can also be generated by other light sources, and a filter is also provided for filtering light other than the above-mentioned exposure light.
  • FIG. 5 is a schematic diagram showing the relationship between the exposure time and the VT curve in the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the first embodiment of the present invention
  • FIG. 6 is a partial enlarged view of FIG. .
  • the horizontal axis of the VT curve is the voltage effective value
  • the vertical axis is the transmittance, that is, the VT curve represents the relationship between the effective value of the voltage and the transmittance.
  • the corresponding voltage difference of the liquid crystal panel is 60 s, 120 s with respect to the exposure time.
  • the voltage difference between the liquid crystal panels of the transmittance of 5% to 0% is large, and therefore, the liquid crystal panel formed by the exposure time of 15s, 30s, and 45s has more gray scales.
  • Fig. 7 is a view showing the relationship between exposure time and VHR in a liquid crystal panel produced by the method for fabricating a liquid crystal panel according to the first embodiment of the present invention.
  • the above liquid crystal panel was subjected to a VHR test under the following conditions: a temperature of 20 ⁇ 2 ° C, a voltage of ⁇ 5 V, a pulse width of 10 ms, and a voltage holding time of 166.7 ms.
  • This VHR is the voltage holding ratio of the liquid crystal. From the test results of Fig. 7, it is known that the exposure time has little effect on VHR.
  • Fig. 8 is a view showing the relationship between the exposure time of the liquid crystal panel and the residual ion density produced by the method for fabricating the liquid crystal panel according to the first embodiment of the present invention. Since the polymer monomer added in the liquid crystal molecules is exposed, some impurity ions affecting the liquid crystal panel are generated. Therefore, after the liquid crystal panel is made, the liquid crystal panel needs to be tested for ion concentration. The test conditions are: temperature is 20 ⁇ 2 ° C, voltage is 5 V, waveform is sawtooth wave, and frequency is 0.01 Hz. As can be seen from FIG. 8, the ion density remaining in the liquid crystal panel did not increase as the exposure time increased as a whole.
  • FIG. 9 is a schematic flow chart of a second embodiment of a method for fabricating a liquid crystal panel according to the present invention.
  • the manufacturing method of the liquid crystal panel includes the following steps:
  • Step S201 after adding a polymer monomer for alignment in the liquid crystal, the liquid crystal is injected between the vacuum-bonded TFT array substrate and the CF substrate to form a liquid crystal panel;
  • Step S202 performing exposure processing on the liquid crystal panel, the exposed light spectrum is between 300-450 nm, the irradiance at a wavelength of 300-400 nm is 5-15 mW/cm2, and the exposure time to the liquid crystal panel is 40-60 s;
  • step S203 the liquid crystal panel after the exposure processing is subjected to a curing process, and a curing voltage is applied to the liquid crystal panel.
  • FIG. 10 is a schematic diagram showing the spectrum of light used in the second embodiment of the method for fabricating the liquid crystal panel of the present invention.
  • the irradiance of the wavelength at 300-400 nm may preferably be 10 mW/cm2.
  • the exposure time will be 40-60 s.
  • the exposure time is preferably 50 s.
  • the curing voltage applied to the liquid crystal panel in step S203 may also be a square wave voltage or a direct current voltage, and the effective voltage value is 10-20V. The effective value of this voltage is 15V.
  • the invention is directed to the light spectrum of 300-450 nm and the irradiance of the wavelength of 300-400 nm is 5-15 mW/cm2, and the corresponding process is used to expose the liquid crystal panel, so that the liquid crystal panel has contrast and liquid crystal responsivity. The effect is better.
  • FIG. 11 is a view showing the relationship between contrast and exposure time in a liquid crystal panel produced by the method for fabricating a liquid crystal panel according to a second embodiment of the present invention.
  • the horizontal axis represents the exposure time
  • the vertical axis represents the contrast.
  • FIG. 12 is a view showing the relationship between the response speed of the liquid crystal and the exposure time in the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the second embodiment of the present invention.
  • the horizontal axis represents the exposure time
  • the vertical axis represents the liquid crystal response speed.
  • the speed of the liquid crystal response speed can be reflected by the length of time elapsed between 10% brightness and 90% brightness, including the time of the ascent experience and the time of the down experience. Since the brightness is proportional to the driving voltage of the liquid crystal panel, the change in brightness also reflects the change in voltage.
  • the liquid crystal response speed increases with the exposure time between 30 and 45 s, and remains substantially unchanged after the exposure time of 45 s. Therefore, the liquid crystal panel produced by the liquid crystal panel having an exposure time of between 45 and 120 s has a better liquid crystal response speed.
  • the liquid crystal panel produced by exposing the liquid crystal panel with the light shown in FIG. 10 at an exposure time of 40-60 s has an effect on contrast and liquid crystal response speed.
  • the exposure time can be 50 s.
  • the liquid crystal panel After exposing the liquid crystal panel to the above, the liquid crystal panel can be placed on a workbench and cured, and the curing temperature of the table is 30-50 ° C. Preferably, the curing temperature is 40 ° C.
  • the above exposed light may be: a dominant wavelength of 315-325 nm, a 1/2 brightness height and width of 35-45 nm, and a 1/3 brightness height and width of 44-54 nm.
  • the 1/2 brightness height and width refers to a difference between two wavelength values corresponding to one-half of the peak value of the illuminance of the light, that is, a width; and a 1/3 brightness width refers to one-third of the peak value of the illuminance of the light.
  • the difference between the two wavelength values ie the width.
  • the exposure light can be generated by an excimer light source that produces high-power ultraviolet light by an excimer working substance, which may be any one of KrF, ArP, NeF, and XeCl.
  • the light for exposure can also be generated by other light sources, and a filter is also provided for filtering light other than the above-mentioned exposure light.
  • FIG. 13 is a schematic diagram showing the relationship between the exposure time and the VT curve in the liquid crystal panel produced by the method for fabricating the liquid crystal panel according to the second embodiment of the present invention
  • FIG. 14 is a partial enlarged view of FIG. .
  • the horizontal axis of the VT curve is the voltage effective value
  • the vertical axis is the transmittance, that is, the VT curve represents the relationship between the effective value of the voltage and the transmittance.
  • the corresponding voltage difference of the liquid crystal panel is 120 s with respect to the exposure time.
  • the liquid crystal panel has a large voltage difference between 5% and 0% of the transmittance. Therefore, the liquid crystal panel formed by the exposure time of 15s, 30s, 45s, and 60s has more gray scales.
  • Fig. 15 is a view showing the relationship between exposure time and VHR in a liquid crystal panel produced by a method of fabricating a liquid crystal panel according to a second embodiment of the present invention.
  • the above liquid crystal panel was subjected to a VHR test under the following conditions: a temperature of 20 ⁇ 2 ° C, a voltage of ⁇ 5 V, a pulse width of 10 ms, and a voltage holding time of 166.7 ms. From the test results of Fig. 15, it is known that the exposure time has little effect on VHR.
  • Fig. 16 is a view showing the relationship between the exposure time of the liquid crystal panel and the residual ion density produced by the method for fabricating the liquid crystal panel according to the second embodiment of the present invention. Since the polymer monomer added in the liquid crystal molecules is exposed, some impurity ions affecting the liquid crystal panel are generated. Therefore, after the liquid crystal panel is made, the liquid crystal panel needs to be tested for ion concentration. The test conditions are: temperature is 20 ⁇ 2 ° C, voltage is 5 V, waveform is sawtooth wave, and frequency is 0.01 Hz. As apparent from Fig. 16, the ion density remaining in the liquid crystal panel did not increase as the exposure time increased as a whole.

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Description

液晶面板的制作方法
技术领域
本发明涉及液晶显示技术领域，尤其涉及一种液晶面板的制作方法。
背景技术
液晶显示器（Liquid Crystal Display，LCD）是利用液晶材料的特性来显示图像的一种平板显示装置（Flat Panel Display，FPD），其相较于其他显示装置而言具轻薄、低驱动电压及低功耗等优点，已经成为整个消费市场上的主流产品。
液晶面板是液晶显示器最主要的组成配件，其包括真空贴合的TFT阵列基板、CF基板、设置在两者之间的液晶层及配向膜。该配向膜可以设置在TFT阵列基板和/或CF基板上，用于控制液晶层的液晶分子的预定的初始状态排列，从而影响液晶面板的显示特性。因此，对配向膜的控制极其重要。
现有技术中，液晶面板中配向膜的一种制作方法是，在制作TFT阵列基板及CF基板的同时，在TFT阵列基板以及CF基板的内表面涂覆配向液，以形成配向膜。液晶面板中配向膜的另一种制作方法是，将用于聚合物配向的单体与液晶分子一起注入至真空贴合后的液晶面板内，并照射光线，使其固化，因此在TFT阵列基板与CF基板的内表面上，聚合物单体将形成配向膜，并引导液晶分子进行有规则的排列。
上述第一种制作方法中，涂覆配向液时，极容易产生静电及涂覆刷携带的杂质，而对液晶面板造成损坏；第二种制作方法虽然是非接触式形成配向膜，但是聚合物单体对于光线的吸收较敏感，所以通过光线照射形成配向膜时，不同的制程将对液晶面板的光学特性、可靠度及产能都将产生重要的影响。
发明内容
本发明的主要目的是提供一种液晶面板的制作方法，旨在使得制成的液晶面板的可靠度及光学特性更佳。
本发明提供了一种液晶面板的制作方法，包括以下步骤：
在液晶中加入用于配向的聚合物单体后，将液晶注入真空贴合的TFT阵列基板与CF基板之间，形成液晶面板；
对液晶面板进行曝光处理，所述曝光的光线频谱在300-450nm之间，波长在300-400nm时的放射照度为10-30mW/cm2，对液晶面板的曝光时间为30-50s；
对曝光处理后的液晶面板进行固化处理，同时对液晶面板施加固化电压。
优选地，所述曝光的光线的波长在300-400nm时的放射照度为20 mW/cm2。
优选地，所述对液晶面板施加固化电压为方波电压或者直流电压，而且其电压有效值为10-20V。
优选地，所述对液晶面板施加的固化电压的电压有效值为15V。
优选地，所述对曝光处理后的液晶面板进行固化处理的同时还执行步骤：
对曝光处理后的液晶面板进行加热处理，其加热的温度为30-50℃。
优选地，所述对曝光处理后的液晶面板进行加热的温度为40℃。
优选地，所述对液晶面板进行曝光处理的步骤之前还包括：
开启曝光光源，并对其发出的光线进行过滤，获得频谱在300-450nm之间的光线，且波长在300-400nm时的放射照度为10-30mW/cm2。
优选地，所述曝光的光线为：
主波长为340-350nm，1/2亮高宽为52-62nm，1/3亮高宽为70-80nm。
优选地，所述曝光的光线由准分子光源产生，其中准分子包括KrF、ArP、NeF和XeCl中的任一种。
本发明还提供了另一种液晶面板的制作方法，包括以下步骤：
在液晶中加入用于配向的聚合物单体后，将液晶注入真空贴合的TFT阵列基板与CF基板之间，形成液晶面板；
对液晶面板进行曝光处理，所述曝光的光线频谱在300-450nm之间，波长在300-400nm时的放射照度为5-15mW/cm2，对液晶面板的曝光时间为40-60s；
对曝光处理后的液晶面板进行固化处理，同时对液晶面板施加固化电压。
优选地，所述曝光的光线的波长在300-400nm时的放射照度为10 mW/cm2。
优选地，所述对液晶面板施加固化电压为方波电压或者直流电压，而且其电压有效值为10-20V。
优选地，所述对液晶面板施加的固化电压的电压有效值为15V。
优选地，所述对曝光处理后的液晶面板进行固化处理的同时还执行步骤：
对曝光处理后的液晶面板进行加热处理，其加热的温度为30-50℃。
优选地，所述对曝光处理后的液晶面板进行加热的温度为40℃。
优选地，所述对液晶面板进行曝光处理的步骤之前还包括：
开启曝光光源，并对其发出的光线进行过滤，获得频谱在300-450nm之间的光线，且波长在300-400nm时的放射照度为5-15mW/cm2。
优选地，所述曝光的光线为：
主波长为315-325nm，1/2亮高宽为35-45nm，1/3亮高宽为44-54nm。
优选地，所述曝光的光线由准分子光源产生，其中准分子包括KrF、ArP、NeF和XeCl中的任一种。
本发明采用合适的光线结合与其相应的制程，使得该液晶面板在对比度及液晶响应度上的效果更佳。
附图说明
图1是本发明液晶面板的制作方法第一实施例的流程示意图；
图2是本发明液晶面板的制作方法第一实施例中采用的光线的频谱示意图；
图3是本发明第一实施例的液晶面板的制作方法所制成的液晶面板中对比度与曝光时间的关系示意图；
图4时本发明第一实施例的液晶面板的制作方法所制成的液晶面板中液晶响应速度与曝光时间的关系示意图；
图5是本发明第一实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VT曲线之间的关系示意图；
图6是图5中的局部放大示意图；
图7是本发明第一实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VHR之间的关系示意图；
图8是本发明第一实施例的液晶面板的制作方法所制成的液晶面板曝光时间与残留的离子密度之间的关系示意图；
图9是本发明液晶面板的制作方法第二实施例的流程示意图；
图10是本发明液晶面板的制作方法第二实施例中采用的光线的频谱示意图；
图11是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中对比度与曝光时间的关系示意图；
图12是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中液晶响应速度与曝光时间的关系示意图；
图13是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VT曲线之间的关系示意图；
图14是图13中的局部放大示意图；
图15是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VHR之间的关系示意图；
图16是本发明第二实施例的液晶面板的制作方法所制成的液晶面板曝光时间与残留的离子密度之间的关系示意图。
本发明目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
具体实施方式
以下将结合附图及实施例，对实现发明目的的技术方案作详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
参照图1，图1是本发明液晶面板的制作方法第一实施例的流程示意图。该液晶面板的制作方法包括以下步骤：
步骤S101、在液晶中加入用于配向的聚合物单体后，将液晶注入真空贴合的TFT阵列基板与CF基板之间，形成液晶面板；
在一般的液晶中加入用于配向的聚合物单体，使得聚合物单体在后续的光照下形成配向聚合物层，从而引导液晶分子进行一定的排列。
步骤S102、对液晶面板进行曝光处理，所述照射的光线的频谱范围在300 -450nm之间，且波长在300-400nm时的放射照度为10-30mW/cm2，所述曝光时间为30-50s；
对液晶面板进行曝光处理，使得液晶分子在聚合物单体的作用下进行规则的排列。例如液晶分子的长轴与液晶面板的基板垂直，或者液晶分子的长轴与液晶面板的基板呈一倾斜角，或者液晶分子的长轴与液晶面板的基板平行。在本发明实施例中，液晶分子的长轴与液晶面板的基板呈垂直排列。如图2所示，图2是本发明液晶面板的制作方法第一实施例中采用的光线的频谱示意图。该曝光处理所利用的光线频谱范围在300-450nm内，且波长在300-400nm时的放射照度为10-30mW/cm2。其中波长在300-400nm时的放射照度优选为20 mW/cm2。
步骤S103、对曝光处理后的液晶面板进行固化处理，同时对液晶面板施加固化电压。
液晶面板包括TFT阵列基板、CF基板、设置TFT阵列基板及CF基板之间的液晶层，所述TFT阵列基板上设置像素电极，所述CF基板上设置公共电极。当对液晶面板施加电压时，像素电极与公共电极之间将形成电磁场，该电磁场使得液晶分子偏转一定角度。因此，通过施加固化电压将液晶分子形成一定倾斜角的偏转后，再将其固化，从而下次对液晶面板施加驱动电压时，该液晶分子可以快速偏转至合适的位置，进一步加快了液晶分子的响应速度。该固化电压可以为方波电压或者直流电压，而且电压有效值为10-20V，优选地，该电压有效值为15V。
本发明实施例针对光线频谱在300-450nm之间，波长在300-400nm时的放射照度为10-30mW/cm2，而采用相应的制程对液晶面板进行曝光，从而使得该液晶面板在对比度及液晶响应度上的效果更佳。
如图3所示，图3是本发明第一实施例的液晶面板的制作方法所制成的液晶面板的对比度与曝光时间的关系示意图。其中，横轴表示曝光时间，纵轴表示对比度。由图3可知，曝光时间（即光照时间）在15-45s之间时，所制成的液晶面板的对比度几乎没有变化；而曝光时间超过45s时，曝光时间越长，所制成的液晶面板的对比度越低，因此曝光时间在15-45s之间所制成的液晶面板的对比度更佳。
如图4所示，图4是本发明第一实施例的液晶面板的制作方法所制成的液晶面板的液晶响应速度与曝光时间的关系示意图。其中，横轴表示曝光时间，纵轴表示液晶响应速度。该液晶响应速度的快慢可以由10%亮度至90%亮度之间所经历的时间的长短来反映，包括上升经历的时间及下降经历的时间。由于亮度与液晶面板的驱动电压成正比，所以亮度的变化也反应了电压的变化。由图4可知，在电压的上升沿（rise time）时，曝光时间在15-30s时，曝光时间越长，所制成的液晶面板的液晶响应时间越短，即液晶响应速度越快；而曝光时间超过30s而形成的液晶面板的液晶响应速度几乎没有变化；在电压的下降沿（fall time）时，在曝光时间15-120s之间制成的液晶面板的液晶响应速度基本上保持不变。因此，曝光时间在30-120s之间时制成的液晶面板的液晶响应速度更佳。
所以，综合考虑液晶面板的对比度及液晶响应速度，可知采用图2所示的光线对液晶面板进行曝光时，曝光时间在30-50s时制成的液晶面板，在对比度及液晶响应速度上的效果更佳。优选地，该曝光时间可以为40s。
上述对液晶面板进行曝光处理后，可以将液晶面板放置在工作台上，并对其进行固化，且该工作台的固化温度为30-50℃，优选地，该固化温度为40℃。
上述曝光的光线可以为：主波长为340-350nm，1/2亮高宽为52-62nm，1/3亮高宽为70-80nm。其中，该1/2亮高宽指该光线照度的峰值的二分之一所对应的两个波长值的差，即宽度；1/3亮宽度指光线照度的峰值的三分之一所对应的两个波长值的差，即宽度。进行曝光的光线可采用一种准分子光源产生，准分子光源是通过准分子工作物质来制造高功率的紫外光线，其中准分子工作物质可为KrF、ArP、NeF和XeCl中的任一种。当然，进行曝光的光线也可以采用其他的光源产生，并同时设置一滤波器，用于过滤除上述曝光用的光线以外的其他光线。
参照图5及图6，图5是本发明第一实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VT曲线之间的关系示意图；图6是图5中的局部放大示意图。其中VT曲线的横轴为电压有效值，纵轴为穿透率，即VT曲线表示电压有效值与穿透率的关系。由图5及图6可知，曝光时间为15s、30s、45s时，穿透率由5%至0%之间变化时，液晶面板相对应的电压差值相对于曝光时间为60s、120s时在穿透率5%至0%之间液晶面板的电压差值要大，因此，曝光时间为15s、30s、45s而形成的液晶面板所控制的灰阶更多。
参照图7，图7是本发明第一实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VHR之间的关系示意图。对上述液晶面板进行VHR测试，其测试条件为：温度为20±2℃、电压为±5V、脉冲宽度为10ms、电压保持时间为166.7ms。该VHR是液晶的电压保持率。由图7的测试结果可知，曝光时间对VHR几乎没有影响。
参照图8，图8是本发明第一实施例的液晶面板的制作方法所制成的液晶面板曝光时间与残留的离子密度之间的关系示意图。由于在液晶分子中添加的聚合物单体在曝光后，将产生一些影响液晶面板的杂质离子。所以，在液晶面板制成后，需对液晶面板进行离子浓度的测试，其测试条件为：温度为20±2℃，电压为5V，波形为锯齿波，频率为0.01Hz。由图8可知，液晶面板残留的离子密度整体上并没有随着曝光时间的增加而增大。
参照图9，图9是本发明液晶面板的制作方法第二实施例的流程示意图。该液晶面板的制作方法包括以下步骤：
步骤S201、在液晶中加入用于配向的聚合物单体后，将液晶注入真空贴合的TFT阵列基板与CF基板之间，形成液晶面板；
步骤S202、对液晶面板进行曝光处理，所述曝光的光线频谱在300-450nm之间，波长在300-400nm时的放射照度为5-15mW/cm2，对液晶面板的曝光时间为40-60s；
步骤S203、对曝光处理后的液晶面板进行固化处理，同时对液晶面板施加固化电压。
与上述方法实施例的区别在于，本实施例液晶面板的制作方法中，对面板进行曝光的曝光的光线的光线频谱在300-450nm之间，波长在300-400nm时的放射照度为5-15mW/cm2，如图10所示，图10是本发明液晶面板的制作方法第二实施例中采用的光线的频谱示意图。其中，波长在300-400nm时的放射照度可优选为10 mW/cm2。针对该光线进行曝光时，其曝光的时间将为40-60s。该曝光的时间优选为50s。步骤S203中对液晶面板施加的固化电压也可以为方波电压或者直流电压，而且电压有效值为10-20V。该电压有效值为15V。
本发明针对光线频谱在300-450nm之间，波长在300-400nm时的放射照度为5-15mW/cm2，而采用相应的制程对液晶面板进行曝光，从而使得该液晶面板在对比度及液晶响应度上的效果更佳。
如图11所示，图11是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中对比度与曝光时间的关系示意图。其中，横轴表示曝光时间，纵轴表示对比度。由图11可知，曝光时间（即光照时间）在15-60s之间时，所制成的液晶面板的对比度几乎没有变化（保持在4500左右）；而曝光时间超过60s时，曝光时间越长，所制成的液晶面板的对比度越低，因此曝光时间在15-60s之间所制成的液晶面板的对比度更佳。
如图12所示，图12是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中液晶响应速度与曝光时间的关系示意图。其中，横轴表示曝光时间，纵轴表示液晶响应速度。该液晶响应速度的快慢可以由10%亮度至90%亮度之间所经历的时间的长短来反映，包括上升经历的时间及下降经历的时间。由于亮度与液晶面板的驱动电压成正比，所以亮度的变化也反应了电压的变化。由图12可知，在电压的上升沿（rise time）时，曝光时间越长，所制成的液晶面板的液晶响应时间越短，即液晶响应速度越快；在电压的下降沿（fall time）时，在曝光时间30-45s之间液晶响应速度随着曝光时间的延长而加快，而在曝光时间45s后基本上保持不变。因此，曝光时间在45-120s之间时制成的液晶面板的液晶响应速度更佳。
所以，综合考虑液晶面板的对比度及液晶响应速度，可知采用图10所示的光线对液晶面板进行曝光时，曝光时间在40-60s时制成的液晶面板，在对比度及液晶响应速度上的效果更佳。优选地，该曝光时间可以为50s。
上述对液晶面板进行曝光处理后，可以将液晶面板放置在工作台上，并对其进行固化，且该工作台的固化温度为30-50℃，优选地，该固化温度为40℃。
上述曝光的光线可以为：主波长为315-325nm，1/2亮高宽为35-45nm，1/3亮高宽为44-54nm。其中，该1/2亮高宽指该光线照度的峰值的二分之一所对应的两个波长值的差，即宽度；1/3亮宽度指光线照度的峰值的三分之一所对应的两个波长值的差，即宽度。进行曝光的光线可采用一种准分子光源产生，准分子光源是通过准分子工作物质来制造高功率的紫外光线，其中准分子工作物质可为KrF、ArP、NeF和XeCl中的任一种。当然，进行曝光的光线也可以采用其他的光源产生，并同时设置一滤波器，用于过滤除上述曝光用的光线以外的其他光线。
参照图13及图14，图13是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VT曲线之间的关系示意图；图14是图13中的局部放大示意图。其中VT曲线的横轴为电压有效值，纵轴为穿透率，即VT曲线表示电压有效值与穿透率的关系。由图13及图14可知，曝光时间为15s、30s、45s、60s时，且穿透率由5%至0%之间变化时，液晶面板相对应的电压差值相对于曝光时间为120s时在穿透率5%至0%之间液晶面板的电压差值要大，因此，曝光时间为15s、30s、45s、60s而形成的液晶面板所控制的灰阶更多。
参照图15，图15是本发明第二实施例的液晶面板的制作方法所制成的液晶面板中曝光时间与VHR之间的关系示意图。对上述液晶面板进行VHR测试，其测试条件为：温度为20±2℃、电压为±5V、脉冲宽度为10ms、电压保持时间为166.7ms。由图15的测试结果可知，曝光时间对VHR几乎没有影响。
参照图16，图16是本发明第二实施例的液晶面板的制作方法所制成的液晶面板曝光时间与残留的离子密度之间的关系示意图。由于在液晶分子中添加的聚合物单体在曝光后，将产生一些影响液晶面板的杂质离子。所以，在液晶面板制成后，需对液晶面板进行离子浓度的测试，其测试条件为：温度为20±2℃，电压为5V，波形为锯齿波，频率为0.01Hz。由图16可知，液晶面板残留的离子密度整体上并没有随着曝光时间的增加而增大。
以上所述仅为本发明的优选实施例，并非因此限制其专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (18)

  1. 一种液晶面板的制作方法，其特征在于，包括以下步骤：
    在液晶中加入用于配向的聚合物单体后，将液晶注入真空贴合的TFT阵列基板与CF基板之间，形成液晶面板；
    对液晶面板进行曝光处理，所述曝光的光线频谱在300-450nm之间，波长在300-400nm时的放射照度为10-30mW/cm2，对液晶面板的曝光时间为30-50s；
    对曝光处理后的液晶面板进行固化处理，同时对液晶面板施加固化电压。
  2. 根据权利要求1所述的液晶面板的制作方法，其特征在于，所述曝光的光线的波长在300-400nm时的放射照度为20 mW/cm2。
  3. 根据权利要求1所述的液晶面板的制作方法，其特征在于，所述对液晶面板施加固化电压为方波电压或者直流电压，而且其电压有效值为10-20V。
  4. 根据权利要求3所述的液晶面板的制作方法，其特征在于，所述对液晶面板施加的固化电压的电压有效值为15V。
  5. 据权利要求3所述的液晶面板的制作方法，其特征在于，所述对曝光处理后的液晶面板进行固化处理的同时还执行步骤：
    对曝光处理后的液晶面板进行加热处理，其加热的温度为30-50℃。
  6. 根据权利要求5所述的液晶面板的制作方法，其特征在于，所述对曝光处理后的液晶面板进行加热的温度为40℃。
  7. 据权利要求5所述的液晶面板的制作方法，其特征在于，所述对液晶面板进行曝光处理的步骤之前还包括：
    开启曝光光源，并对其发出的光线进行过滤，获得频谱在300-450nm之间的光线，且波长在300-400nm时的放射照度为10-30mW/cm2。
  8. 据权利要求1所述的液晶面板的制作方法，其特征在于，所述曝光的光线为：
    主波长为340-350nm，1/2亮高宽为52-62nm，1/3亮高宽为70-80nm。
  9. 根据权利要求1所述的液晶面板的制作方法，其特征在于，所述曝光的光线由准分子光源产生，其中准分子包括KrF、ArP、NeF和XeCl中的任一种。
  10. 种液晶面板的制作方法，其特征在于，包括以下步骤：
    在液晶中加入用于配向的聚合物单体后，将液晶注入真空贴合的TFT阵列基板与CF基板之间，形成液晶面板；
    对液晶面板进行曝光处理，所述曝光的光线频谱在300-450nm之间，波长在300-400nm时的放射照度为5-15mW/cm2，对液晶面板的曝光时间为40-60s；
    对曝光处理后的液晶面板进行固化处理，同时对液晶面板施加固化电压。
  11. 根据权利要求10所述的液晶面板的制作方法，其特征在于，所述曝光的光线的波长在300-400nm时的放射照度为10 mW/cm2。
  12. 根据权利要求10所述的液晶面板的制作方法，其特征在于，所述对液晶面板施加固化电压为方波电压或者直流电压，而且其电压有效值为10-20V。
  13. 根据权利要求12所述的液晶面板的制作方法，其特征在于，所述对液晶面板施加的固化电压的电压有效值为15V。
  14. 据权利要求12所述的液晶面板的制作方法，其特征在于，所述对曝光处理后的液晶面板进行固化处理的同时还执行步骤：
    对曝光处理后的液晶面板进行加热处理，其加热的温度为30-50℃。
  15. 根据权利要求14所述的液晶面板的制作方法，其特征在于，所述对曝光处理后的液晶面板进行加热的温度为40℃。
  16. 据权利要求10所述的液晶面板的制作方法，其特征在于，所述对液晶面板进行曝光处理的步骤之前还包括：
    开启曝光光源，并对其发出的光线进行过滤，获得频谱在300-450nm之间的光线，且波长在300-400nm时的放射照度为5-15mW/cm2。
  17. 据权利要求10所述的液晶面板的制作方法，其特征在于，所述曝光的光线为： 主波长为315-325nm，1/2亮高宽为35-45nm，1/3亮高宽为44-54nm。
  18. 根据权利要求10所述的液晶面板的制作方法，其特征在于，所述曝光的光线由准分子光源产生，其中准分子包括KrF、ArP、NeF和XeCl中的任一种。
PCT/CN2012/075625 2012-04-19 2012-05-17 液晶面板的制作方法 Ceased WO2013155753A1 (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101266366A (zh) * 2008-05-20 2008-09-17 友达光电股份有限公司 液晶配向方法
CN101329479A (zh) * 2008-08-05 2008-12-24 友达光电股份有限公司 液晶显示面板及其制作方法
CN101460888A (zh) * 2006-08-10 2009-06-17 夏普株式会社 液晶显示装置
CN101699334A (zh) * 2009-09-30 2010-04-28 深超光电（深圳）有限公司 液晶显示面板及其制作方法
WO2010097992A1 (ja) * 2009-02-26 2010-09-02 シャープ株式会社 光照射装置、光照射方法およびこれらを用いて製造された液晶表示パネル
CN102122100A (zh) * 2010-12-31 2011-07-13 友达光电股份有限公司 聚合物稳定配向型液晶显示面板的制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101460888A (zh) * 2006-08-10 2009-06-17 夏普株式会社 液晶显示装置
CN101266366A (zh) * 2008-05-20 2008-09-17 友达光电股份有限公司 液晶配向方法
CN101329479A (zh) * 2008-08-05 2008-12-24 友达光电股份有限公司 液晶显示面板及其制作方法
WO2010097992A1 (ja) * 2009-02-26 2010-09-02 シャープ株式会社 光照射装置、光照射方法およびこれらを用いて製造された液晶表示パネル
CN101699334A (zh) * 2009-09-30 2010-04-28 深超光电（深圳）有限公司 液晶显示面板及其制作方法
CN102122100A (zh) * 2010-12-31 2011-07-13 友达光电股份有限公司 聚合物稳定配向型液晶显示面板的制造方法

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