WO2013146137A1 - Plaque empêchant les dépôts destinée à un dispositif de formation de film sous vide, dispositif de formation de film sous vide et procédé de formation de film sous vide - Google Patents

Plaque empêchant les dépôts destinée à un dispositif de formation de film sous vide, dispositif de formation de film sous vide et procédé de formation de film sous vide Download PDF

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Publication number
WO2013146137A1
WO2013146137A1 PCT/JP2013/056105 JP2013056105W WO2013146137A1 WO 2013146137 A1 WO2013146137 A1 WO 2013146137A1 JP 2013056105 W JP2013056105 W JP 2013056105W WO 2013146137 A1 WO2013146137 A1 WO 2013146137A1
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Prior art keywords
film forming
vacuum film
forming apparatus
plate
deposition
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PCT/JP2013/056105
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English (en)
Japanese (ja)
Inventor
俊次 黒岡
高橋　保夫
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富士フイルム株式会社
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Publication of WO2013146137A1 publication Critical patent/WO2013146137A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Definitions

  • the present invention relates to a deposition preventing plate used in a vacuum film forming apparatus such as a vacuum vapor deposition apparatus or a sputtering apparatus. Specifically, the present invention relates to a deposition preventing plate for a vacuum film forming apparatus that can prevent peeling of the deposited film forming material.
  • Vacuum film formation methods such as vacuum deposition, sputtering, and plasma CVD are used for manufacturing semiconductor devices, electronic component materials, and various functional films.
  • a thin film of conductive metal such as gold, silver, copper, aluminum, titanium, and molybdenum is formed on a semiconductor substrate or glass substrate by a vacuum film formation method. Electrodes and wiring are produced.
  • the vacuum film-forming apparatus used for the vacuum film-forming method has an anti-adhesion covering the inner wall surface of the apparatus in order to prevent the deposition and deposition of film-forming materials on unnecessary places other than the substrate in the apparatus.
  • a plate is provided.
  • the film forming material attached to the inner wall surface of the vacuum film forming apparatus not provided with the deposition plate or the deposition plate is peeled off to generate particles. It is known that when these particles adhere to a substrate to be deposited, the quality of the product is deteriorated or defective.
  • the surface of the deposition preventive plate is roughened in order to prevent the deposition material deposited on the deposition preventing plate from peeling off and forming particles.
  • a sprayed film having a surface roughness Ra of about 10 to 20 ⁇ m, for example, is formed on the surface of the deposition preventing plate, and the height of the sprayed film is higher than the surface roughness of the sprayed film itself. Describes that the film-forming material deposited on the surface of the adhesion-preventing plate is prevented from being peeled off by forming irregularities of about 50 to 2000 ⁇ m ([0016] [0041]).
  • Patent Document 2 large irregularities having a surface roughness Ra of about 200 to 2000 ⁇ m are formed on the surface of the adhesion-preventing plate, and small irregularities having a surface roughness Ra of about 10 to 100 ⁇ m are superimposed on the large irregularities. It is described that the film forming material deposited on the surface of the deposition preventing plate is prevented from being peeled off ([Claim 1] [Claim 2] [Claim 8] [0023]).
  • Patent Document 3 describes a roughening treatment method that can be used for roughening treatment of a jig such as an adhesion-preventing plate of a thin film manufacturing apparatus. Specifically, the surface roughness Ra is set to 2 to 2. An aluminum surface roughening method for roughening to 20 ⁇ m is described ([claim 3] [0030]).
  • the inventors of the present invention have studied the adhesion preventing plates described in Patent Documents 1 to 3, and it is clear that even if the surface is roughened, the effect of preventing the film-forming material from peeling off is not sufficient. It was.
  • the present invention provides an adhesion preventing plate for a vacuum film forming apparatus that is excellent in the effect of preventing the film forming material from peeling off, a method for manufacturing the same, and a vacuum film forming apparatus and a vacuum film forming method using the adhesion preventing plate. Objective.
  • the present inventor has a concavo-convex structure including a recess having a specific average opening diameter, and providing a surface having an arithmetic average roughness Ra within a predetermined range.
  • the inventors have found that the effect of preventing the film-forming material from peeling off is high, and completed the present invention. That is, it has been found that the above object can be achieved by the following configuration.
  • a deposition plate for a vacuum film forming apparatus for preventing adhesion of a film forming material to an unnecessary position
  • An adhesion-preventing plate for a vacuum film-forming apparatus made of aluminum, having a surface with a concavo-convex structure including recesses having an average opening diameter of 0.01 to 9 ⁇ m, and having an arithmetic average roughness Ra of 0.20 ⁇ m or more on the surface.
  • the surface area ratio ⁇ S is an actual area S x obtained by an approximate three-point method from three-dimensional data obtained by measuring 256 ⁇ 256 points on the surface of 25 ⁇ m ⁇ 25 ⁇ m using an atomic force microscope, It is a value obtained from the geometric measurement area S 0 by the following formula (i), and the steepness a45 has an inclination with an angle of 45 ° or more with respect to the actual area S x (an inclination of 45 ° or more).
  • the area ratio of the part. ⁇ S (S x ⁇ S 0 ) / S 0 ⁇ 100 (%) (i)
  • the concavo-convex structure is a concavo-convex structure including recesses having an average opening diameter of 0.5 to 9 ⁇ m, or a concavo-convex structure including recesses having an average opening diameter of 0.01 to 0.3 ⁇ m.
  • the concavo-convex structure is a concavo-convex structure in which a concavo-convex structure including concave portions having an average opening diameter of 0.01 to 0.3 ⁇ m is superimposed on a concavo-convex structure including concave portions having an average opening diameter of 0.5 to 9 ⁇ m.
  • a deposition preventing plate for a vacuum film-forming apparatus To (3), a deposition preventing plate for a vacuum film-forming apparatus. (5) The deposition preventing plate for a vacuum film forming apparatus according to any one of (1) to (4), wherein the surface is composed of an anodized aluminum film. (6) The deposition plate for a vacuum film forming apparatus according to (5), wherein the anodized film has micropores. (7) The deposition for vacuum film forming apparatus according to any one of (1) to (6), wherein a concavo-convex structure including a recess having an average opening diameter of 0.01 to 9 ⁇ m is superimposed on a larger concavo-convex structure. Board.
  • a manufacturing method for manufacturing a deposition plate for a vacuum film forming apparatus for preventing adhesion of a film forming material to an unnecessary position A method for producing an adhesion-preventing plate for a vacuum film-forming apparatus, comprising a step of subjecting the surface of an aluminum plate to an electrochemical roughening process to form a concavo-convex structure including a concave portion having an average opening diameter of 0.01 to 9 ⁇ m.
  • the deposition plate for a vacuum film forming apparatus according to (11) which has a step of performing anodizing treatment and forming an anodic oxide film of aluminum on the surface after the step of performing the electrochemical surface roughening treatment. Production method.
  • the vacuum deposition apparatus for vacuum film-forming apparatuses excellent in the peeling prevention effect of film-forming material, its manufacturing method, and the vacuum film-forming apparatus and vacuum film-forming method using this deposition board are provided. it can.
  • the concave portion with an average opening diameter of 0.01 to 9 ⁇ m included in the concavo-convex structure holds the film-forming material adhering to the adhesion-preventing plate very strongly due to the anchor effect or the like. However, it is considered that the generation of particles due to peeling can be suppressed.
  • an adhesion preventing plate for the vacuum deposition apparatus of the present invention
  • FIG. 1 conceptually shows an example of a vacuum film forming apparatus of the present invention, which implements an example of the vacuum film forming method of the present invention.
  • a vacuum film forming apparatus 10 according to the present invention shown in FIG. 1 forms a film on the surface of a substrate Z that is a film forming member by vacuum vapor deposition, and has a deposition plate 12 according to the present invention to be described later.
  • the vacuum film-forming method of the present invention uses the vacuum film-forming apparatus 10 of the present invention having the adhesion-preventing plate 12 of the present invention to form Ti, Zr, Nb, Ta, Cr, Mo, One element selected from W, Pt, Au, Ag, Fe, Ni, Mn, Sn, Zn, Co, Al, Cu and Si, or an alloy thereof is formed.
  • the vacuum film forming method and the vacuum film forming apparatus of the present invention are not limited to those which form a film on the surface of the substrate Z by vacuum vapor deposition as shown in the illustrated example. That is, the vacuum film forming method and the vacuum film forming apparatus of the present invention include various known CVD (chemical vapor deposition) and PVD (physical vapor) methods such as sputtering, CVD, plasma CVD, and ion plating. Deposition can be applied to vacuum deposition by physical vapor deposition.
  • CVD chemical vapor deposition
  • PVD physical vapor
  • the film forming conditions are not particularly limited, depending on the film forming method, the film to be formed, the film forming rate, the film thickness of the film to be formed, and the like. And may be set as appropriate.
  • a vacuum film forming apparatus 10 includes a vacuum chamber 14, a vapor deposition source 16 and a substrate holder 18 disposed in the vacuum chamber 14, and a vacuum pump, as in a known vacuum vapor deposition apparatus. And 20. And the vacuum film-forming apparatus 10 of this invention covers the inner wall face of the vacuum chamber 14, and the adhesion prevention board 12 of this invention is provided.
  • the vacuum film forming apparatus 10 of the present invention is basically the same as a known vacuum deposition apparatus except that the deposition preventing plate 12 of the present invention is used.
  • the vapor deposition source 16 is a known vapor deposition source (evaporation source) that is filled with a film forming material and melts and evaporates.
  • the substrate holder 18 is also a known substrate holder that holds the substrate Z by a known means.
  • the vacuum pump 20 is also a known vacuum pump for evacuating the vacuum chamber 14 and maintaining a predetermined film forming pressure.
  • the vacuum film-forming apparatus 10 of this invention may have a rotation means which rotates the substrate holder 18 (substrate
  • the vacuum film forming apparatus 10 of the present invention covers the inner wall surface of the vacuum chamber 14 and is provided with the deposition preventing plate 12 of the present invention.
  • the adhesion preventing plate 12 an upper surface adhesion preventing plate 12a covering the upper surface (ceiling surface) in the vacuum chamber 14, a side adhesion preventing plate 12b covering the same side surface, and a lower surface covering the same lower surface (floor surface).
  • a protection plate 12c is provided.
  • the vacuum film forming apparatus 10 in the illustrated example covers almost the entire inner wall surface of the vacuum chamber 14 with the deposition preventing plate 12 of the present invention, except for the region corresponding to the substrate holder 18 and the vapor deposition source 16. .
  • the present invention is not limited to this.
  • only the side surface protection plate 12b may be provided, or only the top surface protection plate 12a may be provided.
  • the deposition preventive plate 12 of the present invention is made of aluminum, when a metal film such as Au or Pt or an alloy film is formed on the substrate Z, the deposition material attached to the deposition preventive plate 12 is separated. And can be recovered. For this reason, it is advantageous to cover the inner wall surface of the vacuum chamber 14 with an anti-adhesion plate as much as possible in terms of the recovery rate of the film forming material that has not been formed on the substrate Z.
  • the vacuum film-forming method and the vacuum film-forming apparatus of the present invention there is a possibility that film-forming materials other than the inner wall surface of the vacuum chamber 14 such as the back surface of the substrate holder 18 adhere and deposit as necessary.
  • the part may be covered with the deposition preventing plate 12 of the present invention.
  • the method of attaching the deposition plate 12 there is no particular limitation on the method of attaching the deposition plate 12, and a known plate-like object or sheet shape that is used as a method of attaching the deposition plate in the vacuum deposition apparatus.
  • Various attachment methods can be used.
  • a method of adhering the deposition preventing plate 12 in the vacuum chamber 14 using an adhesive tape having sufficient heat resistance such as Kapton tape is exemplified.
  • a known mechanical plate-like or sheet-like attachment method such as a method using a screw or an attachment jig or a method using a hook or the like can be used.
  • the deposition preventing plate 12 is a cylindrical object having sufficient rigidity, the deposition preventing plate 12 is attached in the vacuum chamber 14 by surrounding the evaporation source and placing it on the lower surface of the vacuum chamber 14. Also good.
  • the adhesion-preventing plate of the present invention is an adhesion-preventing plate for a vacuum film forming apparatus for preventing adhesion of a film forming material to an unnecessary position in the vacuum film forming apparatus, and is made of aluminum and has an average opening diameter of 0. 1.
  • An adhesion-preventing plate having a surface with a concavo-convex structure including recesses of .01 to 9 ⁇ m and an arithmetic average roughness Ra of the surface of 0.20 ⁇ m or more.
  • the deposition preventing plate 12 of the present invention is not particularly limited as long as it is made of aluminum made of pure aluminum or an aluminum alloy, and the shape is preferably a plate shape or a sheet shape.
  • an aluminum base material various aluminum plate-like materials and sheet-like materials such as an aluminum foil commercially available as a deposition preventing plate for a vacuum film forming apparatus can be used.
  • the aluminum constituting the base material has a purity of 97% or more in order to prevent impurities in the aluminum from being mixed into the recovered material and reducing the purity of the recovered material when recovering the deposit. Is preferable, 98% or more is more preferable, 99% or more is further preferable, and 99.5% or more is particularly preferable.
  • the thickness of the deposition preventing plate 12 of the present invention is not particularly limited, and the configuration of the vacuum film forming apparatus to be mounted, the method of using the deposition preventing plate (disposable type or the type to be reused after washing), the deposition preventing plate. According to the size, film forming method, film forming conditions, etc., sufficient mechanical strength and thermal strength can be secured, and a thickness that is easy to handle when mounting in the vacuum chamber 14 is appropriately set. You only have to set it. Moreover, it is preferable that the deposition preventing plate 12 of the present invention has a certain degree of flexibility from the viewpoint of covering the entire inner surface of the vacuum chamber 14 without difficulty according to the configuration of the vacuum film forming apparatus 10.
  • the deposition preventing plate of the present invention is made of aluminum, in the case of a disposable use, after the film formation was finished, the aluminum and the film formation material were separated and the film was not formed on the substrate Z.
  • the film forming material can be collected.
  • the thickness of the deposition preventing plate 12 of the present invention is preferably about 30 to 300 ⁇ m.
  • ⁇ Surface> 2 to 4 are schematic cross-sectional views showing an example of the uneven structure on the surface of the adhesion-preventing plate of the present invention.
  • the adhesion-preventing plate 12 of the present invention has the surface of the concavo-convex structure 30 including the dents 30a having an average opening diameter of 0.01 to 9 ⁇ m.
  • the opening diameter of the recessed part 30a is the diameter of the recessed part 30a (circumferentially connected to the periphery forming the recessed part 30a), and the average opening diameter is the average thereof.
  • the concavo-convex structure including the concave portion may be a wave-shaped structure as shown in FIG. 2, and is a repeating structure of the concave portion in which the convex portion is a flat portion of the surface as shown in FIG. There may be.
  • the deposition preventing plate 12 of the present invention has a concavo-convex structure including the recesses 30a having an average opening diameter of 0.01 to 9 ⁇ m, as described above, the film-forming material attached to the deposition preventing plate 12 has a very strong adhesion strength. It can be held on the adhesion preventing plate 12. That is, in the deposition preventing plate 12 of the present invention, the opening diameter is small by having a concavo-convex structure including a recess having a much smaller opening diameter than the conventional deposition preventing plate subjected to the roughening treatment. By obtaining a high anchoring effect by the recesses and increasing the adhesion strength, it is possible to prevent peeling of the deposited film forming material.
  • the average opening diameter of the recessed part 30 exceeds 9 micrometers, sufficient contact
  • the concavo-convex structure 30 including the concave portions 30a having an average opening diameter of 0.01 to 9 ⁇ m has the concavo-convex structure including the concave portions having an average opening diameter of 0.5 to 9 ⁇ m.
  • a structure hereinafter also referred to as “medium wave structure”
  • a concavo-convex structure including recesses having an average opening diameter of 0.01 to 0.3 ⁇ m hereinafter also referred to as “small wave structure”
  • a structure in which the medium wave structure and the small wave structure are superposed is preferable because the effect of preventing peeling of the film forming material is further improved.
  • a small wave structure 34 including a concave portion 34a having an average opening diameter of 0.01 to 0.3 ⁇ m is further superimposed on the medium wave structure 32 including a concave portion 32a having a thickness of 0.5 to 9 ⁇ m is preferable.
  • the average opening diameter of the recesses 32a in the medium wave structure 32 is obtained by photographing the surface of the deposition preventing plate from directly above at a magnification of 2000 using an electron microscope. In the obtained electron micrograph, the periphery is circular.
  • At least 50 consecutive recesses 32a are extracted, and the diameter (or the diameter of a circle inscribed in the recess 32a) is read as an opening diameter to calculate an average opening diameter.
  • the average opening diameter of the recesses 34a in the small wave structure 34 is obtained by photographing the surface of the deposition preventing plate from directly above at a magnification of 10,000 to 30,000 times using an electron microscope.
  • At least 50 recesses 34a (excluding the recesses 32a in the overlapping medium wave structure 32) are extracted, and the diameter (or the diameter of a circle inscribed in the recess 34a) is read as the opening diameter, and the average opening diameter Is calculated.
  • the average opening diameter of the recesses 32a constituting the medium wave structure 32 is preferably 0.5 to 5 ⁇ m, more preferably 1 to 5 ⁇ m, for the purpose of further improving the effect of preventing the film forming material from peeling off. More preferably, the thickness is 5 to 3 ⁇ m. Further, the depth of the concave portion 32a constituting the medium wave structure 32 is not particularly limited. In addition, since the deposition preventing plate of the present invention forms an uneven structure by subjecting the aluminum plate to an electrochemical roughening treatment, as shown in a manufacturing method of the deposition preventing plate described later, the depth of the recess 32a is reduced. This is considered to be substantially equal to the opening diameter of the recess 32a.
  • the average opening diameter of the recesses 34a constituting the small wave structure 34 is preferably 0.1 to 0.2 ⁇ m because the effect of preventing the film forming material from peeling off is further improved.
  • the average ratio of the depth to the opening diameter of the recesses 34a constituting the small wave structure 34 is preferably 0.2 to 0.5.
  • the average of the ratio of the depth to the opening diameter in the recess 34a is obtained by photographing the fractured surface of the adhesion-preventing plate at a magnification of 50000 times using a high-resolution scanning electron microscope (SEM). At least 20 recesses are extracted, the aperture diameter and depth are read, the ratio is obtained, and the average value is calculated.
  • the concave portions 30a constituting the concavo-convex structure are formed almost uniformly over the entire surface.
  • the adhesion prevention board 12 of this invention it is preferable to have 10 or more of the recessed parts 30a whose opening diameter is 0.5 micrometer or more among 0.003 mm ⁇ 2 > among recessed parts 30a.
  • the adhesion preventing plate 12 of the present invention has 20 or more per 0.003 mm 2 in the case of the concave portion 30a having an opening diameter of 5 ⁇ m or more in that a more excellent film-forming material peeling prevention effect is obtained. It is preferable to have 120 or less. Similarly, in the case of the recess 30a having an opening diameter of 2 ⁇ m or more, it is preferably 20 or more per 0.003 mm 2 , more preferably 50 or more, and preferably 1500 or less. Further, similarly, in the case of the recesses 30a having an opening diameter of 0.5 ⁇ m or more, it is preferable to have 30 or more per 0.003 mm 2 , and more preferably 150 or more.
  • the concavo-convex structure including the concave portions having an average opening diameter of 0.01 to 9 ⁇ m may be superimposed on a concavo-convex structure larger than the concavo-convex structure (hereinafter also referred to as “large wave structure”).
  • the concavo-convex structure including the concave portions having an average opening diameter of 0.5 to 9 ⁇ m may be superimposed on a large concavo-convex structure having concavo-convex portions having an average wavelength of 5 to 100 ⁇ m.
  • a large uneven structure having unevenness with an average wavelength of 5 to 100 ⁇ m is obtained by measuring a two-dimensional roughness with a stylus type roughness meter and measuring an average peak interval Sm defined in ISO 4287 five times.
  • the concavo-convex structure has an average value of 5 to 100 ⁇ m.
  • the arithmetic average roughness Ra of the surface of the deposition preventing plate 12 of the present invention is not particularly limited as long as it is 0.20 ⁇ m or more, preferably 0.25 ⁇ m or more, and more preferably 0.30 ⁇ m or more. Moreover, it is preferable that it is 8 micrometers or less, it is preferable that it is 2 micrometers or less, and it is more preferable that it is 1 micrometer or less. Specifically, the thickness is preferably about 0.25 to 0.9 ⁇ m, and more preferably 0.30 to 0.60 ⁇ m.
  • the surface roughness Ra is an arithmetic average roughness based on JIS B0601: 2001, measured using a stylus type surface roughness meter (for example, a surface roughness measuring machine SJ-401 manufactured by Mitutoyo Corporation). That's it.
  • the deposition preventing plate 12 of the present invention preferably has a surface area ratio ⁇ S of 5% or more and a steepness a45 of 3% or more, a surface area ratio ⁇ S of 30% or more and a steepness a45. More preferably, it is 25% or more, the surface area ratio ⁇ S is 40% or more, the steepness a45 is more preferably 30% or more, the surface area ratio ⁇ S is 45% or more, and the steepness is It is particularly preferable that a45 is 40% or more. In view of cost and the like, the surface area ratio ⁇ S is preferably 90% or less, and the steepness a45 is preferably 85% or less.
  • the surface area difference ⁇ S is one of the factors indicating the frequency of the uneven structure on the surface of the deposition preventing plate 12 of the present invention.
  • the steepness a45 is a factor representing the sharpness of the concavo-convex structure on the surface of the deposition preventing plate 12 of the present invention.
  • the surface shape is measured by an atomic force microscope (AFM) to obtain three-dimensional data.
  • the measurement can be performed, for example, under the following conditions. That is, cut the aluminum substrate into 1cm square size, set it on the horizontal sample stage on the piezo scanner, approach the sample surface with the cantilever, and when it reaches the region where the atomic force works, it scans in XY direction At that time, the surface shape (wave structure) of the sample is captured by the displacement of the piezoelectric element in the Z direction.
  • a piezo scanner that can scan 150 ⁇ m in the XY direction and 10 ⁇ m in the Z direction is used.
  • a cantilever having a resonance frequency of 130 to 170 kHz and a spring constant of 6 to 14 N / m (OMCL-AC200TS, manufactured by OLYMPUS) is used for measurement in the DFM mode (Dynamic Force Mode). Further, the reference plane is obtained by correcting the slight inclination of the sample by approximating the obtained three-dimensional data by least squares. The measurement is performed by measuring 256 ⁇ 256 points in a 25 ⁇ m ⁇ 25 ⁇ m range of the surface.
  • the resolution in the XY direction is 0.1 ⁇ m
  • the resolution in the Z direction is 1 nm
  • the scan speed is 15 ⁇ m / sec.
  • the three-dimensional data (f (x, y)) obtained above three adjacent points are extracted, and the sum of the areas of the minute triangles formed by the three points is obtained to obtain the actual area S x .
  • the surface area difference ⁇ S is obtained by the above formula (i) from the obtained real area S x and the geometric measurement area S 0 .
  • the number of reference points where the inclination of the micro triangle is 45 degrees or more is obtained by subtracting the number of all reference points (the number of all data points from 256 ⁇ 256 points that do not have two adjacent points in a predetermined direction). In other words, the area ratio a45 of the portion having the inclination of 45 degrees or more is calculated by dividing by 255).
  • Such a surface area ratio ⁇ S and steepness a45 can be measured using an atomic force microscope (atomic force microscope SPA400 manufactured by SII Nanotechnology (now Hitachi High-Tech Science)), as described in Examples described later. it can.
  • atomic force microscope atomic force microscope SPA400 manufactured by SII Nanotechnology (now Hitachi High-Tech Science)
  • the formed uneven structure is small, and evaluation in the nano-order such as an atomic force microscope (AFM) is possible. I need it.
  • AFM atomic force microscope
  • the concavo-convex structure to be formed is large, the piezo operating range in the AFM is over the range, and the concavo-convex becomes three-dimensional.
  • the terminal cannot follow and measurement is impossible.
  • a mechanical surface roughening process such as a brush grain method is performed, a large wave structure to be described later can be formed, but an uneven structure including a recess having an average opening diameter of 0.01 to 9 ⁇ m cannot be formed.
  • the surface of the deposition preventing plate 12 of the present invention is preferably composed of an anodized aluminum film.
  • anodized film By being composed of an anodized film, a large number of micropores called micropores can be retained on the surface. As a result, a higher anchor effect is obtained and the adhesion strength is increased, so that the film forming material attached to the deposition preventing plate 12 can be prevented from being peeled off.
  • the thickness of the anodized film is not limited, but is preferably 0.05 to 30 ⁇ m, and particularly preferably 0.25 to 5 ⁇ m.
  • the thickness of the anodized film By setting the thickness of the anodized film within the above range, the effect of having the anodized film on the surface of the deposition preventive plate can be obtained more suitably, and the film forming material is peeled off from the deposition preventive plate. Thereby, generation
  • the average diameter (average pore diameter) of the micropores in the anodized film is preferably 5 to 80 nm, and the average density (average pore density) is The number is preferably 50 to 750 / ⁇ m 2 .
  • the average pore diameter is determined by photographing the surface of the anodized film at a magnification of about 150,000 times using a field emission scanning electron microscope (FE-SEM), and observing the three fields of view with the obtained SEM photograph. And an average diameter is measured about arbitrary 100 micropores, The average value is made into the average pore diameter. Further, the average pore density is taken as an average pore density by extracting three fields of view of a 300 nm square from the above SEM photograph and counting the number of micropores therein to obtain an average value of the density.
  • FE-SEM field emission scanning electron microscope
  • the manufacturing method of the deposition preventing plate of the present invention is a manufacturing method for manufacturing the above-described deposition preventing plate of the present invention, wherein the surface of the aluminum plate is subjected to an electrochemical roughening treatment, and an average opening diameter of 0.01 to It is a manufacturing method having a step of forming a concavo-convex structure including a 9 ⁇ m concave portion (hereinafter also referred to as “concave-convex forming step”).
  • the manufacturing method of the deposition preventive plate of the present invention provides an anodizing treatment after the unevenness forming step from the viewpoint of forming an anodic oxide film on the surface of the above-described deposition preventive plate of the present invention, and an aluminum anode on the surface. It is preferable to have a step of forming an oxide film (hereinafter also referred to as “anodizing treatment step”). Furthermore, the manufacturing method of the adhesion prevention board of this invention has the process (henceforth an "annealing treatment process") which performs an annealing process after an anodizing process process from a viewpoint of the workability of an adhesion prevention board. Is preferred. Next, each process mentioned above is demonstrated about the manufacturing method of the deposition preventing board of this invention.
  • the concavo-convex forming step is a step in which the surface of the aluminum plate is subjected to an electrochemical roughening treatment to form the concavo-convex structure including the concave portions having the average opening diameter of 0.01 to 9 ⁇ m on the surface.
  • the electrochemical surface roughening treatment include a method of performing an electrolytic treatment with an alternating current using an electrolytic solution containing hydrochloric acid or nitric acid. Specifically, in order to obtain the above-described uneven structure having a medium wave structure, the total amount of electricity involved in the anodic reaction of the aluminum substrate at the end of the electrolytic reaction is 1 to 1000 C / dm 2 .
  • the treatment is preferably performed in an electrolytic solution containing 0.1 to 50% by mass of hydrochloric acid or nitric acid at a temperature of 20 to 80 ° C. for a time of 1 second to 10 minutes.
  • the treatment is preferably performed in an electrolytic solution containing 0.1 to 10% by mass of hydrochloric acid at a temperature of 20 to 80 ° C. for a time of 1 second to 10 minutes. Note that it is also possible to form a small wave structure superimposed on a medium wave structure in the same process with an electrolyte containing hydrochloric acid.
  • an uneven surface structure in which a small wave structure is superimposed on the above-described medium wave structure is obtained by performing an electrochemical surface roughening process in which an aluminum base material is electrolytically treated using a mixed solution of hydrochloric acid and sulfuric acid. Can be formed.
  • the above-mentioned large wave structure is processed by brush grain method, shot blasting, ball grain method, electric discharge machining, plasma etching, transfer roll on the surface of the aluminum substrate before forming the above-described medium wave structure or small wave structure. It can form by performing roughening processes, such as.
  • the anodizing process is an arbitrary process in which an anodizing process is performed after the above-described unevenness forming process to form an anodized aluminum film over the entire surface.
  • an anodic oxide film that is an arbitrary configuration of the deposition-preventing plate of the present invention can be formed.
  • a method of energizing an aluminum plate as an anode in a solution having a sulfuric acid concentration of 50 to 300 g / L and an aluminum concentration of 5% by mass or less is preferably exemplified.
  • the solution used for the anodizing treatment not only sulfuric acid but also phosphoric acid, chromic acid, oxalic acid, sulfamic acid, benzenesulfonic acid, amidosulfonic acid, etc. may be used alone or in combination of two or more. it can.
  • the preferable conditions for the anodizing treatment vary depending on the electrolyte used, but in general, the electrolyte concentration is 1 to 80% by mass, the solution temperature is 5 to 70 ° C., the current density is 0.5 to 60 A / dm 2 , and the voltage is 1 to
  • the electrolysis time is about 100 seconds and about 15 seconds to 50 minutes, and it may be appropriately adjusted so that a desired amount of anodic oxide film can be formed.
  • An annealing treatment process is an annealing treatment (annealing treatment) in a vacuum atmosphere or in the air after the above-described anodizing treatment step (after the sealing treatment or hydrophilic treatment described later, after these treatments). Is an optional step.
  • the heating conditions for the annealing treatment are not particularly limited, and are preferably 200 to 500 ° C., more preferably 300 to 400 ° C.
  • general furnaces such as a heater type and radiation heating, can be used.
  • the treatment time for the annealing treatment is not particularly limited, but is preferably 10 to 120 minutes, more preferably 15 to 60 minutes.
  • the adhesion preventing plate after the annealing treatment preferably has a tensile elastic modulus defined by JIS K7127: 1999 of 65 GPa or less, more preferably 60 GPa or less, and more preferably 55 GPa or less.
  • a mechanical surface roughening treatment such as brush grain may be performed on the surface of the aluminum plate before the electrolytic surface roughening treatment described above.
  • sealing treatment In this invention, you may perform the sealing process which seals the micropore which exists in an anodized film after an anodizing process.
  • the sealing treatment can be performed according to a known method such as boiling water treatment, hot water treatment, steam treatment, sodium silicate treatment, nitrite treatment, ammonium acetate treatment and the like. Hydrophilization that attaches an acid such as silicate or polyvinylphosphonic acid, organic carboxylic acid compound, organic sulfonic acid compound to the surface that has been anodized or the surface that has been sealed. Processing may be performed.
  • the deposition preventing plate for vacuum film forming apparatus As described above, the deposition preventing plate for vacuum film forming apparatus, the vacuum film forming apparatus, and the vacuum film forming method of the present invention have been described in detail. However, the present invention is not limited to the above-described examples, and does not depart from the gist of the present invention. Of course, various improvements and changes may be made.
  • Example 1 An aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m is placed in an electrolytic cell having a nitric acid concentration of 10 g / L kept at 40 ° C., and subjected to electrolytic treatment under the condition that the total amount of electricity is 300 C / dm 2.
  • the electrolytic treatment was performed with a trapezoidal AC power supply wave at a frequency of 60 Hz. Current density was set to 100A / dm 2.
  • Example 2 An aluminum plate (JIS 1050 material) with a thickness of 150 ⁇ m is placed in an electrolytic cell having a nitric acid concentration of 2 g / L kept at 35 ° C. and subjected to electrolytic treatment under the condition that the total amount of electricity is 300 C / dm 2 , thereby preventing adhesion. A plate was made. As the AC power source wave, a trapezoidal wave of 60 Hz was used as in the first embodiment. Current density was 20A / dm 2.
  • Example 3 An aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m is placed in an electrolytic cell having a hydrochloric acid concentration of 20 g / L and a nitric acid concentration of 4 g / L kept at 50 ° C., and subjected to electrolytic treatment under the condition that the total amount of electricity is 500 C / dm 2. Then, a deposition preventing plate was produced. A 60 Hz sine wave was used as the AC power supply wave. Current density was set to 125A / dm 2.
  • Example 4 An aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m was placed in an electrolytic cell having a nitric acid concentration of 10 g / L kept at 40 ° C., and electrolysis was performed under a condition where the total amount of electricity was 300 C / dm 2 .
  • As the AC power source wave a trapezoidal wave of 60 Hz was used as in the first embodiment. Current density was set to 100A / dm 2.
  • this aluminum plate was put in an electrolytic cell having a hydrochloric acid concentration of 10 g / L kept at 45 ° C., and subjected to electrolytic treatment under the condition that the total amount of electricity was 70 C / dm 2 , thereby producing a deposition preventing plate.
  • As the AC power source wave a trapezoidal wave of 60 Hz was used as in the first embodiment. Current density was 50A / dm 2.
  • Example 5 An aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m was placed in an electrolytic cell having a nitric acid concentration of 10 g / L kept at 40 ° C., and electrolysis was performed under a condition where the total amount of electricity was 300 C / dm 2 .
  • As the AC power source wave a trapezoidal wave of 60 Hz was used as in the first embodiment. Current density was set to 100A / dm 2.
  • this aluminum plate was put in an electrolytic cell having a hydrochloric acid concentration of 10 g / L kept at 45 ° C., and subjected to electrolytic treatment under the condition that the total amount of electricity was 70 C / dm 2 , thereby producing a deposition preventing plate.
  • the AC power source wave a trapezoidal wave of 60 Hz was used as in the first embodiment.
  • Current density was 50A / dm 2.
  • a solution having a sulfuric acid concentration of 250 g / L and an aluminum concentration of 5% or less was used for this deposition preventing plate, and an aluminum plate was used as an anode, a DC voltage was applied for 45 minutes, and a 1.0 ⁇ m thick anodic oxide film was formed on the surface. Formed.
  • Current density was 50A / dm 2.
  • Example 6 A slurry liquid having a specific gravity of 1.12 using Pamiston with an average particle size of 30 ⁇ m as an abrasive is supplied to the surface of an aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m, and two rotating roller nylon brushes are used. The surface was roughened by moving on the aluminum plate. The diameter of the nylon brush used was 0.5 mm, the hair density was 450 / cm 2 , and the brush rotation speed was 150 rpm. Thereafter, the electrolytic treatment and the anodic oxidation treatment were performed twice in the same manner as in Example 5 to prepare an adhesion preventing plate.
  • JIS 1050 material JIS 1050 material
  • Example 7 A slurry liquid having a specific gravity of 1.12 using pumiston with an average particle diameter of 30 ⁇ m as an abrasive is supplied to the surface of an aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m, and two rotating roller nylon brushes are used. The surface was roughened by moving on the aluminum plate. The diameter of the nylon brush used was 0.5 mm, the hair density was 450 / cm 2 , and the brush rotation speed was 150 rpm. Thereafter, the electrolytic treatment was performed in the same manner as in Example 1, and then the same anodizing treatment as in Example 5 was performed.
  • the adhesion prevention board was produced by performing a hydrophilic treatment for 10 second at 70 degreeC using 2.5 mass% 3 sodium silicate aqueous solution.
  • the adhesion amount of Si was 10 mg / m 2 .
  • FIG. 5 the electron micrograph which image
  • Example 8 An adhesion-preventing plate was produced in the same manner as in Example 7 except that the silicate treatment was not performed.
  • Example 9 to 12 For Examples 9 to 12, an adhesion-preventing plate was prepared in the same manner as in Examples 1 to 4, respectively, except that the same anodizing treatment as in Example 5 was performed.
  • Example 13 An adhesion-preventing plate was produced in the same manner as in Example 2 except that the current density was 10 A / dm 2 .
  • Example 14 An adhesion-preventing plate was produced in the same manner as in Example 2, except that blasting was performed by blowing glass beads having a particle size of 100 mesh with 0.5 MPa air before the electrolytic treatment.
  • Example 15 An aluminum plate (JIS 1050 material) with a thickness of 150 ⁇ m is placed in an electrolytic cell with a hydrochloric acid concentration of 10 g / L kept at 45 ° C. and subjected to electrolytic treatment under the condition that the total amount of electricity is 70 C / dm 2 to prevent adhesion. A plate was made. The electrolytic treatment was performed with a trapezoidal AC power supply wave at a frequency of 60 Hz. Current density was 50A / dm 2.
  • Example 16 An aluminum plate (JIS 1050 material) with a thickness of 150 ⁇ m is placed in an electrolytic cell with a hydrochloric acid concentration of 10 g / L kept at 45 ° C. and subjected to electrolytic treatment under the condition that the total amount of electricity is 70 C / dm 2 to prevent adhesion. A plate was made. As in the case of Example 15, a 60 Hz trapezoidal wave was used as the AC power source wave. Current density was 50A / dm 2.
  • Example 17 An aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m was placed in an electrolytic cell having a nitric acid concentration of 10 g / L kept at 40 ° C., and electrolysis was performed under a condition where the total amount of electricity was 300 C / dm 2 . As in the case of Example 15, a 60 Hz trapezoidal wave was used as the AC power source wave. Current density was set to 100A / dm 2.
  • this aluminum plate was put in an electrolytic cell having a hydrochloric acid concentration of 10 g / L kept at 45 ° C., and subjected to electrolytic treatment under the condition that the total amount of electricity was 70 C / dm 2 , thereby producing a deposition preventing plate.
  • a 60 Hz trapezoidal wave was used as the AC power source wave.
  • Current density was 50A / dm 2.
  • Example 18 An aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m was placed in an electrolytic cell having a nitric acid concentration of 10 g / L kept at 40 ° C., and electrolysis was performed under a condition where the total amount of electricity was 300 C / dm 2 . As in the case of Example 15, a 60 Hz trapezoidal wave was used as the AC power source wave. Current density was set to 100A / dm 2.
  • this aluminum plate was put in an electrolytic cell having a hydrochloric acid concentration of 10 g / L kept at 45 ° C., and subjected to electrolytic treatment under the condition that the total amount of electricity was 70 C / dm 2 , thereby producing a deposition preventing plate.
  • a 60 Hz trapezoidal wave was used as the AC power source wave.
  • Current density was 50A / dm 2.
  • a solution having a sulfuric acid concentration of 250 g / L and an aluminum concentration of 5% or less was used for this deposition preventing plate, and an aluminum plate was used as an anode, a DC voltage was applied for 45 minutes, and a 1.0 ⁇ m thick anodic oxide film was formed on the surface. Formed.
  • Current density was 50A / dm 2.
  • Example 19 A slurry liquid having a specific gravity of 1.12 using pumiston with an average particle diameter of 30 ⁇ m as an abrasive is supplied to the surface of an aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m, and two rotating roller nylon brushes are used. The surface was roughened by moving on the aluminum plate. The diameter of the nylon brush used was 0.5 mm, the hair density was 450 / cm 2 , and the brush rotation speed was 150 rpm. Thereafter, the electrolytic treatment and the anodic oxidation treatment were performed twice in the same manner as in Example 18 to produce an adhesion preventing plate.
  • Example 1 A 150 ⁇ m thick aluminum plate (JIS 1050 material) was used as it was as an adhesion-preventing plate, and Au was vacuum-deposited on the substrate Z in the same manner as in Example 1. Therefore, the surface of this deposition preventing plate is smooth and does not have an uneven structure.
  • the surface roughness Ra was 0.15 ⁇ m.
  • a slurry liquid having a specific gravity of 1.12 using pumiston with an average particle diameter of 70 ⁇ m as an abrasive is supplied to the surface of an aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m, and five rotating nylon brushes are rotated. The surface was roughened by moving on the aluminum plate to produce a deposition preventing plate.
  • the diameter of the nylon brush used was 0.9 mm, the bristle density was 450 / cm 2 , and the brush rotation speed was 400 rpm.
  • a slurry liquid having a specific gravity of 1.12 using Pamiston with an average particle size of 30 ⁇ m as an abrasive is supplied to the surface of an aluminum plate (JIS 1050 material) having a thickness of 150 ⁇ m, and five rotating nylon brushes are rotated. The surface of the aluminum plate was moved and the surface was roughened to produce a deposition preventing plate. The diameter of the nylon brush used was 0.9 mm, the bristle density was 450 / cm 2 , and the brush rotation speed was 350 rpm.
  • the number of recesses shown in Table 1 below is the result of counting the number of recesses whose opening diameter is not less than the value ( ⁇ m) shown in parentheses in Table 1 below per 0.003 mm 2. It is.
  • (2) Arithmetic mean roughness Ra The surface roughness Ra of each of the prepared adhesion preventing plates was measured with a surface roughness measuring machine (SJ-401 manufactured by Mitutoyo Corporation / radius 2 ⁇ m radius). The results are shown in Table 1 below.
  • (3) Micropores An anti-adhesion plate produced by anodizing was obtained by photographing a surface anodized film at a magnification of 150,000 using a field emission scanning electron microscope (FE-SEM).
  • a piezo scanner that can scan 150 ⁇ m in the XY direction and 10 ⁇ m in the Z direction was used.
  • a cantilever having a resonance frequency of 130 to 170 kHz and a spring constant of 6 to 14 N / m (OMCL-AC200TS, manufactured by OLYMPUS) was used and measured in a DFM mode (Dynamic Force Mode). Further, the reference plane was obtained by correcting the slight inclination of the sample by least-square approximation of the obtained three-dimensional data. At the time of measurement, 256 ⁇ 256 points were measured in a 25 ⁇ m ⁇ 25 ⁇ m range of the surface.
  • the resolution in the XY direction was 0.1 ⁇ m
  • the resolution in the Z direction was 1 nm
  • the scan speed was 15 ⁇ m / sec.
  • three adjacent points were extracted, and the sum of the areas of the minute triangles formed by the three points was obtained to obtain the actual area Sx .
  • the surface area difference ⁇ S was determined by the above formula (i) from the obtained real area S x and the geometric measurement area S 0 .
  • the number of reference points where the inclination of the micro triangle is 45 degrees or more is obtained by subtracting the number of all reference points (the number of all data points from 256 ⁇ 256 points that do not have two adjacent points in a predetermined direction). In other words, the area ratio a45 of the portion having the inclination of 45 degrees or more is calculated by dividing by 255). The results are shown in Table 1 below.
  • Each of the produced protection plates was attached to the inner wall surface of a vacuum vapor deposition apparatus (SGC-22SA manufactured by Showa Vacuum Co., Ltd.) using a Kapton tape as shown in FIG.
  • a vacuum film forming apparatus to which each protective plate was attached, a gold film of 0.5 ⁇ m was formed on the surface of the substrate Z by vacuum deposition.
  • the film forming pressure was 1 ⁇ 10 ⁇ 3 Pa.
  • the adhesion-preventing plate of the present invention having a concavo-convex structure including a concave portion having an average opening diameter of 0.01 to 9 ⁇ m has a strong adhesion force of adhered Au. Therefore, it can be seen that by using this deposition preventive plate, it is possible to prevent the deposited film forming material from peeling off and generating particles (Examples 1 to 19). Particularly, an embodiment in which a concavo-convex structure (small wave structure) including a recess having an average opening diameter of 0.01 to 0.3 ⁇ m is superimposed on a concavo-convex structure (medium wave structure) including a recess having an average opening diameter of 0.5 to 9 ⁇ m.
  • Examples 3 to 6, Examples 11 and 12, and Examples 17 to 19 have high Au adhesion.
  • Examples 5 to 12 and Examples 16, 18 and 19 in which an anodizing treatment was performed and an aluminum anodized film was provided on the surface of the deposition preventing plate had an anchor effect due to micropores existing in the anodized film. It was found that the adhesion strength was improved and the scratch resistance was also improved. Further, it was found from the comparison between Example 1 and Example 7 that the adhesion strength was improved when the concavo-convex structure including the concave portion larger than the concave portion having an average opening diameter of 0.5 to 9 ⁇ m was provided.
  • Example 2 From comparison between Example 2 and Example 13, it was found that the adhesion strength was improved when the surface area ratio ⁇ S was 5% or more and the steepness a45 was 3% or more.
  • the adhesion preventing plates of Comparative Examples 1 and 2 having no uneven structure on the surface have a very low adhesion force of the adhered Au.
  • Comparative Examples 3, 4 and 6 having only a concavo-convex structure (large wave structure) including a large concave portion having an average opening diameter exceeding 10 ⁇ m have a certain degree of improvement in Au adhesion compared to a deposition preventing plate having a smooth surface.
  • the adhesion preventing plate of Comparative Example 5 having a surface roughness Ra smaller than 0.2 ⁇ m Compared to the adhesion prevention plate with a smooth surface, the effect of improving the adhesion strength of Au is obtained to some extent, but it cannot be said that it is sufficient. I can't prevent you from doing it. From the above results, the effects of the present invention are clear.
  • Example 20 to 22 After the final anodic oxidation treatment, an adhesion-preventing plate was produced in the same manner as in Example 6 except that the annealing treatment was performed under the conditions shown in Table 2 below. Note that the annealing rate was 15 ° C./min.
  • Example 23 After the hydrophilization treatment, an adhesion preventing plate was produced in the same manner as in Example 7 except that the annealing treatment was performed under the conditions shown in Table 2 below. Note that the annealing rate was 15 ° C./min.
  • Example 6 The processability of the adhesion-preventing plates produced in Example 6 and Examples 20 to 22, and Example 7 and Examples 23 to 25 was evaluated by the following methods.
  • ⁇ Processability> As in Example 1, when using Kapton tape to attach the deposition plate to the inner wall surface of a vacuum evaporation system (Showa Vacuum SGC-22SA), it does not lift up from the inner wall surface of the vacuum chamber. What was able to be attached was evaluated as “A” as being extremely excellent in workability, and although it slightly lifted from the inner wall surface of the vacuum chamber, it was easy to attach it. “B” was evaluated as an excellent material, and “C” was evaluated as a product that was lifted from the inner wall surface of the vacuum chamber and took a long time for sticking, and was inferior in workability. Moreover, the tensile elasticity modulus of each produced protection board was measured by the method prescribed
  • vacuum film forming methods such as vacuum deposition, sputtering, and plasma CVD, such as manufacturing semiconductor devices and electronic component materials.
  • Vacuum film-forming apparatus Adhesion board 12a Upper surface adhesion board 12b Side surface adhesion board 12c Lower surface adhesion board 14 Vacuum chamber 16 Deposition source 18 Substrate holder 30, 32, 34 Uneven structure 30a, 32a, 34a, Concave part

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Abstract

L'invention concerne la fourniture d'une plaque empêchant les dépôts pour un dispositif de formation de film sous vide. La plaque empêchant les dépôts est utilisée dans un dispositif de formation de film sous vide et peut empêcher efficacement le détachement du matériau de formation de film adhéré. Cette plaque empêchant les dépôts est composée d'aluminium et présente une surface structurée et texturée qui contient des parties évidées avec un diamètre d'ouverture moyen de 0,01 µm à 9 µm. La rugosité moyenne arithmétique Ra de la surface est de 0,20 µm ou plus et la plaque empêchant les dépôts est utilisée pour un dispositif de formation de film sous vide.
PCT/JP2013/056105 2012-03-28 2013-03-06 Plaque empêchant les dépôts destinée à un dispositif de formation de film sous vide, dispositif de formation de film sous vide et procédé de formation de film sous vide WO2013146137A1 (fr)

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WO2014065125A1 (fr) * 2012-10-26 2014-05-01 富士フイルム株式会社 Plaque anti-adhésive pour un appareil de dépôt de film sous vide, procédé de fabrication d'une plaque anti-adhésive pour un appareil de dépôt de film sous vide, appareil de dépôt de film sous vide et procédé de dépôt de film sous vide
CN105900210A (zh) * 2014-12-15 2016-08-24 应用材料公司 用于纹理化腔室部件的方法和具有纹理化表面的腔室部件

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JP6680265B2 (ja) 2017-05-26 2020-04-15 株式会社村田製作所 セラミック板状体の製造方法
JP6319505B1 (ja) * 2017-09-08 2018-05-09 凸版印刷株式会社 蒸着マスク用基材、蒸着マスク用基材の製造方法、蒸着マスクの製造方法および表示装置の製造方法

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JP3975387B2 (ja) * 2000-02-14 2007-09-12 富士電機ホールディングス株式会社 プラズマ放電による薄膜形成装置用シャワー電極の製造方法
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WO2008143088A1 (fr) * 2007-05-18 2008-11-27 Ulvac, Inc. Dispositif de traitement plasma et procédé de fabrication d'un élément anti-adhérence
JP2008291299A (ja) * 2007-05-23 2008-12-04 Texas Instr Japan Ltd メタル成膜装置におけるメタル膜剥離防止構造及び当該構造を用いる半導体装置の製造方法
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WO2014065125A1 (fr) * 2012-10-26 2014-05-01 富士フイルム株式会社 Plaque anti-adhésive pour un appareil de dépôt de film sous vide, procédé de fabrication d'une plaque anti-adhésive pour un appareil de dépôt de film sous vide, appareil de dépôt de film sous vide et procédé de dépôt de film sous vide
CN105900210A (zh) * 2014-12-15 2016-08-24 应用材料公司 用于纹理化腔室部件的方法和具有纹理化表面的腔室部件
CN105900210B (zh) * 2014-12-15 2021-06-01 应用材料公司 用于纹理化腔室部件的方法和具有纹理化表面的腔室部件

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