WO2013141490A1

WO2013141490A1 - Substrate-processing apparatus and substrate-processing method

Info

Publication number: WO2013141490A1
Application number: PCT/KR2013/001364
Authority: WO
Inventors: 정성현; 이향주
Original assignee: 주식회사 윈텔
Priority date: 2012-03-21
Filing date: 2013-02-21
Publication date: 2013-09-26
Also published as: KR20130106906A

Abstract

Provided are a substrate-processing apparatus and a substrate-processing method. The substrate-processing apparatus includes a chamber, a sheath-gas exhaust line for discharging sheath gas to the outside, a rotatable base plate arranged inside the chamber, a plurality of substrate-supporting units mounted on the base plate so as to support the respective substrates, a plurality of process modules arranged on the upper plate of the chamber so as to face the substrate-supporting units, and a sheath-gas distribution unit mounted on the upper plate so as to form a gas curtain by supplying the sheath gas such that the gas supplied to the predetermined process module is prevented from spreading to the other process modules. Each of the process modules has a process-gas supply unit for supplying process gas.

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for processing a plurality of substrates in different processes in one chamber.

Deep anisotropic structure etching is one of the major techniques used to fabricate semiconductor and microstructured devices. A technique applicable to microelectromechanical systems (MEMS). In order to satisfactorily manufacture such devices, it is necessary to strictly control the etching profile.

One of the techniques for forming trenches or holes with vertical sidewalls uses a protective coating in an area open to the trench. The material used to form the coating is resistant to the etchant used to etch the trench or hole. The coating may be applied continuously or at certain points in the trench or hole forming process. For example, the silicon substrate is covered with a patterned mask that exposes select regions of the silicon substrate to plasma etching. Anisotropic etching is accomplished using alternating plasma etching and polymer forming steps.

For example, anisotropic etching can be performed using the Bosch Process. For example, the Bosch process performs isotropic etching by plasma discharge of an etchant gas such as SF6 for a predetermined time, and then forms a protective layer on the etched sidewall by plasma discharge of a deposition gas such as C4F8. This process is performed repeatedly. However, the conversion of the etching gas to the deposition gas is required, and the conversion of this gas requires time. In addition, the Bosch Process forms wavy scallops on the sidewalls. A method other than the gas switching method is required.

One technical problem to be solved of the present invention is to provide an apparatus for processing a plurality of substrates in one chamber using a gas curtain.

One technical problem to be solved of the present invention is to provide a method for processing a plurality of substrates in one chamber using a gas curtain.

Substrate processing apparatus according to an embodiment of the present invention includes a chamber, a blocking gas exhaust line for discharging the blocking gas to the outside, the base plate is disposed inside the chamber, the rotatable base plate is mounted on the base plate, A plurality of substrate supports supporting each, a plurality of process modules disposed on an upper plate of the chamber opposite the substrate supports, and a gas mounted on the upper plate and supplied to a predetermined process module to another process module And a blocking gas distribution unit supplying the blocking gas to prevent diffusion and forming a gas curtain. Each of the process modules includes a process gas supply unit for supplying a process gas.

In one embodiment of the present invention, the blocking gas may be nitrogen gas or inert gas.

In one embodiment of the invention, the chamber is cylindrical, the base plate is in the form of a disc, and the substrate supports can be arranged at regular intervals on the circumference of a circle with a constant radius.

In one embodiment of the present invention, the cut-off gas distribution unit is cross-shaped, the number of the process module is four, the process modules include the first to fourth process modules along the clockwise direction, the process modules are induction It may be a combined plasma source.

In one embodiment of the present invention, the blocking gas distribution unit comprises a plurality of nozzles for injecting the blocking gas perpendicular to the base plate, the nozzles are arranged at regular intervals in the radial direction from the center of the chamber and The distance between the bottom surface of the cutoff gas distribution unit and the top surface of the base plate may be less than or equal to 3 millimeters (mm).

In one embodiment of the present invention, the base plate further comprises an exhaust trench formed in the upper surface of the base plate facing the blocking gas distribution, the trench portion is connected to the blocking gas exhaust line to the blocking gas Can be discharged.

In one embodiment of the present invention, it may further include an exhaust disposed in the lower end of the chamber for exhausting the process gas provided to the plurality of process modules.

A substrate processing method according to an embodiment of the present invention comprises the steps of separating the internal space of one chamber into a plurality of process module regions using a blocking gas distribution unit for providing a blocking gas to have different process conditions; Exhausting the blocking gas to the outside by using a trench formed in the base plate on which substrates are disposed and a blocking gas exhaust line; Primary processing the substrates using a process gas provided in each of the process module regions; And rotating the base plate to perform a secondary treatment different from the primary treatment.

In one embodiment of the present invention, the primary treatment may be an etching process using an etching gas, the secondary treatment may be a polymer deposition process using a deposition gas.

In one embodiment of the present invention, the step of rotating the base plate to the third process; And rotating the base plate to perform a fourth treatment, wherein the first treatment is a deposition process using a first reaction gas for atomic layer deposition, and the second treatment is a purge process, and the tertiary treatment. Is a second reaction gas that reacts with the first reaction gas for atomic layer deposition, and the fourth treatment may be a purge process.

A substrate processing apparatus according to an embodiment of the present invention includes a plurality of process modules for performing different processes separated by a gas curtain. Each process module performs only the same process, and another process module performs another process on the moved substrate. As a result, process stability and process reproducibility are improved.

1 is a plan view illustrating a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1. 3 is a cross-sectional view taken along the line II-II ′ of FIG. 1. 4 is a cross-sectional view taken along line III-III ′ of FIG. 1. FIG. 5 is a cross-sectional view taken along the line IV-IV ′ of FIG. 1.

6 is a perspective view illustrating the substrate processing apparatus of FIG. 1.

In the semiconductor process, the flat panel display process, the solar cell process, and the like, there are processes that are continuously repeated on the substrate.

For example, in relation to an etching process, a Bosch process for forming a through silicon via hole (TSV hole) is performed by repeating an etching process and a sidewall polymer deposition process.

The vertical channel flash memory device includes a stack in which a conductive film such as polysilicon and an insulating film such as an oxide film are alternately stacked. Therefore, there is a need for a process of continuously etching the conductive film and the insulating film that are repeatedly stacked.

In terms of deposition, the high integration of semiconductor devices has led to a reduction in the size of the semiconductor devices. Accordingly, the vertical dimension of the semiconductor device is also reduced. Typical examples include a gate insulating film of a transistor and a capacitor dielectric film, which is an information storage device of a DRAM. In order to successfully form these thin films with a very thin thickness of about 100Å, instead of the conventional chemical vapor deposition method in which the raw materials of the elemental elements are simultaneously supplied to the substrate to deposit the thin films, a deposition method in which the thin films are formed by alternately feeding the raw materials to the substrate alternately This is being studied. In this atomic layer deposition method, since the deposition is performed only by surface chemical reaction, it is possible to grow a thin film having a uniform thickness irrespective of surface irregularities, and the thickness of the raw material supply cycle is not proportional to the deposition time. Since it is proportional to the thickness of the formed thin film can be precisely controlled.

Specifically, the atomic layer deposition method alternately supplies a reaction gas and a purge gas to form an atomic layer thin film. For example, a first gas is supplied to chemically adsorb a layer of the first source to the substrate surface, and the excess physically adsorbed first sources are removed from the substrate by flowing purge gas. Subsequently, a second reaction gas is supplied to the first source of one layer to chemically react the first source and the second reaction gas of one layer to deposit an atomic layer, and excess second gas is removed from the substrate by flowing a purge gas. do. The above process is repeated. The purge gas may be nitrogen gas or inert gas.

Continuously repeated processes can typically be performed while changing gases in one chamber. However, alteration of gas in one chamber can degrade process stability or process reproducibility. On the other hand, in the case where the process is continuously performed in a plurality of chambers is assigned, the movement time of the substrate is increased to reduce the productivity. Accordingly, there is a need for a method of increasing process stability and process reproducibility while progressing a process that is continuously repeated in one chamber.

A substrate processing method according to an embodiment of the present invention includes a first process module and a second process module in one chamber. In this case, the first process module performs an etching process on the first substrate by using a first gas such as SF6 which mainly contributes to etching. Using a second gas such as C4F8, the second process module performs a process of polymer depositing on the second substrate. The first process module and the second process module are arranged in one chamber, but operate at different pressures and gases using a diffusion barrier or gas curtain. The diffusion barrier or gas curtain may inhibit gas diffusion between process modules.

Subsequently, by rotating the substrates, the first substrate is mounted opposite the second process module and the second substrate is mounted opposite the first process module. Accordingly, the first substrate may be deposited and the second substrate may be etched. That is, the first process module performs only the etching process, so that the process stability of the first process module is increased. In addition, the second process module performs only the deposition process, thereby increasing process stability of the second process module.

The technical idea of the present invention can also be used in the atomic layer deposition process.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the invention will be fully conveyed to those skilled in the art. In the drawings, the components are exaggerated for clarity. Portions denoted by like reference numerals denote like elements throughout the specification.

1 to 6, the substrate processing apparatus includes a chamber 102 and a blocking gas exhaust line 116 for discharging the blocking gas to the outside, and a base plate rotatable inside the chamber 102. 112, a plurality of substrate supporting parts 124a to 124d mounted on the base plate 112 and supporting the substrates 122a to 122d, and the substrate supporting parts 124a to 124d, respectively. A plurality of process modules 140a-140d disposed on the upper plate 104 of the 102, and mounted on the upper plate 104, to prevent the gas supplied to a given process module from diffusing to other process modules. And a blocking gas distributor 132 for supplying the blocking gas to form a gas curtain. Each of the process modules 140a to 140d includes process gas supply units 145a to 145d for supplying a process gas.

The chamber 102 may have a cylindrical shape. The chamber 102 may perform a semiconductor process, a flat panel display process, or a solar cell process. The top plate 104 may have a disc shape. The top plate 104 may be a lid of the chamber 102. The exhaust unit 106 may be connected to the chamber 102 to discharge gas to the outside. For example, the exhaust unit 106 may be disposed under the base plate 112 to discharge the process gas provided to the process modules. The process modules 140a to 140d may be disposed at regular intervals on a circumference having a constant radius with respect to the center of the upper plate 104. The inner side of the chamber may have a jaw. Spacer 109 may be disposed on the jaw. The spacer 109 may be disposed to be close to the side of the base plate 112. Therefore, the process gas discharged from the predetermined process region can be prevented from passing to another process region. The spacer may have an arc shape having a predetermined width.

Each of the process modules 140a to 140d may have process gas supply units 145a to 145d. The process modules may include first to fourth process modules. Each of the first to fourth process gas supplies 145a to 145d may independently provide a gas to the chamber 102. The first to fourth gases are not limited to one type of gas and may include a gas in which a plurality of gases are mixed.

When the chamber 102 performs two consecutive processes, the first process module 140a and the third process module 140c may perform the same process. In addition, the second process module 140b and the fourth process module 140d may perform the same process. The first process module region 241a may be a space between the first process module 140a and the base plate 112. The second process module region 241b may be a space between the second process module 140b and the base plate 112. The third process module region 241c may be a space between the third process module 140c and the base plate 112. The fourth process module region 241d may be a space between the fourth process module 140d and the base plate 112. The process module regions 241a to 241d may be separated from each other by the blocking gas distributor 132 that performs a gas curtain function.

For example, the first process module 140a and the third process module 140d perform an etching process in a Bosch process, and the second process module 140b and the fourth process module 140d. ) May perform a polymer deposition process in the Bosch process. Accordingly, the first gas may include SF6 gas, and the second gas may include C4F8. That is, the operating conditions of the first process module and the operating conditions of the second process module may be different. The operating condition may be a pressure, a type of gas, a gas injection method, a supply power of an energy applying means for generating plasma, or a temperature of a substrate.

Each of the first to fourth process modules 140a to 140d may be an inductively coupled plasma device. Corresponding to the first to fourth process modules, through holes 107a to 107d may be formed in the upper plate 104. Each of the first to fourth process modules 140a to 140d may include dielectrics 142a to 142d mounted in the through holes 107a to 107d and induction antennas 141a to around the dielectrics 142a to 142d. 141d). The first to fourth process modules 140a to 140d may be modified to perform a process other than a plasma process.

RF power sources 152a to 152d are connected to the induction antennas 141a to 141d, and the induction antennas 141a to 141d may transfer induced electromotive force into the dielectric. In this case, the induced electromotive force may form a plasma. The dielectrics 142a to 142d may have a tube shape. One end of the dielectrics 142a to 142d may extend through the through hole, and the other end of the dielectrics 142a to 142d may be blocked by the metal plates 143a to 143d. Gas supply units 145a to 145d may be disposed at the centers of the metal plates 143a to 143d to supply gas to the process module region. Each of the first to fourth process modules 140a to 140d may include magnets 144a to 144d such as a permanent magnet or an electromagnet. The magnet may be disposed around the induction antenna to increase the plasma density. The permanent magnet may have a toroidal shape and may be magnetized in the central axis direction of the tube to form a magnetic field in the central axis direction of the tube. The strength of the magnetic field generated by the magnet at the center of the induction antenna may be tens of gauss to hundreds of gauss. The magnetic field may penetrate right-handed circularly polarized wave (R-wave) into the plasma. Accordingly, the plasma density can be increased than the density of conventional inductively coupled plasma.

Each of the RF power sources 152a to 152d may be connected to the induction antennas 141a to 141d through the first impedance matching networks 154a to 154d to provide induced electromotive force into the dielectrics. Accordingly, a plasma may be formed inside the dielectric, and the plasma may be provided to the substrate by decomposing a gas.

The blocking gas distribution unit 132 may discharge the blocking gas to prevent the process gas provided to the predetermined process module from diffusing to other process modules. For example, the blocking gas distributor 132 may have a cross shape having a predetermined thickness. The blocking gas distributor 132 may include nozzles 134 to discharge the blocking gas. The blocking gas discharged through the nozzles 134 may be injected perpendicular to the base plate 112. The blocking gas injected may be exhausted through a separate blocking gas exhaust line 116 so as not to be mixed with the process gas. The blocking gas may be nitrogen gas or inert gas.

The blocking gas distribution part 132 may be formed of an insulator. One surface of the blocking gas distribution part 132 may be coupled to face the top plate 104. The top plate 104 may include a cutoff gas distribution trench 103 formed corresponding to the cutoff gas distribution part 132. The blocking gas distribution trench may be formed in the cross shape. The cutoff gas supply line 105 may supply the cutoff gas to the trench 103 at a plurality of positions. The blocking gas supplied to the trench 103 is discharged through the nozzle 134 formed in the blocking gas distribution part 132. Accordingly, each of the process module regions may maintain different pressures and gases. That is, the blocking gas may perform a gas curtain function.

In order to perform the gas curtain function, the base plate 112 may include the blocking gas exhaust line 116 to discharge the blocking gas to the outside. The blocking gas exhaust line 116 may be formed at the center of the base plate 112. In order to guide the blocking gas to the blocking gas exhaust line 116, an exhaust trench 114 may be formed on an upper surface of the base plate 112. The width of the exhaust trench 114 may be smaller than the width of the lower surface of the blocking gas distribution part 132. In addition, the depth of the exhaust trench 114 may be greater than the width of the exhaust trench to provide sufficient conductance.

It is preferable that the interval between the lower surface of the blocking gas distribution part 132 and the upper surface of the base plate 112 is narrow. However, when the lower surface of the blocking gas distribution part and the upper surface of the base plate contact each other, contaminants may occur. Thus, the gap may be within 3 mm.

The base plate 112 may have a disc shape. Substrate supports 122a to 122d may be disposed on a circumference of a constant radius with respect to the central axis of the base plate 112. The cylindrical extension 117 may extend in the axial direction from the center of the lower surface of the base plate 112. The through hole 201 may be formed in the lower surface of the chamber 102. The extension part 117 may be disposed through the through hole 201. A baffle 178 may be disposed in the through hole 201 to block the flow of gas.

The blocking gas exhaust line 116 may be formed to penetrate the center of the base plate 112 and the center of the extension part 117. The blocking gas exhaust line 116 may be connected to the side through hole 118. The side through hole 118 may be formed at a lower side surface of the extension part 116 to form a path for discharging the blocking gas. The side through hole 118 may be a plurality.

The vertical moving part 180 is connected to the first flange 181 mounted on the lower surface of the through hole 201, the corrugated pipe 182 continuously connected to the first flange 181, and the corrugated pipe 182. It may include a second flange 183 connected in series. The extension part 117 may be disposed to penetrate the inside of the first flange 181, the corrugated pipe 182, and the second flange 183.

The third flange 184 may be coupled to the second flange 183. The third flange 184 may be arranged to surround the extension 117 and may maintain a vacuum sealing. Accordingly, the blocking gas discharged through the side through hole may be sealed in the space by the baffle 178 and the third flange 184.

An exhaust line 174 may be connected to a side surface of the first flange 181. The bar line 174 may be connected to the vacuum pump 172. The blocking gas may be exhausted through the blocking gas exhaust line 117, the side through hole 118, and the exhaust line 174.

The moving plate 185 may be fixedly coupled to the third flange 184. The first motor support 189 is mounted on the lower surface of the moving plate. The first motor 187 is fixed to the center of the first motor support 189. The central axis of the first motor 187 may be axially coupled with the screw 186. One end of the screw 186 may be fixed to the lower surface of the chamber 102 so that the other end of the screw 186 may be axially coupled to the central axis of the first motor 197. A nut part 188 is disposed around the screw 186, and the nut part 188 is inserted into and fixed to the moving plate 185. Accordingly, the moving plate 185 vertically moves as the first motor 187 rotates. According to the vertical movement of the movable plate 185, the length of the corrugated pipe 182 having elasticity is adjusted.

One end of the extension part 117 is fixed to the moving plate 185 to rotate. The second motor 192 is fixed to the lower surface of the moving plate 185. The rotational force of the second motor 192 rotates the other end of the extension part 117 through the rotational movement direction conversion part. Thus, the base plate rotates. A radius of the other end of the extension portion 117 may be reduced to form a jaw. The portion where the movable plate 185 is coupled to the other end of the extension part 117 may be recessed. The jaw may be disposed at the recessed portion.

The lower surface of the chamber 102 may be equipped with a main exhaust line (106a) for exhausting the process gas provided from the process modules. The main exhaust line 106a is connected to the vacuum pump 106b.

According to a modified embodiment of the present invention, the main exhaust line may be a plurality. The main exhaust line 106a may be modified to be disposed on the side of the chamber.

The substrate supports 122a to 122d may include a temperature controller (not shown). The temperature control unit may include a cooling means or a heating means. That is, depending on the treatment process, the temperature of the substrate may be -150 degrees Celsius to 900 degrees Celsius.

Each of the substrate supports 122a through 122d may be connected to RF bias power sources 128a through 128d through bias impedance matching networks 126a through 126d. Accordingly, a plasma is formed on the substrate, and the plasma may provide energy to the substrate with self-bias.

The first gas supply unit 145a and the third gas supply unit 145c are decomposed by plasma to provide an etching gas for etching a substrate, and the second gas supply unit 145b and the fourth gas supply unit 146d are It is possible to provide a deposition gas that is decomposed by plasma to form a polymer. For example, the first gas may include at least one of a fluorine-containing gas and a chlorine-containing gas. The second gas may include at least one of oxygen gas, hydrogen gas, and carbon containing gas. Specifically, the first gas may include at least one of SF6, CF4, and CHF3. The second gas may include at least one of C 4 F 8, C 3 F 6, C 2 F 2, oxygen, and hydrogen.

After the first process module 140a first processes the first substrate 124a, the base plate 112 may rotate. Accordingly, the second process module 140b may secondaryly process the first substrate 124a.

Substrate processing method is a trench formed in the base plate on which the substrates are disposed, separating the internal space of one chamber into a plurality of process module regions using a barrier gas distribution unit that provides a barrier gas to have different process conditions Exhausting the barrier gas to the outside using a secondary and barrier gas exhaust line, first treating the substrates using a process gas provided in each of the process module regions, and rotating the base plate to primary Performing a secondary process other than the process. The primary treatment may be an etching process using an etching gas, and the secondary treatment may be a polymer deposition process using a deposition gas.

The substrate processing method according to the modified embodiment of the present invention may be applied to the atomic layer deposition method. Specifically, the substrate processing method is to separate the internal space of one chamber into a plurality of process module regions using a blocking gas distribution unit that provides a blocking gas to have different process conditions, the base plate on which the substrates are disposed Exhausting the blocking gas to the outside using a trench formed in the processing unit and a blocking gas exhaust line, first treating the substrates using a process gas provided to each of the process module regions, and rotating the base plate. Performing a secondary treatment different from the primary treatment, rotating the base plate to perform a tertiary treatment, and rotating the base plate to perform a fourth treatment. The primary treatment is a deposition process using a first reaction gas for atomic layer deposition, the secondary treatment is a purge process to remove residues using a purge gas, and the tertiary treatment is a first process for atomic layer deposition. It is a second reaction gas to react with the reaction gas, the fourth treatment may be a purge process to remove the residue by using the purge gas. The substrate processing apparatus may include first to fourth process modules. The first process module may perform a primary process, the second process module may perform a secondary process, the third process module may perform a third process, and the fourth process module may perform a fourth process. The purge gas may be nitrogen gas or inert gas.

While the invention has been shown and described with respect to certain preferred embodiments thereof, the invention is not limited to these embodiments, and has been claimed by those of ordinary skill in the art to which the invention pertains. It includes all the various forms of embodiments that can be implemented without departing from the spirit.

Claims

chamber;

A base plate including a cutoff gas exhaust line for discharging the cutoff gas to the outside, the base plate being rotatable inside the chamber;

A plurality of substrate supports mounted on the base plate and supporting each of the substrates;

A plurality of process modules disposed on an upper plate of the chamber opposite the substrate supports; And

A blocking gas distribution part mounted on the upper plate and supplying the blocking gas so as to prevent diffusion of a gas supplied to a predetermined process module into another process module to form a gas curtain;

Each of the process modules comprises a process gas supply unit for supplying a process gas.
The method of claim 1,

The blocking gas is a substrate processing apparatus, characterized in that the nitrogen gas or inert gas.
The method of claim 1,

The chamber is cylindrical,

Wherein said base plate is in the form of a disc and said substrate supports are arranged at regular intervals on a circumference of a circle having a constant radius.
The method of claim 2,

The blocking gas distribution unit is cross-shaped,

The number of process modules is four,

The process modules include first to fourth process modules along the clockwise direction,

And said process modules are inductively coupled plasma sources.
The method of claim 1,

The blocking gas distribution unit includes a plurality of nozzles for injecting the blocking gas perpendicular to the base plate,

The nozzles are arranged at regular intervals radially from the center of the chamber,

And a distance between a lower surface of the cutoff gas distribution part and an upper surface of the base plate is 3 millimeters (mm) or less.
The method of claim 1,

The base plate further includes an exhaust trench formed in the upper surface of the base plate facing the blocking gas distribution,

And the trench part is connected to the cutoff gas exhaust line to discharge the cutoff gas.
The method of claim 1,

And an exhaust unit disposed at a lower end of the chamber to exhaust the process gas provided to the plurality of process modules.
Separating the internal spaces of one chamber into a plurality of process module regions by using a blocking gas distribution unit providing a blocking gas to have different process conditions;

Exhausting the blocking gas to the outside using a trench formed in the base plate on which substrates are disposed and a blocking gas exhaust line;

Firstly treating the substrates using a process gas provided in each of the process module regions; And

Rotating the base plate to perform a secondary treatment different from the primary treatment.
The method of claim 8,

The primary treatment is an etching process using an etching gas,

And the secondary treatment is a polymer deposition process using a vapor deposition gas.
The method of claim 8,

Rotating the base plate to perform tertiary processing; And

Rotating the base plate to further process the fourth step,

The primary treatment is a deposition process using a first reaction gas for atomic layer deposition,

The secondary treatment is a purge process,

The tertiary treatment is a second reaction gas that reacts with the first reaction gas for atomic layer deposition,

And said fourth treatment is a purge process.