WO2013135526A1 - Puce de semi-conducteur optoélectronique et procédé de fabrication d'une puce de semi-conducteur optoélectronique - Google Patents

Puce de semi-conducteur optoélectronique et procédé de fabrication d'une puce de semi-conducteur optoélectronique Download PDF

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Publication number
WO2013135526A1
WO2013135526A1 PCT/EP2013/054362 EP2013054362W WO2013135526A1 WO 2013135526 A1 WO2013135526 A1 WO 2013135526A1 EP 2013054362 W EP2013054362 W EP 2013054362W WO 2013135526 A1 WO2013135526 A1 WO 2013135526A1
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WO
WIPO (PCT)
Prior art keywords
layer
carrier
semiconductor chip
bragg mirror
optoelectronic semiconductor
Prior art date
Application number
PCT/EP2013/054362
Other languages
German (de)
English (en)
Inventor
Joachim Hertkorn
Karl Engl
Andreas Weimar
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2013135526A1 publication Critical patent/WO2013135526A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • An optoelectronic semiconductor chip is specified.
  • This task is among others by a
  • Optoelectronic semiconductor chip a carrier.
  • the carrier is the semiconductor chip mechanically
  • the carrier is a silicon substrate.
  • the carrier is a silicon substrate.
  • the Bragg mirror includes one or a plurality of first sub-layers and one or more second sub-layers.
  • the first and second sub-layers follow each other alternately and are made of materials with
  • the semiconductor layer sequence comprises one or more active layers for generating electromagnetic radiation.
  • the active layer comprises one or more pn junctions or one or more quantum well structures.
  • the active layer is adapted to produce visible or ultraviolet radiation.
  • a wavelength of the generated radiation is preferably between 430 nm and 560 nm inclusive.
  • Semiconductor layer sequence means in particular that the semiconductor layer sequence that for generating radiation
  • a semiconductor material of the semiconductor layer sequence is preferably a nitride compound semiconductor material such as Al n In n m m Ga m N with 0 -S n ⁇ 1, 0 -S m ⁇ 1 and n + m ⁇ 1
  • Substances may be replaced and / or supplemented.
  • 0 -S n ⁇ 0.2 and / or 0.35 -S m ⁇ 0.95 and / or 0 ⁇ 1 nm ⁇ 0.5.
  • the stated ranges of values for n and m are preferably valid for all sub-layers of the semiconductor layer sequence, wherein
  • the semiconductor layer sequence to have one or more
  • Interlayers are preferably less than or equal to 20 nm.
  • the Bragg mirror is applied and grown on the carrier. This may mean that the Bragg mirror is in direct contact with the carrier.
  • the fact that the Bragg mirror has grown on the carrier is, for example, by means of
  • the Bragg mirror then represents a growth basis for the semiconductor layer sequence.
  • a proof that the semiconductor layer sequence has grown on the Bragg mirror can be made by means of TEM.
  • the Bragg mirror can then serve as a heat spreader.
  • III-nitride means that a nitride of an element from the third main group of the periodic table of the chemical
  • Optoelectronic semiconductor chip a carrier and a Bragg mirror having at least a first sub-layer and at least a second sub-layer.
  • a gallium nitride based functional semiconductor layer sequence is deposited on the Bragg mirror or on the support and includes at least one active layer for generating a
  • the Bragg mirror is mounted on the carrier.
  • the first sublayers of the Bragg mirror comprise or consist of a metal nitride or a III nitride.
  • the Bragg mirror can serve as a kind of buffer layer for gallium nitride-based growth
  • Spectral range radiation-absorbing support on the finished semiconductor chip allows.
  • Partial layers formed of aluminum nitride. The first
  • Partial layers then have a comparatively high
  • first partial layers are made of aluminum nitride does not exclude that the first Sublayers other substances, in particular in the form of
  • the first partial layer of the Bragg mirror which is closest to the carrier has, preferably directly on one
  • a thickness of this aluminum layer is, for example, one, two or three atomic
  • this aluminum layer is free or substantially free of nitrogen. It then comes the carrier on the carrier top not directly in contact with nitrogen.
  • Partial layer of the Bragg mirror on a second layer of A1N is deposited more slowly than a subsequent third layer of A1N.
  • the second and third layers preferably follow one another directly and in particular also directly follow the first layer.
  • this first partial layer of the Bragg mirror consists of the three layers mentioned. This first
  • Partial layer of the Bragg mirror can be generated by means of epitaxy or sputtering, all other partial layers of the Bragg mirror are then preferably produced by sputtering. According to at least one embodiment, the first
  • Sub-layer oxygen added is preferably at least 0.1% or at least 0.2% or at least 0.5%. Further, a weight proportion of the oxygen is preferably at most 10% or at most 5% or at most 1.5%.
  • the introduction of oxygen into an AIN layer is also specified in the publication DE 100 34 263 B4, the disclosure of which is incorporated by reference.
  • an oxygen content in the first sub-layer is monotonously or strictly monotonically reduced in a direction away from the carrier.
  • a highest oxygen concentration is present directly on the support.
  • the oxygen content may decrease stepwise or linearly.
  • Partial layer has a thickness of at least 10 nm or from
  • the thickness is at least 30 nm or at least 50 nm.
  • the thickness is at most 1000 nm or at most 200 nm or at most 150 nm. In particular, the thickness is approximately 100 nm.
  • the first partial layer of the Bragg mirror closest to the carrier is produced with a thickness which is different from the thicknesses
  • the Thicknesses have a deviation of, for example, at least 10% or at least 25%. Alternatively or additionally, the thicknesses deviate from one another by at most 75% or by at most 50%.
  • the first partial layer of the Bragg mirror closest to the carrier has the same thickness as the further first partial layers of the Bragg mirror, in particular with a tolerance of at most 10% or at most 5%.
  • this comprises a heat spreader.
  • the heat spreader is located on one of the semiconductor layer sequence
  • the heat spreader and the first sublayers of the Bragg mirror are formed of the same material, with different dopings
  • Heat spreaders as well as the first partial layers of A1N. According to at least one embodiment, the
  • the Masking layer preferably comprises or consists of a nitride or oxide.
  • the masking layer is or comprises one of the following materials: a silicon nitride, a silicon oxide, a silicon oxynitride, a boron nitride, a magnesium oxide.
  • Masking layer is preferably at most 2 nm or at most 1 nm or at most 0.5 nm.
  • the masking layer is made with a thickness which is on average one or two monolayers. With such a thin one
  • Masking layers may be so-called in-situ masking.
  • the masking layer may be formed by sputtering or by MOVPE, organometallic
  • Gas phase epitaxy be generated.
  • a sputtered SiC ⁇ masking layer but this may also have a significantly greater thickness, for example between 100 nm and 400 nm inclusive.
  • comparatively thick masking layer is preferably structured photolithographically.
  • the masking layer is located between the Bragg mirror and the
  • the masking layer may be in direct contact with the Bragg mirror and / or with the semiconductor layer sequence.
  • Masking layer with a coverage of at least 20% or at least 50% or at least 55% applied to the Bragg mirror.
  • the Bragg mirror Preferably, the
  • the semiconductor chip comprises a coalescing layer.
  • the coalescing layer can be part of the functional semiconductor layer sequence or lie outside the functional semiconductor layer sequence.
  • the coalescing layer is formed of doped or undoped GaN. A thickness of
  • the coalescing layer is at least 300 nm or at least 400 nm and alternatively or additionally at most 3 ⁇ m or at most 1.2 ⁇ m.
  • Coalescing layer of openings in the masking layer thus preferably touches a layer of the Bragg layer closest to the semiconductor layer sequence.
  • the layer of the Bragg mirror closest to the semiconductor layer sequence is preferably one of the first partial layers.
  • the coalescing layer forms a coherent layer.
  • Coalescing layer especially in direct contact, an intermediate layer grown.
  • the intermediate layer is preferably an AlGaN layer having an aluminum content of between 75% and 100% inclusive.
  • Intermediate layer is preferably between 5 nm and 50 nm inclusive, in particular between 10 nm and 20 nm inclusive. It may be doped, the intermediate layer. In accordance with at least one embodiment, a plurality of intermediate layers are present, wherein the intermediate layers in each case within the scope of the manufacturing tolerances equal
  • Interlayers are preferably each a GaN layer, which may be doped or undoped.
  • the GaN layer is also preferably in direct contact with the two adjacent intermediate layers.
  • a thickness of the GaN layer is then preferably at least 20 nm or at least 50 nm or at least 500 nm and can
  • the Bragg mirror comprises at least two or at least three or at least five of the first and the second partial layers.
  • the Bragg mirror includes at most 20 or at most 10 or at most 5 of the first and the second partial layers.
  • the Bragg mirror preferably has an increased number of first partial layers by one, based on the number of second partial layers.
  • the Bragg mirror is bounded in each case by a respective one of the first partial layer both on the side facing the carrier and on the side facing the semiconductor layer sequence.
  • a method for producing an optoelectronic semiconductor chip is specified.
  • a semiconductor chip is produced as indicated in connection with one or more of the above-mentioned embodiments.
  • Features of the method are therefore also disclosed for the optoelectronic semiconductor chip and vice versa.
  • the method comprises at least or exclusively the following steps:
  • the carrier remains in the finished semiconductor chip on the Bragg mirror and the Bragg mirror remains on the semiconductor layer sequence.
  • At least the first partial layer of the Bragg mirror closest to the carrier which is particularly preferably located directly on the carrier top side, is produced by sputtering.
  • sputtering can produce thick layers comparatively cost-effectively and at high growth rates.
  • up to 1 ⁇ m thick layers can be deposited, for example, from AlN.
  • the equipment in which the sputtering is performed may be gallium-free.
  • Gallium is in one
  • Epitaxy plant for MOVPE typically present as an impurity since gallium-containing layers are required especially for emitting in the blue spectral light emitting diodes. Contamination of gallium may be associated with
  • Meltback refers to a brownish, relatively soft compound of gallium and silicon. Through the gallium, silicon is released from the growth substrate and it result in a blossoming and holes in one
  • graphite holders are typically used due to the high temperatures in the MOVPE process.
  • the graphite holder can be covered by a thin, whitish layer of aluminum and / or gallium in the MOVPE, resulting in a
  • Gas phase epitaxy reactor is the occupancy of the
  • all sublayers of the Bragg mirror are produced by sputtering.
  • some of the sublayers can be made by gas phase epitaxy.
  • the masking layer can also be produced by sputtering.
  • the sputtering has a temperature between inclusive
  • a pressure during sputtering is in particular between 10 ⁇ 3 mbar and once 10 ⁇ 2 mbar.
  • a growth rate during sputtering is preferably at least 0.03 nm / s and / or at most 0.5 nm / s.
  • Sputtering is preferably carried out under an atmosphere of argon and nitrogen.
  • a ratio of argon to nitrogen is preferably 1: 2, with a tolerance of at most 15% or at most 10%.
  • the sputtering is a so-called pulsed sputtering. For example, then there are several sources, among which the
  • Growth substrate rotates. For example, Al and N are then alternately and sequentially deposited at a particular location of the growth substrate. For example, a frequency at which the growth substrate is rotated is on the order of 1 Hz.
  • the Bragg mirror and, if appropriate, the heat spreader are produced in a sputtering deposition system and the
  • Semiconductor layer sequence is grown in a different gas phase epitaxy reactor.
  • the sputter deposition system is free of gallium and / or free of graphite.
  • FIGS 1 to 5 are schematic sectional views of
  • Figure 1 is an embodiment of a
  • Semiconductor chip 1 comprises a carrier 2 with a
  • the carrier 2 is
  • Layer 60 is generated.
  • the carrier 2 is a so-called foreign substrate that is made of another
  • the carrier 2 may be a silicon substrate.
  • a Bragg mirror 3 is generated, preferably by means of sputtering.
  • the Bragg mirror 3 has a plurality of first partial layers 31 and a plurality of second partial layers 32.
  • the number of partial layers 31, 32 may differ from the illustrated number.
  • the Bragg mirror 3 is on either side of one of the first
  • Sublayers 31 limited. All first partial layers 31 and all second partial layers 32 are preferably each made of the same material.
  • the first partial layers 31 are in particular made of A1N
  • the second partial layers 32 are made of a
  • Material formed with a smaller refractive index such as a silicon oxide or a silicon nitride.
  • Sublayers 31, 32 each have an optical thickness which corresponds to a quarter of a main wavelength, English peak wavelength, which corresponds to the radiation generated in the semiconductor layer sequence 6 during operation.
  • the semiconductor layer sequence 6 is generated directly, in particular by organometallic
  • the semiconductor layer sequence 6 is based on InAlGaN and comprises at least one of
  • Provision of radiation generated active layer 60 A the support 2 facing away from the boundary surface of the
  • Semiconductor layer sequence 6 represents a
  • Radiation exit side 65 It is possible that to improve a radiation decoupling the
  • Radiation exit side 65 is structured, for example by means of a roughening.
  • FIG. 2 shows a further exemplary embodiment of the invention
  • the first partial layer 31 closest to the carrier 2 has a thickness deviating from the other first partial layers 31.
  • the nearest sub-layer 31 about 100 nm and the thicknesses of the other sub-layers 31 are each about 50 nm.
  • the nearest to the carrier 2 first sub-layer 31 may thus have a greater thickness than the other first
  • the second sub-layers 32 have
  • Semiconductor layer sequence 6 is a radiation-transmissive
  • Component 9 attached. Such a device 9 may also be present in all other embodiments.
  • the component 9 is, for example, a
  • the component 9 may be an optical element such as a converging lens or a microlens array.
  • a not shown connecting means for example a
  • Adhesive layer are located.
  • a heat spreader 8 is optionally attached to the underside 28 of the carrier 2 facing away from the semiconductor layer sequence 6.
  • the heat spreader 8 may also be present in all other embodiments.
  • the heat spreader 8 is made of the same material as the first
  • Heat spreaders 8 formed from AIN and grown by sputtering on the support base 28.
  • the heat spreader 8 can be sputtered under the same conditions as the first partial layers 31 of the Bragg mirror 3.
  • the heat spreader 8 is preferably produced in front of the Bragg mirror 3 and / or in front of the semiconductor layer sequence 6. A deviating process sequence is also possible.
  • a thickness of the heat spreader 8 preferably corresponds
  • the thickness of the heat spreader 8 is not shown to scale in the figures.
  • the heat spreader 8 preferably has the same or similar thermal expansion property as the heat spreader
  • Burdens on the semiconductor layer sequence 6 can be avoided or at least reduced.
  • the carrier 2 When generating the semiconductor layer sequence 6, the carrier 2 has, for example, an average diameter D of approximately 100 mm or approximately 150 mm or approximately 200 mm.
  • An average thickness t of the carrier 2 is for example in the range of a few 100 ym.
  • the carrier 2 is preferably made comparatively thin. A quotient of the mean diameter D and the average thickness t of the carrier 2 is preferred
  • this quotient is at most 450 or
  • a masking layer 4 for example of SiN or S1O2, is attached to the mirror top side 36.
  • the masking layer 4 has Openings 40.
  • the openings 40 in the masking layer are produced for example photolithographically,
  • the masking layer 4 is made of S1O2
  • the coalescing layer 5 is formed, in particular, from n-doped GaN or, preferably, undoped GaN.
  • the active layer 60 is formed by a plurality of InGaN-based quantum well structures with barrier layers therebetween. On a side of the active layer 60 facing away from the carrier 2 there is a p-doped GaN layer.
  • n-type GaN layer and the p-type GaN layer may be combined with
  • Semiconductor layer sequence 6 takes place with the aid of or through the n-GaN layer.
  • an optional one is located between the coalescence layer 5 and the semiconductor layer sequence 6
  • the interlayer 56 is preferably formed of AlGaN having an Al content of between 75% and 100% inclusive, and has, for example, a thickness of between 15 nm and 20 nm inclusive.
  • Interlayers are present. Between adjacent ones Intermediate layers are then preferably each doped GaN layers, not drawn.
  • the Bragg mirror 3 is produced on the carrier underside 28 opposite the semiconductor layer sequence 6 and the semiconductor layer sequence 6 on the carrier top side 21.
  • the carrier 2 is preferably a growth substrate for the carrier
  • Semiconductor layer sequence 6 for example, a sapphire substrate which is radiation-transmissive.
  • the Bragg mirror 3 is preferably produced directly on the carrier 2.
  • the Bragg mirror then preferably functions as a heat spreader 8.
  • an AIN layer, an AlGaN layer, a layer corresponding to the first sublayer of the Bragg mirror closest to the carrier, a masking layer can be arranged between the carrier 2 and the semiconductor layer sequence 6 Coalescing layer and / or an intermediate layer, as in connection in particular with FIGS. 3 and 4

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Dans au moins un mode de réalisation, la puce de semi-conducteur optoélectronique (1) comprend un substrat (2) ainsi qu'un miroir de Bragg (3) doté d'au moins une première couche partielle (31) et d'au moins une deuxième couche partielle (32). Une succession de couches semi-conductrices fonctionnelles (6) à base de nitrure de gallium est déposée sur le miroir de Bragg (3) et contient au moins une couche active (60) servant à générer un rayonnement électromagnétique. Le miroir de Bragg (3) est déposé sur le substrat (2). Les premières couches partielles (31) du miroir de Bragg (3) comprennent ou sont constituées d'un nitrure de métal ou d'un nitrure d'un élément du groupe III.
PCT/EP2013/054362 2012-03-14 2013-03-05 Puce de semi-conducteur optoélectronique et procédé de fabrication d'une puce de semi-conducteur optoélectronique WO2013135526A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012102148.1 2012-03-14
DE102012102148A DE102012102148A1 (de) 2012-03-14 2012-03-14 Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

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WO2013135526A1 true WO2013135526A1 (fr) 2013-09-19

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012107001A1 (de) 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN112531086B (zh) * 2020-11-19 2022-01-18 厦门三安光电有限公司 Dbr结构、led芯片、半导体发光器件及制造方法及显示面板

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JPH1117223A (ja) * 1997-06-25 1999-01-22 Toshiba Corp 窒化ガリウム系半導体発光素子および発光装置
WO2005112138A1 (fr) * 2004-05-06 2005-11-24 Cree, Inc. Procede de decollement pour films gan formes sur des substrats sic et dispositifs obtenus utilisant ce procede
WO2007052840A1 (fr) * 2005-11-07 2007-05-10 Showa Denko K.K. Diode electroluminescente semi-conductrice
DE10034263B4 (de) 2000-07-14 2008-02-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Quasisubstrats
US20080179606A1 (en) * 2007-01-25 2008-07-31 Usuda Manabu Nitride semiconductor light emitting device
US20090142870A1 (en) 2007-05-02 2009-06-04 Showa Denko K.K. Manufacturing method of group iii nitride semiconductor light-emitting device
EP2362443A2 (fr) * 2010-02-25 2011-08-31 LG Innotek Co., Ltd. Dispositif électroluminescent, emballage de dispositif électroluminescent et système d'éclairage

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JP2011009524A (ja) * 2009-06-26 2011-01-13 Hitachi Cable Ltd 発光素子及び発光素子の製造方法
JP2011054862A (ja) * 2009-09-04 2011-03-17 Hitachi Cable Ltd エピタキシャルウエハ、発光素子、エピタキシャルウエハの製造方法、及び発光素子の製造方法
US20120043567A1 (en) * 2010-08-18 2012-02-23 Liang-Jyi Yan Led structure with bragg film and metal layer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117223A (ja) * 1997-06-25 1999-01-22 Toshiba Corp 窒化ガリウム系半導体発光素子および発光装置
DE10034263B4 (de) 2000-07-14 2008-02-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Quasisubstrats
WO2005112138A1 (fr) * 2004-05-06 2005-11-24 Cree, Inc. Procede de decollement pour films gan formes sur des substrats sic et dispositifs obtenus utilisant ce procede
WO2007052840A1 (fr) * 2005-11-07 2007-05-10 Showa Denko K.K. Diode electroluminescente semi-conductrice
US20080179606A1 (en) * 2007-01-25 2008-07-31 Usuda Manabu Nitride semiconductor light emitting device
US20090142870A1 (en) 2007-05-02 2009-06-04 Showa Denko K.K. Manufacturing method of group iii nitride semiconductor light-emitting device
EP2362443A2 (fr) * 2010-02-25 2011-08-31 LG Innotek Co., Ltd. Dispositif électroluminescent, emballage de dispositif électroluminescent et système d'éclairage

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