WO2013131973A1 - Procede de fabrication d'un capteur de pression et capteur correspondant - Google Patents
Procede de fabrication d'un capteur de pression et capteur correspondant Download PDFInfo
- Publication number
- WO2013131973A1 WO2013131973A1 PCT/EP2013/054531 EP2013054531W WO2013131973A1 WO 2013131973 A1 WO2013131973 A1 WO 2013131973A1 EP 2013054531 W EP2013054531 W EP 2013054531W WO 2013131973 A1 WO2013131973 A1 WO 2013131973A1
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- WO
- WIPO (PCT)
- Prior art keywords
- support
- strain gauges
- conductive material
- deformable membrane
- electrical contacts
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/08—Impregnating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00341—Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0069—Electrical connection means from the sensor to its support
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0069—Electrical connection means from the sensor to its support
- G01L19/0076—Electrical connection means from the sensor to its support using buried connections
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0045—Diaphragm associated with a buried cavity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0048—Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/006—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of metallic strain gauges fixed to an element other than the pressure transmitting diaphragm
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/095—Feed-through, via through the lid
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/096—Feed-through, via through the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/008—Transmitting or indicating the displacement of flexible diaphragms using piezoelectric devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49888—Subsequently coating
Definitions
- the invention relates to the manufacture of a micromechanical structure for measuring or detecting a mechanical quantity or a physical quantity and in particular a pressure sensor comprising such a microstructure.
- a pressure sensor comprises a micromechanical structure (in English, “Micro Electro Mechanical Systems” (MEMS)) comprising a deformable membrane assembled to a support partially separated by a cavity in which there is a reference pressure, for example the void.
- MEMS Micro Electro Mechanical Systems
- Strain gauges supported by the membrane can then measure stresses caused by deformations experienced by the membrane subjected to an external energy supply (such as, for example, a pressure P applied to the membrane), while observing the changes in physical properties. and / or electrical structure associated with the deformations (such as for example a change of electrical resistance or internal stresses).
- an external energy supply such as, for example, a pressure P applied to the membrane
- Pressure sensors of this type are intended to be used in hostile environments and must be protected from the outside environment.
- the micromechanical structure is placed in a protective housing: encapsulation of the micromechanical structure (more generally we speak of encapsulation of the micromechanical structure when it comes to protecting the micromechanical structure).
- encapsulation of the micromechanical structure is transmitted from the housing to the strain gauges via a transmission interface generally consisting of oil.
- Such packaging is known by its English name of "packaging”.
- the senor has a limited accuracy by the presence of intermediate elements having interactions with the micromechanical structure (such as oil and glue), affecting in particular the accuracy and long-term stability,
- the encapsulation of the micromechanical structure can be implemented at the time of manufacture of the micromechanical structure (in English, "Wafer Level Packaging").
- a glass paste is often used for connections which creates significant contact resistances, which can change over time due to the effect of temperature.
- Electric wires are used which can weaken the structure.
- the invention is in this context to provide a method of manufacturing a pressure sensor.
- the invention proposes, according to a first aspect, a method of manufacturing a sensor which by its very design allows to group in a single phase the manufacture and protection of a sensitive element of micromechanical structure.
- the invention proposes a method of manufacturing a pressure sensor comprising the following steps: assembling a support substrate with a deformable membrane on which strain gauges have been deposited, the deformable membrane comprising a zone thinned at its center, the support substrate being disposed above the deformable membrane, the support substrate comprising a surface upper, a lower surface in contact with the deformable membrane, the support substrate further comprising lateral recesses disposed above the strain gauges and a central recess disposed above the thinned zone of the membrane, this to obtain a micromechanical structure ; and once the assembly is performed, the method comprising the following step:
- the one or more conductive material (s) is chosen from the following group: ultra-doped polysilicon, Au, Ag, Ni, Pt, TiW, Cu, Pd, Al, Ti, TiN;
- the membrane is made of silicon and the support is made of glass, the assembly consisting of anodic sealing; or the support is made of silicon, the assembly consisting of a sealing by means of a connection molecular or atomic with or without an intermediate layer, or by brazing;
- - It comprises a step of: integrating the support to a housing comprising electrical contacts of conductive material; the support being integrated into the housing via the connectors formed on the support;
- thermocompression method The integration of the support to the housing is performed by a thermocompression method
- thermo-compression process is carried out with a temperature of between 250 ° C. and 500 ° C., typically 320 ° C. with a pressure of between 10 MPa and 200 MPa, typically 50 MPa;
- the electrical contacts of the housing are made of a material chosen from the following group: ultra-doped polysilicon, Au, Ag, Ni, Pt, TiW, Cu, Pd, Al, Ti, TiN;
- the integration of the support substrate into the housing is implemented by means of the flip-chip technique
- the membrane is formed from a substrate, for example made of monocrystalline silicon such as SOI or PSOI, sapphire such as SOS or other materials such as SiCOI or SiC.
- the invention also relates to a pressure sensor obtained by a method according to the invention.
- the invention proposes, according to a second aspect, a pressure sensor obtained by a method according to the first aspect of the invention.
- the invention has many advantages.
- the assembly of the support with the deformable membrane being performed before the deposition of at least one conductive material to then obtain the electrical contacts, the choice of materials is greater than that of known techniques.
- the invention makes it possible to avoid using additional elements to create the connection at the level of the strain gages: the deposit of the conductive material is carried out in a single step and leads to the formation of electrical contacts.
- the method of the invention allows to deposit several successive conductive materials after assembly to improve the electrical contacts on the one hand, and facilitate the integration of the support to a connection box on the other.
- the method also makes it possible to deposit, after assembly between the support and the deformable membrane, a diffusion barrier which prevents diffusion of the material used for the electrical contacts in the strain gauges.
- the quality of assembly of the support with the deformable membrane is increased because the surface quality of the two components is unaltered by the etching steps which are carried out in this case downstream of the assembly.
- the sealing temperature is not limited by the choice of conductive materials.
- Another advantage is that the electrical connection by direct metal contact has a negligible contact resistance with respect to the measurement itself, and is not subject to temperature variations.
- the integration by the technique called the flip chip in one step does not require a contribution of other materials that could create limitations during the manufacturing process and / or mechanical stresses between materials due to integration by thermocompression.
- FIG. 1 d illustrates a deposit of a diffusion barrier according to a second embodiment of the invention
- FIGS. 2a and 2b illustrate the deposition of one or more conductive materials according to a method according to a first embodiment of the invention
- FIGS. 2c and 2d illustrate the deposition of one or more conductive materials according to a method according to a second embodiment of the invention
- FIGS. 3 and 4 illustrate the packaging according to, respectively, a method according to a first and a second embodiment of the invention
- FIG. 5 illustrates steps of a method according to one embodiment of the invention.
- a pressure sensor comprises in particular a support 10 and a deformable membrane 20, strain gauges 30 and assembly supports 40 arranged between the support 10 and the membrane 20.
- the measurement of the pressure can be absolute or differential.
- micromechanical structure formed by the deformable membrane and the strain gauges are thus protected by the support 10.
- the micromechanical structure is electrically connected to a housing 80 through the support 10 which includes electrical contacts 61, the housing 80 also comprising electrical contacts 81 disposed therein.
- the deformable membrane 20 comprises an upper surface 201 and a lower surface 202, a pressure-sensitive diaphragm / or thin part 20b suspended above a free space and a thick part 20a forming a support for the thin part. 20b.
- Such a membrane 20 is typically formed from a substrate, for example consisting of monocrystalline silicon such as SOI or PSOI, sapphire such as SOS or other materials such as SiCOI or SiC.
- the free space (at the thin portion 20b of the membrane) is advantageously formed by micromachining.
- the micromachining techniques used to form such a free space may for example be chemical etching, such as a KOH etching at a predetermined temperature and / or a deep etching by reactive ions (in English, "Deep Reactive Ion Etch “(DRIE)) in a surface substrate of plane origin.
- chemical etching such as a KOH etching at a predetermined temperature and / or a deep etching by reactive ions (in English, "Deep Reactive Ion Etch "(DRIE)) in a surface substrate of plane origin.
- the thicknesses of such a membrane 20 are several tens of microns, from 100 ⁇ to ⁇ ⁇ , typically 500 ⁇ for the thick part 20a, and from 10 to 200 ⁇ for the thin part 20b.
- the deformable membrane 20 comprises on its upper part strain gauges 30.
- the strain gauges 30 consist of monocrystalline silicon microstructures located on the upper surface 201 of the deformable membrane 20 (see Figure 1a). Typically, these microstructures are usually formed from an initial silicon layer etched by photolithography and chemical etching or plasma.
- the strain gauges 30 are preferably arranged in the zone of maximum mechanical stress of the deformable membrane 20.
- the deformable membrane 20 further comprises on its upper surface 201 assembly supports 40 which are deposited at the ends of the thick part 20b of the deformable membrane 20. It is also possible to provide on the upper surface 201 of the deformable membrane 20 an electrically insulating layer (not shown) such as a layer of S1O2. The strain gauges 30 and the assembly supports 40 being in this case deposited on the electrically insulating layer.
- the support 10 has an external section identical to that of the deformable membrane 20.
- the support 10 further comprises an upper surface 101 and a lower surface 102 which is intended to be in contact with the upper surface 201 of the deformable membrane 20 during of a process which will be described later.
- the support 10 comprises lateral recesses 11 which are formed to face the strain gauges 30 and a central recess 50 formed to face the thin portion 20b of the deformable membrane when the membrane 20 and the support 10 are assembled.
- the support 10 preferably comprises at least four lateral recesses 11.
- the lateral recesses 1 1 advantageously have a circular section.
- the lateral recesses 11 and the central recess 50 are formed from a substrate by micromachining techniques such as a KOH etching at a predetermined temperature and / or a deep etching by reactive ions (" Deep Reactive Ion Etch “, (DRIE)) in a surface substrate of planar origin.
- DRIE Deep Reactive Ion Etch
- the support 10 may be a material based on glass, quartz silicon, pyrex TM, sapphire, alumina, Si, SiC.
- the support 10 has, for example, a thickness of between 50 and 1000 pm.
- a support 10 is assembled E1 to a deformable membrane 20 on which strain gauges 30 and 40 mounting brackets have been previously deposited.
- the assembly E1 can be carried out by implementing anodic sealing or by means of a molecular or atomic bond with or without an intermediate layer, or by soldering.
- E2 is deposited, in a single step, at least one conductive material 60 in the lateral recesses 11 of the support 10 and on the upper surface 101 of the support 10.
- the conductive material 60 extends into the lateral recesses 1 1 to be in contact with the strain gauges (30) and then to form electrical contacts 61 in connection with the strain gauges 30.
- Such a deposit E2 comprises in particular the deposition of a film of material (x) conductor (s) on the upper surface 101 of the support 10 (opposite the lower surface 102 of the support 10 in contact with the deformable membrane 20).
- the conductive material (s) 60 may be an ultra-doped polysilicon film superimposed on a metal, a metal deposit alone, or a composition of several metal layers.
- the conductive material (s) 60 are chosen from the following group: ultra-doped polysilicon, Au, Ag, Ni, Pt, TiW, Cu, Pd, ⁇ , ⁇ , ⁇ .
- the deposition of at least one conductive material 60 is preferably carried out by a low pressure chemical vapor deposition technique (Low Pressure Chemical Vapor Deposition (LPCVD)), but can also be carried out by evaporation , plating or spraying.
- LPCVD Low Pressure Chemical Vapor Deposition
- Such a deposit E2 has the advantage of being able to deposit a thick film of conductive material 60 having a thickness of up to several tens of ⁇ , in particular in deep cavities of the support 10 which could have been obtained by the microphone machining of the support 10 to make the recesses 1 1. In other words, the conductive material 60 fills all the cavities of the walls of the lateral recesses 11.
- the conductive material or materials 60 are deposited on the whole of the upper surface 101 of the support 10 and in the recesses 11 1 side (see Figure 2).
- the manufacturing method comprises a step E3 for forming the electrical contacts 61.
- a step E3 is implemented by photolithography associated with a hot rolling 3D technique or spray coating of a photosensitive material (in English, "spray coating"). In this way, the useful areas of the electrical contacts 61 are precisely restricted.
- the 3D photolithography technique associated with a hot rolling or spray-coating technique of a photosensitive material makes it possible to define deposition zones and zones of savings on surfaces having a strong topology; this technique makes it possible to control the homogeneity of the deposit, even on inclined surfaces or at the bottom of the cavities.
- this technique makes it possible to define structures of the order of ten to a few tens of microns at the bottom of the recesses 11 which are of the order of ⁇ , for a width at the base of the order of ⁇ ⁇ .
- the 3D photolithography makes it possible to machine the materials thus deposited after the assembly step E1 between the support 10 and the membrane 20, and thus to be able to realize E3 complex structured shapes with variations of heights of several hundred ⁇ , such as the interior of the recesses 1 1.
- the electrical contacts 61 are connected to the strain gauges 30 (see FIG. 2b) and extend from the upper surface 101 of the support 10.
- the manufacturing method comprises a depositing step E10 in each lateral recess January 1, of a diffusion barrier 31 in contact with the corresponding strain gauges (30) (see Figure 1d).
- the diffusion barrier 31 is made of a metal such as TiW, TiN, Pt, Ta, etc. More generally, the diffusion barrier 31 consists of a material whose properties allow it to block the diffusion of another atomic species in the strain gauges 30.
- step E3 the electrical contacts are formed.
- the diffusion barrier 31 is made of a conductive material such as the material used to form the electrical contacts.
- the electrical contacts 61 are, in this embodiment, in contact with the diffusion barrier 31 itself in contact with the corresponding strain gauge 30.
- the diffusion barrier then participates in the electrical contact 61 formed in each recess 11.
- E4 is integrated with the deformable membrane support structure 20 into a housing 80 comprising electrical contacts 81.
- the electrical contacts of the housing 80 are made of material chosen from the following group: ultra-doped polysilicon, Au, Ag, Ni, Pt, TiW, Cu, Pd, Al, Ti, TiN.
- the housing 80 may be made of different materials, based on glass, ceramic or metal, or an assembly of the three, and have various shapes.
- the electrical contacts 81 of the housing 80 are arranged such that they face the electrical contacts 61 of the support 10.
- the connection Electrical contact between the contacts 61 and the contacts 81 can be done by the technique of wireless wiring (in English, "wire bonding") (technique conventionally used for pressure sensors) or by a direct contact technique.
- the electrical contacts 81 of the housing 80 extend outwardly of the housing 80 to enable the acquisition of the electrical signals generated during the measurement of the pressure P.
- thermocompression process can be implemented in particular at a temperature of between 200 ° C. and 500 ° C., and at a pressure of between 10 MPa and 250 MPa.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BR112014022052-2A BR112014022052B1 (pt) | 2012-03-06 | 2013-03-06 | Processo de fabricação de um sensor de pressão |
CN201380022007.7A CN104508447B (zh) | 2012-03-06 | 2013-03-06 | 压力传感器的生产方法和相应的传感器 |
JP2014560360A JP6122880B2 (ja) | 2012-03-06 | 2013-03-06 | 圧力センサ及び対応するセンサの製造方法 |
CA2866388A CA2866388C (fr) | 2012-03-06 | 2013-03-06 | Procede de fabrication d'un capteur de pression et capteur correspondant |
ES13707416T ES2743457T3 (es) | 2012-03-06 | 2013-03-06 | Procedimiento de fabricación de un sensor de presión y sensor correspondiente |
US14/383,092 US9643836B2 (en) | 2012-03-06 | 2013-03-06 | Method for producing a pressure sensor and corresponding sensor |
EP13707416.7A EP2823273B1 (fr) | 2012-03-06 | 2013-03-06 | Procede de fabrication d'un capteur de pression |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR1252042 | 2012-03-06 | ||
FR1252042A FR2987892B1 (fr) | 2012-03-06 | 2012-03-06 | Procede de fabrication d'un capteur de pression et capteur correspondant |
Publications (1)
Publication Number | Publication Date |
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WO2013131973A1 true WO2013131973A1 (fr) | 2013-09-12 |
Family
ID=47790258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2013/054531 WO2013131973A1 (fr) | 2012-03-06 | 2013-03-06 | Procede de fabrication d'un capteur de pression et capteur correspondant |
Country Status (9)
Country | Link |
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US (1) | US9643836B2 (fr) |
EP (1) | EP2823273B1 (fr) |
JP (1) | JP6122880B2 (fr) |
CN (1) | CN104508447B (fr) |
BR (1) | BR112014022052B1 (fr) |
CA (1) | CA2866388C (fr) |
ES (1) | ES2743457T3 (fr) |
FR (1) | FR2987892B1 (fr) |
WO (1) | WO2013131973A1 (fr) |
Cited By (2)
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EP3001168A1 (fr) * | 2014-09-09 | 2016-03-30 | Robert Bosch Gmbh | Systeme de capteur micro-mecanique et procede de fabrication correspondant |
EP3001166A1 (fr) * | 2014-09-09 | 2016-03-30 | Robert Bosch Gmbh | Systeme de capteur micro-mecanique et procede de fabrication correspondant |
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FR2982023B1 (fr) * | 2011-10-26 | 2015-03-06 | Auxitrol Sa | Structure micromecanique a membrane deformable et a protection contre de fortes deformations |
US9891124B2 (en) * | 2013-05-24 | 2018-02-13 | Hitachi Metals, Ltd. | Pressure sensor, and mass flow meter, and mass flow controller using same |
US10163660B2 (en) * | 2017-05-08 | 2018-12-25 | Tt Electronics Plc | Sensor device with media channel between substrates |
JP6950268B2 (ja) * | 2017-05-12 | 2021-10-13 | コニカミノルタ株式会社 | クリーニング装置、画像形成装置及びプログラム |
US11174157B2 (en) * | 2018-06-27 | 2021-11-16 | Advanced Semiconductor Engineering Inc. | Semiconductor device packages and methods of manufacturing the same |
CN112723301A (zh) * | 2020-12-21 | 2021-04-30 | 苏州长风航空电子有限公司 | 一种航空用高频响压力传感器芯片及制备方法 |
US20220236128A1 (en) * | 2021-01-27 | 2022-07-28 | Honeywell International Inc. | Pressure sensor components having microfluidic channels |
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2013
- 2013-03-06 EP EP13707416.7A patent/EP2823273B1/fr active Active
- 2013-03-06 US US14/383,092 patent/US9643836B2/en active Active
- 2013-03-06 CN CN201380022007.7A patent/CN104508447B/zh active Active
- 2013-03-06 ES ES13707416T patent/ES2743457T3/es active Active
- 2013-03-06 WO PCT/EP2013/054531 patent/WO2013131973A1/fr active Application Filing
- 2013-03-06 BR BR112014022052-2A patent/BR112014022052B1/pt active IP Right Grant
- 2013-03-06 CA CA2866388A patent/CA2866388C/fr active Active
- 2013-03-06 JP JP2014560360A patent/JP6122880B2/ja active Active
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EP3001166A1 (fr) * | 2014-09-09 | 2016-03-30 | Robert Bosch Gmbh | Systeme de capteur micro-mecanique et procede de fabrication correspondant |
Also Published As
Publication number | Publication date |
---|---|
EP2823273A1 (fr) | 2015-01-14 |
FR2987892B1 (fr) | 2014-04-18 |
CN104508447A (zh) | 2015-04-08 |
JP6122880B2 (ja) | 2017-04-26 |
EP2823273B1 (fr) | 2019-05-29 |
BR112014022052A8 (pt) | 2021-05-11 |
BR112014022052A2 (pt) | 2020-10-27 |
JP2015511006A (ja) | 2015-04-13 |
CA2866388A1 (fr) | 2013-09-12 |
CA2866388C (fr) | 2021-08-31 |
US9643836B2 (en) | 2017-05-09 |
US20150033878A1 (en) | 2015-02-05 |
BR112014022052B1 (pt) | 2021-06-22 |
FR2987892A1 (fr) | 2013-09-13 |
CN104508447B (zh) | 2017-06-09 |
ES2743457T3 (es) | 2020-02-19 |
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