WO2013121585A1 - Method for manufacturing electronic device and electronic device - Google Patents

Method for manufacturing electronic device and electronic device Download PDF

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Publication number
WO2013121585A1
WO2013121585A1 PCT/JP2012/053858 JP2012053858W WO2013121585A1 WO 2013121585 A1 WO2013121585 A1 WO 2013121585A1 JP 2012053858 W JP2012053858 W JP 2012053858W WO 2013121585 A1 WO2013121585 A1 WO 2013121585A1
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WIPO (PCT)
Prior art keywords
transparent conductive
conductive film
electronic device
electrode
auxiliary electrode
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PCT/JP2012/053858
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French (fr)
Japanese (ja)
Inventor
淳司 高橋
昌紀 駒田
美穂 杉本
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パイオニア株式会社
東北パイオニア株式会社
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Priority to PCT/JP2012/053858 priority Critical patent/WO2013121585A1/en
Publication of WO2013121585A1 publication Critical patent/WO2013121585A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines

Definitions

  • the present invention relates to an electronic device manufacturing method and an electronic device.
  • Transparent conductive film using transparent metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide based transparent conductive film (such as ZAO), SnO 2 based transparent conductive film, titanium dioxide based transparent conductive film Is used as a light-transmitting electrode (transparent electrode) in various electronic devices related to light, such as a light source device, a lighting device, a display device, a solar cell, and a touch panel.
  • transparent metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide based transparent conductive film (such as ZAO), SnO 2 based transparent conductive film, titanium dioxide based transparent conductive film
  • Is used as a light-transmitting electrode (transparent electrode) in various electronic devices related to light such as a light source device, a lighting device, a display device, a solar cell, and a touch panel.
  • Such a transparent conductive film is generally known to have a higher electrical resistance than a metal material, and when this transparent conductive film is used as an electrode, the metal electrode is overlapped with a predetermined range of the transparent conductive film. Lowering the resistance is done.
  • the organic EL element can obtain light emission luminance corresponding to the current flowing between the cathode and the anode, if the resistance value of the wiring electrode is high, light emission occurs when a plurality of organic EL elements are connected to wiring electrodes of different extension distances. Variations in luminance are likely to occur.
  • the wiring electrode connected to the organic EL element has an auxiliary electrode made of a metal film laminated on the electrode pattern of the transparent conductive film to reduce the resistance of the wiring electrode.
  • a metal film is laminated on the transparent conductive film on the substrate, a photoresist pattern serving as an etching mask is formed on the metal film, and then covered with the etching mask.
  • the metal film other than the portion where it is present is removed by etching.
  • an auxiliary electrode having a metal film electrode pattern corresponding to the photoresist pattern is formed (see Patent Document 1 below).
  • the electrode pattern of the transparent conductive film when the electrode pattern of the transparent conductive film is previously formed on the substrate, the electrode pattern of the transparent conductive film and the electrode pattern on the transparent conductive film are formed. There arises a problem that the electrode pattern of the formed auxiliary electrode is likely to be shifted. Further, when the electrode pattern of the auxiliary electrode is formed by the wet etching process, the etching process proceeds under the etching mask, and there is a problem that the electrode pattern of the auxiliary electrode cannot be formed with high accuracy.
  • the electrode pattern of the transparent conductive film and the pattern of the auxiliary electrode made of the metal film can be accurately matched. it can.
  • the transparent conductive film has conductivity but a property different from that of the metal film, when the metal film is laminated on the transparent conductive film by plating, there is a problem that good adhesion cannot be obtained between them. .
  • auxiliary electrode made of a metal film on a transparent conductive film it is necessary to laminate a metal film except for parts that require light transmission, and the auxiliary electrode is formed on the transparent conductive film by plating. In this case, it is necessary to cover a portion of the transparent conductive film that requires light transmission with a mask layer to form a non-plated portion.
  • the masking layer easily causes problems such as peeling off due to the pretreatment. There was a problem that good adhesion between the transparent conductive film and the metal film could not be obtained with the layer maintained normally.
  • the present invention is an example of a problem to deal with such a problem. That is, when forming the auxiliary electrode made of a metal film on the electrode pattern of the transparent conductive film formed as the transparent electrode of the electronic device, the electrode pattern of the auxiliary electrode can be formed without deviation on the electrode pattern of the transparent conductive film. It is an object of the present invention to be able to obtain good adhesion between the transparent conductive film and the metal film when the auxiliary electrode made of the metal film is formed on the transparent conductive film by plating.
  • the present invention includes at least the following configuration.
  • Forming a mask pattern covering a portion requiring transparency and exposing a portion for forming the auxiliary electrode on the transparent conductive film; and an auxiliary electrode made of a metal film by plating on the exposed surface of the transparent conductive film The manufacturing method of the electronic device characterized by having the process of forming.
  • the transparent conductive film has an untreated surface on which a pre-plating treatment surface is formed below the auxiliary electrode and a surface on which the auxiliary electrode is not formed.
  • FIG. 1 is an explanatory view showing a method of manufacturing an electronic device according to an embodiment of the present invention.
  • An electronic device manufacturing method according to an embodiment of the present invention includes as a main component a step of selectively forming an auxiliary electrode made of a metal film on an electrode pattern of a transparent conductive film formed on a substrate.
  • a substrate having an electrode pattern including a transparent electrode is prepared.
  • a transparent conductive film is formed on the substrate, and an electrode pattern including a transparent electrode is formed in a pattern formation process such as a photolithography process.
  • the transparent conductive film here is a transparent metal such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide based transparent conductive film (such as ZAO), SnO 2 based transparent conductive film, or titanium dioxide based transparent conductive film. It is a light-transmitting film using an oxide.
  • a resist layer is formed on the substrate on which the electrode pattern of the transparent conductive film is formed.
  • the resist layer is formed so as to cover the entire surface or a desired region on the substrate by a film forming method such as coating.
  • the material of the resist layer is required to have resistance to the plating pretreatment described later.
  • the polyimide film is suitable as a resist layer having resistance to plating pretreatment.
  • a mask pattern of the resist layer formed on the substrate is formed.
  • the mask pattern is a pattern that covers a portion requiring light transparency on the transparent conductive film and exposes a portion on the transparent conductive film where the auxiliary electrode is formed.
  • a photolithography process can be used for pattern formation, and a desired pattern is formed by selectively exposing and developing the resist layer.
  • a plating pretreatment is performed on the exposed surface on the transparent conductive film.
  • the exposed surface on the transparent conductive film on which the plating pretreatment is performed is a surface not covered with the mask pattern of the resist layer described above.
  • the pre-plating process is performed by immersing the substrate in a processing solution. Conventionally, for example, when a plating pretreatment treatment solution used for copper wiring such as a wiring board is used for a transparent conductive film, sufficient pretreatment is not performed and good plating treatment cannot be performed.
  • the inventors of the present invention have obtained the knowledge that a sufficient pre-plating treatment can be performed when a strong alkaline solution having a pH of 12 or more is used as a treatment solution for a transparent conductive film in an environment of 45 ° C. or more. It was. Moreover, the knowledge that the density of the plating with respect to the transparent conductive film tends to increase in proportion to the pH and temperature of the treatment liquid in the pretreatment for plating was obtained. At this time, it is necessary that the mask pattern of the resist layer covers a desired region even if the plating pretreatment is performed, and the portion on the transparent conductive film covered with the mask pattern of the resist layer is subjected to the plating pretreatment. A pre-plating treatment surface is formed on a portion of the transparent electrode that is not covered with the mask pattern of the resist layer.
  • the pre-plating process performed in the fourth step S4 is a process for improving the adhesion between the transparent conductive film and the metal film formed by the plating process.
  • the pretreatment includes a degreasing process on the transparent conductive film, a surface etching process for roughening the surface of the transparent conductive film, and the like.
  • the previously formed resist layer is exposed to processing.
  • the polyimide film suitable as the resist layer has high chemical resistance and has sufficient resistance to the treatment for improving the adhesion between the transparent conductive film and the metal film, so that the resist layer is dissolved or peeled off. Does not cause problems.
  • the plating pretreatment is performed at least on the area including the exposed surface on the transparent conductive film, and the processing liquid is applied to the area on the substrate where the plating pretreatment is necessary.
  • a coating method may be used.
  • a catalyst such as Pd is applied to the exposed surface on the transparent conductive film that has been subjected to the pre-plating process, and then a metal film is formed by the plating process.
  • an auxiliary electrode made of a metal film is formed at a desired portion on the transparent conductive film.
  • the plating process is performed on the transparent conductive film that has been subjected to the pre-plating process, so that the transparent conductive film and the metal film are bonded together with high adhesion.
  • the electrode pattern of the transparent conductive film and the electrode pattern of the auxiliary electrode can be formed without deviation.
  • the plating process at this time may be either an electroless plating process or an electrolytic plating process.
  • the metal film is made of a simple substance such as Ni, Au, Cu, or Pd or a composite.
  • the auxiliary electrode is formed on a necessary portion on the transparent conductive film by plating, so that the transparent conductive material on which the electrode pattern is formed is formed.
  • the auxiliary electrode can be formed without causing a pattern shift.
  • the pre-plating process is performed on the exposed transparent conductive film, the transparent conductive film and the metal film formed by the plating process can be bonded with high adhesion.
  • the auxiliary electrode can be formed only on the necessary portion by the plating treatment.
  • the transparent conductive film on which the element is formed can be an untreated surface with respect to the pretreatment for plating.
  • FIG. 2 is an explanatory view showing an example of forming a mask pattern of a resist layer in the method for manufacturing an electronic device according to the embodiment of the present invention.
  • a resist layer mask pattern M1 is formed on the transparent conductive film electrode pattern 2 formed on the substrate 1 so as to cover the element formation region L1 in the third step S3 described above.
  • the plating pretreatment in the fourth step S4 described above is performed on the electrode pattern 2 (2A) in the lead-out wiring region L2 formed outside the element forming region L1, and further the fifth step S5 described above.
  • the auxiliary electrode is formed by performing the plating process.
  • the electrode pattern 2 (2B) of the transparent conductive film in the element formation region L1 has an untreated surface that has not been subjected to plating pretreatment, and the electrode pattern 2 (2A) in the lead-out wiring region L2 is pretreated under the auxiliary electrode. Has a surface.
  • FIG. 3 is an explanatory view showing an auxiliary electrode forming step in the method of manufacturing an electronic device according to the embodiment of the present invention.
  • auxiliary electrodes are formed in the lead-out wiring region L2 in FIG.
  • an electrode pattern 2 (2A) of a transparent conductive film is formed in the lead-out wiring region L2 on the substrate 1. Since the mask pattern M1 of the resist layer formed in the third step S3 described above is not formed in the lead-out wiring region L2, the upper and side surfaces of the electrode pattern 2 (2A) of the transparent conductive film are exposed. .
  • the plating pretreatment surface 20 is formed on the upper and side surfaces of the electrode pattern 2 (2A) of the exposed transparent conductive film. Is formed. Thereafter, when the plating process of the fifth step S5 described above is performed, as shown in FIG. 3C, a metal film is deposited so as to cover the upper surface and the side surface of the electrode pattern 2 (2A) of the transparent conductive film. Then, the auxiliary electrode 3 made of a metal film is formed. The auxiliary electrode 3 at this time covers the upper surface and the side surface of the transparent conductive film, and has an R curved surface 3R extending from the side surface to the upper surface. A plating pretreatment surface 2A is formed on the transparent conductive film under the auxiliary electrode 3.
  • FIG. 4 is an explanatory view showing another example of forming a resist layer mask pattern in the method for manufacturing an electronic device according to the embodiment of the present invention.
  • the electrode pattern 2 of the transparent conductive film formed on the substrate 1 is covered with the entire surface on the substrate 1 except for the portion where the auxiliary electrode is formed.
  • a mask pattern M2 is formed.
  • the plating pretreatment in the fourth step S4 described above is performed on the electrode pattern 2 (2A) of the transparent conductive film in the lead wiring region L2, and the plating treatment in the fifth step S5 described above is further performed.
  • An auxiliary electrode is formed.
  • the mask pattern M2 is formed not only in the element formation region L1 but also between the wirings (electrode pattern 2A) in the lead-out wiring region L2, and the entire surface of the substrate 1 covered with the mask pattern M2 is plated. It becomes an unprocessed surface of pre-processing.
  • the protective film on the substrate 1 can be prevented from being damaged by the pre-plating process, and the surface of the substrate 1 itself can be prevented from being scraped by the pre-plating process.
  • the transparent conductive film in the element formation region L1 has an untreated surface that is pre-plated.
  • FIG. 5 is an explanatory view showing an auxiliary electrode forming step in the method of manufacturing an electronic device according to the embodiment of the present invention.
  • auxiliary electrodes are formed in the lead-out wiring region L2 in FIG.
  • a transparent conductive film electrode pattern 2 (2 A) is formed in the lead-out wiring region L 2 on the substrate 1.
  • the mask pattern M2 of the resist layer formed in the third step S3 described above is formed between the electrode patterns 2 (2A), and the transparent conductive film of the electrode pattern 2 (2A) is in a state where only the upper surface is exposed. It has become.
  • the plating pretreatment surface 20 is formed on the upper surface of the electrode pattern 2 (2A) of the exposed transparent conductive film. Is done. Thereafter, when the plating process of the fifth step S5 described above is performed, a metal film is deposited so as to cover the upper surface of the electrode pattern 2 (2A) of the transparent conductive film, as shown in FIG. An auxiliary electrode 3 made of a metal film is formed. At this time, the auxiliary electrode 3 covers the upper surface of the transparent conductive film, and the plating pretreatment surface 20 is formed on the transparent conductive film under the auxiliary electrode 3.
  • the resist layer in the lead-out wiring region L2 is removed simultaneously with the removal of the resist layer in the element formation region (see FIG. 5D).
  • FIG. 6 is an explanatory view showing an auxiliary electrode forming step in the method for manufacturing an electronic device according to the embodiment of the present invention.
  • an organic EL element is formed in the element formation region L1 described above.
  • the electrode pattern 2 (2B) of the transparent conductive film has an unprocessed surface 20S that is pre-plated.
  • the organic EL element 10 is formed by stacking the organic layer 12 and the upper electrode 13 on the lower electrode 11 using the electrode pattern 2 (2B) having the untreated surface 20S as the lower electrode 11.
  • the organic EL element 10 In order to form the organic EL element 10, after removing the resist layer from the substrate 1, the light emitting region La is opened on the portion of the transparent conductive film that requires light transmission of the electrode pattern 2 (2 B). Then, an insulating film 14 is formed on the substrate 1 (FIG. 6A).
  • the insulating film 14 can be formed of the same material as the resist layer described above.
  • the insulating film 14 having the light emitting region La opened can be formed by applying a resist layer of a polyimide film on the substrate 1 again, and selectively exposing and developing.
  • An organic layer 12 is formed on the light emitting region La (FIG. 6B), and further, an upper electrode 13 made of a metal electrode layer is formed on the organic layer 12 (FIG. 6C).
  • the element 10 can be formed.
  • FIG. 7 shows another example of the electronic device manufacturing method according to the embodiment of the present invention.
  • FIG. 7A shows an example of the mask pattern M3 of the resist layer in the third step S3.
  • the mask pattern M3 is formed along the electrode pattern 2 (2B) in the element formation region L1, and the portion corresponding to the bus electrode of the electrode pattern 2 (2B) is exposed.
  • FIG. 7B shows an auxiliary electrode pattern formed in the fifth step S5.
  • auxiliary electrode 3 (3A) serving as a lead-out wiring is formed thereon, and an auxiliary electrode serving as a bus electrode extending along the lower electrode 11 described above on the electrode pattern 2 (2B) in the element formation region L1. 3 (3B) can be formed.
  • FIG. 8 is an explanatory diagram showing a configuration example (configuration example of an organic EL element) of an electronic device manufactured by the manufacturing method described above.
  • An electronic device including the organic EL element 10 includes a substrate 1, a transparent conductive film (lower electrode 11) formed on the substrate 1 and patterned into a predetermined electrode pattern 2 (2B), and a transparent conductive film. And an auxiliary electrode 3 (3B) made of a metal film formed by plating.
  • a pre-plating surface 20 is formed under the auxiliary electrode 3 (3B), and an untreated surface 20S that is not pre-plated is formed on the surface where the auxiliary electrode 3 (3B) is not formed.
  • a light emitting region La is defined on the untreated surface 20S of the transparent conductive film (lower electrode 11) before plating by an insulating film 14, and an organic layer 12 and an upper electrode 13 are stacked on the light emitting region La.
  • a pre-plating treatment is performed on a transparent conductive film, and a metal film is deposited on the pre-plating treatment surface to form an auxiliary electrode.
  • the adhesion between the membrane and the auxiliary electrode can be improved.
  • a polyimide film having resistance to pretreatment for plating is used as a resist layer, and a mask pattern is formed so as to cover a portion requiring light permeability without performing pretreatment for plating and plating treatment. It is possible to reliably protect the portion requiring light transmittance from the pretreatment for plating.
  • the organic layer which comprises an organic EL element is laminated

Abstract

When an auxiliary electrode made of a metal film is formed by plate processing on an electrode pattern made of a transparent conductive film formed as a transparent electrode of an electronic device, good adhesion can be obtained between the transparent conductive film and the metal film. A method for manufacturing an electronic device having a transparent electrode has: a step (S3) of selectively forming a resist layer on a substrate having a transparent conductive film patterned into an electrode pattern including the transparent electrode and forming a mask pattern that covers a part of the transparent conductive film in which light transmitting properties are required and exposes a part of the transparent conductive film in which an auxiliary electrode is to be formed; and a step (S5) of forming an auxiliary electrode made of a metal film on the exposed surface of the transparent conductive film by plate processing.

Description

電子デバイスの製造方法及び電子デバイスElectronic device manufacturing method and electronic device
　本発明は、電子デバイスの製造方法及び電子デバイスに関するものである。 The present invention relates to an electronic device manufacturing method and an electronic device.
　ＩＴＯ（Indium Tin Oxide），ＩＺＯ（Indium Zinc Oxide），酸化亜鉛系透明導電膜（ＺＡＯなど），ＳｎＯ２系透明導電膜，二酸化チタン系透明導電膜などの透明金属酸化物を用いた透明導電膜は、光源装置，照明装置，ディスプレイ装置，太陽電池，タッチパネルなど、光に関連する各種の電子デバイスにおける光透過性を有する電極（透明電極）として用いられている。 Transparent conductive film using transparent metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide based transparent conductive film (such as ZAO), SnO 2 based transparent conductive film, titanium dioxide based transparent conductive film Is used as a light-transmitting electrode (transparent electrode) in various electronic devices related to light, such as a light source device, a lighting device, a display device, a solar cell, and a touch panel.
　このような透明導電膜は、一般に金属材料に比べて電気抵抗が高いことが知られており、この透明導電膜を電極として用いる場合には、透明導電膜の所定範囲に金属電極を重ねて電気抵抗を低くすることが行われている。特に、有機ＥＬ素子は陰極と陽極間を流れる電流に応じた発光輝度が得られるので、配線電極の抵抗値が高いと複数の有機ＥＬ素子をそれぞれ異なる延長距離の配線電極に繋いだ場合に発光輝度にばらつきが生じ易くなる。これを解消するために、有機ＥＬ素子に繋げる配線電極は、透明導電膜の電極パターン上に金属膜からなる補助電極を積層して配線電極の低抵抗化を図っている。 Such a transparent conductive film is generally known to have a higher electrical resistance than a metal material, and when this transparent conductive film is used as an electrode, the metal electrode is overlapped with a predetermined range of the transparent conductive film. Lowering the resistance is done. In particular, since the organic EL element can obtain light emission luminance corresponding to the current flowing between the cathode and the anode, if the resistance value of the wiring electrode is high, light emission occurs when a plurality of organic EL elements are connected to wiring electrodes of different extension distances. Variations in luminance are likely to occur. In order to solve this problem, the wiring electrode connected to the organic EL element has an auxiliary electrode made of a metal film laminated on the electrode pattern of the transparent conductive film to reduce the resistance of the wiring electrode.
　従来、透明導電膜上に補助電極を形成するには、基板上の透明導電膜上に金属膜を積層し、その上にエッチングマスクとなるフォトレジストのパターンを形成して、エッチングマスクで被われている箇所以外の金属膜をエッチング処理で除去する。これによって、フォトレジストのパターンに対応した金属膜の電極パターンを有する補助電極が形成される（下記特許文献１参照）。 Conventionally, in order to form an auxiliary electrode on a transparent conductive film, a metal film is laminated on the transparent conductive film on the substrate, a photoresist pattern serving as an etching mask is formed on the metal film, and then covered with the etching mask. The metal film other than the portion where it is present is removed by etching. As a result, an auxiliary electrode having a metal film electrode pattern corresponding to the photoresist pattern is formed (see Patent Document 1 below).
特開２００４－１７８８３９号公報JP 2004-178839 A
　前述した従来技術のように、エッチング処理によって補助電極のパターンを形成する方法では、基板上に予め透明導電膜の電極パターンが形成されている場合には、透明導電膜の電極パターンとその上に形成される補助電極の電極パターンにズレが生じ易い問題が生じる。また、ウエットエッチング処理によって補助電極の電極パターンを形成する場合には、エッチングマスクの下にまでエッチング処理が進行して補助電極の電極パターンを高精度に形成できない問題が生じる。 In the method of forming the auxiliary electrode pattern by the etching process as in the prior art described above, when the electrode pattern of the transparent conductive film is previously formed on the substrate, the electrode pattern of the transparent conductive film and the electrode pattern on the transparent conductive film are formed. There arises a problem that the electrode pattern of the formed auxiliary electrode is likely to be shifted. Further, when the electrode pattern of the auxiliary electrode is formed by the wet etching process, the etching process proceeds under the etching mask, and there is a problem that the electrode pattern of the auxiliary electrode cannot be formed with high accuracy.
　これに対して、メッキ処理によって透明導電膜の上に金属膜を析出させて補助電極を形成する方法では、透明導電膜の電極パターンと金属膜からなる補助電極のパターンを正確に一致させることができる。しかしながら、透明導電膜は導電性を有するものの金属膜とは異なる性質を有するので、メッキ処理によって透明導電膜上に金属膜を積層させると、両者間に良好な密着性が得られない問題が生じる。 On the other hand, in the method of forming an auxiliary electrode by depositing a metal film on the transparent conductive film by plating, the electrode pattern of the transparent conductive film and the pattern of the auxiliary electrode made of the metal film can be accurately matched. it can. However, since the transparent conductive film has conductivity but a property different from that of the metal film, when the metal film is laminated on the transparent conductive film by plating, there is a problem that good adhesion cannot be obtained between them. .
　一方、透明導電膜上に金属膜からなる補助電極を形成するには、光透過性が必要な部分を除いて金属膜を積層させる必要があり、メッキ処理によって透明導電膜上に補助電極を形成する場合には、透明導電膜上の光透過性が必要な部分をマスク層で被って非メッキ処理部にすることが必要になる。この際、前述したメッキ処理による金属膜と透明導電膜の密着性を確保するために、各種の前処理を行おうとすると、この前処理によって前述したマスク層に剥がれ等の不具合が生じ易く、マスク層を正常に維持した状態で透明導電膜と金属膜の良好な密着性を得ることができない問題があった。 On the other hand, in order to form an auxiliary electrode made of a metal film on a transparent conductive film, it is necessary to laminate a metal film except for parts that require light transmission, and the auxiliary electrode is formed on the transparent conductive film by plating. In this case, it is necessary to cover a portion of the transparent conductive film that requires light transmission with a mask layer to form a non-plated portion. At this time, if various pretreatments are performed in order to ensure the adhesion between the metal film and the transparent conductive film by the plating process described above, the masking layer easily causes problems such as peeling off due to the pretreatment. There was a problem that good adhesion between the transparent conductive film and the metal film could not be obtained with the layer maintained normally.
　本発明は、このような問題に対処することを課題の一例とするものである。すなわち、電子デバイスの透明電極として形成された透明導電膜の電極パターン上に金属膜からなる補助電極を形成するに際して、透明導電膜の電極パターン上にズレ無く補助電極の電極パターンを形成することができること、メッキ処理によって透明導電膜上に金属膜からなる補助電極を形成するに際して、透明導電膜と金属膜の間で良好な密着性を得ることができること、などが本発明の目的である。 The present invention is an example of a problem to deal with such a problem. That is, when forming the auxiliary electrode made of a metal film on the electrode pattern of the transparent conductive film formed as the transparent electrode of the electronic device, the electrode pattern of the auxiliary electrode can be formed without deviation on the electrode pattern of the transparent conductive film. It is an object of the present invention to be able to obtain good adhesion between the transparent conductive film and the metal film when the auxiliary electrode made of the metal film is formed on the transparent conductive film by plating.
　このような目的を達成するために、本発明は、以下の構成を少なくとも具備するものである。 In order to achieve such an object, the present invention includes at least the following configuration.
　透明電極を有する電子デバイスの製造方法であって、前記透明電極を含む電極パターンにパターニングされた透明導電膜を有する基板上に、レジスト層を選択的に形成して、前記透明導電膜上の光透過性を要する部分を被い且つ前記透明導電膜上の補助電極を形成する部分を露出させたマスクパターンを形成する工程と、前記透明導電膜上の露出面にメッキ処理によって金属膜による補助電極を形成する工程を有することを特徴とする電子デバイスの製造方法。 A method of manufacturing an electronic device having a transparent electrode, wherein a resist layer is selectively formed on a substrate having a transparent conductive film patterned into an electrode pattern including the transparent electrode, and light on the transparent conductive film is formed. Forming a mask pattern covering a portion requiring transparency and exposing a portion for forming the auxiliary electrode on the transparent conductive film; and an auxiliary electrode made of a metal film by plating on the exposed surface of the transparent conductive film The manufacturing method of the electronic device characterized by having the process of forming.
　基板と、前記基板上に形成され、所定の電極パターンにパターニングされた透明導電膜と、前記透明導電膜上の一部に形成され、メッキ処理によって形成された金属膜からなる補助電極とを備え、前記透明導電膜は、前記補助電極の下にメッキ前処理面が形成され、前記補助電極が形成されていない面にメッキ前処理の未処理面を有することを特徴とする電子デバイス。 A substrate, a transparent conductive film formed on the substrate and patterned into a predetermined electrode pattern, and an auxiliary electrode made of a metal film formed on a part of the transparent conductive film and formed by plating. The transparent conductive film has an untreated surface on which a pre-plating treatment surface is formed below the auxiliary electrode and a surface on which the auxiliary electrode is not formed.
本発明の一実施形態に係る電子デバイスの製造方法を示した説明図である。It is explanatory drawing which showed the manufacturing method of the electronic device which concerns on one Embodiment of this invention. 本発明の実施形態に係る電子デバイスの製造方法におけるレジスト層のマスクパターンの形成例を示した説明図である。It is explanatory drawing which showed the example of formation of the mask pattern of the resist layer in the manufacturing method of the electronic device which concerns on embodiment of this invention. 本発明の実施形態に係る電子デバイスの製造方法における補助電極の形成工程を示した説明図である。It is explanatory drawing which showed the formation process of the auxiliary electrode in the manufacturing method of the electronic device which concerns on embodiment of this invention. 本発明の実施形態に係る電子デバイスの製造方法におけるレジスト層のマスクパターンの他の形成例を示した説明図である。It is explanatory drawing which showed the other example of the mask pattern of the resist layer in the manufacturing method of the electronic device which concerns on embodiment of this invention. 本発明の実施形態に係る電子デバイスの製造方法における補助電極の形成工程を示した説明図である。It is explanatory drawing which showed the formation process of the auxiliary electrode in the manufacturing method of the electronic device which concerns on embodiment of this invention. 本発明の実施形態に係る電子デバイスの製造方法における有機ＥＬ素子の形成工程を示した説明図である。It is explanatory drawing which showed the formation process of the organic EL element in the manufacturing method of the electronic device which concerns on embodiment of this invention. 本発明の実施形態に係る電子デバイスの製造方法の他の形態例を示している。The other example of the form of the manufacturing method of the electronic device which concerns on embodiment of this invention is shown. 本発明の実施形態に係る電子デバイスの製造方法によって製造される電子デバイスの構成例（有機ＥＬ素子の構成例）を示した説明図である。It is explanatory drawing which showed the structural example (configuration example of an organic EL element) of the electronic device manufactured by the manufacturing method of the electronic device which concerns on embodiment of this invention.
　以下、図面を参照しながら本発明の実施形態を説明する。本発明の実施形態は図示の内容を含むがこれのみに限定されるものではない。図１は本発明の一実施形態に係る電子デバイスの製造方法を示した説明図である。本発明の実施形態に係る電子デバイスの製造方法は、基板上に形成された透明導電膜の電極パターン上に選択的に金属膜からなる補助電極を形成する工程を主要な構成として備えている。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. The embodiment of the present invention includes the contents shown in the drawings, but is not limited thereto. FIG. 1 is an explanatory view showing a method of manufacturing an electronic device according to an embodiment of the present invention. An electronic device manufacturing method according to an embodiment of the present invention includes as a main component a step of selectively forming an auxiliary electrode made of a metal film on an electrode pattern of a transparent conductive film formed on a substrate.
　第１の工程Ｓ１では、透明電極（透明導電膜）を含む電極パターンを有する基板を準備する。そのためには、基板上に透明導電膜を成膜し、フォトリソグラフィ工程などのパターン形成工程で透明電極を含む電極パターンを形成する。ここでの透明導電膜は、ＩＴＯ（Indium Tin Oxide），ＩＺＯ（Indium Zinc Oxide），酸化亜鉛系透明導電膜（ＺＡＯなど），ＳｎＯ２系透明導電膜，二酸化チタン系透明導電膜などの透明金属酸化物を用いた光透過性の膜である。 In the first step S1, a substrate having an electrode pattern including a transparent electrode (transparent conductive film) is prepared. For this purpose, a transparent conductive film is formed on the substrate, and an electrode pattern including a transparent electrode is formed in a pattern formation process such as a photolithography process. The transparent conductive film here is a transparent metal such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), zinc oxide based transparent conductive film (such as ZAO), SnO 2 based transparent conductive film, or titanium dioxide based transparent conductive film. It is a light-transmitting film using an oxide.
　第２の工程Ｓ２では、透明導電膜の電極パターンが形成された基板上にレジスト層を形成する。レジスト層は塗布などの成膜方法によって基板上の全面又は所望の領域を被うように形成される。レジスト層の材料は、後述するメッキ前処理に対して耐性を有することが求められる。ポリイミド膜は、メッキ前処理に対する耐性を備えたレジスト層として適する。 In the second step S2, a resist layer is formed on the substrate on which the electrode pattern of the transparent conductive film is formed. The resist layer is formed so as to cover the entire surface or a desired region on the substrate by a film forming method such as coating. The material of the resist layer is required to have resistance to the plating pretreatment described later. The polyimide film is suitable as a resist layer having resistance to plating pretreatment.
　第３の工程Ｓ３では、基板上に形成したレジスト層のマスクパターンを形成する。マスクパターンは、透明導電膜上の光透過性を要する部分を被い且つ透明導電膜上の補助電極を形成する部分を露出させるパターンである。パターン形成にはフォトリソグラフィ工程を用いることができ、レジスト層を選択的に露光及び現像することで、所望のパターンを形成する。 In the third step S3, a mask pattern of the resist layer formed on the substrate is formed. The mask pattern is a pattern that covers a portion requiring light transparency on the transparent conductive film and exposes a portion on the transparent conductive film where the auxiliary electrode is formed. A photolithography process can be used for pattern formation, and a desired pattern is formed by selectively exposing and developing the resist layer.
　第４の工程Ｓ４では、透明導電膜上の露出面にメッキ前処理を行う。メッキ前処理が行われる透明導電膜上の露出面は、前述したレジスト層のマスクパターンで被われていない面である。メッキ前処理は、基板を処理液に浸漬することによって行われる。従来から例えば配線基板等の銅配線等に使用しているメッキ前処理の処理液を透明導電膜に使用した場合、十分な前処理が行われず、良好なメッキ処理を行うことができない。そこで、本発明の発明者らは、ＰＨ１２以上の強アルカリ液を４５℃以上の環境下で透明導電膜に対する処理液として利用した場合に、十分なメッキ前処理を行うことができるという知見を得た。また、メッキ前処理における、処理液のＰＨと温度に比例して、透明導電膜に対するメッキの密度が上がる傾向があるという知見を得た。この際、メッキ前処理が行われてもレジスト層のマスクパターンが所望の領域を被っていることが必要になり、レジスト層のマスクパターンで被われている透明導電膜上の部分はメッキ前処理の未処理面となり、レジスト層のマスクパターンで被われていない透明電極上の部分にはメッキ前処理面が形成される。 In the fourth step S4, a plating pretreatment is performed on the exposed surface on the transparent conductive film. The exposed surface on the transparent conductive film on which the plating pretreatment is performed is a surface not covered with the mask pattern of the resist layer described above. The pre-plating process is performed by immersing the substrate in a processing solution. Conventionally, for example, when a plating pretreatment treatment solution used for copper wiring such as a wiring board is used for a transparent conductive film, sufficient pretreatment is not performed and good plating treatment cannot be performed. Therefore, the inventors of the present invention have obtained the knowledge that a sufficient pre-plating treatment can be performed when a strong alkaline solution having a pH of 12 or more is used as a treatment solution for a transparent conductive film in an environment of 45 ° C. or more. It was. Moreover, the knowledge that the density of the plating with respect to the transparent conductive film tends to increase in proportion to the pH and temperature of the treatment liquid in the pretreatment for plating was obtained. At this time, it is necessary that the mask pattern of the resist layer covers a desired region even if the plating pretreatment is performed, and the portion on the transparent conductive film covered with the mask pattern of the resist layer is subjected to the plating pretreatment. A pre-plating treatment surface is formed on a portion of the transparent electrode that is not covered with the mask pattern of the resist layer.
　第４の工程Ｓ４で行われるメッキ前処理は、透明導電膜とメッキ処理によって形成される金属膜との密着性を高めるための処理である。この前処理は、一例としては、透明導電膜上の脱脂処理、透明導電膜の表面を粗面化するための表面エッチング処理などである。この第４の工程Ｓ４においては、先に形成されたレジスト層が処理に曝されることになる。このレジスト層として適するポリイミド膜は、耐薬品性が高く、透明導電膜と金属膜との密着性を高めるための処理に対して十分な耐性を備えているので、レジスト層が溶解したり剥がれたりする不具合が生じない。なお、基板全体を処理液に浸漬することに限らず、少なくとも透明導電膜上の露出面を含む領域にメッキ前処理が行われれば良く、基板上のメッキ前処理が必要な領域に処理液を塗布する方法を用いても良い。 The pre-plating process performed in the fourth step S4 is a process for improving the adhesion between the transparent conductive film and the metal film formed by the plating process. For example, the pretreatment includes a degreasing process on the transparent conductive film, a surface etching process for roughening the surface of the transparent conductive film, and the like. In the fourth step S4, the previously formed resist layer is exposed to processing. The polyimide film suitable as the resist layer has high chemical resistance and has sufficient resistance to the treatment for improving the adhesion between the transparent conductive film and the metal film, so that the resist layer is dissolved or peeled off. Does not cause problems. In addition, it is not limited to immersing the entire substrate in the processing liquid, and it is sufficient that the plating pretreatment is performed at least on the area including the exposed surface on the transparent conductive film, and the processing liquid is applied to the area on the substrate where the plating pretreatment is necessary. A coating method may be used.
　第５の工程Ｓ５では、メッキ前処理が行われた透明導電膜上の露出面に例えばＰｄなどの触媒を付与した後、メッキ処理によって金属膜が成膜される。このメッキ処理によって、透明導電膜上の所望の部分に金属膜による補助電極が形成される。メッキ処理はメッキ前処理が行われた透明導電膜上に施されることで、透明導電膜と金属膜は高い密着性を有する状態で接合される。また、メッキ処理によって透明導電膜上に補助電極を形成することで、透明導電膜の電極パターンと補助電極の電極パターンをズレ無く形成することができる。この際のメッキ処理は、無電解メッキ処理、電解メッキ処理のいずれであってもよい。ここでの金属膜は、Ni、Au、Cu、Pdなどの単体又は複合体からなる。 In the fifth step S5, a catalyst such as Pd is applied to the exposed surface on the transparent conductive film that has been subjected to the pre-plating process, and then a metal film is formed by the plating process. By this plating process, an auxiliary electrode made of a metal film is formed at a desired portion on the transparent conductive film. The plating process is performed on the transparent conductive film that has been subjected to the pre-plating process, so that the transparent conductive film and the metal film are bonded together with high adhesion. Further, by forming the auxiliary electrode on the transparent conductive film by plating, the electrode pattern of the transparent conductive film and the electrode pattern of the auxiliary electrode can be formed without deviation. The plating process at this time may be either an electroless plating process or an electrolytic plating process. Here, the metal film is made of a simple substance such as Ni, Au, Cu, or Pd or a composite.
　その後は、必要に応じてレジスト層が基板から除去され（第６の工程Ｓ６）、更に、補助電極で被われていない透明導電膜上に各種電子デバイスの素子が形成される（第７の工程Ｓ７）。 Thereafter, the resist layer is removed from the substrate as necessary (sixth step S6), and further, elements of various electronic devices are formed on the transparent conductive film not covered with the auxiliary electrode (seventh step). S7).
　このような特徴を有する本発明の実施形態に係る電子デバイスの製造方法によると、先ず、メッキ処理によって透明導電膜上の必要な部分に補助電極を形成するので、電極パターンが形成された透明導電膜上に重ねて補助電極のパターンを形成する際に、パターンのズレが生じること無く補助電極を形成することができる。この際、露出された透明導電膜上にメッキ前処理を施すので、透明導電膜とメッキ処理によって形成される金属膜を高い密着性を有する状態で接合させることができる。また、透明導電膜上のメッキ処理を行わない部分は、メッキ前処理に対して耐性を有するレジスト層で被われているので、必要な部分のみにメッキ処理によって補助電極を形成することができると共に、素子形成がなされる透明導電膜上をメッキ前処理に対する未処理面にすることができる。 According to the method of manufacturing an electronic device according to the embodiment of the present invention having such characteristics, first, the auxiliary electrode is formed on a necessary portion on the transparent conductive film by plating, so that the transparent conductive material on which the electrode pattern is formed is formed. When the pattern of the auxiliary electrode is formed on the film, the auxiliary electrode can be formed without causing a pattern shift. At this time, since the pre-plating process is performed on the exposed transparent conductive film, the transparent conductive film and the metal film formed by the plating process can be bonded with high adhesion. In addition, since the portion of the transparent conductive film that is not subjected to the plating treatment is covered with a resist layer that is resistant to the pre-plating treatment, the auxiliary electrode can be formed only on the necessary portion by the plating treatment. The transparent conductive film on which the element is formed can be an untreated surface with respect to the pretreatment for plating.
　図２は、本発明の実施形態に係る電子デバイスの製造方法におけるレジスト層のマスクパターンの形成例を示した説明図である。この例では、前述した第３の工程Ｓ３において、基板１上に形成された透明導電膜の電極パターン２に対して、素子形成領域Ｌ１を被うようにレジスト層のマスクパターンＭ１を形成している。この例では、素子形成領域Ｌ１の外側に形成された引き出し配線領域Ｌ２内の電極パターン２（２Ａ）上に、前述した第４工程Ｓ４のメッキ前処理が施され、更に前述した第５工程Ｓ５のメッキ処理が施されて、補助電極が形成される。素子形成領域Ｌ１内の透明導電膜の電極パターン２（２Ｂ）は、メッキ前処理の未処理面を有し、引き出し配線領域Ｌ２内の電極パターン２（２Ａ）は補助電極の下にメッキ前処理面を有する。 FIG. 2 is an explanatory view showing an example of forming a mask pattern of a resist layer in the method for manufacturing an electronic device according to the embodiment of the present invention. In this example, a resist layer mask pattern M1 is formed on the transparent conductive film electrode pattern 2 formed on the substrate 1 so as to cover the element formation region L1 in the third step S3 described above. Yes. In this example, the plating pretreatment in the fourth step S4 described above is performed on the electrode pattern 2 (2A) in the lead-out wiring region L2 formed outside the element forming region L1, and further the fifth step S5 described above. The auxiliary electrode is formed by performing the plating process. The electrode pattern 2 (2B) of the transparent conductive film in the element formation region L1 has an untreated surface that has not been subjected to plating pretreatment, and the electrode pattern 2 (2A) in the lead-out wiring region L2 is pretreated under the auxiliary electrode. Has a surface.
　図３は、本発明の実施形態に係る電子デバイスの製造方法における補助電極の形成工程を示した説明図である。ここでは、図２における引き出し配線領域Ｌ２内に補助電極を形成する例を示している。図３（ａ）に示すように、基板１上の引き出し配線領域Ｌ２には透明導電膜の電極パターン２（２Ａ）が形成されている。前述した第３の工程Ｓ３で形成されるレジスト層のマスクパターンＭ１は引き出し配線領域Ｌ２には形成されないので、透明導電膜の電極パターン２（２Ａ）は上面及び側面が露出した状態になっている。 FIG. 3 is an explanatory view showing an auxiliary electrode forming step in the method of manufacturing an electronic device according to the embodiment of the present invention. Here, an example is shown in which auxiliary electrodes are formed in the lead-out wiring region L2 in FIG. As shown in FIG. 3A, an electrode pattern 2 (2A) of a transparent conductive film is formed in the lead-out wiring region L2 on the substrate 1. Since the mask pattern M1 of the resist layer formed in the third step S3 described above is not formed in the lead-out wiring region L2, the upper and side surfaces of the electrode pattern 2 (2A) of the transparent conductive film are exposed. .
　前述した第４の工程Ｓ４のメッキ前処理が行われると、図３（ｂ）に示すように、露出している透明導電膜の電極パターン２（２Ａ）の上面及び側面にメッキ前処理面２０が形成される。その後、前述した第５の工程Ｓ５のメッキ処理が行われると、図３（ｃ）に示すように、透明導電膜の電極パターン２（２Ａ）の上面及び側面を被うように金属膜が析出され、金属膜からなる補助電極３が形成される。この際の補助電極３は、透明導電膜の上面及び側面を被っており、側面から上面に至るＲ曲面３Ｒを有している。補助電極３の下の透明導電膜にはメッキ前処理面２Ａが形成されている。 When the plating pretreatment in the fourth step S4 described above is performed, as shown in FIG. 3B, the plating pretreatment surface 20 is formed on the upper and side surfaces of the electrode pattern 2 (2A) of the exposed transparent conductive film. Is formed. Thereafter, when the plating process of the fifth step S5 described above is performed, as shown in FIG. 3C, a metal film is deposited so as to cover the upper surface and the side surface of the electrode pattern 2 (2A) of the transparent conductive film. Then, the auxiliary electrode 3 made of a metal film is formed. The auxiliary electrode 3 at this time covers the upper surface and the side surface of the transparent conductive film, and has an R curved surface 3R extending from the side surface to the upper surface. A plating pretreatment surface 2A is formed on the transparent conductive film under the auxiliary electrode 3.
　図４は、本発明の実施形態に係る電子デバイスの製造方法におけるレジスト層のマスクパターンの他の形成例を示した説明図である。この例では、前述した第３の工程Ｓ３において、基板１上に形成された透明導電膜の電極パターン２に対して、補助電極が形成される部分を除く基板１上の全面を被うようにマスクパターンＭ２を形成している。ここでは、引き出し配線領域Ｌ２内の透明導電膜の電極パターン２（２Ａ）上に、前述した第４工程Ｓ４のメッキ前処理が施され、更に前述した第５工程Ｓ５のメッキ処理が施されて、補助電極が形成される。 FIG. 4 is an explanatory view showing another example of forming a resist layer mask pattern in the method for manufacturing an electronic device according to the embodiment of the present invention. In this example, in the above-described third step S3, the electrode pattern 2 of the transparent conductive film formed on the substrate 1 is covered with the entire surface on the substrate 1 except for the portion where the auxiliary electrode is formed. A mask pattern M2 is formed. Here, the plating pretreatment in the fourth step S4 described above is performed on the electrode pattern 2 (2A) of the transparent conductive film in the lead wiring region L2, and the plating treatment in the fifth step S5 described above is further performed. An auxiliary electrode is formed.
　この例では、素子形成領域Ｌ１だけでなく、引き出し配線領域Ｌ２内の配線（電極パターン２Ａ）間にもマスクパターンＭ２を形成しており、マスクパターンＭ２で被われた基板１の表面が全てメッキ前処理の未処理面になる。この例では基板１上の保護膜などがメッキ前処理によって損傷することや、基板１自体の表面がメッキ前処理によって削られることを抑制することができる。素子形成領域Ｌ１内の透明導電膜はメッキ前処理の未処理面を有する。 In this example, the mask pattern M2 is formed not only in the element formation region L1 but also between the wirings (electrode pattern 2A) in the lead-out wiring region L2, and the entire surface of the substrate 1 covered with the mask pattern M2 is plated. It becomes an unprocessed surface of pre-processing. In this example, the protective film on the substrate 1 can be prevented from being damaged by the pre-plating process, and the surface of the substrate 1 itself can be prevented from being scraped by the pre-plating process. The transparent conductive film in the element formation region L1 has an untreated surface that is pre-plated.
　図５は、本発明の実施形態に係る電子デバイスの製造方法における補助電極の形成工程を示した説明図である。ここでは、図４における引き出し配線領域Ｌ２内に補助電極を形成する例を示している。図５（ａ）に示すように、基板１上の引き出し配線領域Ｌ２には透明導電膜の電極パターン２（２Ａ）が形成されている。前述した第３の工程Ｓ３で形成されるレジスト層のマスクパターンＭ２は電極パターン２（２Ａ）の間に形成されており、電極パターン２（２Ａ）の透明導電膜は上面のみが露出した状態になっている。 FIG. 5 is an explanatory view showing an auxiliary electrode forming step in the method of manufacturing an electronic device according to the embodiment of the present invention. Here, an example is shown in which auxiliary electrodes are formed in the lead-out wiring region L2 in FIG. As shown in FIG. 5A, a transparent conductive film electrode pattern 2 (2 A) is formed in the lead-out wiring region L 2 on the substrate 1. The mask pattern M2 of the resist layer formed in the third step S3 described above is formed between the electrode patterns 2 (2A), and the transparent conductive film of the electrode pattern 2 (2A) is in a state where only the upper surface is exposed. It has become.
　前述した第４の工程Ｓ４のメッキ前処理が行われると、図５（ｂ）に示すように、露出している透明導電膜の電極パターン２（２Ａ）の上面にメッキ前処理面２０が形成される。その後、前述した第５の工程Ｓ５のメッキ処理が行われると、図５（ｃ）に示すように、透明導電膜の電極パターン２（２Ａ）の上面を被うように金属膜が析出され、金属膜からなる補助電極３が形成される。この際の補助電極３は、透明導電膜の上面を被っており、補助電極３の下の透明導電膜にはメッキ前処理面２０が形成されている。引き出し配線領域Ｌ２内のレジスト層は、素子形成領域内のレジスト層を除去する際に同時に除去される（図５（ｄ）参照）。 When the plating pretreatment in the fourth step S4 described above is performed, as shown in FIG. 5B, the plating pretreatment surface 20 is formed on the upper surface of the electrode pattern 2 (2A) of the exposed transparent conductive film. Is done. Thereafter, when the plating process of the fifth step S5 described above is performed, a metal film is deposited so as to cover the upper surface of the electrode pattern 2 (2A) of the transparent conductive film, as shown in FIG. An auxiliary electrode 3 made of a metal film is formed. At this time, the auxiliary electrode 3 covers the upper surface of the transparent conductive film, and the plating pretreatment surface 20 is formed on the transparent conductive film under the auxiliary electrode 3. The resist layer in the lead-out wiring region L2 is removed simultaneously with the removal of the resist layer in the element formation region (see FIG. 5D).
　図６は、本発明の実施形態に係る電子デバイスの製造方法における補助電極の形成工程を示した説明図である。ここでは、前述した素子形成領域Ｌ１内に有機ＥＬ素子を形成する例を示している。素子形成領域Ｌ１内においては、透明導電膜の電極パターン２（２Ｂ）はメッキ前処理の未処理面２０Ｓを有している。この未処理面２０Ｓを有する電極パターン２（２Ｂ）を下部電極１１として、下部電極１１上に有機層１２と上部電極１３を積層することで有機ＥＬ素子１０が形成される。 FIG. 6 is an explanatory view showing an auxiliary electrode forming step in the method for manufacturing an electronic device according to the embodiment of the present invention. Here, an example in which an organic EL element is formed in the element formation region L1 described above is shown. In the element formation region L1, the electrode pattern 2 (2B) of the transparent conductive film has an unprocessed surface 20S that is pre-plated. The organic EL element 10 is formed by stacking the organic layer 12 and the upper electrode 13 on the lower electrode 11 using the electrode pattern 2 (2B) having the untreated surface 20S as the lower electrode 11.
　この有機ＥＬ素子１０を形成するには、前述したレジスト層を基板１から除去した後、透明導電膜の電極パターン２（２Ｂ）の光透過性を要する部分の上に発光領域Ｌａを開口するように、基板１上に絶縁膜１４を形成する（図６（ａ））。この絶縁膜１４は、例えば、前述したレジスト層と同一材料で形成することができる。具体的には、ポリイミド膜のレジスト層を再度基板１上に塗布して、選択的に露光・現像することで、発光領域Ｌａを開口した絶縁膜１４を形成することができる。発光領域Ｌａ上に有機層１２を成膜し（図６（ｂ））、更に有機層１２上に金属電極層からなる上部電極１３を成膜することで（図６（ｃ））、有機ＥＬ素子１０を形成することができる。 In order to form the organic EL element 10, after removing the resist layer from the substrate 1, the light emitting region La is opened on the portion of the transparent conductive film that requires light transmission of the electrode pattern 2 (2 B). Then, an insulating film 14 is formed on the substrate 1 (FIG. 6A). For example, the insulating film 14 can be formed of the same material as the resist layer described above. Specifically, the insulating film 14 having the light emitting region La opened can be formed by applying a resist layer of a polyimide film on the substrate 1 again, and selectively exposing and developing. An organic layer 12 is formed on the light emitting region La (FIG. 6B), and further, an upper electrode 13 made of a metal electrode layer is formed on the organic layer 12 (FIG. 6C). The element 10 can be formed.
　図７は、本発明の実施形態に係る電子デバイスの製造方法の他の形態例を示している。図７（ａ）は、第３の工程Ｓ３におけるレジスト層のマスクパターンＭ３の形態例を示している。このマスクパターンＭ３は、素子形成領域Ｌ１内の電極パターン２（２Ｂ）に沿ってそれぞれ形成されており、電極パターン２（２Ｂ）のバス電極に対応する部分を露出している。図７（ｂ）は、第５の工程Ｓ５で形成される補助電極のパターンを示している。図７（ａ）に示すマスクパターンＭ３を形成した状態で、第４の工程Ｓ４のメッキ前処理と第５の工程Ｓ５のメッキ処理を行うと、引き出し配線領域Ｌ２内の電極パターン２（２Ａ）上に引き出し配線となる補助電極３（３Ａ）を形成し、更に素子形成領域Ｌ１内の電極パターン２（２Ｂ）上に、前述した下部電極１１に沿って延設されるバス電極となる補助電極３（３Ｂ）を形成することができる。 FIG. 7 shows another example of the electronic device manufacturing method according to the embodiment of the present invention. FIG. 7A shows an example of the mask pattern M3 of the resist layer in the third step S3. The mask pattern M3 is formed along the electrode pattern 2 (2B) in the element formation region L1, and the portion corresponding to the bus electrode of the electrode pattern 2 (2B) is exposed. FIG. 7B shows an auxiliary electrode pattern formed in the fifth step S5. When the pre-plating process in the fourth step S4 and the plating process in the fifth step S5 are performed in a state where the mask pattern M3 shown in FIG. 7A is formed, the electrode pattern 2 (2A) in the lead-out wiring region L2 is obtained. An auxiliary electrode 3 (3A) serving as a lead-out wiring is formed thereon, and an auxiliary electrode serving as a bus electrode extending along the lower electrode 11 described above on the electrode pattern 2 (2B) in the element formation region L1. 3 (3B) can be formed.
　図８は、前述した製造方法によって製造される電子デバイスの構成例（有機ＥＬ素子の構成例）を示した説明図である。有機ＥＬ素子１０を備えた電子デバイスは、基板１と、基板１上に形成され、所定の電極パターン２（２Ｂ）にパターニングされた透明導電膜（下部電極１１）と、透明導電膜上の一部に形成され、メッキ処理によって形成された金属膜からなる補助電極３（３B）とを備えている。透明導電膜（下部電極１１）は、補助電極３（３B）の下にメッキ前処理面２０が形成され、補助電極３（３B）が形成されていない面にメッキ前処理の未処理面２０Ｓを有する。そして、透明導電膜（下部電極１１）のメッキ前処理の未処理面２０Ｓ上は、絶縁膜１４によって発光領域Ｌａが区画されており、その発光領域Ｌａ上に有機層１２、上部電極１３が積層されている。 FIG. 8 is an explanatory diagram showing a configuration example (configuration example of an organic EL element) of an electronic device manufactured by the manufacturing method described above. An electronic device including the organic EL element 10 includes a substrate 1, a transparent conductive film (lower electrode 11) formed on the substrate 1 and patterned into a predetermined electrode pattern 2 (2B), and a transparent conductive film. And an auxiliary electrode 3 (3B) made of a metal film formed by plating. In the transparent conductive film (lower electrode 11), a pre-plating surface 20 is formed under the auxiliary electrode 3 (3B), and an untreated surface 20S that is not pre-plated is formed on the surface where the auxiliary electrode 3 (3B) is not formed. Have. A light emitting region La is defined on the untreated surface 20S of the transparent conductive film (lower electrode 11) before plating by an insulating film 14, and an organic layer 12 and an upper electrode 13 are stacked on the light emitting region La. Has been.
　このような電子デバイスの製造方法及び電子デバイスは、透明導電膜の上にメッキ前処理を施して、メッキ前処理面上にメッキ処理による金属膜を析出させて補助電極を形成するので、透明導電膜と補助電極の密着性を高めることができる。また、メッキ前処理に対する耐性を有するポリイミド膜をレジスト層として用いて、メッキ前処理及びメッキ処理を行わない光透過性を要する部分を被うマスクパターンを形成しているので、透明導電膜上の光透過性を要する部分をメッキ前処理から確実に保護することができる。また、透明導電膜上におけるメッキ前処理の未処理面上に有機ＥＬ素子を構成する有機層を積層するので、メッキ前処理による透明導電膜表面の凹凸に起因する有機ＥＬ素子の上下電極間短絡などの不具合が発生することが無く、良好な発光特性を得ることができる。 In such an electronic device manufacturing method and electronic device, a pre-plating treatment is performed on a transparent conductive film, and a metal film is deposited on the pre-plating treatment surface to form an auxiliary electrode. The adhesion between the membrane and the auxiliary electrode can be improved. In addition, a polyimide film having resistance to pretreatment for plating is used as a resist layer, and a mask pattern is formed so as to cover a portion requiring light permeability without performing pretreatment for plating and plating treatment. It is possible to reliably protect the portion requiring light transmittance from the pretreatment for plating. Moreover, since the organic layer which comprises an organic EL element is laminated | stacked on the unprocessed surface of the pre-plating process on a transparent conductive film, the short circuit between the upper and lower electrodes of the organic EL element resulting from the unevenness | corrugation of the transparent conductive film surface by a pre-plating process Therefore, good light emission characteristics can be obtained.

Claims (15)

  1. 　透明電極を有する電子デバイスの製造方法であって、
    　前記透明電極を含む電極パターンにパターニングされた透明導電膜を有する基板上に、レジスト層を選択的に形成して、前記透明導電膜上の光透過性を要する部分を被い且つ前記透明導電膜上の補助電極を形成する部分を露出させたマスクパターンを形成する工程と、
    　前記透明導電膜上の露出面にメッキ処理によって金属膜による補助電極を形成する工程を有することを特徴とする電子デバイスの製造方法。     A method of manufacturing an electronic device having a transparent electrode,
    A resist layer is selectively formed on a substrate having a transparent conductive film patterned into an electrode pattern including the transparent electrode, covering a portion requiring light transmittance on the transparent conductive film, and the transparent conductive film Forming a mask pattern in which a portion for forming the auxiliary electrode is exposed;
    A method of manufacturing an electronic device, comprising: forming an auxiliary electrode made of a metal film on an exposed surface of the transparent conductive film by plating.
  2. 　前記マスクパターン形成後に、前記透明導電膜上の露出面に、
    脱脂処理及び表面エッチング処理によるメッキ前処理を行う工程を有し、
    前記レジスト層は、前記メッキ前処理に対する耐性を有することを特徴とする請求項１に記載された電子デバイスの製造方法。     After forming the mask pattern, on the exposed surface on the transparent conductive film,
    Having a step of performing pre-plating treatment by degreasing treatment and surface etching treatment,
    The method for manufacturing an electronic device according to claim 1, wherein the resist layer has resistance to the plating pretreatment.
  3. 　前記レジスト層は、ポリイミド膜であることを特徴とする請求項２に記載された電子デバイスの製造方法。 3. The method of manufacturing an electronic device according to claim 2, wherein the resist layer is a polyimide film.
  4. 　前記マスクパターンは、前記補助電極を形成する部分を除く前記基板上の全面を被うように形成されることを特徴とする請求項３に記載された電子デバイスの製造方法。 4. The method of manufacturing an electronic device according to claim 3, wherein the mask pattern is formed so as to cover the entire surface of the substrate excluding a portion where the auxiliary electrode is formed.
  5. 　前記メッキ前処理は、前記基板をＰＨ１２以上のアルカリ液に浸漬することによって行われることを特徴とする請求項４に記載された電子デバイスの製造方法。 5. The method of manufacturing an electronic device according to claim 4, wherein the pretreatment for plating is performed by immersing the substrate in an alkaline solution having a pH of 12 or more.
  6. 　前記金属膜は前記透明導電膜の上面に形成されることを特徴とする請求項５に記載された電子デバイスの製造方法。 6. The method of manufacturing an electronic device according to claim 5, wherein the metal film is formed on an upper surface of the transparent conductive film.
  7. 　前記金属膜は前記透明導電膜の側面に形成されることを特徴とする請求項２に記載された電子デバイスの製造方法。 3. The method of manufacturing an electronic device according to claim 2, wherein the metal film is formed on a side surface of the transparent conductive film.
  8. 　前記レジスト層を前記基板から除去する工程と、
    　前記透明導電膜上の光透過性を要する部分の上に発光領域を開口するように、前記基板上に絶縁膜を形成する工程を有し、
    　前記絶縁膜を前記レジスト層と同一材料で形成することを特徴とする請求項２に記載された電子デバイスの製造方法。     Removing the resist layer from the substrate;
    A step of forming an insulating film on the substrate so as to open a light emitting region on a portion of the transparent conductive film that requires light transmission;
    The method for manufacturing an electronic device according to claim 2, wherein the insulating film is formed of the same material as the resist layer.
  9. 　前記発光領域上に有機層を成膜し、当該有機層上に金属電極層を成膜することを特徴とする請求項８に記載された電子デバイスの製造方法。 9. The method of manufacturing an electronic device according to claim 8, wherein an organic layer is formed on the light emitting region, and a metal electrode layer is formed on the organic layer.
  10. 　基板と、前記基板上に形成され、所定の電極パターンにパターニングされた透明導電膜と、前記透明導電膜上の一部に形成され、メッキ処理によって形成された金属膜からなる補助電極とを備え、
    　前記透明導電膜は、前記補助電極の下にメッキ前処理面が形成され、前記補助電極が形成されていない面にメッキ前処理の未処理面を有することを特徴とする電子デバイス。     A substrate, a transparent conductive film formed on the substrate and patterned into a predetermined electrode pattern, and an auxiliary electrode made of a metal film formed on a part of the transparent conductive film and formed by plating. ,
    2. The electronic device according to claim 1, wherein the transparent conductive film has a pre-plating surface formed under the auxiliary electrode and a non-plating surface that is not pre-plated on the surface where the auxiliary electrode is not formed.
  11. 　前記補助電極は、当該補助電極の側面から上面に至るＲ曲面を有することを特徴とする請求項１０記載の電子デバイス。 11. The electronic device according to claim 10, wherein the auxiliary electrode has an R curved surface extending from a side surface to an upper surface of the auxiliary electrode.
  12. 　前記補助電極は、前記透明導電膜の側面を被っていることを特徴とする請求項１１記載の電子デバイス。 12. The electronic device according to claim 11, wherein the auxiliary electrode covers a side surface of the transparent conductive film.
  13. 　前記透明導電膜におけるメッキ前処理の未処理面を下部電極とし、
    　当該下部電極上に有機層と上部電極を積層した有機ＥＬ素子を備えることを特徴とする請求項１０に記載の電子デバイス。     The untreated surface of the pre-plating treatment in the transparent conductive film is a lower electrode,
    The electronic device according to claim 10, comprising an organic EL element in which an organic layer and an upper electrode are stacked on the lower electrode.
  14. 　前記補助電極は、前記有機ＥＬ素子が形成される素子形成領域の外に形成される配線電極を構成することを特徴とする請求項１３に記載の電子デバイス。 The electronic device according to claim 13, wherein the auxiliary electrode constitutes a wiring electrode formed outside an element formation region in which the organic EL element is formed.
  15. 　前記補助電極は、前記有機ＥＬ素子が形成される素子形成領域内に形成されるバス電極を構成することを特徴とする請求項１３に記載の電子デバイス。 The electronic device according to claim 13, wherein the auxiliary electrode constitutes a bus electrode formed in an element formation region in which the organic EL element is formed.
PCT/JP2012/053858 2012-02-17 2012-02-17 Method for manufacturing electronic device and electronic device WO2013121585A1 (en)

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