WO2013118076A1 - Dispositif électroluminescent encapsulé de coût réduit - Google Patents

Dispositif électroluminescent encapsulé de coût réduit Download PDF

Info

Publication number
WO2013118076A1
WO2013118076A1 PCT/IB2013/051020 IB2013051020W WO2013118076A1 WO 2013118076 A1 WO2013118076 A1 WO 2013118076A1 IB 2013051020 W IB2013051020 W IB 2013051020W WO 2013118076 A1 WO2013118076 A1 WO 2013118076A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting
emitting elements
reflective
encapsulant
Prior art date
Application number
PCT/IB2013/051020
Other languages
English (en)
Inventor
Serge Joel Armand BIERHUIZEN
Original Assignee
Koninklijke Philips N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips N.V. filed Critical Koninklijke Philips N.V.
Publication of WO2013118076A1 publication Critical patent/WO2013118076A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the present disclosure relates to the field of light-emitting devices, and in particular to a light-emitting device with one or more light-emitting elements encapsulated in a reflective cup.
  • LEDs Solid state light-emitting devices
  • light-emitting devices often include reflective elements that serve to reflect stray light in the intended direction.
  • Figs. 1A and IB illustrate example light-emitting devices with reflective elements.
  • the light-emitting element 110 is placed in a reflective cup 120, which often also serves as a contact for coupling the element to an external power source.
  • the element 110 will typically include a sandwich configuration of light emitting material between two electrodes, a lower electrode being connected to the contact 130A via the reflective cup 120, and an upper electrode being wire bonded to the other contact 130B.
  • the light-emitting element 110, the reflective cup 120, and the electrodes 130A, 130B are subsequently encapsulated in an encapsulation material 170, such as an epoxy that is molded in the shape of a lens.
  • the light-emitting element 110 is mounted on a substrate 160, and the area surrounding the element 110 is coated with a reflective layer 125, such as a white dielectric.
  • a reflective layer 125 such as a white dielectric.
  • circuit traces 140 (shown in phantom) are coupled to the element 110, and through-hole vias 145A, 145B (shown in phantom) couple the traces 140 to electrodes 135A, 135B at the lower surface of the substrate 160.
  • the light-emitting device can be mounted directly upon a printed circuit board or other mounting surface.
  • the example device of Fig. 1A advantageously includes a reflective cup that is shaped to direct the light output in a concentrated beam, but the manufacturing process requires support of the cup 120 while the light-emitting element 110 is mounted and wire bonded, and subsequently encapsulated.
  • the manufacture of example device of Fig. IB may be simpler than the manufacture of the device of Fig. 1 A, but the encapsulant 150 generally needs to be substantially large and curved for high extraction efficiency and the reflective surface 125 does not direct the light as well as the reflective cup 120.
  • advantages may be realized by a manufacturing process that includes mounting light-emitting elements on a film and disposing reflective cups around the light-emitting elements on the film.
  • the reflective cups are filled with encapsulants, affixing the light-emitting elements to the reflective cups.
  • the film may then be removed, exposing bottom contacts on the light-emitting elements.
  • the encapsulated light-emitting elements within the reflective cups are then singulated to provide the individual light-emitting devices.
  • the encapsulants may be molded or otherwise shaped to provide a desired optical function.
  • the light-emitting elements are arranged in groups that each includes light-emitting elements of different colors.
  • a reflective cup is disposed around each group.
  • wavelength converting elements are disposed over the encapsulants so each individual light-emitting device outputs white light.
  • Figs. 1A and IB illustrate example prior art light-emitting devices
  • Figs. 2A, 2B, 2C, and 2D illustrate an example manufacture of light-emitting devices having integral reflective structures
  • Figs. 3 A, 3B, and 3C illustrate example alternative features of light-emitting devices having integral reflective structures
  • . 4 illustrates an example flow diagram for providing light-emitting devices having integral reflective structures
  • Figs. 5A and 5B illustrate example structures for light-emitting devices with multiple light-emitting elements
  • Fig. 6 illustrates an example flow diagram for providing light-emitting devices having integral reflective structures
  • Figs. 7, 8, 9, 10, 11, 12, 13, 14, 15, and 16 illustrate an example manufacture of light-emitting devices
  • Fig. 17 illustrates an example light-emitting device attached to a waveguide, all arranged in accordance with embodiments of the invention.
  • Figs. 2 A to 2D illustrate an example steps to manufacture light-emitting devices with an integral reflective structure.
  • Fig. 2A illustrates the placement of multiple light-emitting elements 110 on a film 210.
  • the light-emitting elements 110 are structured to each have contacts 23 OA and 23 OB on their lower surface, to facilitate coupling to an external power source upon removal of the film 210.
  • the elements 110 may be placed on the film 210 using a conventional pick and place process.
  • a block of elements 110 may be placed on an elastic film that is subsequently stretched to separate the elements 110 to situate the elements 110 appropriately.
  • film is used herein in a general sense to distinguish it from a "substrate” in that the film is not necessarily required to provide structural support per se.
  • a flexible film is particularly well suited for this process, due to its lower cost compared to a rigid film, but a rigid film may be well suited for repeated use of the film.
  • light-emitting elements 110 may be mounted on individual leadframes. The leadframes may be placed on film 210 for subsequent processing.
  • reflective structures 250 are situated on the film 210, surrounding each light-emitting element 110.
  • a top view of an example frame of light- emitting devices is illustrated in Fig. 2C.
  • the structure 250 includes a set of planes or sidewalls that are angled with respect to the corresponding light-emitting element 110.
  • the sidewalls may be oriented vertically or they may be curved in any suitable manner. The sidewalls serve to efficiently reflect, scatter, or otherwise manipulate the light to extract additional light forward from the light-emitting element 110.
  • the structure 250 may be added to the film 210 in a number of ways.
  • a preformed frame of reflective material, with openings for the light-emitting elements 110, may simply be placed upon the film 210.
  • the structure 250 may be molded directly upon the film 210 or injection molded with leadframes using a mold that is patterned to avoid placing the reflective material at the locations of the elements 110.
  • a slurry of white dielectric material, for example, may be injection molded upon the film 210 or the leadframes using techniques common in the art of semiconductor fabrication.
  • a reflective coating may be applied atop a shaped structure to form the reflective structure 250.
  • individual reflective structures 250 may be placed on the film 210 using a conventional pick and place process.
  • Other techniques for placing or forming reflective structures that surround the light-emitting elements 110 on the film will be evident to one of ordinary skill in the art in view of this disclosure.
  • the reflective structures 250 are placed on the film 210 prior to the placement of light-emitting elements 110 while in other embodiments the light-emitting elements 110 are placed on the film 210 prior to the placement of the reflective structures 250.
  • an encapsulant 270 is applied, filling the reflective structures 250 and affixing the light-emitting elements 110 to these reflective structures 250, as illustrated in FIG. 2D.
  • the film 210 may be removed, exposing the contacts 23 OA and 230B for coupling to an external power source.
  • a lower layer of the reflective structure 250 may comprise an easily removable material, so that upon removal, the contacts 230A and 230B will extend slightly below the remaining surface of the structure 250.
  • Such a sacrificial removable layer applied to the reflective structure and/or the bottom contacts of the LED chip may also be used to remove any excess material from the film 210 after removal of the light-emitting elements 110 and the reflective structures 250.
  • the upper surface of the encapsulant may be fiat.
  • the light-emitting device is coupled to a rectilinear waveguide or other structure having a relatively flat light input surface.
  • edge lit waveguides are increasingly being used to provide backlighting to displays, and surface lit waveguides are increasingly being used to provide high intensity edge-emitting lamps.
  • the light coupling efficiency into the waveguide is increased.
  • the size and shape of the output surface of light-emitting device may be customized to conform to the transmitting element, substantially independent of the size and shape of the light-emitting element.
  • Fig. 3A illustrates a reflective surface 350 that is curved, as compared to the planar surface 250 of Fig. 2A.
  • Fig. 3B illustrates a structure 360 that is circular, viewed from the top.
  • the encapsulant may also be formed in a variety of shapes to achieve a desired optical effect.
  • the encapsulant may be domed, similar to the domed shape of the encapsulant 170 in Fig. 1 that serves to spread the light output across a wide output angle.
  • Fig. 3C illustrates a more complex shape 370 that serves to extract light in combination with the reflector and provides a directed light output.
  • Fig. 4 illustrates an example flow diagram to facilitate the manufacture of a light- emitting device with integral reflective structure.
  • the light-emitting elements are placed on a film, and at 420, reflective structures, with apertures for the light-emitting elements are placed or formed on the film.
  • the light-emitting elements may also be mounted on leadframes, which may be placed on the film.
  • the structures may be provided or formed on the film, and light-emitting elements may be placed within apertures provided for receiving the light- emitting elements.
  • the placement of the structures on the film may be effected by applying the film to a lower surface of a frame of reflective structures.
  • the aperture can provide the reference datum for placing each light-emitting element, thereby facilitating an accurate placement of each light-emitting element in a conventional pick-and-place process.
  • an encapsulant is placed within the reflective structures, at 430.
  • the encapsulant will fill the reflective structures, but the desired light output characteristics may call for a partial fill of the reflective structures.
  • the encapsulant may be molded to a desired shape, again dependent upon the desired light output
  • a wavelength converter such as a phosphor in a binder
  • a wavelength converter may be added as a discrete element that is situated atop the light-emitting element or atop the encapsulant, or layered/sandwiched by the encapsulant, or the phosphor may be embedded within the encapsulant.
  • the film may include conductive traces that serve to provide connections to the light-emitting elements, and in such an embodiment, the film would not be removed. It may then be affixed to a metal strip that serves as a heat sink. Light-emitting elements can be soldered, attached using silver paste to the traces on the film, or electrically connected using microsprings or microbumps.
  • the plurality of reflective structures and light-emitting elements are separated, or "singulated,” into individual light-emitting devices. This singulation will depend upon the nature of the reflective structures. If, at 420, the structures are placed individually upon the film, or formed on the film as individual structures, the removal of the film at 450 will effect this singulation. Alternatively, if a frame of structures is formed or placed on the film, this singulation is effected by appropriately slicing/dicing the frame. One of ordinary skill in the art will recognize that this slicing/dicing of the frame can be facilitated by forming separation features on the frame, such as score lines or grooves.
  • the material used as the reflective structure is suitable to exposure to the intended operational environment for the singulated light-emitting devices, there are no further processes required to further "package" the device.
  • the example embodiments illustrate a frame of structures that is designed to minimize the space between the reflective structures, one of ordinary skill in the art will recognize that the shape of the structures may be made to conform to a desired overall package shape of the singulated light-emitting devices. That is, the size and shape of the cavity of each reflective structure in which the light-emitting element may be based on the desired light output characteristics, while the exterior size and shape of each reflective surface may be based on the desired package characteristics.
  • Fig. 5A illustrates, for example, a "light bar" embodiment wherein a rectangular reflective structure 530 encloses a plurality of light-emitting elements 110.
  • Fig. 5B illustrates a circular reflective structure 535 that encloses a plurality of light-emitting elements 110.
  • the bottom side of the reflective material may be patterned for ease of solderability, with features that facilitate self-alignment.
  • the plurality of light-emitting elements 110 may be situated on a common substrate with contacts that are commonly coupled to multiple elements 110.
  • each element 110 may be situated directly on the film to facilitate independent coupling to an external power source.
  • Other methods of accommodating multiple light-emitting elements within a reflective structure will be evident to one of ordinary skill in the art in view of this disclosure.
  • Fig. 6 illustrates an example flow diagram of a method 600 to facilitate the manufacture of a light-emitting device with integral reflective structures in one or more embodiments of the present disclosure.
  • Method 600 may include one or more operations, functions, or actions as illustrated by one or more blocks. Although the blocks are illustrated in a sequential order, these blocks may also be performed in parallel, and/or in a different order than those described herein. Also, the various blocks may be combined into fewer blocks, divided into additional blocks, and/or eliminated based upon the desired
  • Method 600 is explained with the help of Figs. 7 to 16 showing progression in the construction of devices by through method 600.
  • Method 600 may begin in a block 602.
  • groups 702A-H of light-emitting elements are placed on a film 704.
  • the light-emitting elements may also be mounted on leadframes (not shown), which may be placed on the film 704.
  • the light-emitting elements may be a combination of two or more types of indium gallium nitride (InGaN) light-emitting diodes that emit blue light, InGaN light-emitting diodes that emit green light, aluminum indium gallium phosphide (AlInGaP) light-emitting diodes that emit red light, and phosphor-based InGaN light-emitting diodes that emit magenta light (blue light and red phosphor).
  • the light-emitting diodes may be fabricated on sapphire substrates that are patterned for light extraction so the patterned sapphire substrates are not removed but remains with the elements at the end of the light- emitting element fabrication process.
  • each group 702 (e.g., group 702A) includes one or more light-emitting elements 706A, 706B that emit blue light, and one or more light-emitting elements 708A, 708B that emit green, red, or magenta light.
  • the block 602 may be followed by an optional block 604.
  • Each group 702 may have the same configuration of light-emitting elements or distinctly different configurations of light- emitting elements.
  • a wavelength converter 902 (shown in phantom) that generates light of a third color may be disposed atop the light-emitting elements 706A, 706B and 708A, 708B.
  • the wavelength converter 902 may be one or more types of phosphor in a binder or a ceramic phosphor plate that emits red or green light.
  • the optional block 604 may be followed by an optional block 606.
  • the wavelength converter 902 may be molded to form non- planar emitting surfaces depending on the desired light output characteristics.
  • the optional block 606 may be followed by a block 608.
  • the optional blocks 604 and 606 may precede the block 602, which may then be followed by the block 608.
  • the reflective cups 1002A-H are placed or formed on the film 704.
  • the reflective cups 1002A-H may be individually placed or formed, or collectively placed or formed.
  • Each reflective cup 1002 defines a first aperture on the surface of the reflective cup that is placed on the film 704 (e.g., a bottom aperture on a bottom surface).
  • the first aperture preferably fits closely around a corresponding group 702 of light-emitting elements on the film 704.
  • Each reflective cup 1002 further includes reflective sidewalls that extend from the first aperture to a second aperture on the outward facing surface of the reflective cup (e.g., an exit window on a top surface) opposite the surface placed on the film 704.
  • the reflective cups 1002A-H are shown with four angled sidewalls, the reflective cups 1002A-H may be formed with other reflective surfaces depending on the desired light output characteristics. Furthermore, the order of the placement and/or formation of the light-emitting elements 706A, 706B, 708 A, 708B and the reflective cups 1002A-H may be reversed, in that the reflective cups 1002A-H may be provided or formed on the film 704, and the light-emitting elements 706A, 706B, 708A, 708B may be placed within the bottom apertures or soldered on leads provided for receiving the light-emitting elements 706A, 706B, 708A, 708B.
  • the block 608 may be followed by a block 610.
  • an encapsulant 1202 is placed within the reflective cups 1002A-H (only the reflective cups 1002A-D are visible). Generally, the encapsulant 1202 fills the reflective cups 1002A-H, but the desired light output
  • the block 610 may be followed by a block 612.
  • the encapsulant 1202 may be molded to form non-planar emitting surfaces 1204A-H (only the emitting surfaces 1204A-D are visible in phantom), over corresponding groups 702A-H of light-emitting elements (only the groups 702A-D are visible), depending on the desired light output characteristics.
  • the block 612 may be followed by a block 614.
  • a wavelength converter 1402 is disposed atop the encapsulant 1202.
  • the wavelength converter 1402 may be one or more types of phosphor in a binder or a ceramic phosphor plate that emits red or green light.
  • the colors emitted by the light-emitting elements 706, 708 and the wavelength converter 1402 combine to generate white light.
  • the encapsulant 1202 may partially fill the reflective cups
  • Fig. 15 illustrates the wavelength converter 1402 disposed over the encapsulant 1202 that partially fills the reflective cups 1002A-H (only the reflective cups 1002A-D are visible).
  • the wavelength converter 1402 conforms to the contour of the encapsulant 1202 over the reflective cups 1002A-H. This leaves gaps 1502 between the wavelength converter 1402 and the second apertures (the exit windows) of the reflective cups 1002A-H.
  • a gap 1502 allows a light-emitting device 1702 singulated from the structure in Fig. 15 to have good coupling efficiency into a waveguide 1704 with a flat light input surface 1706. Specifically, the light refracts towards normal when it enters the waveguide 1704 so the light stays within waveguide.
  • the block 614 may be followed by an optional block 616.
  • the wavelength converter 1402 may be molded to form non-planar emitting surfaces 1404A-H (only the non-planar emitting surfaces 1404A-D are visible in phantom), over corresponding groups 702A-H of light- emitting elements, depending on the desired light output characteristics.
  • the optional block 616 may be followed by a block 618.
  • the film 704 may be removed, typically to expose the bottom contacts on the light-emitting elements 706 and 708 or the leadframes.
  • the film may include conductive traces that serve to provide connections to the light-emitting elements 706, 708, and in such an embodiment, the film would not be removed.
  • the block 618 may be followed by a block 620.
  • the reflective cups 1002A-H and the groups 702A-H of light-emitting elements are singulated into individual light-emitting devices 1602A-H. As described above, this singulation will depend upon the nature of the reflective structures. If the reflective cups 1002A-H are placed individually upon the film 704, or formed on the film 704 as individual structures, the removal of the film 704 at the block 618 will effect this singulation. Alternatively, if a frame of reflective cups 1002A-H is formed or placed on the film 704, this singulation is effected by appropriately slicing/dicing the frame along streets 1604 (shown in phantom).
  • Some embodiments of the light-emitting device 1702 may generate white light without the use of green-emitting phosphor. Green-emitting phosphor is not preferred for some applications such as LCD backlighting as it tends to leak light into the red range and therefore degrades the color of the LCD display. Instead, these embodiments of the light- emitting device 1702 use blue and green-emitting InGaN light-emitting diodes 706, 708 and red-emitting phosphor in the wavelength converter 1402 to generate white light.
  • the reflective structures in the example embodiments include a larger light output area than the light input area, one of ordinary skill in the art will recognize that the size and shape of the reflective structures will generally depend upon the desired light output characteristics from the particular light- emitting elements, and may take any of a variety of forms.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

Cette invention concerne un procédé de fabrication d'un dispositif électroluminescent, comprenant les étapes consistant à : disposer des élément électroluminescents sur un film et les entourer par des coupelles réfléchissantes disposées sur le film ou formées sur celui-ci ; remplir lesdites coupelles réfléchissantes de matériau d'encapsulation de façon à fixer les élément électroluminescents aux coupelles réfléchissantes. Par la suite, le film peut être éliminé, de façon à exposer les contacts inférieurs des éléments électroluminescents. Les éléments électroluminescents encapsulés dans les coupelles réfléchissantes sont par la suite séparés un à un pour former des dispositifs électroluminescents individuels. Les matériaux d'encapsulation peuvent être moulés ou autrement façonnés pour assurer une caractéristique optique voulue.
PCT/IB2013/051020 2012-02-10 2013-02-07 Dispositif électroluminescent encapsulé de coût réduit WO2013118076A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261597353P 2012-02-10 2012-02-10
US61/597,353 2012-02-10

Publications (1)

Publication Number Publication Date
WO2013118076A1 true WO2013118076A1 (fr) 2013-08-15

Family

ID=48048080

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2013/051020 WO2013118076A1 (fr) 2012-02-10 2013-02-07 Dispositif électroluminescent encapsulé de coût réduit

Country Status (1)

Country Link
WO (1) WO2013118076A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015119858A1 (fr) * 2014-02-05 2015-08-13 Cooledge Lighting Inc. Puces électroluminescentes contenant des matériaux de conversion de longueurs d'ondes et procédés y relatifs
JP2016538723A (ja) * 2013-11-13 2016-12-08 ナノコ テクノロジーズ リミテッド 量子ドット蛍光体を含むｌｅｄキャップ
EP3174109A1 (fr) * 2015-11-30 2017-05-31 Nichia Corporation Procédé de fabrication de dispositif électroluminescent
WO2018233870A1 (fr) * 2017-06-22 2018-12-27 Osram Opto Semiconductors Gmbh Composant optoélectronique
CN113078179A (zh) * 2020-01-06 2021-07-06 群创光电股份有限公司 电子装置
CN113658943A (zh) * 2013-12-13 2021-11-16 晶元光电股份有限公司 发光装置及其制作方法
US11654207B2 (en) 2017-12-11 2023-05-23 W. L. Gore & Associates, Inc. Methods for producing flexible ultraviolet light generation sheets and systems

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2161765A2 (fr) * 2008-09-09 2010-03-10 Nichia Corporation Dispositif semi-conducteur optique et son procédé de fabrication
US20100096746A1 (en) * 2008-10-21 2010-04-22 Advanced Optoelectronic Technology Inc. Package module structure of compound semiconductor devices and fabricating method thereof
US20110220920A1 (en) * 2010-03-09 2011-09-15 Brian Thomas Collins Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices
US20110316006A1 (en) * 2010-02-11 2011-12-29 Tao Xu Surface-Textured Encapsulations for use with Light Emitting Diodes
WO2012101488A1 (fr) * 2011-01-17 2012-08-02 Koninklijke Philips Electronics N.V. Boîtier de del comprenant une encapsulation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2161765A2 (fr) * 2008-09-09 2010-03-10 Nichia Corporation Dispositif semi-conducteur optique et son procédé de fabrication
US20100096746A1 (en) * 2008-10-21 2010-04-22 Advanced Optoelectronic Technology Inc. Package module structure of compound semiconductor devices and fabricating method thereof
US20110316006A1 (en) * 2010-02-11 2011-12-29 Tao Xu Surface-Textured Encapsulations for use with Light Emitting Diodes
US20110220920A1 (en) * 2010-03-09 2011-09-15 Brian Thomas Collins Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices
WO2012101488A1 (fr) * 2011-01-17 2012-08-02 Koninklijke Philips Electronics N.V. Boîtier de del comprenant une encapsulation

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016538723A (ja) * 2013-11-13 2016-12-08 ナノコ テクノロジーズ リミテッド 量子ドット蛍光体を含むｌｅｄキャップ
US10128418B2 (en) 2013-11-13 2018-11-13 Nanoco Technologies Ltd. LED cap containing quantum dot phosphors
CN113658943A (zh) * 2013-12-13 2021-11-16 晶元光电股份有限公司 发光装置及其制作方法
WO2015119858A1 (fr) * 2014-02-05 2015-08-13 Cooledge Lighting Inc. Puces électroluminescentes contenant des matériaux de conversion de longueurs d'ondes et procédés y relatifs
US9343443B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9343444B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9741906B2 (en) 2014-02-05 2017-08-22 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9941448B2 (en) 2014-02-05 2018-04-10 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US11677047B2 (en) 2014-02-05 2023-06-13 Epistar Corporation Light-emitting dies incorporating wavelength-conversion materials and related methods
US10270012B2 (en) 2014-02-05 2019-04-23 Epistar Corporation Light-emitting dies incorporating wavelength-conversion materials and related methods
US10770626B2 (en) 2014-02-05 2020-09-08 Epistar Corporation Light-emitting dies incorporating wavelength-conversion materials and related methods
US10553764B2 (en) 2014-02-05 2020-02-04 Epistar Corporation Light-emitting dies incorporating wavelength-conversion materials and related methods
EP3174109A1 (fr) * 2015-11-30 2017-05-31 Nichia Corporation Procédé de fabrication de dispositif électroluminescent
US10461065B2 (en) 2015-11-30 2019-10-29 Nichia Corporation Method of manufacturing light emitting device
US10825803B2 (en) 2015-11-30 2020-11-03 Nichia Corporation Light emitting device
US11791324B2 (en) 2015-11-30 2023-10-17 Nichia Corporation Light emitting device
US11393803B2 (en) 2015-11-30 2022-07-19 Nichia Corporation Light emitting device
CN111512436A (zh) * 2017-06-22 2020-08-07 欧司朗Oled股份有限公司 光电子器件
DE102017114011B4 (de) 2017-06-22 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement
US11101251B2 (en) 2017-06-22 2021-08-24 Osram Oled Gmbh Optoelectronic component
WO2018233870A1 (fr) * 2017-06-22 2018-12-27 Osram Opto Semiconductors Gmbh Composant optoélectronique
US11654207B2 (en) 2017-12-11 2023-05-23 W. L. Gore & Associates, Inc. Methods for producing flexible ultraviolet light generation sheets and systems
EP3724916B1 (fr) * 2017-12-11 2023-10-18 W. L. Gore & Associates, Inc. Procédés de production de feuilles et de systèmes de génération de lumière ultraviolette flexible
US11857689B2 (en) 2017-12-11 2024-01-02 W.L. Gore & Associates, Inc. Methods for producing flexible ultraviolet light generation sheets and systems
US20210210470A1 (en) * 2020-01-06 2021-07-08 Innolux Corporation Electronic device
CN113078179A (zh) * 2020-01-06 2021-07-06 群创光电股份有限公司 电子装置
US11742335B2 (en) * 2020-01-06 2023-08-29 Innolux Corporation Electronic device

Similar Documents

Publication Publication Date Title
US8907364B2 (en) LED package comprising encapsulation
EP2197051B1 (fr) Dispositif électroluminescent et son procédé de fabrication
US10431567B2 (en) White ceramic LED package
US9559278B2 (en) Light emitting device package
US9512968B2 (en) LED module
US7755099B2 (en) Light emitting device package
WO2013118076A1 (fr) Dispositif électroluminescent encapsulé de coût réduit
US20170301841A1 (en) Frame based package for flip-chip led
JP2014503122A5 (fr)
KR100634189B1 (ko) 박막형 발광 다이오드 패키지 및 그 제조 방법
JP2017108111A (ja) 斜角反射体を備えた発光素子およびその製造方法
US9726802B2 (en) Integrated back light unit
CN110085723B (zh) 发光单元及半导体发光装置
US20150357530A1 (en) Method for producing a plurality of optoelectronic components and optoelectronic component
US20100200887A1 (en) Light emitting device
US7811843B1 (en) Method of manufacturing light-emitting diode
KR20070001512A (ko) 발광 소자의 패키지 및 그의 제조 방법
JP2012134295A (ja) 半導体発光装置及びその製造方法
US20160172554A1 (en) Pc led with optical element and without ssubstrate carrier
TWI395346B (zh) 發光元件的封裝結構
JP2007281218A (ja) 発光ダイオードおよびその製造方法
US20140217437A1 (en) Light emitting apparatus and manufacturing method thereof
KR101039974B1 (ko) 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
US9312457B2 (en) Light emitting device and method for manufacturing the same
KR100609971B1 (ko) 발광 소자 패키지 및 그의 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13714335

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13714335

Country of ref document: EP

Kind code of ref document: A1