WO2013113537A3 - Elément optique, appareil lithographique comprenant cet élément, et procédé de fabrication d'un élément optique - Google Patents

Elément optique, appareil lithographique comprenant cet élément, et procédé de fabrication d'un élément optique Download PDF

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Publication number
WO2013113537A3
WO2013113537A3 PCT/EP2013/050395 EP2013050395W WO2013113537A3 WO 2013113537 A3 WO2013113537 A3 WO 2013113537A3 EP 2013050395 W EP2013050395 W EP 2013050395W WO 2013113537 A3 WO2013113537 A3 WO 2013113537A3
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
profile
euv
optical element
substrate
Prior art date
Application number
PCT/EP2013/050395
Other languages
English (en)
Other versions
WO2013113537A2 (fr
Inventor
Harmeet Singh
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2013113537A2 publication Critical patent/WO2013113537A2/fr
Publication of WO2013113537A3 publication Critical patent/WO2013113537A3/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/203—Filters having holographic or diffractive elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/067—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators using surface reflection, e.g. grazing incidence mirrors, gratings
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Un filtre de pureté spectrale est intégré avec une optique de collecteur (CO) dans un appareil de lithographie EUV. L'élément est recouvert sur au moins une surface (410) d'un empilement à couches multiples comprenant plusieurs couches de matériaux alternantes (par exemple Mo, Si) permettant de réfléchir un rayonnement de longueur d'onde EUV. Afin de fabriquer l'élément, on utilise un substrat (402) possédant un profil tridimensionnel (410a, 412, 410b) sur une échelle bien plus importante que la longueur d'onde du rayonnement EUV. L'empilement de couches multiples est ensuite appliqué comme une série de revêtements conformes formés par dépôt de couche atomique sur le substrat après la formation dudit profil. Le profil, tel que reproduit dans le revêtement MLM (310a, 312, 310b), forme un filtre de pureté spectrale. Les rayonnements indésirables comme le rayonnement infrarouge sont diffusés ou diffractés de sorte qu'une partie réduite est réfléchie dans la même direction que le rayonnement EUV réfléchi. Le profil peut être conçu de manière à former un réseau de phase, ou une texture de diffusion.
PCT/EP2013/050395 2012-01-30 2013-01-10 Elément optique, appareil lithographique comprenant cet élément, et procédé de fabrication d'un élément optique WO2013113537A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261592133P 2012-01-30 2012-01-30
US61/592,133 2012-01-30

Publications (2)

Publication Number Publication Date
WO2013113537A2 WO2013113537A2 (fr) 2013-08-08
WO2013113537A3 true WO2013113537A3 (fr) 2013-09-26

Family

ID=47522700

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2013/050395 WO2013113537A2 (fr) 2012-01-30 2013-01-10 Elément optique, appareil lithographique comprenant cet élément, et procédé de fabrication d'un élément optique

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WO (1) WO2013113537A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017026928A (ja) * 2015-07-27 2017-02-02 エヌ・ティ・ティ・アドバンステクノロジ株式会社 Ｅｕｖ光用多層膜反射鏡
CN105738976B (zh) * 2016-04-14 2017-11-17 清华大学深圳研究生院 一种在光学元件上制作涂镀层的方法及光学元件
WO2019166318A1 (fr) * 2018-03-02 2019-09-06 Asml Netherlands B.V. Procédé et appareil de formation d'une couche de matériau à motifs
EP3534211A1 (fr) * 2018-03-02 2019-09-04 ASML Netherlands B.V. Procédé et appareil de formation d'une couche de matériau à motifs
DE102020207807A1 (de) * 2020-06-24 2021-12-30 Carl Zeiss Smt Gmbh Optisches Element für eine EUV-Projektionsbelichtungsanlage
DE102020210553A1 (de) 2020-08-20 2022-03-24 Carl Zeiss Smt Gmbh Reflektierendes optisches Element, Beleuchtungsoptik, Projektionsbelichtungsanlage und Verfahren zum Bilden einer Schutzschicht
DE102020213639A1 (de) 2020-10-29 2022-05-05 Carl Zeiss Smt Gmbh Optisches Element, insbesondere zur Reflexion von EUV-Strahlung, optische Anordnung und Verfahren zum Herstellen eines optischen Elements
DE102021206168A1 (de) 2021-06-16 2022-12-22 Carl Zeiss Smt Gmbh Verfahren zum Abscheiden einer Deckschicht, reflektives optisches Element für den EUV-Wellenlängenbereich und EUV-Lithographiesystem
DE102021214362A1 (de) 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Verfahren zur Herstellung einer Schutzabdeckung und EUV-Lithographiesystem
DE102022203644A1 (de) 2022-04-12 2023-04-20 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Substrats und eines reflektiven optischen Elements für die EUV-Lithographie

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030058529A1 (en) * 2001-09-27 2003-03-27 Michael Goldstein Reflective spectral filtering of high power extreme ultra-violet radiation
EP1439426A2 (fr) * 2003-01-15 2004-07-21 ASML Holding N.V. Plaque de diffusion et procédé de fabrication
US20050122589A1 (en) * 2003-11-06 2005-06-09 Asml Netherlands B.V. Optical element, lithographic apparatus including such optical element and device manufacturing method, and device manufactured thereby
WO2009144117A1 (fr) * 2008-05-30 2009-12-03 Asml Netherlands B.V. Système de rayonnement, collecteur de rayonnement, système de conditionnement de faisceau de rayonnement, filtre assurant la pureté spectrale pour un système de rayonnement et procédé de formation d’un filtre assurant la pureté spectrale
US20110164237A1 (en) * 2008-09-26 2011-07-07 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter
US20110292366A1 (en) * 2009-02-13 2011-12-01 Asml Netherlands B.V. Multilayer mirror and lithographic apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
US9329503B2 (en) 2010-05-27 2016-05-03 Asml Netherlands B.V. Multilayer mirror

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030058529A1 (en) * 2001-09-27 2003-03-27 Michael Goldstein Reflective spectral filtering of high power extreme ultra-violet radiation
EP1439426A2 (fr) * 2003-01-15 2004-07-21 ASML Holding N.V. Plaque de diffusion et procédé de fabrication
US20050122589A1 (en) * 2003-11-06 2005-06-09 Asml Netherlands B.V. Optical element, lithographic apparatus including such optical element and device manufacturing method, and device manufactured thereby
WO2009144117A1 (fr) * 2008-05-30 2009-12-03 Asml Netherlands B.V. Système de rayonnement, collecteur de rayonnement, système de conditionnement de faisceau de rayonnement, filtre assurant la pureté spectrale pour un système de rayonnement et procédé de formation d’un filtre assurant la pureté spectrale
US20110164237A1 (en) * 2008-09-26 2011-07-07 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter
US20110292366A1 (en) * 2009-02-13 2011-12-01 Asml Netherlands B.V. Multilayer mirror and lithographic apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J F SEELY ET AL: "High-efficiency MoRu-Be multilayer-coated gratings operating near normal incidence in the 11.1-12.0-nm wavelength range", APPLIED OPTICS, vol. 40, no. 31, 1 November 2001 (2001-11-01), pages 5565 - 5574, XP002701101 *

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Publication number Publication date
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