WO2013105397A1 - High-frequency module - Google Patents

High-frequency module Download PDF

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Publication number
WO2013105397A1
WO2013105397A1 PCT/JP2012/082612 JP2012082612W WO2013105397A1 WO 2013105397 A1 WO2013105397 A1 WO 2013105397A1 JP 2012082612 W JP2012082612 W JP 2012082612W WO 2013105397 A1 WO2013105397 A1 WO 2013105397A1
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WO
WIPO (PCT)
Prior art keywords
rfic
frequency module
matching circuit
electronic component
frequency
Prior art date
Application number
PCT/JP2012/082612
Other languages
French (fr)
Japanese (ja)
Inventor
直樹 郷地
伸郎 池本
邦明 用水
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to CN201290001126.5U priority Critical patent/CN204316869U/en
Priority to JP2013553225A priority patent/JP5541424B2/en
Publication of WO2013105397A1 publication Critical patent/WO2013105397A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/165—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0066—Printed inductances with a magnetic layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/18—Networks for phase shifting
    • H03H7/19—Two-port phase shifters providing a predetermined phase shift, e.g. "all-pass" filters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0237—High frequency adaptations
    • H05K1/0243—Printed circuits associated with mounted high frequency components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/08—Magnetic details
    • H05K2201/083—Magnetic materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4697—Manufacturing multilayer circuits having cavities, e.g. for mounting components

Definitions

  • the present invention relates to a high-frequency module that is provided on a wiring board and includes an RFIC that is an electronic component that handles high-frequency signals, a matching circuit, and other electronic components.
  • the electronic component 502 incorporated in the module 500 is an RFIC that handles a high-frequency signal (RF signal)
  • RF signal radio frequency
  • other electronic components provided in the module 500 may malfunction due to noise caused by electromagnetic waves caused by high-frequency signals being radiated from the electronic component 502 or a wiring pattern connected to the electronic component 502, or the characteristics thereof may be reduced. There is a risk of deterioration.
  • the ground pattern 503 having a shape that covers one surface of the electronic component 502 without a gap is provided on the wiring board 501, so that the radiation noise from the electronic component 502 is reduced to other electronic components provided in the module 500. The effect on parts is reduced.
  • Japanese Unexamined Patent Publication No. 2006-303202 paragraphs 0020 to 0047, FIGS. 1 to 4, abstract, etc.
  • the wiring substrate 501 by providing the wiring substrate 501 with the ground pattern 503 having a shape that covers one surface of the electronic component 502 without a gap, the influence of radiation noise from the electronic component 502 on other electronic components can be reduced.
  • the wiring substrate 501 is provided with the ground pattern 503 having a shape that covers the entire surface of the electronic component 502 without any gap, the thickness of the wiring substrate 501 increases, which hinders the miniaturization of the module 500.
  • the wiring board 501 is provided with various passive elements such as inductor elements and capacitor elements to form a matching circuit or the like, depending on the arrangement relationship between the ground pattern 503 and the passive elements,
  • the coupling with the passive element causes problems such as changes in characteristics of the passive element and deterioration of the Q value of a circuit formed by the passive element.
  • the present invention has been made in view of the above-described problems, and can reduce the effect of radiation noise from an RFIC, which is an electronic component that handles a high-frequency signal, provided on a wiring board on other electronic components. It aims at providing the technique which can achieve size reduction of.
  • a high-frequency module includes an RFIC, which is an electronic component that handles a high-frequency signal, provided on a wiring board, a matching circuit, and another electronic component.
  • the wiring board includes a magnetic layer, the RFIC is provided on one main surface side of the magnetic layer, and the other electronic component is provided on the other main surface side of the magnetic layer, and the matching circuit Inductor elements for forming are provided on the magnetic layer.
  • the RFIC which is an electronic component that handles high-frequency signals
  • the RFIC is provided on one main surface side of the magnetic layer provided in the wiring board, and the other electronic component is on the other main surface side of the magnetic layer. Since the radiation noise (electromagnetic wave) from the RFIC due to the high-frequency signal being handled passes through the magnetic material layer (magnetic material) and is lost due to heat generation, the radiation noise from the RFIC is generated by other electrons. The influence on parts can be reduced.
  • the inductor element forming the matching circuit is provided in the magnetic layer and the inductance of the inductor element is increased, the inductor element can be reduced in size, so that the high-frequency module can be reduced in size.
  • the RFIC has a function of demodulating the input high-frequency signal into a baseband signal and modulating the baseband signal into the high-frequency signal, and the other electronic component is an IC that handles the baseband signal. It is good to be.
  • the other electronic component may be a passive element that forms the matching circuit together with the inductor element.
  • either one of the RFIC and the other electronic component is built in the wiring board.
  • the inductor element may include two coil patterns formed in a spiral shape in the thickness direction of the magnetic layer, and the two coil patterns may be arranged adjacent to each other and coupled with a predetermined mutual inductance.
  • both coil patterns are coupled with a predetermined mutual inductance and are arranged adjacent to the magnetic layer, so that an inductor element can be formed with a smaller number of turns. Magnetic field noise radiated from the element can be reduced.
  • the coil patterns may be arranged adjacent to each other so that at least the spiral winding axes do not overlap with each other, and a closed magnetic circuit is formed in the magnetic layer by a magnetic field generated in the coil patterns. .
  • both coil patterns are arrange
  • the matching circuit and the RFIC are connected, and the high-frequency signal input from the antenna element is input to the RFIC through the matching circuit, or the high-frequency signal output from the RFIC is passed through the matching circuit. Or radiated from the antenna element.
  • a high-frequency signal input from the antenna element is input to the RFIC through the matching circuit, or a high-frequency signal output from the RFIC is radiated from the antenna element through the matching circuit.
  • a high-frequency module having a simple configuration can be provided.
  • the RFIC may be an RFID IC.
  • RFID Radio It is possible to provide a high-frequency module having a practical configuration in which an IC for Frequency IDentification System) is mounted and the influence of radiation noise from the RFID IC on other electronic components is reduced.
  • the magnetic layer is disposed between the RFIC, which is an electronic component that handles high-frequency signals, and other electronic components, radiation noise (electromagnetic waves) from the RFIC caused by the high-frequency signals is magnetic. Heat is lost in the body. Therefore, it is possible to reduce the influence of radiation noise from the RFIC on other electronic components.
  • the inductor element forming the matching circuit is provided in the magnetic layer, and the inductance of the inductor element is increased. Therefore, the inductor element can be reduced in size, and thus the high-frequency module can be reduced in size.
  • FIG. 5 is a diagram showing an arrangement relationship of inductor elements provided on the wiring board of FIG. 4.
  • FIG. 5 shows the high frequency module concerning 2nd Embodiment of this invention.
  • FIG. 7 shows the arrangement
  • FIG. 1 is a functional block diagram of a communication terminal device in which the high frequency module according to the first embodiment of the present invention is mounted.
  • FIG. 2 is a diagram showing an equivalent circuit of the matching circuit of FIG.
  • FIG. 3 is a cross-sectional view showing the high-frequency module of FIG.
  • FIG. 4 is an exploded view of a wiring board provided in the high frequency module of FIG.
  • FIG. 5 is a view showing each resin layer provided in the wiring board of FIG.
  • FIG. 6 is a diagram showing the arrangement relationship of the inductor elements provided on the wiring board of FIG.
  • the communication terminal device 1 is configured as an NFC (Near Field Communication) device, and includes a host IC 2 mounted on a mother board or the like (not shown), a high frequency module 3, and an antenna element 4. I have.
  • NFC Near Field Communication
  • the host IC 2 includes a power supply circuit for supplying power to the high-frequency module 3 and a microprocessor that controls the high-frequency module 3 by executing a predetermined application.
  • the communication terminal device 1 executes an application for performing predetermined processing on the host IC 2 based on information included in the baseband signal output from the high-frequency module 3 to control the high-frequency module 3, so that FeliCa (Sony shares It is used for payment of electronic money using a near field communication standard represented by a registered trademark of the company.
  • the communication terminal device 1 when a predetermined application is executed in the host IC 2 and the high frequency module 3 is controlled, the communication terminal device 1 functions as a reader / writer device that performs near field communication with other non-contact IC cards (RF tags). Or peer-to-peer (P2P) communication between the communication terminal device 1 and another NFC device.
  • RF tags non-contact IC cards
  • P2P peer-to-peer
  • the high-frequency module 3 is mounted on a motherboard or the like of the communication terminal device 1 to form an RFID (Radio Frequency Identification) system, and handles electronic high-frequency signals (RF signals) input from the outside.
  • An impedance matching circuit 32 provided between the RFIC 31 and the antenna element 4, and a secure IC 33 connected to the host RFIC 31.
  • the RFIC 31 is formed by an IC for RFID, has a function necessary for short-range communication based on the NFC standard, and is an external reader / writer device (illustrated) input via the antenna element 4 and the matching circuit 32.
  • the communication RF signal output from (omitted) is demodulated into a baseband signal for processing, or based on information (control command) contained in the demodulated baseband signal and a control command from the host IC 2
  • the baseband signal encoded in (1) is modulated into an RF signal by a predetermined modulation method such as ASK modulation, and output through the matching circuit 32 and the antenna element 4.
  • the matching circuit 32 is formed of a general L-type low-pass filter by inductor elements L 1 and L 2 and capacitor elements C 1 and C 2, and the balanced terminal Pi is connected to the antenna element 4.
  • the balanced terminal Po is connected to the RFIC 31.
  • the inductor elements L1 and L2 are arranged so as to be coupled by mutual inductance M.
  • the secure IC 33 includes a memory for storing an identification code for identifying the mobile terminal device 1 and an encryption code for encryption processing necessary for electronic money settlement, a CPU for executing encryption processing, and the like. Yes, by executing predetermined processing based on a control command included in the baseband signal demodulated by the RFIC 31 or a control command from the host IC, predetermined information necessary for the settlement of the electronic money is included. Output baseband signal.
  • the memory included in the secure IC 33 is formed by a rewritable nonvolatile memory, and information such as an identification code and an encryption code stored in the memory of the secure IC 33 is appropriately rewritten by an application executed by the host IC 2. Is executed.
  • the high-frequency module 3 includes a multilayer resin wiring board 30, and various electronic components such as an RFIC 31, a matching circuit 32, and a secure IC 33 are provided on the multilayer resin wiring board 30.
  • the multilayer resin wiring board 30 includes dielectric layers 30a to 30d and 30h and magnetic layers 30e to 30g, and the magnetic layers 30e to 30g are interposed between the dielectric layers 30a to 30d and the dielectric layer 30h.
  • the matching circuit 32 is formed by inductor elements L1, L2 constituted by coil patterns 32a, 32b and capacitor elements 32c, 32d constituting capacitor elements C1, C2.
  • a front surface terminal 301 for mounting a surface mounting component is formed on the front surface (one main surface) of the multilayer resin wiring board 30, and the high frequency module 3 is connected to the back surface (the other main surface) of the communication terminal device 1.
  • a back terminal 302 is formed for connection to a motherboard or the like.
  • Each of the resin layers 30a to 30h is provided with an in-plane conductor pattern 303 and an interlayer conductor pattern 304 (via conductor). These conductor patterns 303 and 304 form various passive elements, Various electronic components provided on the resin wiring board 30 are electrically connected.
  • the magnetic layers 30e to 30g are provided with inductor elements L1 and L2 respectively formed by two coil patterns 32a and 32b formed in a spiral shape in the thickness direction. Further, as shown in FIG. 6, the two coil patterns 32a and 32b are arranged adjacent to each other in the layer direction, and the magnetic field MF is coupled with the mutual inductance M by passing through the winding centers of the two coil patterns 32a and 32b. Yes.
  • the inductor element L1 is formed in a spiral shape by connecting the coil patterns 32a formed on the magnetic layers 30f and 30g with the interlayer conductor pattern 304, and the inductor element L2 includes the dielectric layer 30d and the magnetic body.
  • the coil pattern 32b formed on each layer 30e is connected to the interlayer conductor pattern 304 to form a spiral shape.
  • a capacitor element that forms the matching circuit 32 together with the RFIC 31 and the inductor elements L1 and L2 is provided on the surface terminal 301 provided on the surface of the multilayer resin wiring board 30 which is one main surface side of the magnetic layers 30e to 30g.
  • Capacitor elements 32c and 32d are provided as C1 and C2.
  • the secure IC 33 is built in the dielectric layers 30b and 30c on the other main surface side of the magnetic layers 30e to 30g.
  • the secure IC 33 includes a rewiring layer having a post electrode 33b connected to an integrated circuit provided on a semiconductor substrate 33a such as Si or GaAs, and a resin sealing layer 33c formed so as to cover a side surface of the post electrode 33b. It is formed in a so-called CSP (chip size package), and the end face of the post electrode 33b exposed from the resin sealing increase 33c and the interlayer conductor pattern 304 are directly connected.
  • CSP chip size package
  • the dielectric layers 30a to 30d and 30h are made of a heat-resistant thermoplastic resin such as polyimide or liquid crystal polymer
  • the magnetic layers 30e to 30g are made of thermoplastic resin such as polyimide or liquid crystal polymer with ferrite powder or the like.
  • the magnetic powder is mixed to form.
  • the front surface terminal 301, the back surface terminal 302, the in-plane conductor pattern 303, and the interlayer conductor pattern 304 are formed of a metal material having a small specific resistance mainly composed of silver or copper.
  • the resin layers 30a to 30h are preferably formed of a liquid crystal polymer because they have excellent high frequency transmission characteristics with low loss as compared with general resin substrate materials.
  • the in-plane conductor pattern 303 and the interlayer conductor pattern 304 are formed by using a well-known method using screen printing, laser processing, etc.
  • Body layers 30a-30d, 30h and magnetic layers 30e-30g are prepared.
  • the dielectric layers 30b, 30c having the openings OP are exposed from the resin sealing layer 33c in the cavities formed by temporary pressure bonding.
  • the secure IC 33 is arranged so that the end surface of the post electrode 33b faces upward.
  • the high frequency module 3 is manufactured by thermocompression bonding.
  • the RFIC 31 which is an electronic component that handles RF signals for communication, is provided on one main surface side of the magnetic layers 30e to 30g included in the multilayer resin substrate 30, and the other electronic components Since the secure IC 33 is provided on the other main surface side of the magnetic layers 30e to 30g, radiation noise (electromagnetic waves) from the RFIC 31 caused by a high-frequency signal to be handled is the magnetic layers 30e to 30g (magnetic material). Since heat is generated and lost by passing through, the influence of radiation noise from the RFIC 31 on other electronic components such as the secure IC 33 can be reduced, and the isolation characteristics between the RFIC 31 and the secure IC 33 are improved. can do.
  • the inductor elements L1 and L2 forming the matching circuit 32 are provided in the magnetic layers 30e to 30g, and the inductances of the inductor elements L1 and L2 increase. Therefore, the inductor elements L1 and L2 can be downsized. Therefore, the high-frequency module 3 can be reduced in size.
  • the characteristic of the passive element is changed by combining the ground pattern formed in a shape that covers one surface of the electronic component without a gap and the various passive elements provided on the multilayer resin substrate 30 as in the past. There is no possibility that the Q value of a circuit formed by the passive element deteriorates.
  • each of the magnetic layers 30e to 30g is formed by mixing a magnetic powder with a resin material, the rigidity is higher than that of the dielectric layers 30a to 30d and 30h, and the multilayer resin wiring board 30 has a higher rigidity. Stiffness can be improved. Therefore, the flexural strength of the high-frequency module 3 can be improved, and the mechanical strength of the RFIC 31 mounted on the multilayer resin wiring substrate 30 and the built-in secure IC 33 can be reinforced.
  • the magnetic layers 30e to 30g are arranged between the RFIC 31 and the secure IC 33, the RFIC 31 caused by the RF signal is transmitted to the secure IC 33 that handles the baseband signal obtained by demodulating the input RF signal by the RFIC 31. It is possible to prevent the radiation noise from affecting.
  • the secure IC 33 is built in the multilayer resin wiring board 30, the high-frequency module 3 can be reduced in size.
  • the coil patterns 32a and 32b are coupled with a predetermined mutual inductance M and are arranged adjacent to the magnetic layers 30e to 30g in the layer direction, so that the inductor elements L1 and L2 can be formed with a smaller number of turns. L1 and L2 can be reduced in size, and magnetic field noise radiated from the inductor elements L1 and L2 can be reduced.
  • FIG. 7 is a sectional view showing a high-frequency module according to the second embodiment of the present invention.
  • FIG. 8 is a diagram showing an arrangement relationship of inductor elements provided on a wiring board provided in the high frequency module of FIG. This embodiment differs from the first embodiment described above in that a secure IC 33 is provided on the surface terminal 301 on the surface of the multilayer resin wiring board 30 on one main surface side of the magnetic layers 30e to 30g, as shown in FIG.
  • the RFIC 31 is built in the dielectric layers 30b and 30c on the other main surface side of the magnetic layers 30e to 30g.
  • the coil patterns 32a and 32b are arranged adjacent to each other in the plane direction of the magnetic layers 30e to 30g so that at least the spiral winding axes do not overlap with each other, and the inductor elements L1 and L2 are formed.
  • the inductor elements L1 and L2 are arranged in the magnetic layers 30e to 30g so as to form a closed magnetic path due to the magnetic field MF generated in the coil patterns 32a and 32b. Since other configurations are the same as those in the first embodiment, description of the configuration is omitted by giving the same reference numerals.
  • the RFIC 31 includes a post electrode 31b connected to an integrated circuit provided on a semiconductor substrate 31a such as Si or GaAs, and a resin sealing layer 31c formed so as to cover the side surface of the post electrode 31b.
  • the wiring layer is provided and is formed in a so-called CSP, and the end face of the post electrode 31b exposed from the resin sealing layer 31c and the interlayer conductor pattern 304 are directly connected.
  • a heat dissipation interlayer conductor pattern 304a is connected to the surface of the RFIC 31 opposite to the integrated circuit formation surface of the semiconductor substrate 31a, and the heat of the RFIC 31 is radiated to the outside of the multilayer resin substrate 30. Has been.
  • coil patterns 32a and 32b are formed on the magnetic layers 30e to 30g so as to be adjacent to each other in the plane direction.
  • the coil patterns 32a and 32b formed on the magnetic layers 30e to 30g are connected to each other by the interlayer conductor pattern 304, thereby forming spiral inductor elements L1 and L2.
  • the two coil patterns 32a and 32b forming the inductor elements L1 and L2 are arranged so that at least the spiral winding axes do not overlap with each other, and the two coil patterns 32a and 32b are formed in the magnetic layers 30e to 30g. Since the closed magnetic circuit is formed by the magnetic field MF generated in 32b, magnetic field noise radiated from the inductor elements L1 and L2 can be reduced.
  • Capacitor elements C1 and C2 (capacitor elements 32c and 32d), which are passive elements that form the matching circuit 32 together with the inductor elements L1 and L2, and the RFIC 31 are arranged with the magnetic layers 30e to 30g interposed therebetween. Therefore, it is possible to prevent radiation noise from the RFIC 31 caused by the RF signal from affecting the capacitor elements C1 and C2 and changing the characteristics of the matching circuit 32.
  • the present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention.
  • the high-frequency module 3 is described as an example for configuring an RFID system, but the high-frequency module to which the present invention is applied is not limited thereto.
  • either one of the RFIC 31 and the secure IC 33 is not necessarily built in the multilayer resin substrate 30, and the RFIC 31 and the secure IC 33 may be arranged with the magnetic layers 30e to 30g interposed therebetween. Further, the wiring board may be formed of only the magnetic layer. In this case, the RFIC 31 may be disposed on one surface of the magnetic layer and the secure IC 33 may be disposed on the other surface.
  • the present invention can be widely applied to a high-frequency module that is provided on a wiring board and includes an RFIC that is an electronic component that handles high-frequency signals, a matching circuit, and other electronic components.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Transceivers (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Structure Of Receivers (AREA)
  • Transmitters (AREA)

Abstract

Provided is a technology that enables an impact of a radiated noise from an RFIC, which is an electronic component for handling a high-frequency signal, on other electronic component to be reduced, and a module to be made smaller. Because magnetic body layers (30e-30g) are provided between the RFIC (31), which is the electronic component for handling the RF signal, and a secure IC (33), a radiated noise (electromagnetic wave) from the RFIC (31), which is caused by the RF signal, is lost due to heating as the radiated noise passes through the magnetic body layers (30e-30g), so the impact of the radiated noise from the RFIC (31) on other electronic component such as the secure IC (33) can be reduced. In addition, because inductor components (L1, L2), which constitute a matching circuit (32), are respectively provided in the magnetic body layers (30e-30g) so as to increase the inductances of the respective inductor components (L1, L2), the respective inductor components (L1, L2) can be made smaller, so that this high-frequency module (3) can be made smaller.

Description

高周波モジュールHigh frequency module
　本発明は、配線基板に設けられた、高周波信号を取り扱う電子部品であるＲＦＩＣと、整合回路と、他の電子部品とを備える高周波モジュールに関する。 The present invention relates to a high-frequency module that is provided on a wiring board and includes an RFIC that is an electronic component that handles high-frequency signals, a matching circuit, and other electronic components.
　近年、携帯電話やスマートフォン、携帯情報端末などの通信端末装置の多機能化および高機能化が進むと共に小型化が要求されており、装置に内蔵される各種の電子部品の高機能化および小型化が要望されている。そこで、各種の電子部品を配線基板に内蔵することにより高集積化されて、高機能化および小型化が図られたモジュールが提案されている（例えば、特許文献１参照）。図９に示す従来のモジュール５００では、配線基板５０１に電子部品５０２が内蔵されると共に、配線基板５０１の実装面５０１ａに、受動素子やＩＣなどの他の電子部品（図示省略）が実装されることにより、モジュール５００の高機能化および小型化が図られている。 In recent years, communication terminals such as mobile phones, smartphones, and personal digital assistants have become more and more functional and have been required to be smaller, and various electronic components incorporated in the devices have been improved in function and size. Is desired. In view of this, a module has been proposed in which various electronic components are built into a wiring board to achieve high integration and high functionality and miniaturization (see, for example, Patent Document 1). In the conventional module 500 shown in FIG. 9, the electronic component 502 is built in the wiring substrate 501 and other electronic components (not shown) such as passive elements and ICs are mounted on the mounting surface 501a of the wiring substrate 501. As a result, the module 500 is enhanced in function and size.
　ところで、モジュール５００に内蔵される電子部品５０２が高周波信号（ＲＦ信号）を取り扱うＲＦＩＣである場合に、取り扱われる高周波信号に起因する電子部品５０２からの輻射ノイズが問題となっている。すなわち、電子部品５０２や、電子部品５０２に接続される配線パターンから高周波信号に起因する電磁波が輻射されることによるノイズにより、モジュール５００に設けられた他の電子部品が誤動作したり、その特性が劣化したりするおそれがある。 Incidentally, when the electronic component 502 incorporated in the module 500 is an RFIC that handles a high-frequency signal (RF signal), radiation noise from the electronic component 502 caused by the handled high-frequency signal is a problem. That is, other electronic components provided in the module 500 may malfunction due to noise caused by electromagnetic waves caused by high-frequency signals being radiated from the electronic component 502 or a wiring pattern connected to the electronic component 502, or the characteristics thereof may be reduced. There is a risk of deterioration.
　そこで、従来のモジュール５００では、電子部品５０２の一面を隙間無く覆う形状のグランドパターン５０３が配線基板５０１に設けられることにより、電子部品５０２からの輻射ノイズが、モジュール５００に設けられた他の電子部品に与える影響の低減が図られている。 Therefore, in the conventional module 500, the ground pattern 503 having a shape that covers one surface of the electronic component 502 without a gap is provided on the wiring board 501, so that the radiation noise from the electronic component 502 is reduced to other electronic components provided in the module 500. The effect on parts is reduced.
特開２００６－３０３２０２号公報（段落００２０～００４７、図１～４、要約書など）Japanese Unexamined Patent Publication No. 2006-303202 (paragraphs 0020 to 0047, FIGS. 1 to 4, abstract, etc.)
　上記したように、電子部品５０２の一面を隙間無く覆う形状のグランドパターン５０３を配線基板５０１設けることにより、電子部品５０２からの輻射ノイズが他の電子部品に与える影響を低減することができるが、その一方で、配線基板５０１に電子部品５０２の一面を隙間無く覆う形状のグランドパターン５０３が設けられることにより、配線基板５０１の厚みが増すため、モジュール５００の小型化の妨げとなっている。また、配線基板５０１に、例えばインダクタ素子やキャパシタ素子などの各種受動素子が設けられて整合回路等が形成されている場合に、グランドパターン５０３と受動素子との配置関係によっては、グランドパターン５０３と受動素子とが結合することで、受動素子の特性が変化したり、当該受動素子により形成される回路のＱ値が劣化するなどの問題が生じる。 As described above, by providing the wiring substrate 501 with the ground pattern 503 having a shape that covers one surface of the electronic component 502 without a gap, the influence of radiation noise from the electronic component 502 on other electronic components can be reduced. On the other hand, since the wiring substrate 501 is provided with the ground pattern 503 having a shape that covers the entire surface of the electronic component 502 without any gap, the thickness of the wiring substrate 501 increases, which hinders the miniaturization of the module 500. In addition, when the wiring board 501 is provided with various passive elements such as inductor elements and capacitor elements to form a matching circuit or the like, depending on the arrangement relationship between the ground pattern 503 and the passive elements, The coupling with the passive element causes problems such as changes in characteristics of the passive element and deterioration of the Q value of a circuit formed by the passive element.
　この発明は、上記した課題に鑑みてなされたものであり、配線基板に設けられた、高周波信号を取り扱う電子部品であるＲＦＩＣからの輻射ノイズが他の電子部品に与える影響を低減できると共に、モジュールの小型化を図ることができる技術を提供することを目的とする。 The present invention has been made in view of the above-described problems, and can reduce the effect of radiation noise from an RFIC, which is an electronic component that handles a high-frequency signal, provided on a wiring board on other electronic components. It aims at providing the technique which can achieve size reduction of.
　上記した目的を達成するために、本発明の高周波モジュールは、配線基板に設けられた、高周波信号を取り扱う電子部品であるＲＦＩＣと、整合回路と、他の電子部品とを備える高周波モジュールにおいて、前記配線基板は磁性体層を備え、前記ＲＦＩＣは、前記磁性体層の一方主面側に設けられ、前記他の電子部品は、前記磁性体層の他方主面側に設けられて、前記整合回路を形成するインダクタ素子が前記磁性体層に設けられていることを特徴としている。 In order to achieve the above object, a high-frequency module according to the present invention includes an RFIC, which is an electronic component that handles a high-frequency signal, provided on a wiring board, a matching circuit, and another electronic component. The wiring board includes a magnetic layer, the RFIC is provided on one main surface side of the magnetic layer, and the other electronic component is provided on the other main surface side of the magnetic layer, and the matching circuit Inductor elements for forming are provided on the magnetic layer.
　このように構成された発明では、高周波信号を取り扱う電子部品であるＲＦＩＣは、配線基板が備える磁性体層の一方主面側に設けられ、他の電子部品は、磁性体層の他方主面側に設けられているため、取り扱われる高周波信号に起因するＲＦＩＣからの輻射ノイズ（電磁波）は磁性体層（磁性体）通過することにより発熱して損失するので、ＲＦＩＣからの輻射ノイズが他の電子部品に与える影響を低減することができる。また、整合回路を形成するインダクタ素子が磁性体層に設けられており、インダクタ素子のインダクタンスが増大するためインダクタ素子を小型化することができるので、高周波モジュールの小型化を図ることができる。 In the thus configured invention, the RFIC, which is an electronic component that handles high-frequency signals, is provided on one main surface side of the magnetic layer provided in the wiring board, and the other electronic component is on the other main surface side of the magnetic layer. Since the radiation noise (electromagnetic wave) from the RFIC due to the high-frequency signal being handled passes through the magnetic material layer (magnetic material) and is lost due to heat generation, the radiation noise from the RFIC is generated by other electrons. The influence on parts can be reduced. In addition, since the inductor element forming the matching circuit is provided in the magnetic layer and the inductance of the inductor element is increased, the inductor element can be reduced in size, so that the high-frequency module can be reduced in size.
　また、前記ＲＦＩＣは、入力された前記高周波信号をベースバンド信号に復調し、前記ベースバンド信号を前記高周波信号に変調する機能を有し、前記他の電子部品は、前記ベースバンド信号を取り扱うＩＣであるとよい。 The RFIC has a function of demodulating the input high-frequency signal into a baseband signal and modulating the baseband signal into the high-frequency signal, and the other electronic component is an IC that handles the baseband signal. It is good to be.
　このように構成すると、入力された高周波信号がＲＦＩＣにより復調されたベースバンド信号を取り扱うＩＣに、高周波信号に起因するＲＦＩＣからの輻射ノイズが影響を与えるのを防止することができる。 With this configuration, it is possible to prevent the radiation noise from the RFIC due to the high frequency signal from affecting the IC that handles the baseband signal obtained by demodulating the input high frequency signal by the RFIC.
　また、前記他の電子部品は、前記インダクタ素子と共に前記整合回路を形成する受動素子であってもよい。 Further, the other electronic component may be a passive element that forms the matching circuit together with the inductor element.
　このように構成すると、高周波信号に起因するＲＦＩＣからの輻射ノイズが影響を与えて整合回路の特性が変化するのを防止することができる。 With this configuration, it is possible to prevent the characteristics of the matching circuit from changing due to the influence of radiation noise from the RFIC caused by the high frequency signal.
　また、前記ＲＦＩＣおよび前記他の電子部品のいずれか一方が前記配線基板に内蔵されているとよい。 Further, it is preferable that either one of the RFIC and the other electronic component is built in the wiring board.
　このように構成すれば、ＲＦＩＣおよび電子部品のいずれか一方が配線基板に内蔵されるので、高周波モジュールの小型化を図ることができる。 With this configuration, either the RFIC or the electronic component is built in the wiring board, so that the high-frequency module can be reduced in size.
　また、前記インダクタ素子は、前記磁性体層の厚み方向にらせん状に形成された２個のコイルパターンを備え、前記両コイルパターンは隣接配置されて所定の相互インダクタンスで結合していてもよい。 The inductor element may include two coil patterns formed in a spiral shape in the thickness direction of the magnetic layer, and the two coil patterns may be arranged adjacent to each other and coupled with a predetermined mutual inductance.
　このように構成されると、両コイルパターンが所定の相互インダクタンスで結合されて磁性体層に隣接配置されており、より少ない巻数でインダクタ素子を形成できるので、インダクタ素子を小型化できると共に、インダクタ素子から放射される磁界ノイズを低減することができる。 With this configuration, both coil patterns are coupled with a predetermined mutual inductance and are arranged adjacent to the magnetic layer, so that an inductor element can be formed with a smaller number of turns. Magnetic field noise radiated from the element can be reduced.
　また、前記両コイルパターンは、少なくとも互いのらせん形状の巻回軸が重ならないように隣接配置されており、前記磁性体層内に前記両コイルパターンに生じる磁界による閉磁路が形成されるとよい。 The coil patterns may be arranged adjacent to each other so that at least the spiral winding axes do not overlap with each other, and a closed magnetic circuit is formed in the magnetic layer by a magnetic field generated in the coil patterns. .
　このように構成されると、両コイルパターンが、少なくとも互いのらせん形状の巻回軸が重ならないように配置されて、磁性体層内に両コイルパターンに生じる磁界による閉磁路が形成されるので、インダクタ素子から放射される磁界ノイズを低減することができる。 If comprised in this way, since both coil patterns are arrange | positioned so that a mutual spiral winding axis | shaft may not overlap, the closed magnetic circuit by the magnetic field produced in both coil patterns is formed in a magnetic body layer. Magnetic field noise radiated from the inductor element can be reduced.
　また、前記整合回路および前記ＲＦＩＣが接続されており、アンテナ素子から入力された前記高周波信号が前記整合回路を介して前記ＲＦＩＣに入力されたり、前記ＲＦＩＣから出力された高周波信号が前記整合回路を介してアンテナ素子から放射されたりするとよい。 The matching circuit and the RFIC are connected, and the high-frequency signal input from the antenna element is input to the RFIC through the matching circuit, or the high-frequency signal output from the RFIC is passed through the matching circuit. Or radiated from the antenna element.
　このように構成することにより、アンテナ素子から入力された高周波信号が整合回路を介してＲＦＩＣに入力されたり、ＲＦＩＣから出力された高周波信号が整合回路を介してアンテナ素子から放射されたりする実用的な構成の高周波モジュールを提供することができる。 With this configuration, a high-frequency signal input from the antenna element is input to the RFIC through the matching circuit, or a high-frequency signal output from the RFIC is radiated from the antenna element through the matching circuit. A high-frequency module having a simple configuration can be provided.
　また、前記ＲＦＩＣは、ＲＦＩＤ用ＩＣであるとよい。 The RFIC may be an RFID IC.
　このように構成すると、ＲＦＩＤ（Radio
Frequency IDentification System）用のＩＣを搭載すると共に、ＲＦＩＤ用ＩＣからの輻射ノイズが他の電子部品に与える影響が低減された実用的な構成の高周波モジュールを提供することができる。 With this configuration, RFID (Radio
It is possible to provide a high-frequency module having a practical configuration in which an IC for Frequency IDentification System) is mounted and the influence of radiation noise from the RFID IC on other electronic components is reduced.
　本発明によれば、高周波信号を取り扱う電子部品であるＲＦＩＣと、他の電子部品との間に磁性体層が配置されているため、高周波信号に起因するＲＦＩＣからの輻射ノイズ（電磁波）は磁性体において発熱して損失する。したがって、ＲＦＩＣからの輻射ノイズが他の電子部品に与える影響を低減することができる。また、整合回路を形成するインダクタ素子が磁性体層に設けられており、インダクタ素子のインダクタンスが増大する。したがって、インダクタ素子を小型化することができ、ひいては高周波モジュールの小型化を図ることができる。 According to the present invention, since the magnetic layer is disposed between the RFIC, which is an electronic component that handles high-frequency signals, and other electronic components, radiation noise (electromagnetic waves) from the RFIC caused by the high-frequency signals is magnetic. Heat is lost in the body. Therefore, it is possible to reduce the influence of radiation noise from the RFIC on other electronic components. Further, the inductor element forming the matching circuit is provided in the magnetic layer, and the inductance of the inductor element is increased. Therefore, the inductor element can be reduced in size, and thus the high-frequency module can be reduced in size.
本発明の第１実施形態にかかる高周波モジュールが搭載される通信端末装置の機能ブロック図である。It is a functional block diagram of the communication terminal device by which the high frequency module concerning 1st Embodiment of this invention is mounted. 図１の整合回路の等価回路を示す図である。It is a figure which shows the equivalent circuit of the matching circuit of FIG. 図１の高周波モジュールを示す断面図である。It is sectional drawing which shows the high frequency module of FIG. 図２の高周波モジュールが備える配線基板の分解図である。It is an exploded view of the wiring board with which the high frequency module of FIG. 2 is provided. 図４の配線基板が備える各樹脂層を示す図である。It is a figure which shows each resin layer with which the wiring board of FIG. 4 is provided. 図４の配線基板に設けられたインダクタ素子の配置関係を示す図である。FIG. 5 is a diagram showing an arrangement relationship of inductor elements provided on the wiring board of FIG. 4. 本発明の第２実施形態にかかる高周波モジュールを示す断面図である。It is sectional drawing which shows the high frequency module concerning 2nd Embodiment of this invention. 図７の高周波モジュールが備える配線基板に設けられたインダクタ素子の配置関係を示す図である。It is a figure which shows the arrangement | positioning relationship of the inductor element provided in the wiring board with which the high frequency module of FIG. 7 is provided. 従来のモジュールの一例を示す図である。It is a figure which shows an example of the conventional module.
　＜第１実施形態＞
　本発明の第１実施形態たる高周波モジュールが搭載された通信端末装置について、図１～図６を参照して説明する。図１は本発明の第１実施形態にかかる高周波モジュールが搭載される通信端末装置の機能ブロック図である。図２は図１の整合回路の等価回路を示す図である。図３は図１の高周波モジュールを示す断面図である。図４は図３の高周波モジュールが備える配線基板の分解図である。図５は図４の配線基板が備える各樹脂層を示す図である。図６は図４の配線基板に設けられたインダクタ素子の配置関係を示す図である。 <First Embodiment>
A communication terminal device on which the high-frequency module according to the first embodiment of the present invention is mounted will be described with reference to FIGS. FIG. 1 is a functional block diagram of a communication terminal device in which the high frequency module according to the first embodiment of the present invention is mounted. FIG. 2 is a diagram showing an equivalent circuit of the matching circuit of FIG. FIG. 3 is a cross-sectional view showing the high-frequency module of FIG. FIG. 4 is an exploded view of a wiring board provided in the high frequency module of FIG. FIG. 5 is a view showing each resin layer provided in the wiring board of FIG. FIG. 6 is a diagram showing the arrangement relationship of the inductor elements provided on the wiring board of FIG.
　図１に示すように、通信端末装置１は、ＮＦＣ（Near Field Communication）デバイスとして構成されており、マザーボード等（図示省略）に搭載されるホストＩＣ２と、高周波モジュール３と、アンテナ素子４とを備えている。 As shown in FIG. 1, the communication terminal device 1 is configured as an NFC (Near Field Communication) device, and includes a host IC 2 mounted on a mother board or the like (not shown), a high frequency module 3, and an antenna element 4. I have.
　ホストＩＣ２は、高周波モジュール３への給電用の電源回路や、所定のアプリケーションを実行することにより高周波モジュール３を制御するマイクロプロセッサなどを備えている。通信端末装置１は、高周波モジュール３から出力されるベースバンド信号に含まれる情報に基づいて所定の処理を行うアプリケーションがホストＩＣ２において実行されて高周波モジュール３が制御されることにより、ＦｅｌｉＣａ（ソニー株式会社の登録商標）に代表される近距離通信規格を利用した電子マネーの決済等に使用される。 The host IC 2 includes a power supply circuit for supplying power to the high-frequency module 3 and a microprocessor that controls the high-frequency module 3 by executing a predetermined application. The communication terminal device 1 executes an application for performing predetermined processing on the host IC 2 based on information included in the baseband signal output from the high-frequency module 3 to control the high-frequency module 3, so that FeliCa (Sony shares It is used for payment of electronic money using a near field communication standard represented by a registered trademark of the company.
　また、ホストＩＣ２において所定のアプリケーションが実行されて高周波モジュール３が制御されることにより、通信端末装置１が、他の非接触ＩＣカード（ＲＦタグ）と近距離通信を行うリーダ・ライタ装置として機能したり、通信端末装置１と他のＮＦＣデバイスとの間でピア・ツー・ピア（Ｐ２Ｐ）通信を実行したりできる。 Further, when a predetermined application is executed in the host IC 2 and the high frequency module 3 is controlled, the communication terminal device 1 functions as a reader / writer device that performs near field communication with other non-contact IC cards (RF tags). Or peer-to-peer (P2P) communication between the communication terminal device 1 and another NFC device.
　高周波モジュール３は、通信端末装置１のマザーボード等に搭載されてＲＦＩＤ（Radio Frequency IDentification）システムを構成するためのものであり、外部から入力される通信用の高周波信号（ＲＦ信号）を取り扱う電子部品であるＲＦＩＣ３１と、ＲＦＩＣ３１およびアンテナ素子４の間に設けられたインピーダンスマッチング用の整合回路３２と、ホストＲＦＩＣ３１に接続されたセキュアＩＣ３３とを備えている。 The high-frequency module 3 is mounted on a motherboard or the like of the communication terminal device 1 to form an RFID (Radio Frequency Identification) system, and handles electronic high-frequency signals (RF signals) input from the outside. , An impedance matching circuit 32 provided between the RFIC 31 and the antenna element 4, and a secure IC 33 connected to the host RFIC 31.
　ＲＦＩＣ３１は、ＲＦＩＤ用ＩＣにより形成されており、ＮＦＣ規格に基づく近距離通信に必要な機能を有しており、アンテナ素子４および整合回路３２を介して入力される外部のリーダ・ライタ装置（図示省略）から出力された通信用のＲＦ信号をベースバンド信号に復調して処理したり、復調されたベースバンド信号に含まれる情報（制御コマンド）やホストＩＣ２からの制御指令に基づいて所定の方式で符号化されたベースバンド信号をＡＳＫ変調等の所定の変調方式によりＲＦ信号に変調して整合回路３２およびアンテナ素子４を介して出力する機能を有する。 The RFIC 31 is formed by an IC for RFID, has a function necessary for short-range communication based on the NFC standard, and is an external reader / writer device (illustrated) input via the antenna element 4 and the matching circuit 32. The communication RF signal output from (omitted) is demodulated into a baseband signal for processing, or based on information (control command) contained in the demodulated baseband signal and a control command from the host IC 2 The baseband signal encoded in (1) is modulated into an RF signal by a predetermined modulation method such as ASK modulation, and output through the matching circuit 32 and the antenna element 4.
　また、図２に示すように、整合回路３２は、インダクタ素子Ｌ１，Ｌ２およびキャパシタ素子Ｃ１，Ｃ２により一般的なＬ型のローパスフィルタにより形成されており、平衡端子Ｐｉがアンテナ素子４に接続され、平衡端子ＰｏがＲＦＩＣ３１に接続されている。なお、後述するように、インダクタ素子Ｌ１，Ｌ２は相互インダクタンスＭで結合するように配置されている。 As shown in FIG. 2, the matching circuit 32 is formed of a general L-type low-pass filter by inductor elements L 1 and L 2 and capacitor elements C 1 and C 2, and the balanced terminal Pi is connected to the antenna element 4. The balanced terminal Po is connected to the RFIC 31. As will be described later, the inductor elements L1 and L2 are arranged so as to be coupled by mutual inductance M.
　セキュアＩＣ３３は、電子マネーの決済等に必要な、携帯端末装置１を識別するための識別コードや暗号処理するための暗号コード等を格納するメモリや、暗号処理を実行するＣＰＵなどを備えるものであり、ＲＦＩＣ３１により復調されたベースバンド信号に含まれる制御コマンドや、ホストＩＣからの制御指令などに基づいて所定の処理を実行することにより、前記電子マネーの決済等に必要な所定の情報が含まれるベースバンド信号を出力する。 The secure IC 33 includes a memory for storing an identification code for identifying the mobile terminal device 1 and an encryption code for encryption processing necessary for electronic money settlement, a CPU for executing encryption processing, and the like. Yes, by executing predetermined processing based on a control command included in the baseband signal demodulated by the RFIC 31 or a control command from the host IC, predetermined information necessary for the settlement of the electronic money is included. Output baseband signal.
　なお、セキュアＩＣ３３が備えるメモリは書換可能な不揮発性のメモリにより形成されており、ホストＩＣ２により実行されるアプリケーションにより、適宜、セキュアＩＣ３３のメモリに格納される識別コードや暗号コード等の情報の書き換えが実行される。 Note that the memory included in the secure IC 33 is formed by a rewritable nonvolatile memory, and information such as an identification code and an encryption code stored in the memory of the secure IC 33 is appropriately rewritten by an application executed by the host IC 2. Is executed.
　次に、高周波モジュール３の構成について説明する。なお、図３～図５では、説明を容易なものとするため、本発明の説明に必要な構成のみ図示されている。 Next, the configuration of the high frequency module 3 will be described. 3 to 5, only the components necessary for the description of the present invention are shown for ease of explanation.
　高周波モジュール３は、多層樹脂配線基板３０を備え、ＲＦＩＣ３１、整合回路３２およびセキュアＩＣ３３などの各種の電子部品が多層樹脂配線基板３０に設けられている。多層樹脂配線基板３０は、誘電体層３０ａ～３０ｄ，３０ｈと、磁性体層３０ｅ～３０ｇとを備え、磁性体層３０ｅ～３０ｇは、誘電体層３０ａ～３０ｄと誘電体層３０ｈとの間に配置されている。なお、整合回路３２は、コイルパターン３２ａ，３２ｂにより構成されるインダクタ素子Ｌ１，Ｌ２およびキャパシタ素子Ｃ１，Ｃ２を構成するキャパシタ素子３２ｃ，３２ｄにより形成されている。 The high-frequency module 3 includes a multilayer resin wiring board 30, and various electronic components such as an RFIC 31, a matching circuit 32, and a secure IC 33 are provided on the multilayer resin wiring board 30. The multilayer resin wiring board 30 includes dielectric layers 30a to 30d and 30h and magnetic layers 30e to 30g, and the magnetic layers 30e to 30g are interposed between the dielectric layers 30a to 30d and the dielectric layer 30h. Has been placed. The matching circuit 32 is formed by inductor elements L1, L2 constituted by coil patterns 32a, 32b and capacitor elements 32c, 32d constituting capacitor elements C1, C2.
　また、多層樹脂配線基板３０の表面（一方主面）には、表面実装部品を実装するための表面端子３０１が形成され、裏面（他方主面）には、高周波モジュール３を通信端末装置１のマザーボード等に接続するための裏面端子３０２が形成されている。また、各樹脂層３０ａ～３０ｈには、面内導体パターン３０３や層間導体パターン３０４（ビア導体）が設けられており、これらの導体パターン３０３，３０４により、各種の受動素子が形成されたり、多層樹脂配線基板３０に設けられた各種の電子部品が電気的に接続される。 Further, a front surface terminal 301 for mounting a surface mounting component is formed on the front surface (one main surface) of the multilayer resin wiring board 30, and the high frequency module 3 is connected to the back surface (the other main surface) of the communication terminal device 1. A back terminal 302 is formed for connection to a motherboard or the like. Each of the resin layers 30a to 30h is provided with an in-plane conductor pattern 303 and an interlayer conductor pattern 304 (via conductor). These conductor patterns 303 and 304 form various passive elements, Various electronic components provided on the resin wiring board 30 are electrically connected.
　そして、磁性体層３０ｅ～３０ｇには、厚み方向にらせん形状に形成された２個のコイルパターン３２ａ，３２ｂによりそれぞれ形成されたインダクタ素子Ｌ１，Ｌ２が設けられている。また、図６に示すように、両コイルパターン３２ａ，３２ｂは、層方向に隣接配置されており、磁界ＭＦが両コイルパターン３２ａ，３２ｂの巻回中心を貫くことにより相互インダクタンスＭで結合されている。 The magnetic layers 30e to 30g are provided with inductor elements L1 and L2 respectively formed by two coil patterns 32a and 32b formed in a spiral shape in the thickness direction. Further, as shown in FIG. 6, the two coil patterns 32a and 32b are arranged adjacent to each other in the layer direction, and the magnetic field MF is coupled with the mutual inductance M by passing through the winding centers of the two coil patterns 32a and 32b. Yes.
　なお、インダクタ素子Ｌ１は、磁性体層３０ｆ，３０ｇにそれぞれ形成されたコイルパターン３２ａが層間導体パターン３０４により接続されることによりらせん形状に形成され、インダクタ素子Ｌ２は、誘電体層３０ｄおよび磁性体層３０ｅにそれぞれ形成されたコイルパターン３２ｂが層間導体パターン３０４に接続されることによりらせん形状に形成されている。 The inductor element L1 is formed in a spiral shape by connecting the coil patterns 32a formed on the magnetic layers 30f and 30g with the interlayer conductor pattern 304, and the inductor element L2 includes the dielectric layer 30d and the magnetic body. The coil pattern 32b formed on each layer 30e is connected to the interlayer conductor pattern 304 to form a spiral shape.
　また、磁性体層３０ｅ～３０ｇの一方主面側である、多層樹脂配線基板３０の表面に設けられた表面端子３０１には、ＲＦＩＣ３１や、インダクタ素子Ｌ１，Ｌ２と共に整合回路３２を形成するキャパシタ素子Ｃ１，Ｃ２としてキャパシタ素子３２ｃ，３２ｄが設けられている。また、磁性体層３０ｅ～３０ｇの他方主面側の誘電体層３０ｂ，３０ｃには、セキュアＩＣ３３が内蔵されている。 Further, a capacitor element that forms the matching circuit 32 together with the RFIC 31 and the inductor elements L1 and L2 is provided on the surface terminal 301 provided on the surface of the multilayer resin wiring board 30 which is one main surface side of the magnetic layers 30e to 30g. Capacitor elements 32c and 32d are provided as C1 and C2. The secure IC 33 is built in the dielectric layers 30b and 30c on the other main surface side of the magnetic layers 30e to 30g.
　セキュアＩＣ３３は、ＳｉやＧａＡｓなどの半導体基板３３ａ上に設けられた集積回路に接続されたポスト電極３３ｂおよびポスト電極３３ｂの側面を覆って形成された樹脂封止層３３ｃを有する再配線層を備え、所謂、ＣＳＰ（チップサイズパッケージ）に形成されており、樹脂封止増３３ｃから露出するポスト電極３３ｂの端面と層間導体パターン３０４とが直接接続される。 The secure IC 33 includes a rewiring layer having a post electrode 33b connected to an integrated circuit provided on a semiconductor substrate 33a such as Si or GaAs, and a resin sealing layer 33c formed so as to cover a side surface of the post electrode 33b. It is formed in a so-called CSP (chip size package), and the end face of the post electrode 33b exposed from the resin sealing increase 33c and the interlayer conductor pattern 304 are directly connected.
　また、誘電体層３０ａ～３０ｄ，３０ｈは、ポリイミドや液晶ポリマなどの耐熱性を有する熱可塑性樹脂により形成され、磁性体層３０ｅ～３０ｇは、ポリイミドや液晶ポリマなどの熱可塑性樹脂にフェライト粉末等の磁性体粉末が混合されて形成される。また、表面端子３０１、裏面端子３０２、面内導体パターン３０３および層間導体パターン３０４は、銀や銅などを主成分とする比抵抗の小さな金属材料により形成される。なお、一般的な樹脂基板材料と比較すると、低損失で優れた高周波伝送特性を有しているため、液晶ポリマにより各樹脂層３０ａ～３０ｈを形成するとよい。 The dielectric layers 30a to 30d and 30h are made of a heat-resistant thermoplastic resin such as polyimide or liquid crystal polymer, and the magnetic layers 30e to 30g are made of thermoplastic resin such as polyimide or liquid crystal polymer with ferrite powder or the like. The magnetic powder is mixed to form. Further, the front surface terminal 301, the back surface terminal 302, the in-plane conductor pattern 303, and the interlayer conductor pattern 304 are formed of a metal material having a small specific resistance mainly composed of silver or copper. It should be noted that the resin layers 30a to 30h are preferably formed of a liquid crystal polymer because they have excellent high frequency transmission characteristics with low loss as compared with general resin substrate materials.
　次に、高周波モジュール３の製造方法について簡単に説明する。 Next, a method for manufacturing the high-frequency module 3 will be briefly described.
　まず、図５（ａ）～（ｈ）に示すように、スクリーン印刷やレーザ加工等を用いた周知の手法を用いて面内導体パターン３０３や層間導体パターン３０４が形成されることにより、各誘電体層３０ａ～３０ｄ，３０ｈおよび各磁性体層３０ｅ～３０ｇが準備される。そして、図４および図５（ｆ），（ｇ）に示すように、開口ＯＰを有する誘電体層３０ｂ，３０ｃが仮圧着されることにより形成されるキャビティに、樹脂封止層３３ｃから露出するポスト電極３３ｂの端面が上側を向くようにセキュアＩＣ３３が配置される。そして、他の樹脂層３０ａ，３０ｄ～３０ｈが図４に示す順に重ねられた後、熱圧着されることにより高周波モジュール３が製造される。 First, as shown in FIGS. 5A to 5H, the in-plane conductor pattern 303 and the interlayer conductor pattern 304 are formed by using a well-known method using screen printing, laser processing, etc. Body layers 30a-30d, 30h and magnetic layers 30e-30g are prepared. Then, as shown in FIGS. 4 and 5F, 5G, the dielectric layers 30b, 30c having the openings OP are exposed from the resin sealing layer 33c in the cavities formed by temporary pressure bonding. The secure IC 33 is arranged so that the end surface of the post electrode 33b faces upward. Then, after the other resin layers 30a, 30d to 30h are stacked in the order shown in FIG. 4, the high frequency module 3 is manufactured by thermocompression bonding.
　以上のように、この実施形態では、通信用のＲＦ信号をを取り扱う電子部品であるＲＦＩＣ３１は、多層樹脂基板３０が備える磁性体層３０ｅ～３０ｇの一方主面側に設けられ、他の電子部品であるセキュアＩＣ３３は、磁性体層３０ｅ～３０ｇの他方主面側に設けられているため、取り扱われる高周波信号に起因するＲＦＩＣ３１からの輻射ノイズ（電磁波）は磁性体層３０ｅ～３０ｇ（磁性体）を通過することにより発熱して損失するので、ＲＦＩＣ３１からの輻射ノイズが、セキュアＩＣ３３などの他の電子部品に与える影響を低減することができ、ＲＦＩＣ３１とセキュアＩＣ３３との間のアイソレーション特性を向上することができる。 As described above, in this embodiment, the RFIC 31, which is an electronic component that handles RF signals for communication, is provided on one main surface side of the magnetic layers 30e to 30g included in the multilayer resin substrate 30, and the other electronic components Since the secure IC 33 is provided on the other main surface side of the magnetic layers 30e to 30g, radiation noise (electromagnetic waves) from the RFIC 31 caused by a high-frequency signal to be handled is the magnetic layers 30e to 30g (magnetic material). Since heat is generated and lost by passing through, the influence of radiation noise from the RFIC 31 on other electronic components such as the secure IC 33 can be reduced, and the isolation characteristics between the RFIC 31 and the secure IC 33 are improved. can do.
　また、整合回路３２を形成する各インダクタ素子Ｌ１，Ｌ２が磁性体層３０ｅ～３０ｇに設けられており、インダクタ素子Ｌ１，Ｌ２の各インダクタンスが増大するためインダクタ素子Ｌ１，Ｌ２を小型化することができるので、高周波モジュール３の小型化を図ることができる。 Further, the inductor elements L1 and L2 forming the matching circuit 32 are provided in the magnetic layers 30e to 30g, and the inductances of the inductor elements L1 and L2 increase. Therefore, the inductor elements L1 and L2 can be downsized. Therefore, the high-frequency module 3 can be reduced in size.
　また、従来のように、電子部品の一面を隙間無く覆う形状に形成されたグランドパターンと、多層樹脂基板３０に設けられた各種の受動素子とが結合することにより、受動素子の特性が変化したり、当該受動素子により形成される回路のＱ値が劣化するなどの問題が生じるおそれがない。 In addition, the characteristic of the passive element is changed by combining the ground pattern formed in a shape that covers one surface of the electronic component without a gap and the various passive elements provided on the multilayer resin substrate 30 as in the past. There is no possibility that the Q value of a circuit formed by the passive element deteriorates.
　また、各磁性体層３０ｅ～３０ｇは、樹脂材料に磁性体粉末が混合されて形成されたものであるため、誘電体層３０ａ～３０ｄ，３０ｈと比較すると剛性が高く、多層樹脂配線基板３０の剛性を向上することができる。したがって、高周波モジュール３のたわみ強度を向上させることができると共に、多層樹脂配線基板３０に実装されるＲＦＩＣ３１や、内蔵されるセキュアＩＣ３３の機械的強度を補強することができる。 Further, since each of the magnetic layers 30e to 30g is formed by mixing a magnetic powder with a resin material, the rigidity is higher than that of the dielectric layers 30a to 30d and 30h, and the multilayer resin wiring board 30 has a higher rigidity. Stiffness can be improved. Therefore, the flexural strength of the high-frequency module 3 can be improved, and the mechanical strength of the RFIC 31 mounted on the multilayer resin wiring substrate 30 and the built-in secure IC 33 can be reinforced.
　また、ＲＦＩＣ３１とセキュアＩＣ３３との間に磁性体層３０ｅ～３０ｇが配置されているため、入力されたＲＦ信号がＲＦＩＣ３１により復調されたベースバンド信号を取り扱うセキュアＩＣ３３に、ＲＦ信号に起因するＲＦＩＣ３１からの輻射ノイズが影響を与えるのを防止することができる。 Further, since the magnetic layers 30e to 30g are arranged between the RFIC 31 and the secure IC 33, the RFIC 31 caused by the RF signal is transmitted to the secure IC 33 that handles the baseband signal obtained by demodulating the input RF signal by the RFIC 31. It is possible to prevent the radiation noise from affecting.
　また、セキュアＩＣ３３が多層樹脂配線基板３０に内蔵されるので、高周波モジュール３の小型化を図ることができる。 Further, since the secure IC 33 is built in the multilayer resin wiring board 30, the high-frequency module 3 can be reduced in size.
　また、両コイルパターン３２ａ，３２ｂが所定の相互インダクタンスＭで結合されて磁性体層３０ｅ～３０ｇに層方向に隣接配置されており、より少ない巻数でインダクタ素子Ｌ１，Ｌ２を形成できるので、インダクタ素子Ｌ１，Ｌ２を小型化できると共に、インダクタ素子Ｌ１，Ｌ２から放射される磁界ノイズを低減することができる。 Further, the coil patterns 32a and 32b are coupled with a predetermined mutual inductance M and are arranged adjacent to the magnetic layers 30e to 30g in the layer direction, so that the inductor elements L1 and L2 can be formed with a smaller number of turns. L1 and L2 can be reduced in size, and magnetic field noise radiated from the inductor elements L1 and L2 can be reduced.
　＜第２実施形態＞
　本発明の第２実施形態たる高周波モジュールが搭載された通信端末装置について、図７および図８を参照して説明する。図７は本発明の第２実施形態にかかる高周波モジュールを示す断面図である。図８は図７の高周波モジュールが備える配線基板に設けられたインダクタ素子の配置関係を示す図である。この実施形態が上記した第１実施形態と異なるのは、図７に示すように、磁性体層３０ｅ～３０ｇの一方主面側の多層樹脂配線基板３０表面の表面端子３０１ににセキュアＩＣ３３が設けられて、磁性体層３０ｅ～３０ｇの他方主面側の誘電体層３０ｂ，３０ｃにＲＦＩＣ３１が内蔵されている点である。また、コイルパターン３２ａ，３２ｂは、少なくとも互いのらせん形状の巻回軸が重ならないように磁性体層３０ｅ～３０ｇの面方向に隣接配置されて各インダクタ素子Ｌ１，Ｌ２が形成されている。そして、図８に示すように、磁性体層３０ｅ～３０ｇ内に、両コイルパターン３２ａ，３２ｂに生じる磁界ＭＦによる閉磁路が形成されるように、各インダクタ素子Ｌ１，Ｌ２が配置されている。その他の構成は上記した第１実施形態と同様の構成であるため、同一符号を付すことによりその構成の説明は省略する。 <Second Embodiment>
A communication terminal device on which a high-frequency module according to a second embodiment of the present invention is mounted will be described with reference to FIGS. FIG. 7 is a sectional view showing a high-frequency module according to the second embodiment of the present invention. FIG. 8 is a diagram showing an arrangement relationship of inductor elements provided on a wiring board provided in the high frequency module of FIG. This embodiment differs from the first embodiment described above in that a secure IC 33 is provided on the surface terminal 301 on the surface of the multilayer resin wiring board 30 on one main surface side of the magnetic layers 30e to 30g, as shown in FIG. Thus, the RFIC 31 is built in the dielectric layers 30b and 30c on the other main surface side of the magnetic layers 30e to 30g. In addition, the coil patterns 32a and 32b are arranged adjacent to each other in the plane direction of the magnetic layers 30e to 30g so that at least the spiral winding axes do not overlap with each other, and the inductor elements L1 and L2 are formed. As shown in FIG. 8, the inductor elements L1 and L2 are arranged in the magnetic layers 30e to 30g so as to form a closed magnetic path due to the magnetic field MF generated in the coil patterns 32a and 32b. Since other configurations are the same as those in the first embodiment, description of the configuration is omitted by giving the same reference numerals.
　この実施形態では、ＲＦＩＣ３１は、ＳｉやＧａＡｓなどの半導体基板３１ａ上に設けられた集積回路に接続されたポスト電極３１ｂおよびポスト電極３１ｂの側面を覆って形成された樹脂封止層３１ｃを有する再配線層を備え、所謂、ＣＳＰに形成されており、樹脂封止層３１ｃから露出するポスト電極３１ｂの端面と層間導体パターン３０４とが直接接続される。また、ＲＦＩＣ３１の半導体基板３１ａの集積回路形成面と反対側の面には、放熱用の層間導体パターン３０４ａが接続されており、ＲＦＩＣ３１の熱が多層樹脂基板３０の外部に放熱されるように構成されている。 In this embodiment, the RFIC 31 includes a post electrode 31b connected to an integrated circuit provided on a semiconductor substrate 31a such as Si or GaAs, and a resin sealing layer 31c formed so as to cover the side surface of the post electrode 31b. The wiring layer is provided and is formed in a so-called CSP, and the end face of the post electrode 31b exposed from the resin sealing layer 31c and the interlayer conductor pattern 304 are directly connected. Further, a heat dissipation interlayer conductor pattern 304a is connected to the surface of the RFIC 31 opposite to the integrated circuit formation surface of the semiconductor substrate 31a, and the heat of the RFIC 31 is radiated to the outside of the multilayer resin substrate 30. Has been.
　また、各磁性体層３０ｅ～３０ｇには、それぞれ面方向に隣接してコイルパターン３２ａ，３２ｂが形成されている。そして、各磁性体層３０ｅ～３０ｇに形成された各コイルパターン３２ａ，３２ｂが、それぞれ層間導体パターン３０４により接続されることにより、らせん形状のインダクタ素子Ｌ１，Ｌ２が形成されている。 In addition, coil patterns 32a and 32b are formed on the magnetic layers 30e to 30g so as to be adjacent to each other in the plane direction. The coil patterns 32a and 32b formed on the magnetic layers 30e to 30g are connected to each other by the interlayer conductor pattern 304, thereby forming spiral inductor elements L1 and L2.
　このように構成すると、上記した第１実施形態と同様の効果を奏することができると共に、以下の効果を奏することができる。すなわち、各インダクタ素子Ｌ１，Ｌ２を形成する両コイルパターン３２ａ，３２ｂが、少なくとも互いのらせん形状の巻回軸が重ならないように配置されて、磁性体層３０ｅ～３０ｇ内に両コイルパターン３２ａ，３２ｂに生じる磁界ＭＦによる閉磁路が形成されるので、インダクタ素子Ｌ１，Ｌ２から放射される磁界ノイズを低減することができる。 With this configuration, the same effects as those of the first embodiment described above can be achieved, and the following effects can be achieved. That is, the two coil patterns 32a and 32b forming the inductor elements L1 and L2 are arranged so that at least the spiral winding axes do not overlap with each other, and the two coil patterns 32a and 32b are formed in the magnetic layers 30e to 30g. Since the closed magnetic circuit is formed by the magnetic field MF generated in 32b, magnetic field noise radiated from the inductor elements L1 and L2 can be reduced.
　また、各インダクタ素子Ｌ１，Ｌ２と共に整合回路３２を形成する受動素子であるキャパシタ素子Ｃ１，Ｃ２（キャパシタ素子３２ｃ，３２ｄ）と、ＲＦＩＣ３１とが磁性体層３０ｅ～３０ｇを間に挟んで配置されているため、ＲＦ信号に起因するＲＦＩＣ３１からの輻射ノイズがキャパシタ素子Ｃ１，Ｃ２に影響を与えて整合回路３２の特性が変化するのを防止することができる。 Capacitor elements C1 and C2 ( capacitor elements 32c and 32d), which are passive elements that form the matching circuit 32 together with the inductor elements L1 and L2, and the RFIC 31 are arranged with the magnetic layers 30e to 30g interposed therebetween. Therefore, it is possible to prevent radiation noise from the RFIC 31 caused by the RF signal from affecting the capacitor elements C1 and C2 and changing the characteristics of the matching circuit 32.
　なお、本発明は上記した実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて、上記したもの以外に種々の変更を行なうことが可能である。例えば、上記した実施形態では、高周波モジュール３として、ＲＦＩＤシステムを構成するためのものを例に挙げて説明したが、本発明が適用される高周波モジュールとしてはこれに限られるものではない。 Note that the present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, the high-frequency module 3 is described as an example for configuring an RFID system, but the high-frequency module to which the present invention is applied is not limited thereto.
　また、ＲＦＩＣ３１およびセキュアＩＣ３３のいずれか一方が多層樹脂基板３０に必ずしも内蔵されている必要はなく、ＲＦＩＣ３１とセキュアＩＣ３３とが、磁性体層３０ｅ～３０ｇを挟んで配置されていればよい。また、配線基板を磁性体層のみで形成してもよく、この場合、磁性体層のいずれか一方面にＲＦＩＣ３１を配置し、他方面にセキュアＩＣ３３を配置すればよい。 Further, either one of the RFIC 31 and the secure IC 33 is not necessarily built in the multilayer resin substrate 30, and the RFIC 31 and the secure IC 33 may be arranged with the magnetic layers 30e to 30g interposed therebetween. Further, the wiring board may be formed of only the magnetic layer. In this case, the RFIC 31 may be disposed on one surface of the magnetic layer and the secure IC 33 may be disposed on the other surface.
　本発明は、配線基板に設けられた、高周波信号を取り扱う電子部品であるＲＦＩＣと、整合回路と、他の電子部品とを備える高周波モジュールに広く適用することができる。 The present invention can be widely applied to a high-frequency module that is provided on a wiring board and includes an RFIC that is an electronic component that handles high-frequency signals, a matching circuit, and other electronic components.
　３，３ａ　　高周波モジュール
　４　　アンテナ素子
　３０　　多層樹脂配線基板（配線基板）
　３０ｅ～３０ｇ　　磁性体層
　３１　　ＲＦＩＣ
　３２　　整合回路
　３３　　セキュアＩＣ（他の電子部品）
　Ｌ１，Ｌ２　　インダクタ素子
　Ｃ１，Ｃ２　　キャパシタ素子（受動素子） 3, 3a High-frequency module 4 Antenna element 30 Multi-layer resin wiring board (wiring board)
30e-30g Magnetic layer 31 RFIC
32 Matching circuit 33 Secure IC (Other electronic components)
L1, L2 Inductor element C1, C2 Capacitor element (passive element)

Claims (8)

  1. 　配線基板に設けられた、高周波信号を取り扱う電子部品であるＲＦＩＣと、整合回路と、他の電子部品とを備える高周波モジュールにおいて、
    　前記配線基板は磁性体層を備え、
    　前記ＲＦＩＣは、前記磁性体層の一方主面側に設けられ、前記他の電子部品は、前記磁性体層の他方主面側に設けられて、
    　前記整合回路を形成するインダクタ素子が前記磁性体層に設けられている
    　ことを特徴とする高周波モジュール。     In a high-frequency module provided with an RFIC, which is an electronic component that handles high-frequency signals, provided on a wiring board, a matching circuit, and other electronic components,
    The wiring board includes a magnetic layer,
    The RFIC is provided on one main surface side of the magnetic layer, and the other electronic component is provided on the other main surface side of the magnetic layer,
    An inductor element for forming the matching circuit is provided in the magnetic layer.
  2. 　前記ＲＦＩＣは、入力された前記高周波信号をベースバンド信号に復調し、前記ベースバンド信号を前記高周波信号に変調する機能を有し、
    　前記他の電子部品は、前記ベースバンド信号を取り扱うＩＣであることを特徴とする請求項１に記載の高周波モジュール。     The RFIC has a function of demodulating the input high-frequency signal into a baseband signal and modulating the baseband signal into the high-frequency signal,
    The high frequency module according to claim 1, wherein the other electronic component is an IC that handles the baseband signal.
  3. 　前記他の電子部品は、前記インダクタ素子と共に前記整合回路を形成する受動素子であることを特徴とする請求項１または２に記載の高周波モジュール。 3. The high-frequency module according to claim 1, wherein the other electronic component is a passive element that forms the matching circuit together with the inductor element.
  4. 　前記ＲＦＩＣおよび前記他の電子部品のいずれか一方が前記配線基板に内蔵されていることを特徴とする請求項１ないし３のいずれかに記載の高周波モジュール。 4. The high-frequency module according to claim 1, wherein any one of the RFIC and the other electronic components is built in the wiring board.
  5. 　前記インダクタ素子は、前記磁性体層の厚み方向にらせん状に形成された２個のコイルパターンを備え、
    　前記両コイルパターンは隣接配置されて所定の相互インダクタンスで結合していることを特徴とする請求項１ないし４のいずれかに記載の高周波モジュール。     The inductor element includes two coil patterns formed in a spiral shape in the thickness direction of the magnetic layer,
    5. The high frequency module according to claim 1, wherein the two coil patterns are arranged adjacent to each other and are coupled with each other with a predetermined mutual inductance.
  6. 　前記両コイルパターンは、少なくとも互いのらせん形状の巻回軸が重ならないように隣接配置されており、前記磁性体層内に前記両コイルパターンに生じる磁界による閉磁路が形成されることを特徴とする請求項１ないし５のいずれかに記載の高周波モジュール。 The two coil patterns are arranged adjacent to each other so that at least the spiral winding shafts do not overlap each other, and a closed magnetic circuit is formed in the magnetic layer by a magnetic field generated in the two coil patterns. The high-frequency module according to claim 1.
  7. 　前記整合回路および前記ＲＦＩＣが接続されており、
    　アンテナ素子から入力された前記高周波信号が前記整合回路を介して前記ＲＦＩＣに入力されること、および／または前記ＲＦＩＣから出力された高周波信号が前記整合回路を介してアンテナ素子から放射されることを特徴とする請求項１ないし６のいずれかに記載の高周波モジュール。     The matching circuit and the RFIC are connected;
    The high-frequency signal input from the antenna element is input to the RFIC through the matching circuit, and / or the high-frequency signal output from the RFIC is radiated from the antenna element through the matching circuit. The high-frequency module according to any one of claims 1 to 6, wherein
  8. 　前記ＲＦＩＣは、ＲＦＩＤ用ＩＣであることを特徴とする請求項１ないし７のいずれかに記載の高周波モジュール。 The high-frequency module according to any one of claims 1 to 7, wherein the RFIC is an IC for RFID.
PCT/JP2012/082612 2012-01-11 2012-12-17 High-frequency module WO2013105397A1 (en)

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