WO2013101571A1 - A method of manufacturing patterned x - ray optical elements - Google Patents
A method of manufacturing patterned x - ray optical elements Download PDFInfo
- Publication number
- WO2013101571A1 WO2013101571A1 PCT/US2012/070450 US2012070450W WO2013101571A1 WO 2013101571 A1 WO2013101571 A1 WO 2013101571A1 US 2012070450 W US2012070450 W US 2012070450W WO 2013101571 A1 WO2013101571 A1 WO 2013101571A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser beam
- substrate
- grooves
- pattern
- filling material
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000000463 material Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 230000004907 flux Effects 0.000 claims abstract description 26
- 230000015556 catabolic process Effects 0.000 claims abstract description 22
- 239000002105 nanoparticle Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 52
- 238000010521 absorption reaction Methods 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000002679 ablation Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 9
- 239000013590 bulk material Substances 0.000 description 9
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000000945 filler Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000939 field's metal Inorganic materials 0.000 description 1
- 229910000743 fusible alloy Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000003963 x-ray microscopy Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Definitions
- the present invention relates to the manufacture of patterned optical elements for use in the optical frequency range of x-rays.
- Patterned optical elements for x-ray wavelengths differ from typical optical gratings for ultraviolet (UV), visible (VIS), and infrared (IR) wavelength ranges. Processes for producing optical gratings in these longer wavelength ranges cannot be used for and transferred to the production of the patterned optics for the x-ray wavelength range because of differences in the working principles of the processes, in the materials of the optical elements, in the critical dimensions and geometries, and in other aspects.
- a patterned optic for x-rays changes an x- ray wavefront either by modifying the amplitude or phase or both.
- the patterned optical element does so through spatial modulation of the electron density of the structure. It is often made of a pattern of varying transmission thickness, or a pattern of different materials, or a combination of both.
- One of the simplest patterned optics is a transmission grating.
- One type of x-ray transmission gratings has a structure of stripes of alternative materials with different electron densities and hence different absorption coefficients and different optical indexes. The intensity and the phase of transmission x-rays are therefore modulated by this structure.
- An x-ray transmission grating can be made of one material as well.
- the grating may have an alternating thickness of the material so that the intensity and the phase are modulated through the transmission.
- the aspect ratio i.e. the ratio between the characteristic period and the thickness of the x-ray transmission path is a universal parameter for patterned x-ray optics.
- a Fresnel lens is a zone plate with concentric rings of different optical paths. The transmitted x-rays constructively interfere with each other at the focal point.
- the typical dimension of the "ring width” ranges from tens of micrometers to a few tens of nanometers in the x-ray region with energy of a few keV to a few 10 keV.
- the resolution of a Fresnel lens is determined by the outmost ring, i.e. the ring with the narrowest ring width, by 1 .22 AR n , where AR n is the width of the outmost ring.
- a resolution chart is a pattern with variable density.
- the pattern may include numbers and letters of different sizes, lines of different widths and at different distances, and other different geometric patterns.
- the shadow image, or absorption contrast image shows the imaging resolution of the system.
- Resolution charts are widely used for characterizing the resolution of x-ray detectors and x-ray imaging systems.
- Electron-beam lithography (e-beam lithography) has been used to fabricate these x-ray optics, in which a periodic pattern is engraved by a focused e-beam on a thin film of absorbing material.
- e-beam lithography Electron-beam lithography
- Fresnel lenses and gratings fabricated for relatively high energy, such as 8 keV and above, the required aspect ratio is too large for e-beam lithography.
- the present invention provides an improved method of fabricating pattered x-ray optical elements.
- This method addresses issues associated with the fabrication of an optical element for producing intensity and phase modulation to an x-ray wave front.
- Such optical elements usually have patterned density modulation structure.
- the method includes utilizing a pulsed laser beam to engrave a pattern on a base plate of material which is generally transparent or less absorbing to x-rays (low-density), and then filling the grooves of the pattern with material which is less transparent to x-rays (high-density).
- the density modulation using a pattern of grooves filled with high-density material in the less absorbing base plate forms the basic structure of various optical elements.
- the shape of the pattern depends on the final application.
- the grooves may be, for example, parallel straight lines or concentric circles or take any other periodical pattern.
- These optical elements may include x-ray resolution charts for system characterization, zone plates for x-ray microscopy, and x-ray transmission gratings suitable for x-ray interferometry and for phase-enhanced
- the method involves using a focused femtosecond laser beam to engrave a patterned structure on a substrate of material relatively transparent to the fundamental wavelength of the laser.
- the fundamental wavelength is the main wavelength of the laser that may also be accompanied by harmonics of shorter wavelengths.
- the term "wavelength" refers to the fundamental wavelength of the laser, unless otherwise noted.
- the method according to the invention involves several ways of filling the engraved microscopical structure with a different material.
- the density contrast between the base material and the filler material forms a density modulated pattern.
- the contrast of optical index between the base material and the filler material allows phase modulation to an x-ray wavefront.
- Fig. 1 illustrates an ablation of bulk material to machine a grating structure downward from the top of a substrate
- Fig. 2 illustrates a laser ablation through material break-down upward from the bottom of the substrate
- Fig. 3 shows a graph illustrating a material break-down power across a diameter smaller than the laser diffraction limit
- Fig. 4 illustrates laser machining of x-ray grating structures smaller than the diffraction limit
- Fig. 5 is an illustration of process steps to fill the grating structure with liquid material.
- the system 10 includes a source 12 generating a laser beam 16.
- the laser beam 16 generated by the source 12 passes an optical focusing arrangement 14 with a focal length FL.
- the laser beam may have a wavelength of a few hundred nanometers up to several micrometers, more specifically between 500 nm and 1 .5 ⁇ .
- the laser beam 16 has a waist 26, at which it reaches its smallest diameter and its highest flux density.
- the cross-section of the beam waist 26 is called focal spot, where the laser beam 16 has the highest power per area.
- the flux density of the laser beam 16 across the focal spot at its waist 26 exceeds a break-down threshold specific to the material of substrate 18. Material removal occurs across the focal spot at the location of the waist 26. Where the laser beam 16 has a wider diameter, the flux density of laser beam 16 remains below the break-down threshold of the material of substrate 18. Accordingly, the energy absorption of the material remote from the beam waist 26 is insufficient to cause ablation, and the material of substrate 18 remains intact.
- the focal arrangement 14 needs to have a high numerical aperture (N.A.) to achieve this. Additionally, a water-immersed microscope objective can provide a N.A. of 1 .2 or even higher.
- the substrate material can be transparent material such as glass, glass ceramics, crystal quartz, sapphire and other materials.
- the material may also be non-transparent such as silicon, and other dielectric materials with a low atomic numbers.
- the position of waist 26 of the laser beam 16 in transversal direction Z in Fig. 1 determines the depth in the substrate 18 at which the material break-down occurs. And the diameter of the laser beam 16 at its waist 26 determines the width of the material break-down.
- the laser beam source 12 is turned on with the focusing arrangement 14 having a distance from the substrate 18 that is substantially equal to the focal length FL. Accordingly, the laser beam 16 starts the ablation process at a proximate surface of the substrate 18, also called the first surface. Subsequently, the focusing arrangement 14 is moved closer to the substrate 18 in a controlled manner to ablate material at greater depths until the desired depth of grooves 20 is reached.
- the material of substrate 18 may be partially transparent to the laser beam wavelength. It must, however absorb the laser beam wavelength to a degree that results in a localized ablation of the substrate material in the area of the beam waist 26.
- the laser beam 16 is an ultra-short pulse laser beam that creates the required pattern of grooves 20 in the substrate 18 contained in the patterned optics.
- a typical laser for this process has a pulse length of 100 femtoseconds and consists of a regenerative amplifier with a laser center wavelength of approximately 800 nm.
- the beam is transversally monomode and has a beam propagation parameter of M 2 of ⁇ 1 .
- the pulse energy is typically in the range of several 10 nJ to several 100 nJ or higher in the Micro-Joule range. Due to the short pulse length, there is no significant heat transfer to the residual bulk material of substrate 18 so that a sharp boundary between removed material and still intact material is attainable.
- the laser beam energy is absorbed by the bulk material.
- the bulk material is ablated and leaves a pattern of grooves 20 with clean and precise edges.
- the laser beam 16 can engrave structures with high aspect ratios and grooves 20 having a width that may be smaller than the diffraction limit of the wavelength of the laser beam source 12 as described in more detail in connection with Figs. 3 and 4.
- the ultra-short pulsed laser beam 16 can be used in combination with a stage or handling platform 15.
- the laser beam 16 can be scanned relative to the handling platform 15 to ablate material in the pattern of the grooves 20.
- the voids of the patterned substrate 18 formed by the laser beam 16 are filled with a different element, typically having a high electron density, or a mix of heavy elements to form the patterned structure of substrate 18 which can be used for the modulation of an x-ray wave front.
- the smallest achievable structure width of the patterned optic to be produced is given by the diffraction limit of the laser at the given laser wavelength and single transversal mode operation.
- Normal operating conditions exist where the flux density of the laser beam 16 anywhere across its defined diameter specifications on the substrate 18 interface exceeds the break-down threshold specific to the material of substrate 18. Material removal occurs across that diameter. Due to the short pulse length, there is no significant heat transfer to the residual bulk material of substrate 18 outside the diameter of laser beam 16 so that there is virtually no heat-affected zone and the boundary between removed material and intact material remains very well defined.
- a substrate 18A is sufficiently transparent to the laser beam wavelength, a configuration as shown in Fig. 2 is possible, in which the material is removed below the surface of substrate 18A.
- the material of substrate 18A must be partially transparent to the laser beam wavelength so that the laser beam 16 can penetrate the material without causing damage. Non-linear effects, such as multi-photon absorption, may contribute to strong laser beam absorption in the focal plane, where the flux density may be high enough for these effects to occur.
- the material must absorb the laser beam locally to a degree sufficient to cause ablation.
- the beam source 12 may be used in a way that the beam 16 is transmitted through the substrate 18A and brought to a focus in the path of the designed pattern as shown in Fig. 2. Material is ablated along the path. The relative movement between the laser beam 16 and the substrate 18A and the depth of the ablated material forms the patterned structure in substrate 18A.
- Fig. 2 shows two grooves 30 and 40 currently being created at different stages of the engraving process.
- the laser beam 16 generated by the source 12 passes the optical focusing arrangement 14 with the focal length FL.
- the laser beam 16 has its waist 26, where its flux density is sufficient to exceed the break-down threshold of the material of substrate 18A resulting in ablation of the material at the location of the waist 26.
- the flux density of laser beam 16 remains below the break-down threshold of the material of substrate 18A, where the energy absorption of the material is insufficient to cause ablation and the material of substrate 18A remains intact.
- the laser focal spot position i.e. the waist 26 of the laser beam 16 in transversal direction Z in Fig.
- the laser beam source 12 is turned on when the laser beam waist 26 is at or near a remote surface (second surface) of substrate 18A to begin the engraving process.
- the laser beam 16 ablates the bulk material near its waist 26, resulting in groove 30.
- the minimum of the width of the groove is limited by the diffraction limit for a given laser and focal arrangement. This is typically in the range of 1 micrometer or as small as approximately 0.5 micrometers when using a high numerical aperture immersion objective as the focusing arrangement 14.
- the focusing arrangement is retracted from the second surface in a controlled manner, causing material at greater depths to be ablated until the groove 30 obtains the depth of groove 40.
- the depth of the groove is only limited by the working distance of the focal arrangement 14 that is used for the process.
- the width of the grooves 20 can be smaller than a conventionally predicted minimum focus spot of the same dimension as the laser beam waist 26 for a certain wavelength and single transversal mode, or close to the latter.
- the diagram of Fig. 3 shows the laser flux distribution P over the radius r of the laser beam 16.
- the material to be ablated has a specific break-down threshold 28 of the laser beam flux density (flux per area) for a given wavelength of the laser beam 16. Above the threshold 28, nonlinear effects occur that enable the deposition of the laser pulse energy into the substrate material, causing material breakdown. While linear absorption is observed at specific wavelengths, non-linear absorption mostly depends on the overall flux density of the laser beam 16 and is largely independent of the wavelength of the laser beam 16.
- Suitable pulse lengths are no longer than 10 ps for non-linear absorption, much shorter than for purely linear absorption.
- the reason for the short pulse length for non-linear absorption is that the cumulative absorption of a laser pulse might otherwise lead to an undesired excessive material breakdown.
- the laser pulse parameters are calibrated precisely to achieve a flux density sufficient to exceed the break-down threshold 28 of the substrate material only in an area 27 significantly smaller than the waist 26 of the focused laser beam profile.
- This area 27 is typically the center area of the laser beam 16 with an overall flux distribution shown by curve 22 having a shape similar or equal to a Gaussian distribution.
- the laser scan or the ablation of the material, has to be three-dimensional.
- One approach is scan the laser beam 16 in two dimensions to achieve the pattern with the depth of the structure determined by the laser volume above the break-down threshold. Then the laser beam 16 is repositioned perpendicular to the surface of the substrate 18, and the two-dimensional scan is repeated. Multiple iterations may be needed to achieve the desired aspect ratio.
- the laser focus position is chosen to create material break-down in the vicinity of a substrate surface to enable a controlled expansion of the removal material which creates a high local pressure. This may be at the first surface of substrate 18 in Fig. 1 or at the second surface of substrate 18A shown in Fig. 2 or in Fig. 4 as explained below.
- Fig. 4 shows the two grooves 30 and 40 being created at different stages of the engraving process.
- the laser beam 16 generated by the source 12 passes the optical focusing arrangement 14 with the focal length FL.
- the laser beam 16 reaches its waist 26, at which it has its smallest diameter and its highest flux density. But only the center of the laser beam waist 26 exhibits a flux density sufficient to exceed the break-down threshold 28.
- the width of groove 30 corresponds to the width of region 27 of Fig. 3.
- the position of waist 26 of the laser beam 16 in transversal direction Z determines the depth in the substrate 18A at which the material break-down occurs.
- the laser beam source 12 starts the engraving process at or near the second surface of substrate 18A.
- the laser beam 16 ablates the bulk material near its waist 26 across diameter 27, resulting in groove 30.
- the focusing arrangement is moved away from the second surface, causing material at greater depths to be ablated until the groove obtains the depth of groove 40.
- Additional techniques such as super-resolving apertures can be used in the optical setup to reduce the center area of the beam.
- the bulk structure of substrate 18A may be immersed in liquid 29 to control the process better.
- a typical liquid is water, water with a surfactant to increase wetting, alcohol, or another solvent with good wetting properties to penetrate into the small ablated features and others.
- the liquid 29 damps an expansion of the removed material and thus enhances the controllability of the process.
- the liquid also works in conjunction with an immersion objective used as the focusing arrangement 14.
- the finished machined patterned substrate 18 of Fig. 1 or 18A of Fig. 2 or Fig. 4 now represents a base plate of an x-ray patterned optics, such as a grating, made of one material, typically with low electron density.
- the next step involves filling the grooves 20 of the patterned structure with a filling material 24, typically consisting of a heavy element or a mix of heavy elements.
- a filling material 24 typically consisting of a heavy element or a mix of heavy elements.
- the term "heavy element” in this context designates an element with a high electron density, for instance a metal. The choice of one or more elements depends on the desired x-ray absorption, phase change, and the physical properties of the materials.
- Some examples include metals, preferably, with a high atomic z-number and with low surface tension and a low melting point such as tin and low melting metal alloys such as Field's metal (32.5% Bismuth, 16.5% Tin, and 51 .0% Indium) with a very low melting point of 149°F or an alloy of 5 parts Bismuth, 3 parts Tin with a melting point of 202°F.
- the physical properties determine the process of filling the grooves 20. Because the characteristic width of the patterned structure of substrate 18 (or 18A) is very small, it is difficult to achieve a wetting of the grating surface by a liquid filling material and to make the filling material penetrate the grooves 20.
- Figs. 5a through 5d illustrate the further process of manufacturing an x-ray grating with spatial density modulation by filling the grooves 20 with a liquid or deformable filling material 24.
- the process starts according to Fig. 5a with evacuating the volume around substrate 18 and applying the high-density material 24 in a liquid or deformable state on top of the grating structure of substrate 18 while under vacuum.
- pneumatic pressure is applied in the chamber around the patterned structure of substrate 18 and, in particular, on top of the deformable filling material 24.
- This pneumatic pressure may be atmospheric air pressure.
- the pneumatic pressure forces the melted metal filling material 24 into the grooves 20. Potential inclusions are minimized due to the initial operation in a vacuum.
- the elements for filling material 24 with low melting point and low viscosity and low surface tension are preferred. Different elements may be mixed to provide a mixture having low melting temperature or low viscosity or low surface tension, or any combination of these properties to facilitate injecting the mixture into the voids of grooves 20 of the patterned structure in substrate 18.
- the residual filling material 24 is removed from the top surface of the substrate 18 or 18A as shown in Fig. 5c, and the excess bulk material of substrate 18 or 18A is removed from the bottom to expose the final patterned structure alternating between the material of substrate 18 or 18A and the filling material 24, as shown in Fig. 5d.
- the alternating materials provide for an enhanced contrast because only one material is present across the thickness of the structure at any given location.
- the final thickness of the structure is individually chosen to optimize its optical properties for a given application.
- the finished structure as shown in Fig. 5d may be an optical element, such as a Fresnel lens, a zone plate, a resolution chart, or a grating.
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Laser Beam Processing (AREA)
- Measurement Of Radiation (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2861582A CA2861582A1 (en) | 2011-12-27 | 2012-12-19 | A method of manufacturing patterned x-ray optical elements |
EP12819158.2A EP2798646A1 (en) | 2011-12-27 | 2012-12-19 | A method of manufacturing patterned x - ray optical elements |
JP2014550341A JP2015510581A (en) | 2011-12-27 | 2012-12-19 | Method for producing patterned X-ray optical element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/337,654 US20130164457A1 (en) | 2011-12-27 | 2011-12-27 | Method of manufacturing patterned x-ray optical elements |
US13/337,654 | 2011-12-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013101571A1 true WO2013101571A1 (en) | 2013-07-04 |
Family
ID=47628424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2012/070450 WO2013101571A1 (en) | 2011-12-27 | 2012-12-19 | A method of manufacturing patterned x - ray optical elements |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130164457A1 (en) |
EP (1) | EP2798646A1 (en) |
JP (1) | JP2015510581A (en) |
CA (1) | CA2861582A1 (en) |
WO (1) | WO2013101571A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9424503B2 (en) * | 2014-08-11 | 2016-08-23 | Brian Kieser | Structurally encoded component and method of manufacturing structurally encoded component |
US9506871B1 (en) | 2014-05-25 | 2016-11-29 | Kla-Tencor Corporation | Pulsed laser induced plasma light source |
DE102015210286A1 (en) | 2015-06-03 | 2016-12-08 | 3D-Micromac Ag | Method and device for producing a structured element and structured element |
CN109688930A (en) | 2016-09-08 | 2019-04-26 | 皇家飞利浦有限公司 | Source grating for x-ray imaging |
EP3646347A4 (en) * | 2017-06-30 | 2021-03-31 | Scint-X AB | Filling micromechanical structures with x-ray absorbing material |
EP3534376A1 (en) * | 2018-02-28 | 2019-09-04 | Siemens Healthcare GmbH | Method for producing a microstructure component, microstructure component and xray device |
JP2020030232A (en) * | 2018-08-20 | 2020-02-27 | ウシオ電機株式会社 | Method for manufacturing fine hole optical element and optical device |
CN111945115A (en) * | 2019-05-17 | 2020-11-17 | 常州星宇车灯股份有限公司 | Method for processing surface film of car lamp part |
CN113345619B (en) * | 2021-06-16 | 2022-07-12 | 中国工程物理研究院激光聚变研究中心 | One-dimensional X-ray refraction blazed zone plate |
CN113707357B (en) * | 2021-07-08 | 2024-05-17 | 湖南大学 | Preparation method of high-aspect-ratio zone plate |
CN116047642B (en) * | 2023-04-03 | 2023-08-11 | 南昌虚拟现实研究院股份有限公司 | Preparation method of holographic volume grating and holographic volume grating |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB662046A (en) * | 1948-11-25 | 1951-11-28 | Roger Andre Delhumeau | Improvements in screens for absorbing secondary radiation in x-ray apparatus |
JP2001188096A (en) * | 1999-12-28 | 2001-07-10 | Shimadzu Corp | Method for manufacturing radiation detector of two- dimensional array type and x-ray shield wall |
US6987836B2 (en) * | 2001-02-01 | 2006-01-17 | Creatv Microtech, Inc. | Anti-scatter grids and collimator designs, and their motion, fabrication and assembly |
WO2010146498A1 (en) * | 2009-06-16 | 2010-12-23 | Koninklijke Philips Electronics N. V. | Tilted gratings and method for production of tilted gratings |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6277740B1 (en) * | 1998-08-14 | 2001-08-21 | Avery N. Goldstein | Integrated circuit trenched features and method of producing same |
IL152675A0 (en) * | 2002-11-06 | 2004-08-31 | Integrated simulation fabrication and characterization of micro and nanooptical elements | |
US20050064137A1 (en) * | 2003-01-29 | 2005-03-24 | Hunt Alan J. | Method for forming nanoscale features and structures produced thereby |
US6858372B2 (en) * | 2003-03-24 | 2005-02-22 | The United States Of America As Represented By The Secretary Of The Navy | Resist composition with enhanced X-ray and electron sensitivity |
US6990285B2 (en) * | 2003-07-31 | 2006-01-24 | Corning Incorporated | Method of making at least one hole in a transparent body and devices made by this method |
US7486705B2 (en) * | 2004-03-31 | 2009-02-03 | Imra America, Inc. | Femtosecond laser processing system with process parameters, controls and feedback |
GB0506895D0 (en) * | 2005-04-05 | 2005-05-11 | Plastic Logic Ltd | Ablation threshold adjustment by electroless plating |
WO2006115114A1 (en) * | 2005-04-20 | 2006-11-02 | Kyoto Institute Of Technology | Fresnel zone plate and x-ray microscope using the fresnel zone plate |
US9138913B2 (en) * | 2005-09-08 | 2015-09-22 | Imra America, Inc. | Transparent material processing with an ultrashort pulse laser |
KR100687654B1 (en) * | 2005-11-23 | 2007-03-09 | 정원정밀공업 주식회사 | A digital x-ray detector module and the manufacturing method thereof |
KR101414867B1 (en) * | 2006-06-26 | 2014-07-03 | 오르보테크 엘티디. | Alignment of printed circuit board targets |
FR2903032B1 (en) * | 2006-06-29 | 2008-10-17 | Ecole Polytechnique Etablissem | "METHOD AND DEVICE FOR MACHINING A TARGET BY FEMTOSECOND LASER BEAM." |
-
2011
- 2011-12-27 US US13/337,654 patent/US20130164457A1/en not_active Abandoned
-
2012
- 2012-12-19 EP EP12819158.2A patent/EP2798646A1/en not_active Ceased
- 2012-12-19 WO PCT/US2012/070450 patent/WO2013101571A1/en active Application Filing
- 2012-12-19 JP JP2014550341A patent/JP2015510581A/en active Pending
- 2012-12-19 CA CA2861582A patent/CA2861582A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB662046A (en) * | 1948-11-25 | 1951-11-28 | Roger Andre Delhumeau | Improvements in screens for absorbing secondary radiation in x-ray apparatus |
JP2001188096A (en) * | 1999-12-28 | 2001-07-10 | Shimadzu Corp | Method for manufacturing radiation detector of two- dimensional array type and x-ray shield wall |
US6987836B2 (en) * | 2001-02-01 | 2006-01-17 | Creatv Microtech, Inc. | Anti-scatter grids and collimator designs, and their motion, fabrication and assembly |
WO2010146498A1 (en) * | 2009-06-16 | 2010-12-23 | Koninklijke Philips Electronics N. V. | Tilted gratings and method for production of tilted gratings |
Non-Patent Citations (8)
Title |
---|
BEN PECHOLT ET AL: "Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication", THE INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY, SPRINGER, BERLIN, DE, vol. 39, no. 3-4, 15 September 2007 (2007-09-15), pages 239 - 250, XP019652012, ISSN: 1433-3015 * |
D.J. HWANG ET AL: "Liquid-assisted femtosecond laser drilling of straight and three-dimensional microchannels in glass", APPLIED PHYSICS A, vol. 79, no. 3, 1 August 2004 (2004-08-01), pages 605 - 612, XP055057547, ISSN: 0947-8396, DOI: 10.1007/s00339-004-2547-8 * |
DAWN N. VITEK ET AL: "Temporally focused femtosecond laser pulses for low numerical aperture micromachining through optically transparent materials", OPTICS EXPRESS, VOL 18, NO.17, 6 August 2010 (2010-08-06), pages 18086 - 18094, XP055057478, Retrieved from the Internet <URL:http://www.opticsinfobase.org/DirectPDFAccess/AEF3F22E-9FBF-A0EF-B05870B28EC7A419_204940/oe-18-17-18086.pdf?da=1&id=204940&seq=0&mobile=no> [retrieved on 20130322] * |
JUN REN ET AL: "Laser ablation of silicon in water with nanosecond and femtosecond pulses", OPTICS LETTERS, VOL.30, NO.13, 1 July 2005 (2005-07-01), XP055057436, Retrieved from the Internet <URL:http://www.opticsinfobase.org/DirectPDFAccess/AAD55BF6-E900-A777-357355DFDDA5DB2E_84501/ol-30-13-1740.pdf?da=1&id=84501&seq=0&mobile=no> [retrieved on 20130322] * |
KARSTEN KÖNIG, IRIS RIEMANN, HERBERT SCHUCK, DANIEL SAUER, THOMAS VELTEN, RONAN LE HARZIC: "Time-resolved and spectrally-resolved 5D multiphoton microscopy for analysis and nanoprocessing of materials", PROC. OF SPIE, vol. 5713, 12 April 2005 (2005-04-12), XP040200069 * |
STERN M B: "Pattern transfer for diffractive and refractive microoptics", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 34, no. 3-4, 1 December 1997 (1997-12-01), pages 299 - 319, XP004108295, ISSN: 0167-9317, DOI: 10.1016/S0167-9317(97)00183-4 * |
THOMAS KLOTZBUECHER ET AL: "<title>Custom specific fabrication of integrated optical devices by excimer laser ablation of polymers</title>", PROCEEDINGS OF SPIE, vol. 3933, 7 June 2000 (2000-06-07), pages 290 - 298, XP055057578, ISSN: 0277-786X, DOI: 10.1117/12.387565 * |
YONGZHI CAO, YANSHEN WANG,SHEN DONG,YANQIANG YANG,YINGCHUN LIANG,TAO SUN: "Residual Stress around Femtosecond Laser Ablated Grooves in Silicon Wafer Evaluated by Nanoindentation", SPIE, PO BOX 10 BELLINGHAM WA 98227-0010 USA, vol. 6742, 2007, XP040246127 * |
Also Published As
Publication number | Publication date |
---|---|
US20130164457A1 (en) | 2013-06-27 |
JP2015510581A (en) | 2015-04-09 |
EP2798646A1 (en) | 2014-11-05 |
CA2861582A1 (en) | 2013-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20130164457A1 (en) | Method of manufacturing patterned x-ray optical elements | |
Lei et al. | Ultrafast laser applications in manufacturing processes: A state-of-the-art review | |
US20210053160A1 (en) | Method and System for Ultrafast Laser-based Material Removal, Figuring and Polishing | |
US7482052B2 (en) | Method for processing by laser, apparatus for processing by laser, and three-dimensional structure | |
Račiukaitis et al. | Laser Processing by Using Diffractive Optical Laser Beam Shaping Technique. | |
KR20160048856A (en) | Method of Separating a Glass Sheet from a Carrier | |
TW201713447A (en) | Laser surface preparation of coated substrate | |
EP3776020B1 (en) | System and method for ablation assisted nanostructure formation for graded index surfaces for optics | |
US20150301444A1 (en) | Systems and methods for dry processing fabrication of binary masks with arbitrary shapes for ultra-violet laser micromachining | |
Menapace et al. | MRF applications: on the road to making large-aperture ultraviolet laser resistant continuous phase plates for high-power lasers | |
JP2009541065A (en) | Method and apparatus for processing a target using a femtosecond laser beam | |
KR20150121340A (en) | Laser machining method for film depth control using beam-shaping and pulse-count adjusting | |
Mingareev et al. | Ultrafast laser deposition of powder materials on glass | |
Schwarz et al. | Influence of pulse duration on high-precision manufacturing of 3D geometries | |
JP6348051B2 (en) | Laser processing method, laser processing apparatus, and laser processed product | |
Holmes et al. | Advanced laser micromachining processes for MEMS and optical applications | |
Zhou et al. | Enhanced photonic nanojets for submicron patterning | |
Won et al. | Laser drilling of stainless steel foil with reduced sidelobe ablation using a spatially filtered Bessel–Gauss beam | |
TWI598173B (en) | Laser de-flash method, laser processing method, and laser processing apparatus | |
Ito et al. | Nonlinear micro-processing of silicon by ultrafast fiber laser at 1552 nm | |
JP6887641B2 (en) | Glass slicing method | |
Ostendorf et al. | Nanostructuring of solids with femtosecond laser pulses (Keynote Address) | |
Varapnickas et al. | 3D Subtractive/Additive Printing with Ultrashort Laser Pulses: A Matured Technology | |
Zakaria | Surface Modification of Polymer Materials Induced by Laser Irradiation | |
Dabu et al. | Materials micro-processing using femtosecond lasers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12819158 Country of ref document: EP Kind code of ref document: A1 |
|
DPE2 | Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101) | ||
REEP | Request for entry into the european phase |
Ref document number: 2012819158 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012819158 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2861582 Country of ref document: CA |
|
ENP | Entry into the national phase |
Ref document number: 2014550341 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |