WO2013098951A1 - Dispositif à diodes électroluminescentes organiques et son procédé de fabrication - Google Patents

Dispositif à diodes électroluminescentes organiques et son procédé de fabrication Download PDF

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Publication number
WO2013098951A1
WO2013098951A1 PCT/JP2011/080251 JP2011080251W WO2013098951A1 WO 2013098951 A1 WO2013098951 A1 WO 2013098951A1 JP 2011080251 W JP2011080251 W JP 2011080251W WO 2013098951 A1 WO2013098951 A1 WO 2013098951A1
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WO
WIPO (PCT)
Prior art keywords
layer
organic
electrode
fuse
protective
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Application number
PCT/JP2011/080251
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English (en)
Japanese (ja)
Inventor
吉田　綾子
石塚　真一
宮口　敏
拓男 篠原
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パイオニア株式会社
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Priority to PCT/JP2011/080251 priority Critical patent/WO2013098951A1/fr
Publication of WO2013098951A1 publication Critical patent/WO2013098951A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/341—Short-circuit prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861—Repairing

Definitions

  • the present invention relates to an organic electroluminescence device and a manufacturing method thereof.
  • An organic electroluminescence device (hereinafter referred to as an organic EL device or an organic EL element) is a self-luminous surface emitting device, which has high visibility, can be driven at a low voltage, and has a broad emission spectrum. Research on practical application to lighting and lighting applications is actively conducted.
  • the organic EL device is configured, for example, by sequentially laminating a first electrode (anode), a hole transport layer, a light emitting layer, an electron transport layer, and a second electrode (cathode) on a glass substrate.
  • An organic EL device is a device that obtains electroluminescence by current injection, and requires a larger current to flow than an electric field device such as a liquid crystal display.
  • the layer thickness of the organic functional layer provided between the anode and the cathode is on the order of submicron, current leakage may occur due to minute dust or defects in the organic functional layer.
  • the peripheral cell may be damaged.
  • Patent Document 1 discloses that each of a plurality of pixels is provided with an electrode having a disconnection function that leads to disconnection due to an overcurrent at the time of a short circuit. A technique for blocking is described.
  • Patent Document 2 describes a technique for blocking or reducing the current flowing into the pixel electrode by increasing the resistance of at least a part of the pixel electrode when a certain current or more flows in the pixel electrode.
  • Patent Document 3 before sealing an organic EL element, a leak point is obtained by energizing between the first electrode layer and the second electrode layer of the organic EL element in an atmosphere not containing oxygen and moisture. A method of rupturing the second electrode layer is shown.
  • Patent Document 4 in the organic light emitting device, a through hole having a diameter substantially the same as that of the conductive foreign matter is formed at a position corresponding to the conductive foreign matter mixed in the organic light emitting layer in the anode.
  • a method is described that is processed so as to recede to the outside of the through-hole and suppresses the occurrence of light emission defects due to current leakage and short-circuiting caused by conductive foreign matter.
  • An organic EL device has a sealing structure because it rapidly deteriorates due to oxygen or moisture.
  • a hollow sealing structure such as a sealing can is common.
  • a sealing structure in which sealing is performed with a plate material such as a glass plate or a thin film made of an inorganic material such as SiO 2 or SiN x covers the entire organic EL element and seals it.
  • a sealing structure to stop.
  • Such a structure in which sealing is performed with a plate material or a thin film that is in close contact with the components of the device is referred to as a solid sealing structure.
  • the present invention has been made in view of the above points, and in an organic electroluminescence device including a wiring having a disconnection function that leads to disconnection when an overcurrent flows, the disconnection is appropriately disconnected by overcurrent. It is an object of the present invention to provide an organic electroluminescence device that can be reached and that can prevent damage to a sealing layer due to heat and impact caused by disconnection of wiring, and a method for manufacturing the same.
  • the organic electroluminescence device of the present invention includes a substrate, a first electrode layer provided on the substrate, an organic functional layer including an organic material provided on the first electrode layer, and the organic function A second electrode layer provided on the layer, a connection wiring provided on the substrate and connected to the first electrode layer or the second electrode layer, and the first and second electrodes
  • a sealing layer that covers the laminated structure including the layer, the organic functional layer, and the connection wiring, and the connection wiring has a fuse portion that is broken due to overcurrent, and the sealing layer includes the sealing layer, A second protection part that covers the fuse part and a second protection part that covers other than the fuse part, and the second impact of the first protection part when the fuse part is disconnected; Has a shock propagation prevention structure that prevents propagation to the protective part It is characterized by a door.
  • the manufacturing method of the organic electroluminescent device of the present invention includes a step of forming a first electrode layer on a substrate, a step of forming an organic functional layer containing an organic material on the first electrode layer, A step of forming a second electrode layer on the organic functional layer, and a connection having a fuse portion connected to the first electrode layer or the second electrode layer on the substrate and being disconnected by an overcurrent A step of forming a wiring, and a sealing layer forming step of forming a sealing layer so as to cover the laminated structure including the first and second electrode layers, the organic functional layer, and the connection wiring.
  • a first protective part covering the fuse part In the sealing layer forming step, a first protective part covering the fuse part, a second protective part covering other than the fuse part, and the first protective part when the fuse part is disconnected Transmission of impact to the second protective part It is characterized by the formation and a shock propagation blocking structure for blocking.
  • FIG. 2A is a plan view showing a partial configuration of the organic EL device according to Example 1 of the invention
  • FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG. 2 (c) is an enlarged plan view of the fuse portion according to the embodiment of the present invention
  • 3A to 3F are plan views showing a method for manufacturing an organic EL device according to Example 1 of the invention.
  • 4 (a) to 4 (f) are respectively the 4a-4a line, 4b-4b line, 4c-4c line, 4d-4d line, 4e-4e line, 4f- in FIG. 3 (a) to (f). It is sectional drawing along 4f line.
  • An organic electroluminescent device includes a substrate, a first electrode layer provided on the substrate, an organic functional layer including an organic material provided on the first electrode layer, and an organic functional layer.
  • the connection wiring has a fuse part that is broken by an overcurrent
  • the sealing layer has a first protection part that covers the fuse part, and a second protection part that covers other than the fuse part
  • An impact propagation preventing structure is provided for preventing propagation of impact generated in the first protection portion to the second protection portion when the fuse portion is disconnected.
  • the metal constituting the fuse is melted and disconnected, thereby interrupting the supply of current to the organic EL element.
  • the organic EL element is prevented from being seriously damaged.
  • the first protective part of the sealing layer covering the fuse part is damaged by heat and impact, such as destruction and peeling, but the impact generated in the first protective part by the impact propagation prevention structure. Is prevented from propagating to the second protection part, so that damage to the second protection part is prevented from spreading. Therefore, the moisture-proof effect with respect to an organic EL element can be hold
  • FIG. 1 is a plan view showing a configuration of an organic EL device 1 according to an embodiment of the present invention.
  • 2A is an enlarged plan view showing a partial configuration of the organic EL device 1 according to the embodiment of the present invention
  • FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG.
  • FIG. 2C is a plan view showing an enlarged view of the fuse portion according to the embodiment of the present invention.
  • the configuration excluding the insulating film 26 and the sealing layer 50 is shown for easy understanding.
  • the organic EL device 1 is a display device having a so-called dot matrix type display form in which each of the plurality of organic EL elements 100 functions as a pixel. That is, a plurality of power supply wirings 22 and a plurality of second electrodes 40 (second electrode layers) are arranged on the substrate 10 so as to intersect each other, and the organic EL element 100 is disposed in the vicinity of each of these intersections. Has been placed.
  • Each of the organic EL elements 100 has a stacked structure in which the first electrode 20 (first electrode layer), the organic functional layer 30, and the second electrode 40 are stacked.
  • the second electrode 40 extends in a direction orthogonal to the power supply wiring 22 and is commonly used for a plurality of organic EL elements.
  • Driving power is supplied to each of the organic EL elements 100 via the power supply wiring 22 and the connection wiring 24.
  • the organic EL device 1 is a so-called bottom emission type display device that extracts light generated in the organic functional layer 30 from the substrate 10 side.
  • the substrate 10 is made of a light transmissive material such as glass.
  • the first electrode 20 provided on the substrate 10 is an anode, and a conductive metal oxide having an optical transparency such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide) having a thickness of about 100 nm is formed in a rectangular shape. It is formed by patterning.
  • a power supply wiring 22 for supplying driving power to the organic EL element 100 is provided on the substrate 10 so as to be separated from the first electrode 20.
  • connection wiring 24 electrically connects the power supply wiring 22 and the first electrode 20 on the substrate 10.
  • the connection wiring 24 has a disconnection function that leads to disconnection when the current injected from the power supply wiring 22 into the organic EL element 100 becomes excessive, and blocks the short-circuit current from flowing into the organic EL element 100.
  • the connection wiring 24 can be disconnected at a desired current, for example, an alloy mainly composed of tin, bismuth, lead or the like, more specifically, a solder that is a tin-based alloy, wood metal, or rose alloy , Composed of a low melting point metal such as Newton alloy.
  • connection wiring 24 has a fuse portion 24a whose line width is narrower than that of the other portion, and thereby has a current withstand capability lower than that of the other portion. That is, when the organic EL element 100 is short-circuited and an overcurrent flows through the connection wiring 24, a disconnection occurs in the fuse portion 24a.
  • the fuse portion can be configured by making the layer thickness of the connection wiring 24 smaller than that of other portions or using a material having a lower melting point. Since each organic EL element 100 is connected to the connection wiring 24 having the fuse portion 24a, even if a short circuit occurs in a specific organic EL element, damage is not spread to other organic EL elements. It has become.
  • the organic functional layer 30 is formed by laminating a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer in this order on the first electrode 20.
  • the hole injection layer is made of, for example, copper phthalocyanine (CuPc) having a thickness of about 10 nm
  • the hole transport layer is made of, for example, ⁇ -NPD (Bis [N- (1-naphthyl) -N-pheny] benzidine) having a thickness of about 50 nm.
  • the light emitting layer is made of, for example, Alq3 (tris- (8-hydroxyquinoline) aluminum) having a thickness of about 50 nm
  • the electron injection layer is made of, for example, lithium fluoride (LiF) having a thickness of about 1 nm.
  • the second electrode 40 serving as a cathode is made of, for example, Al and is provided so as to cover the organic functional layer 30.
  • the second electrode 40 extends in a direction orthogonal to the extending direction of the power supply wiring 22.
  • the insulating layer 26 is inserted between the second electrode 40 and the power supply wiring 22 and connection wiring 24 to electrically insulate them.
  • an alloy having a relatively low work function such as Mg—Ag or Al—Li is preferable.
  • the sealing layer 50 is composed of a thin film made of an inorganic material such as SiNx, SiON, SiOx, AlOx, or AlN.
  • the sealing layer 50 covers the respective components of the organic EL device 1 described above and plays a role of preventing entry of oxygen and moisture from the outside.
  • the sealing layer 50 includes a first protection part 51 that covers the fuse part 24a and a second protection part 52 that covers a part other than the fuse part.
  • the second protection part 52 is formed so as to be in close contact with the second electrode 40 of the organic EL element.
  • the first protection part 51 and the second protection part 52 are separated from each other, and a gap 53 is formed between the first protection part 51 and the second protection part 52.
  • the first protective part 51 When viewed from the upper surface side of the sealing layer 50, the first protective part 51 has a rectangular shape, and the gap part 53 has an annular shape.
  • the structure in which the first protection part 51 and the second protection part 52 are separated is an impact propagation prevention structure.
  • connection wiring 24 is connected to the first electrode 20 that is an anode.
  • connection wiring 24 may be connected to the second electrode 40 that is a cathode. In this case, it is necessary to form an insulating film between the connection wiring 24 and the first electrode 20.
  • FIGS. 4 (a) to 4 (e) are plan views showing a method for manufacturing the organic EL device 1 having the above-described configuration
  • FIGS. 4 (a) to 4 (e) are views in FIGS. 3 (a) to 3 (e), respectively.
  • FIG. 4 is a cross-sectional view taken along lines 4a-4a, 4b-4b, 4c-4c, 4d-4d, and 4e-4e.
  • a light-transmitting conductive metal oxide such as ITO or IZO is deposited on the light-transmitting substrate 10 made of glass or the like by a sputtering method, for example, to a thickness of about 100 nm, and this is patterned into a rectangular shape by etching.
  • the electrode 20 is formed (FIGS. 3A and 4A).
  • a power supply wiring 22 made of a low resistance metal such as Al, Cu, Ag, Au or the like is formed on the substrate 10 at a position separated from the first electrode 20 by the same method as that for the first electrode 20.
  • alloys such as tin, bismuth, lead, etc. as the main component by mask vapor deposition, etc., more specifically, tin-based alloys such as solder, low melting point metals such as wood metal, rose alloy, and Newton alloy are used.
  • the connection wiring 24 is formed. Patterning is performed to form the fuse portion 24 a on the connection wiring 24. That is, the connection wiring 24 is patterned so that the line width is locally narrowed in the fuse portion 24a (FIGS. 3B and 4B).
  • a photosensitive resist (or polyimide) that is a material of the insulating film 26 is applied so as to cover the surfaces of the first electrode 20, the power supply wiring 22, and the connection wiring 24. Thereafter, the photosensitive resist is patterned through exposure and development. As a result, the insulating film 26 having an opening exposing the surface of the first electrode 20 and the surface of the fuse portion 24a is formed (FIGS. 3C and 4C).
  • the material of the insulating film 26 and the patterning method of the insulating film 26 are not limited to this.
  • the insulating film 26 may be made of an inorganic material such as SiO 2, and can be patterned by a known lift-off method or an etching method using a resist mask formed by a known photolithography technique.
  • the organic functional layer 30 is formed by sequentially forming a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer on the exposed first electrode 20 by an inkjet method, a mask vapor deposition method, or the like.
  • the hole injection layer is made of, for example, copper phthalocyanine (CuPc) having a thickness of about 10 nm
  • the hole transport layer is made of, for example, ⁇ -NPD (Bis [N- (1-naphthyl) -N-phenyl] benzidine) having a thickness of about 50 nm.
  • the light emitting layer is made of, for example, Alq3 (tris- (8-hydroxyquinoline) aluminum) having a thickness of about 50 nm
  • the electron injection layer is made of, for example, lithium fluoride (LiF) having a thickness of about 1 nm (FIG. 3). (D), FIG. 4 (d)).
  • Al which is an electrode material
  • Al is deposited in a desired pattern on the structure obtained through each of the above steps by vapor deposition using a mask having an opening corresponding to the pattern of the second electrode 40.
  • the second electrode 40 connected to the organic functional layer 30 and extending in a direction perpendicular to the extending direction of the power supply wiring 22 is formed. That is, the organic functional layer 30 is sandwiched between the first electrode 20 and the second electrode 40, and the second electrode 40 is insulated from the power supply wiring 22 and the connection wiring 24 by the insulating layer 26 (FIG. 3 (e), FIG. 4 (e)).
  • an inorganic material such as SiNx, SiON, SiOx, AlOx, or AlN is deposited so as to cover the entire structure obtained through each of the above steps by a plasma CVD method capable of isotropic film formation.
  • the sealing layer 50 is formed.
  • the sealing layer 50 is formed in close contact with the organic EL element 100 and is also formed on the fuse portion 24a.
  • the sealing layer 50 is patterned by an etching method using a resist mask formed by a known photolithography technique, or the sealing layer 50 is partially removed by irradiating a laser, and By forming the gap portion 53, the sealing layer 50 is divided into a first protection portion 51 that covers the fuse portion 24a and a second protection portion 52 that covers a portion other than the fuse portion (see FIG. 3 (f), FIG. 4 (f)).
  • the organic EL device 1 is completed through the above steps.
  • the first protective part 51 and the second protective part 52 may be formed separately using a mask vapor deposition method when forming the sealing layer 50.
  • the first protective part 51, The formation with the second protection part 52 is not particularly limited.
  • the organic EL device 1 when an overcurrent flows from the power supply wiring 22 to the organic EL element 100 via the connection wiring 24 due to a short circuit between the first and second electrodes. Since the low melting point metal of the fuse portion 24a is melted and the fuse portion 24a is disconnected, the supply of current to the organic EL element 100 is interrupted. As a result, it is possible to prevent the organic EL element 100 from being seriously damaged. At that time, the metal of the fuse portion 24a is melted, so that the first protective portion 51 of the sealing layer 50 covering the fuse portion 24a is damaged by heat and impact such as destruction and peeling.
  • the sealing layer 50 has an impact propagation blocking structure separated by sandwiching the gap 53 between the first protective part 51 and the second protective part 52 covering the part other than the fuse part, Even if the first protection part 51 is damaged, the propagation of the impact is blocked by the gap 53, so that the damage does not spread to the second protection part 52. Therefore, even if the metal of the fuse part 24a is melted, the moisture-proof effect on the organic EL element 100 can be maintained by the second protective part 52.
  • FIG. 5 is a cross-sectional view showing a configuration of an organic EL device 2 according to Example 2 of the present invention.
  • the first protective part 51 and the second protective part 52 of the sealing layer 50 are not completely separated.
  • the gap 53 exists between the first protection part 51 and the second protection part 52, but does not reach the fuse part 24a. That is, the sealing layer 50 is formed thinner at the boundary between the first protective part 51 and the second protective part 52 than the organic EL device 1 of the first embodiment described above.
  • the layer thickness of the boundary part is made thinner than the layer thickness of each of the first protection part 51 and the second protection part 52.
  • Other components other than the depth of the gap 53 are the same as those of the organic EL device 1 of the first embodiment.
  • first protective part 51 formation mask and the second protective part 52 are formed.
  • the first protective portion 51 and the second protective portion 52 are individually formed by vapor-depositing the material of the sealing layer 50 by a mask vapor deposition method using a mask vapor deposition method.
  • the portion can be formed thin.
  • the boundary portion can be broken to prevent the damage to the second protection portion 52 from being expanded.
  • the thickness of the boundary portion may basically be thinner than the second protective portion 52, but is preferably 1 ⁇ 2 or less, preferably 1/10 or less.
  • FIG. 6 is a cross-sectional view showing the configuration of the organic EL device 3 according to Example 3 of the present invention.
  • the first protective portion 51 and the second protective portion 52 of the sealing layer 50 are not completely separated, but the void portion 53 is present. do not do.
  • the film thickness of the first protection part 51 is made thinner than the film thickness of the second protection part 52.
  • the second protective part 52 is formed by vapor-depositing the material of the sealing layer 50 by mask vapor deposition.
  • the first protection part 51 can be formed thin.
  • the organic EL device 3 having such a structure, even if damage such as destruction of the first protective part 51 on the fuse part 24a occurs, an impact propagation blocking structure in which the first protective part 51 is thin is formed. Therefore, the first protective part 51 can be broken to prevent the damage to the second protective part 52 from expanding.
  • FIG. 7 is a cross-sectional view showing a configuration of an organic EL device 4 according to Example 4 of the present invention.
  • the first protection part 51 and the second protection part 52 of the sealing layer 50 are completely separated, and a boundary portion between the first protection part 51 and the second protection part 52 (
  • a partition 54 is formed in an annular shape on the fuse portion 24a in a portion corresponding to the gap portion 53 of the first embodiment.
  • the partition wall 54 is made of resin, for example.
  • the partition wall 54 can be formed on the fuse portion 24a by using, for example, a photolithography technique before the sealing layer 50 is formed.
  • the sealing layer 50 is formed by depositing the material of the sealing layer 50 by mask vapor deposition.
  • the propagation of the shock is first caused by the shock propagation preventing structure having the partition wall 54. Since it is blocked by the partition wall 54 provided between the protective part 51 and the second protective part 52, it is possible to prevent the damage to the second protective part 52 from expanding.
  • the partition wall 54 finely by using a photolithography technique, and the process can be simplified.
  • the function of the fuse part 24a can be increased by forming the sealing film forming area on the fuse part 24a, that is, the size of the first protection part 51 small. It can be exhibited without being hindered by film stress.
  • the partition wall 54 is formed in an overhang shape, the film formed on the fuse portion 24a can be made thinner and smaller. Even if a part of the sealing film 50 is connected between the first protective part 51 and the second protective part 52 on the partition wall 54, the connected part is damaged to the first protective part 51. When this occurs, it can be broken by the impact to prevent the damage to the second protection part 52 from being expanded.

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Abstract

Une première couche d'électrode et un fil de connexion connecté à la première couche d'électrode sont présents sur un substrat. Une couche fonctionnelle organique composée d'un matériau organique et une seconde couche d'électrode sont empilées sur la première couche d'électrode, constituant un élément électroluminescent organique. Une couche d'étanchéité est destinée à recouvrir l'élément électroluminescent organique et le fil de connexion. Le fil de connexion présente une partie fusible rompue par une surintensité. La couche d'intensité présente une première partie protectrice recouvrant la partie fusible et une seconde partie protectrice recouvrant des parties différentes de la partie fusible, et présente une structure destinée à empêcher la transmission d'un impact, se produisant dans la première partie protectrice lorsque la partie fusible se rompt, à la seconde partie protectrice.
PCT/JP2011/080251 2011-12-27 2011-12-27 Dispositif à diodes électroluminescentes organiques et son procédé de fabrication WO2013098951A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3059940A1 (fr) * 2016-12-12 2018-06-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d'un empilement et empilement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196190A (ja) * 2000-01-14 2001-07-19 Fuji Electric Co Ltd 有機薄膜発光ディスプレイ
JP2004296154A (ja) * 2003-03-26 2004-10-21 Konica Minolta Holdings Inc 電極とその製造方法及び有機エレクトロルミネッセンス素子
JP2007207569A (ja) * 2006-02-01 2007-08-16 Tohoku Pioneer Corp 光デバイス、および光デバイスの製造方法
JP2011060680A (ja) * 2009-09-14 2011-03-24 Seiko Epson Corp 照明装置及び電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001196190A (ja) * 2000-01-14 2001-07-19 Fuji Electric Co Ltd 有機薄膜発光ディスプレイ
JP2004296154A (ja) * 2003-03-26 2004-10-21 Konica Minolta Holdings Inc 電極とその製造方法及び有機エレクトロルミネッセンス素子
JP2007207569A (ja) * 2006-02-01 2007-08-16 Tohoku Pioneer Corp 光デバイス、および光デバイスの製造方法
JP2011060680A (ja) * 2009-09-14 2011-03-24 Seiko Epson Corp 照明装置及び電子機器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3059940A1 (fr) * 2016-12-12 2018-06-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d'un empilement et empilement
WO2018108540A1 (fr) * 2016-12-12 2018-06-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de formation d'un empilement et empilement
US10741799B2 (en) 2016-12-12 2020-08-11 Commissariat a l'Energie et aux Energies Alternatives Method for forming a stack and stack

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