WO2013076975A1 - 表面電位分布計測装置および表面電位分布計測方法 - Google Patents
表面電位分布計測装置および表面電位分布計測方法 Download PDFInfo
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- WO2013076975A1 WO2013076975A1 PCT/JP2012/007467 JP2012007467W WO2013076975A1 WO 2013076975 A1 WO2013076975 A1 WO 2013076975A1 JP 2012007467 W JP2012007467 W JP 2012007467W WO 2013076975 A1 WO2013076975 A1 WO 2013076975A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
- G01R29/14—Measuring field distribution
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
- G01R15/241—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using electro-optical modulators, e.g. electro-absorption
- G01R15/242—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using electro-optical modulators, e.g. electro-absorption based on the Pockels effect, i.e. linear electro-optic effect
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/34—Testing dynamo-electric machines
Definitions
- the present invention relates to a surface potential distribution measuring apparatus and a surface potential distribution measuring method for an electric field relaxation system of a rotating electrical machine.
- Inverter-driven rotating electrical machine systems that drive rotating electrical machines with inverters have been developed and spread.
- the inverter converts a DC voltage into a pulse voltage by a switching operation, and supplies the pulse voltage to the rotating electrical machine via a cable.
- the rotating electrical machine is driven by this pulse voltage.
- an electric field relaxation system is applied in which a low resistance layer and an electric field relaxation layer formed partially overlapping the low resistance layer are combined.
- inverter drive system a reflected wave is generated due to impedance mismatch between the inverter, the cable, and the rotating electrical machine.
- high voltage noise so-called inverter surge, may occur at a portion between the cable and the rotating electrical machine, particularly at a connection portion between the cable and the rotating electrical machine.
- stator pulse voltage When a pulse voltage including these inverter surges (hereinafter referred to as inverter pulse voltage) is repeatedly generated, the above-described stator coil at the core end (hereinafter referred to as stator coil end) is generated during operation at a commercial frequency. Therefore, partial discharge and heat generation that impede reliability may occur even in the electric field relaxation system, and ultimately the reliability of the stator coil may be significantly reduced.
- Non-Patent Document 1 The occurrence of partial discharge and heat generation depends on the surface potential of the electric field relaxation system (see Non-Patent Document 1). Therefore, a technique for correctly measuring the surface potential of the electric field relaxation system assuming generation of an inverter pulse voltage has been strongly desired.
- Patent Document 1 When measuring the surface potential, a surface potential meter is usually used (see Patent Document 1).
- a probe is brought into contact with or close to an electric field relaxation system, and a nonlinear resistance is calculated using a surface potential measured by a surface potentiometer.
- the inverter pulse voltage has a high frequency component of the order of kHz or higher.
- the surface potentiometer cannot follow the above-described high-frequency component and cannot measure the surface potential of the electric field relaxation system assuming the generation of the inverter pulse voltage.
- a metal material is usually used for the probe. For this reason, in the method of bringing the probe into contact with or approaching the electric field relaxation system, static electricity may be generated between the electric field relaxation system and the probe. Further, when an inverter surge occurs, corona discharge may occur between the electric field relaxation system and the probe. As described above, when a metal material is used for the measurement point, the surface potential of the electric field relaxation system assuming the generation of the inverter pulse voltage cannot be measured due to the disturbance to the measurement object.
- the problem to be solved by the present invention is to measure the surface potential of an electric field relaxation system assuming the generation of an inverter pulse voltage.
- a surface potential distribution measuring apparatus is a surface potential distribution measuring apparatus for measuring a surface potential of an electric field relaxation system applied to a stator coil end, which is an end of a stator coil of a rotating electrical machine.
- the emitted laser, the Pockels crystal on which the laser beam emitted from the laser is incident on one end face, and the laser on which the surface is provided on the other end face of the Pockels crystal and incident from one end face of the Pockels crystal A mirror that reflects light in the direction opposite to the incident direction, and a band that follows the high-frequency component of the inverter pulse voltage, the laser light reflected by the mirror is incident, and the light intensity of the laser light,
- the output voltage of the Pockels crystal when a voltage is applied to the stator coil is set as an output voltage at the time of test, and the output voltage at the time of test is calculated from the input voltage vs. output voltage characteristics stored in the voltage calibration database.
- an operation unit that specifies an input voltage corresponding to the surface potential of the electric field relaxation system.
- the surface potential distribution measuring method of the present invention is a surface potential distribution measuring method for measuring the surface potential of an electric field relaxation system applied to a stator coil end, which is an end of a stator coil of a rotating electrical machine, A step of emitting light from one end face of the Pockels crystal toward the other end face, and a mirror having a surface provided on the other end face of the Pockels crystal, the laser light incident from one end face of the Pockels crystal is incident direction
- the laser beam reflected by the mirror is incident by a photodetector having a band that follows the high-frequency component of the inverter pulse voltage, and is reflected as the light intensity of the laser beam.
- the detected light intensity corresponding to the output voltage which is the potential difference between one end face and the other end face of the Pockels crystal, and performing before the test.
- the different output voltages and the output of the Pockels crystal when the input voltage is applied to the back surface of the mirror
- a part of the surface of the electric field relaxation system is used as a test location on the back surface of the mirror.
- the output voltage of the Pockels crystal when a voltage is applied to the stator coil is used as an output voltage during a test, and the input voltage versus output voltage characteristics stored in the voltage calibration database Specifying an input voltage corresponding to an output voltage at the time of testing as a surface potential of the electric field relaxation system. And wherein the door.
- FIG. 1 is a block diagram showing a configuration of a surface potential distribution measuring apparatus 1 according to the first embodiment.
- FIG. 2 is a perspective view of the stator of the rotating electric machine, the electric field relaxation system 3, and the Pockels crystal 23 of the surface potential distribution measuring apparatus 1, which are simply expressed.
- the surface potential distribution measuring apparatus 1 is applied to an electric field relaxation system 3 described later, and the electric field relaxation system 3 is applied to an inverter-driven rotating electrical machine.
- the rotating electrical machine has a stator and a rotor.
- the rotor is arranged inside the stator and rotates.
- the rotor has a rotating shaft, a rotor core, and a rotor coil.
- the rotor core rotates with the rotation axis.
- the rotor coil is wound around the rotor core.
- the stator includes a stator core 11, a stator coil, and a main insulating layer 13.
- the stator core 11 is arranged at a predetermined interval on the outer side in the radial direction of the rotor. Slots are formed at predetermined intervals along the inner peripheral edge of the stator core 11.
- the half-turn coil which is the coil conductor 12 is accommodated in the slot.
- Half turn coils are connected to each other outside the stator core. That is, half-turn coils are electrically connected to each other, and a stator coil is manufactured.
- This stator coil is manufactured for the U phase, the V phase, and the W phase, whereby a three-phase winding coil of the U phase, the V phase, and the W phase is manufactured.
- a main insulating layer 13 is provided on the outer periphery of the stator coil to cover the stator coil. Specifically, a ground insulating tape mainly composed of mica epoxy is wound around the outer periphery of the stator coil as the main insulating layer 13 (see FIG. 4).
- stator coil end 16 Since the end portion of the stator coil provided with the main insulating layer 13 (hereinafter referred to as the stator coil end 16) is not a portion that directly contributes to power generation, the connection portion between the half-turn coils in the stator coil end 16 is A three-dimensionally bent (curved) shape is employed. A so-called involute shape is employed. Thereby, a rotary electric machine can be made compact.
- the stator coil end 16 is provided with an electric field relaxation system 3 for preventing the occurrence of corona discharge described later.
- the electric field relaxation system 3 will be described with reference to FIG.
- the electric field relaxation system 3 includes a low resistance layer 14 and an electric field relaxation layer 15.
- a low resistance layer 14 is provided on the outer periphery of the main insulating layer 13. Specifically, on the outer periphery of the main insulating layer 13, from the portion where the main insulating layer 13 faces the inner periphery of the stator core 11 to the portion where the main insulating layer 13 is exposed outside the stator core 11, A low resistance semiconductive tape is wound as the low resistance layer 14 (see FIG. 4).
- the width of the low resistance layer 14 provided outside the stator core 11 (hereinafter referred to as the end portion 17 of the low resistance layer 14) is about several tens of millimeters.
- the low resistance layer 14 is grounded together with the stator core 11. Therefore, when a voltage (alternating voltage) is applied to the coil conductor 12, the coil conductor 12 serves as a drive electrode, and the low resistance layer 14 serves as a ground electrode. In this case, equipotential lines generated between the coil conductor 12 and the low resistance layer 14 in the stator core 11 are substantially parallel. On the other hand, equipotential lines generated between the coil conductor 12 and the low resistance layer 14 in the stator coil end 16 are distributed in the thickness direction of the main insulating layer 13. In the stator coil end 16, equipotential lines are densely distributed depending on the difference in relative dielectric constant between the main insulating layer 13 and the coil conductor 12 and the resistivity of the surface of the coil conductor 12.
- the potential gradient increases on the surface of the stator coil end 16, and the electric field concentrates in the creeping direction of the stator coil end 16.
- the electric field relaxation layer 15 is provided on the outer periphery of the end portion 17 of the low resistance layer 14 and the main insulating layer 13 of the stator coil end 16.
- a high resistance semiconductive tape for reducing the potential gradient covers the end portion 17 of the low resistance layer 14 as the electric field relaxation layer 15. (See FIG. 4).
- the surface potential distribution measuring apparatus 1 measures the surface potential of the electric field relaxation system 3 applied to the stator coil end 16.
- the surface potential distribution measuring apparatus 1 includes a semiconductor laser generator (hereinafter referred to as a laser) 21, a polarization beam splitter (hereinafter referred to as PBS) 22, a Pockels crystal 23, and a dielectric mirror (hereinafter referred to as a mirror). 24, a photodetector 25, and an arithmetic device 30.
- a semiconductor laser generator hereinafter referred to as a laser
- PBS polarization beam splitter
- PBS polarization beam splitter
- a Pockels crystal 23 a dielectric mirror
- the laser 21 emits laser light in the incident direction (x direction) perpendicular to the longitudinal direction (y direction) of the electric field relaxation system 3.
- the laser light has a wavelength of 532.0 nm, a maximum output of 10 mW, and a diameter of 0.34 mm.
- the wavelength of the laser beam is 532.0 nm, but it is sufficient that the laser beam can be propagated in the Pockels crystal 23 and the optical component without being greatly attenuated.
- the laser beam is linearly polarized light, and the plane of polarization of the linearly polarized light is parallel to the incident direction x and the direction perpendicular to the longitudinal direction y (z direction).
- PBS22 passes only the linearly polarized light.
- the PBS 22 allows the laser light emitted from the laser 21 to pass in the incident direction x.
- the Pockels crystal 23 is arranged so that its longitudinal direction is parallel to the incident direction x, and is arranged along with the laser 21 and the PBS 22 in the incident direction x. One end surface of the Pockels crystal 23 is grounded. Alternatively, one end face of the Pockels crystal 23 is set to 0 [V] by the power supply device. Laser light from the PBS 22 is incident on one end surface of the Pockels crystal 23 and travels to the other end surface that does not intersect with one end surface of the Pockels crystal 23.
- the surface of the mirror 24 is provided on the other end surface of the Pockels crystal 23.
- a voltage is applied to the back surface of the mirror 24 from the object to be measured. That is, a voltage is applied to the other end surface of the Pockels crystal 23.
- the measurement object is the electric field relaxation system 3.
- a part of the surface of the electric field relaxation system 3 is provided as a test location on the back surface of the mirror 24.
- the back surface of the mirror 24 is provided a predetermined distance away from the test location.
- the predetermined distance is 1 mm in the present embodiment, but is changed in consideration of spatial resolution.
- the mirror 24 reflects the laser beam incident from one end surface of the Pockels crystal 23 in a direction opposite to the incident direction x.
- the Pockels crystal 23 is a piezoelectric isotropic crystal belonging to the “crystal point group 3 m” and generates the Pockels effect.
- the Pockels effect is a phenomenon that shows birefringence when an electric field (voltage) is applied to a dielectric isotropic crystal, and the refractive index (light intensity) changes in proportion to the voltage at that time. is there.
- Examples of the Pockels crystal 23 include a BGO (Bi12GeO20) crystal.
- the Pockels crystal can be sensitive to a component parallel or perpendicular to the light propagation direction of the external electric field, depending on the direction formed by the crystal orientation and the propagation direction of the incident light.
- the former is called vertical modulation
- the latter is called horizontal modulation.
- the Pockels crystal belonging to the “crystal point group 3 m” is a crystal that can perform a vertical modulation arrangement. In the vertical modulation arrangement, the light intensity is proportional to the integral value of the component parallel to the optical path of the external electric field, that is, the voltage. Change.
- the light intensity of the laser light reflected by the mirror 24 corresponds to the output voltage VPout which is a potential difference between one end surface and the other end surface of the Pockels crystal 23 (hereinafter also referred to as “between both surfaces”).
- the PBS 22 allows the laser beam reflected by the mirror 24 to pass in the longitudinal direction y (in this embodiment, the direction opposite to the longitudinal direction y).
- the photodetector 25 has a band that follows the high-frequency component of the inverter pulse voltage.
- the photodetector 25 is disposed in the longitudinal direction y (in the present embodiment, the direction opposite to the longitudinal direction y) with respect to the PBS 22.
- Laser light from the PBS 22 is incident on the photodetector 25.
- the photodetector 25 detects the detection light intensity Pout as the light intensity of the laser light.
- the detected light intensity Pout corresponds to the output voltage VPout which is a potential difference between one end face and the other end face of the Pockels crystal 23.
- the detected light intensity Pout is expressed as the following expression as a cosine function of the output voltage VPout.
- the output voltage VPout of the Pockels crystal 23 is obtained from the inverse function of the cosine function based on the detected light intensity Pout. Since the Pockels crystal 23 is a relatively long crystal having a length of 100 mm, the disturbance of the electric field distribution on the dielectric surface caused by bringing the Pockels crystal 23 closer is small. Therefore, the output voltage VPout of the Pockels crystal 23 is proportional to the surface potential of the electric field relaxation system 3 that is the measurement target.
- the computing device 30 is a computer connected to the photodetector 25 and the output device 34, and includes a CPU (Central Processing Unit) and a storage device.
- a computer program is stored in the storage device, and the CPU reads the computer program from the storage device and executes the computer program.
- Examples of the output device 34 include a display device and a printing device.
- the computing device 30 includes a computing unit 31, a voltage calibration database 32, and a surface potential measurement database 33 as CPU functional blocks.
- the surface potential distribution measuring apparatus 1 performs a voltage calibration process described later before the test, and performs a surface potential measurement process described later during the subsequent test.
- the computing unit 31 constructs a voltage calibration database 32 by voltage calibration processing, and refers to the voltage calibration database 32 by surface potential measurement processing. For example, a voltage calibration process or a surface potential measurement process is set in the calculation unit 31 by an input operation of a tester.
- FIG. 5 is a flowchart showing an example of the voltage calibration process.
- step S11 voltage calibration setting processing
- step S12 input voltage
- step S12 input voltage
- the laser light emitted from the laser 21 is reflected by the mirror 24 via the PBS 22 and the Pockels crystal 23, and the laser light reflected by the mirror 24 is incident on the photodetector 25 via the Pockels crystal 23 and the PBS 22.
- the photodetector 25 detects the light intensity of the laser light from the PBS 22 as the detected light intensity Pout (step S13; light intensity detection process).
- the calculation unit 31 performs the following process.
- the calculation unit 31 calculates the output voltage VPout [V] of the Pockels crystal 23 from the detected light intensity Pout using the above cosine function. That is, the output voltage VPout [V] corresponding to the detected light intensity Pout is derived from the detected light intensity Pout (step S14; output voltage calculation process).
- the calculation unit 31 stores the output voltage VPout [V] in the voltage calibration database 32 together with the above-described input voltage Vin [kV] input by the tester's input operation, for example (step S15; output voltage storage processing).
- step S16—NO the above steps S11 to S15 are repeated while changing the input voltage Vin [kV].
- the voltage calibration database 32 stores the input voltage vs. output voltage characteristics indicating the relationship between the different input voltages Vin [kV] and the output voltage VPout [V] of the Pockels crystal 23 at that time. That is, the input voltage versus output voltage characteristic as shown in FIG. 3 is generated, and the voltage calibration database 32 is constructed.
- FIG. 3 is a diagram showing input voltage versus output voltage characteristics in the voltage calibration process.
- the calculation unit 31 refers to the voltage calibration database 32 and performs fitting from the relationship between the different input voltage Vin [kV] and the output voltage VPout [V] of the Pockels crystal 23 to obtain a relational expression for voltage calibration.
- the input voltage vs. output voltage characteristics as shown in FIG. 3 can be obtained.
- the calculation unit 31 When ending the voltage calibration process (step S16—YES), the calculation unit 31 outputs the input voltage vs. output voltage characteristics stored in the voltage calibration database 32 to the output device 34.
- the output device 34 is a display device
- the input voltage vs. output voltage characteristic is displayed on the display device
- the output device 34 is a printing device
- the input voltage vs. output voltage characteristic is printed by the printing device (step S17; Input voltage vs. output voltage characteristics output processing).
- FIG. 6 is a flowchart showing an example of the surface potential measurement process.
- a surface potential measurement process is set in the calculation unit 31 (step S21; surface potential measurement setting process).
- test location L [mm] represents a distance extending in the longitudinal direction y from the first position P (step S22; test location arrangement process).
- an AC voltage having a frequency of 50 Hz and a peak value of 10 kV is applied as a test voltage to the stator coil of the rotating electrical machine (step S23; test voltage application process).
- the laser light emitted from the laser 21 is reflected by the mirror 24 via the PBS 22 and the Pockels crystal 23, and the laser light reflected by the mirror 24 is incident on the photodetector 25 via the Pockels crystal 23 and the PBS 22.
- the light detector 25 detects the light intensity of the laser light from the PBS 22 as the detected light intensity Pout (step S24; light intensity detection process).
- the calculation unit 31 performs the following process.
- the calculation unit 31 calculates the output voltage VPout [V] of the Pockels crystal 23 from the detected light intensity Pout using the above cosine function. That is, the output voltage VPout [V] corresponding to the detection light intensity Pout is derived from the detection light intensity Pout.
- the output voltage VPout [V] is set as the test output voltage Vout [V] (step S25; output voltage calculation process).
- the calculation unit 31 calculates the input voltage Vin [kV] corresponding to the test output voltage Vout [V] from the input voltage versus output voltage characteristics stored in the voltage calibration database 32, and the surface potential Vsuf [kV] of the electric field relaxation system 3. (Step S26; surface potential specifying process).
- the computing unit 31 stores the surface potential Vsuf [kV] in the surface potential measurement database 33 together with the above-described test location L [mm] input by the tester's input operation, for example (step S27; surface potential storage processing). .
- step S28 Thereafter, when the surface potential measurement process is not terminated (NO in step S28), the above steps S21 to S27 are repeated while changing the test location L [mm]. For example, when the test locations L are provided at different positions from the first position P to the second position Q with respect to the back surface of the mirror 24, the calculation unit 31 determines that the test locations L [mm] are different from each other.
- the surface potential Vsuf [kV] of the electric field relaxation system 3 that is sometimes specified is stored in the surface potential measurement database 33.
- the surface potential measurement database 33 has test point-to-surface potential characteristics indicating the relationship between different test points L [mm] and the surface potential Vsuf [kV] of the electric field relaxation system 3 specified at that time.
- the calculation unit 31 uses the surface potential measurement database 33 to generate a test point versus surface potential characteristic as shown in FIG.
- FIG. 4 is a diagram showing test point-to-surface potential characteristics in the surface potential measurement process in association with the schematic cross sections of the stator of the rotating electrical machine and the electric field relaxation system 3.
- the slope of the surface potential Vsuf [kV] is low resistance layer 14 and the electric field relaxation layer. It turns out that it becomes steep from the boundary area
- the calculation unit 31 When ending the surface potential measurement process (step S28—YES), the calculation unit 31 outputs the test location-to-surface potential characteristics stored in the surface potential measurement database 33 to the output device 34.
- the output device 34 is a display device
- the test location vs. surface potential characteristics are displayed on the display device
- the output device 34 is a printing device
- the test location vs. surface potential characteristics are printed by the printing device (step S29; Test location vs. surface potential characteristics output processing).
- the calculation unit 31 calculates the first test location L1 [mm] and the first test location L1 [mm] out of the different test locations L [mm] from the test location vs. surface potential characteristics stored in the surface potential measurement database 33.
- the electric field E [kV / m] between two points with the two test locations L2 [mm] may be calculated, and a value representing the electric field E [kV / m] may be output to the output device 34.
- the surface potential Vsuf [kV] corresponding to the first test location L1 [mm] is defined as the first surface potential Vsuf1 [kV]
- the surface potential Vsuf [kV] corresponding to the second test location L1 [mm] is defined as the first.
- E (Vsuf2-Vsuf1) / (L2-L1).
- the first test location L1 [mm] and the second test location L2 [mm] may be arbitrarily selected, and the second test location L [mm] is the next of the first test location L [mm]. It may be selected as a test location.
- the Pockels crystal 23 between the laser 21 and the surface of the electric field relaxation system 3 (test location L) is used. That is, the Pockels effect is used by the Pockels crystal 23.
- the surface potential distribution measuring apparatus 1 can measure the surface potential Vsuf of the electric field relaxation system 3 from the light intensity (output voltage VPout) of the laser light.
- the photodetector 25 having a band that follows the high-frequency component of the inverter pulse voltage is used. Therefore, even when the inverter pulse voltage is generated, the light intensity of the laser beam reflected by the mirror 24 between the Pockels crystal 23 and the test location L is detected by the photodetector 25. For this reason, the surface potential distribution measuring apparatus 1 can measure the surface potential Vsuf of the electric field relaxation system 3 assuming the generation of the inverter pulse voltage from the light intensity (output voltage VPout) of the laser beam.
- the voltage calibration database 32 stores an input voltage vs. output voltage characteristic indicating a relationship with the output voltage VPout (detected light intensity Pout detected by the photodetector 25) of the Pockels crystal 23 at that time.
- the Pockels crystal when the voltage is applied to the stator coil
- the output voltage VPout 23 (detected light intensity Pout detected by the light detector 25) is taken as the test output voltage Vout, and corresponds to the test output voltage Vout from the input voltage vs. output voltage characteristics stored in the voltage calibration database 32.
- the input voltage Vin to be specified can be specified as the surface potential Vsuf of the electric field relaxation system 3.
- the disturbance to the measurement object can be minimized.
- the surface potential of the electric field relaxation system assuming the generation of the inverter pulse voltage can be measured.
- the surface potential distribution measuring apparatus 1 performs the above-described voltage calibration process before the test, and performs the above-described surface potential measurement process and the below-described potential difference calculation process during the subsequent test. For example, a voltage calibration process or a surface potential measurement process and a potential difference calculation process are set in the calculation unit 31 by an input operation of a tester.
- FIG. 7 is a block diagram showing a configuration of the surface potential distribution measuring apparatus 1 according to the second embodiment.
- the surface potential measurement database 33 is assigned to each different electric field relaxation system 3. That is, the surface potential measurement database 33 is provided in the arithmetic device 30 corresponding to the number of the electric field relaxation systems 3.
- FIG. 8 is a flowchart showing an example of the potential difference calculation process.
- a potential difference calculation process is set in the calculation unit 31 by, for example, an input operation of the tester (step S31; potential difference calculation setting process).
- the calculation unit 31 performs the following process.
- the calculation unit 31 checks whether or not the same test location L is stored in the surface potential measurement database 33 assigned to the first electric field relaxation system 3A and the second electric field relaxation system 3B (step S32).
- the calculation unit 31 uses the surface potential Vsuf [kV] of the first electric field relaxation system 3A and the second electric field relaxation system at the same test location L.
- a surface potential difference VAB [kV] which is a potential difference between the surface potential Vsuf of 3B and [kV] is calculated.
- the surface potential Vsuf [kV] of the first electric field relaxation system 3A is set to the first electric field relaxation system surface potential Vsuf31 [kV]
- the surface potential Vsuf [kV] of the second electric field relaxation system 3B is set to the second electric field relaxation system surface.
- step S34 When the above-described surface potential measurement processing is completed (step S34—YES), the calculation unit 31 outputs a value representing the test point versus surface potential characteristic and the electric field E [kV / m] to the output device 34 in step S29. Then, a value representing the surface potential difference VAB [kV] is output to the output device 34 (step S35; surface potential difference output processing).
- the potential difference between the adjacent electric field relaxation systems 3 can be measured.
- SYMBOLS 1 Surface potential distribution measuring device 3 ... Electric field relaxation system 11 ... Stator core 12 ... Coil conductor 13 ... Main insulation layer 14 ... Low resistance layer 15 ... Electric field relaxation layer 16 ... Stator coil end 17 ... End of low resistance layer 21 ... Laser (semiconductor laser generator) 22... PBS 23 ... Pockels crystal 24 ... Mirror (dielectric mirror) 25... Photodetector 30... Arithmetic unit 31. Arithmetic unit 32 .. voltage calibration database 33... Surface potential measurement database 34.
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Abstract
Description
図1は、第1実施形態に係る表面電位分布計測装置1の構成を示すブロック図である。図2は、簡易的に表した回転電機の固定子、電界緩和システム3、および、表面電位分布計測装置1のポッケルス結晶23の斜視図である。
上記余弦関数において、Pinはポッケルス結晶23の入射光強度であり、Vπは半波長電圧であり、θ0は波長板によって与える位相差(任意)である。本実施形態では、検出光強度Poutにより、上記余弦関数の逆関数からポッケルス結晶23の出力電圧VPoutを求めている。ポッケルス結晶23は、100mm長と比較的長い結晶を用いているため、ポッケルス結晶23を近づけることによる誘電体表面の電界分布の乱れは小さい。そのため、ポッケルス結晶23の出力電圧VPoutは、測定対象である電界緩和システム3の表面電位に比例する。
第2実施形態について、第1実施形態の変更点のみ説明する。特に記載していない部分は第1実施形態と同様である。
3 … 電界緩和システム
11 … 固定子コア
12 … コイル導体
13 … 主絶縁層
14 … 低抵抗層
15 … 電界緩和層
16 … 固定子コイルエンド
17 … 低抵抗層の端部
21 … レーザ(半導体レーザ発生器)
22 … PBS
23 … ポッケルス結晶
24 … ミラー(誘電体ミラー)
25 … 光検出器
30 … 演算装置
31 … 演算部
32 … 電圧校正データベース
33 … 表面電位測定データベース
34 … 出力装置
Claims (11)
- 回転電機の固定子コイルの端部である固定子コイルエンドに施された電界緩和システムの表面電位を計測する表面電位分布計測装置であって、
レーザ光を出射するレーザと、
前記レーザから出射された前記レーザ光が一端面に入射されるポッケルス結晶と、
その表面が前記ポッケルス結晶の他端面に設けられ、前記ポッケルス結晶の一端面から入射された前記レーザ光を入射方向とは反対方向に反射するミラーと、
インバータパルス電圧の高周波成分に追従する帯域を有し、前記ミラーにより反射された前記レーザ光を入射して、前記レーザ光の光強度として、前記ポッケルス結晶の一端面と他端面との間の電位差である出力電圧に対応する検出光強度を検出する光検出器と、
試験前に行われる電圧校正処理において、前記ミラーの裏面に対して各々異なる入力電圧が印加されたときに、各々異なる前記入力電圧と前記ミラーの裏面に前記入力電圧が印加されたときの前記ポッケルス結晶の前記出力電圧との関係を示す入力電圧対出力電圧特性が格納された電圧校正データベースと、
試験時に行われる表面電位測定処理において、前記ミラーの裏面に前記電界緩和システムの表面の一部が試験箇所として配置された場合に、前記固定子コイルに電圧が印加されたときの前記ポッケルス結晶の前記出力電圧を試験時出力電圧とし、前記電圧校正データベースに格納された前記入力電圧対出力電圧特性から、前記試験時出力電圧に対応する入力電圧を前記電界緩和システムの表面電位として特定する演算部と、
を具備することを特徴とする表面電位分布計測装置。 - 前記検出光強度は、前記出力電圧の余弦関数により表され、
前記演算部は、前記余弦関数を用いて、前記検出光強度から前記ポッケルス結晶の前記出力電圧を導き出す、
ことを特徴とする請求項1に記載の表面電位分布計測装置。 - 直線偏光だけを通過させる偏光ビームスプリッタ(以下、PBSと称する)、をさらに具備し、
前記レーザは、前記電界緩和システムの長手方向に垂直な前記入射方向に向かって、前記直線偏光である前記レーザ光を出射し、
前記PBSは、前記レーザから出射された前記レーザ光を前記入射方向に向かって通過させ、
前記ポッケルス結晶は、その長手方向が前記入射方向に平行になるように配置され、前記レーザおよび前記PBSとともに前記入射方向に並べて配置され、前記PBSからの前記レーザ光が一端面に入射され、
前記PBSは、前記ミラーにより反射された前記レーザ光を前記長手方向に通過させ、
前記光検出器は、前記PBSに対して前記長手方向に配置され、前記PBSからの前記レーザ光を入射する、
ことを特徴とする請求項2に記載の表面電位分布計測装置。 - 前記固定子コイルエンドの両端部のうちの、前記回転電機の固定子コアに接している端部を第1位置とし、その他端部を第2位置とした場合、前記試験箇所は、前記第1位置から前記長手方向に延びる距離を表し、
前記表面電位測定処理において、前記ミラーの裏面に対して、前記第1位置から前記第2位置まで各々異なる位置に前記試験箇所が設けられたときに、前記演算部は、各々異なる前記試験箇所と、前記ミラーの裏面に前記試験箇所が設けられたときに特定される前記電界緩和システムの前記表面電位との関係を示す試験箇所対表面電位特性を生成する、
ことを特徴とする請求項1ないし請求項3のいずれか一項に記載の表面電位分布計測装置。 - 表面電位測定データベース、をさらに具備し、
前記表面電位測定処理において、前記ミラーの裏面に対して、前記第1位置から前記第2位置まで各々異なる位置に前記試験箇所が設けられたときに、前記演算部は、各々異なる前記試験箇所とそのときの前記電界緩和システムの前記表面電位とを前記表面電位測定データベースに格納し、前記試験箇所対表面電位特性を生成する、
ことを特徴とする請求項4に記載の表面電位分布計測装置。 - 前記表面電位測定処理において、前記演算部は、前記試験箇所対表面電位特性を出力装置に出力する、
ことを特徴とする請求項4または請求項5に記載の表面電位分布計測装置。 - 前記表面電位測定処理において、前記演算部は、前記試験箇所対表面電位特性から、各々異なる前記試験箇所のうちの、第1試験箇所と第2試験箇所との2点間における電界を算出する、
ことを特徴とする請求項4ないし請求項6のいずれか一項に記載の表面電位分布計測装置。 - 隣接する前記電界緩和システムである第1電界緩和システムおよび第2電界緩和システムに対して前記表面電位測定処理が行われたとき、前記演算部は、同一の前記試験箇所において、前記第1電界緩和システムの前記表面電位と前記第2電界緩和システムの前記表面電位との電位差である表面電位差を算出する、
ことを特徴とする請求項1ないし請求項7のいずれか一項に記載の表面電位分布計測装置。 - 前記ポッケルス結晶の一端面は接地されている、
ことを特徴とする請求項1ないし請求項8のいずれか一項に記載の表面電位分布計測装置。 - 前記ポッケルス結晶は、BGO結晶である、
ことを特徴とする請求項1ないし請求項9のいずれか一項に記載の表面電位分布計測装置。 - 回転電機の固定子コイルの端部である固定子コイルエンドに施された電界緩和システムの表面電位を計測する表面電位分布計測方法であって、
レーザによりレーザ光をポッケルス結晶の一端面から他端面に向かって出射するステップと、
その表面が前記ポッケルス結晶の他端面に設けられたミラーにより、前記ポッケルス結晶の一端面から入射された前記レーザ光を入射方向とは反対方向に反射するステップと、
インバータパルス電圧の高周波成分に追従する帯域を有する光検出器により、前記ミラーにより反射された前記レーザ光を入射して、前記レーザ光の光強度として、前記ポッケルス結晶の一端面と他端面との間の電位差である出力電圧に対応する検出光強度を検出するステップと、
試験前に行われる電圧校正処理において、前記ミラーの裏面に対して各々異なる入力電圧が印加されたときに、各々異なる前記入力電圧と前記ミラーの裏面に前記入力電圧が印加されたときの前記ポッケルス結晶の前記出力電圧との関係を示す入力電圧対出力電圧特性を電圧校正データベースに格納するステップと、
試験時に行われる表面電位測定処理において、前記ミラーの裏面に前記電界緩和システムの表面の一部が試験箇所として配置された場合に、前記固定子コイルに電圧が印加されたときの前記ポッケルス結晶の前記出力電圧を試験時出力電圧とし、前記電圧校正データベースに格納された前記入力電圧対出力電圧特性から、前記試験時出力電圧に対応する入力電圧を前記電界緩和システムの表面電位として特定するステップと、
を具備することを特徴とする表面電位分布計測方法。
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