WO2013071925A3 - Verfahren zur herstellung einer solarzelle mit pecvd-kombinationsschicht und solarzelle mit pecvd-kombinationsschicht - Google Patents

Verfahren zur herstellung einer solarzelle mit pecvd-kombinationsschicht und solarzelle mit pecvd-kombinationsschicht Download PDF

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Publication number
WO2013071925A3
WO2013071925A3 PCT/DE2012/100347 DE2012100347W WO2013071925A3 WO 2013071925 A3 WO2013071925 A3 WO 2013071925A3 DE 2012100347 W DE2012100347 W DE 2012100347W WO 2013071925 A3 WO2013071925 A3 WO 2013071925A3
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WIPO (PCT)
Prior art keywords
solar cell
pecvd
combination layer
plasma
amorphous
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PCT/DE2012/100347
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English (en)
French (fr)
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WO2013071925A2 (de
Inventor
Roman Petres
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International Solar Energy Research Center Konstanz E.V.
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Application filed by International Solar Energy Research Center Konstanz E.V. filed Critical International Solar Energy Research Center Konstanz E.V.
Publication of WO2013071925A2 publication Critical patent/WO2013071925A2/de
Publication of WO2013071925A3 publication Critical patent/WO2013071925A3/de

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868Passivation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Sustainable Development (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Sustainable Energy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Zur Passivierung des kristallinen Siliziumsubstrats (101, 201) einer Solarzelle (100, 200) mit Basis (102, 202) und Emitter (103, 203) wird eine Kombinationsschicht (105, 205) mit den folgenden Schritten gebildet : Durchführung einer Plasmanitrierung oder einer Plasmaoxinitrierung in einem Plasma aus NH3, N2O oder einer Mischung dieser Gase zur Erzeugung eines Basisfilms (105a, 205a) aus amorphem SiNx oder amorphem SiOxNy; und unverzügliche Durchführung eines unmittelbar an die Plasmanitrierung oder Plasmaoxinitrierung anschließenden PECVD-Prozesses unter Verwendung mindestens eines siliziumhaltigen Prozessgases zum Abscheiden einer Siliziumdeckschicht (105b, 205b) aus amorphem SiNx, amorphem SiCxNy oder amorphem SiOxNy.
PCT/DE2012/100347 2011-11-15 2012-11-14 Verfahren zur herstellung einer solarzelle mit pecvd-kombinationsschicht und solarzelle mit pecvd-kombinationsschicht WO2013071925A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011086351.6 2011-11-15
DE102011086351A DE102011086351A1 (de) 2011-11-15 2011-11-15 Verfahren zur Herstellung einer Solarzelle mit PECVD-Kombinationsschicht und Solarzelle mit PECVD-Kombinationsschicht

Publications (2)

Publication Number Publication Date
WO2013071925A2 WO2013071925A2 (de) 2013-05-23
WO2013071925A3 true WO2013071925A3 (de) 2014-03-20

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DE (1) DE102011086351A1 (de)
WO (1) WO2013071925A2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024979A (zh) * 2016-06-21 2016-10-12 苏天平 一种减反射膜的制备方法
CN110085686A (zh) * 2019-05-06 2019-08-02 苏州腾晖光伏技术有限公司 一种双面太阳能电池及其制备方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO341687B1 (no) * 2013-11-19 2017-12-18 Inst Energiteknik Passiveringssabel på en solcelle av krystallinsk silisium
KR101846444B1 (ko) * 2017-01-13 2018-04-06 엘지전자 주식회사 태양 전지
DE102017116419A1 (de) * 2017-07-20 2019-01-24 International Solar Energy Research Center Konstanz E.V. Verfahren zur Herstellung von PERT Solarzellen
CN110931601A (zh) * 2019-11-27 2020-03-27 通威太阳能(安徽)有限公司 一种改善晶体硅太阳能电池抗pid性能的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100029038A1 (en) * 2006-11-22 2010-02-04 Tokyo Electron Limited Manufacturing method of solar cell and manufacturing apparatus of solar cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100029038A1 (en) * 2006-11-22 2010-02-04 Tokyo Electron Limited Manufacturing method of solar cell and manufacturing apparatus of solar cell

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BOSE M ET AL: "Effect of ammonia plasma pretreatment on the plasma enhanced chemical vapor deposited silicon nitride films", MATERIALS LETTERS, vol. 48, no. 6, 1 May 2001 (2001-05-01), NORTH HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, pages 336 - 341, XP004256774, ISSN: 0167-577X, DOI: 10.1016/S0167-577X(00)00323-2 *
PALOURA E ET AL: "SILICON NITRIDE FILMS GROWN ON SILICON BELOW 300 DEG C IN LOW POWER NITROGEN PLASMA", APPLIED PHYSICS LETTERS, vol. 49, no. 2, 14 July 1986 (1986-07-14), AMERICAN INSTITUTE OF PHYSICS, US, pages 97 - 99, XP000813692, ISSN: 0003-6951, DOI: 10.1063/1.97363 *
TAKAKURA T ET AL: "Effect of plasma pretreatment on fixed charge at the silicon nitride/silicon interface", JOURNAL OF APPLIED SCIENCE, vol. 49, 20 April 2010 (2010-04-20), pages 046502-1 - 046502-5, XP002709729 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106024979A (zh) * 2016-06-21 2016-10-12 苏天平 一种减反射膜的制备方法
CN110085686A (zh) * 2019-05-06 2019-08-02 苏州腾晖光伏技术有限公司 一种双面太阳能电池及其制备方法

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Publication number Publication date
WO2013071925A2 (de) 2013-05-23
DE102011086351A1 (de) 2013-05-16

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