WO2013061659A1

WO2013061659A1 - Vapor deposition device

Info

Publication number: WO2013061659A1
Application number: PCT/JP2012/068313
Authority: WO
Inventors: 喜代志安福; 坂上　英和; 弘睦小島
Original assignee: シャープ株式会社
Priority date: 2011-10-28
Filing date: 2012-07-19
Publication date: 2013-05-02
Also published as: TW201317384A; JP2013098233A

Abstract

This vapor deposition device is equipped with: a susceptor (120) that has multiple areas on the top surface and on which a substrate to be treated (10) is mounted; and a gas supply unit (130) that faces the susceptor (120) and respectively supplies multiple material gases to the multiple areas. In addition, the vapor deposition device is equipped with: multiple gas-branching mechanisms for branching the multiple material gases in the same number as that of the multiple areas according to predetermined branching ratios, and for introducing the branched material gases to the gas supply unit (130) according to predetermined flow rates; multiple mixing pipes for mixing multiple predetermined material gases among the multiple material gases, said mixing pipes being respectively connected to the multiple gas-branching mechanisms; and a control unit (190) for controlling the multiple gas-branching mechanisms. The control unit (190) sets the respective predetermined branching ratios for the multiple gas-branching mechanisms, thereby regulating the flow rates of the multiple material gases to be respectively supplied to the aforementioned multiple areas.

Description

Vapor growth equipment

The present invention relates to a vapor phase growth apparatus for forming a film on a substrate to be processed using a plurality of material gases.

Light emitting diodes, semiconductor lasers, solar power devices for space, and high-speed devices are manufactured by MOCVD (Metal Organic Chemical Vapor Deposition) using compound semiconductor materials.

In the MOCVD method, an organic metal gas such as trimethylgallium (TMG) or trimethylaluminum (TMA) and a hydrogen compound gas such as ammonia (NH ₃ ), phosphine (PH ₃ ), or arsine (AsH ₃ ) are formed into a film. Used as a contributing material gas.

The MOCVD method is a method in which a compound semiconductor crystal is grown on a substrate to be processed by introducing the above material gas into a film forming chamber together with a carrier gas and heating it to cause a gas phase reaction on the substrate to be processed.

It is known that when a desired thin film is formed by MOCVD, the surface reaction caused on the surface of the substrate to be processed by the reactive material gas has an extremely complicated mechanism. That is, a large number of parameters contribute to the surface reaction, such as the temperature, flow velocity, pressure of the material gas, the type of active chemical species contained in the material gas, the residual gas component in the reaction system, and the temperature of the substrate to be processed. Therefore, it is extremely difficult to form a desired thin film by controlling these parameters by MOCVD.

As a prior document disclosing the configuration of the reactor used in the MOCVD method, there is JP-T-2007-521633 (Patent Document 1). In the reactor described in Patent Document 1, gases directed toward the substrate at different radial distances from the rotation axis of the rotating disk have substantially the same velocity. The gas going to the part of the disk away from the axis contains a higher concentration of reaction gas than the gas going to the part near the axis.

As a prior document disclosing a compound semiconductor manufacturing apparatus, there is JP-A-6-295862 (Patent Document 2). In the compound semiconductor manufacturing apparatus described in Patent Document 2, a group V gas, a group III gas, and an impurity gas are introduced into a reaction tube using independent pipes, and the flow rate is controlled by a needle valve.

Special table 2007-521633 JP-A-6-295862

A vapor phase growth apparatus for processing by the MOCVD method is required to improve material yield and processing capability in order to suppress the manufacturing cost while improving the quality of the compound semiconductor crystal. Therefore, the vapor phase growth apparatus has been increased in size so that as many substrates as possible having a large diameter can be processed at a high quality in a lump.

In a large-scale vapor phase growth apparatus, in order to process a large number of substrates to be processed with a large diameter, a susceptor on which the substrate to be processed is placed becomes large. Further, in order to improve the processing capability, the substrate to be processed is spread and processed from the center to the end of the large susceptor. Therefore, it is necessary to grow a compound semiconductor crystal having a uniform film thickness and film characteristics on each of a plurality of substrates to be processed placed on a large susceptor.

In order to grow a compound semiconductor crystal having a uniform film thickness and film characteristics, it is necessary to adjust the mixing ratio and flow rate of the material gas for each of a plurality of regions on a large susceptor.

The present invention has been made in view of the above-described problems, and an object thereof is to provide a vapor phase growth apparatus capable of adjusting the mixing ratio and flow rate of material gases for each of a plurality of regions on a susceptor.

A vapor phase growth apparatus according to the present invention includes a susceptor having a plurality of regions on an upper surface, a gas supply unit facing the susceptor and supplying a plurality of material gases to each of the plurality of regions. With. Further, the vapor phase growth apparatus includes a plurality of gas branching mechanisms for branching a plurality of material gases at a predetermined branching ratio by the number of the plurality of regions and introducing them into the gas supply unit at a predetermined flow rate, and a plurality of materials A plurality of predetermined material gases in the gas are mixed, a plurality of mixing pipes connected to the plurality of gas branching mechanisms, respectively, and a control unit that controls the plurality of gas branching mechanisms. The controller adjusts the flow rates of the plurality of material gases supplied in each of the plurality of regions by setting the predetermined branching ratio of each of the plurality of gas branching mechanisms.

In one embodiment of the present invention, the control unit is configured to control the flow of the plurality of material gases from the flow rates of the plurality of material gases supplied in each of the plurality of regions and the flow rates of some of the material gases. An arithmetic unit for calculating the flow rate of the remaining material gas is included. The control unit adjusts the flow rate of the remaining material gas by each of the plurality of gas branching mechanisms based on the calculation result of the calculation unit, and sets the flow rate of the plurality of material gases supplied to each of the plurality of regions. Maintain a predetermined flow rate.

In one embodiment of the present invention, the vapor phase growth apparatus further includes a film thickness detection mechanism that detects the film thickness of the film formed on the substrate to be processed. The control unit adjusts the predetermined branching ratio of each of the plurality of gas branching mechanisms and adjusts the predetermined flow rate based on the film thickness detection signal input from the film thickness detection mechanism.

According to the present invention, the mixing ratio and flow rate of the material gas can be adjusted for each of a plurality of regions on the susceptor.

It is sectional drawing which shows a part of structure of the MOCVD apparatus which concerns on one Embodiment of this invention. It is the figure which looked at the shower plate from the lower part. It is a systematic diagram which shows the structure of the mixing piping and gas branch mechanism of the MOCVD apparatus which concerns on the same embodiment. It is a block diagram regarding the control part of the MOCVD apparatus which concerns on the same embodiment. It is a flowchart which shows the flow volume calculation process in gas branching mechanism A5 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in gas branching mechanism B5 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the gas branch mechanism G5 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the gas branch mechanism H5 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the gas branch mechanism C5 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the gas branch mechanism D5 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the massflow controller E1 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the massflow controller E2 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the massflow controller F1 by the calculating part of a control part. It is a flowchart which shows the flow volume calculation process in the massflow controller F2 by the calculating part of a control part.

Hereinafter, a vapor phase growth apparatus according to an embodiment of the present invention will be described. In the following description of the embodiments, the same or corresponding parts in the drawings are denoted by the same reference numerals, and the description thereof will not be repeated. A vertical showerhead type MOCVD apparatus will be described as an example of a vapor phase growth apparatus.

FIG. 1 is a cross-sectional view showing a part of the configuration of an MOCVD apparatus according to an embodiment of the present invention. FIG. 2 is a view of the shower plate as viewed from below. FIG. 3 is a system diagram showing the configuration of the mixing piping and the gas branching mechanism of the MOCVD apparatus according to the present embodiment.

As shown in FIG. 1, an MOCVD apparatus 100 according to an embodiment of the present invention includes a film forming chamber 110 in which a substrate 10 to be processed is processed. In the film forming chamber 110, a susceptor 120 having a circular shape in plan view on which the substrate 10 to be processed is placed is disposed.

The susceptor 120 is defined in a plurality of areas. In the present embodiment, the center side region of the susceptor 120 to which the mixed gas is sprayed as shown by an arrow 20 in FIG. 1 from the shower head 130 to be described later, and the susceptor 120 to which the mixed gas is sprayed as shown by the arrow 30. Two regions are defined, the marginal region.

However, the plurality of regions is not limited to this, and depending on various conditions such as the size of the susceptor 120, the arrangement of the plurality of substrates to be processed 10 placed on the susceptor 120, and the position of a gas exhaust unit 141 described later, It is appropriately determined in consideration of the crystal growth of the compound semiconductor on the substrate 10 to be processed.

Below the susceptor 120, a heater 121 having a circular shape in plan view is disposed. The heater 121 is disposed on a support base 151 having a circular shape in plan view. One end of the rotating shaft 150 is connected to the lower part of the center of the support base 151. An actuator (not shown) is connected to the other end of the rotating shaft 150, and the rotating shaft 150 is rotatable about the axis. The centers of the susceptor 120, the heater 121, and the support base 151 are located on the central axis of the rotating shaft 150.

A heater cover 152 is provided so as to cover the peripheral side surfaces of the susceptor 120, the heater 121, and the support base 151. The MOCVD apparatus 100 includes a susceptor 120, a heater 121, a support base 151, and a heater cover 152.

In the upper part of the film forming chamber 110, a shower head 130 is provided, which is a gas supply unit that supplies a plurality of material gases onto the substrate 10 to be processed, facing the susceptor 120. The shower head 130 includes a shower plate 131, a water cooling part 132, and a hollow part 133.

As shown in FIG. 2, the shower plate 131 has a plurality of openings 131a for spraying a mixed gas onto the substrate 10 to be processed. Of the plurality of openings 131a, the mixed gas is sprayed from the opening 131a located in the center side area 20a of the shower plate 131 to the center side area on the susceptor 120 described above. Moreover, mixed gas is sprayed on the edge side area | region on the susceptor 120 mentioned above from the opening 131a located in the edge side area | region 30a of the shower plate 131 among several opening 131a. As shown in FIG. 1, the lower surface of the shower plate 131 faces the upper surface of the susceptor 120 in parallel.

The water cooling part 132 is a part through which cooling water for cooling the shower head 130 circulates. Cooling water is supplied to the water cooling unit 132 from a water cooling device 160 including a pump, a water supply source, and a cooling source through a cooling pipe 161.

A plurality of mixing pipes, which will be described later, are connected to the hollow portion 133. The interior of the hollow portion 133 communicates with the plurality of mixing pipes and the plurality of openings 131 a of the shower plate 131. The MOCVD apparatus 100 includes a shower head 130.

The MOCVD apparatus 100 includes a gas exhaust part 141 for exhausting the inside of the film forming chamber 110, a purge line 142 connected to the gas exhaust part 141, and an exhaust gas treatment apparatus 140 connected to the purge line 142. Including.

As a result, the mixed gas introduced into the film forming chamber 110 is exhausted to the outside of the film forming chamber 110 by the gas exhaust unit 141, and the exhausted mixed gas is sent to the exhaust gas treatment device 140 through the purge line 142. In the exhaust gas treatment device 140, it is rendered harmless.

When forming a thin film on the substrate 10 to be processed by the MOCVD apparatus 100 according to this embodiment, a mixed gas is supplied from the shower head 130 into the film forming chamber 110. At this time, the substrate to be processed 10 is heated by the heater 121 through the rotating susceptor 120. When a chemical reaction occurs on the heated substrate 10 to be processed, a thin film is formed on the substrate 10 to be processed. The mixed gas that has passed over the substrate 10 is exhausted from the gas exhaust part 141.

Hereinafter, a piping system for sending a plurality of mixed gases to the shower head 130 included in the MOCVD apparatus 100 will be described.

In the MOCVD apparatus 100 according to the present embodiment, a group III material gas containing a group III element and a group V material containing a group V element are used as a plurality of material gases for forming a compound semiconductor thin film on the substrate 10 to be processed. A gas and a doping material gas containing an impurity element are used. However, the plurality of material gases is not limited to this, and for example, a group II material gas containing a group II element, a group VI material gas containing a group VI element, and a doping material gas containing an impurity element may be used.

Examples of group III elements include Ga (gallium), Al (aluminum), and In (indium). As the group III material gas, for example, an organometallic gas such as trimethylgallium (TMG) or trimethylaluminum (TMA) can be used.

Examples of group V elements include N (nitrogen), P (phosphorus), and As (arsenic). As the group V material gas, for example, a hydrogen compound gas such as ammonia (NH ₃ ), phosphine (PH ₃ ), or arsine (AsH ₃ ) can be used.

Examples of the impurity element include Mg (magnesium) and Si (silicon). As the doping material gas, Cp ₂ Mg (bis-cyclopentadienyl Mg) gas or SiH ₄ gas can be used.

As shown in FIG. 1, the MOCVD apparatus 100 includes a group III-based mixed gas edge supply source 170 serving as a supply source of a group III-based mixed gas containing a group III material gas in the edge region of the susceptor 120. In addition, the MOCVD apparatus 100 includes a V group mixed gas edge supply source 171 serving as a supply source of a V group mixed gas containing a V group material gas in an edge side region of the susceptor 120.

In addition, the MOCVD apparatus 100 includes a group III mixed gas central supply source 172 serving as a supply source of a group III mixed gas containing a group III material gas in the central region of the susceptor 120. In addition, the MOCVD apparatus 100 includes a V group mixed gas edge supply source 173 serving as a supply source of a V group mixed gas containing a V group material gas in a central region of the susceptor 120.

The group III-based mixed gas edge supply source 170 is connected to the shower head 130 by a group III-based edge mixing pipe 170a to which a mass flow controller 170c, which is a flow rate adjusting mechanism, is connected. The V group mixed gas edge supply source 171 is connected to the shower head 130 by a V group edge mixing pipe 171a to which a mass flow controller 171c is connected.

The III group mixed gas center side supply source 172 is connected to the shower head 130 by a III group center side mixing pipe 172a to which a mass flow controller 172c is connected. The group V mixed gas center side supply source 173 is connected to the shower head 130 by a group V center side mixed piping 173a to which the mass flow controller 173c is connected.

The MOCVD apparatus 100 includes a control unit 190 that controls all mass flow controllers included in the MOCVD apparatus 100. The control unit 190 is connected to the group III mixed gas edge supply source 170 by the wiring 191, is connected to the group V mixed gas edge supply source 171 by the wiring 192, and is connected to the group III mixed gas center supply source 172 by the wiring 193. And is connected to the V group mixed gas center supply source 173 by a wiring 194.

All the mass flow controllers that adjust the flow rate of the mixed gas in the group III-based mixed gas edge supply source 170 are connected to the control unit 190 through the group III-based mixed gas edge supply source 170 by wiring not shown.

All the mass flow controllers for adjusting the flow rate of the mixed gas in the V group mixed gas edge supply source 171 are connected to the control unit 190 through the V group mixed gas edge supply source 171 by wiring not shown.

All the mass flow controllers that adjust the flow rate of the mixed gas in the group III-based mixed gas center-side supply source 172 are connected to the control unit 190 through the group-III-based mixed gas center-side supply source 172 by wiring (not shown).

All the mass flow controllers for adjusting the flow rate of the mixed gas in the V group mixed gas center supply source 173 are connected to the control unit 190 through the V group mixed gas center supply source 173 by wiring not shown.

Moreover, the MOCVD apparatus 100 according to the present embodiment includes a film thickness sensor 196 that is a film thickness detection mechanism that detects the film thickness of the film formed on the substrate 10 to be processed. The film thickness sensor 196 is connected to the control unit 190 through a wiring 195.

As shown in FIG. 3, the MOCVD apparatus 100 includes a carrier gas supply source 180, a first group III material gas supply source 181, a second group III material gas supply source 182, a first group V material gas supply source 183, and a second group V material gas. A supply source 184, a first doping material gas supply source 185, and a second doping material gas supply source 186 are provided.

The carrier gas supply source 180 supplies, for example, H ₂ gas as the carrier gas. The carrier gas supply source 180 is connected to the carrier line 180a. The carrier line 180a is connected to the mass flow controllers A1, A2, B1, B2, C2, D2, G1, G2, H1, and H2.

The carrier line 180a is connected to the carrier line 180b and the carrier line 180c. The carrier line 180b is branched into a group III system side mixing pipe 170b to which the mass flow controller E1 is connected and a group III system center side mixing pipe 172b to which the mass flow controller E2 is connected.

The carrier line 180c is branched into a group V system side mixing pipe 171b to which the mass flow controller F1 is connected and a group V system center side mixing pipe 173b to which the mass flow controller F2 is connected.

1st group III material gas supply source 181 supplies TMG gas, for example. The group III material gas supply source 181 is connected to a bubbling device. The introduction side of the bubbling device is connected to a carrier line to which the mass flow controller A1 is connected via a valve. The outlet side of the bubbling device is connected to a carrier line to which the mass flow controller A2 is connected via a valve.

The carrier line to which the mass flow controller A2 is connected is branched by a gas branch mechanism A5 provided with a mass flow controller A3 and a mass flow controller A4 of a slightly differential pressure specification. The side to which the mass flow controller A3 is connected is connected to the group III system side mixing pipe 170b. The side to which the mass flow controller A4 is connected is connected to the group III system center side mixing pipe 172b.

2nd group III material gas supply source 182 supplies TMA gas, for example. The Group III material gas supply source 182 is connected to a bubbling device. The introduction side of the bubbling device is connected to a carrier line to which the mass flow controller B1 is connected via a valve. The outlet side of the bubbling device is connected to a carrier line to which the mass flow controller B2 is connected via a valve.

The carrier line to which the mass flow controller B2 is connected is branched by a gas branching mechanism B5 including a mass flow controller B3 and a mass flow controller B4 having a slightly differential pressure specification. The side to which the mass flow controller B3 is connected is connected to the group III system side mixing pipe 170b. The side to which the mass flow controller B4 is connected is connected to the group III system center side mixing pipe 172b.

The first doping material gas supply source 185 supplies, for example, Cp ₂ Mg gas. The first doping material gas supply source 185 is connected to a bubbling device. The introduction side of this bubbling device is connected to a carrier line to which the mass flow controller G1 is connected via a valve. The outlet side of the bubbling device is connected to a carrier line to which the mass flow controller G2 is connected via a valve.

The carrier line to which the mass flow controller G2 is connected is branched by a gas branch mechanism G5 provided with a mass flow controller G3 and a mass flow controller G4 having a differential pressure specification. The side to which the mass flow controller G3 is connected is connected to the group III system side mixing pipe 170b. The side to which the mass flow controller G4 is connected is connected to the group III system center side mixing pipe 172b.

The second doping material gas supply source 186 supplies, for example, SiH ₄ gas. The second doping material gas supply source 186 is connected to the bubbling device. The introduction side of the bubbling device is connected to a carrier line to which the mass flow controller H1 is connected via a valve. The outlet side of the bubbling device is connected to a carrier line to which the mass flow controller H2 is connected via a valve.

The carrier line to which the mass flow controller H2 is connected is branched by a gas branch mechanism H5 provided with a mass flow controller H3 and a mass flow controller H4 having a slightly differential pressure specification. The side to which the mass flow controller H3 is connected is connected to the group III system side mixing pipe 170b. The side to which the mass flow controller H4 is connected is connected to the group III system center side mixing pipe 172b.

The first group V material gas supply source 183 supplies, for example, NH ₃ gas. The first group V material gas supply source 183 is connected to one end of a pipe to which the mass flow controller C1 is connected. The other end of the pipe is connected to a carrier line to which the mass flow controller C2 is connected.

The carrier line to which the mass flow controller C2 is connected is branched by a gas branch mechanism C5 provided with a mass flow controller C3 and a mass flow controller C4 having a slightly differential pressure specification. The side to which the mass flow controller C3 is connected is connected to the V group system side mixing pipe 171b. The side to which the mass flow controller C4 is connected is connected to the V group center side mixing pipe 173b.

The 2V group material gas supply source 184, for example, supplying AsH ₃ gas. The second group V material gas supply source 184 is connected to one end of a pipe to which the mass flow controller D1 is connected. The other end of the pipe is connected to a carrier line to which the mass flow controller D2 is connected.

The carrier line to which the mass flow controller D2 is connected is branched by a gas branch mechanism D5 provided with a mass flow controller D3 and a mass flow controller D4 of a slightly differential pressure specification. The side to which the mass flow controller D3 is connected is connected to the V group system side mixing pipe 171b. The side to which the mass flow controller D4 is connected is connected to the V group center side mixing pipe 173b.

Hereinafter, a method for supplying each material gas and a method for adjusting the flow rate will be described. FIG. 4 is a block diagram relating to the control unit of the MOCVD apparatus according to the present embodiment. FIG. 5 is a flowchart showing a flow rate calculation process in the gas branch mechanism A5 by the calculation unit of the control unit. FIG. 6 is a flowchart showing a flow rate calculation process in the gas branching mechanism B5 by the calculation unit of the control unit. FIG. 7 is a flowchart showing a flow rate calculation process in the gas branch mechanism G5 by the calculation unit of the control unit.

FIG. 8 is a flowchart showing a flow rate calculation process in the gas branching mechanism H5 by the calculation unit of the control unit. FIG. 9 is a flowchart showing a flow rate calculation process in the gas branch mechanism C5 by the calculation unit of the control unit. FIG. 10 is a flowchart showing a flow rate calculation process in the gas branch mechanism D5 by the calculation unit of the control unit.

As shown in FIG. 4, the control unit 190 includes an input unit 190A to which a signal sent from an external device such as a film thickness sensor 196 is input, and a calculation unit 190B that calculates a gas flow rate. The control unit 190 appropriately reads a program from the storage unit 190C in which a crystal growth sequence creation program for setting the gas flow rate is recorded, and calculates the gas flow rate in the calculation unit 190B.

The control unit 190 controls the gas branching mechanisms A5, B5, C5, D5, G5, and H5 by outputting a flow rate adjustment signal to each of the mass flow controllers A1 to H4 based on the calculation result of the calculation unit 190B. Adjust.

As shown in FIG. 3, the carrier gas is introduced into the bubbling device by the mass flow controller A1, and TMG gas is generated by bubbling in the cylinder. The amount of TMG gas generated is determined by the flow rate of the carrier gas introduced from the mass flow controller A1.

The generated TMG gas is mixed with the carrier gas sent from the mass flow controller A2. The concentration and total flow rate of the TMG gas are determined by the flow rate of the carrier gas sent from the mass flow controller A2.

A part of the TMG gas mixed with the carrier gas is flow-controlled by the mass flow controller A3 and sent to the group III system side mixing pipe 170b. The remaining part of the TMG gas mixed with the carrier gas is flow-controlled by the mass flow controller A4 and sent to the group III system central mixing pipe 172b.

The flow rate adjustment for TMG gas is performed as follows. As shown in FIG. 5, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism A5 to a predetermined fixed value Sa5 (slm) (T10). Next, the flow rate in the mass flow controller A1 is set to Sa1 (slm) (T11). As a result, the flow rate Sa2 (slm) in the mass flow controller A2 is calculated as Sa5-Sa1 (T12). Based on the calculation result, the flow rate is adjusted by the mass flow controller A2.

Similarly, part of the TMA gas mixed with the carrier gas is flow-controlled by the mass flow controller B3 and sent to the group III system side mixing pipe 170b. The remainder of the TMA gas mixed with the carrier gas is flow-controlled by the mass flow controller B4 and sent to the group III system central mixing pipe 172b.

The flow rate adjustment for TMA gas is performed as follows. As shown in FIG. 6, the calculation unit 190B sets the gas inflow amount to the gas branch mechanism B5 to a predetermined fixed value Sb5 (slm) (T20). Next, the flow rate in the mass flow controller B1 is set to Sb1 (slm) (T21). As a result, the flow rate Sb2 (slm) in the mass flow controller B2 is calculated as Sb5-Sb1 (T22). Based on the calculation result, the flow rate is adjusted by the mass flow controller B2.

A part of the Cp ₂ Mg gas mixed with the carrier gas is flow-controlled by the mass flow controller G3 and sent to the group III system side mixing pipe 170b. The remainder of the Cp ₂ Mg gas mixed with the carrier gas is flow-controlled by the mass flow controller G4 and sent to the group III system center side mixing pipe 172b.

The flow rate adjustment for Cp ₂ Mg gas is performed as follows. As shown in FIG. 7, the calculation unit 190B sets the gas inflow amount to the gas branch mechanism G5 to a predetermined fixed value Sg5 (slm) (T30). Next, the flow rate in the mass flow controller G1 is set to Sg1 (slm) (T31). As a result, the flow rate Sg2 (slm) in the mass flow controller G2 is calculated as Sg5-Sg1 (T32). Based on the calculation result, the flow rate is adjusted by the mass flow controller G2.

A part of the SiH ₄ gas mixed with the carrier gas is flow-controlled by the mass flow controller H3 and sent to the group III system side mixing pipe 170b. The remaining portion of the SiH ₄ gas mixed with the carrier gas is flow-controlled by the mass flow controller H4 and sent to the group III system center side mixing pipe 172b.

The flow rate adjustment for the SiH ₄ gas is performed as follows. As shown in FIG. 8, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism H5 to a predetermined fixed value Sh5 (slm) (T40). Next, the flow rate in the mass flow controller H1 is set to Sh1 (slm) (T41). As a result, the flow rate Sh2 (slm) in the mass flow controller H2 is calculated as Sh5-Sh1 (T42). Based on the calculation result, the flow rate is adjusted by the mass flow controller H2.

In this way, a plurality of group III-based material gases and a plurality of doping material gases are mixed in each of the group III-based edge side mixing piping 170b and the group III-based center side mixing piping 172b.

Furthermore, the flow rate of the carrier gas is controlled by the mass flow controller E1, and the carrier gas is sent to the group III system side mixing pipe 170b. The total flow rate of the mixed gas reaching the group III mixed gas edge supply source 170 is determined by the flow rate of the carrier gas sent from the mass flow controller E1.

The carrier gas is flow-controlled by the mass flow controller E2 and sent to the group III system central mixing pipe 172b. The total flow rate of the mixed gas reaching the group III mixed gas central supply source 172 is determined by the flow rate of the carrier gas sent from the mass flow controller E2.

FIG. 11 is a flowchart showing a flow rate calculation process in the mass flow controller E1 by the calculation unit of the control unit. FIG. 12 is a flowchart showing a flow rate calculation process in the mass flow controller E2 by the calculation unit of the control unit.

The flow rate adjustment in the mass flow controller E1 is performed as follows. As shown in FIG. 11, the calculation unit 190B sets the total flow rate of the group III-based mixed gas edge supply source 170 to a predetermined fixed value S30 (slm) (T100). Next, the calculation unit 190B sets the branching ratio of the material gas in each gas branching mechanism to a predetermined branching ratio. The calculation unit 190B calculates the carrier gas flow rate from the total flow rate of each material gas branched according to the branching ratio. The branching ratio is a ratio sent to the edge side mixed pipe.

Specifically, the calculation unit 190B sets the branching ratio of the gas branching mechanism A5 to Ra5 (%) (T110). The calculation unit 190B uses the gas inflow amount Sa5 (slm) to the gas branching mechanism A5 that has already been set in the T10 step to calculate the flow rate Sa3 (slm) of the TMG gas sent to the group III system side mixing pipe 170b as Sa5 ×. Calculated as Ra5 / 100 (T111).

Similarly, the calculation unit 190B sets the branching ratio of the gas branching mechanism B5 to Rb5 (%) (T120). The calculation unit 190B uses the gas inflow amount Sb5 (slm) to the gas branch mechanism B5 that has already been set in the T20 step, and calculates the flow rate Sb3 (slm) of the TMA gas sent to the group III system side mixing pipe 170b as Sb5 × Calculated as Rb5 / 100 (T121).

Similarly, the calculation unit 190B sets the branching ratio of the gas branching mechanism G5 to Rg5 (%) (T130). The calculation unit 190B uses the gas inflow amount Sg5 (slm) to the gas branch mechanism G5 that has already been set in the T30 step to calculate the flow rate Sg3 (slm) of the Cp ₂ Mg gas sent to the group III system side mixing pipe 170b. Calculated as Sg5 × Rg5 / 100 (T131).

Similarly, the calculation unit 190B sets the branching ratio of the gas branching mechanism H5 to Rh5 (%) (T140). The calculation unit 190B uses the gas inflow amount Sh5 (slm) to the gas branch mechanism H5 that has already been set in the T40 step, and sets the flow rate Sh3 (slm) of the SiH ₄ gas sent to the group III system side mixing pipe 170b to Sh5. * Calculated as Rh5 / 100 (T141).

The calculation unit 190B calculates the flow rate Se1 (slm) in the mass flow controller E1 as S30− (Sa3 + Sb3 + Sg3 + Sh3) using the total flow rate of the calculated material gases (Sa3 + Sb3 + Sg3 + Sh3) (T150). Based on this calculation result, the flow rate is adjusted by the mass flow controller E1.

Similarly, the flow rate adjustment in the mass flow controller E2 is performed as follows. As shown in FIG. 12, the calculation unit 190B sets the total flow rate of the group III mixed gas center-side supply source 172 to a predetermined fixed value S30a (slm) (T200).

The calculation unit 190B uses the branching ratio of the gas branching mechanism A5 set in the T110 step and the gas inflow amount Sa5 (slm) to the gas branching mechanism A5 already set in the T10 step. The flow rate Sa4 (slm) of the TMG gas sent to the mixing pipe 172b is calculated as Sa5 × (1-Ra5 / 100) (T211).

Similarly, the calculation unit 190B uses the branching ratio of the gas branching mechanism B5 set in the T120 step and the gas inflow amount Sb5 (slm) to the gas branching mechanism B5 already set in the T20 step. The flow rate Sb4 (slm) of the TMA gas sent to the system center side mixing pipe 172b is calculated as Sb5 × (1-Rb5 / 100) (T221).

Similarly, the calculation unit 190B uses the branching ratio of the gas branching mechanism G5 set in the T130 step and the gas inflow amount Sg5 (slm) to the gas branching mechanism G5 already set in the T30 step. The flow rate Sg4 (slm) of the Cp ₂ Mg gas sent to the system center side mixing pipe 172b is calculated as Sg5 × (1-Rg5 / 100) (T231).

Similarly, the calculation unit 190B uses the branch ratio of the gas branch mechanism H5 set in the T140 step and the gas inflow amount Sh5 (slm) to the gas branch mechanism H5 already set in the T40 step, to calculate the group III The flow rate Sh4 (slm) of the SiH ₄ gas sent to the system center side mixing pipe 172b is calculated as Sh5 × (1−Rh5 / 100) (T241).

The calculation unit 190B calculates the flow rate Se2 (slm) in the mass flow controller E2 as S30a− (Sa4 + Sb4 + Sg4 + Sh4) using the total flow rate of the calculated material gases (Sa4 + Sb4 + Sg4 + Sh4) (T250). Based on the calculation result, the flow rate is adjusted by the mass flow controller E2.

As shown in FIG. 3, the flow rate is adjusted by the mass flow controller C <b> 1, and NH ₃ gas is sent from the first V group material gas supply source 183. The NH ₃ gas is mixed with the carrier gas sent from the mass flow controller C2. The concentration of NH ₃ gas and the total flow rate are determined by the flow rate of the carrier gas sent from the mass flow controller C2.

A part of the NH ₃ gas mixed with the carrier gas is flow-controlled by the mass flow controller C3 and sent to the group V-system side mixing pipe 171b. The remaining portion of the NH ₃ gas mixed with the carrier gas is flow-controlled by the mass flow controller C4 and sent to the group V system center side mixing pipe 173b.

The flow rate adjustment for the NH ₃ gas is performed as follows. As shown in FIG. 9, the calculation unit 190B sets the gas inflow amount to the gas branch mechanism C5 to a predetermined fixed value Sc5 (slm) (T50). Next, the flow rate in the mass flow controller C1 is set to Sc1 (slm) (T51). As a result, the flow rate Sc2 (slm) in the mass flow controller C2 is calculated as Sc5-Sc1 (T52). Based on the calculation result, the flow rate is adjusted by the mass flow controller C2.

Similarly, a part of the AsH ₃ gas mixed with the carrier gas is flow-controlled by the mass flow controller D3 and sent to the group V system edge side mixing pipe 171b. The remaining portion of the AsH ₃ gas mixed with the carrier gas is flow-controlled by the mass flow controller D4 and sent to the group V system center side mixing pipe 173b.

The flow rate adjustment for AsH ₃ gas is performed as follows. As shown in FIG. 10, the calculation unit 190B sets the gas inflow amount to the gas branch mechanism D5 to a predetermined fixed value Sd5 (slm) (T60). Next, the flow rate in the mass flow controller D1 is set to Sd1 (slm) (T61). As a result, the flow rate Sd2 (slm) in the mass flow controller D2 is calculated as Sd5-Sd1 (T62). Based on the calculation result, the flow rate is adjusted by the mass flow controller D2.

In this way, a plurality of group V material gases are mixed in each of the group V edge-side mixing piping 171b and the group V center-side mixing piping 173b.

Furthermore, the flow rate of the carrier gas is controlled by the mass flow controller F1, and the carrier gas is sent to the group V system side mixing pipe 171b. The total flow rate of the mixed gas reaching the V group mixed gas edge supply source 171 is determined by the flow rate of the carrier gas sent from the mass flow controller F1.

The carrier gas is flow-controlled by the mass flow controller F2 and sent to the V group center side mixing pipe 173b. The total flow rate of the mixed gas that reaches the V group mixed gas center-side supply source 173 is determined by the flow rate of the carrier gas sent from the mass flow controller F2.

FIG. 13 is a flowchart showing a flow rate calculation process in the mass flow controller F1 by the calculation unit of the control unit. FIG. 14 is a flowchart showing a flow rate calculation process in the mass flow controller F2 by the calculation unit of the control unit.

The flow rate adjustment in the mass flow controller F1 is performed as follows. As illustrated in FIG. 13, the calculation unit 190B sets the total flow rate of the V group mixed gas edge supply source 171 to a predetermined fixed value S31 (slm) (T300). Next, the calculation unit 190B sets the branching ratio of the material gas in each gas branching mechanism to a predetermined branching ratio. The calculation unit 190B calculates the carrier gas flow rate from the total flow rate of each material gas branched according to the branching ratio.

Specifically, the calculation unit 190B sets the branching ratio of the gas branching mechanism C5 to Rc5 (%) (T310). The calculation unit 190B uses the gas inflow amount Sc5 (slm) to the gas branch mechanism C5 that has already been set in the T50 step to calculate the flow rate Sc3 (slm) of the TMG gas sent to the group V system side mixing pipe 171b as Sc5 × Calculated as Rc5 / 100 (T311).

Similarly, the calculation unit 190B sets the branching ratio of the gas branching mechanism D5 to Rd5 (%) (T320). The calculation unit 190B uses the gas inflow amount Sd5 (slm) to the gas branching mechanism D5 that has already been set in the T60 step to calculate the flow rate Sd3 (slm) of the TMA gas sent to the group V system side mixing pipe 171b as Sd5 × Calculated as Rd5 / 100 (T321).

The calculation unit 190B calculates the flow rate Sf1 (slm) in the mass flow controller F1 as S31− (Sc3 + Sd3) using the total flow rate (Sc3 + Sd3) of the calculated flow rates of the respective material gases (T350). Based on the calculation result, the flow rate is adjusted by the mass flow controller F1.

Similarly, the flow rate adjustment in the mass flow controller F2 is performed as follows. As shown in FIG. 14, the calculation unit 190B sets the total flow rate of the V group mixed gas center supply source 173 to a predetermined fixed value S31a (slm) (T400).

The calculation unit 190B uses the branch ratio of the gas branch mechanism C5 set in the T310 step and the gas inflow amount Sc5 (slm) to the gas branch mechanism C5 already set in the T50 step to calculate the V group center side. The flow rate Sc4 (slm) of the NH ₃ gas sent to the mixing pipe 173b is calculated as Sc5 × (1−Rc5 / 100) (T411).

Similarly, the calculation unit 190B uses the branch ratio of the gas branch mechanism D5 set in the T320 step and the gas inflow amount Sd5 (slm) to the gas branch mechanism D5 already set in the T60 step, The flow rate Sd4 (slm) of AsH ₃ gas sent to the system center side mixing pipe 173b is calculated as Sd5 × (1-Rd5 / 100) (T421).

The calculation unit 190B calculates the flow rate Sf2 (slm) in the mass flow controller F2 as S31a− (Sc4 + Sd4) using the total flow rate (Sc4 + Sd4) of the calculated flow rates of the respective material gases (T450). Based on the calculation result, the flow rate is adjusted by the mass flow controller F2.

As described above, the MOCVD apparatus 100 includes a plurality of mixing pipes that mix and introduce a predetermined plurality of material gases among the plurality of material gases into the shower head 130. In addition, the MOCVD apparatus 100 includes a plurality of gas branch mechanisms A5 and B5 for branching a plurality of material gases at a predetermined branch ratio by the number of a plurality of regions on the susceptor 120 and introducing them into the shower head 130 at a predetermined flow rate. , C5, D5, G5, and H5.

Each of the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 individually adjusts the branching ratio of each of the plurality of material gases. That is, the control unit 190 controls each of the plurality of gas branch mechanisms A5, B5, C5, D5, G5, and H5 independently of each other.

The control unit 190 sets a predetermined branching ratio for each of the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 to thereby provide a plurality of materials supplied in each of a plurality of regions on the susceptor 120. Adjust the gas flow rate.

As described above, the control unit 190 determines the plurality of material gases from the flow rates of the plurality of material gases supplied in each of the plurality of regions on the susceptor 120 and the flow rates of some of the plurality of material gases. The calculation part 190B which calculates the flow volume of the remaining material gas is included.

The control unit 190 adjusts the flow rate of the remaining material gas by each of the plurality of gas branch mechanisms A5, B5, C5, D5, G5, and H5 based on the calculation result of the calculation unit 190B. The flow rate of the plurality of material gases supplied to each of the plurality of regions can be maintained at the predetermined flow rate.

Further, the control unit 190 can maintain the total flow rate in each of the mixed gas supply sources 170 to 173 at a predetermined flow rate by adjusting the flow rate in the mass flow controllers E1, E2, F1, and F2.

In the present embodiment, each of the plurality of gas branch mechanisms A5, B5, C5, D5, G5, and H5 is configured by two mass flow controllers having a slightly differential pressure specification, but the gas branch mechanism is configured by a flow splitter. May be.

The shower head 130 sprays a plurality of mixed gases mixed in each of a plurality of mixing pipes to a plurality of regions on the susceptor 120, respectively. In each of the plurality of mixed gases, the concentration and flow rate of each of the predetermined plurality of material gases are adjusted.

Specifically, for example, by setting the flow rate ratio between the mass flow controller A3 and the mass flow controller A4 and the flow rate ratio between the mass flow controller B3 and the mass flow controller B4 to be different from each other, the Group III mixed gas edge side supply source is set. The mixing ratio of the plurality of Group III material gases in 170 and the Group III mixed gas center supply source 172 can be adjusted. Similarly, the mixing ratio of a plurality of V group material gases in the V group mixed gas edge supply source 171 and the V group mixed gas center supply source 173 can be adjusted.

Further, the flow rate ratio of the group III-based mixed gas and the group V-based mixed gas in the mixed gas sprayed to the edge region of the susceptor 120 in a state where the mixing ratio of the plurality of group III material gases is constant, The flow rate ratio between the group III-based mixed gas and the group V-based mixed gas in the mixed gas sprayed on the region can be adjusted.

Specifically, for example, the flow rates of the mass flow controllers A3, A4, B3, B4, C3, and C4 are L _A3 , L _A4 , L _B3 , L _B4 , L _C3 , and L _C4 , respectively. If L _A3 : L _A4 = L _B3 : L _B4 is satisfied and L _C3 / (L _A3 + L _B3 ) = L _C4 / (L _A4 + L _B4 ) is satisfied, the edge side area and the center side area of the susceptor 120 , The flow rate ratio of the group III-based mixed gas and the group V-based mixed gas to be sprayed can be made the same.

On the contrary, by setting L _C3 and L _C4 so as not to satisfy the above relationship, the group III-based mixed gas and the group V-based mixed gas sprayed in the edge region and the center region of the susceptor 120 The flow ratio can be made different. In addition, said relational expression prescribes | regulates the case where only one type of V group material gas is used.

As described above, in the MOCVD apparatus 100 according to the present embodiment, the mixing ratio and flow rate of the material gas can be adjusted for each of a plurality of regions on the susceptor 120. As a result, when a large number of substrates to be processed 10 having a large area are processed, all of the uniformity of the layer thickness, composition, and impurity addition amount of the grown crystals should be sufficient on the substrate 10 to be processed. it can. That is, a compound semiconductor crystal having a uniform film thickness and film characteristics can be grown on each of the plurality of substrates to be processed 10.

Further, the MOCVD apparatus 100 according to the present embodiment includes a film thickness sensor 196. The control unit 190 adjusts the predetermined branching ratio of each of the gas branching mechanisms A5, B5, C5, D5, G5, and H5 based on the film thickness detection signal input from the film thickness sensor 196, and The predetermined flow rate is adjusted.

The film thickness of the film formed on the substrate to be processed 10 depends on the amount of the group III material supplied. Therefore, when the film thickness detected by the film thickness sensor 196 is smaller than the set value, the flow rate in the mass flow controller A1 is increased to increase the amount of TMG generated. At this time, the flow rate in the mass flow controller A2 is adjusted by the control unit 190 so as to decrease by the flow rate increased in the mass flow controller A1.

By adjusting in this way, the flow rate of the TMG gas flowing into the gas branching mechanism A5 does not change, and the branching ratio in the gas branching mechanism A5 does not change, so the group III system side mixing pipe 170b and the group III system center side mixing are performed. The total flow rate of TMG gas sent to the pipe 172b is maintained. That is, the flow rate of TMG gas can be maintained while increasing the amount of TMG.

The above case is a case where the amount of TMG is changed in both the edge region and the center region on susceptor 120, and the case where the amount of TMG is changed only in either one will be described below.

For example, the case where the amount of TMG supplied is reduced only in the edge region on the susceptor 120 will be described. In order to maintain the amount of TMG supplied to the central region on the susceptor 120 while reducing the flow rate in the mass flow controller A1, the branch ratio in the gas branch mechanism A5 is changed. Specifically, the proportion of TMG gas sent to the group III center-side mixing pipe 172b is increased so that the amount of TMG supplied to the center-side region on the susceptor 120 does not change. Therefore, only the amount of TMG supplied to the edge region on the susceptor 120 is reduced.

At this time, the flow rate in the mass flow controller A2 is adjusted by the control unit 190 so as to be reduced by the flow rate increased in the mass flow controller A1. In addition, in the mass flow controllers E1 and E2, the change in the branching ratio in the gas branching mechanism A5 does not change the total flow rate of the TMG gas sent to the group III system side mixing pipe 170b and the group III system center side mixing pipe 172b. The flow rate is adjusted by the control unit 190.

With the above configuration, a plurality of materials mixed in each region at a desired mixing ratio while maintaining the flow rate of a plurality of material gases supplied to a plurality of regions on the susceptor 120 and processing under stable film forming conditions. Gas can be supplied. As a result, a compound semiconductor crystal having a uniform film thickness and film characteristics can be grown on each of the plurality of substrates to be processed 10.

The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

10 substrate to be processed, 20a center side area, 30a edge side area, 100 MOCVD apparatus, 110 film forming chamber, 120 susceptor, 121 heater, 130 shower head, 131 shower plate, 131a opening, 132 water cooling part, 133 hollow part, 140 exhaust gas Processing equipment, 141 gas exhaust section, 142 purge line, 150 rotating shaft, 151 support base, 152 heater cover, 160 water cooling device, 161 cooling pipe, 170 group III mixed gas edge supply source, 171 group V mixed gas edge side Supply source, 172 Group III mixed gas center supply source, 173 Group V mixed gas center supply source, 170a, 170b Group III edge mixing tube, 171a, 171b Group V edge mixing tube, 170c, 171c, 172c , 173c, A1, 2, A3, A4, B1, B2, B3, B4, C1, C2, C3, C4, D1, D2, D3, D4, E1, E2, F1, F2, G1, G2, G3, G4, H1, H2, H3, H4 mass flow controller, 172a, 172b Group III center side mixed piping, 173a, 173b Group V center side mixed piping, 180 carrier gas supply source, 180a, 180b, 180c carrier line, 181 Group 1 III material gas supply source 182, Group 2 III material gas supply source, 183, Group 1 V material gas supply source, 184, Group 2 V material gas supply source, 185, First doping material gas supply source, 186, Second doping material gas supply source, 190 control unit, 190A input unit, 190B calculation unit, 190C storage unit, 191, 192, 193, 194, 19 Wiring, 196 a film thickness sensor, A5, B5, C5, D5, G5, H5 gas diverter.

Claims

A susceptor (120) on which a substrate to be processed (10) is mounted and having a plurality of regions on the upper surface;
A gas supply unit (130) facing the susceptor (120) and supplying a plurality of material gases to each of the plurality of regions;
A plurality of gas branching mechanisms (A5, B5, C5, D5) for branching the plurality of material gases at a predetermined branching ratio by the number of the plurality of regions and introducing them into the gas supply unit (130) at a predetermined flow rate. , G5, H5),
A plurality of mixing pipes that mix a predetermined plurality of material gases of the plurality of material gases and are respectively connected to the plurality of gas branch mechanisms (A5, B5, C5, D5, G5, H5),
A control unit (190) for controlling the plurality of gas branching mechanisms (A5, B5, C5, D5, G5, H5),
The controller (190) is supplied to each of the plurality of regions by setting the predetermined branching ratio of each of the plurality of gas branching mechanisms (A5, B5, C5, D5, G5, H5). A vapor phase growth apparatus that adjusts flow rates of the plurality of material gases.
The control unit (190) includes a flow rate of the plurality of material gases supplied in each of the plurality of regions and a flow rate of a part of the plurality of material gases to determine a portion of the plurality of material gases. An arithmetic unit (190B) for calculating the flow rate of the remaining material gas,
Based on the calculation result of the calculation unit (190B), the control unit (190) causes the flow rate of the remaining material gas by each of the plurality of gas branching mechanisms (A5, B5, C5, D5, G5, H5). The vapor phase growth apparatus according to claim 1, wherein the flow rate of the plurality of material gases supplied to each of the plurality of regions is maintained at the predetermined flow rate.
A film thickness detection mechanism (196) for detecting the film thickness of the film formed on the substrate (10) to be processed;
The control unit (190), based on the film thickness detection signal input from the film thickness detection mechanism (196), each of the plurality of gas branch mechanisms (A5, B5, C5, D5, G5, H5). The vapor phase growth apparatus according to claim 1 or 2, wherein the predetermined branching ratio is adjusted and the predetermined flow rate is adjusted.