TW201317384A - Vapor deposition device - Google Patents

Abstract

This vapor deposition device is equipped with: a susceptor (120) that has multiple areas on the top surface and on which a substrate to be treated (10) is mounted; and a gas supply unit (130) that faces the susceptor (120) and respectively supplies multiple material gases to the multiple areas. In addition, the vapor deposition device is equipped with: multiple gas-branching mechanisms for branching the multiple material gases in the same number as that of the multiple areas according to predetermined branching ratios, and for introducing the branched material gases to the gas supply unit (130) according to predetermined flow rates; multiple mixing pipes for mixing multiple predetermined material gases among the multiple material gases, said mixing pipes being respectively connected to the multiple gas-branching mechanisms; and a control unit (190) for controlling the multiple gas-branching mechanisms. The control unit (190) sets the respective predetermined branching ratios for the multiple gas-branching mechanisms, thereby regulating the flow rates of the multiple material gases to be respectively supplied to the aforementioned multiple areas.

Description

Gas phase growth device

The present invention relates to a vapor phase growth apparatus for forming a film on a substrate to be processed using a plurality of material gases.

A light-emitting diode, a semiconductor laser, a solar device for a universe, a high-speed device, and the like can be manufactured by a MOCVD (Metal Organic Chemical Vapor Deposition) method using a compound semiconductor material.

In the MOCVD method, an organometallic gas such as trimethylgallium or trimethylaluminium (TMA) or a hydride such as ammonia (NH ₃ ), phosphine (PH ₃ ) or hydrazine (AsH ₃ ) is used. The gas acts as a material gas that contributes to film formation.

The MOCVD method is a method in which a material semiconductor is introduced into a film forming chamber and heated by a gas phase reaction with a carrier gas to form a compound semiconductor crystal on the substrate to be processed.

It is known that when a desired film is formed by MOCVD, a surface reaction occurring on the surface of a substrate to be processed by a reactive material gas has an extremely complicated mechanism. That is, a plurality of parameters such as the temperature of the material gas, the flow rate, the pressure, the type of the active chemical species contained in the material gas, the residual gas component in the reaction system, and the temperature of the substrate to be processed contribute to the surface reaction. Therefore, it is extremely difficult to control these parameters in the MOCVD method to form a desired film.

As a prior document which discloses the composition of a reactor for MOCVD, Japanese Patent Laid-Open Publication No. 2007-521633 (Patent Document 1). In the reactor described in Patent Document 1, the gas of the substrate having a different radial distance from the rotation axis of the rotating disk has substantially the same speed. The gas that is directed toward the portion of the disk that is away from the shaft contains a relatively high concentration of reactant gas for the gas that is closer to the portion of the shaft.

Japanese Patent Laid-Open No. Hei 6-295862 (Patent Document 2) is known as a prior art. In the compound semiconductor manufacturing apparatus described in Patent Document 2, a group V gas, a group III gas, and an impurity gas are introduced into the reaction tube by separate piping, and the flow rate is controlled by a needle valve.

Prior technical literature Patent literature

Patent Document 1: Japanese Patent Laid-Open Publication No. 2007-521633

Patent Document 2: Japanese Patent Laid-Open No. Hei 6-295862

In the vapor phase growth apparatus which is processed by the MOCVD method, in order to improve the quality of the compound semiconductor crystal and to suppress the production cost, it is required to improve the material yield and the processing ability. Therefore, it is possible to process the substrate of the large-caliber substrate as much as possible in a uniform and high-quality manner, and to increase the size of the vapor phase growth device.

In the large-scale vapor phase growth apparatus, the large-diameter substrate to be processed is processed in a large amount, and the susceptor on which the substrate to be processed is placed is made large. Moreover, in order to improve the processing capability, the substrate to be processed is covered from the center portion to the end portion of the large base. deal with. Therefore, it is necessary to crystallize a compound semiconductor having a uniform film thickness and film characteristics on each of a plurality of substrates to be processed placed on a large susceptor.

In order to crystallize the compound semiconductor having a uniform film thickness and film characteristics, it is necessary to adjust the mixing ratio and flow rate of the material gas for each of a plurality of regions on the large susceptor.

The present invention has been made in view of the above problems, and an object thereof is to provide a vapor phase growth apparatus capable of adjusting a mixing ratio and a flow rate of a material gas for each of a plurality of regions on a susceptor.

A vapor phase growth apparatus according to the present invention includes: a susceptor on which a substrate to be processed is placed, and has a plurality of regions on an upper surface; and a gas supply portion that faces the susceptor and supplies a plurality of material gases to the above Each of the multiple regions. Further, the vapor phase growth device includes: a plurality of gas branching mechanisms for dividing a plurality of material gases at a specific branch ratio corresponding to the plurality of regions, and introducing the gas to the gas supply portion at a specific flow rate; a plurality of mixing pipes that mix a specific plurality of material gases of the plurality of material gases and are respectively connected to a plurality of gas branching mechanisms; and a control unit that controls the plurality of gas branching mechanisms. The control unit adjusts the flow rate of the plurality of material gases supplied by each of the plurality of regions by setting the specific branch ratio of each of the plurality of gas branching mechanisms.

In one aspect of the present invention, the control unit includes a calculation unit that is based on a plurality of material gases supplied from each of the plurality of regions The flow rate of a portion of the material gas in the flow rate and the plurality of material gases is calculated, and the flow rate of the material gas remaining in the plurality of material gases is calculated. The control unit adjusts the flow rate of the material gas supplied to each of the plurality of regions by the respective gas branching units by adjusting the flow rate of the material gas of the remaining portions, based on the calculation result of the calculation unit, and maintains the flow rate of the plurality of material gases supplied to each of the plurality of regions. Traffic.

In one aspect of the invention, the vapor phase growth apparatus further includes a film thickness detecting means that detects a film thickness of the film formed on the substrate to be processed. The control unit adjusts the specific branch ratio of each of the plurality of gas branching mechanisms based on the film thickness detection signal input from the film thickness detecting means, and adjusts the specific flow rate.

According to the present invention, the mixing ratio and flow rate of the material gas can be adjusted for each of a plurality of regions on the susceptor.

Hereinafter, a vapor phase growth apparatus according to an embodiment of the present invention will be described. In the following description of the embodiments, the same or equivalent parts are attached to the same or the corresponding parts, and the description thereof will not be repeated. Further, as an example of a vapor phase growth apparatus, a vertical shower head type MOCVD apparatus will be described.

Fig. 1 is a cross-sectional view showing a part of the configuration of an MOCVD apparatus according to an embodiment of the present invention. Figure 2 is a view of the shower plate viewed from below. Fig. 3 is a system diagram showing the configuration of a mixing pipe and a gas branching mechanism of the MOCVD apparatus of the present embodiment.

As shown in FIG. 1, an MOCVD apparatus 100 according to an embodiment of the present invention has The film forming chamber 110 of the substrate 10 to be processed is internally processed. The susceptor 120 in which the substrate to be processed 10 is placed in a plan view is placed in the film forming chamber 110.

The susceptor 120 is defined as a plurality of regions. In the present embodiment, the following two regions are defined: a central side region of the susceptor 120, which is ejected from the shower head 130 as shown by the arrow 20 in FIG. 1; and the edge of the susceptor 120. The side region is ejected as a mixture of gases as indicated by arrow 30.

However, the plurality of regions are not limited thereto, and various conditions such as the size of the susceptor 120, the arrangement of the plurality of substrates to be processed 10 placed on the susceptor 120, and the position of the gas discharge portion 141 described below may be used. The crystal growth of the compound semiconductor on the substrate 10 to be processed is appropriately determined.

A heater 121 having a circular shape in plan view is disposed below the susceptor 120. The heater 121 is disposed on a support table 151 having a circular shape in plan view. One end of the rotating shaft 150 is connected to the lower portion of the center of the support table 151. An actuator (not shown) is connected to the other end of the rotating shaft 150, and the rotating shaft 150 is rotatable about the center of the shaft. The centers of the susceptor 120, the heater 121, and the support table 151 are located on the central axis of the rotating shaft 150.

A heater cover 152 is provided to cover the circumferential sides of the susceptor 120, the heater 121, and the support table 151. The MOCVD apparatus 100 includes a susceptor 120, a heater 121, a support table 151, and a heater cover 152.

A shower head 130, which is a gas supply unit that supplies a plurality of material gases to the substrate to be processed 10, is provided on the upper portion of the film forming chamber 110 so as to face the susceptor 120. The shower head 130 includes a shower plate 131, a water-cooling portion 132, and a hollow portion 133.

As shown in FIG. 2, the shower plate 131 has a function to eject the mixed gas to the location. A plurality of openings 131a on the substrate 10 are disposed. In the plurality of openings 131a, the mixed gas is ejected from the opening side 131a of the center side region 20a of the shower plate 131 to the center side region on the susceptor 120. Further, in the plurality of openings 131a, the mixed gas is ejected from the edge side region of the pedestal 120 from the opening 131a located in the edge side region 30a of the shower plate 131. As shown in FIG. 1, the lower surface of the shower plate 131 is opposed to the upper surface of the susceptor 120 in parallel.

The water-cooling portion 132 is a portion that circulates the cooling water that cools the shower head 130 by water. The water-cooling device 160 including the pump, the water supply source, and the cooling source supplies the cooling water to the water-cooling unit 132 through the cooling pipe 161.

A plurality of mixing pipes described below are connected to the hollow portion 133. The inside of the hollow portion 133 communicates with a plurality of openings 131a in the plurality of mixing pipes and the shower plate 131. The MOCVD apparatus 100 includes a shower head 130.

Further, the MOCVD apparatus 100 includes a gas discharge portion 141 for exhausting the inside of the film forming chamber 110, a purge line 142 connected to the gas discharge portion 141, and an exhaust treatment device 140 connected to the purge line 142. .

With this configuration, the mixed gas introduced into the inside of the film forming chamber 110 is discharged to the outside of the film forming chamber 110 by the gas discharging portion 141, and the discharged mixed gas is sent to the exhaust gas treatment device 140 through the purge line 142. It is detoxified in the exhaust gas treatment device 140.

When a thin film is formed on the substrate to be processed 10 by the MOCVD apparatus 100 of the present embodiment, the mixed gas is supplied from the shower head 130 to the film forming chamber 110. At this time, the substrate to be processed 10 is heated by the heater 121 via the rotating susceptor 120. A chemical reaction occurs on the heated substrate 10 to be processed, whereby a thin film is formed on the substrate 10 to be processed. Through the substrate 10 to be processed The mixed gas is discharged from the gas discharge portion 141.

Hereinafter, a piping system included in the MOCVD apparatus 100 and conveying a plurality of mixed gases to the shower head 130 will be described.

In the MOCVD apparatus 100 of the present embodiment, a group III material gas containing a group III element, a group V material gas containing a group V element, and a dopant material gas containing an impurity element are used as the substrate 10 to be processed. A plurality of material gases forming a film of the compound semiconductor. However, the plurality of material gases are not limited thereto, and for example, a Group II material gas containing a Group II element, a Group VI material gas containing a Group VI element, and a dopant material gas containing an impurity element may be used.

Examples of the group III element include Ga (gallium), Al (aluminum), and In (indium). As the group III material gas, for example, an organometallic gas such as trimethylgallium or trimethylaluminum may be used.

Examples of the group V element include N (nitrogen), P (phosphorus) or As (arsenic). As the group V material gas, for example, a hydride gas such as ammonia (NH ₃ ), phosphine (PH ₃ ) or hydrazine (AsH ₃ ) can be used.

Examples of the impurity element include Mg (magnesium) or Si (yttrium). As the dopant material gas, Cp ₂ Mg (bis-cyclopentadienyl Mg, bis(cyclopentadienyl) magnesium) gas or SiH ₄ gas or the like can be used.

As shown in FIG. 1, the MOCVD apparatus 100 has a group III mixed gas edge side supply source 170 in the edge side region of the susceptor 120, and the group III mixed gas edge side supply source 170 becomes a group III system containing a group III material gas. A source of mixed gas. Moreover, the MOCVD device 100 is in the edge side region of the susceptor 120. The V-group mixed gas edge side supply source 171 is provided in the domain, and the V-group mixed gas edge side supply source 171 serves as a supply source of the V-based mixed gas containing the group V material gas.

Further, the MOCVD apparatus 100 has a group III mixed gas center side supply source 172 in the center side region of the susceptor 120, and the group III mixed gas center side supply source 172 is a group III mixed gas containing a group III material gas. Supply source. Further, the MOCVD apparatus 100 has a V-type mixed gas edge side supply source 173 in the center side region of the susceptor 120, and the V-based mixed gas edge side supply source 173 becomes a V-based mixed gas containing a group V material gas. Supply source.

The group III mixed gas edge side supply source 170 is connected to the shower head 130 by a group III edge side mixing pipe 170a to which a mass flow controller as a flow rate adjusting mechanism is connected 170c. The V-type mixed gas edge side supply source 171 is connected to the shower head 130 by the V-based edge side mixed-use pipe 171a, and the V-type edge side mixed-use pipe 171a is connected to the mass flow controller 171c.

The group III mixed gas center side supply source 172 is connected to the shower head 130 by the group III center side mixing pipe 172a, and the mass flow center controller 172c is connected to the group III center side mixing pipe 172a. The V-type mixed gas center side supply source 173 is connected to the shower head 130 by a V-group center side mixing pipe 173a, and the V-type system-side mixing pipe 173a is connected to the mass flow controller 173c.

The MOCVD apparatus 100 has a control unit 190 that controls all of the mass flow controllers included in the MOCVD apparatus 100. Control department 190 is connected to the group III mixed gas edge side supply source 170 via the wiring 191, and is connected to the group V mixed gas edge side supply source 171 via the wiring 192, and is connected to the group III mixed gas center side by the wiring 193. The supply source 172 is connected, and is connected to the group V mixed gas center side supply source 173 via the wiring 194.

All the mass flow controllers that adjust the flow rate of the mixed gas of the III-type mixed gas edge side supply source 170 are connected to the control unit 190 via the III-series mixed gas edge side supply source 170 via wiring (not shown).

All the mass flow controllers that adjust the flow rate of the mixed gas of the V-type mixed gas edge side supply source 171 are connected to the control unit 190 via the V-type mixed gas edge side supply source 171 via wiring (not shown).

All the mass flow controllers that adjust the flow rate of the mixed gas of the III-type mixed gas edge side supply source 172 are connected to the control unit 190 via a group III mixed gas edge side supply source 172 via a wiring (not shown).

All the mass flow controllers that adjust the flow rate of the mixed gas of the V-type mixed gas edge side supply source 173 are connected to the control unit 190 via the V-type mixed gas edge side supply source 173 via a wiring (not shown).

Further, the MOCVD apparatus 100 of the present embodiment has a film thickness sensor 196 as a film thickness detecting means for detecting the film thickness of the film formed on the substrate 10 to be processed. The film thickness sensor 196 is connected to the control unit 190 via a wiring 195.

As shown in FIG. 3, the MOCVD apparatus 100 includes a carrier gas supply source 180, a first group III material gas supply source 181, a second group III material gas supply source 182, a first group V material gas supply source 183, and a second group V material gas supply source. 184. The first dopant material gas supply source 185 and the second dopant material gas supply source 186.

The carrier gas supply source 180 supplies, for example, H ₂ gas as a carrier gas. The carrier gas supply source 180 is connected to the carrier gas line 180a. The carrier gas line 180a is connected to the mass flow controllers A1, A2, B1, B2, C2, D2, G1, G2, H1 and H2.

Further, the carrier gas line 180a is connected to the carrier gas line 180b and the carrier gas line 180c. The carrier gas line 180b branches into a group III edge side mixing pipe 170b to which the mass flow controller E1 is connected, and a group III center side mixing pipe 172b to which the mass flow controller E2 is connected.

The carrier gas line 180c branches into a V-group edge side mixing pipe 171b to which the mass flow controller F1 is connected, and a V-group center side mixing pipe 173b to which the mass flow controller F2 is connected.

The first group III material gas supply source 181 is supplied with, for example, TMG gas. The Group 1 III material gas supply source 181 is connected to the foaming device. The introduction side of the foaming device is connected to the carrier gas line connected to the mass flow controller A1 via a valve, and the leading side of the foaming device is connected to the carrier gas line connected to the mass flow controller A2 via a valve. .

The carrier gas line connected to the mass flow controller A2 is branched by a mass flow controller A3 including a differential pressure gauge and a gas branching mechanism A5 of the mass flow controller A4. The side to which the mass flow controller A3 is connected is connected to the group III edge side mixing pipe 170b. The side to which the mass flow controller A4 is connected is connected to the group III center side mixing pipe 172b.

The Group II III material gas supply source 182 supplies, for example, TMA gas. The Group 2 III material gas supply source 182 is connected to the foaming device. Guide to the foaming device The inlet side is connected to the carrier gas line to which the mass flow controller B1 is connected via a valve. The outlet side of the foaming device is connected to the carrier gas line to which the mass flow controller B2 is connected via a valve.

The carrier gas line connected to the mass flow controller B2 is branched by a gas branching mechanism B5 including a differential flow pressure specification mass flow controller B3 and a mass flow controller B4. The side to which the mass flow controller B3 is connected is connected to the group III edge side mixing pipe 170b. The side to which the mass flow controller B4 is connected is connected to the group III center side mixing pipe 172b.

The first dopant material gas supply source 185 supplies, for example, Cp ₂ Mg gas. The first dopant material gas supply source 185 is connected to the foaming device. The introduction side of the foaming device is connected to the carrier gas line to which the mass flow controller G1 is connected via a valve. The outlet side of the foaming device is connected to the carrier gas line to which the mass flow controller G2 is connected via a valve.

The carrier gas line connected to the mass flow controller G2 is branched by a gas branching mechanism G5 including a differential flow pressure specification mass flow controller G3 and a mass flow controller G4. The side to which the mass flow controller G3 is connected is connected to the group III edge side mixing pipe 170b, and the side to which the mass flow controller G4 is connected is connected to the group III center side mixing pipe 172b.

The second dopant material gas supply source 186 supplies, for example, SiH ₄ gas. The second dopant material gas supply source 186 is connected to the foaming device. The introduction side of the foaming device is connected to the carrier gas line connected to the mass flow controller H1 via a valve. The outlet side of the foaming device is connected to the carrier gas line to which the mass flow controller H2 is connected via a valve.

The carrier gas line connected to the mass flow controller H2 is comprised of differential pressure The mass flow controller H3 of the specification and the gas branching mechanism H5 of the mass flow controller H4 are branched. The side to which the mass flow controller H3 is connected is connected to the group III edge side mixing pipe 170b. The side to which the mass flow controller H4 is connected is connected to the group III center side mixing pipe 172b.

The Group 1V material gas supply source 183 supplies, for example, NH ₃ gas. The first group V material gas supply source 183 is connected to one end of a pipe to which the mass flow controller C1 is connected. The other end side of the pipe is connected to a carrier gas line to which the mass flow controller C2 is connected.

The carrier gas line connected to the mass flow controller C2 is branched by a gas branching mechanism C5 including a differential pressure gauge mass flow controller C3 and a mass flow controller C4. The side to which the mass flow controller C3 is connected is connected to the V-group edge side mixing pipe 171b. The side to which the mass flow controller C4 is connected is connected to the V-system center side mixing pipe 173b.

The second group V material gas supply source 184 supplies, for example, AsH ₃ gas. The Group 2V material gas supply source 184 is connected to one end of a pipe to which the mass flow controller D1 is connected. The other end side of the pipe is connected to a carrier gas line to which the mass flow controller D2 is connected.

The carrier gas line connected to the mass flow controller D2 is branched by a gas branching mechanism D3 including a differential flow pressure specification mass flow controller D3 and a mass flow controller D4. The side to which the mass flow controller D3 is connected is connected to the V-group edge side mixing pipe 171b. The side to which the mass flow controller D4 is connected is connected to the V-system center side mixing pipe 173b.

The supply method of each material gas and the flow rate adjustment method will be described below. Fig. 4 is a block diagram showing a control unit of the MOCVD apparatus of the embodiment. Figure 5 The flow chart of the flow rate calculation process of the gas branching mechanism A5 by the calculation unit of the control unit is shown. Fig. 6 is a flowchart showing a flow rate calculation process of the gas branching mechanism B5 by the calculation unit of the control unit. Fig. 7 is a flowchart showing a flow rate calculation process of the gas branching mechanism G5 by the calculation unit of the control unit.

FIG. 8 is a flowchart showing a flow rate calculation process of the gas branching mechanism H5 by the calculation unit of the control unit. FIG. 9 is a flowchart showing a flow rate calculation process of the gas branching mechanism C5 by the calculation unit of the control unit. FIG. 10 is a flowchart showing a flow rate calculation process of the gas branching mechanism D5 by the calculation unit of the control unit.

As shown in FIG. 4, the control unit 190 includes an input unit 190A to which a signal sent from an external device such as the film thickness sensor 196 is input, and a calculation unit 190B for calculating a gas flow rate. The control unit 190 reads the program from the memory unit 190C in which the program for generating the crystal growth sequence for setting the gas flow rate is appropriately read, and calculates the gas flow rate in the calculation unit 190B.

The control unit 190 outputs a flow rate adjustment signal to each of the mass flow controllers A1 to H4 based on the calculation result of the calculation unit 190B, thereby controlling the gas branching mechanisms A5, B5, C5, D5, G5, and H5 to adjust the gas flow rate.

As shown in FIG. 3, the carrier gas is introduced into the foaming device by the mass flow controller A1, and is bubbled in the cylinder to generate TMG gas. The amount of TMG gas generated is determined by the flow rate of the carrier gas introduced from the mass flow controller A1.

The generated TMG gas is mixed with the carrier gas delivered from the mass flow controller A2. The concentration of TMG gas and the total flow rate are determined by the flow rate of the carrier gas delivered from the mass flow controller A2.

A portion of the TMG gas mixed with the carrier gas is sent to the group III edge side mixing pipe 170b by the mass flow controller A3 to control the flow rate. The remaining portion of the TMG gas mixed with the carrier gas is sent to the group III center side mixing pipe 172b by the mass flow controller A4 to control the flow rate.

The flow adjustment associated with the TMG gas is performed as follows. As shown in FIG. 5, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism A5 to a specific fixed value Sa5 (slm) (T10). Next, the flow rate of the mass flow controller A1 is set to Sa1 (slm) (T11). As a result, the flow rate Sa2 (slm) of the mass flow controller A2 is set to Sa5-Sa1 and calculated (T12). Based on the calculation result, the flow rate adjustment by the mass flow controller A2 is performed.

Similarly, one part of the TMA gas mixed with the carrier gas is controlled by the mass flow controller B3 to be sent to the III-group edge side mixing pipe 170b; the remaining portion of the TMA gas mixed with the carrier gas is controlled by the mass flow rate. The device B4 controls the flow rate and delivers it to the group III center side mixing pipe 172b.

The flow adjustment associated with the TMG gas is performed as follows. As shown in FIG. 6, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism B5 to a specific fixed value Sb5 (slm) (T20). Next, the flow rate of the mass flow controller B1 is set to Sb1 (slm) (T21). As a result, the flow rate Sb2 (slm) of the mass flow controller B2 is set to Sb5-Sb1 and calculated (T22). Based on the calculation result, the flow rate adjustment by the mass flow controller B2 is performed.

A portion of the Cp ₂ Mg gas mixed with the carrier gas is sent to the group III edge side mixing pipe 170b by the flow rate controlled by the mass flow controller G3. The remaining portion of the Cp ₂ Mg gas mixed with the carrier gas is sent to the group III center side mixing pipe 172b by the flow rate controlled by the mass flow controller G4.

The flow rate adjustment associated with the Cp ₂ Mg gas is carried out as follows. As shown in FIG. 7, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism G5 to a specific fixed value Sg5 (slm) (T30). Next, the flow rate of the mass flow controller G1 is set to Sg1 (slm) (T31). As a result, the flow rate Sg2 (slm) of the mass flow controller G2 is set to Sg5-Sg1 and calculated (T32). Based on the calculation result, the flow rate adjustment by the mass flow controller G2 is performed.

A portion of the SiH ₄ gas mixed with the carrier gas is sent to the group III edge side mixing pipe 170b by the flow rate controlled by the mass flow controller H3. The remaining portion of the SiH ₄ gas mixed with the carrier gas is sent to the group III center side mixing pipe 172b by the flow rate controlled by the mass flow controller H4.

The flow rate adjustment associated with the SiH ₄ gas is carried out as follows. As shown in FIG. 8, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism H5 to a specific fixed value Sh5 (slm) (T40). Next, the flow rate of the mass flow controller H1 is set to Sh1 (slm) (T41). As a result, the flow rate Sh2 (slm) of the mass flow controller H2 is set to Sh5-Sh1 and calculated (T42). Based on the calculation result, the flow rate adjustment by the mass flow controller H2 is performed.

In this way, a plurality of the group III material gas and a plurality of doping material gases are mixed in each of the group III edge side mixing pipe 170b and the group III center side mixing pipe 172b.

Further, the carrier gas is controlled to flow rate by the mass flow controller E1 and sent to the group III edge side mixing pipe 170b. The total flow rate of the mixed gas reaching the III-type mixed gas edge side supply source 170 is determined by the flow rate of the carrier gas delivered from the mass flow controller E1.

The carrier gas is controlled by the mass flow controller E2 and sent to the center of the III system. The side mixing pipe 172b. The total flow rate of the mixed gas reaching the group III mixed gas center side supply source 172 is determined by the flow rate of the carrier gas delivered from the mass flow controller E2.

Fig. 11 is a flowchart showing a flow rate calculation process of the mass flow controller E1 by the calculation unit of the control unit. Fig. 12 is a flowchart showing a flow rate calculation process of the mass flow controller E2 by the calculation unit of the control unit.

The flow rate adjustment of the mass flow controller E1 is performed as follows. As shown in FIG. 11, the calculation unit 190B sets the total flow rate of the group III mixed gas edge side supply source 170 to a specific fixed value S30 (slm) (T100). Next, the calculation unit 190B sets the branch ratio of the material gas in each gas branching mechanism to a specific branch ratio. The calculation unit 190B calculates the carrier gas flow rate from the total flow rate of the material gases branched according to the branch ratio. In addition, the branch ratio means the ratio of the conveyance to the edge side mixing piping.

Specifically, the calculation unit 190B sets the branch ratio of the gas branching mechanism A5 to Ra5 (%) (T110). The calculation unit 190B uses the gas inflow amount Sa5 (slm) to the gas branching mechanism A5 set in the step T10, and sets the flow rate Sa3 (slm) of the TMG gas sent to the group III edge side mixing pipe 170b to Sa5 × Ra5/100 is calculated (T111).

Similarly, the calculation unit 190B sets the branch ratio of the gas branching mechanism B5 to Rb5 (%) (T120). The calculation unit 190B uses the gas inflow amount Sb5 (slm) to the gas branching mechanism B5 set in the step T20, and sets the flow rate Sb3 (slm) of the TMA gas sent to the group III edge side mixing pipe 170b to Sb5 × Rb5/100 is calculated (T121).

Similarly, the calculation unit 190B sets the branch ratio of the gas branching mechanism G5 to Rg5 (%) (T130). The calculation unit 190B sets the flow rate Sg3 (slm) of the Cp ₂ Mg gas to the group III edge side mixing pipe 170b using the gas inflow amount Sg5 (slm) to the gas branching mechanism G5 set in the step T30. Sg5 × Rg5 / 100 and calculated (T131).

Similarly, the calculation unit 190B sets the branch ratio of the gas branching mechanism H5 to Rh5 (%) (T140). The calculation unit 190B sets the flow rate Sh3 (slm) of the SiH ₄ gas supplied to the III-group edge side mixing pipe 170b to Sh5 using the gas inflow amount Sh5 (slm) to the gas branching mechanism H5 set in the step T40. ×Rh5/100 and calculated (T141).

The calculation unit 190B uses the calculated total flow rate of the flow rates of the respective material gases (Sa3+Sb3+Sg3+Sh3), and sets the flow rate Se1 (slm) of the mass flow controller E1 to S30-(Sa3+Sb3+Sg3+Sh3). And calculate (T150). Based on the calculation result, the flow rate adjustment by the mass flow controller E1 is performed.

Similarly, the flow rate adjustment of the mass flow controller E2 is performed as follows. As shown in FIG. 12, the calculation unit 190B sets the total flow rate of the group III mixed gas center side supply source 172 to a specific fixed value S30a (slm) (T200).

The calculation unit 190B transfers the branch ratio of the gas branching mechanism A5 set in the above step T110 to the gas inflow amount Sa5 (slm) to the gas branching mechanism A5 set in the step T10, and transports it to the center side of the group III system. The flow rate Sa4 (slm) of the TMG gas of the mixing pipe 172b is Sa5 × (1 - Ra5 / 100) and is calculated (T211).

Similarly, the calculation unit 190B uses the gas set in the above step T120. The branch ratio of the body branching unit B5 and the gas inflow amount Sb5 (slm) of the inflowing gas branching mechanism B5 set in the step T20, and the flow rate Sb4 of the TMA gas sent to the group III center side mixing pipe 172b (slm) ) is set to Sb5 × (1-Rb5/100) and calculated (T221).

Similarly, the calculation unit 190B transfers the branch ratio of the gas branching mechanism G5 set in the above step T130 to the gas inflow amount Sg5 (slm) to the gas branching mechanism G5 set in the step T30, and transfers it to the group III. The flow rate Sg4 (slm) of the Cp ₂ Mg gas in the center side mixing pipe 172b is Sg5 × (1 - Rg5 / 100) and is calculated (T231).

Similarly, the calculation unit 190B transfers to the group III using the branch ratio of the gas branching mechanism H5 set in the above step T140 and the gas inflow amount Sh5 (slm) of the inflowing gas branching mechanism H5 set in the step T40. The flow rate Sh4 (slm) of the SiH ₄ gas in the center side mixing pipe 172b is set to Sh5 × (1 - Rh 5 / 100) and calculated (T241).

The calculation unit 190B uses the calculated total flow rate of each material gas flow rate (Sa4+Sb4+Sg4+Sh4), and sets the flow rate Se2 (slm) of the mass flow controller E2 to S30a-(Sa4+Sb4+Sg4+Sh4). And calculate (T250). Based on the calculation result, the flow rate adjustment by the mass flow controller E2 is performed.

As shown in FIG. 3, the flow rate is adjusted by the mass flow controller C1 and the NH ₃ gas is supplied from the first group V material gas supply source 183. The NH ₃ gas is mixed with the carrier gas delivered from the mass flow controller C2. The concentration of NH ₃ gas and the total flow rate are determined by the flow rate of the carrier gas delivered from the mass flow controller C2.

A portion of the NH ₃ gas mixed with the carrier gas is sent to the V-system edge side mixing pipe 171b by the flow rate controlled by the mass flow controller C3. The remaining portion of the NH ₃ gas mixed with the carrier gas is sent to the V-system center side mixing pipe 173b by the flow rate controlled by the mass flow controller C4.

The flow rate adjustment associated with the NH ₃ gas is carried out as follows. As shown in FIG. 9, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism C5 to a specific fixed value Sc5 (slm) (T50). Next, the flow rate of the mass flow controller C1 is set to Sc1 (slm) (T51). As a result, the flow rate Sc2 (slm) of the mass flow controller C2 is set to Sc5-Sc1 and calculated (T52). Based on the calculation result, the flow rate adjustment by the mass flow controller C2 is performed.

Similarly, a part of the AsH ₃ gas mixed with the carrier gas is controlled by the mass flow controller D3 to be sent to the V-group edge side mixing pipe 171b. The remaining portion of the AsH ₃ gas mixed with the carrier gas is sent to the V-system center side mixing pipe 173b by the flow rate controlled by the mass flow controller D4.

The flow rate adjustment associated with the AsH ₃ gas is performed as follows. As shown in FIG. 10, the calculation unit 190B sets the gas inflow amount to the gas branching mechanism D5 to a specific fixed value Sd5 (slm) (T60). Next, the flow rate in the mass flow controller D1 is set to Sd1 (slm) (T61). As a result, the flow rate Sd2 (slm) of the mass flow controller D2 is set to Sd5 - Sd1 and calculated (T62). Based on the calculation result, the flow rate adjustment by the mass flow controller D2 is performed.

In this way, a plurality of V-based material gases are mixed in each of the V-based edge side mixing pipe 171b and the V group center side mixing pipe 173b.

Further, the carrier gas is controlled to flow rate by the mass flow controller F1 and sent to the V-group edge side mixing pipe 171b. The total flow rate of the mixed gas reaching the V-type mixed gas edge side supply source 171 is delivered from the mass flow controller F1. The flow rate of the carrier gas is determined.

The carrier gas is controlled by the mass flow controller F2 to be sent to the V-system center side mixing pipe 173b. The total flow rate of the mixed gas reaching the V-type mixed gas center side supply source 173 is determined by the flow rate of the carrier gas delivered from the mass flow controller F2.

Fig. 13 is a flowchart showing a flow rate calculation process of the mass flow controller F1 by the calculation unit of the control unit. Fig. 14 is a flowchart showing a flow rate calculation process of the mass flow controller F2 by the calculation unit of the control unit.

The flow rate adjustment of the mass flow controller F1 is performed as follows. As shown in FIG. 13, the calculation unit 190B sets the total flow rate of the V-group mixed gas edge side supply source 171 to a specific fixed value S31 (slm) (T300). Next, the calculation unit 190B sets the branch ratio of the material gas in each gas branching mechanism to a specific branch ratio. The calculation unit 190B calculates the carrier gas flow rate from the total flow rate of the material gases branched according to the branch ratio.

Specifically, the calculation unit 190B sets the branch ratio of the gas branching mechanism C5 to Rc5 (%) (T310). The calculation unit 190B uses the gas inflow amount Sc5 (slm) to the gas branching mechanism C5 set in the step T50, and sets the flow rate Sc3 (slm) of the TMG gas sent to the V-group edge side mixing pipe 171b to Sc5 × Rc5/100 is calculated (T311).

Similarly, the calculation unit 190B sets the branch ratio of the gas branching mechanism D5 to Rd5 (%) (T320). The calculation unit 190B sets the flow rate Sd3 (slm) of the TMA gas sent to the V-type edge side mixing pipe 171b using the gas inflow amount Sd5 (slm) to the gas branching mechanism D5 set in the step T60. It is Sd5 × Rd5/100 and is calculated (T321).

The calculation unit 190B calculates the flow rate Sf1 (slm) of the mass flow controller F1 using the calculated total flow rate of each material gas flow rate (Sc3+Sd3) as S31-(Sc3+Sd3) and calculates (T350). Based on the calculation result, the flow rate adjustment by the mass flow controller F1 is performed.

Similarly, the flow rate adjustment of the mass flow controller F2 is performed as follows. As shown in FIG. 14, the calculation unit 190B sets the total flow rate of the V-group mixed gas center side supply source 173 to a specific fixed value S31a (slm) (T400).

The calculation unit 190B conveys the branch ratio of the gas branching mechanism C5 set in the above step T310 and the gas inflow amount Sc5 (slm) to the gas branching mechanism C5 set in the step T50, and transports it to the center side of the V group system. The flow rate Sc4 (slm) of the NH ₃ gas of the mixing pipe 173b is set to Sc5 × (1 - Rc5 / 100) and calculated (T411).

Similarly, the calculation unit 190B is transported to the V group using the branch ratio of the gas branching mechanism D5 set in the above step T320 and the gas inflow amount Sd5 (slm) of the inflowing gas branching mechanism D5 set in the step T60. The flow rate Sd4 (slm) of the AsH ₃ gas in the center side mixing pipe 173b is Sd5 × (1 - Rd 5 / 100) and is calculated (T421).

The calculation unit 190B calculates the flow rate Sf2 (slm) of the mass flow controller F2 using the calculated total flow rate of each material gas flow rate (Sc4+Sd4) as S31a-(Sc4+Sd4) and calculates (T450). Based on the calculation result, the flow rate adjustment by the mass flow controller F2 is performed.

As described above, the MOCVD apparatus 100 has a plurality of mixing pipes that mix a specific plurality of material gases of a plurality of material gases. They are respectively introduced into the shower head 130. Further, the MOCVD apparatus 100 has a plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 for using a plurality of material gases to be specific to the number of the plurality of regions on the susceptor 120. The branch ratio branches and is introduced to the shower head 130 at a specific flow rate.

Each of the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 individually adjusts the branching ratio of each of the plurality of material gases. That is, each of the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 is controlled independently of each other by the control unit 190.

The control unit 190 adjusts the specific branch ratio of each of the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 to adjust the plurality of the plurality of regions provided on the susceptor 120. The flow of material gas.

As described above, the control unit 190 includes a calculation unit 190B that divides the flow rate of the plurality of material gases supplied from each of the plurality of regions on the susceptor 120 and a part of the material gas of the plurality of material gases. The flow rate is calculated as the flow rate of the material gas remaining in the plurality of material gases.

The control unit 190 adjusts the flow rate of the material gas in the remaining portion by the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 based on the calculation result of the calculation unit 190B, thereby supplying the base material to the base. The flow rate of the plurality of material gases of each of the plurality of zones on the block 120 is maintained at the above specified flow rate.

Further, the control unit 190 adjusts the flow rates of the mass flow controllers E1, E2, F1, and F2, whereby the total flow rate of each of the mixed gas supply sources 170 to 173 can be maintained. Hold on a specific flow.

In the present embodiment, each of the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 includes two mass flow controllers of a differential pressure specification, but the gas branching mechanism may include a flow divider.

The shower head 130 ejects a plurality of mixed gases of a plurality of mixed pipes to a plurality of regions on the susceptor 120, respectively. The concentration and flow rate of each of the plurality of material gases are adjusted for each of the plurality of mixed gases.

Specifically, for example, the flow ratio of the mass flow controller A3 to the mass flow controller A4 and the flow ratio of the mass flow controller B3 to the mass flow controller B4 are set to be different, whereby the III-series mixing can be adjusted. The mixing ratio of the gas edge side supply source 170 and the plurality of group III material gases in the group III mixed gas center side supply source 172. Similarly, the mixing ratio of the plurality of V-group material gases in the V-based mixed gas edge side supply source 171 and the V-based mixed gas center side supply source 173 can be adjusted.

Further, in a state where the mixing ratio of the plurality of group III material gases is fixed, the flow ratio of the group III mixed gas to the group V mixed gas in the mixed gas discharged to the edge side region of the susceptor 120 can be adjusted. And a flow ratio of the group III mixed gas to the group V mixed gas in the mixed gas discharged to the center side region.

Specifically, for example, the flow rates of the mass flow controllers A3, A4, B3, B4, C3, and C4 are respectively L _A3 , L _A4 , L _B3 , L _B4 , L _C3 , and L _C4 . If it is set to satisfy L _A3 : L _A4 = L _B3 : L _B4 and L _C3 / (L _A3 + L _B3 ) = L _C4 / (L _A4 + L _B4 ) is satisfied, it can be in the edge side region of the susceptor 120 The flow rate ratio of the III-based mixed gas to the V-based mixed gas to be discharged is the same as that in the center side region.

On the other hand, by setting L _C3 and L _{C4 in} such a manner that the above relationship is not satisfied, the flow ratios of the III-based mixed gas and the V-based mixed gas which are ejected can be made different in the edge side region and the center side region of the susceptor 120. . Furthermore, the above relationship is a case where only one gas of a group V material is used.

As described above, in the MOCVD apparatus 100 of the present embodiment, the mixing ratio and the flow rate of the material gas can be adjusted for each of a plurality of regions on the susceptor 120. As a result, in the case of processing a plurality of large-area substrates 10 to be processed, it is sufficient that the thickness of the grown crystal, the composition, and the uniformity of the amount of added impurities are sufficient for the substrate 10 to be processed. That is, the compound semiconductor crystal having a uniform film thickness and film characteristics can be grown in each of the plurality of substrates 10 to be processed.

Further, the MOCVD apparatus 100 of the present embodiment has a film thickness sensor 196. The control unit 190 adjusts the specific branch ratio of each of the plurality of gas branching mechanisms A5, B5, C5, D5, G5, and H5 based on the film thickness detection signal input from the film thickness sensor 196, and adjusts the above specificity. Traffic.

The film thickness of the film formed on the substrate to be processed 10 depends on the amount of the III-group material to be supplied. Therefore, when the film thickness detected by the film thickness sensor 196 is smaller than the set value, the flow rate of the mass flow controller A1 is increased to increase the amount of TMG generated. At this time, the flow rate of the mass flow controller A2 is adjusted by the control unit 190 in a manner corresponding to the decrease in the flow rate increased in the mass flow controller A1.

By adjusting in this manner, the flow rate of the TMG gas flowing into the gas branching mechanism A5 does not change, and the branch ratio of the gas branching mechanism A5 does not change. Therefore, the total flow rate of the TMG gas delivered to the group III edge side mixing pipe 170b and the group III center side mixing pipe 172b can be maintained. That is, the amount of TMG can be increased and the flow rate of TMG gas can be maintained.

In the above case, the amount of TMG is changed in both the edge side region and the center side region on the susceptor 120, and the case where the amount of TMG is changed in either case will be described below.

For example, a case will be described in which only the edge side region on the susceptor 120 reduces the amount of TMG supplied. In order to reduce the flow rate of the mass flow controller A1 and maintain the amount of TMG supplied to the center side region on the susceptor 120, the branch ratio of the gas branching mechanism A5 is changed. Specifically, the ratio of the TMG gas supplied to the group III center side mixing pipe 172b is increased, and the amount of TMG supplied to the center side region on the susceptor 120 is not changed. Therefore, only the amount of TMG supplied to the edge side region on the susceptor 120 is lowered.

At this time, the flow rate of the mass flow controller A2 is adjusted by the control unit 190 in a manner corresponding to the decrease in the flow rate increased by the mass flow controller A1. In addition, the flow rate of the mass flow controllers E1 and E2 is transmitted to the group III side side mixing pipe 170b and the group III center side mixing pipe 172b by the change of the branch ratio of the gas branching unit A5. The control unit 190 performs adjustment so that the total flow rate does not change.

According to the above configuration, the flow rate of the plurality of material gases supplied to the plurality of regions on the susceptor 120 can be maintained and processed under stable film formation conditions, and a plurality of material gases supplied at a desired mixing ratio can be supplied. To each region. As a result, the compound semiconductor crystal having a uniform film thickness and film characteristics can be grown in each of the plurality of substrates 10 to be processed.

The embodiments disclosed herein are considered to be illustrative and not restrictive in all respects. The scope of the present invention is defined by the scope of the claims, and is intended to be

10‧‧‧Processed substrate

20‧‧‧ arrow

20a‧‧‧Center side area

30‧‧‧ arrow

30a‧‧‧Edge side area

100‧‧‧MOCVD device

110‧‧‧filming room

120‧‧‧Base

121‧‧‧heater

130‧‧‧Tufted head

131‧‧‧Raining board

131a‧‧‧ openings

132‧‧‧Water Cooling Department

133‧‧‧ Hollow

140‧‧‧Exhaust treatment unit

141‧‧‧ gas discharge department

142‧‧‧purification pipeline

150‧‧‧Rotary axis

151‧‧‧Support table

152‧‧‧heater cover

160‧‧‧Water cooling device

161‧‧‧Cooling piping

170‧‧‧III mixed gas edge side supply source

170a, 170b‧‧‧III family edge side mixing piping

170c‧‧‧mass flow controller

171‧‧‧V-type mixed gas edge side supply source

171a, 171b‧‧‧V family edge side mixing piping

171c‧‧‧mass flow controller

172‧‧‧III mixed gas center side supply

172a, 172b‧‧‧III family center side mixing piping

172c‧‧‧mass flow controller

173‧‧‧V-type mixed gas center side supply source

173a, 173b‧‧‧V family center side mixing piping

173c‧‧‧mass flow controller

180‧‧‧ Carrier gas supply

180a, 180b, 180c‧‧‧ carrier gas pipeline

181‧‧‧Part 1III material gas supply source

182‧‧‧Part 2III material gas supply

183‧‧‧Part 1V material gas supply source

184‧‧‧2V material gas supply source

185‧‧‧1st doping material gas supply source

186‧‧‧2nd doping material gas supply source

190‧‧‧Control Department

190A‧‧ Input Department

190B‧‧‧ Computing Department

190C‧‧‧Memory Department

191‧‧‧ wiring

192‧‧‧ wiring

193‧‧‧ wiring

194‧‧‧ wiring

195‧‧‧ wiring

196‧‧‧ film thickness sensor

A1, A2, A3, A4‧‧‧ mass flow controller

A5‧‧‧ gas branches

B1, B2, B3, B4‧‧‧ mass flow controller

B5‧‧‧ gas branches

C1, C2, C3, C4‧‧‧ mass flow controllers

C5‧‧‧ gas branches

D1, D2, D3, D4‧‧‧ mass flow controller

D5‧‧‧ gas branches

E1, E2‧‧‧ mass flow controller

F1, F2‧‧‧ mass flow controller

G1, G2, G3, G4‧‧‧ mass flow controllers

G5‧‧‧ gas branches

H1, H2, H3, H4‧‧‧ mass flow controllers

H5‧‧‧ gas branches

Fig. 1 is a cross-sectional view showing a part of the configuration of an MOCVD apparatus according to an embodiment of the present invention.

Figure 2 is a view of the shower plate viewed from below.

Fig. 3 is a system diagram showing the configuration of a mixing pipe and a gas branching mechanism of the MOCVD apparatus of the embodiment.

Fig. 4 is a block diagram showing a control unit of the MOCVD apparatus of the embodiment.

Fig. 5 is a flowchart showing a flow rate calculation process of the gas branching mechanism A5 by the calculation unit of the control unit.

Fig. 6 is a flowchart showing a flow rate calculation process of the gas branching mechanism B5 by the calculation unit of the control unit.

Fig. 7 is a flowchart showing a flow rate calculation process of the gas branching mechanism G5 by the calculation unit of the control unit.

FIG. 8 is a flowchart showing a flow rate calculation process of the gas branching mechanism H5 by the calculation unit of the control unit.

FIG. 9 is a flowchart showing a flow rate calculation process of the gas branching mechanism C5 by the calculation unit of the control unit.

FIG. 10 is a flowchart showing a flow rate calculation process of the gas branching mechanism D5 by the calculation unit of the control unit.

Fig. 11 is a flowchart showing a flow rate calculation process of the mass flow controller E1 by the calculation unit of the control unit.

Fig. 12 is a flowchart showing a flow rate calculation process of the mass flow controller E2 by the calculation unit of the control unit.

Fig. 13 is a flowchart showing a flow rate calculation process of the mass flow controller F1 by the calculation unit of the control unit.

Fig. 14 is a flowchart showing a flow rate calculation process of the mass flow controller F2 by the calculation unit of the control unit.

10‧‧‧Processed substrate

20‧‧‧ arrow

30‧‧‧ arrow

100‧‧‧MOCVD device

110‧‧‧filming room

120‧‧‧Base

121‧‧‧heater

130‧‧‧Tufted head

131‧‧‧Raining board

132‧‧‧Water Cooling Department

133‧‧‧ Hollow

140‧‧‧Exhaust treatment unit

141‧‧‧ gas discharge department

142‧‧‧purification pipeline

150‧‧‧Rotary axis

151‧‧‧Support table

152‧‧‧heater cover

160‧‧‧Water cooling device

161‧‧‧Cooling piping

170‧‧‧III mixed gas edge side supply source

170a, 170b‧‧‧III family edge side mixing piping

170c‧‧‧mass flow controller

171‧‧‧V-type mixed gas edge side supply source

171a, 171b‧‧‧V family edge side mixing piping

171c‧‧‧mass flow controller

172‧‧‧III mixed gas center side supply

172a, 172b‧‧‧III family center side mixing piping

172c‧‧‧mass flow controller

173‧‧‧V-type mixed gas center side supply source

173a, 173b‧‧‧V family center side mixing piping

173c‧‧‧mass flow controller

190‧‧‧Control Department

191‧‧‧ wiring

192‧‧‧ wiring

193‧‧‧ wiring

194‧‧‧ wiring

195‧‧‧ wiring

Claims (3)

A vapor phase growth apparatus comprising: a susceptor (120) on which a substrate to be processed (10) is placed, and having a plurality of regions on an upper surface; and a gas supply portion (130) opposite to the susceptor (120) And supplying a plurality of material gases to each of the plurality of regions; a plurality of gas branching mechanisms (A5, B5, C5, D5, G5, H5) for equalizing the plurality of material gases a plurality of regions are branched and branched at a specific branch ratio, and introduced into the gas supply portion (130) at a specific flow rate; a plurality of mixing pipes that mix a specific plurality of material gases in the plurality of material gases And respectively connected to the plurality of gas branching mechanisms (A5, B5, C5, D5, G5, H5); and a control unit (190) that controls the plurality of gas branching mechanisms (A5, B5, C5, D5, G5) And H5); and the control unit (190) adjusts the plurality of regions by setting the specific branch ratio of each of the plurality of gas branching mechanisms (A5, B5, C5, D5, G5, and H5) The flow rate of the above plurality of material gases supplied by each of them. The vapor phase growth apparatus of claim 1, wherein the control unit (190) includes: a calculation unit (190B) that calculates a flow rate of the plurality of material gases supplied from each of the plurality of regions, and the plurality of a flow rate of a part of the material gas in the material gas, and calculating a flow rate of the material gas of the remaining part of the plurality of material gases; The control unit (190) adjusts the flow rate of the remaining portion of the material gas by each of the plurality of gas branching mechanisms (A5, B5, C5, D5, G5, and H5) based on the calculation result of the calculation unit (190B). And maintaining the flow rate of the plurality of material gases supplied to each of the plurality of regions at the specific flow rate. The vapor phase growth device of claim 1 or 2, further comprising: a film thickness detecting mechanism (196) for detecting a film thickness of a film formed on the substrate to be processed (10); the control portion (190) is based on the above The film thickness detecting means (196) inputs a film thickness detecting signal, and adjusts the specific branching ratio of each of the plurality of gas branching mechanisms (A5, B5, C5, D5, G5, and H5), and adjusts the specific one. flow.