JP2007242875A - Organometallic vapor phase growth apparatus, and vapor phase growth method using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organometallic vapor phase growth method and a vapor phase growth method, capable of growing a high quality excellent uniformity crystalline film at a reduced film deposition cost. <P>SOLUTION: The organometallic vapor phase growth apparatus comprises a plurality of organometallic material gas generators, a plurality of branch mechanisms for branching organometallic material gases generated in the organometallic material gas generators; a plurality of film deposition chambers, and a plurality of pipings each between the branch mechanism film deposition chambers for introducing each organometallic material gas branched by the branch mechanism into each film deposition chamber through an independent piping system. Each piping between the branch mechanism film deposition chambers includes a gas flow rate adjusting mechanism capable of adjusting a flow rate of the gas provided thereon. The vapor phase growth method employs the organometallic gas phase growth apparatus. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vapor phase growth apparatus using an organometallic material and a vapor phase growth method using the apparatus.

  In recent years, in the field of semiconductor devices, there is an increasing demand for film formation processing technology for forming a thin film having a desired composition. Among them, the MOCVD (Metal Organic Chemical Vapor Deposition) method has attracted attention as a film forming technique for forming a compound semiconductor thin film useful for optical devices, high-speed devices, and the like.

  In order to reduce the film formation cost by the MOCVD method, it is important to reduce the apparatus cost per growth substrate.

FIG. 6 is a diagram schematically showing a general MOCVD apparatus 101 that performs InGaN crystal growth. The MOCVD apparatus 101 in the example shown in FIG. 6 includes, for example, a film forming chamber 102 for performing a film forming process on a substrate disposed inside, a pipe 103 for supplying hydrogen as a carrier gas, and a group V material. A pipe 104 for supplying ammonia gas as a gas, a pipe 105 for supplying silane (SiH ₄ ) as an n-type dopant material gas, TMG (trimethylgallium) and TMI as group III organometallic materials And pipes 106 and 107 for supplying TMG and TMI respectively generated by generators 108 and 109 of (trimethylindium).

  In the MOCVD apparatus 101 of the example shown in FIG. 6, ammonia gas generated by an ammonia source (not shown) is introduced into the film formation chamber 102 via a group V material gas supply pipe 110 connected to the pipe 104. It is comprised so that. A part of hydrogen gas generated by a hydrogen source (not shown) is supplied to the TMG generator 108 and the TMI generator 109, and the TMG vapor generated by the TMG generator 108 and the TMI generator 109, respectively. A mixed gas of hydrogen and a mixed gas of TMI vapor and hydrogen gas are introduced into the group III material gas supply pipe 111 via the pipes 106 and 107, respectively, and are mixed in the group III material gas supply pipe 111. It is configured. Also, silane gas generated from a silane gas source (not shown) is introduced into a group III material gas supply pipe 111 via a pipe 105, and TMG and TMI organometallic material gases in the group III material gas supply pipe 111. Mixed with. Thus, the mixed gas of hydrogen, TMG, TMI, and silane mixed in the group III material gas supply pipe 111 is introduced into the film forming chamber 102. The material gases introduced into the film forming chamber 102 through the group V material gas supply pipe 110 and the group III material gas supply pipe 111 are heated by the heating mechanism in the film forming chamber 102 to cause a chemical reaction. A desired InGaN crystal film is formed on a substrate (not shown) disposed inside the film formation chamber 102.

  In the MOCVD apparatus 101, the pipes 103, 105, 106, and 107 are branched in the middle and connected to the group III gas vent pipe 112, and the pipes 103 and 104 are branched in the middle and the group V gas vent pipe. 113 is connected. The group III gas vent pipe 112 and the group V gas vent pipe 113 are connected to an exhaust gas pipe 114 for leading the exhaust gas from the film forming chamber 102. For the pipes 103, 104, 105, 106, 107, the group V material gas supply pipe 110, the group III material gas supply pipe 111, the group III gas vent pipe 112, and the group V gas vent pipe 113, the flow rate of the material gas is usually adjusted. A mass flow controller (MFC, indicated by a white square in the drawing) and a valve (shown by an abbreviation in the drawing) are connected to each other.

  As a technique for reducing the cost of film formation using the MOCVD apparatus as shown in FIG. 6, for example, there is a technique in which the film formation chamber is enlarged and a large number of large-area substrates are arranged. Since the film formation is performed in a large area within the film formation chamber, it is difficult to improve the uniformity between the substrates, and there is a problem that a high-quality crystal film cannot be mass-produced.

  Therefore, as another method for reducing the film formation cost, there is a technique described in JP-A-2002-313731 (Patent Document 1). FIG. 7 shows an MOCVD apparatus 121 of the example disclosed in Patent Document 1. The MOCVD apparatus 121 disclosed in Patent Document 1 includes a plurality of film formation chambers (in the example shown in FIG. 7, two film formation chambers 122 and 123), and includes a group V gas material supply pipe 110 and a group III material gas. Each of the supply pipes 111 is branched by the number of film forming chambers, and a film forming process can be performed by supplying a material gas supplied from one gas source to a plurality of film forming chambers. Other than that, the configuration is the same as that of the MOCVD apparatus 101 in the example shown in FIG. In FIG. 7, parts having the same configuration as the MOCVD apparatus 101 in the example shown in FIG.

  In the MOCVD apparatus 121 of the example shown in FIG. 7, the group V material gas supply pipe 110 is branched by the branch mechanism 124, and the branch mechanism inter-deposition chamber pipes 125 and 126 connected to the branch mechanism 124 include the film formation chamber 122, 123, respectively. The group III material gas supply pipe 111 is also branched by the branch mechanism 127, and branch mechanism inter-deposition chamber piping 128 and 129 connected to the branch mechanism 127 are connected to the film formation chambers 122 and 123, respectively. In addition, MFCs 130 and 131 are connected to the middle of the branch mechanism deposition chamber pipes 128 and 129 branched from the group III material gas supply pipe 111, respectively. Further, the exhaust gas from the film forming chambers 122 and 123 is configured to be led to the exhaust gas pipe 114 via the exhaust pipes 132 and 133, respectively. Further, the group III material gas supply pipe 111 is provided with a mixer 134 and a pressure gauge 135 for mixing each material gas in the middle thereof, and is branchedly connected to the group III gas vent pipe 112. The group III material gas is configured to be discharged to the group III gas vent pipe 112 in accordance with the measured pressure of the group III material gas mixed in the mixer 134.

  According to the MOCVD apparatus 121 disclosed in Patent Document 1 of the example shown in FIG. 7, even if the generated gas is doubled, the cost of the gas source increases only by about 20%. Since the cost of the gas supply system including the gas source occupies a large proportion of about 1/3 to 1/2 of the total apparatus, the apparatus configuration as shown in FIG. A large number of quality crystal films can be grown.

  Further, for example, Japanese Patent Laid-Open No. 2002-121735 (Patent Document 2) discloses a material gas branch in a vapor phase growth apparatus including one material supply system, a material gas branch system, and a plurality of reactors (film formation chambers). There is disclosed a vapor phase growth apparatus in which the system includes an introduction region composed of one pipe and branch pipes corresponding to each reactor on a one-to-one basis, and each branch pipe includes a control mechanism. In such an apparatus disclosed in Patent Document 2, a material gas can be supplied in accordance with the optimum conditions for each reactor, and a semiconductor thin film can be grown at a high yield.

Furthermore, for example, in Japanese Patent Application Laid-Open No. 11-323559 (Patent Document 3), a plurality of reaction furnaces (film formation chambers) having a heating unit, a plurality of supply pipes for supplying reaction materials to each reaction furnace, and a plurality of Inlet pipes, discharge pipes, and switching valves for multiple manifold valves that can switch and discharge the material flowing into each inflow pipe to any one of the discharge pipes, and corresponding discharge pipes for each manifold valve There is disclosed a CVD apparatus including a plurality of connection pipes respectively connected to a supply pipe line, a carrier gas source, and a flow rate regulator that regulates the flow rate of the carrier gas supplied to the discharge pipe. According to such an apparatus disclosed in Patent Document 3, a multilayer film can be formed by alternately forming films of layers of different components by switching a manifold valve. A plurality of films can be grown at the same time by making effective use of raw materials without causing pressure fluctuations.
JP 2002-313731 A JP 2002-212735 A JP 11-323559 A JP 9-191119 A

  In the branched MOCVD apparatus 121 shown in FIG. 7, a gas mixed with TMG, TMI, and silane (and hydrogen) is branched into the film forming chambers 122 and 123 from the group III material gas supply pipe 111 by the branch mechanism 127. Then, after the amount of each supply gas is adjusted by the MFCs 130 and 131, the gas is supplied through the branch mechanism film forming chamber pipes 128 and 129. For this reason, the ratio of TMG: TMI or the ratio of TMG: silane of the supply gas to both film forming chambers 122 and 123 is only the same. In an ideal situation where both film forming chambers 122 and 123 have the same structure and the same heating state of the gas, the same crystal film can be obtained by supplying the same ratio and the same amount of TMG: TMI gas to both film forming chambers. However, in reality, differences in film thickness, composition ratio, dopant concentration, and the like occur in the growth crystal film between the plurality of film forming chambers.

  In the branched MOCVD apparatus 121 shown in FIG. 7, the difference in film thickness can be adjusted by changing the amount of material gas supplied by the MFCs 130 and 131, but the difference in the composition ratio of Ga: In There is no adjustment means. Similarly, there is no adjustment means for the concentration difference of Si, which is an n-type dopant in the crystal. About these malfunctions, the same thing can be said also about the apparatus disclosed by patent document 2. FIG.

  In addition, in the apparatus disclosed in Patent Document 3, since the flow rate control of each source gas is performed using a flow rate regulator provided upstream of the manifold valve, each pipe branched into a plurality of film forming chambers. Different flow control cannot be performed. Further, in the apparatus disclosed in Patent Document 3, in order to control the flow rate and composition ratio of the source gas (for example, TEG) between the deposition chambers, the number of source gas generators corresponding to the number of deposition chambers There is a problem of having to provide. Furthermore, the manifold valve used in Patent Document 3 is for exclusively switching the type of source gas to be supplied, and a plurality of types of source gases connected to the same manifold valve can be mixed to form a film. Can not.

  The present invention has been made in order to solve the above-described problems, and an object of the present invention is to provide an organometallic gas that is inexpensive in film formation, has good uniformity, and can grow a high-quality crystal film. It is to provide a phase growth apparatus and a vapor phase growth method.

  The organometallic vapor phase growth apparatus of the present invention comprises a plurality of types of organometallic material gas generators, a plurality of branch mechanisms for branching each organometallic material gas generated by the organometallic material gas generator, and a plurality of components. A film chamber and a plurality of branch mechanism inter-deposition chamber pipes for introducing each organometallic material gas branched by the branch mechanism into each film formation chamber through an independent piping system, each branch mechanism film forming The inter-chamber piping is provided with a gas flow rate adjusting mechanism capable of adjusting the gas flow rate.

  The present invention also includes an organometallic material gas generator, a dopant material gas supply mechanism, an organometallic material gas generated by the organometallic material gas generator, and a dopant material gas supplied by the dopant material gas supply mechanism. A plurality of branching mechanisms for branching, a plurality of film forming chambers, and a plurality of organic metal material gases and dopant material gases branched by the branching mechanism are introduced into the film forming chambers through independent piping systems. A metal-organic vapor phase epitaxy apparatus comprising a branch mechanism inter-deposition chamber pipe, and a gas flow rate adjusting mechanism capable of adjusting a gas flow rate is provided in each branch mechanism inter-deposition chamber pipe provide.

  The organometallic vapor phase growth apparatus of the present invention preferably further includes a material gas supply mechanism for supplying a material gas other than the organometallic material gas, and the material gas supplied from the material gas supply mechanism may contain ammonia. More preferred.

  In the organometallic vapor phase growth apparatus of the present invention, the kind of organometallic material gas generated by the organometallic material gas generator includes any of trimethylgallium, trimethylaluminum, trimethylindium, triethylgallium, triethylaluminum, and triethylindium. It is preferable.

  In the organometallic vapor phase growth apparatus of the present invention, the dopant material gas preferably contains silane.

  In the metal organic vapor phase growth apparatus of the present invention, the internal volume of each branch mechanism deposition chamber pipe connected to the same branch mechanism is the same as that of all branch mechanism deposition chamber pipes connected to the same branch mechanism. It is preferable that it is ± 2% or less of the average value of the inner volume.

  Moreover, it is preferable that the metal organic chemical vapor deposition apparatus of the present invention further includes a pressure adjusting mechanism for adjusting the pressure in the exhaust pipe for leading the exhaust gas from each film formation chamber to the exhaust pipe.

  The pressure adjustment mechanism in the present invention is preferably a connection pipe that connects the exhaust pipes to each other, for example. In this case, it is more preferable that the pipe line resistance value of the connection pipe is at least twice the pipe line resistance of the pipe from the portion of the exhaust pipe where the connection pipe is connected to the exhaust pipe. Further, a check valve may be provided in a pipe from a portion connected to the film forming chamber in the exhaust pipe to a portion connected to the connection pipe.

  The pressure adjusting mechanism according to the present invention is also realized to include, for example, a means for measuring the pressure in the exhaust pipe and a pressure control valve for controlling the pressure measured by the means to be equal between the exhaust pipes. May be.

  The present invention also provides a vapor phase growth method characterized in that a film forming process is performed in each film forming chamber using the metal organic vapor phase growth apparatus of the present invention described above.

  In the vapor phase growth method of the present invention, the gas residence time of each branch mechanism deposition chamber pipe connected to the same branch mechanism, and all the branch mechanism deposition chamber pipes connected to the same branch mechanism It is preferable that the difference from the average gas residence time is ± 1 second or less.

  According to the present invention, it is possible to provide a metal-organic vapor phase growth apparatus and a vapor phase growth method that are capable of growing a large number of high-quality crystal films at low cost and having good film formation uniformity.

  FIG. 1 is a diagram schematically showing a metal organic vapor phase growth apparatus 1 according to a first embodiment of the present invention. The metal organic vapor phase growth apparatus according to the first embodiment of the present invention includes a plurality of types of metal organic material gas generators (in the example shown in FIG. 1, a trimethylgallium (TMG) generator 2 and a trimethylindium (TMI) generator). 3) and a plurality of branching mechanisms (in the example shown in FIG. 1, TMG connected to the TMG generator 2 via the TMG pipe 4) for branching each organometallic material gas generated by the organometallic material gas generator. A branch mechanism 6 for branching the supply pipe 5, a branch mechanism 9 for branching the TMI supply pipe 8 connected to the TMI generator 3 via the TMI pipe 7, and a plurality of film forming chambers (example shown in FIG. 1) Then, two film forming chambers 10, 11) and a plurality of branch mechanism inter-deposition chamber pipes for introducing each organometallic material gas branched by the branch mechanism into each film forming chamber through an independent piping system (In the example shown in FIG. The branch mechanism film-forming chamber pipes 12 and 13 connected between the branch mechanism 6 and the film forming chambers 10 and 11, respectively, and the branch mechanism film forming connected between the branch mechanism 9 and the film forming chambers 10 and 11, respectively. Inter-room piping 14, 15) is basically provided. In addition to the basic configuration described above, the metalorganic vapor phase growth apparatus of the present invention has a gas flow rate adjusting mechanism (in the example shown in FIG. A mass flow controller (MFC) 16, 17, 18, 19) provided in the middle of the inter-membrane chamber pipes 12, 13, 14, 15 is provided.

  As the organometallic material gas used in the organometallic vapor phase growth apparatus according to the first embodiment of the present invention, those conventionally used in the art can be appropriately used according to the desired film composition, and in particular. Although not limited, for example, at least 2 selected from trimethylgallium (TMG), trimethylindium (TMI), trimethylaluminum (TMA), triethylgallium (TEG), triethylaluminum (TEA), and triethylindium (TEI). Species can be preferably used. FIG. 1 shows an example in which TMG and TMI are used in combination as the organometallic material gas.

  As the organometallic material gas generator in the present invention, any conventionally known appropriate generator capable of generating the organometallic material gas to be used can be used, and it is not particularly limited. The organometallic material gas generator can be used by appropriately combining a plurality of types according to a desired film composition. Although FIG. 1 shows an example in which the TMG generator 2 and the TMI generator 3 are used in combination, it is of course not limited to this.

  The organometallic material gas generator of the present invention is usually provided with piping capable of supplying a carrier gas. As the carrier gas, a gas usually used in this field can be used without particular limitation. For example, hydrogen, nitrogen, etc. can be exemplified, but in the GaN crystal growth, the crystal quality is better when hydrogen is used as the carrier gas. Therefore, it is preferable to use hydrogen as a carrier gas. In the example shown in FIG. 1, hydrogen generated by a hydrogen source (not shown) is supplied through a hydrogen supply pipe 20, and this hydrogen supply pipe 20 is branched by branch mechanisms 21 and 22 provided midway. Thus, part of the hydrogen gas is configured to be supplied to the TMG supply pipe 5 and the TMI supply pipe 8 described above. Further, the hydrogen supply pipe 20 is also branched by a branch mechanism 23, and is configured to be supplied to the TMG generator 2 and the TMI generator 3 by a pipe 24 connected to the branch mechanism 23, respectively. A part of the hydrogen gas is supplied to the TMG supply pipe 5 via the vessel 2 and the TMG pipe 4, and to the TMI supply pipe 8 via the TMI generator 3 and the TMI pipe 7.

  In the metal organic vapor phase growth apparatus 1 shown in FIG. 1, the TMG vapor generated by the TMG generator 2 is mixed with hydrogen and supplied to the TMG supply pipe 5 via the TMG pipe 4. It branches, and is supplied to the film-forming chambers 10 and 11 via the branching mechanism film-forming chamber pipes 12 and 13, respectively. Similarly, the TMI vapor generated by the TMI generator 3 is mixed with hydrogen, supplied to the TMI supply pipe 8 via the TMI pipe 7, branched by the branch mechanism 9, and the branch mechanism inter-deposition chamber pipe 14. , 15 to the film forming chambers 10, 11 respectively.

  In the organometallic vapor phase growth apparatus of the present invention, the flow rate of the gas is adjusted to a plurality of branch mechanism inter-deposition chamber piping for introducing each organometallic material gas into each deposition chamber by an independent piping system. An obtained gas flow rate adjusting mechanism is provided. FIG. 1 shows an example in which the mass flow controllers (MFC) 16, 17, 18, and 19 provided in the middle of the branch mechanism inter-deposition chamber pipes 12, 13, 14, and 15 are provided as described above. Show. As the MFC used in the present invention, those widely used in the art can be used without particular limitation. Such MFCs 16, 17, 18, and 19 are provided in the middle of the branch mechanism inter-deposition chamber pipes 12, 13, 14, and 15, respectively, thereby mixing the TMG vapor and hydrogen branched by the branch mechanism 6. The gas and the mixed gas of TMI vapor and hydrogen branched by the branch mechanism 9 are supplied to the film forming chambers 10 and 11 with their supply flow rates controlled respectively.

  The organometallic vapor phase growth apparatus of the present invention generally includes a material gas supply mechanism for supplying a material gas other than the organometallic material gas according to a desired film composition. As a material gas other than the organometallic material gas, a material gas that has been widely used in the art can be used without particular limitation. The material gas other than the organometallic material gas is selected according to the desired non-metallic material type of the film, and examples thereof include group V material gases such as ammonia, arsine, and phosphine. In the growth of nitride compound semiconductors such as InGaN, the material gas other than the organometallic material gas preferably contains ammonia because it is relatively less dangerous and inexpensive.

  In the metal organic vapor phase growth apparatus 1 of the example shown in FIG. 1, ammonia gas generated by an ammonia source (not shown) is supplied via a group V material gas pipe 25 and a group V material gas supply pipe 26. It is comprised so that. The above-described hydrogen supply pipe 20 is connected to the group V material gas supply pipe 26 via a branch mechanism 27 so that hydrogen gas and ammonia gas are mixed in the group V material gas supply pipe 26. It is configured. Further, the V group material gas supply pipe 26 is branched in the middle of the branch mechanism 28, and the hydrogen gas and ammonia gas are mixed through the branch mechanism inter-deposition chamber pipes 29 and 30 connected to the branch mechanism 28. Gases are supplied to the film forming chambers 10 and 11, respectively.

  The film forming chambers 10 and 11 in the metal organic chemical vapor deposition apparatus 1 of the present invention usually have one or more substrates and a heating mechanism disposed therein. The material gas containing ammonia, TMG, and TMI introduced into the film forming chambers 10 and 11 is brought into contact with the substrate while being heated by the heating mechanism while mixing and causes a chemical reaction to form an InGaN crystal film on the substrate. . Although FIG. 1 illustrates the case where two film forming chambers 10 and 11 are provided, in the present invention, of course, two or more film forming chambers may be provided. According to the number of film chambers, a branch mechanism inter-chamber piping is provided so that the organometallic material gas is branched and supplied.

  According to the organometallic vapor phase growth apparatus of the first embodiment of the present invention, when a mixed crystal film is grown using a plurality of types of organometallic materials, a mixed crystal between a plurality of film forming chambers is used. The feed material can be adjusted so that the difference in composition ratio is eliminated, and crystal growth with good mixed crystal ratio uniformity can be realized.

  More specifically, the flow rate of the mixed gas of TMG vapor and hydrogen supplied to the film forming chambers 10 and 11 is basically supplied by the MFCs 16 and 17 in an equal amount. In addition, the flow rate of the mixed gas of TMI vapor and hydrogen supplied to the film forming chambers 10 and 11 is also supplied in principle by the MFCs 18 and 19 in an equal amount. Under ideal conditions in which both film forming chambers 10 and 11 have the same structure and the same gas heating state, the mixed gas of TMG vapor and hydrogen and TMI vapor and TMI vapor are equally applied to both film forming chambers 10 and 11. If a mixed gas with hydrogen is supplied, the same crystal film should grow in both the film forming chambers 10 and 11, but actually, a minute condition difference between the film forming chambers 10 and 11 (for example, a flow path) The film formation chamber is different due to the difference in gas flow due to the difference in processing dimensions of the components, the difference in the heating state due to the difference in the state of deposits on the film formation chamber wall, the difference in the pressure in the film formation chamber due to the difference in the clogging of the exhaust pipe, etc. Differences in film thickness, composition ratio, and the like occur in the grown crystal film between 10 and 11.

  In the growth of the InGaN film, the V / III ratio obtained by dividing the number of moles of ammonia gas, which is a group V material, by the number of moles of TMG and TMI, which are group III materials, is a high ratio of about several thousand. In general, the film is formed under excessive supply conditions. Under such a high V / III ratio situation, the supply amount of ammonia gas does not greatly affect the film formation result. The supply amount of the group III material corresponds to the growth rate of the InGaN film, and the ratio between the supply amount of TMG and the supply amount of TMI corresponds to the ratio of GaN and InN in the InGaN crystal. In general, the correspondence between the supply amount of the group III material and the growth rate of the InGaN film is not a linear proportional relationship, and the ratio of the supply amount of TMG and the supply amount of TMI is also similar to the GaN in the InGaN crystal. It is not linearly proportional to InN.

  Therefore, for example, when the In ratio in the InGaN crystal (InN / (GaN + InN)) is higher in the crystal film grown in the film forming chamber 10, the MFC 18 is controlled as the In ratio adjustment operation. The TMI supply amount to the film forming chamber 10 can be reduced, and the In ratio in the crystal film grown in the film forming chamber 10 can be adjusted to be equal to the In ratio grown in the film forming chamber 11. . Further, for example, when the film thickness of the crystal grown in the film formation chamber 10 is smaller than the film thickness of the crystal grown in the film formation chamber 11, the film formation controlled by the MFC 16 is performed as the film thickness adjustment operation. The crystal film grown in the film formation chamber 11 by increasing the TMG supply amount to the chamber 10 and the TMI supply amount to the film formation chamber 10 controlled by the MFC 18 and growing in the film formation chamber 11 It can also be adjusted to be equal to the thickness. In general, even if both TMG and TMI are increased at the same magnification, the In ratio in the InGaN crystal may slightly change, but by repeating the above In ratio adjustment operation and film thickness adjustment operation, A crystal film having a desired uniformity can be grown between the film formation chamber 1 and the film formation chamber 2.

  As in the example shown in FIG. 1, the organometallic vapor phase growth apparatus of the present invention normally has a vent pipe for deriving these to the exhaust gas pipe 33 when any of the organometallic material gases is not used for film formation. (Group III gas vent pipe 31) and a vent pipe (Group V gas vent pipe 32) for deriving this to the exhaust gas pipe 33 when a material gas other than the organometallic material gas is not used for film formation. The group 34 gas vent pipe 31 is connected with pipes 34 and 35 in which the TMG pipe 4 and the TMI pipe 7 are branched in the middle, and the hydrogen supply pipe 20 is also branched and connected in the middle. The group V gas vent pipe 32 is connected to a pipe 36 in which the group V material gas pipe 25 is branched, and the hydrogen supply pipe 20 is also branched and connected. In addition to the group III gas vent pipe 31 and the group V gas vent pipe 32 described above, the exhaust gas pipe 33 is connected to exhaust pipes 37 and 38 for leading out the exhaust gas from the film forming chambers 10 and 11, respectively. Exhaust gas is discharged to a device (not shown).

  In the metal organic chemical vapor deposition apparatus 1 shown in FIG. 1, the TMG pipe 4 connected to the TMG generator 2, the pipe 34 branched from the TMG pipe 4 and connected to the group III gas vent pipe 31, and the TMI Valves 39, 40, 41, and 42 are provided in the middle of the TMI pipe 7 connected to the generator 3 and the pipe 35 branched from the TMI pipe and connected to the group III gas vent pipe 31, respectively. Valves 43 and 44 are also provided in the group V material gas pipe 25 and the pipe 36 branched from the group V material gas pipe 25 and connected to the group V gas vent pipe 32, respectively. The valves 39 and 40 are controlled to open and close depending on whether or not a mixed gas of TMG vapor and hydrogen is used for film formation. That is, when a mixed gas of TMG vapor and hydrogen is used for film formation, the mixed gas of TMG vapor and hydrogen is supplied to the TMG supply pipe 5 by opening the valve 39 and closing the valve 40. Then, as described above, the film forming chambers 10 and 11 are supplied. On the other hand, when a mixed gas of TMG vapor and hydrogen is not used for film formation, the valve 39 is closed and the valve 40 is opened, so that the mixed gas of TMG vapor and hydrogen is supplied to the group III vent pipe 31. It is discharged and discharged to an exhaust gas treatment device (not shown) through the exhaust gas pipe 33. The valves 41 and 42 are similarly controlled to open and close depending on whether or not a mixed gas of TMI vapor and hydrogen is used for film formation. Similarly, the valves 43 and 44 are controlled to open and close depending on whether or not ammonia gas is used for film formation.

  In the organometallic vapor phase growth apparatus 1 of the present invention, as shown in the example shown in FIG. 1, a pipe 24, a TMG supply pipe 5, and a TMI supply that branch-connect the hydrogen supply pipe 20, the TMG generator 2, and the TMI generator 3. MFCs 45, 46, 47, 48, 49, 50, 51, 52 are respectively provided in the middle of the pipe 8, the group V material gas pipe 25, the group V material gas supply pipe 26, the group III vent pipe 31 and the group V vent pipe 32. It is preferable to be provided and configured to control the supply flow rate in each pipe.

  Further, as in the example shown in FIG. 1, the organometallic vapor phase growth apparatus of the present invention is provided with a pressure gauge 53 in the middle of the TMG gas supply pipe 5, and further branches to a group III gas vent pipe 31 via the pipe 54. It is connected. A pressure control valve 55 incorporating a mechanism controlled by the output of the pressure gauge 53 is provided in the middle of the pipe 54. Similarly, a pressure gauge 56 is provided in the middle of the TMI gas supply pipe 8, and further branched and connected to the group III gas vent pipe 31 through the pipe 57, and is controlled by the output of the pressure gauge 56 in the middle of the pipe 57. A pressure control valve 58 having a built-in mechanism is provided. With such a configuration, surplus gas in the TMG gas supply pipe 5 and the TMI gas supply pipe 8 is discharged to the group III gas vent pipe 31, and the pressure in the TMG gas supply pipe 5 and the TMI gas supply pipe 8 is changed to the pressure. It can be controlled to a constant value set by the control valves 54 and 57, respectively.

  FIG. 2 is a diagram schematically showing a metal organic vapor phase growth apparatus 61 according to the second embodiment of the present invention. 2 has almost the same configuration as the organometallic vapor phase growth apparatus 1 of the example shown in FIG. 1 except for a part thereof. About the part which has, the same reference mark is attached | subjected and description is abbreviate | omitted.

  The metalorganic vapor phase growth apparatus 61 according to the second embodiment of the present invention includes an organometallic material gas generator (TMG generator 2 in the example shown in FIG. 2) and a dopant material gas supply mechanism (example shown in FIG. 2). Then, a silane gas generation source (not shown) and a silane gas pipe 62), and a plurality of dopant material gases supplied by an organometallic material gas generator and a dopant material gas supply mechanism are branched. Branching mechanism 6 (in the example shown in FIG. 2, a branching mechanism 6 for branching the TMG supply pipe 5 connected to the TMG generator 2 via the TMG pipe 4 and a silane gas supply pipe 63 connected to the silane gas pipe 62 are provided. A branching mechanism 64) for branching, a plurality of film forming chambers (two film forming chambers 10 and 11 in the example shown in FIG. 2), and each organometallic material gas branched by the branching mechanism. And a plurality of branch mechanism inter-deposition chamber pipes (in the example shown in FIG. 2, between the branch mechanism 6 and the film formation chambers 10 and 11) for introducing each dopant material gas into each film formation chamber through an independent piping system. The branch mechanism film-forming chamber pipes 12 and 13 connected to each other, and the branch mechanism film-forming chamber pipes 65 and 66) respectively connected between the branch mechanism 64 and the film forming chambers 10 and 11 are basically provided. . In addition to the basic configuration described above, the metalorganic vapor phase growth apparatus of the present invention has a gas flow rate adjusting mechanism (in the example shown in FIG. A mass flow controller (MFC) 16, 17, 67, 68) provided in the middle of the inter-membrane chamber pipes 12, 13, 65, 66 is provided.

  The organometallic material gas used in the organometallic vapor phase growth apparatus 61 of the second embodiment of the present invention of the example shown in FIG. 2 is not particularly limited, but the organic of the first embodiment of the present invention. Selected from the above-mentioned trimethylgallium (TMG), trimethylindium (TMI), trimethylaluminum (TMA), triethylgallium (TEG), triethylaluminum (TEA), and triethylindium (TEI), which are preferably used in the metal vapor phase growth apparatus 1. At least one selected from the above can be preferably used. In the second embodiment, one or more kinds of organometallic material gases can be used as appropriate according to the desired film composition. FIG. 2 illustrates the case where the TMG generator 2 is used as the organometallic material gas generator. However, the present invention is not limited to this, and a plurality of organometallic material gases may be used depending on the purpose. A generator may be provided.

  The dopant material gas supplied by the dopant material gas supply mechanism used in the metal organic vapor phase growth apparatus 61 of the second embodiment of the present invention shown in FIG. 2 is not particularly limited. A dopant material gas that has been widely used in the field can be appropriately selected and used according to a desired film composition. Examples of such dopant material gas include silane. In the second embodiment of the present invention, a plurality of dopant material gases may be used.

  In the example shown in FIG. 2, the silane gas that is the dopant material gas is supplied to the silane gas supply pipe 63 via the silane gas pipe 62. A hydrogen supply pipe 20 for supplying hydrogen as a carrier gas is branchedly connected to the silane gas supply pipe 63 via a branch mechanism 69, and a mixed gas of silane gas and hydrogen is obtained in the silane gas supply pipe 63. The mixed gas of silane gas and hydrogen is branched by the branch mechanism 64 and supplied to the film formation chambers 10 and 11 via the branch mechanism inter-deposition chamber pipes 65 and 66. At this time, the mixed gas of silane gas and hydrogen is supplied while the flow rate is controlled by the MFCs 67 and 68 provided in the middle of the branch mechanism inter-deposition chamber pipes 65 and 66, respectively.

  According to the metal organic vapor phase growth apparatus 61 of the second embodiment of the present invention as shown in FIG. 2, when growing a crystal film mixed with a dopant, the dopant concentration between a plurality of film forming chambers is increased. The feed material can be adjusted so as to eliminate the difference, and crystal growth with good dopant concentration uniformity can be realized. Even when an organic metal material gas is used in combination with a dopant material gas, a minute difference in conditions between the film forming chambers 10 and 11 (for example, a difference in gas flow due to a processing dimension difference in the flow path component, to the wall of the film forming chamber) The difference in the heating state due to the difference in the state of deposits, the difference in the pressure in the film formation chamber due to the difference in the clogging of the exhaust pipe, etc.) Differences such as dopant concentration occur. In the metal organic chemical vapor deposition apparatus 61 of the second embodiment, for example, the crystal film grown in the film forming chamber 10 has a higher Si dopant concentration than the crystal film grown in the film forming chamber 11. In this case, the amount of silane gas supplied to the film formation chamber 10 controlled by the MFC 67 is decreased, and the Si dopant concentration in the crystal film grown in the film formation chamber 10 is increased in the film formation chamber 11. It can also be adjusted to be equal to the Si dopant concentration of the film.

  In the example shown in FIG. 2, as with the TMG pipe 4, the silane gas pipe 62 is branched halfway and connected to the group III vent pipe 31 via the pipe 70. In the middle of the silane gas pipe 62 and the pipe 70, valves 71 and 72 are similarly provided, and are configured to be controlled to open and close depending on whether or not silane gas is used. Further, in the example shown in FIG. 2, MFCs 73 and 74 are provided in the middle of the silane gas pipe 62 and the silane gas supply pipe 63, respectively, so that the supply flow rate of the silane gas can be controlled.

  In addition, a pressure gauge 75 is provided in the middle of the silane gas supply pipe 63, and is further branchedly connected to the group III gas vent pipe 31 through the pipe 76. The mechanism controlled by the output of the pressure gauge 75 is provided in the middle of the pipe 76. Is provided. With this configuration, as with the TMG gas supply pipe 5, the silane gas supply pipe 63 also discharges excess gas to the group III gas vent pipe 31, and the pressure in the silane gas supply pipe 63 is set by the pressure control valve 77. Can be controlled to a constant value.

In the metal organic chemical vapor deposition apparatus of the present invention, the internal volume of each branch mechanism deposition chamber pipe connected to the same branch mechanism is between all the branch mechanism deposition chambers connected to the same branch mechanism. It is preferable that it is ± 2% or less of the average value of the internal volume of the pipe. Referring to the metalorganic vapor phase epitaxy apparatus 1 of the example shown in FIG. 1, each branch mechanism film-forming chamber connected to the same branch mechanism, for example, a branch mechanism film connected to the branch mechanism 6 When the internal volume of the inter-chamber pipe 12 is A and the internal volume of the branch mechanism inter-compartment chamber pipe 13 connected to the branch mechanism 6 is B, all the branch mechanism film formation chambers connected to the same branch mechanism. The average value C of the internal volumes of the branch mechanism inter-deposition chamber pipes 12 and 13 connected to the branch mechanism 6, which is the average value of the inner volume of the intermediate pipe, is calculated by C = (A + B) / 2. Here, the “inner volume” is calculated as the product of the cross-sectional area and the length of the pipe. When the pipe has a part with a different cross-sectional area, the product of the length is calculated for each part having the same cross-sectional area. Refers to the value added together. In the organometallic vapor phase growth apparatus of the present invention, each value A and C or B and C calculated as described above is
C × 98% ≦ A or B ≦ C × 102%
It is preferable to be configured to satisfy the following relationship.

  In general, the gas flow rate controlled by the MFC 16 and flowing through the branch mechanism film forming chamber pipe 12 is not significantly different from the gas flow rate controlled by the MFC 17 and flowing through the branch mechanism film forming chamber pipe 13. Therefore, assuming that they are equal here, the magnitude of the difference between the values A and B calculated as described above is the amount of time until the TMG generated by the TMG generator 2 reaches the film forming chamber 10. This means the magnitude of the difference between the time and the time to reach the film formation chamber 11.

  When an element structure such as an LED is formed, crystal films having different compositions must be stacked and grown. In order to change the composition of the crystal, the concentration or amount of the material gas to be supplied is changed. For example, when the gas concentration of TMG generated by the TMG generator 2 is changed, the value calculated as described above. When A or B does not satisfy the above relationship with the value C, the time until the effect of changing the TMG gas is reflected in the film forming chamber 10 and the time until the effect in the film forming chamber 11 is reflected. Are significantly different from each other, resulting in a difference in the film formation results of the laminated film between the film forming chambers 10 and 11, which is not preferable.

  If only the gas concentration of TMG generated by the TMG generator 2 is changed, the film formation in the film formation chamber connected to the pipe between the branch mechanism film formation chambers with the larger internal volume is delayed in start time, Although the end time may be delayed by the same time as the start time delay, the same film may be formed in both film forming chambers, but in reality, heating in the film forming chamber is performed for each crystal composition to be formed. The growth conditions such as the temperature are immediately changed in both deposition chambers. From this point of view, it is particularly preferable that the internal volumes of the pipes between the branch mechanism film forming chambers connected to the same branch mechanism are equalized.

  It is preferable to reduce as much as possible the difference in the internal volume of the pipes between the branching mechanism film forming chambers connected to the same branching mechanism as described above, and the branching mechanism film forming connected to the branching mechanism 6 mentioned in the above example. Not only the inter-chamber pipes 12 and 13, but also the branch-mechanism film-forming chamber pipes 14 and 15 connected to the branch mechanism 9, and the branch-mechanism film-forming chamber pipe connected to the branch mechanism 64 in the example shown in FIG. The same applies to 65 and 66.

  As described above, the internal volume of each branch mechanism deposition chamber pipe connected to the same branch mechanism is equal to the inner volume of all the branch mechanism deposition chamber pipes connected to the same branch mechanism. A specific method of adjusting the average value to ± 2% or less includes a method of adjusting by appropriately changing the thickness and / or length of the piping between the branching mechanism film forming chambers. In this case, it is easier to adjust the length of the piping between the branching mechanism film forming chambers than to change the thickness of the piping between the branching mechanism film forming chambers.

  The organometallic vapor phase growth apparatus of the present invention preferably further includes a pressure adjusting mechanism for adjusting the pressure in the exhaust pipe for leading the exhaust gas from each film forming chamber to the exhaust pipe. If the pressure in each film forming chamber is different, there is a possibility that the actual crystal growth state may be different even if a gas having a controlled flow rate is given to each growth chamber using MFC. By adjusting the internal pressure, the pressure between the film forming chambers can be adjusted to be equal, and the difference in the crystal growth state between the film forming chambers can be reduced.

  FIG. 3 schematically shows a metal organic vapor phase epitaxy apparatus 81 according to the third embodiment of the present invention, which is provided with an example of such a pressure adjusting mechanism. The example of the metal organic vapor phase growth apparatus 81 shown in FIG. 3 has the same configuration as the metal organic vapor phase growth apparatuses 1 and 61 shown in FIGS. The parts having the same configuration are denoted by the same reference numerals as those in FIGS. 1 and 2, and the description thereof is omitted. The metal organic vapor phase growth apparatus 81 of the example shown in FIG. 3 is a pressure adjusting mechanism for adjusting the pressure in the exhaust pipes 37 and 38 for leading the exhaust gas from the film forming chambers 10 and 11 to the exhaust gas pipe 33. As described above, a connecting pipe 82 for branching the exhaust pipes 37 and 38 is provided. By providing such a connection pipe 82, the pressure in the exhaust pipes 37 and 38 can be adjusted to be equal.

  However, simply providing the connecting pipe 82 for branch connection between the exhaust pipes 37 and 38 may cause the total gas amount introduced into the film forming chamber 10 to be, for example, the film forming chamber 10 due to operational mistakes, maintenance work, or other factors. 11, the gas flowing into the connection pipe 82 from the exhaust pipe 37 connected to the film formation chamber 10 does not go to the exhaust gas pipe 33, but moves toward the film formation chamber 11. There is a risk that dust or the like that flows backward and accumulates in the exhaust pipe 38 may contaminate the film forming chamber 11.

  For this reason, in the metal organic chemical vapor deposition apparatus of the present invention, when the pressure control mechanism is realized by providing the connection pipe 82 for branch connection between the exhaust pipes 37 and 38 as in the example shown in FIG. It is preferable that the pipe line resistance value of the connection pipe 82 is twice or more the pipe line resistance of the pipes 83 and 84 from the portion of the exhaust pipes 37 and 38 where the connection pipe 82 is connected to the exhaust gas pipe. Thereby, for example, even when the total gas amount introduced into the film forming chamber 10 is significantly larger than the total gas amount introduced into the film forming chamber 11, most of the gas derived from the film forming chamber 10 is Since it goes to the exhaust gas pipe 33 without going to the connection pipe 82, the possibility of backflow to the film forming chamber 11 through the connection pipe 82 can be reduced. The pipe resistance value can be calculated as a value obtained by multiplying the square of pipe length / pipe diameter × pipe flow velocity by a constant when the roughness of the pipe inner surface is constant, for example, in a circular cross-section pipe, as described above. The pipe resistance value between the connection pipe 82 and the pipes 83 and 84 can be appropriately adjusted by the thickness and / or length (preferably the length of the pipe) of these pipes.

  Note that the example shown in FIG. 3 differs from the metal organic vapor phase growth apparatuses 1 and 61 of the example shown in FIGS. 1 and 2 in that two organometallic material gas generators, a TMG generator 2 and a TMI generator 3 are used. And a silane gas pipe 62 and a silane gas supply pipe 71 as a dopant material gas supply mechanism, each of which is configured to supply material gas to the two film forming chambers 10 and 11 through independent pipe systems. ing. Such a configuration is also included in the scope of the present invention.

  FIG. 4 is a diagram schematically showing a metal organic vapor phase growth apparatus 86 according to the fourth embodiment of the present invention. The metal-organic vapor phase growth apparatus 86 of the example shown in FIG. 4 has the same configuration as the metal-organic vapor phase growth apparatus 81 of the example shown in FIG. The portions having the same reference numerals are denoted by the same reference numerals, and the description thereof is omitted. The metal organic vapor phase growth apparatus 86 of the example shown in FIG. 4 includes a connection pipe 82 for branching connection between the exhaust pipes 37 and 38, and a portion connected to the film forming chambers 10 and 11 in the exhaust pipes 37 and 38. Check pipes 89 and 90 are provided on the pipes 87 and 88 to the portion to which the connection pipe 82 is connected, respectively. Thus, it is preferable that the check valves 89 and 90 are provided in the pipes 87 and 88 because the backflow to the film forming chamber through the connection pipe 82 as described above can be prevented.

  FIG. 5 is a diagram schematically showing a metal organic vapor phase growth apparatus 91 according to a fifth embodiment of the present invention. The metal organic vapor phase growth apparatus 91 of the example shown in FIG. 5 has the same configuration as the metal organic vapor phase growth apparatus 81 of the example shown in FIG. The portions having the same reference numerals are denoted by the same reference numerals, and the description thereof is omitted. The pressure adjusting mechanism in the metal organic chemical vapor deposition apparatus of the present invention is measured by means for measuring the pressure in the exhaust pipes 37 and 38 (pressure gauges 92 and 93) and the means as shown in the example shown in FIG. Alternatively, the pressure control valves 94 and 95 may be provided to control the exhaust pipes 37 and 38 so that the pressures are equal. According to such a pressure adjustment mechanism, the film formation chamber 10 is set by setting the control pressure values of the pressure control valves 94 and 95 having built-in mechanisms respectively controlled by outputs from the pressure gauges 92 and 93 to the same value. And the pressures of the exhaust pipes 37 and 38 between the film forming chamber 11 and the film forming chamber 11 can be evenly adjusted.

  The present invention also provides a vapor phase growth method in which a film forming process is performed in each film forming chamber using the above-described metal organic vapor phase growth apparatus of the present invention. The vapor phase growth method of the present invention is not particularly limited with respect to the material gas used, the procedure, the conditions and the like as long as the apparatus of the present invention described above is used.

In the vapor phase growth method of the present invention, the gas residence time of each branch mechanism deposition chamber pipe connected to the same branch mechanism, and all the branch mechanism deposition chamber pipes connected to the same branch mechanism The difference from the average gas residence time is preferably ± 1 second or less. A case where the method of the present invention is performed using the metal organic vapor phase growth apparatus 1 of the example shown in FIG. 1 will be described as an example. For example, a branch mechanism inter-deposition chamber pipe 12 connected to a branch mechanism 6, Assuming that the values of the internal volume of 13 (the definition of the internal volume is as described above) are A and B, respectively, the gas residence time t _A in the branch mechanism inter-deposition chamber pipe 12 is
t _A = A / (Set flow rate of MFC16)
Similarly, the gas residence time t _B in the branch mechanism inter-deposition chamber pipe 13 is calculated as follows:
t _B = B / (Set flow rate of MFC17)
Is calculated by Then, the average gas residence time t _M of all the branch mechanism inter-deposition chamber pipes 12 and 13 connected to the same branch mechanism 6 is
t _M = (t _A + t _B ) / 2
Is calculated by In such a case, according to the method of the present invention,
It is preferable that the relationship t _M −1 second ≦ t _A or t _B ≦ t _M +1 second is satisfied.

  As described above, for example, when the mixed gas containing TMG vapor generated by the TMG generator 2 reaches the film forming chamber 10 and the time until it reaches the film forming chamber 11 is different. This causes a difference in the film formation state between the film formation chambers 10 and 11. In the method of the present invention, the gas residence time of each branch mechanism film-forming chamber pipe connected to the same branch mechanism and the average gas residence of all the branch mechanism film-forming chamber pipes connected to the same branch mechanism By controlling so that the difference from the time is ± 1 second or less (more preferably, the respective gas residence time and the average gas residence time are the same), the formation between the film forming chambers 10 and 11 is controlled. This is preferable because the difference in the film state can be reduced. In the example of the metal-organic vapor phase epitaxy apparatus 1 shown in FIG. 1, the branch mechanism inter-deposition chamber pipes 12 and 13 connected to the branch mechanism 6 have been described as examples, but are connected to the branch mechanism 9. The same conditions are applied to the branch mechanism film forming chamber pipes 14 and 15 and the branch mechanism film forming chamber pipes 65 and 66 connected to the branch mechanism 64 in the metalorganic vapor phase growth apparatus 61 of the example shown in FIG. It is preferable to satisfy. The gas residence time can be appropriately adjusted by changing the thickness and / or length of the pipe (preferably the length of the pipe), as described above.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited to these.

<Example 1>
Using the metalorganic vapor phase growth apparatus 91 of the present invention of the example shown in FIG.

  One sapphire substrate having a diameter of 2 inches was placed on each heating stage in the film forming chambers 10 and 11, and heated. Both control pressure settings of the pressure control valves 94 and 95 are set to 103 kPa, and the ammonia gas is branched by the branch mechanism 28 via the V group material gas pipe 25 and the V group material gas supply pipe 26, and between the branch mechanism film forming chambers. The films were supplied to the film forming chambers 10 and 11 through the pipes 29 and 30, respectively. Further, the mixed gas containing TMG vapor generated by the TMG generator 2 is branched by the branch mechanism 6 via the TMG pipe 4 and the TMG supply pipe 5, and the film forming chamber is provided via the branch mechanism inter-deposition chamber pipes 12 and 13. 10 and 11, respectively. Similarly, the mixed gas containing the TMI vapor generated by the TMI generator 3 is branched by the branch mechanism 9 via the TMI pipe 7 and the TMI supply pipe 8, and via the branch mechanism inter-deposition chamber pipes 14 and 15. It supplied to the film-forming chambers 10 and 11, respectively. In this way, while appropriately controlling the supply flow rates of TMG and TMI with the MFCs 16, 17, 18, and 19, the GaN buffer layer, the undoped GaN layer, and the InGaN / GaN layers are formed on the sapphire substrate in the film forming chambers 10 and 11. The stacked films were grown in the order of MQW (Multi Quantum Well) layers.

  In the first growth, the set flow rates of MFCs 16, 17, 18, and 19 at the time of MQW growth were set to be equal. When the In ratio (InN / (GaN + InN)) of the InGaN layer of the MQW layer at the center portion of the substrate in the obtained laminated film was measured, it was 3.0% in the film forming chamber 10 and 3.3% in the film forming chamber 11. Met.

  In the second growth, the growth was performed by setting only the set flow rate of the MFC 18 that controls the TMI flow rate of the film forming chamber 10 during the MQW growth to 1.1 times that of the first growth. When the In ratio of the InGaN layer of the MQW layer at the center of the substrate in the obtained laminated film was measured, it was 3.2% in the film forming chamber 10 and 3.3% in the film forming chamber 11.

  In the third growth, only the set flow rate of the MFC 18 for controlling the TMI flow rate in the film forming chamber 10 during the MQW growth was set to 1.15 times the first growth rate. When the In ratio of the InGaN layer of the MQW layer in the central portion of the substrate in the obtained laminated film was measured, it was 3.3% in the film formation chamber 10 and 3.3% in the film formation chamber 11. It was possible to make the In ratio at the same value as that in the film forming chamber 11.

  From the above results, by performing vapor phase growth using the metal organic vapor phase growth apparatus of the present invention, it is possible to reduce the difference in film formation results among a plurality of film formation chambers and improve the film formation uniformity. Was confirmed.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a figure showing typically metalorganic vapor phase growth apparatus 1 of the 1st embodiment. It is a figure which shows typically the organometallic vapor phase growth apparatus 61 of a 2nd embodiment. It is a figure which shows typically the organometallic vapor phase growth apparatus 81 of a 3rd embodiment. It is a figure which shows typically the organometallic vapor phase growth apparatus 86 of the 4th embodiment. It is a figure which shows typically the organometallic vapor phase growth apparatus 91 of the 5th embodiment. It is a figure which shows typically the typical example of the conventional organometallic vapor phase growth apparatus. It is a figure which shows typically the typical example of the conventional organometallic vapor phase growth apparatus.

Explanation of symbols

  1, 61, 81, 86, 91 Metalorganic vapor phase growth apparatus, 2 TMG generator, 3 TMI generator, 4 TMG piping, 5 TMG supply piping, 6 branch mechanism, 7 TMI piping, 8 TMI supply piping, 9 branch Mechanism 10, 11 Deposition chamber, 12, 13, 14, 15 Branch mechanism Inter-deposition chamber piping, 16, 17, 18, 19 MFC, 25 V group material gas piping, 26 V group material gas supply piping, 28 branch Mechanism, 29, 30 Branch mechanism Inter-deposition chamber piping, 31 Group III gas vent piping, 32 Group V gas vent piping, 33 Exhaust gas piping, 37, 38 Exhaust piping, 62 Silane gas piping, 63 Silane gas supply piping, 64 Branch mechanism, 65, 66 Branch mechanism piping between film forming chambers, 67, 68 MFC, 82 connection piping, 89, 90 check valve, 92, 93 pressure gauge, 94, 95 pressure control valve.

Claims (14)

A plurality of organometallic material gas generators,
A plurality of branching mechanisms for branching each organometallic material gas generated by the organometallic material gas generator;
A plurality of deposition chambers;
A plurality of branch mechanism inter-deposition chamber piping for introducing each organometallic material gas branched by the branch mechanism into each deposition chamber in an independent piping system;
An organometallic vapor phase growth apparatus characterized in that a gas flow rate adjusting mechanism capable of adjusting a gas flow rate is provided in each branching mechanism piping. An organic metal material gas generator;
A dopant material gas supply mechanism;
A plurality of branching mechanisms for branching the organometallic material gas generated by the organometallic material gas generator and the dopant material gas supplied by the dopant material gas supply mechanism, respectively;
A plurality of deposition chambers;
A plurality of branch mechanism inter-deposition chamber pipes for introducing each organometallic material gas and each dopant material gas branched by the branch mechanism into each film formation chamber in an independent piping system,
An organometallic vapor phase growth apparatus characterized in that a gas flow rate adjusting mechanism capable of adjusting a gas flow rate is provided in each branching mechanism piping.   The organometallic vapor phase growth apparatus according to claim 1, further comprising a material gas supply mechanism that supplies a material gas other than the organometallic material gas.   4. The metal organic chemical vapor deposition apparatus according to claim 3, wherein the material gas supplied from the material gas supply mechanism contains ammonia.   The type of organometallic material gas generated by the organometallic material gas generator includes any of trimethylgallium, trimethylaluminum, trimethylindium, triethylgallium, triethylaluminum, and triethylindium. The organometallic vapor phase growth apparatus according to any one of the above.   The metal-organic vapor phase epitaxy apparatus according to claim 2, wherein the dopant material gas contains silane.   The internal volume of each branch mechanism film forming chamber pipe connected to the same branch mechanism is ± 2% or less of the average value of the internal volume of all the branch mechanism film forming chamber pipes connected to the same branch mechanism. The metal organic chemical vapor deposition apparatus according to claim 1, wherein   The organic metal according to any one of claims 1 to 7, further comprising a pressure adjusting mechanism for adjusting a pressure in the exhaust pipe for leading the exhaust gas from each film forming chamber to the exhaust gas pipe. Vapor growth equipment.   The metal organic chemical vapor deposition apparatus according to claim 8, wherein the pressure adjusting mechanism is a connection pipe that connects exhaust pipes to each other.   10. The organometallic gas according to claim 9, wherein the pipe resistance value of the connection pipe is at least twice the pipe resistance of the pipe from the portion of the exhaust pipe where the connection pipe is connected to the exhaust pipe. Phase growth equipment.   10. The metal organic chemical vapor deposition apparatus according to claim 9, wherein a check valve is provided in a pipe from a portion connected to the film formation chamber in the exhaust pipe to a portion connected to the connection pipe.   The organic metal according to claim 8, wherein the pressure adjusting mechanism includes means for measuring pressure in the exhaust pipe and a pressure control valve for performing control so that the pressure measured by the means becomes equal between the exhaust pipes. Vapor growth equipment.   A vapor phase growth method, wherein a film formation process is performed in each film formation chamber using the metalorganic vapor phase growth apparatus according to claim 1.   The difference between the gas residence time of each branch mechanism deposition chamber pipe connected to the same branch mechanism and the average gas residence time of all the branch mechanism deposition chamber pipes connected to the same branch mechanism is ± The vapor phase growth method according to claim 13, wherein the vapor phase growth method is 1 second or less.

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