WO2013058477A3 - 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 - Google Patents

결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 Download PDF

Info

Publication number
WO2013058477A3
WO2013058477A3 PCT/KR2012/007130 KR2012007130W WO2013058477A3 WO 2013058477 A3 WO2013058477 A3 WO 2013058477A3 KR 2012007130 W KR2012007130 W KR 2012007130W WO 2013058477 A3 WO2013058477 A3 WO 2013058477A3
Authority
WO
WIPO (PCT)
Prior art keywords
texture etching
crystalline silicon
fluid composition
silicon wafers
etching method
Prior art date
Application number
PCT/KR2012/007130
Other languages
English (en)
French (fr)
Other versions
WO2013058477A2 (ko
Inventor
홍형표
이재연
박면규
임대성
Original Assignee
동우화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110106968A external-priority patent/KR101933527B1/ko
Priority claimed from KR1020120080780A external-priority patent/KR20130043051A/ko
Application filed by 동우화인켐 주식회사 filed Critical 동우화인켐 주식회사
Priority to JP2014535640A priority Critical patent/JP2014534630A/ja
Priority to CN201280051761.9A priority patent/CN103890139A/zh
Publication of WO2013058477A2 publication Critical patent/WO2013058477A2/ko
Publication of WO2013058477A3 publication Critical patent/WO2013058477A3/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)

Abstract

본 발명은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것으로서, 보다 상세하게는 질소 원자를 포함하는 탄소수 4 내지 10인 고리 화합물로 치환된 단량체가 중합된 고분자를 포함함으로써, 결정성 실리콘 웨이퍼의 표면에 미세 피라미드 구조를 형성함에 있어서 위치별 텍스쳐의 품질 편차를 최소화하여 광 효율을 증가시키고, 반사율을 저감시킬 수 있는 특정 구조의 피라미드를 형성할 수 있는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것이다.
PCT/KR2012/007130 2011-10-19 2012-09-05 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 WO2013058477A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014535640A JP2014534630A (ja) 2011-10-19 2012-09-05 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法
CN201280051761.9A CN103890139A (zh) 2011-10-19 2012-09-05 结晶性硅晶片的织构蚀刻液组合物及织构蚀刻方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2011-0106967 2011-10-19
KR10-2011-0106968 2011-10-19
KR1020110106968A KR101933527B1 (ko) 2011-10-19 2011-10-19 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
KR20110106967 2011-10-19
KR10-2012-0080780 2012-07-24
KR1020120080780A KR20130043051A (ko) 2011-10-19 2012-07-24 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

Publications (2)

Publication Number Publication Date
WO2013058477A2 WO2013058477A2 (ko) 2013-04-25
WO2013058477A3 true WO2013058477A3 (ko) 2013-06-06

Family

ID=48141506

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/007130 WO2013058477A2 (ko) 2011-10-19 2012-09-05 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

Country Status (1)

Country Link
WO (1) WO2013058477A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088712A (ja) * 2013-11-01 2015-05-07 日本酢ビ・ポバール株式会社 テクスチャエッチング液、テクスチャエッチング液用添加剤液、テクスチャ形成基板及びテクスチャ形成基板の製造方法並びに太陽電池
TWI635160B (zh) * 2014-03-07 2018-09-11 東友精細化工有限公司 紋理蝕刻溶液組成物及晶體矽晶圓紋理蝕刻方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100227432A1 (en) * 2009-03-03 2010-09-09 Kashkoush Ismail I Method for selective under-etching of porous silicon
US20110070744A1 (en) * 2009-09-18 2011-03-24 Zhi-Wen Sun Silicon Texturing Formulations for Solar Applications
WO2011056948A2 (en) * 2009-11-05 2011-05-12 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
EP2372779A2 (en) * 2010-04-01 2011-10-05 SolarWorld Industries America, Inc. Alkaline etching liquid for texturing a silicon wafer surface

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100227432A1 (en) * 2009-03-03 2010-09-09 Kashkoush Ismail I Method for selective under-etching of porous silicon
US20110070744A1 (en) * 2009-09-18 2011-03-24 Zhi-Wen Sun Silicon Texturing Formulations for Solar Applications
WO2011056948A2 (en) * 2009-11-05 2011-05-12 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
EP2372779A2 (en) * 2010-04-01 2011-10-05 SolarWorld Industries America, Inc. Alkaline etching liquid for texturing a silicon wafer surface

Also Published As

Publication number Publication date
WO2013058477A2 (ko) 2013-04-25

Similar Documents

Publication Publication Date Title
WO2011155858A3 (en) Method of graphene manufacturing
WO2012002995A3 (en) Thin films and methods of making them using cyclohexasilane
WO2013087073A3 (de) Substrat mit einer strukturierten oberfläche sowie verfahren zu dessen herstellung sowie verfahren zur bestimmung der benetzungseigenschaften davon
WO2013019316A3 (en) A boron-containing buffer layer for growing gallium nitride on silicon
WO2012154498A3 (en) Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
NO20083569L (no) Fremgangsmate for a produsere silisiumtynnfilm pa en substratflate ved dampdeponering
WO2012021026A3 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (1)
GB2509660A (en) High selectivity nitride etch process
WO2010125081A3 (de) Bandgap tailoring von solarzellen aus flüssigsilan mittels germanium-zugabe
IN2014CN04702A (ko)
WO2012018264A3 (en) Systems, methods and compositions for the production of silicon nitride nanostructures
WO2010150279A3 (en) Process for synthesis of diarylpyrimidine non-nucleoside reverse transcriptase inhibitor
WO2012021025A3 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (2)
TW201130017A (en) Epitaxial substrate having nano-rugged surface and fabrication thereof
WO2014064263A3 (fr) Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
WO2013106008A3 (en) On-chip diffraction grating prepared by crystallographic wet-etch
WO2013058477A3 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2012144733A3 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
EP2701184A4 (en) COMPOUND GaN SUBSTRATE AND PRODUCTION METHOD THEREFOR, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
WO2010042379A3 (en) Method and apparatus for manufacturing thin-film photovoltaic devices
WO2012170302A3 (en) Method for providing high etch rate
WO2008043827A3 (de) Verfahren zur passivierung von solarzellen
MY170163A (en) Solar cell production method, and solar cell produced by same production method
WO2010006798A3 (de) Solarzellenchips mit neuer geometrie und verfahren zu deren herstellung
WO2011052987A3 (ko) 식각액 조성물

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12841985

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2014535640

Country of ref document: JP

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 12841985

Country of ref document: EP

Kind code of ref document: A2