WO2013054782A1

WO2013054782A1 - Resistance measuring device, connection resistance measuring method

Info

Publication number: WO2013054782A1
Application number: PCT/JP2012/076078
Authority: WO
Inventors: 誠玉木
Original assignee: シャープ株式会社
Priority date: 2011-10-12
Filing date: 2012-10-09
Publication date: 2013-04-18

Abstract

In this resistance measuring device (31), a first electrode (33) and a second electrode (35) are arranged relative to a target gate line (Lg) so as to form the same capacity, and the voltages (V1, V2) of one electrode (37a) of a third capacitor (37) connected to the first electrode (33) and of one electrode (39a) of a fourth capacitor (39) connected to the second electrode (35), and also the rates of change over time (D1, D2) of said voltages (V1, V2), are calculated. The CPU (43) can then use the calculated voltages (V1, V2) and rates of change over time (D1, D2) thereof to calculate the current (Im) flowing through the gate line (Lg), and can measure the connection resistance (R).

Description

Resistance measuring device, connection resistance measuring method

The present invention relates to a technique for measuring the resistance of a connection portion when an electronic component is connected to a connection wiring.

Conventionally, there is a desire to measure the resistance of a connection portion when an electronic component is connected to a connection wiring. For example, when a signal having a predetermined voltage is output from the electronic component to the connection wiring, the voltage output from the electronic component, the voltage input to the connection wiring, and the current flowing through the connection wiring It is possible to measure the resistance of the connection part by measuring. The voltage output from the electronic component can be measured using a probe or the like. Further, a technique for measuring the voltage of the core wire of the coated cable from the outside of the insulating coating is known (for example, Patent Document 1), and the voltage input to the connection wiring can be measured in a non-contact manner using this. Is possible.

JP 2000-65868 A

(Problems to be solved by the invention)
However, it may be difficult to measure the current flowing through the connection wiring. By directly contacting the current measurement terminal with the connection wiring, it is possible to measure the current flowing through the connection wiring. However, in the field of circuit boards, liquid crystal panels, and the like, when the current measurement terminal is brought into direct contact with the connection wiring, it is necessary to expose the conduction portion of the connection wiring, which increases the damage factor of the wiring portion. Further, since the miniaturization of the connection wiring is progressing due to the demand for miniaturization, it is difficult to align the contact measurement. A technique that can measure the resistance of a connection portion in a non-destructive manner is desired.

This invention is made in view of such a condition, and it aims at providing the technique which can measure the connection resistance between the connection wiring connected to the electronic component, and the said electronic component nondestructively. .

(Means for solving the problem)
In order to solve the above problems, a resistance measuring device of the present invention is a resistance measuring device for measuring a connection resistance between a connection wiring connected to an electronic component and the electronic component, and between the connection wiring A first electrode that forms a first capacitor having a first capacity, a second electrode that forms a second capacitor having a second capacity between the connection wirings, and one electrode having a known third capacity. Has a fourth capacitor that is known and is different from the third capacitor, one electrode is connected to the second electrode, and the other electrode is the third capacitor connected to the first electrode. A fourth capacitor connected to the other electrode of the capacitor; a first measuring unit for measuring a first voltage, which is a voltage of the one electrode of the third capacitor, at a specified time; the first voltage and the reference Calculating a time change rate of the first voltage from the time; A calculating unit; a second measuring unit that measures a second voltage that is a voltage of the one electrode of the second capacitor at each specified time; and a time change of the second voltage from the second voltage and the reference time. A second calculation unit that calculates a rate; and a measurement unit that measures the connection resistance, wherein the first capacitor and the second capacitor are set to the same capacitance, and the calculation unit outputs an output of the electronic component The connection resistance is measured using the voltage, the voltage of the other electrode of the third capacitor, the first voltage and its time change rate, and the second voltage and its time change rate.

In this resistance measuring apparatus, the current flowing through the composite capacitor constituted by the first capacitor and the second capacitor is used to change the amount of charge accumulated in the composite capacitor, that is, the time change rate of the first voltage and the time of the second voltage. It can be determined using the rate of change. According to this resistance measuring apparatus, the current flowing through the connection wiring can be obtained without directly contacting the connection wiring, and the connection resistance between the connection wiring connected to the electronic component and the electronic component is nondestructive. Can be measured.

In the resistance measuring apparatus, the connection wiring is covered with an insulating film, and the first electrode and the second electrode form the first capacitor and the second capacitor in a non-contact state with the insulating film. It is good also as a structure. According to this resistance measuring device, when measuring the connection resistance, not only is not connected to the connection wiring, it is not necessary to contact the insulating film covering the connection wiring, so that the connection wiring is reliably prevented from being destroyed. can do.

In the resistance measurement device, the connection wiring may be provided on a display panel, and the output voltage of the electronic component may be a display panel driving voltage for driving the display panel. According to this resistance measuring apparatus, the yield of the display panel can be improved by measuring the connection resistance between the connection wiring and the electronic component and changing the drive voltage.

In the resistance measuring apparatus, the display panel may be a liquid crystal panel, and the electronic component may be a liquid crystal driving integrated circuit that drives the liquid crystal panel. In other words, it may be built in an IC circuit that drives the liquid crystal panel. According to this resistance measuring apparatus, the yield of the liquid crystal panel can be improved.

In the resistance measuring apparatus, the measurement unit may calculate the connection resistance over a plurality of times and use the connection resistance as an average connection resistance measured by averaging the calculated connection resistances.

The present invention is also embodied in a connection resistance measuring method realized by using the above resistance measuring apparatus. The connection resistance measuring method of the present invention is a method for measuring a connection resistance between a connection wiring connected to an electronic component and the electronic component, and a capacitor having the same capacity is formed between the connection wiring and the connection wiring. An arrangement step of arranging the first electrode and the second electrode, and the other electrode of the third capacitor having a known third capacitance and one electrode connected to the first electrode, A connecting step of connecting the other electrode of the fourth capacitor having a fourth capacitor different from the third capacitor and having one electrode connected to the second electrode; and the disposing step and the connecting step end A measuring step of measuring a first voltage, which is a voltage of the one electrode of the third capacitor, and a second voltage, which is a voltage of the one electrode of the fourth capacitor, at the same specified time later; From the first voltage and the specified time A first calculation step of calculating a time change rate of the first voltage, a second calculation step of calculating a time change rate of the second voltage from the second voltage and the specified time, and an output voltage of the electronic component, And measuring the connection resistance using the voltage of the other electrode of the third capacitor, the first voltage and its time rate of change, and the second voltage and its time rate of change. .

According to this connection resistance measurement method, the current flowing through the connection wiring can be measured without directly contacting the connection wiring, and the connection resistance between the connection wiring connected to the electronic component and the electronic component is measured. Can be measured non-destructively.

In the connection resistance measurement method, the first voltage and the second voltage may be measured at the same timing in the measurement step. According to this connection resistance measurement method, the connection resistance between the connection wiring and the electronic component can be accurately measured using the first voltage and the second voltage measured at the same timing and their time rate of change. Can do.

In the connection resistance measuring method, the voltage in the transient state of the third capacitor and the fourth capacitor may be measured in the measuring step. According to this connection resistance measurement method, by measuring the voltage in the transient state of the third capacitor and the fourth capacitor, it is possible to measure a change in the current flowing through the connection wiring, between the connection wiring and the electronic component. Can be measured.

(The invention's effect)
ADVANTAGE OF THE INVENTION According to this invention, the connection resistance between the connection wiring connected to the electronic component and the said electronic component can be measured nondestructively.

It is a figure which shows the schematic structure of a liquid crystal panel. It is a figure which shows the cross section of a liquid crystal panel. It is a figure which shows schematic structure of a resistance measuring apparatus. It is a figure which shows the flowchart of a measurement process. It is a graph which shows the transient state of input voltage. It is a figure which shows the cross section of a liquid crystal panel.

<Embodiment>
An embodiment of the present invention will be described with reference to the drawings.
1. Configuration of Liquid Crystal Panel FIG. 1 shows a liquid crystal panel (an example of a display panel) 10 according to this embodiment. The liquid crystal panel 10 is mounted on, for example, a mobile phone, a PDA, a smartphone, or a tablet-type multifunction mobile terminal device. As shown in FIG. 1, the liquid crystal panel 10 includes a first glass substrate 11, a second glass substrate 12, and a liquid crystal driving IC (an example of an electronic component, hereinafter referred to as IC) 16.

The liquid crystal panel 10 is, for example, a TFT (Thin Film Transistor) color liquid crystal panel, and a liquid crystal display unit 17 including a plurality of pixels P is formed in a region where the first glass substrate 11 and the second glass substrate 12 overlap each other. Has been. As shown in FIG. 1, each pixel P includes a TFT and a liquid crystal cell LC. In each pixel P, the on / off state of the TFT is switched based on the liquid crystal driving signal input from the liquid crystal driving IC 16 via the gate line Lg and the source line Ls, and the voltage applied to the liquid crystal cell LC changes. .

In the liquid crystal panel 10, by controlling the voltage applied to the liquid crystal cell LC of each pixel P, the transmittance of the liquid crystal cell LC changes. In the liquid crystal panel 10, a change in transmittance of each liquid crystal cell LC, light incident from a backlight device (not shown) disposed behind the liquid crystal panel 10, and a color filter provided on the second glass substrate 12 are provided. In this way, a predetermined color image is displayed on the liquid crystal display unit 17.

Further, on the first glass substrate 11, a plurality of input wirings 13 made of, for example, ITO, a plurality of gate lines Lg, and a plurality of source lines Ls are formed according to the number of pixels P included in the liquid crystal display unit 17. Yes. The input wiring 13, the gate line Lg, and the source line Ls are examples of connection wiring.

At one end of each input wiring 13, an FPC pad 13a for connection to an FPC (flexible substrate) 21 (see FIG. 2) is formed. At the other end of each input wiring 13, an IC pad portion 13 b for connecting to the input side pump Bin of the IC 16 is formed.

At one end of each gate line Lg and each source line Ls, an IC pad portion 15 for connecting to the output side pump pair Bout of the IC 16 is formed. Each gate line Lg and each source line Ls are provided up to the liquid crystal display unit 17, the gate line Lg is connected to the gate G of the TFT of each pixel P, and the source line Ls is the TFT of each pixel P. Connected to the source S.

As shown in FIG. 2, the surface of the input wiring 13 and the gate line Lg (source line Ls) is covered with an insulating film 18, and the FPC pad is formed by one end of the input wiring 13 that is not covered with the insulating film 18. 13a is formed. Similarly, the IC pad portion 13b is formed by the other end not covered by the insulating film 18 of the input wiring 13, and the IC pad portion is formed by the one end not covered by the insulating film 18 of the gate line Lg (source line Ls). 15 is formed. As shown in FIG. 2, the FPC pad 13 a is electrically connected to the FPC 21 by the anisotropic conductive material 19, and the

IC pad portions

13 b and 15 are electrically connected to the IC 16 by the anisotropic conductive material 19. Has been.

2. Driving the liquid crystal panel In the liquid crystal panel 10, various signals input from the outside via the FPC 21 are input to the IC 16, and a liquid crystal driving voltage (display panel driving voltage) for driving each pixel P of the liquid crystal display unit 17 by the IC 16. Example) A liquid crystal driving signal having Vin is generated. Then, the drive signal generated by the IC 16 is input to the gate line Lg (source line Ls) via the connection portion between the IC 16 and the IC pad unit 15 and is applied to each pixel P of the liquid crystal display unit 17 as described above. Entered.

The IC 16 and the IC pad 15 are electrically connected by thermocompression bonding via an anisotropic conductive material 19. In the pressure bonding with the anisotropic conductive material 19, the resistance value may increase due to a change in the pressure bonding conditions and the like, and the connection resistance R between the IC 16 and the IC pad portion 15 may increase. . When the connection resistance R between the IC 16 and the IC pad unit 15 increases, the liquid crystal drive voltage of the liquid crystal drive signal input to the gate line Lg (source line Ls) decreases, and the liquid crystal display unit 17 is suitable for the liquid crystal display unit 17. A color image cannot be displayed. Therefore, it is necessary to measure the connection resistance R between the IC 16 and the IC pad portion 15.

To measure the connection resistance R, it is necessary to measure the output voltage of the IC 16, the input voltage of the IC pad section 15, and the current flowing through the gate line Lg (source line Ls). However, normally, the connection portion with the IC pad portion 15 is covered with an anisotropic conductive material 19, and a probe or the like is directly brought into contact with the IC pad portion 15 to input voltage to the IC pad portion 15. And it is difficult to measure current. Further, the gate line Lg (source line Ls) continuous to the IC pad portion 15 is covered with an insulating film 18, and the input voltage and current of the IC pad portion 15 are measured by directly contacting a probe or the like. Difficult to do. In the resistance measuring device 31 of the present embodiment described below, the current flowing through the gate line Lg (source line Ls) is measured without directly contacting the IC pad unit 15 and the gate line Lg (source line Ls). .

3. Configuration of Resistance Measuring Device FIG. 3 shows a resistance measuring device 31 of this embodiment. As shown in FIG. 3, the resistance measurement device 31 includes a first electrode 33, a second electrode 35, a third capacitor 37, and a fourth capacitor 39. The first electrode 33 is connected to one electrode 37 a of the third capacitor 37. The second electrode 35 is connected to one electrode 39 a of the fourth capacitor 39. The third capacitor 37 has a known capacitance Cop3, and the other electrode 37b is connected to the ground voltage (an example of a reference voltage). The fourth capacitor 39 has a known capacitance Cop 4 different from the capacitance Cop 3, and the other electrode 39 b is connected to the other electrode 37 b of the third capacitor 37. Therefore, the other electrode 39b of the fourth capacitor 39 is also connected to the ground voltage.

Furthermore, the resistance measurement device 31 includes a voltmeter (an example of a first measurement unit and a second measurement unit) 41 and a CPU (an example of a first calculation unit, a second calculation unit, and a measurement unit) 43. The voltmeter 41 is connected to the CPU 43 and measures the first voltage V1 of one electrode 37a of the third capacitor 37 and the second voltage V2 of one electrode 39a of the fourth capacitor 39. The voltmeter 41 measures these voltages at the same timing and every specified time ΔT, and stores the measured voltages V1 and V2 in the memory 45 of the CPU 43. In the present embodiment, the specified time ΔT for measuring the voltage by the voltmeter 41 is set to about several picoseconds corresponding to a period of several terahertz.

The CPU 43 has a built-in memory 45, and calculates a time change rate D1 of the first voltage V1 from the first voltage V1 stored in the memory 45 and a specified time ΔT set in the voltmeter 41. As shown in FIG. 5, the CPU 43 obtains a first differential voltage ΔV1, which is a differential voltage, from the first voltage V1 continuously stored in the memory 45, and divides this by a specified time ΔT to change the rate of time change. D1 is calculated. Similarly, the CPU 43 calculates the time change rate D2 of the second voltage V2.
D1 = ΔV1 / ΔT, D2 = ΔV2 / ΔT

The CPU 43 further uses the liquid crystal driving voltage Vin, the first voltage V1, the second voltage V2, the first differential voltage ΔV1, and the second differential voltage ΔV2 measured by using the IC 16 to connect resistance R. Measure.

4). Measurement Process Next, the measurement process of the connection resistance R will be described with reference to FIG. 4 or FIG. FIG. 4 shows a flowchart of the measurement process. In the present embodiment, description is given using an example in which the connection resistance R between the IC 16 and the gate line Lg is measured. However, the connection resistance R between the IC 16 and the source line Ls can be measured in the same manner. Further, the connection resistance R between the FPC 21 and the input wiring 13 can be similarly measured.

When the measurement process is started, as shown in FIG. 2, the resistance measuring device 31 is arranged close to the target gate line Lg (S2). The first electrode 33 of the resistance measuring device 31 is disposed to face the gate line Lg, and forms a first capacitor C1 having a capacitance Cs with the gate line Lg. The second electrode 35 of the resistance measuring device 31 is disposed to face the gate line Lg, and forms a second capacitor C2 having a capacitance Cs with the gate line Lg. That is, the resistance measuring device 31 is arranged so that the capacities of the first capacitor C1 and the second capacitor C2 are equal.

At this time, the resistance measuring device 31 is arranged in a non-contact state with respect to the liquid crystal panel 10 in order to prevent the insulating film 18 from being damaged by the resistance measuring device 31 and the gate line Lg from being disconnected.

When the resistance measuring device 31 is arranged close to the target gate line Lg, the voltmeter 41 measures the first voltage V1 and the second voltage V2 (S4), and the CPU 43 calculates the time change rates D1 and D2. Calculate (S6, S8). As shown in FIG. 5, the voltmeter 41 measures the voltages V1 and V2 in a transient state such as when the liquid crystal drive voltage Vin is switched (changed from zero to Vin in FIG. 5). The change rates D1 and D2 are calculated. Here, the “transient state” means a state in which the voltage applied to the third capacitor 37 and the fourth capacitor 39 is not stable and a charge / discharge current flows through the third capacitor 37 and the fourth capacitor 39. To do.

Next, the CPU 43 measures the connection resistance R.
(Calculation formula for connection resistance)
The combined capacitance Cm of the first capacitor C1 to the fourth capacitor 39 is expressed as follows from the capacitance of each capacitor.
Cm = Cs * Cop3 / (Cs + Cop3) + Cs * Cop4 / (Cs + Cop4)

Further, the input voltage Vm stepped down by the first capacitor (second capacitor) Cs and the connection resistor R and inputted to the gate line Lg is as follows from the capacitance of each capacitor and the first voltage V1 and the second voltage V2. It is expressed in
Cs = (Cop3 × V1−Cop4 × V2) / (V2−V1)
Vm = {1 + Cop3 × (V2−V1) / (Cop3 × V1−Cop4 × V2)} × V1

When the current flowing through the gate line Lg is Im, the connection resistance R is expressed as follows from Ohm's law.
R = (Vin−Vm) / Im
In addition, since the current Im flowing through the gate line Lg in the transient state is equal to the charge / discharge current flowing through the first capacitor C1 to the fourth capacitor 39, the current Im is a time change rate dVm / of the combined capacitance Cm and the input voltage Vm. It can be expressed as follows using dT.
Im = Cm × dVm / dT

That is, the connection resistance R is expressed as follows.
R = (Vin−Vm) / (Cm × dVm / dT)
The time change rate dVm / dT can be calculated using the input voltage Vm and the time change rates D1 and D2. That is, the connection resistance R is calculated using the known capacitances Cop3 and Cop4, the measured voltages V1 and V2, and the calculated time change rates D1 and D2.

The CPU 43 calculates the connection resistance R every specified time ΔT, and uses the average connection resistance R obtained by averaging the calculated connection resistances R as the connection resistance R between the IC 16 and the target gate line Lg (S10). ).

5. Advantages of the Present Invention (1) In the resistance measuring device 31 of the present embodiment, the current flowing in the target gate line Lg from the transient current Im flowing in the composite capacitor constituted by the first capacitor C1 to the fourth capacitor 39. Im is obtained, and the transient state current Im flowing in the composite capacitor uses the change in the amount of charge accumulated in the composite capacitor, that is, the time change rate D1 of the first voltage V1 and the time change rate D2 of the second voltage V2. Can be obtained. According to the resistance measuring device 31, the current Im flowing in the target gate line Lg can be obtained without being directly connected to the gate line Lg, and the connection resistance R between the IC 16 and the target gate line Lg. Can be measured non-destructively.

(2) In the resistance measurement device 31 of the present embodiment, if a capacitor having the same capacity can be formed using the first electrode 33 and the second electrode 35, the resistance measurement device 31 is not brought into contact with the liquid crystal panel 10. The connection resistance R can be measured. Since the gate line Lg and the like provided in the liquid crystal panel 10 are formed as a thin film, the gate line Lg and the like are damaged when the resistance measuring device 31 and the liquid crystal panel 10 come into contact with each other even through the insulating film 18. Sometimes. According to this resistance measuring device 31, since the connection resistance R can be measured without bringing the resistance measuring device 31 into contact with the liquid crystal panel 10, it is possible to reliably prevent the gate line Lg and the like from being destroyed. .

(3) In the resistance measuring device 31 of the present embodiment, the specified time ΔT is set to about several picoseconds corresponding to a period of several terahertz. In the liquid crystal panel 10, as the product on which the liquid crystal panel 10 is mounted is downsized, the area other than the liquid crystal display unit 17 is required to be downsized, and the line width of the input wiring 13 and the gate line Lg (source line Ls). However, narrowing is required. Therefore, the capacitance Cs of the first capacitor C1 (second capacitor C2) formed by the target gate line Lg and the first electrode 33 (second electrode 35) is set to about several pF (picofarad). Accordingly, the capacity stored in the first capacitor C1 (second capacitor C2) is also small, and the period of the transient state is also shortened. In the resistance measuring device 31, the specified time ΔT is set to be as short as several picoseconds. Therefore, the time change rates D1 and D2 of the voltages V1 and V2 in the transient state of the liquid crystal panel 10 are obtained using the resistance measuring device 31. The connection resistance R can be measured.

<Other embodiments>
The present invention is not limited to the embodiments described with reference to the above description and drawings. For example, the following embodiments are also included in the technical scope of the present invention.

(1) In the above embodiment, when measuring the connection resistance R, a plurality of connection resistances R are calculated, and the average value of these connection resistances R is the measured connection resistance R. There is no need to calculate. The connection resistance R calculated after a preset reference time from the switching of the liquid crystal drive voltage Vin may be used as the measured connection resistance R.

(2) In the above-described embodiment, an example in which the IC 16 is used as an electronic component has been described. However, the present invention is not limited to this. Any electronic component that outputs a signal having a predetermined voltage is not particularly limited. Further, the display panel provided with the target connection wiring is not limited. In the above embodiment, the liquid crystal panel is exemplified, but the present invention can also be applied to other types of display panels, for example, EL panels.

(3) Furthermore, the display panel may not be provided with the target connection wiring. For example, the present invention can be applied to wiring provided on a printed circuit board or a solar panel. In this case, the specified time ΔT can be freely set according to the line width of the target connection wiring.

(4) In the above embodiment, the resistance measurement device 31 has been described using the example in which the other electrode 37b of the third capacitor 37 is connected to the ground voltage. It may be connected to. Further, it may be connected to a fluctuating voltage such as a pulse voltage. When the pulse period is set longer than the specified time ΔT, it can be regarded as a constant voltage at the time of measurement.

(5) In the above-described embodiment, the resistance measuring device 31 is arranged on the insulating film 18 side of the target gate line Lg, and the connection resistance R is measured. As described above, the connection resistance R may be measured by arranging it on the first glass substrate 11 side.

10: liquid crystal panel, 15: pad portion for IC, 31: resistance measuring device, 33: first electrode, 35: second electrode, 37: third capacitor, 39: fourth capacitor, 41: voltmeter, 43: CPU , V1: first voltage, D1: time change rate of the first voltage, V2: second voltage, D2: time change rate of the second voltage, Im: current, Lg: gate line, Ls: source line, R: connection Resistance, Vin: Liquid crystal drive voltage, Vm: Input voltage, ΔT: Specified time

Claims

A resistance measuring device for measuring a connection resistance between a connection wiring connected to an electronic component and the electronic component,
A first electrode forming a first capacitor having a first capacitance with the connection wiring;
A second electrode forming a second capacitor having a second capacitance with the connection wiring;
A third capacitor having a known third capacitance, one electrode connected to the first electrode;
A fourth capacitor that is known and has a fourth capacitance different from the third capacitance, one electrode connected to the second electrode, and the other electrode connected to the other electrode of the third capacitor;
A first measuring unit that measures a first voltage, which is a voltage of the one electrode of the third capacitor, every specified time;
A first calculator that calculates a time change rate of the first voltage from the first voltage and the reference time;
A second measuring unit that measures a second voltage, which is a voltage of the one electrode of the fourth capacitor, at each specified time;
A second calculator for calculating a time change rate of the second voltage from the second voltage and the reference time;
A measurement unit for measuring the connection resistance;
With
The first capacity and the second capacity are set to the same capacity,
The calculation unit uses the output voltage of the electronic component, the voltage of the other electrode of the third capacitor, the first voltage and its time change rate, and the second voltage and its time change rate. A resistance measuring device for measuring the connection resistance.
The connection wiring is covered with an insulating film, and the first electrode and the second electrode form the first capacitor and the second capacitor in a non-contact state with the insulating film. Item 2. The resistance measuring device according to Item 1.
The connection wiring is provided on a display panel,
The resistance measurement apparatus according to claim 1, wherein the output voltage of the electronic component is a display panel drive voltage for driving the display panel.
The display panel is a liquid crystal panel,
The resistance measuring apparatus according to claim 3, wherein the electronic component is a liquid crystal driving integrated circuit that drives the liquid crystal panel.
5. The measurement unit according to claim 1, wherein the measurement unit calculates the connection resistance over a plurality of times, and sets the average connection resistance obtained by averaging the calculated connection resistances as the connection resistance. The resistance measuring device according to any one of the above.
A method for measuring a connection resistance between a connection wiring connected to an electronic component and the electronic component,
An arrangement step of arranging the first electrode and the second electrode so as to form a capacitor having the same capacitance with the connection wiring;
One electrode having a known third capacitance, one electrode having a fourth capacitance that is known and different from the third capacitance, and the other electrode of the third capacitor connected to the first electrode; Connecting the other electrode of the fourth capacitor connected to the second electrode,
After the arrangement step and the connection step, the first voltage that is the voltage of the one electrode of the third capacitor and the second voltage that is the voltage of the one electrode of the fourth capacitor are the same. A measurement process to measure every hour;
A first calculation step of calculating a time change rate of the first voltage from the first voltage and the specified time;
A second calculation step of calculating a time change rate of the second voltage from the second voltage and the specified time;
The connection resistance is measured using the output voltage of the electronic component, the voltage of the other electrode of the third capacitor, the first voltage and its time change rate, and the second voltage and its time change rate. Measuring process to
Measuring method of connection resistance including
The connection resistance measuring method according to claim 6, wherein in the measuring step, the first voltage and the second voltage are measured at the same timing.
The connection resistance measuring method according to claim 6 or 7, wherein in the measuring step, a voltage in a transient state of the third capacitor and the fourth capacitor is measured.