WO2013047919A1 - Microscope électronique à balayage doté d'une fonction de détection d'électrons rétrodiffusés - Google Patents

Microscope électronique à balayage doté d'une fonction de détection d'électrons rétrodiffusés Download PDF

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Publication number
WO2013047919A1
WO2013047919A1 PCT/KR2011/007128 KR2011007128W WO2013047919A1 WO 2013047919 A1 WO2013047919 A1 WO 2013047919A1 KR 2011007128 W KR2011007128 W KR 2011007128W WO 2013047919 A1 WO2013047919 A1 WO 2013047919A1
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WO
WIPO (PCT)
Prior art keywords
electrons
electron
unit
sample
electron microscope
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Application number
PCT/KR2011/007128
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English (en)
Korean (ko)
Inventor
김석
안재형
김재호
Original Assignee
에스엔유프리시젼 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에스엔유프리시젼 주식회사 filed Critical 에스엔유프리시젼 주식회사
Priority to CN201180073721.XA priority Critical patent/CN103890895B/zh
Priority to JP2014533169A priority patent/JP5826941B2/ja
Publication of WO2013047919A1 publication Critical patent/WO2013047919A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24495—Signal processing, e.g. mixing of two or more signals

Definitions

  • the present invention relates to a scanning electron microscope having a reflection electron detection function, and more particularly, a reflection electron detection function capable of separating and detecting electrons emitted from a sample into secondary electrons and reflection electrons using a blank filter. It relates to a scanning electron microscope provided with.
  • the surface of a sample placed in a vacuum is scanned in a two-dimensional direction with a fine electron beam of about 1 to 100 nm to detect a signal of secondary electrons generated on the surface of the sample, and an enlarged image is displayed on the cathode ray and the screen or recorded to Scanning electron microscopes for analyzing morphological microstructures and the like are widely used.
  • FIG. 1 shows an example of a conventional scanning electron microscope.
  • the conventional scanning electron microscope 10 includes a light source 11 that scans primary electrons pe in a vacuum chamber, and an objective lens and a sample of secondary electrons se that are emitted from a sample. and a detector 12 for detecting secondary electrons se emitted from the surface of s).
  • an object of the present invention is to solve such a conventional problem, and to provide a scanning electron microscope having a reflection electron detection function capable of separating and detecting secondary electrons and reflection electrons using a blank filter. have.
  • a scanning electron microscope for detecting a primary electron (Primary Electron) generated from the light source to the sample, and the emission electrons emitted from the sample after the primary electron is incident in accordance with the present invention
  • a bin filter unit disposed between the light source and the sample to generate a magnetic field and an electric field, thereby separating the emission electrons into secondary electrons and reflected electrons; It is achieved by a scanning electron microscope with a reflected electron detection function comprising a; detecting unit for detecting the secondary electrons and the reflected electrons separated from the empty filter unit.
  • the detecting unit may include a first detection unit disposed above the empty filter unit to detect the secondary electrons; And a second detector disposed between the first detector and the light source to detect the reflected electrons.
  • the surface of the side end portion at which the secondary electrons are incident on the first detection unit or the side end surface at which the reflection electrons are incident to the second detection unit may be inclined.
  • the angle formed by the side end of the first detection unit to which the secondary electrons are incident to the ground may be greater than the angle formed by the side end at which the reflected electrons of the second detection unit is incident to the ground.
  • the detecting unit may be an electron attracting member disposed to be spaced apart from the end of the first detection unit or the second detection unit in order to attract the secondary electrons to the first detection unit side or to attract the reflected electrons to the second detection unit side. It may further include.
  • the detecting unit may further include an attracting member disposed on a movement path of the reflecting electrons to prevent the reflected electrons from being attracted to the first detection unit by the electron attracting member.
  • the light source, the bin filter unit and the detecting unit, the end side of the primary electrons emitted from the light source is emitted may further include a barrel is isolated in a vacuum state.
  • a scanning electron microscope having a reflected electron detection function capable of easily separating secondary electrons and reflected electrons emitted from a sample by a blank filter unit and detecting each of them is provided.
  • the secondary electrons and the reflected electrons can be easily separated using the empty filter unit without any additional configuration.
  • the surface characteristics and the internal characteristics of the sample can be grasped simultaneously.
  • the detecting unit for detecting the secondary electrons and the reflected electrons may be provided in the barrel so as to be able to be compact in overall.
  • the incidence rate of the electrons and the measurement accuracy of the sample characteristics can be improved.
  • FIG. 2 is a schematic cross-sectional view of a scanning electron microscope with a reflection electron detection function according to a first embodiment of the present invention
  • FIG. 3 illustrates the operation of primary electrons passing through the empty filter unit in the scanning electron microscope equipped with the reflection electron detection function of FIG.
  • FIG. 4 shows the trajectory of the emission electrons emitted from the sample in the scanning electron microscope equipped with the reflection electron detection function of FIG.
  • FIG. 5 illustrates the operation of the emission electrons passing through the empty filter unit in the scanning electron microscope equipped with the reflection electron detection function of FIG.
  • FIG. 6 is a schematic cross-sectional view of a scanning electron microscope with a reflection electron detection function according to a second embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view of a scanning electron microscope with a reflected electron detection function according to a first embodiment of the present invention.
  • the scanning electron microscope 100 having the reflection electron detection function includes a barrel 110, a light source 120, a focusing lens 130, and an aperture 140. ), The detecting unit 150, the empty filter unit 160, the objective lens 170, and the sample holder 180.
  • the barrel 110 is an exterior material for accommodating the light source 120, the focusing lens 130, the aperture 140, the detecting unit 150, the empty filter unit 160, and the objective lens 170, which will be described later.
  • an end on the side where the primary electron (pe) exits that is, an end on the side of the sample holder 180 where the sample S is provided, is maintained in a vacuum state.
  • the light source 120 is a member for scanning the primary electrons (pe) generated by heating the cathode in the barrel (110) toward the sample holder 180 on which the lower sample (S) is mounted.
  • the focusing lens 130 is a member for focusing primary electrons (pe) emitted from the light source 120 as described above.
  • the aperture 140 is a member for making the primary electron pe focused by passing through the focusing lens 130 to have a constant wavelength.
  • the detecting unit 150 emits electrons including secondary electrons (Se) and reflective electrons (Back Scattered Electrons: bse) emitted from the sample S after the primary electrons (pe) are incident. ) Is a member for detecting, and includes a first detector 151 and a second detector 152.
  • the first detection unit 151 is for detecting only secondary electrons (se) of the emission electrons (ee) emitted from the sample (S), between the light source 120 and the empty filter unit 160 to be described later Is placed. Since the secondary electrons se are laterally deflected to enter the first detection unit 151 while moving upward from the sample S, the cross section of the first detection unit 151 may allow the secondary battery to enter vertically. It is formed to be inclined.
  • the second detector 152 detects only the reflected electrons bee among the emission electrons ee emitted from the sample S, and is formed between the light source 120 and the first detector 151. 1 is provided above the detection unit 151.
  • the cross-sectional view of the second detection unit 152 can be inclined in the same manner as the first detection unit 151 described above, since the deflection degree of the reflected electrons (be) is smaller than the secondary electron (se), the second detection unit It is preferable that the inclination angle of the cross section is smaller than the cross section of the first detection unit 151.
  • the angle ⁇ 1 of the surface on which the secondary electron se of the first detector 151 is incident to the ground is formed by the surface on which the reflective electron be of the second detector 152 is incident to the ground. It is preferable to form larger than the angle (theta) 2 .
  • the empty filter unit 160 is provided between the first detection unit 151 and the sample holder 180, that is, the lower side of the first detection unit 151.
  • the movement path is a member for deflecting toward the detecting unit 150.
  • the empty filter unit 160 uses the secondary electrons se and the reflected electrons be included in the emission electrons ee emitted from the sample S, and thus the secondary filter se is different from each other. It physically separates electrons (se) and reflected electrons (be).
  • the empty filter unit 160 generates electric and magnetic fields that are perpendicular to each other on a plane perpendicular to the moving direction of the emission electrons ee emitted from the sample S, thereby generating secondary and se electrons. ) Will be deflected.
  • the objective lens 170 is a member that serves to adjust the focal point of the primary electron (pe) generated in the light source 120 and moved downward to the surface of the sample (S).
  • the sample holder 180 is a member disposed below the barrel to support the sample (S). On the other hand, the sample holder 180 is movable along the three axis direction, it can be controlled to facilitate the observation of the sample (S) through the rotation and inclination.
  • FIG. 3 illustrates the operation of the primary electrons passing through the empty filter unit in the scanning electron microscope with the reflection electron detection function of FIG. 2
  • FIG. 4 shows a sample in the scanning electron microscope with the reflection electron detection function of FIG. 2.
  • Figure 5 shows the movement trajectory of the emission electrons emitted from the device, and FIG. 5 shows the operation of the emission electrons passing through the empty filter unit in the scanning electron microscope equipped with the reflection electron detection function of FIG.
  • the primary electrons pe generated from the light source 120 in the barrel 110 are accelerated by applying a high voltage to the sample holder 180 on which the lower sample S is mounted. do.
  • the scanning direction of the primary electron (pe) is controlled by using a predetermined reflector (not shown) inside the barrel 110.
  • the empty filter unit 160 After the primary electron pe scanned from the light source 120 passes through the focusing lens 130 and the aperture 140, the primary electron pe reaches the empty filter unit 160. At this time, the empty filter unit 160 generates a magnetic field and an electric field along a direction perpendicular to each other on a predetermined plane parallel to the ground.
  • FIG. 3 (a) which illustrates the force applied to the primary electrons by the electric field generated from the empty filter unit 160
  • the primary electrons pe moving downwards may cause the empty filter unit 160 to move.
  • the electric field 20 generated from the empty filter unit 160 receives a force in the + x axis direction.
  • FIG. 3 (b) which illustrates the force applied to the primary electrons by the magnetic field 30 generated from the empty filter unit 160
  • the primary electrons pe are defined by the empty filter unit 160.
  • the force in the -x axis direction is applied by Fleming's left hand law.
  • the empty filter unit 160 is controlled such that the primary electron pe is equal to the absolute value of the force received by the electric field 20 and the force received by the magnetic field 30. Therefore, the force applied to the primary electrons pe by the magnetic field 30 of the empty filter unit 160 is applied to the force of the electric field 20 applied to the primary electrons pe by the electric field of the empty filter unit 160. Offset by, and move vertically downward (-z direction) without deflection on the xy plane.
  • primary electrons pe are incident on the surface of the sample S and react with the surface to emit secondary electrons se, and primary electrons pe are deeply incident from the surface of the sample S.
  • the reflected electron (be) is emitted, and after the primary electron (pe) is incident, x-ray or the like is emitted from the sample (S).
  • the secondary electrons se and the sample S emitted by reacting the emission electrons ee emitted from the sample S with the surface of the sample S after the primary electrons pe are incident. It will be described as including only the reflected electrons (be) that are incident and emitted relatively deep from the surface of the).
  • FIG. 5 (b) which illustrates the force exerted on the emission electron ee by the magnetic field 30 generated from the empty filter unit 160, the force generated in response to the magnetic field 30.
  • the force applied to the above-described primary electrons pe is formed in a direction opposite to each other, that is, in the + x axis direction.
  • the emission electron ee since the emission electron ee moves along the opposite direction to the primary electron pe, the emission electron ee receives the force generated by the reaction with the magnetic field 30 and the force applied by the electric field 20 simultaneously and deflects to one side. do.
  • the velocity of the reflected electron (be) included in the emission electron (ee) is greater than the speed of the secondary electron (se), but because it receives the same force, the movement trajectory of the secondary electron (se) of a relatively slow speed It is bent at an angle larger than the movement trace of the reflection electron be, and the movement trace of the reflection electron be of relatively high speed is bent at a small angle.
  • the emission electrons ee passing through the empty filter unit 160 due to the speed difference between the electrons are separated into secondary electrons se which are deflected at a relatively sharp angle and reflected electrons be deflected at a gentle angle.
  • the surface where the electrons of the front end portion of the first detection unit 151 and the second detection unit 152 is inclined to form a slope, so that the secondary electron (se) on the cross section of the first detection unit 151 and the second detection unit 152. ) And the reflected electrons (be) are incident vertically to improve the incident rate.
  • the surfaces where the secondary electrons se of the first detector 151 are incident and the surfaces where the reflected electrons bse of the second detector 152 are incident are formed at different angles so that the respective electrons are vertically incident.
  • the electron incident rate can be improved.
  • FIG. 6 is a schematic cross-sectional view of a scanning electron microscope with a reflection electron detection function according to a second embodiment of the present invention.
  • the scanning electron microscope 200 having the reflection electron detection function includes a barrel 110, a light source 120, a focusing lens 130, and an aperture 140. ), The detecting unit 250, the empty filter unit 160, the objective lens 170, and the sample holder 180.
  • the barrel 110, the light source 120, the focusing lens 130, the aperture 140, the empty filter unit 160, the objective lens 170, and the sample holder 180 of this embodiment are the same as those of the first embodiment described above. Duplicate explanation is omitted because it is the same as the configuration.
  • the detecting unit 250 includes a first detection unit 251, a second detection unit 252, an electromagnetic induction member 251a and 252a, and a attracting prevention member 253.
  • the first detector 251 is a member for selectively detecting only secondary electrons se.
  • an electron inducing member 251a forming a field is disposed at the end of the first detection unit 251 to attract the empty filter unit 160 to move the secondary electrons toward the first detection unit 251.
  • the second detector 252 is a member for selectively detecting only the reflected electrons bse.
  • An electron inducing member 252a forming a field is disposed at an end of the second detector 252 to attract the reflected electrons bse passing through the empty filter unit 160 to the second detector 252.
  • the attraction member 253 is for preventing the reflected electrons bse passing through the empty filter unit 160 from being moved toward the first detection unit 251 by the electron induction member 251a of the first detection unit 251.
  • the penetrating portion is formed on the path of the reflecting electron bse and maintained in a grounded state, thereby preventing the reflecting electron bse from being drawn toward the first detection part 251.
  • a scanning electron microscope is provided with a reflection electron detection function capable of separating the emitted electrons emitted from the sample into secondary electrons and reflected electrons by using an empty filter, and detecting them.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Tubes For Measurement (AREA)

Abstract

La présente invention concerne un microscope à balayage électronique doté d'une fonction de détection d'électrons rétrodiffusés, qui amène des électrons primaires issus d'une source de lumière à entrer dans un échantillon, et après l'entrée desdits électrons dans l'échantillon, qui détecte les électrons émis par l'échantillon. Le microscope à électronique à balayage doté d'une fonction de détection d'électrons rétrodiffusés est caractérisé en ce qu'il comprend : une unité de filtre de Wien qui est disposé entre la source de lumière et l'échantillon, et qui sépare les électrons émis en électrons secondaires et en électrons rétrodiffusés par la génération d'un champ magnétique et d'un champ électrique ; et une unité de détection qui détecte les électrons secondaires et les électrons rétrodiffusés séparés par l'unité de filtre de Wien. Ainsi, un microscope électronique à balayage doté d'une fonction de détection par rétrodiffusion d'électrons permet la séparation et la détection d'électrons secondaires et d'électrons rétrodiffusés grâce à l'utilisation d'un filtre de Wien.
PCT/KR2011/007128 2011-09-27 2011-09-28 Microscope électronique à balayage doté d'une fonction de détection d'électrons rétrodiffusés WO2013047919A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201180073721.XA CN103890895B (zh) 2011-09-27 2011-09-28 具备反射电子检测功能的扫描电子显微镜
JP2014533169A JP5826941B2 (ja) 2011-09-27 2011-09-28 反射電子検出機能を備えた走査電子顕微鏡

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20110097827 2011-09-27
KR10-2011-0097827 2011-09-27

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WO2013047919A1 true WO2013047919A1 (fr) 2013-04-04

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JP (1) JP5826941B2 (fr)
CN (1) CN103890895B (fr)
TW (1) TWI440064B (fr)
WO (1) WO2013047919A1 (fr)

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CN103277845B (zh) * 2013-04-27 2015-07-15 林智勇 Pm2.5冷暖过滤窗装置
CN104091745B (zh) * 2014-07-18 2016-06-01 镇江乐华电子科技有限公司 一种集成tem荧光屏和stem探测器的一体化结构
TWI594288B (zh) * 2016-03-14 2017-08-01 台灣電鏡儀器股份有限公司 電子顯微鏡
CN114220725B (zh) * 2020-12-02 2024-05-07 聚束科技（北京）有限公司 一种电子显微镜

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05258703A (ja) * 1991-05-30 1993-10-08 Nippon K L Ee Kk 電子ビーム検査方法とそのシステム
JPH1092355A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 荷電粒子顕微鏡
KR100382026B1 (ko) * 1993-12-28 2003-06-18 가부시끼가이샤 히다치 세이사꾸쇼 주사형전자현미경

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Publication number Priority date Publication date Assignee Title
JP4943733B2 (ja) * 2005-04-28 2012-05-30 株式会社日立ハイテクノロジーズ 荷電粒子ビームを用いた検査方法及び検査装置
JP2008010269A (ja) * 2006-06-28 2008-01-17 Horon:Kk 低真空電子光学系画像生成装置および低真空電子光学系画像生成方法
JP2009265058A (ja) * 2008-04-30 2009-11-12 Shimadzu Corp Ｔｆｔアレイ検査装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05258703A (ja) * 1991-05-30 1993-10-08 Nippon K L Ee Kk 電子ビーム検査方法とそのシステム
KR100382026B1 (ko) * 1993-12-28 2003-06-18 가부시끼가이샤 히다치 세이사꾸쇼 주사형전자현미경
JPH1092355A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 荷電粒子顕微鏡

Also Published As

Publication number Publication date
TW201314733A (zh) 2013-04-01
CN103890895B (zh) 2016-05-18
JP5826941B2 (ja) 2015-12-02
JP2014528153A (ja) 2014-10-23
CN103890895A (zh) 2014-06-25
TWI440064B (zh) 2014-06-01

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