WO2013043957A3 - Method and apparatus of minimizing extrinsic parasitic resistance in 60ghz power amplifier circuits - Google Patents

Method and apparatus of minimizing extrinsic parasitic resistance in 60ghz power amplifier circuits Download PDF

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Publication number
WO2013043957A3
WO2013043957A3 PCT/US2012/056466 US2012056466W WO2013043957A3 WO 2013043957 A3 WO2013043957 A3 WO 2013043957A3 US 2012056466 W US2012056466 W US 2012056466W WO 2013043957 A3 WO2013043957 A3 WO 2013043957A3
Authority
WO
WIPO (PCT)
Prior art keywords
minimizing
60ghz
power amplifier
amplifier circuits
parasitic resistance
Prior art date
Application number
PCT/US2012/056466
Other languages
French (fr)
Other versions
WO2013043957A2 (en
Inventor
Zaw Soe
Original Assignee
Tensorcom, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/243,880 external-priority patent/US8487695B2/en
Priority claimed from US13/243,908 external-priority patent/US8680899B2/en
Priority claimed from US13/243,986 external-priority patent/US8406710B1/en
Application filed by Tensorcom, Inc. filed Critical Tensorcom, Inc.
Publication of WO2013043957A2 publication Critical patent/WO2013043957A2/en
Publication of WO2013043957A3 publication Critical patent/WO2013043957A3/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/50Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
    • H03F3/505Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/04Frequency selective two-port networks
    • H03H11/12Frequency selective two-port networks using amplifiers with feedback
    • H03H11/126Frequency selective two-port networks using amplifiers with feedback using a single operational amplifier
    • H03H11/1286Sallen-Key biquad
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45138Two or more differential amplifiers in IC-block form are combined, e.g. measuring amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45394Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/04Frequency selective two-port networks
    • H03H11/12Frequency selective two-port networks using amplifiers with feedback
    • H03H11/1213Frequency selective two-port networks using amplifiers with feedback using transistor amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Synchronisation In Digital Transmission Systems (AREA)
  • Networks Using Active Elements (AREA)
  • Microwave Amplifiers (AREA)

Abstract

Very high frequency circuits suffer from parasitic resistances. At 60 GHz, conventional layout techniques can introduce loss into the circuit at critical locations. One critical interconnect between the output of a pre-driver and the gate of the final output stage causes 1 or 2 dB of loss due to the layout. By minimizing the number of via contacts, this conventional loss can be recovered using this new layout technique. In addition, a tap point of a via stack is used to modify the resonant characteristics of the interconnect. Finally, cross coupled devices in a resonant circuit are used to reduce the common mode noise at the expense of the common mode gain.
PCT/US2012/056466 2011-09-23 2012-09-21 Method and apparatus of minimizing extrinsic parasitic resistance in 60ghz power amplifier circuits WO2013043957A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US13/243,880 US8487695B2 (en) 2011-09-23 2011-09-23 Differential source follower having 6dB gain with applications to WiGig baseband filters
US13/243,880 2011-09-23
US13/243,908 US8680899B2 (en) 2011-09-23 2011-09-23 High performance divider using feed forward, clock amplification and series peaking inductors
US13/243,986 2011-09-23
US13/243,986 US8406710B1 (en) 2011-09-23 2011-09-23 Method and apparatus of minimizing extrinsic parasitic resistance in 60 GHz power amplifier circuits
US13/243,908 2011-09-23

Publications (2)

Publication Number Publication Date
WO2013043957A2 WO2013043957A2 (en) 2013-03-28
WO2013043957A3 true WO2013043957A3 (en) 2014-05-08

Family

ID=47914878

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2012/056463 WO2013043954A2 (en) 2011-09-23 2012-09-21 A high performance divider using feed forward, clock amplification and series peaking inductors
PCT/US2012/056458 WO2013043950A1 (en) 2011-09-23 2012-09-21 A DIFFERENTIAL SOURCE FOLLOWER HAVING 6dB GAIN WITH APPLICATIONS TO WiGig BASEBAND FILTERS
PCT/US2012/056466 WO2013043957A2 (en) 2011-09-23 2012-09-21 Method and apparatus of minimizing extrinsic parasitic resistance in 60ghz power amplifier circuits

Family Applications Before (2)

Application Number Title Priority Date Filing Date
PCT/US2012/056463 WO2013043954A2 (en) 2011-09-23 2012-09-21 A high performance divider using feed forward, clock amplification and series peaking inductors
PCT/US2012/056458 WO2013043950A1 (en) 2011-09-23 2012-09-21 A DIFFERENTIAL SOURCE FOLLOWER HAVING 6dB GAIN WITH APPLICATIONS TO WiGig BASEBAND FILTERS

Country Status (3)

Country Link
CN (1) CN104054267A (en)
DE (1) DE112012003966B4 (en)
WO (3) WO2013043954A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103939068A (en) * 2014-04-16 2014-07-23 东北石油大学 Method for exploiting thickened oil or asphalt

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264736A (en) * 1992-04-28 1993-11-23 Raytheon Company High frequency resonant gate drive for a power MOSFET
US5396128A (en) * 1993-09-13 1995-03-07 Motorola, Inc. Output circuit for interfacing integrated circuits having different power supply potentials
US5589783A (en) * 1994-07-29 1996-12-31 Sgs-Thomson Microelectronics, Inc. Variable input threshold adjustment
US5959504A (en) * 1998-03-10 1999-09-28 Wang; Hongmo Voltage controlled oscillator (VCO) CMOS circuit
US20070090877A1 (en) * 2005-10-21 2007-04-26 Wilinx, Inc. Wideband circuits and methods
US20070115086A1 (en) * 2005-11-17 2007-05-24 Cairo Molins Josep I Multilayer circuit with variable inductor, and method of manufacturing it
US20100039092A1 (en) * 2008-08-05 2010-02-18 St-Ericsson Sa Inductor assembly
US8004361B2 (en) * 2010-01-08 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Constant transconductance operational amplifier and method for operation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3701791A1 (en) * 1987-01-22 1988-08-04 Siemens Ag DIFFERENTIAL AMPLIFIER WITH CONTROLLABLE POWER CONSUMPTION
US6057714A (en) * 1998-05-29 2000-05-02 Conexant Systems, Inc. Double balance differential active ring mixer with current shared active input balun
US6340899B1 (en) 2000-02-24 2002-01-22 Broadcom Corporation Current-controlled CMOS circuits with inductive broadbanding
US6777988B2 (en) 2002-04-30 2004-08-17 John C. Tung 2-level series-gated current mode logic with inductive components for high-speed circuits
US6801090B1 (en) * 2002-08-13 2004-10-05 Applied Microcircuits Corporation High performance differential amplifier
US7181180B1 (en) * 2003-05-15 2007-02-20 Marvell International Ltd. Sigma delta modulated phase lock loop with phase interpolation
US6970029B2 (en) 2003-12-30 2005-11-29 Intel Corporation Variable-delay signal generators and methods of operation therefor
US6937071B1 (en) * 2004-03-16 2005-08-30 Micrel, Incorporated High frequency differential power amplifier
US7532065B2 (en) 2005-07-12 2009-05-12 Agere Systems Inc. Analog amplifier having DC offset cancellation circuit and method of offset cancellation for analog amplifiers
US7598811B2 (en) * 2005-07-29 2009-10-06 Broadcom Corporation Current-controlled CMOS (C3MOS) fully differential integrated wideband amplifier/equalizer with adjustable gain and frequency response without additional power or loading
US7486145B2 (en) * 2007-01-10 2009-02-03 International Business Machines Corporation Circuits and methods for implementing sub-integer-N frequency dividers using phase rotators
US8797100B2 (en) * 2010-03-05 2014-08-05 Epcos Ag Circuit unit, bias circuit with circuit unit and differential amplifier circuit with first and second circuit unit

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5264736A (en) * 1992-04-28 1993-11-23 Raytheon Company High frequency resonant gate drive for a power MOSFET
US5396128A (en) * 1993-09-13 1995-03-07 Motorola, Inc. Output circuit for interfacing integrated circuits having different power supply potentials
US5589783A (en) * 1994-07-29 1996-12-31 Sgs-Thomson Microelectronics, Inc. Variable input threshold adjustment
US5959504A (en) * 1998-03-10 1999-09-28 Wang; Hongmo Voltage controlled oscillator (VCO) CMOS circuit
US20070090877A1 (en) * 2005-10-21 2007-04-26 Wilinx, Inc. Wideband circuits and methods
US20070115086A1 (en) * 2005-11-17 2007-05-24 Cairo Molins Josep I Multilayer circuit with variable inductor, and method of manufacturing it
US20100039092A1 (en) * 2008-08-05 2010-02-18 St-Ericsson Sa Inductor assembly
US8004361B2 (en) * 2010-01-08 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Constant transconductance operational amplifier and method for operation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHEN, M ET AL.: "A CMOS Bluetooth Radio Transceiver Using a Sliding-IF Architecture", IEEE 2003 CUSTOM INTEGRATED CIRCUITS CONFERENCE, pages 455, Retrieved from the Internet <URL:http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=1249439&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F8830%2F27953%2F01249439.pdf%3Farnumber%3D1249439> *

Also Published As

Publication number Publication date
WO2013043954A2 (en) 2013-03-28
WO2013043950A1 (en) 2013-03-28
CN104054267A (en) 2014-09-17
WO2013043954A4 (en) 2013-07-04
DE112012003966B4 (en) 2024-01-11
WO2013043957A2 (en) 2013-03-28
WO2013043954A3 (en) 2013-06-06
DE112012003966T5 (en) 2014-09-18

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