WO2013038539A1 - Electrode for photoelectric conversion devices, and photoelectric conversion device using same - Google Patents

Electrode for photoelectric conversion devices, and photoelectric conversion device using same Download PDF

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Publication number
WO2013038539A1
WO2013038539A1 PCT/JP2011/071053 JP2011071053W WO2013038539A1 WO 2013038539 A1 WO2013038539 A1 WO 2013038539A1 JP 2011071053 W JP2011071053 W JP 2011071053W WO 2013038539 A1 WO2013038539 A1 WO 2013038539A1
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photoelectric conversion
electrode
layer
conversion device
electrode part
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PCT/JP2011/071053
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French (fr)
Japanese (ja)
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善孝 長草
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トヨタ自動車東日本株式会社
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Priority to PCT/JP2011/071053 priority Critical patent/WO2013038539A1/en
Priority to JP2013533650A priority patent/JP6083675B2/en
Priority to PCT/JP2012/073000 priority patent/WO2013039021A1/en
Publication of WO2013038539A1 publication Critical patent/WO2013038539A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an electrode for a photoelectric conversion device used for a photoelectric conversion device and a photoelectric conversion device using the same.
  • a photoelectric conversion device is a device that converts light into electrical energy and a device that converts electrical energy into light.
  • Examples of the former include solar cells, and examples of the latter include light emitting diodes.
  • the Si solar cell will be described by taking a single crystal Si solar cell as an example.
  • a p-type single crystal wafer is converted into a pn junction by changing the surface layer of the wafer to an n-type semiconductor by vapor phase diffusion or implantation of n-type impurity ions.
  • a pin junction is created.
  • a solar cell having a sandwich structure is manufactured by forming a front electrode and a back electrode.
  • a chalcopyrite solar cell will be described as an example. This is a solar cell provided with a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing elements of Group I, Group III and Group VI as constituent components as a p-type light absorption layer (for example, Patent Documents). 1).
  • a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing elements of Group I, Group III and Group VI as constituent components as a p-type light absorption layer (for example, Patent Documents). 1).
  • This solar cell with a CIGS layer generally prevents a back electrode layer, which is a positive electrode made of a Mo metal layer, on a glass substrate such as a soda lime glass (SLG) substrate, and Na unevenness caused by the SLG substrate.
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • SLG soda lime glass
  • a back electrode layer which is a positive electrode made of a Mo metal layer
  • a glass substrate such as a soda lime glass (SLG) substrate
  • SLG soda lime glass
  • the CIGS light absorbing layer is obtained by the following process. That is, the substrate itself provided with the In layer and the Cu—Ga layer as a precursor is accommodated in the annealing chamber and preheated. Thereafter, the precursor is converted into a CIGS layer by raising the temperature of the chamber to a temperature range of 500 to 520 ° C. while introducing H 2 Se gas through a gas introducing tube inserted into the annealing chamber.
  • organic semiconductor thin film solar cells are attracting attention as solar cells suitable for mass production because they can be formed by a coating method.
  • the organic solar cell has a so-called bulk heterojunction structure in which an organic donor material and an organic acceptor material are mixed.
  • an organic thin-film solar cell capable of forming a cathode on a flexible substrate by coating and a low-temperature process has been developed (for example, Patent Document 2).
  • an organic semiconductor thin film solar cell has a structure in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate, and a silver oxide and a reducing agent
  • a laminated structure in which an electron transport layer doped with an organic metal is applied in the vicinity of the cathode not only the cathode is formed at a low temperature, but also the bonding between the organic metal doped layer and the cathode is improved. It is said.
  • the conventional structure it was necessary to provide a pair of electrodes across a region that becomes a pn junction. For this reason, the light irradiation side electrode is required to have good light transmittance and low electrical resistance. For this reason, the light irradiation side electrode needs to be formed by vapor deposition or plating of an expensive rare metal. In addition, the process steps are complicated accordingly. Further, the conventional solar cell has no flexibility, and when it is attached to the surface of a curved member, it must be divided and attached.
  • an object of the present invention is to provide an electrode structure for a photoelectric conversion device that does not require light transmittance as an electrode material and a photoelectric conversion device using the same.
  • the electrode for a photoelectric conversion device of the present invention is an electrode provided on both sides of a photoelectric conversion layer for converting light and electric energy, and is provided on the lower surface side of the photoelectric conversion layer.
  • a side electrode portion and an upper electrode portion provided on the upper surface side of the photoelectric conversion layer, the lower electrode portion and the upper electrode portion include a plurality of warp yarns and a plurality of weft yarns,
  • the warp is composed of a plurality of metal wires provided at a distance from each other
  • the weft is composed of a plurality of insulating wires provided at a distance from each other
  • one of the lower electrode portion and the upper electrode portion is p It functions as a mold electrode
  • the other of the lower electrode part and the upper electrode part functions as an n-type electrode.
  • At least one insulating wire may be provided between the metal wires constituting the upper electrode portion and the lower electrode portion.
  • a p-layer organic semiconductor made of a hole transport material is provided on the P-type electrode with respect to the optoelectronic device electrode, and the n An n-layer organic semiconductor made of an electron transport material is provided on the mold electrode.
  • the electrode provided on the surface of the photoelectric conversion layer on which light is incident is configured to have a plurality of gaps for passing light, it is not necessary to configure the electrode with a transparent electrode. Therefore, it is not necessary to use rare metals as materials. Therefore, an inexpensive electrode material such as Cu or Al can be used for the electrode for the photoelectric conversion device. Further, since the photoelectric conversion device is formed of a flexible net, the photoelectric conversion device can be attached to a curved surface after being formed in a flat shape. Furthermore, since light can be taken in from both surfaces of the photoelectric conversion layer, improvement in conversion efficiency can be expected.
  • the photoelectric conversion device will be described assuming that a solar cell converts light into electric energy.
  • the present invention can also be applied to a device that converts electric energy into light energy.
  • FIG. 1 is a cross-sectional view of a photoelectric conversion device 1 according to an embodiment of the present invention
  • FIG. 2 is a perspective view of the photoelectric conversion device 1.
  • the photoelectric conversion device 1 includes an electrode 12 and a photoelectric conversion layer 13. In FIG. 2, the display of the photoelectric conversion layer 13 is omitted.
  • the electrode 12 includes a lower electrode part 120 and an upper electrode part 220 provided to face the lower electrode part 120 at a predetermined distance.
  • the lower electrode section 120 includes a plurality of warp threads 120A and a plurality of weft threads 120B.
  • the warp yarn 120A and the weft yarn 120B are woven so as to intersect one by one. That is, the lower electrode portion 120 is formed in a plain weave net shape.
  • first metal wire 121 and the first insulating wire 122 are used. As shown in FIG. 2, the first metal wire 121 and the first insulating wire 122 are alternately arranged. In addition, the 1st metal wire 121 and the 1st insulated wire 122 are arranged in parallel at predetermined intervals so that it may not contact.
  • first metal wire 121 for example, a copper wire, a stainless wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used.
  • One end 121E of each first metal wire 121 is connected to the first bus bar 121A as shown in FIG.
  • the first insulating wire 122 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.
  • a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.
  • the second insulating wire is used as the weft 12B. Similar to the first insulating wire 122, the second insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • the upper electrode portion 220 includes a plurality of warp yarns 220A and a plurality of weft yarns 220B.
  • the warp yarn 220A and the weft yarn 220B are woven so as to intersect one by one. That is, the upper electrode portion 220 is formed in a plain weave net shape.
  • Two types of wires are used as the warp yarn 220A. Specifically, the second metal wire 221 and the third insulating wire 222 are used. As shown in FIG. 2, the second metal wire 221 and the third insulating wire 222 are arranged alternately. The second metal wire 221 and the third insulating wire 222 are juxtaposed at a predetermined interval so as not to contact each other.
  • each second metal wire 221 for example, a copper wire, a stainless wire, a wire obtained by performing a metal plating process on the surface of a chemical fiber, or the like can be used.
  • One end 221E of each second metal wire 221 is connected to the second bus bar 221A as shown in FIG.
  • the third insulating wire 222 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.
  • a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.
  • a fourth insulating wire is used as the weft 220B. Similar to the third insulating wire 222, the fourth insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
  • the first metal wire 121, the second metal wire 221, the first insulating wire 122, the third insulating wire 222, etc. are set to a thickness of about 20 ⁇ m to 30 ⁇ m.
  • FIG. 3 is a schematic enlarged view of a circle A region in FIG.
  • the photoelectric conversion layer 13 is provided on one electrode, that is, the lower electrode portion 120, and the p-layer organic semiconductor 13A serving as a hole transport material, and on the other electrode, that is, the upper electrode portion 220, and is transported by electrons.
  • n-layer organic semiconductor 13B as a material.
  • the organic semiconductor 13B is provided on the organic semiconductor 13A. Therefore, the lower electrode part 120 functions as a p-type electrode, and the upper electrode part 220 functions as an n-type electrode.
  • the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B form a pn junction.
  • the p-layer organic semiconductor 13A is formed of a hole transport material.
  • a hole transport material in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) ⁇ -NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7), TPTE1 represented by the chemical formula (8), TCTA represented by the chemical formula (9), NTPA represented by the chemical formula (10), spiro TAD represented by the chemical formula (11), TFREL represented by the chemical formula (12), and the like are used.
  • TAPC triphenylamine
  • the n-layer organic semiconductor 13B is formed of an electron transport material.
  • the electron transport material include Alq 3 represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16).
  • a method for producing the photoelectric conversion device 1 shown in FIG. First, the first metal wire 121, the first insulating wire 122, and the second insulating wire are prepared and plain weave to produce the lower electrode portion 120. Similarly, the upper electrode part 220 is produced. Thereafter, a hole transport material to be the p-layer organic semiconductor 13A is applied to a predetermined portion, for example, one electrode, that is, the lower electrode portion 120. For the application, for example, a printing method using an inkjet printer can be applied.
  • an electron transport material to be the n-layer organic semiconductor 13B is applied on the p-layer.
  • the same printing technique by an ink jet printer as in the case of the p-layer organic semiconductor 13A may be used.
  • a pn junction is formed by the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B.
  • the n-layer organic semiconductor 13B may be applied, and then the p-layer organic semiconductor 13A may be applied.
  • the lower electrode portion 120 is overlaid on the n layer. Thereby, the photoelectric conversion device 1 is produced. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 1 is manufactured.
  • the photoelectric conversion device 1 configured as described above, for example, when light is incident on the photoelectric conversion layer 13 from the upper electrode portion 220 side, the light L and the second metal wire 221 constituting the upper electrode portion 220 It passes between the three insulated wires 222 and enters the inner region from the upper surface of the photoelectric conversion layer 13. As shown in FIG. 3, the light L ′ can enter the inner region also from the lower surface of the photoelectric conversion layer 13.
  • the lower electrode portion 120 and the upper electrode portion 220 are made of a material that transmits light through a plurality of gaps S for passing light, that is, the areas of the gaps S.
  • the electrode provided on the surface of the photoelectric conversion layer 13 on which light is incident is configured to have a plurality of gaps S for passing light, so that it is not necessary to configure the electrode with a transparent electrode. Therefore, it is not necessary to use a rare metal for the transparent electrode as a material. Therefore, Cu, Al, etc. can be used for the electrode 12 for photoelectric conversion devices. Moreover, since the electrode 12 is comprised with the net
  • the upper electrode part 220 is comprised by the net shape with the wire which functions as an electrode, members, such as a bus bar, contact
  • the present invention can be implemented with appropriate modifications within the scope of the present invention.
  • the configuration in which one first insulating wire 122 and one third insulating wire 222 are provided between the first metal wires 121 and between the second metal wires 221 is described with reference to FIG. A plurality may be provided as shown in A).
  • the photoelectric conversion device may be configured by omitting the first insulating wire 122 and the third insulating wire 222 as shown in FIG.
  • Photoelectric conversion device 12 Electrode 120 for photoelectric conversion device: Lower electrode portion 120A: Warp yarn 120B of lower electrode portion: Weft yarn of lower electrode portion 121: First metal wire 122 of lower electrode portion: Lower side Second insulating wire 220 of electrode part: Upper electrode part 220A: Warp thread 220B of upper electrode part: Weft thread 221 of upper electrode part: Second metal wire 222 of upper electrode part: Second insulating wire 13 of upper electrode part: Photoelectric conversion Layer 13A: p-layer organic semiconductor 13B: n-layer organic semiconductor 14: protective layer

Abstract

This electrode for photoelectric conversion devices is provided with: a lower electrode part (120) that is provided on the lower surface side of a photoelectric conversion layer (13); and an upper electrode part (220) that is provided on the upper surface side of the photoelectric conversion layer. The lower electrode part and the upper electrode part respectively comprise a plurality of warp yarns (120A, 220A) and a plurality of weft yarns (120B, 220B). The warp yarns are composed of a plurality of metal wires (121, 221) that are arranged at intervals from each other, and the weft yarns are composed of a plurality of insulating wires that are arranged at intervals from each other. One of the lower electrode part and the upper electrode part functions as a p-type electrode, and the other one of the lower electrode part and the upper electrode part functions as an n-type electrode.

Description

光電変換デバイス用電極及びそれを用いた光電変換デバイスElectrode for photoelectric conversion device and photoelectric conversion device using the same
　本発明は、光電変換デバイスに用いられる光電変換デバイス用電極と、それを用いた光電変換デバイスに関する。 The present invention relates to an electrode for a photoelectric conversion device used for a photoelectric conversion device and a photoelectric conversion device using the same.
　光電変換デバイスは、光を電気エネルギーに変換するデバイス及び電気エネルギーを光に変換するデバイスである。前者の例としては太陽電池などがあり、後者の例としては発光ダイオードなどがある。 A photoelectric conversion device is a device that converts light into electrical energy and a device that converts electrical energy into light. Examples of the former include solar cells, and examples of the latter include light emitting diodes.
　今日、クリーンエネルギーの一つとして太陽電池による電力供給の必要性が再認識されている。太陽電池にはＳｉ太陽電池、化合物太陽電池のほか有機半導体薄膜太陽電池など各種のものがある。 Today, the need for solar power supply as a clean energy is recognized again. There are various types of solar cells such as Si solar cells, compound solar cells, and organic semiconductor thin film solar cells.
　Ｓｉ太陽電池について単結晶Ｓｉ太陽電池を例にとって説明すると、ｐ型の単結晶ウエハに気相拡散やｎ型不純物イオンの打ち込み等によってウエハの表面層をｎ型半導体にするなどしてｐｎ接合やｐｉｎ接合が作られる。そして表面電極と裏面電極とを形成してサンドイッチ構造の太陽電池が作製される。 The Si solar cell will be described by taking a single crystal Si solar cell as an example. A p-type single crystal wafer is converted into a pn junction by changing the surface layer of the wafer to an n-type semiconductor by vapor phase diffusion or implantation of n-type impurity ions. A pin junction is created. A solar cell having a sandwich structure is manufactured by forming a front electrode and a back electrode.
　化合物太陽電池の中には各種のものがあるが、エネルギー変換効率が高く、経年変化による光劣化が起こりにくく、耐放射性特性に優れ、光吸収波長領域が広く、光吸収係数が大きいといった利点を有するカルコパイライト型太陽電池を例にとって説明する。これはＩ族、ＩＩＩ族及びＶＩ族の元素を構成成分とするカルコパイライト化合物（Ｃｕ（Ｉｎ＋Ｇａ）Ｓｅ2）から成るＣＩＧＳ層をｐ型の光吸収層として備えた太陽電池である（例えば特許文献１）。 There are various types of compound solar cells, but they have the advantages of high energy conversion efficiency, low light degradation due to secular change, excellent radiation resistance, wide light absorption wavelength range, and large light absorption coefficient. A chalcopyrite solar cell will be described as an example. This is a solar cell provided with a CIGS layer made of a chalcopyrite compound (Cu (In + Ga) Se 2 ) containing elements of Group I, Group III and Group VI as constituent components as a p-type light absorption layer (for example, Patent Documents). 1).
　このＣＩＧＳ層を備えた太陽電池は、一般的に、ソーダライムガラス（ＳＬＧ）基板といったガラス基板上に、Ｍｏ金属層からなる正極たる裏面電極層と、ＳＬＧ基板に由来して生じるＮａムラを防止するためのＮａディップ層と、ＣＩＧＳ光吸収層と、ｎ型のバッファ層と、負極たる透明電極層による最外表面層と、を備えた多層積層構造で構成される。
　ここで、ｎ型のバッファ層はＣｄＳ、ＺｎＯ、ＩｎＳなどで形成され、透明電極層はＺｎＯＡｌなどが用いられる。 This solar cell with a CIGS layer generally prevents a back electrode layer, which is a positive electrode made of a Mo metal layer, on a glass substrate such as a soda lime glass (SLG) substrate, and Na unevenness caused by the SLG substrate. For forming a multilayer structure including a Na dip layer, a CIGS light absorption layer, an n-type buffer layer, and an outermost surface layer formed of a transparent electrode layer as a negative electrode.
Here, the n-type buffer layer is made of CdS, ZnO, InS or the like, and the transparent electrode layer is made of ZnOAl or the like.
　この多層積層構造にあっては、表面の受光部から照射光が入射すると、多層積層構造のｐ－ｎ接合付近では、バンドギャップ以上のエネルギーを有する照射光によって励起されて一対の電子及び正孔が生じる。励起された電子と正孔とは拡散によりｐ－ｎ接合部に達し、接合の内部電界により、電子がｎ領域に、正孔がｐ領域に集合して分離される。この結果、ｎ領域が負に帯電し、ｐ領域が正に帯電し、各領域に設けた電極間で電位差が生じる。この電位差を起電力として、各電極間を導線で結線したときに光電流が得られる。 In this multilayer laminated structure, when irradiation light enters from the light receiving portion on the surface, a pair of electrons and holes are excited in the vicinity of the pn junction of the multilayer laminated structure by the irradiation light having energy greater than the band gap. Occurs. The excited electrons and holes reach the pn junction by diffusion, and the electrons are collected in the n region and the holes are separated in the p region due to the internal electric field of the junction. As a result, the n region is negatively charged, the p region is positively charged, and a potential difference is generated between the electrodes provided in each region. Using this potential difference as an electromotive force, a photocurrent is obtained when the electrodes are connected by a conductive wire.
　ＣＩＧＳ光吸収層は次のような工程によって得られる。即ち、Ｉｎ層とＣｕ－Ｇａ層とを積層状態にして前駆体として備える基板自体をアニール処理室内に収容してプレヒートを行う。その後、アニール処理室内に挿入したガス導入管によってＨ2Ｓｅガスを導入しつつ室内を５００乃至５２０℃の温度範囲に昇温することによって、前駆体をＣＩＧＳ層に変換する。 The CIGS light absorbing layer is obtained by the following process. That is, the substrate itself provided with the In layer and the Cu—Ga layer as a precursor is accommodated in the annealing chamber and preheated. Thereafter, the precursor is converted into a CIGS layer by raising the temperature of the chamber to a temperature range of 500 to 520 ° C. while introducing H 2 Se gas through a gas introducing tube inserted into the annealing chamber.
　これに対し、有機半導体薄膜太陽電池は塗布法によって形成することができるため、大量生産に適した太陽電池として注目されている。有機太陽電池は、有機ドナー材料と有機アクセプター材料を混合した、所謂バルクヘテロジャンクション構造を有している。その中でも、塗布及び低温プロセスでフレキシブル基板への陰極形成を可能とした有機薄膜太陽電池が開発されている（例えば、特許文献２）。 On the other hand, organic semiconductor thin film solar cells are attracting attention as solar cells suitable for mass production because they can be formed by a coating method. The organic solar cell has a so-called bulk heterojunction structure in which an organic donor material and an organic acceptor material are mixed. Among them, an organic thin-film solar cell capable of forming a cathode on a flexible substrate by coating and a low-temperature process has been developed (for example, Patent Document 2).
　特許文献２によれば、有機半導体薄膜太陽電池が、基板の一方面上に、陽極、バルクヘテロジャンクション構造を有する光電変換層及び陰極が順に積層された構造を有していて、酸化銀と還元剤からなる陰極と、陰極近傍に有機金属をドープした電子輸送層を塗布した積層構造とすることにより、低温で陰極が形成されるだけでなく、有機金属ドープ層と陰極との接合が改良されるとしている。 According to Patent Document 2, an organic semiconductor thin film solar cell has a structure in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate, and a silver oxide and a reducing agent By forming a laminated structure in which an electron transport layer doped with an organic metal is applied in the vicinity of the cathode, not only the cathode is formed at a low temperature, but also the bonding between the organic metal doped layer and the cathode is improved. It is said.
特開２００６－１９６７７１号公報Japanese Patent Laid-Open No. 2006-196771 特開２０１１－１２４４６８号公報JP 2011-124468 A
　しかしながら、従来の構造においては、ｐｎ接合となる領域を挟んで一対の電極を設ける必要があった。そのため、光照射側の電極は、光透過性がよく、かつ電気抵抗が小さいものが要求されており、そのために、光照射側の電極は高価なレアメタルを蒸着やメッキにより形成する必要がある。またそれに伴いプロセス工程が複雑であった。
　また、従来の太陽電池は屈曲性がなく、曲面形状の部材表面に取り付ける場合には、細分化して取り付ける必要があった。 However, in the conventional structure, it was necessary to provide a pair of electrodes across a region that becomes a pn junction. For this reason, the light irradiation side electrode is required to have good light transmittance and low electrical resistance. For this reason, the light irradiation side electrode needs to be formed by vapor deposition or plating of an expensive rare metal. In addition, the process steps are complicated accordingly.
Further, the conventional solar cell has no flexibility, and when it is attached to the surface of a curved member, it must be divided and attached.
　そこで、本発明は、電極材料として光透過性を要求しない、光電変換デバイス用電極構造とそれを用いた光電変換デバイスを提供することを目的とする。 Therefore, an object of the present invention is to provide an electrode structure for a photoelectric conversion device that does not require light transmittance as an electrode material and a photoelectric conversion device using the same.
　上記目的を達成するために、本発明の光電変換デバイス用電極は、光と電気エネルギーとを変換する光電変換層の両面に設けられる電極であって、上記光電変換層の下面側に設けられる下側電極部と、上記光電変換層の上面側に設けられる上側電極部と、を備え、上記下側電極部と上記上側電極部とは、複数の縦糸と、複数の横糸と、を備え、上記縦糸は互いに距離を置いて設けられた複数の金属線材からなり、上記横糸は互いに距離を置いて設けられた複数の絶縁線材からなり、上記下側電極部と上記上側電極部との一方がｐ型電極として機能し、上記下側電極部と上記上側電極部との他方がｎ型電極として機能すること特徴としている。
　前記絶縁線材が、上記上側電極部と上記下側電極部とを構成する金属線材同士の間に、少なくとも１本設けられてもよい。 In order to achieve the above object, the electrode for a photoelectric conversion device of the present invention is an electrode provided on both sides of a photoelectric conversion layer for converting light and electric energy, and is provided on the lower surface side of the photoelectric conversion layer. A side electrode portion and an upper electrode portion provided on the upper surface side of the photoelectric conversion layer, the lower electrode portion and the upper electrode portion include a plurality of warp yarns and a plurality of weft yarns, The warp is composed of a plurality of metal wires provided at a distance from each other, the weft is composed of a plurality of insulating wires provided at a distance from each other, and one of the lower electrode portion and the upper electrode portion is p It functions as a mold electrode, and the other of the lower electrode part and the upper electrode part functions as an n-type electrode.
At least one insulating wire may be provided between the metal wires constituting the upper electrode portion and the lower electrode portion.
　上記目的を達成するために、本発明の光電変換デバイスは、前記光電子デバイス用電極に対して、前記Ｐ型電極上には正孔輸送材料でなるｐ層の有機半導体が設けられ、かつ前記ｎ型電極上には電子輸送材料でなるｎ層の有機半導体が設けられている。 In order to achieve the above object, in the photoelectric conversion device of the present invention, a p-layer organic semiconductor made of a hole transport material is provided on the P-type electrode with respect to the optoelectronic device electrode, and the n An n-layer organic semiconductor made of an electron transport material is provided on the mold electrode.
　本発明によれば、光が入射する光電変換層の面に設ける電極を複数の光通過用の隙間を有するように構成したことで、電極を透明電極で構成することが不要となり、透明電極のためのレアメタルを材料として使用しなくて済む。そのため、光電変換デバイス用の電極はＣｕやＡｌなどの安価に入手可能な材料を使用することができる。
　また、光電変換デバイスは、電極が可撓性を有するネットで構成されているため、平面状に形成した後に、曲面状の表面に取り付けることができる。
　さらに、光電変換層の両面から光を取り込むことができるので、変換効率の向上を期待できる。 According to the present invention, since the electrode provided on the surface of the photoelectric conversion layer on which light is incident is configured to have a plurality of gaps for passing light, it is not necessary to configure the electrode with a transparent electrode. Therefore, it is not necessary to use rare metals as materials. Therefore, an inexpensive electrode material such as Cu or Al can be used for the electrode for the photoelectric conversion device.
Further, since the photoelectric conversion device is formed of a flexible net, the photoelectric conversion device can be attached to a curved surface after being formed in a flat shape.
Furthermore, since light can be taken in from both surfaces of the photoelectric conversion layer, improvement in conversion efficiency can be expected.
本発明の実施形態に係る光電変換デバイスの断面図である。It is sectional drawing of the photoelectric conversion device which concerns on embodiment of this invention. 図１に示す光電変換デバイスにおける電極構造を示す斜視図である。It is a perspective view which shows the electrode structure in the photoelectric conversion device shown in FIG. 図１に示す符号Ａの領域の拡大図である。It is an enlarged view of the area | region of the code | symbol A shown in FIG. 本発明の他の実施形態に係る光電変換デバイスの断面図である。It is sectional drawing of the photoelectric conversion device which concerns on other embodiment of this invention.
　以下、図面を参照しながら、本発明の実施形態を詳細に説明する。特に光電変換デバイスが、光を電気エネルギーに変換するものとして太陽電池を想定して説明するが、電気エネルギーを光エネルギーに変換するものであっても同様に適用することができる。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In particular, the photoelectric conversion device will be described assuming that a solar cell converts light into electric energy. However, the present invention can also be applied to a device that converts electric energy into light energy.
　図１は本発明の実施形態に係る光電変換デバイス１の断面図であり、図２は光電変換デバイス１の斜視図である。 FIG. 1 is a cross-sectional view of a photoelectric conversion device 1 according to an embodiment of the present invention, and FIG. 2 is a perspective view of the photoelectric conversion device 1.
　光電変換デバイス１は、電極１２と、光電変換層１３と、から構成されている。なお、図２では、光電変換層１３の表示を省略している。 The photoelectric conversion device 1 includes an electrode 12 and a photoelectric conversion layer 13. In FIG. 2, the display of the photoelectric conversion layer 13 is omitted.
　電極１２は、図２に示すように、下側電極部１２０と、所定の距離を置いて下側電極部１２０と対向するように設けられる上側電極部２２０と、から構成されている。 As shown in FIG. 2, the electrode 12 includes a lower electrode part 120 and an upper electrode part 220 provided to face the lower electrode part 120 at a predetermined distance.
　下側電極部１２０は、複数の縦糸１２０Ａと、複数の横糸１２０Ｂと、を備えている。縦糸１２０Ａと横糸１２０Ｂとは１本ごとに交差するように織られている。つまり下側電極部１２０は平織りのネット状に形成されている。 The lower electrode section 120 includes a plurality of warp threads 120A and a plurality of weft threads 120B. The warp yarn 120A and the weft yarn 120B are woven so as to intersect one by one. That is, the lower electrode portion 120 is formed in a plain weave net shape.
　縦糸１２０Ａとして、２種の線材を利用する。具体的には、第１金属線材１２１と第１絶縁線材１２２とを利用する。
　図２に示すように、第１金属線材１２１と第１絶縁線材１２２とは交互に並べられている。なお、第１金属線材１２１と第１絶縁線材１２２とは接触しないよう、所定の間隔を置いて並設されている。 Two types of wires are used as the warp 120A. Specifically, the first metal wire 121 and the first insulating wire 122 are used.
As shown in FIG. 2, the first metal wire 121 and the first insulating wire 122 are alternately arranged. In addition, the 1st metal wire 121 and the 1st insulated wire 122 are arranged in parallel at predetermined intervals so that it may not contact.
　これらの第１金属線材１２１として、例えば銅線、ステンレス線、化学繊維の表面に金属めっき処理を施した線などを利用することができる。各第１金属線材１２１の一端部１２１Ｅは図２に示すように第１のバスバー１２１Ａに接続されている。 As the first metal wire 121, for example, a copper wire, a stainless wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used. One end 121E of each first metal wire 121 is connected to the first bus bar 121A as shown in FIG.
　第１絶縁線材１２２は、例えばナイロン樹脂、シリコーン樹脂、ウレタン樹脂、エポキシ樹脂、ポリカーボネート樹脂、ビニル樹脂などの柔軟性に富む絶縁樹脂によって構成されている。 The first insulating wire 122 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.
　横糸１２Ｂとして第２絶縁線材を用いる。第２絶縁線材は、第１絶縁線材１２２と同様に、例えばナイロン樹脂、シリコーン樹脂、ウレタン樹脂、エポキシ樹脂、ポリカーボネート樹脂、ビニル樹脂などの柔軟性に富む絶縁樹脂によって構成されている。 The second insulating wire is used as the weft 12B. Similar to the first insulating wire 122, the second insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
　上側電極部２２０は、複数の縦糸２２０Ａと、複数の横糸２２０Ｂと、を備えている。縦糸２２０Ａと横糸２２０Ｂとは１本ごとに交差するように織られている。つまり上側電極部２２０は平織りのネット状に形成されている。 The upper electrode portion 220 includes a plurality of warp yarns 220A and a plurality of weft yarns 220B. The warp yarn 220A and the weft yarn 220B are woven so as to intersect one by one. That is, the upper electrode portion 220 is formed in a plain weave net shape.
　縦糸２２０Ａとして、２種の線材を利用する。具体的には、第２金属線材２２１と第３絶縁線材２２２とを利用する。
　図２に示すように、第２金属線材２２１と第３絶縁線材２２２とは交互に並べられている。なお、第２金属線材２２１と第３絶縁線材２２２とは接触しないよう、所定の間隔を置いて並設されている。 Two types of wires are used as the warp yarn 220A. Specifically, the second metal wire 221 and the third insulating wire 222 are used.
As shown in FIG. 2, the second metal wire 221 and the third insulating wire 222 are arranged alternately. The second metal wire 221 and the third insulating wire 222 are juxtaposed at a predetermined interval so as not to contact each other.
　第２金属線材２２１として、例えば銅線、ステンレス線、化学繊維の表面に金属めっき処理を施した線などを利用することができる。各第２金属線材２２１の一端部２２１Ｅは図２に示すように第２のバスバー２２１Ａに接続されている。 As the second metal wire 221, for example, a copper wire, a stainless wire, a wire obtained by performing a metal plating process on the surface of a chemical fiber, or the like can be used. One end 221E of each second metal wire 221 is connected to the second bus bar 221A as shown in FIG.
　第３絶縁線材２２２は、例えばナイロン樹脂、シリコーン樹脂、ウレタン樹脂、エポキシ樹脂、ポリカーボネート樹脂、ビニル樹脂などの柔軟性に富む絶縁樹脂によって構成されている。 The third insulating wire 222 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.
　横糸２２０Ｂとして第４絶縁線材を用いる。第４絶縁線材は、第３絶縁線材２２２と同様に、例えばナイロン樹脂、シリコーン樹脂、ウレタン樹脂、エポキシ樹脂、ポリカーボネート樹脂、ビニル樹脂などの柔軟性に富む絶縁樹脂によって構成されている。 A fourth insulating wire is used as the weft 220B. Similar to the third insulating wire 222, the fourth insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.
　第１金属線材１２１、第２金属線材２２１、第１絶縁線材１２２及び第３絶縁線材２２２などは、２０μｍ～３０μｍ程度の太さに設定されている。 The first metal wire 121, the second metal wire 221, the first insulating wire 122, the third insulating wire 222, etc. are set to a thickness of about 20 μm to 30 μm.
　次に、光電変換層１３について説明する。
　図３は図１の円Ａ領域の模式的拡大図である。
　光電変換層１３は、一方の電極、つまり下側電極部１２０上に設けられて正孔輸送材料となるｐ層の有機半導体１３Ａと、他方の電極、つまり上側電極部２２０上に設けられ電子輸送材料となるｎ層の有機半導体１３Ｂと、から構成されている。なお、図３に示すように、有機半導体１３Ａ上に有機半導体１３Ｂが設けられている。よって、下側電極部１２０はｐ型電極として機能し、上側電極部２２０はｎ型電極として機能する。ｐ層の有機半導体１３Ａとｎ層の有機半導体１３Ｂとはｐｎ接合を形成している。 Next, the photoelectric conversion layer 13 will be described.
FIG. 3 is a schematic enlarged view of a circle A region in FIG.
The photoelectric conversion layer 13 is provided on one electrode, that is, the lower electrode portion 120, and the p-layer organic semiconductor 13A serving as a hole transport material, and on the other electrode, that is, the upper electrode portion 220, and is transported by electrons. And n-layer organic semiconductor 13B as a material. In addition, as shown in FIG. 3, the organic semiconductor 13B is provided on the organic semiconductor 13A. Therefore, the lower electrode part 120 functions as a p-type electrode, and the upper electrode part 220 functions as an n-type electrode. The p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B form a pn junction.
　次に、ｐ層の有機半導体１３Ａとｎ層の有機半導体１３Ｂの材料について説明する。
　ｐ層の有機半導体１３Ａは、正孔輸送材料によって形成される。正孔輸送材料としては、化学式（１）で示されるトリフェニルアミン（ＴＡＰＣ）、化学式（２）で示されるトリフェニルアミンの二量体であるＴＰＤその他の芳香族アミンのほか、化学式（３）で示されるα－ＮＰＤ、化学式（４）で示される（ＤＴＰ）ＤＰＰＤ、化学式（５）で示されるｍ－ＭＴＤＡＴＡ、化学式（６）で示されるＨＴＭ１、化学式（７）で示される２－ＴＮＡＴＡ、化学式（８）で示されるＴＰＴＥ１、化学式（９）で示されるＴＣＴＡ、化学式（１０）で示されるＮＴＰＡ、化学式（１１）で示されるスピローＴＡＤ、化学式（１２）で示されるＴＦＬＥＬなどが用いられる。 Next, materials of the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B will be described.
The p-layer organic semiconductor 13A is formed of a hole transport material. As a hole transport material, in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) Α-NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7), TPTE1 represented by the chemical formula (8), TCTA represented by the chemical formula (9), NTPA represented by the chemical formula (10), spiro TAD represented by the chemical formula (11), TFREL represented by the chemical formula (12), and the like are used.
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000002
Figure JPOXMLDOC01-appb-C000002
Figure JPOXMLDOC01-appb-C000003
Figure JPOXMLDOC01-appb-C000003
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000007
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000008
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000009
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000010
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000011
Figure JPOXMLDOC01-appb-C000012
Figure JPOXMLDOC01-appb-C000012
　ｎ層の有機半導体１３Ｂは電子輸送材料によって形成される。電子輸送材料には、化学式（１３）で示されるＡｌｑ3、化学式（１４）で示されるＢＣＰ、化学式（１５）で示されるオキサジアゾール誘導体、化学式（１６）で示されるオキサジアゾール二量体、化学式（１７）で示されるスターバストオキサジアゾール、化学式（１８）で示されるトリアゾール誘導体、化学式（１９）で示されるフェニルキシキサリン誘導体、化学式（２０）で示されるシロール誘導体などが挙げられる。 The n-layer organic semiconductor 13B is formed of an electron transport material. Examples of the electron transport material include Alq 3 represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16). And Starbust Oxadiazole represented by Chemical Formula (17), Triazole Derivative represented by Chemical Formula (18), Phenylxoxaline Derivative represented by Chemical Formula (19), Silole Derivative represented by Chemical Formula (20), and the like.
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000013
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000014
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000015
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000016
Figure JPOXMLDOC01-appb-C000017
Figure JPOXMLDOC01-appb-C000017
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000018
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000019
Figure JPOXMLDOC01-appb-C000020
Figure JPOXMLDOC01-appb-C000020
　図１に示す光電変換デバイス１の製造方法について概略説明する。まず、第１金属線材１２１、第１絶縁線材１２２、第２絶縁線材を用意し、平織りして下側電極部１２０を作製する。同様に、上側電極部２２０を作製する。その後、ｐ層の有機半導体１３Ａとなる正孔輸送材料を所定の箇所、例えば一方の電極、つまり下側電極部１２０上に塗布する。塗布には、例えばインクジェットプリンタによる印刷方法を適用可能である。 A method for producing the photoelectric conversion device 1 shown in FIG. First, the first metal wire 121, the first insulating wire 122, and the second insulating wire are prepared and plain weave to produce the lower electrode portion 120. Similarly, the upper electrode part 220 is produced. Thereafter, a hole transport material to be the p-layer organic semiconductor 13A is applied to a predetermined portion, for example, one electrode, that is, the lower electrode portion 120. For the application, for example, a printing method using an inkjet printer can be applied.
　次に、ｎ層の有機半導体１３Ｂとなる電子輸送材料をｐ層の上に塗布する。塗布にはｐ層の有機半導体１３Ａの場合と同様のインクジェットプリンタによる印刷技術を用いてもよい。 Next, an electron transport material to be the n-layer organic semiconductor 13B is applied on the p-layer. For the application, the same printing technique by an ink jet printer as in the case of the p-layer organic semiconductor 13A may be used.
　これにより、ｐ層の有機半導体１３Ａとｎ層の有機半導体１３Ｂとによってｐｎ接合が形成される。なお、ｎ層の有機半導体１３Ｂから塗布しその後ｐ層の有機半導体１３Ａを塗布してもよい。 Thereby, a pn junction is formed by the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B. The n-layer organic semiconductor 13B may be applied, and then the p-layer organic semiconductor 13A may be applied.
　その後、ｎ層の上に下側電極部１２０を重ね合わせる。これにより、光電変換デバイス１が作製される。なお、図１に示す光電変換デバイス１が作製される手法であれば上述の方法に限定されない。 Thereafter, the lower electrode portion 120 is overlaid on the n layer. Thereby, the photoelectric conversion device 1 is produced. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 1 is manufactured.
　このように構成された光電変換デバイス１では、例えば、上側電極部２２０側から光電変換層１３内へ光が入射される場合、光Ｌは上側電極部２２０を構成する第２金属線材２２１と第３絶縁線材２２２との間を通って、光電変換層１３の上面から内側領域に入り込む。図３に示すように、光Ｌ′は、光電変換層１３の下面からも内側領域に入り込むができる。下側電極部１２０と上側電極部２２０は、複数の光通過用の隙間Ｓ、つまり隙間Ｓの領域を光を透過させる材料で構成している。 In the photoelectric conversion device 1 configured as described above, for example, when light is incident on the photoelectric conversion layer 13 from the upper electrode portion 220 side, the light L and the second metal wire 221 constituting the upper electrode portion 220 It passes between the three insulated wires 222 and enters the inner region from the upper surface of the photoelectric conversion layer 13. As shown in FIG. 3, the light L ′ can enter the inner region also from the lower surface of the photoelectric conversion layer 13. The lower electrode portion 120 and the upper electrode portion 220 are made of a material that transmits light through a plurality of gaps S for passing light, that is, the areas of the gaps S.
　このように本発明によれば、光が入射する光電変換層１３の面に設ける電極を複数の光通過用の隙間Ｓを有するように構成したことで、電極を透明電極で構成することが不要となり、透明電極のためのレアメタルを材料として使用しなくて済む。そのため、光電変換デバイス用の電極１２はＣｕやＡｌなどを使用することができる。
　また、光電変換デバイス１は、電極１２が可撓性を有するネットで構成されているため、平面状に形成した後に、曲面状の表面に取り付けることができる。
　また、上側電極部２２０は、電極として機能する線材でネット状に構成されているため、ネットの端部にバスバーなどの部材を圧着或いは溶着することで、バスバーなどの部材が線材に接触する。従って、電気を取り出す製造工程が容易になる。
　さらに、光電変換層１３の両面から光を取り込むことができるので、変換効率の向上を期待できる。 As described above, according to the present invention, the electrode provided on the surface of the photoelectric conversion layer 13 on which light is incident is configured to have a plurality of gaps S for passing light, so that it is not necessary to configure the electrode with a transparent electrode. Therefore, it is not necessary to use a rare metal for the transparent electrode as a material. Therefore, Cu, Al, etc. can be used for the electrode 12 for photoelectric conversion devices.
Moreover, since the electrode 12 is comprised with the net | network which has flexibility, the photoelectric conversion device 1 can be attached to the curved surface after forming in planar shape.
Moreover, since the upper electrode part 220 is comprised by the net shape with the wire which functions as an electrode, members, such as a bus bar, contact | connect a wire, such as a bus bar, to the edge part of a net | network. Therefore, the manufacturing process for extracting electricity is facilitated.
Furthermore, since light can be taken in from both surfaces of the photoelectric conversion layer 13, an improvement in conversion efficiency can be expected.
　以上本発明の実施形態を説明したが、本発明の範囲において適宜変更して実施することができる。
　上記構成では、第１金属線材１２１同士の間に、第２金属線材２２１同士の間に、第１絶縁線材１２２、第３絶縁線材２２２がそれぞれ１本設けられる構成を説明したが、図４（Ａ）に示すように、複数本設けられてもよい。光電変換デバイスは、図４（Ｂ）に示すように第１絶縁線材１２２、第３絶縁線材２２２を省略して構成されてもよい。 Although the embodiments of the present invention have been described above, the present invention can be implemented with appropriate modifications within the scope of the present invention.
In the above configuration, the configuration in which one first insulating wire 122 and one third insulating wire 222 are provided between the first metal wires 121 and between the second metal wires 221 is described with reference to FIG. A plurality may be provided as shown in A). The photoelectric conversion device may be configured by omitting the first insulating wire 122 and the third insulating wire 222 as shown in FIG.
１　　　：光電変換デバイス
１２　　：光電変換デバイス用の電極
１２０　：下側電極部
１２０Ａ：下側電極部の縦糸
１２０Ｂ：下側電極部の横糸
１２１　：下側電極部の第１金属線材
１２２　：下側電極部の第２絶縁線材
２２０　：上側電極部
２２０Ａ：上側電極部の縦糸
２２０Ｂ：上側電極部の横糸
２２１　：上側電極部の第２金属線材
２２２　：上側電極部の第２絶縁線材
１３　　：光電変換層
１３Ａ　：ｐ層の有機半導体
１３Ｂ　：ｎ層の有機半導体
１４　　：保護層 1: Photoelectric conversion device 12: Electrode 120 for photoelectric conversion device: Lower electrode portion 120A: Warp yarn 120B of lower electrode portion: Weft yarn of lower electrode portion 121: First metal wire 122 of lower electrode portion: Lower side Second insulating wire 220 of electrode part: Upper electrode part 220A: Warp thread 220B of upper electrode part: Weft thread 221 of upper electrode part: Second metal wire 222 of upper electrode part: Second insulating wire 13 of upper electrode part: Photoelectric conversion Layer 13A: p-layer organic semiconductor 13B: n-layer organic semiconductor 14: protective layer

Claims (3)

  1. 　光と電気エネルギーとを変換する光電変換層の両面に設けられる光電変換デバイス用電極であって、
    　上記光電変換層の下面側に設けられる下側電極部と、上記光電変換層の上面側に設けられる上側電極部と、を備え、
    　上記下側電極部と上記上側電極部とは、複数の縦糸と、複数の横糸と、を備え、
    　上記縦糸は互いに距離を置いて設けられた複数の金属線材からなり、
    　上記横糸は互いに距離を置いて設けられた複数の絶縁線材からなり、
    　上記下側電極部と上記上側電極部との一方がｐ型電極として機能し、上記下側電極部と上記上側電極部との他方がｎ型電極として機能する、光電変換デバイス用電極。     An electrode for a photoelectric conversion device provided on both sides of a photoelectric conversion layer that converts light and electric energy,
    A lower electrode portion provided on the lower surface side of the photoelectric conversion layer, and an upper electrode portion provided on the upper surface side of the photoelectric conversion layer,
    The lower electrode portion and the upper electrode portion include a plurality of warp yarns and a plurality of weft yarns,
    The warp is composed of a plurality of metal wires provided at a distance from each other,
    The weft consists of a plurality of insulated wires provided at a distance from each other,
    One of the lower electrode part and the upper electrode part functions as a p-type electrode, and the other of the lower electrode part and the upper electrode part functions as an n-type electrode.
  2. 　前記絶縁線材が、上記上側電極部と上記下側電極部とを構成する金属線材同士の間に、少なくとも１本設けられていることを特徴とする、請求項１に記載の光電変換デバイス用電極。 2. The photoelectric conversion device electrode according to claim 1, wherein at least one insulating wire is provided between metal wires constituting the upper electrode portion and the lower electrode portion. .
  3. 　請求項１又は２に記載の光電子デバイス用電極に対して、前記Ｐ型電極上には正孔輸送材料でなるｐ層の有機半導体が設けられ、かつ前記ｎ型電極上には電子輸送材料でなるｎ層の有機半導体が設けられている、光電変換デバイス。 3. The optoelectronic device electrode according to claim 1, wherein a p-layer organic semiconductor made of a hole transport material is provided on the P-type electrode, and an electron transport material is provided on the n-type electrode. A photoelectric conversion device provided with an n-layer organic semiconductor.
PCT/JP2011/071053 2011-09-14 2011-09-14 Electrode for photoelectric conversion devices, and photoelectric conversion device using same WO2013038539A1 (en)

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PCT/JP2012/073000 WO2013039021A1 (en) 2011-09-14 2012-09-09 Display device, electrode for photoelectric conversion device, photoelectric conversion device, and method for manufacturing photoelectric conversion device

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