WO2013039021A1 - Display device, electrode for photoelectric conversion device, photoelectric conversion device, and method for manufacturing photoelectric conversion device - Google Patents

Abstract

A display (2) of a light-emitting device is configured from: a light-emitting layer (61) comprising an organic EL material; one wire electrode group (62), provided on one surface side of the light-emitting layer (61), comprising electroconductive wire materials (62a) which extend laterally and which are arranged along the vertical direction at intervals; and the other wire electrode group (63), provided on the other surface side of the light-emitting layer (61), comprising electroconductive wire materials (63a) which extend vertically and which are arranged along the lateral direction at intervals. In the one wire electrode group (62), layout adjustment wire materials (62b) extending laterally are provided between the electroconductive wire materials (62a), whereby the spacing between the electroconductive wire materials (62a) is maintained. In the other wire electrode group (63), layout adjustment wire materials (63b) extending vertically are provided between the electroconductive wire materials (63a), whereby the spacing between the electroconductive wire materials (63a) is maintained.

Description

Display device, electrode for photoelectric conversion device, photoelectric conversion device, and method for manufacturing photoelectric conversion device

The present invention relates to a flexible display device, an electrode for a photoelectric conversion device used for a photoelectric conversion device, a photoelectric conversion device using the same, and a method for manufacturing the photoelectric conversion device.

A photoelectric conversion device is a device that converts electrical energy into light and a device that converts light into electrical energy. Examples of the former include a display device using a light emitting element, and examples of the latter include a solar cell.

Conventionally, as display devices, there are monochromatic or color organic EL display devices using organic EL (Electro Luminescence), liquid crystal display devices using white EL illumination for backlight illumination, and the like. There is a so-called active matrix type organic EL display device in which a light emitting element and a TFT are formed for each pixel on a glass substrate or a transparent plastic substrate. In this type, a light emitting device is formed by laminating an ITO anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a metal cathode sequentially on a glass substrate or a transparent plastic substrate. Is formed.

An organic thin film solar cell using an organic semiconductor is known as a solar cell. Since organic thin film solar cells can be formed by a simple film formation method, they are attracting attention as solar cells that are easy to manufacture and suitable for mass production. Various organic thin-film solar cells having so-called bulk heterojunction structures and nanophase separation structures have been proposed. In these structures, since a wide contact interface between the p-type organic semiconductor and the n-type organic semiconductor can be secured, the photoelectric conversion efficiency can be improved.

Such an organic thin film solar cell is prepared, for example, by dissolving a hole transport material and an electron transport material in various solvents to prepare a material-containing liquid, and depositing the material-containing liquid on the surface of the electrode. It is manufactured by forming a photoelectric conversion layer including an organic semiconductor or an n-type organic semiconductor.

For example, Patent Document 1 below proposes an organic thin-film solar cell in which an anode, a photoelectric conversion layer having a bulk heterojunction structure, and a cathode are sequentially laminated on one surface of a substrate. In this patent document 1, not only a cathode is formed at a low temperature but also an organic metal by forming a laminated structure in which a cathode made of silver oxide and a reducing agent and an electron transport layer doped with an organic metal are applied in the vicinity of the cathode. It is said that the junction between the doped layer and the cathode is improved.

On the other hand, as an electrode of a photoelectric conversion device that is easy to manufacture and suitable for mass production, one using a conductive wire is known. For example, Patent Document 2 below proposes a method of manufacturing a photovoltaic element or the like by joining a mesh electrode body woven with metal wires onto the surface of a photovoltaic body. In Patent Document 2, by wiring a metal wire, the aspect ratio between the thinness and thickness of the wire can be appropriately adjusted as compared with the wiring using printing, lithography, etc., the cost can be reduced, and the mesh can be woven. It is said that wiring can be speeded up.

JP 2011-124468 A JP 2006-165149 A

However, the conventional display device has a complicated structure and it is difficult to reduce the thickness. Among organic EL display devices, a type using a glass substrate does not have flexibility, and a type using a plastic plate has a limit in flexibility.

In a liquid crystal display device using EL illumination as backlight illumination, it is necessary to form the EL light emitting layer as a uniform film, and in addition, an alkali metal is applied to reduce the electrical resistance at the interface between the electrode and the EL light emitting layer. Sometimes it is done.

¡In the active matrix type, there is a possibility of dot dropping. In addition, it is necessary to use an expensive metal such as indium because the TFTs need to be arranged in a matrix.

In the conventional photoelectric conversion device, it was necessary to provide a pair of electrodes across a region to be a pn junction. For this reason, the light irradiation side electrode is required to have good light transmission and low electrical resistance, and the light irradiation side electrode needs to be formed by vapor deposition or plating of an expensive rare metal. Along with that, the process steps were also complicated. Further, the conventional solar cell has no flexibility, and when it is attached to the surface of a curved member, it must be divided and attached.

In the conventional method for manufacturing a photoelectric conversion device using a material-containing liquid containing a hole transport material or an electron transport material, it is difficult to ensure flexibility of the electrode, such as using a substrate to hold the electrode, and sufficient A flexible photoelectric conversion device could not be obtained. In addition, by arranging a large number of p-type organic semiconductors and n-type organic semiconductors between the electrodes to widen the contact interface and ensure the performance of photoelectric conversion, the organic semiconductors arranged between the electrodes are insufficient or non-uniform. If it is arranged, the performance of photoelectric conversion is lowered accordingly.

Furthermore, in a flexible electrode using a conventional conductive wire having conductivity, when a plurality of wires are arranged, the arrangement of the wires such as misalignment, bending, distortion, and deformation often occurs. . When the arrangement of the wires is disturbed, the distance between the electrodes varies, the abundance of the p-type organic semiconductor and the n-type organic semiconductor arranged between the electrodes and the moving distance of the carriers become uneven, and the performance of photoelectric conversion is improved. It was falling.

Therefore, a first object of the present invention is to provide a display device having a simple structure and a small flexibility limit.

A second object of the present invention is to provide an electrode structure for a photoelectric conversion device that does not require light transmittance as an electrode material and a photoelectric conversion device using the same.

A third object of the present invention is to provide a production method capable of easily producing a flexible photoelectric conversion device while ensuring the performance of photoelectric conversion.

In order to achieve the first object, a display device according to the present invention includes a light emitting layer made of an organic EL material, a light emitting layer provided on one side of the light emitting layer, extending in the horizontal direction and spaced in the vertical direction. One line electrode group consisting of conductive wires arranged side by side, and the other line electrode consisting of conductive wire materials provided on the other surface side of the light emitting layer and extending in the vertical direction and arranged at intervals in the horizontal direction A group.

The display device of the present invention includes a light emitting layer made of an organic EL material corresponding to each color, and a conductive layer provided on one surface side in each light emitting layer and extending in the horizontal direction and spaced in the vertical direction. One linear electrode group made of a wire, and the other linear electrode group made of a conductive wire provided on the other surface side in each light emitting layer and extending in the vertical direction and arranged at intervals in the horizontal direction; .

Preferably, in one linear electrode group, a wire for adjusting the arrangement extending in the lateral direction is provided between the conductive wires, and the interval between the conductive wires is maintained by the wire for adjusting the arrangement. In the other wire electrode group, a wire for adjusting the arrangement extending in the vertical direction is provided between the conductive wires, and the distance between the conductive wires is maintained by the wire for adjusting the arrangement.

Preferably, in one line electrode group and the other line electrode group, the gap between the conductive wire and the arrangement adjusting wire is in the same order as the equivalent cross-sectional dimension of the conductive wire.

Preferably, in one linear electrode group, one switching control unit that applies a voltage to an arbitrary conductive wire, and the other switching control unit that applies a voltage to an arbitrary conductive wire in the other linear electrode group, Is provided.

The electrode for a photoelectric conversion device that achieves the second object is an electrode for a photoelectric conversion device provided on both sides of a photoelectric conversion layer that converts light and electric energy, and is provided on a lower surface side of the photoelectric conversion layer. A side electrode part and an upper electrode part provided on the upper surface side of the photoelectric conversion layer, the lower electrode part and the upper electrode part are provided with a plurality of vertical wires and a plurality of horizontal wires, and the vertical wires are mutually It consists of a plurality of conductive wires provided at a distance, a horizontal wire consists of a plurality of insulating wires provided at a distance from each other, and one of the lower electrode portion and the upper electrode portion functions as a p-type electrode, The other of the lower electrode portion and the upper electrode portion functions as an n-type electrode.

Another electrode for a photoelectric conversion device that achieves the second object is an electrode provided on both sides of a photoelectric conversion layer for converting light and electric energy, and is a lower electrode provided on the lower surface side of the photoelectric conversion layer And an upper electrode portion provided on the upper surface side of the photoelectric conversion layer, and a support portion that supports the upper electrode portion with respect to the lower electrode portion so that the lower electrode portion and the upper electrode portion face each other at a predetermined distance The lower electrode portion and the upper electrode portion include a plurality of vertical wires and a plurality of horizontal wires, and the vertical wires are composed of a plurality of conductive wires provided at a distance from each other. It consists of a plurality of insulated wires provided at a distance from each other, and one of the lower electrode portion and the upper electrode portion functions as a p-type electrode, and the other of the lower electrode portion and the upper electrode portion functions as an n-type electrode. It is characterized by that.
At least one of the insulated wires may be provided between the conductive wires constituting the upper electrode portion and the lower electrode portion.

In the photoelectric conversion device that achieves the second object, a p-layer organic semiconductor made of a hole transport material is provided on the P-type electrode, and the n-type electrode is provided on the P-type electrode. Is provided with an n-layer organic semiconductor made of an electron transport material.

In order to achieve the third object, in the method of the present invention, a material-containing liquid containing at least one of a hole transport material and an electron transport material in a solvent is attached to the electrode structure, and the electrode structure In a method for manufacturing a photoelectric conversion device in which an organic semiconductor is formed in a state of being in contact with an electrode structure from a material attached to a body, a plurality of conductive wires are integrated together with a placement adjusting wire that adjusts a spacing between conductive wires. An electrode structure having a plurality of electrode portions and supported by a support wire in a state where the plurality of electrode portions are opposed to each other is prepared using a solvent capable of dissolving the arrangement adjusting wire and not dissolving the support wire. A material-containing liquid is prepared, and the material-containing liquid is brought into contact with the electrode structure to dissolve the arrangement adjusting wire and to attach at least one material to the conductive wire to form an organic semiconductor. To.

In this method of manufacturing a photoelectric conversion device, an electrode structure in which conductive wires are separated from each other at a predetermined interval can be prepared by interposing an arrangement adjusting wire between conductive wires.

In this manufacturing method, a material-containing liquid containing a hole transport material and an electron transport material is prepared and brought into contact with the electrode structure, and the p-type organic semiconductor is formed in a state of being connected to some conductive wires, and n It is preferable to form the type organic semiconductor in a state where it is connected to the other part of the conductive wire.
In this manufacturing method, the material-containing liquid may be attached to one side of the electrode structure.

The photoelectric conversion device of the present invention that achieves the above object is an electrode structure for producing a photoelectric conversion device in which a plurality of conductive wires are integrated with an arrangement adjusting wire, and an arrangement adjusting wire for a solvent for producing a photoelectric conversion device. Is a structure having a higher solubility than the conductive material.

According to the display device of the present invention, one linear electrode group is provided on one surface side of the light emitting layer, and the other linear electrode group is provided on the other surface side of the light emitting layer. Each linear electrode group itself is easily deformable, such as curved, by an external force, unlike a resin molded sheet or film. The structure is also very simple, and there is no need to provide a TFT for each pixel.

According to the electrode for a photoelectric conversion device of the present invention, the electrode provided on the surface of the photoelectric conversion layer on which light is incident has a plurality of gaps for passing light, so that it is not necessary to configure the electrode with a transparent electrode, and transparent There is no need to use rare metals for the electrodes. Therefore, an inexpensive electrode material such as Cu or Al can be used for the electrode for the photoelectric conversion device. Further, since the photoelectric conversion device is formed of a flexible net, the photoelectric conversion device can be attached to a curved surface after being formed in a flat shape. Furthermore, since light can be taken in from both surfaces of the photoelectric conversion layer, improvement in conversion efficiency can be expected.

According to the method for manufacturing a photoelectric conversion device of the present invention, since an electrode structure in which a plurality of conductive wires are integrally connected together with a wire for arrangement adjustment is used, even a flexible conductive wire can be easily arranged. Moreover, while the arrangement | positioning space | interval of a some conductive wire can be easily adjusted with the arrangement | positioning adjustment wire, the state can be stably hold | maintained at the time of manufacture. For this reason, it is possible to prevent variation in the arrangement interval of the plurality of conductive wires and to ensure the performance of photoelectric conversion.

Then, since the arrangement adjusting wire is dissolved by bringing the material containing liquid into contact with the electrode structure, in the obtained photoelectric conversion device, the hole transport material of the material containing liquid is disposed at the portion where the arrangement adjusting wire is arranged. And an electron transport material can be arranged. Therefore, many organic semiconductors can be uniformly arranged between the conductive wires, and the performance of photoelectric conversion can be ensured.
Therefore, it is possible to easily manufacture a photoelectric conversion device having flexibility while ensuring the performance of photoelectric conversion.

It is a figure which shows typically the display apparatus which concerns on 1st Embodiment of the display apparatus of this invention. It is a figure which shows typically the cross section of the display part of the display apparatus shown in FIG. (A) is a figure which shows typically one linear electrode group of the display part shown in FIG. 2, (B) is a figure which shows typically the other linear electrode group of the display part shown in FIG. is there. It is a figure which shows typically the cross section of the display part of the display apparatus which concerns on 2nd Embodiment of this invention. FIG. 5 is a schematic perspective view of a part of one and the other linear electrode group in the display unit shown in FIG. 4. It is sectional drawing of the photoelectric conversion device which concerns on 3rd Embodiment of this invention. It is a perspective view of the electrode structure in the photoelectric conversion device shown in FIG. It is an enlarged view of the area | region of the code | symbol A shown in FIG. It is sectional drawing of the photoelectric conversion device which concerns on the modification of 3rd Embodiment of this invention. It is a perspective view which shows typically the electrode structure used with the manufacturing method of the photoelectric conversion device in 4th Embodiment of this invention. (A) And (b) is sectional drawing for demonstrating a part of manufacturing process of the photoelectric conversion device in 4th Embodiment of this invention. It is sectional drawing of the photoelectric conversion device which concerns on 5th Embodiment of this invention. It is a perspective view of the electrode structure in the photoelectric conversion device shown in FIG. It is an enlarged view of the area | region shown with the code | symbol A in FIG. It is sectional drawing of another photoelectric conversion device which concerns on 5th Embodiment of this invention.

Hereinafter, some embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
FIG. 1 is a diagram schematically showing a display device according to a first embodiment of the present invention. 2 is a diagram schematically showing a cross section of the display unit of the display device shown in FIG. 1, and FIG. 3A shows one of the linear electrode groups in the display unit shown in FIG. FIG. 5 is a diagram schematically showing the other linear electrode group in the display unit.

The display device 1 according to the first embodiment of the present invention is an example of a photoelectric conversion device including a display unit 2 and a control unit 3 as shown in FIG. As shown in FIG. 2, the display unit 2 includes a light emitting layer 61 made of an organic EL material, one linear electrode group 62 provided on one surface side of the light emitting layer 61, and the other surface in the light emitting layer 61. And the other linear electrode group 63 provided above. In the display unit 2, as shown in FIG. 2, protective layers may be provided on the upper and lower surfaces of the light emitting layer 61.

The light emitting layer 61 is formed in a layer shape with various organic EL materials. One linear electrode group 62 and the other linear electrode group 63 exist on different surfaces and do not cross each other, that is, in a twisted positional relationship.

One line electrode group 62 is provided on one surface side of the light emitting layer 61. One line electrode group 62 is formed by arranging conductive wires 62a extending in the horizontal direction at intervals in the vertical direction. In one of the linear electrode groups 62, a laterally extending arrangement adjusting wire 62b may be disposed between the conductive wires 62a, 62a extending in the lateral direction, and the wires extending in the lateral direction may be disposed. 62a and 62b may be knitted by the wire 62c for arrangement adjustment extended in the vertical direction. That is, the conductive wire 62a extending in the horizontal direction and the arrangement adjusting wire 62b extending in the horizontal direction are arranged at intervals in the vertical direction, and these are arranged for vertical adjustment. One filament electrode group 62 may be constituted by being knitted in a lattice shape by the wire rod 62b.

The other filament electrode group 63 is provided on the other surface side of the light emitting layer 61. One line electrode group 63 is formed by arranging conductive wires 63a extending in the vertical direction at intervals in the horizontal direction. In the other wire electrode group 63, a wire 63b for adjusting the arrangement extending in the vertical direction may be arranged between the conductive wires 63a, 63a extending in the vertical direction, and these wires extending in the vertical direction. 63a and 63b may be knitted by the wire 63c for arrangement adjustment extended in the horizontal direction. That is, the conductive wire 63a extending in the vertical direction and the arrangement adjusting wire 63b extending in the vertical direction are arranged at intervals in the horizontal direction, and these are arranged for horizontal adjustment. The other filament electrode group 63 may be configured by being knitted in a lattice shape by the wire 63b.

The conductive wire rods 62a and 63a are made of a linear member having a circular cross section, an elliptical cross section, or a flat cross section, and may be a monofilament or a multifilament. The filament may be a conductive wire made of metal or the like. Moreover, the metal may be plated on the outer periphery of the monofilament or multifilament, and the plating layer may be formed on the outer periphery of the filament. As the metal, copper having a low resistivity is preferable, but another metal may be used, and stainless steel may be used.

The wire rods 62b, 62c, 63b, and 63c for adjusting the arrangement are made of linear members having a circular cross section, an elliptical cross section, and a flat cross section, and may be monofilaments or multifilaments.

The material of the wires 62b, 62c, 63b, 63c for adjusting the arrangement is preferably an insulating fiber. This is because the liquid crystal is lit in dots. However, when the wires 62a and 63a are not misaligned in a state where various organic EL materials are cured, a material that dissolves with an organic solvent or the like may be used as the material for the arrangement adjusting wires 62b, 62c, 63b, and 63c. Good. In that case, the insulating fiber is not necessarily required. That is, the materials of the alignment adjusting wire materials 62b, 62c, 63b, and 63c are included in the coating agent when the organic EL material is applied to the one linear electrode group 62 and the other linear electrode group 63 and cured. It may be dissolved by an organic solvent.

In one line electrode group 62 and the other line electrode group 63, the gaps between the conductive wire materials 62a and 63a and the arrangement adjusting wire materials 62b and 63b are in the same order as the equivalent cross-sectional dimensions of the conductive wire materials 62a and 63a. May be.

For example, the conductive wires 62a and 63a and the arrangement adjusting wires 62b and 63b have a wire diameter of 10 to 25 μm, and the gap between the conductive wires 62a and 63a and the arrangement adjusting wires 62b and 63b is 10 mm. ~ 25 μm. The gap between the alignment adjusting wires 62c and 63b is 10 to 25 μm. These numbers are values before weaving each wire. In a state where each wire is knitted and soaked with the organic EL material, the thickness of one linear electrode group 62 is 20 to 30 μm, and the thickness of the other linear electrode group 63 is 20 to 30 μm. The shortest distance between one filament electrode group 62 and the other filament electrode group 63 is 10 to 30 μm, particularly 10 to 20 μm. The thickness of the light emitting layer 61 is, for example, 60 to 90 μm.

In the embodiment of the present invention, the string-like thickness of each wire is approximately the same as the size of the mesh formed by these wires, or has the same order of dimensions. Therefore, the gaps between the wires are maintained by the arrangement- positive wires 62b, 62c, 63b, and 63c. The wire diameter of each wire is preferably uniform, but may be within a predetermined range, for example, 80% to 120% with respect to the average diameter. Thereby, the space | interval of the conductive wire materials 62a and the conductive wire materials 63a is kept constant.

The alignment adjusting wires 62b, 62c, 63b, and 63c are provided to maintain the interval between the conductive wires 62a and the interval between the conductive wires 63a until the organic EL material is cured. Therefore, when the organic EL material is cured by applying an organic EL material to one of the linear electrode group 62 and the other linear electrode group 63 to form the light emitting layer 61, the thickness of the light emitting layer 61 is increased. The conductive wire members 62a and 63a of the first electrode group 62 and the other electrode group 63 are held. Note that the arrangement adjusting wires 62b, 62c, 63b, and 63c do not have to be completely dissolved by the organic solvent, and may remain partially undissolved.

As the alignment adjusting wires 62b, 62c, 63b, and 63c, for example, acrylic fibers or vinyl fibers can be used. In this case, the coating agent contains an organic solvent such as toluene or acetic acid. Just do it. The organic solvent can be appropriately selected according to the organic EL material, the curing agent, and the like.

As shown by a dotted line in FIG. 2, in order to maintain the distance between one of the linear electrode groups 62 and the other of the linear electrode groups 63, a support member 64 for maintaining a distance may be provided. The support member 64 is made of a non-conductive, that is, insulating wire, and is made of a fiber that hardly melts depending on an organic solvent such as polyethylene terephthalate. This is different from the arrangement adjusting wires 62b, 62c, 63b, and 63c, in which an application agent containing an organic EL material is applied to or impregnated into one of the linear electrode groups 62 and the other of the linear electrode groups 63. This is to prevent melting.

The control unit 3 includes one switching control unit 15a and the other switching control unit 15b. The voltage supply unit 16 is connected to the input side of the one switching control unit 15a and the other switching control unit 15b, and the respective conductive properties of the one line electrode group 62 and the other line electrode group 63 are connected to the output side. The ends of the wires 62a and 63a are connected.

In the display device 1 according to the first embodiment of the present invention, the conductive wire material 62a extending laterally on one surface side of the light emitting layer 61 is arranged in the vertical direction, and on the other surface side of the light emitting layer 61. Conductive wire 63a extending vertically is arranged side by side in the horizontal direction.

Here, the conductive wire 62a being provided on one surface side of the light emitting layer 61 means that the conductive wire 62a is provided so as to be embedded in the light emitting layer 61 on the upper surface side of the light emitting layer 61 as shown in FIG. In addition, it may be a case where the light emitting layer 61 partially protrudes from the upper surface. The conductive wire 63a is provided on the other surface side of the light emitting layer 61 as well as the case where the conductive wire 63a is provided so as to be embedded in the light emitting layer 61 on the lower surface side of the light emitting layer 61 as shown in FIG. Further, it may be a case where the light emitting layer 61 partially protrudes from the lower surface. In any case, a transparent protective layer 19 that transmits light from the light emitting layer 61 as much as possible is provided on either or both sides of the light emitting layer 61. When the light emitting layer 61 partially protrudes from the upper and lower surfaces, the light emitting layer 61 is covered with the protective layer 19 together with the upper and lower surfaces of the light emitting layer 61.

In the display device 1 according to the first embodiment of the present invention, one of the line electrode groups 62 includes a conductive wire material 62a and non-conductive wire materials 62b and 62c arranged in a lattice shape, and the other wire electrode The strip electrode group 63 has a configuration in which vertically extending conductive wire 63a and non-conductive wire 63b, 63b are arranged in a grid pattern. Therefore, the wire 62a and the wire 62b are arranged side by side so as to intersect with each other across the central axis of the light emitting layer 61 in plan view. In addition, when the wire diameter of each wire is very small, the wire extending in the lateral direction may be referred to as weft and the wire extending in the vertical direction may be referred to as warp.

In such a linear electrode group 62 and the other linear electrode group 63, the conductive wire materials 62a and 63a intersect each other in plan view, and the linear electrode groups 62 and 63 are formed by non-conductive wire materials 62b and 63b. Since they are arranged alternately, they can be referred to as alternately arranged planar electrodes. Note that the number of non-conductive wires 62b and 63b is not limited to one and may be a plurality.

The display unit 2 of the display device 1 according to the embodiment of the present invention has the alternately arranged planar electrodes as described above. Therefore, by turning on each switch of one switching control unit 15a, the first voltage is applied to the conductive wire material 62a connected to the turned on switch. By turning on each switch of the other switching control unit 15b, the second voltage is applied to the conductive wire 63a connected to the turned-on switch. Therefore, a constant voltage can be applied between the conductive wire 62a specified in one of the linear electrode groups 62 and the conductive wire 63a specified in the other of the linear electrode groups 63. The constant voltage is a difference between the first voltage and the second voltage, and either one of the first voltage and the second voltage may be 0V.

Thus, since it is not necessary to provide a switching TFT for each pixel in the display unit 2, the display unit 1 itself does not have a complicated laminated structure. In the embodiment of the present invention, each of the wire members 62a, 62b, 62c, 63a, 63b, 63c extending in the vertical direction and the horizontal direction and the light emitting layer 61 are used. In addition, since the ITO film is not formed on the thin film or sheet, the ITO film does not peel from the film or sheet. In addition, the bending of the film or sheet itself is not hindered. Therefore, the display unit 2 of the display device 1 according to the first embodiment of the present invention can be deformed such as curved.

In the first embodiment of the present invention, the conductive wire rods 62a and 63a and the wire rods 62b, 62c, 63b, and 63c for arrangement adjustment exist on one surface side and the other surface side of the light emitting layer 61. These wires improve contrast and produce a so-called smoke effect. Therefore, there is no need to provide a light gray film called a smoke film.

[Second Embodiment]
A second embodiment of the present invention will be described. FIG. 4 is a diagram schematically showing a cross section of a display unit of a display device according to a second embodiment of the present invention, and FIG. 5 is a schematic diagram showing a part of one and the other linear electrode groups in the display unit shown in FIG. FIG. The display unit 2 of the display device according to the second embodiment of the present invention has the following structure. That is, the light emitting layers 21, 31, 41 emitting different colors are laminated, and one line electrode group 22, 32, 42 is provided on one surface side of each light emitting layer 21, 31, 41, On the other surface side of each light emitting layer 21, 31, 41, the other linear electrode groups 23, 33, 43 are provided.

Each line electrode group 22, 32, 42 has the same configuration as that shown in FIG. 2, and includes conductive wires 22a, 32a, 42a extending in the horizontal direction and arrangement adjusting wires 22b extending in the horizontal direction. 32b and 42b are knitted by arrangement adjusting wire rods 22c, 32c and 42c extending in the vertical direction, and are formed in a net shape.

The other configuration of the other line electrode groups 23, 33, 43 is the same as that shown in FIG. 2, and the conductive wire members 23a, 33a, 43a extending in the vertical direction and the wire rods 23b, 33b for adjusting the arrangement extending in the vertical direction are provided. 43b is knitted by a wire 23c, 33c, 43c for adjusting the arrangement extending in the lateral direction, and is formed in a net shape.

As in the first embodiment, the conductive wire rods 22a, 32a, and 42a are connected to the respective switches of the one switching control unit 15a, and the other wire electrode group. Of the wires 23, 33 and 43, the conductive wires 23a, 33a and 43a are connected to the respective switches in the other switching control unit 15b.

Thereby, in each light emitting layer 21,31,41, it exists in the specific conductive wire material 22a, 32a, 42a in one linear electrode group 22,32,42, and the other linear electrode group 23,33,43. A predetermined voltage is applied between the specific conductive wires 23a, 33a, 43a.

As in the first embodiment, in each of the light emitting layers 21, 31, 41, one linear electrode group 22, 32, 42 and the other linear electrode group 23, 33, 43 are linearly supported in a vertical direction. , 34, 44. Thereby, the space | interval of one filament electrode group 22,32,42 and the other filament electrode group 23,33,43 can be made constant. As a result, in each of the light emitting layers 21, 31, 41, the specific conductive wire rods 22 a, 32 a, 42 a in the one line electrode group 22, 32, 42 and the other line electrode groups 23, 33, 43 are present. A voltage within a certain range can be applied between the specific conductive wire materials 23a, 33a, and 43a, and unevenness of light emission can be prevented.

In the second embodiment, the light emitting layer 21, the light emitting layer 31, and the light emitting layer 41 emit light of different wavelengths. For example, three color lights of R, B, and G are generated in three light emitting layers. As shown in FIG. 5, one pixel 54 is formed by a configuration in which conductive wire materials 23 a, 33 a, and 43 a are horizontally arranged by the light emitting layers 21, 31, and 41.

In plan view, a crossing region of the conductive wire 22a and the conductive wire 23a provided in the first light emitting layer 21, a crossing region of the conductive wire 32a and the conductive wire 33a provided in the second light emitting layer 31, and a third The conductive wire 42a and the intersecting region of the conductive wire 43a provided in the light emitting layer 41 are arranged so as not to overlap each other. Specifically, in the 1st light emitting layer 21, the space | interval of conductive wire 22a and the space | interval of conductive wire 23a are adjusted. The same applies to the second light emitting layer 31 and the third light emitting layer 41.

In the light emitting layer 21, two arrangement adjusting wire members 23 b are interposed between the conductive wire members 23 a of the other filament electrode group 23. In the light emitting layer 31, two arrangement adjusting wire members 33 b are interposed between the conductive wire members 33 a of the other filament electrode group 33. In the light emitting layer 41, two arrangement adjusting wire rods 43 b are interposed between the conductive wire rods 43 a of the other filament electrode group 43. The number of wires for adjusting the arrangement is not limited to two, and may be four, six, or any other number.

As in the case of the first embodiment, the wire for adjusting the arrangement may be dissolved by a solvent or the like, but the supporting members 24, 34, 44 for maintaining the distance are not dissolved, and one of the linear electrode groups 22, The distance between 32 and 42 and the other linear electrode group 23, 33, 43 is maintained. Thereby, when the display part 2 is curved etc., the space | interval of the conductive wire materials of one filament electrode group 22,32,41 and the other filament electrode group 23,33,43 is maintained.

As described above, the regions where one of the linear electrode groups 22, 32, 42 and the conductive linear members 23a, 33a, 43 in the other linear electrode groups 23, 33, 43 intersect are arranged side by side in a plan view. One pixel 54 is formed. The intersecting regions may be arranged so as to be arranged at the vertices of the triangle in plan view, arranged so as to be arranged at the vertices of the L shape, or arranged at the vertices of other shapes. You may line up.

Thus, the conductive wire members 22a, 32a, and 42a do not overlap with each other in plan view, and the conductive wire members 23a, 33a, and 43a do not overlap with each other in plan view.

One pixel is formed by three regions where the conductive wire members 22a, 32a, 42a of one of the line electrode groups 22, 32, 42 intersect the conductive wire members 23a, 33a, 43a of the other line electrode group 23, 33, 43. Composed. Since each light emitting layer 21, 31 and 41 is laminated | stacked up and down, the conductive wire material by which the light generated by the voltage applied to each crossing area | region in each light emitting layer 21, 31, and 41 is arrange | positioned at another area | region To prevent interruption as much as possible.

Incidentally, a gap 51 is provided between the light emitting layer 21 and the light emitting layer 31, and a gap 52 is provided between the light emitting layer 31 and the light emitting layer 41. The gaps 51 and 52 can be used as insulating layers so that no voltage is generated between the conductive wires with other light emitting layers.

As described above, in the first and second embodiments of the present invention, alternately arranged plane electrodes can be stacked and crossed, and a predetermined voltage can be applied to the intersecting region in plan view. Each of the one line electrode group and the other line electrode group is configured by a fine yarn cloth by weaving a conductive wire extending in one direction with an insulating wire. Therefore, one line electrode group and the other line electrode group can be arranged on the opposite side by a thread-like support member, and one or a plurality of organic EL materials can be applied or immersed to form a light emitting layer. In that case, a hardening | curing agent, a solvent, a catalyst, etc. are mixed so that it may adapt to organic EL material. Although the formation of the light emitting layer in the first and second embodiments of the present invention is not described in detail, various known organic EL materials can be used, and those described later are used. Is also possible. As a method for immersing and curing the organic EL material, a known technique such as coating by an ink jet method, a dipping impregnation method, or a wetting method using a roller can be used, and a method described later can also be used. *

Further, as described above, one line electrode group and the other line electrode group are not limited to a rectangular mesh such as a square in plan view, but may be a rhombus mesh.

[Third Embodiment]
Next, a third embodiment of the present invention will be described in detail. In particular, a photoelectric conversion device will be described assuming a solar cell as a device that converts light into electric energy, but it can be similarly applied to devices that convert electric energy into light energy such as a display device. it can.

FIG. 6 is a cross-sectional view of the photoelectric conversion device 1 according to the third embodiment of the present invention, and FIG. 7 is a perspective view of the photoelectric conversion device 1.

The photoelectric conversion device 1 is composed of an electrode 12 and a photoelectric conversion layer 13. In FIG. 7, the display of the photoelectric conversion layer 13 is omitted.

As shown in FIG. 7, the electrode 12 includes a lower electrode part 120 and an upper electrode part 220 provided to face the lower electrode part 120 at a predetermined distance.

The lower electrode portion 120 includes a plurality of vertical wires 120A and a plurality of horizontal wires 120B. The vertical wire 120A and the horizontal wire 120B are woven so as to intersect each other. That is, the lower electrode portion 120 is formed in a plain weave net shape.

As the vertical wire 120A, two types of wires, specifically, the first conductive wire 121 and the first insulating wire 122 are used. As shown in FIG. 7, the first conductive wire 121 and the first insulating wire 122 are alternately arranged. The first conductive wire 121 and the first insulating wire 122 are juxtaposed at a predetermined interval so as not to contact each other.

As the first conductive wire 121, for example, a metal wire such as a copper wire or a stainless steel wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used. One end 121E of each first conductive wire 121 is connected to the first bus bar 121A as shown in FIG.

The first insulating wire 122 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.

The second insulating wire is used as the horizontal wire 12B. Similar to the first insulating wire 122, the second insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.

The upper electrode section 220 includes a plurality of vertical wires 220A and a plurality of horizontal wires 220B. The vertical wire 220A and the horizontal wire 220B are woven so as to intersect each other. That is, the upper electrode portion 220 is formed in a plain weave net shape.

As the vertical wire 220A, two types of wires, specifically, the second conductive wire 221 and the third insulating wire 222 are used. As shown in FIG. 7, the second conductive wire 221 and the third insulating wire 222 are alternately arranged. The second conductive wire 221 and the third insulating wire 222 are juxtaposed at a predetermined interval so as not to contact each other.

As the second conductive wire 221, for example, a metal wire such as a copper wire or a stainless steel wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used. One end 221E of each second conductive wire 221 is connected to the second bus bar 221A as shown in FIG.

The third insulating wire 222 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.

A fourth insulating wire is used as the horizontal wire 220B. Similar to the third insulating wire 222, the fourth insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.

The first conductive wire 121, the second conductive wire 221, the first insulating wire 122, the third insulating wire 222, etc. are set to a thickness of about 20 μm to 30 μm.

Next, the photoelectric conversion layer 13 will be described. FIG. 8 is a schematic enlarged view of a circle A region in FIG. The photoelectric conversion layer 13 is provided on one electrode, that is, the lower electrode portion 120, and the p-layer organic semiconductor 13A serving as a hole transport material, and on the other electrode, that is, the upper electrode portion 220, and is transported by electrons. And n-layer organic semiconductor 13B as a material. In addition, as shown in FIG. 8, the organic semiconductor 13B is provided on the organic semiconductor 13A. Therefore, the lower electrode part 120 functions as a p-type electrode, and the upper electrode part 220 functions as an n-type electrode. The p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B form a pn junction.

Next, materials of the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B will be described. The p-layer organic semiconductor 13A is formed of a hole transport material. As a hole transport material, in addition to triphenylamine (TAPC) represented by the chemical formula (1), TPD and other aromatic amines which are dimers of triphenylamine represented by the chemical formula (2), the chemical formula (3) Α-NPD represented by formula (4), (DTP) DPPD represented by formula (4), m-MTDATA represented by formula (5), HTM1 represented by formula (6), 2-TNATA represented by formula (7), TPTE1 represented by chemical formula (8), TCTA represented by chemical formula (9), NTPA represented by chemical formula (10), spiro-TAD represented by chemical formula (11), TFREL represented by chemical formula (12), etc. are used. .

 

 

 

 

 

 

 

 

 

 

 

 
 

The n-layer organic semiconductor 13B is formed of an electron transport material. Examples of the electron transport material include Alq ₃ represented by the chemical formula (13), BCP represented by the chemical formula (14), an oxadiazole derivative represented by the chemical formula (15), and an oxadiazole dimer represented by the chemical formula (16). , Starburst oxadiazole represented by the chemical formula (17), triazole derivative represented by the chemical formula (18), phenylquinoxaline derivative represented by the chemical formula (19), silole derivative represented by the chemical formula (20), and the like.

 

 

 

 

 

 

 

 

A method for manufacturing the photoelectric conversion device 1 shown in FIG. First, the first conductive wire 121, the first insulated wire 122, and the second insulated wire are prepared and plain weave to produce the lower electrode portion 120. Similarly, the upper electrode part 220 is produced. Thereafter, a hole transport material to be the p-layer organic semiconductor 13A is applied to a predetermined portion, for example, one electrode, that is, the lower electrode portion 120 by, for example, an ink jet printer.

Next, an electron transport material to be the n-layer organic semiconductor 13B is applied on the p-layer. For the application, the same printing technique by an ink jet printer as in the case of the p-layer organic semiconductor 13A may be used.

Thereby, a pn junction is formed by the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B. The n-layer organic semiconductor 13B may be applied, and then the p-layer organic semiconductor 13A may be applied.

Thereafter, the lower electrode portion 120 is overlaid on the n layer. Thereby, the photoelectric conversion device 1 is produced. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 6 is manufactured.

In the photoelectric conversion device 1 configured as described above, for example, when light is incident on the photoelectric conversion layer 13 from the upper electrode portion 220 side, the light L and the second conductive wire 221 constituting the upper electrode portion 220 It passes between the three insulated wires 222 and enters the inner region from the upper surface of the photoelectric conversion layer 13. As shown in FIG. 8, the light L ′ can enter the inner region also from the lower surface of the photoelectric conversion layer 13. The lower electrode portion 120 and the upper electrode portion 220 are made of a material that allows light to pass through a plurality of gaps S for light passage, that is, regions of the gaps S.

According to the present invention, since the electrode provided on the surface of the photoelectric conversion layer 13 on which light is incident is configured to have a plurality of gaps S for passing light, it is not necessary to configure the electrode with a transparent electrode, and the transparent It is not necessary to use a rare metal for the electrode as a material. Therefore, Cu, Al, etc. can be used for the electrode 12 for photoelectric conversion devices. Since the photoelectric conversion device 1 is formed of a flexible net, the electrode 12 can be attached to a curved surface after being formed in a flat shape. Since the upper electrode portion 220 is formed in a net shape with a wire rod functioning as an electrode, a member such as a bus bar is brought into contact with the wire rod by crimping or welding a member such as a bus bar to the end portion of the net. Therefore, the manufacturing process for extracting electricity is facilitated. Furthermore, since light can be taken in from both surfaces of the photoelectric conversion layer 13, an improvement in conversion efficiency can be expected.

The third embodiment described above can be implemented with appropriate modifications within the scope of the present invention. In the above configuration, a configuration in which one first insulating wire 122 and one third insulating wire 222 are provided between the first conductive wires 121 and between the second conductive wires 221 has been described. As shown in FIG. The photoelectric conversion device may be configured by omitting the first insulating wire 122 and the third insulating wire 222 as shown in FIG. 9B.

[Fourth Embodiment]
Next, a method for manufacturing a photoelectric conversion device according to the fourth embodiment will be described. Below, the example about the solar cell which converts light into electrical energy is demonstrated as the photoelectric conversion device 1, However, It applies similarly, even if what converts electrical energy into light like an EL element, a display apparatus, etc. it can.

10 and 11 are diagrams for explaining a method of manufacturing a photoelectric conversion device according to the fourth embodiment. In 4th Embodiment, the photoelectric conversion device 20 is manufactured using the electrode structure 22 as shown in FIG.

The photoelectric conversion device 1 to be manufactured includes, for example, a photoelectric conversion layer 13 having a p-type organic semiconductor 13A made of a hole transport material and an n-type organic semiconductor 13B made of an electron transport material, as shown in FIG. A first conductive wire 121 as a p-type electrode connected to the organic semiconductor 13A, and a second conductive wire 122 as an n-type electrode connected to the n-type organic semiconductor 13B. A protective layer is laminated and coated on the surface of the photoelectric conversion layer 13. Here, the photoelectric conversion device 1 is disposed along the surface of the insulating substrate 11.

At least one of the first conductive wire 121 and the second conductive wire 122, here both, is composed of a plurality of conductive wires 120 arranged side by side in substantially the same direction so as not to contact each other. A horizontal wire 12B made of an insulating wire is arranged in a direction crossing these conductive wires 120. A part of the plurality of conductive wires 120 is the first conductive wire 121 and the other conductive wire 120 is the second conductive wire 122, which are alternately arranged.
The plurality of conductive wire rods 120 constituting the first conductive wire rod 121 and the plurality of conductive wire rods 120 constituting the second conductive wire rod 122 are provided in substantially the same number, and bus bars 7 as wiring portions as shown in FIG. Can be connected to various circuits via the bus bar 7.

Each conductive wire 120 uses a flexible wire such as a metal wire such as a copper wire or a stainless steel wire, a synthetic fiber such as a resin, or a metal-plated fiber obtained by performing metal plating on the surface of various fibers such as a natural fiber. It is good to do. In the case of a metal-plated fiber, the core fiber may be composed of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, vinyl resin, or the like.

The thickness of the plurality of conductive wires 120 may be different from each other, but it is preferable to use wires having the same thickness. Although not particularly limited, as an example, one having a wire diameter of 20 to 30 μm may be used.

Each horizontal wire 12B is made of an insulating wire, and it is preferable to use a flexible wire such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin. A wire having the same thickness as that of the conductive wire 120 may be used as the horizontal wire 12B. By arranging the horizontal wire 12B, a continuous wire in the vertical direction and the horizontal direction is arranged, and the surface strength of the photoelectric conversion device 1 is improved.

The photoelectric conversion layer 13 includes a p-type organic semiconductor 13A connected to the first conductive wire 121 and an n-type organic semiconductor 13B connected to the second conductive wire 122. The p-type organic semiconductor 13A and the n-type organic semiconductor 13B are bonded at the contact interface to form a pn junction. It is preferable that the photoelectric conversion layer 13 is rich in flexibility.

The p-type organic semiconductor 13A is made of a hole transport material. Examples of the hole transport material include aromatic amine, thiophene, phenylene-vinylene, thienylene-vinylene, carbazole, vinylcarbazole, pyrrole, acetylene, phthalocyanine, acene, porphyrin, derivatives, complexes, oligomers, and polymers thereof. Among these, known organic compounds having electron acceptability that can be used as organic semiconductors can be used.

The n-type organic semiconductor 13B is made of an electron transport material. Examples of the electron transport material include silole, fullerene, carbon nanotube, perylene, naphthalene, pyridine, phthalocyanine, quinoline, oxadiazole, triazole, distyrylarylene, derivatives, complexes, oligomers, and polymers thereof. Any known organic compound having an electron donating property that can be used as an organic semiconductor can be used.

These p-type organic semiconductor 13A and n-type organic semiconductor 13B can be selected by combining those having the highest possible photoelectric conversion efficiency. The thickness of the photoelectric conversion layer 13 is not particularly limited, but may be 1.2 to 2.0 times the wire diameter of the conductive wire 120, for example.

In such a photoelectric conversion device 1, since the first conductive wire 121, the second conductive wire 122, and the photoelectric conversion layer 13 have flexibility, the photoelectric conversion device 1 has sufficient flexibility. Therefore, it can arrange | position freely along the surface which consists of a plane of the base material 11 or a curved surface.

In order to manufacture the photoelectric conversion device 1 in the present embodiment, an electrode preparation process for preparing the electrode structure 22 and a material-containing liquid 130 adjustment process for preparing a material-containing liquid 130 containing a hole transport material or an electron transport material. And a material attaching step for attaching a hole transport material or an electron transport material to the electrode structure 22 and a semiconductor forming step for forming an organic semiconductor.

In the preparation step, as shown in FIG. 10, a plurality of electrode portions 230 in which a plurality of conductive wire rods 120 are integrated with the arrangement adjusting wire rod 15 are provided, and the support wire rods 320 are arranged in a state where the plurality of electrode portions 230 are opposed to each other. A supported electrode structure 22 is prepared. The electrode structure 22 can be formed as a double raschel woven fabric. The electrode structure 22 may be prepared in advance.

Each electrode section 230 includes a plurality of vertical wires 12A made up of a plurality of conductive wires 120 and arrangement adjusting wires 15, and a plurality of horizontal wires 12B intersecting the vertical wires 12A. It intersects with the conductive wire 120 and the arrangement adjusting wire 15 and is arranged so as to intersect with the conductive wire 120 and the arrangement adjusting wire 15 up and down at predetermined intervals. In this embodiment, the conductive wire 120 of one electrode part 230 is the first conductive wire 121 and the conductive wire 120 of the other electrode part 230 is the second conductive wire 122.

The conductive wire 120 and the arrangement adjusting wire 15 of the vertical wire 12A are alternately arranged in substantially the same direction. The number of the conductive wires 120 and the number of the arrangement adjusting wires 15 that are alternately arranged may be repeated by arranging one or both of them in plurality, but here, each of them is repeatedly arranged one by one. The number or the like of the arrangement adjusting wires 15 arranged between the conductive wires 120 is preferably set according to the arrangement interval of the first conductive wires 121 and the second conductive wires 122 obtained after manufacture. It is preferable that the interval between the adjacent vertical wire rods 12A and the interval between the conductive wire rods 120 are adjusted to a suitably set range.

The conductive wire 120 of the vertical wire 12A is as described above, but the hole transport material contained in the material-containing liquid 130 is attached to a part of the conductive wire 120 that becomes the first conductive wire 121 of the vertical wire 12A. The material may be selected so as to be easy and surface treatment may be performed. In addition, a material may be selected or a surface treatment may be performed on the other conductive wire 120 that becomes the second conductive wire 122 so that the electron transport material contained in the material-containing liquid 130 is easily attached. .

For example, by selecting the surface material of the conductive wire 120 constituting the first conductive wire 121 and the surface material of the conductive wire 120 constituting the second conductive wire 122 in a combination that causes a potential difference such as tin and copper. The p-type organic semiconductor 13A or the n-type organic semiconductor 13B may be controlled to be generated as crystals or molecules on the surface of each conductive wire 120.

The arrangement adjusting wire 15 of the vertical wire 12A is made of a material that can be dissolved by the material-containing liquid 130 described later, and can be dissolved by a solvent selected according to the hole transport material and the electron transport material. The arrangement adjusting wire 15 may be an insulating resin wire. Although not particularly limited, for example, a wire such as an acrylic resin or a vinyl resin may be used.
If the thickness of the arrangement adjusting wire 15 is excessively large, the solubility decreases or the interval between the conductive wires 120 is widened. On the other hand, if the thickness is excessively thin, it is difficult to secure the interval between the conductive wires 120. The wire diameter of the conductive wire 120 may be 0.5 to 1.0 times.

The horizontal wire 12B may be simply arranged in a direction intersecting with the conductive wire 120 and the arrangement adjusting wire 15, but here, the horizontal wire 12B is arranged so as to intersect with the conductive wire 120 and the arrangement adjusting wire 15 up and down at predetermined intervals. ing.
The horizontal wire 12B is made of an insulating wire different from the arrangement adjusting wire 15, and is dissolved in a material-containing liquid 130 described later, that is, a solvent used according to the hole transport material and the electron transport material used. The material is made of a material that is lower than the arrangement adjusting wire 15. Although not particularly limited, for example, a wire such as polyester such as PET may be used.

By integrating the vertical wire 12A together with such a horizontal wire 12B, the conductive wire 120 can be stably separated and held with the arrangement adjusting wire 15 interposed between the conductive wires 120. They can be stably arranged separated from each other at a predetermined interval.

The support wire 320 is arranged in a direction intersecting with the vertical wire 12 </ b> A of each electrode part 230, and is further arranged so as to cross up and down so as to be bridged between the conductive wires 120 of each electrode part 230. The support wire 320 is made of an insulating wire different from the arrangement adjusting wire 15, and is made of a material having low solubility by the solvent of the material-containing liquid 130. Although not particularly limited, for example, a wire such as polyester such as PET may be used.

The electrode structure 22 can be formed as a woven fabric knitted with double raschel by providing a structure in which the plurality of electrode portions 230 are supported by the support wire 320. As a result, the plurality of electrode portions 230 are arranged to face each other at a predetermined distance, and the conductive wire material 120 constituting the first conductive wire material 121 and the conductive wire material 120 constituting the second conductive wire material 122 are substantially in the same direction and close to each other. It arrange | positions so that it may oppose.

In the material-containing liquid 130 adjustment step, the material-containing liquid 130 is prepared by containing at least one of the hole transport material and the electron transport material as described above in the solvent. It is necessary to prepare the material-containing liquid 130 according to the material adhesion process. For example, when the p-type organic semiconductor 13A and the n-type organic semiconductor 13B are formed by bringing the material-containing liquid 130 into contact with the first conductive wire 121 and the second conductive wire 122 separately, a hole transport material is included. The material-containing liquid 130 to be prepared and the material-containing liquid 130 containing the electron transport material are prepared separately. Here, the material-containing liquid 130 is prepared by including both transport materials in a solvent.

The hole transport material may be a precursor of an organic compound having an electron acceptability that can be used as an organic semiconductor in addition to the above-described materials, and the electron transport material may be an organic semiconductor other than the above-described materials. The precursor of the organic compound which has the electron-donating property which can be used as these may be sufficient. In the case of using a precursor, a desired compound may be generated by appropriately reacting in the subsequent steps.

The solvent for producing a photoelectric conversion device used for the material-containing liquid 130 may be a solvent in which a hole transport material or an electron transport material is dispersed. However, a solvent that can be dissolved is suitable, and a solvent having volatility. May be. This solvent needs to be able to dissolve the wire 15 for adjusting the arrangement of the electrode structure 22 and preferably not to dissolve the horizontal wire 12B.

In this material-containing liquid 130 preparation step, a material-containing liquid 130 is prepared by selecting a solvent that can particularly dissolve the arrangement adjusting wire 15 but cannot dissolve the horizontal wire 12B and the support wire 320.

As such a solvent, as long as the solubility in the arrangement adjusting wire 15 and the horizontal wire 12B can be ensured, a solvent usually used when forming an organic semiconductor using each hole transport material or each electron transport material is used. it can. In the present embodiment, for example, toluene, xylene, acetic acid or the like is used. This material-containing liquid 130 may further contain components such as an additive such as dicarboxylic acid for controlling orientation and a binder such as methacrylic acid for maintaining strength.

In the material adhesion step, the material-containing liquid 130 is brought into contact with the electrode structure 22 to dissolve the arrangement adjusting wire 15, and the hole transport material and the electron transport material in the material-containing liquid 130 are removed from the electrode structure 22. It adheres to the conductive wire 120.
In the case of using the material-containing liquid 130 in which the hole transport material is dissolved and the material-containing liquid 130 in which the electron transport material is dissolved, each is sequentially brought into contact with part or all of the electrode structure 22 to dissolve both the transport materials. In the case of using the material-containing liquid 130, the method may be such that the material-containing liquid 130 is brought into contact with the electrode structure 22 to attach the hole transport material or the electron transport material to the conductive wire 120. . For example, the material-containing liquid 130 may be applied to the electrode structure 22 and printed by an ink jet printer, or the electrode structure 22 may be immersed in the material-containing liquid 130 and dipped.

In this embodiment, as shown in FIG. 11A, the material-containing liquid 130 is brought into contact by a method such as dipping, and the material-containing liquid 130 is arranged between the plurality of electrode portions 230. As a result, as shown in FIG. 11B, the arrangement adjusting wire 15 arranged between the conductive wires 120 of each electrode portion 230 is dissolved.

The dissolved components of the arrangement adjusting wire 15 may be dispersed in the material-containing liquid 130 and may be left behind, or may be replaced by the material-containing liquid 130 and removed. Here, the components of the arrangement adjusting wire 15 are dissolved in the material and arranged in this material. As a result, the material-containing liquid 130 is disposed in the portion where the arrangement adjusting wire 15 has been disposed, and the hole transport material and the electron transport material of the material-containing liquid 130 are equivalent to other portions between and in the vicinity of the conductive wire 120. Be placed. Then, the hole transport material and the electron transport material adhere to the conductive wire 120 of the first conductive wire 121 and the conductive wire 120 of the second conductive wire 122, respectively.

Thereafter, in the semiconductor formation step, the p-type organic semiconductor 13A is connected to a part of the conductive wire 120 from the hole transport material attached to the conductive wire 120 constituting the first conductive wire 121 together with the material-containing liquid 130. The n-type organic semiconductor 13 </ b> B is formed in a state of being connected to the other conductive wire 120 from the electron transport material formed and attached to the conductive wire 120 constituting the second conductive wire 122.

In order to form the organic semiconductors 13A and 13B from the material-containing liquid 130, the solvent in the material-containing liquid 130 may be volatilized and dried, and after drying, heat treatment, annealing treatment, or the like may be performed. . Such processing can be performed at a relatively low temperature.
When a precursor is used as a hole transport material or an electron transport material, the precursor is converted into a hole transport material or an electron transport material by a treatment after drying, and the organic semiconductor 13A is connected to the conductive wire 120 while being connected to the conductive wire 120. , 13B can be formed. Moreover, even if it is a case where hole transport material or electron transport material itself is used, the performance of photoelectric conversion of the obtained photoelectric conversion device 1 improves by performing the heat processing and annealing process after drying.

Finally, a protective layer is laminated on the entire surface of the photoelectric conversion layer 13. For the protective layer, a material such as a transparent resin that can transmit light received and emitted by the photoelectric conversion layer 13 can be used. Thereby, manufacture of the photoelectric conversion device 1 is completed.

Next, the effect in the manufacturing method of the above-mentioned photoelectric conversion device 1 is demonstrated.
According to such a manufacturing method, since the electrode structure 22 integrates the plurality of conductive wires 120 together with the arrangement adjusting wire 15, even the flexible conductive wire 120 can be easily arranged. In addition, by adjusting the number, shape, arrangement, etc. of the arrangement adjusting wire 15, the arrangement, shape, density, etc. of each conductive wire 120 can be adjusted to easily adjust the arrangement interval of the conductive wire 120, and the state Can be easily and stably maintained during production. In particular, by arranging the arrangement adjusting wire 15 between the conductive wire rods 120, the conductive wire rods 120 are accurately separated from each other at a predetermined interval to form the electrode structure 22, so that each conductive wire rod 120 is stabilized at a desired interval. Can be arranged. For this reason, variations in the arrangement interval of the plurality of conductive wires 120 are prevented, and the performance of photoelectric conversion is ensured.

In addition, since the arrangement adjusting wire 15 is dissolved by bringing the material containing liquid 130 into contact with the electrode structure 22, the hole transport material and the electron transport of the material containing liquid 130 are disposed at the portion where the arrangement adjusting wire 15 is arranged. Material can be placed. Therefore, more organic semiconductors 13A and 13B can be disposed uniformly between the conductive wires 120, and the performance of photoelectric conversion can be ensured. Therefore, it is possible to easily manufacture the photoelectric conversion device 1 having flexibility while ensuring the performance of photoelectric conversion.

Moreover, in the obtained photoelectric conversion device 20, the support wire 320 is in a state where the first conductive wire 121 made of the plurality of conductive wires 120 and the second conductive wire 122 made of the plurality of conductive wires are held by the horizontal wire 12 </ b> B. Is supported by Therefore, when the photoelectric conversion device 20 is deformed, the force acting between the first conductive wire 121 on one surface side and the second conductive wire 122 on the other surface side can be received by the support wire 320. Therefore, exfoliation etc. can be prevented, damage to the photoelectric conversion layer 13 of the photoelectric conversion device 20 can be prevented, and durability can be improved.

In this method, an electrode structure comprising a net comprising a plurality of vertical wires 12A made up of a plurality of conductive wires 120 and arrangement adjusting wires 15, and a plurality of horizontal wires 12B arranged crossing the plurality of vertical wires 12A. 22 was prepared, and a material-containing liquid 130 was prepared using a solvent capable of dissolving the arrangement adjusting wire 15 and not dissolving the horizontal wire 12B. Thereby, the horizontal wire 12B can be left in the photoelectric conversion layer 13 after dissolving the arrangement adjusting wire 15, and even if it is deformed at the time of use, the photoelectric conversion layer 13 is hardly damaged, and the durability of the photoelectric conversion device 1 is improved. In addition, the interval between the conductive wires 120 can be maintained.

In this embodiment, a material-containing liquid 130 containing a hole transport material and an electron transport material is prepared, and the p-type organic semiconductor 13 </ b> A is connected to a part of the conductive wire 120 using the material-containing liquid 130. At the same time, the n-type organic semiconductor 13B was formed in a state of being connected to the other conductive wire 120. Thereby, the p-type organic semiconductor 13A and the n-type organic semiconductor 13B can be formed at the same time, and manufacturing is easy.

The photoelectric conversion layer 13 having the organic semiconductors 13A and 13B was formed by adhering the material-containing liquid 130 to one side of the electrode structure 22. Therefore, in the obtained photoelectric conversion device 1, the first conductive wire 121 and the second conductive wire 122 are disposed only on one surface side of the photoelectric conversion layer 13 and are not disposed on the other surface side. Therefore, if the other surface side is used as the light receiving surface, the performance of photoelectric conversion can be improved.

The fourth embodiment can be appropriately changed within the scope of the present invention.
In the fourth embodiment, the example in which the arrangement adjusting wire 15 is completely dissolved has been described. However, even if the arrangement adjusting wire 15 partially remains after dissolution, the above-described operation and effect can be achieved depending on the amount of dissolution. Therefore, the present invention can be applied.

The plurality of electrode portions 230 are not integrated into the electrode structure 22 by the support wire 320, but the plurality of electrode portions 230 are not integrated into the support wire 320 to form an electrode structure, and each electrode portion 230 is made into one photoelectric element. You may embed in the conversion layer 13, and may each arrange | position to the one surface side and other surface side of one photoelectric converting layer.
In the said 4th Embodiment, the conductive wire 120 of the electrode part 230 arrange | positioned at the one surface side of the photoelectric converting layer 13 is made into a p-type electrode, and the conductive wire 120 of the electrode part 230 arrange | positioned at the one surface side is made into a p-type electrode. The example was described. However, the first conductive wire 121 and the second conductive wire 122 may be disposed on each electrode portion 230. Further, the present invention can be applied even when the plurality of electrode portions 230 are arranged separately facing each other without arranging the support wire 320.

In 4th Embodiment, although the example which has arrange | positioned the horizontal wire 12B as the electrode structure 22 was demonstrated, if the conductive wire 120 and the arrangement | positioning adjustment wire 15 can be integrated and arrange | positioned in a predetermined position, it will be horizontal. The wire 12B may not be used. In addition, a plurality of electrode structures 22 may be embedded in the same photoelectric conversion layer 13 without embedding one electrode structure 22 in one photoelectric conversion layer 13, and a plurality of photoelectric conversion layers 13 are stacked. Then, one or a plurality of electrode structures 22 may be embedded in each.

[Fifth Embodiment]
The fifth embodiment of the present invention will be described in detail with reference to FIGS. The photoelectric conversion device will be described on the assumption that a solar cell is used to convert light into electric energy. However, the present invention can be similarly applied to a device that converts electric energy into light energy.

FIG. 12 is a cross-sectional view of the photoelectric conversion device 1 according to the fifth embodiment of the present invention, and FIG. 13 is a perspective view of the photoelectric conversion device 1.

The photoelectric conversion device 1 includes an electrode 12 and a photoelectric conversion layer 13. In FIG. 13, the display of the photoelectric conversion layer 13 is omitted.

As shown in FIG. 13, the electrode 12 includes a lower electrode part 120 and an upper electrode part 220 supported by a support part 320 rising from the lower electrode part 120.

The lower electrode portion 120 includes a plurality of vertical wires 120A and a plurality of horizontal wires 120B. The vertical wire 120A and the horizontal wire 120B are woven so as to intersect each other. That is, the lower electrode portion 120 is formed in a plain weave net shape.

As the vertical wire 120A, two types of wires, specifically, the first conductive wire 121 and the first insulating wire 122 are used. As shown in FIG. 13, the first conductive wire 121 and the first insulating wire 122 are alternately arranged. The first conductive wire 121 and the first insulating wire 122 are juxtaposed at a predetermined interval so as not to contact each other.

As the first conductive wire 121, for example, a metal wire such as a copper wire or a stainless steel wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used. One end 121E of each first conductive wire 121 is connected to the first bus bar 121A as shown in FIG.

The first insulating wire 122 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.

The second insulating wire is used as the horizontal wire 12B. Similar to the first insulating wire 122, the second insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.

The upper electrode section 220 includes a plurality of vertical wires 220A and a plurality of horizontal wires 220B. The vertical wire 220A and the horizontal wire 220B are woven so as to intersect each other. That is, the upper electrode portion 220 is formed in a plain weave net shape.

As the vertical wire 220A, two types of wires, specifically, the second conductive wire 221 and the third insulating wire 222 are used. As shown in FIG. 13, the second conductive wire 221 and the third insulating wire 222 are alternately arranged. The second conductive wire 221 and the third insulating wire 222 are juxtaposed at a predetermined interval so as not to contact each other.

As the second conductive wire 221, for example, a metal wire such as a copper wire or a stainless steel wire, a wire obtained by performing metal plating on the surface of a chemical fiber, or the like can be used. One end 221E of each second conductive wire 221 is connected to the second bus bar 221A as shown in FIG.

The third insulating wire 222 is made of a flexible insulating resin such as a nylon resin, a silicone resin, a urethane resin, an epoxy resin, a polycarbonate resin, or a vinyl resin.

A fourth insulating wire is used as the horizontal wire 220B. Similar to the third insulating wire 222, the fourth insulating wire is made of a flexible insulating resin such as nylon resin, silicone resin, urethane resin, epoxy resin, polycarbonate resin, or vinyl resin.

The support part 320 supports the upper electrode part 220 with respect to the lower electrode part 120 so that the upper electrode part 220 and the lower electrode part 120 are arranged to face each other at a predetermined distance. This support part 320 is comprised by the 5th insulated wire. As shown in FIG. 13, the support part 320 supports the upper electrode part 220 so that the upper electrode part 220 is located a predetermined distance D away from the lower electrode part 120. Therefore, the fifth insulating wire constituting the support portion 320 is configured to have higher rigidity than the first insulating wire 122 and the fourth insulating wire constituting the lower electrode portion 120 and the upper electrode portion 220. Is done. The fifth insulating wire is made of a resin material that is thicker than the first insulating wire 122 or the like and harder than the resin material that constitutes the first insulating wire 122 or the like. For example, a wire material having a thickness of about 20 μm to 30 μmm is used. Constructed using.

The fifth insulating wire constituting the support part 320 is knitted and provided on the lower electrode part 120 and the upper electrode part 220 (see FIG. 14 described later). For example, in the electrode 12, the lower electrode portion 120, the upper electrode portion 220, and the support portion 320 are configured by double raschel knitting. In FIG. 13, for convenience of explanation, the distance D between the lower electrode part 120 and the upper electrode part 220 is shown to be wide, but the distance D is not limited to the dimensions in the illustrated example.

The first conductive wire 121, the second conductive wire 221, the first insulating wire 122, the third insulating wire 222, etc. are set to a thickness of about 20 μm to 25 μmm.

Next, the photoelectric conversion layer 13 will be described. FIG. 14 is a schematic enlarged view of a circle A region in FIG. The photoelectric conversion layer 13 is provided on one electrode, that is, the lower electrode portion 120, and the p-layer organic semiconductor 13A serving as a hole transport material, and on the other electrode, that is, the upper electrode portion 220, and the electron transport material. And an n-layer organic semiconductor 13B. As shown in FIG. 14, the organic semiconductor 13B is provided on the organic semiconductor 13A. Therefore, the lower electrode part 120 functions as a p-type electrode, and the upper electrode part 220 functions as an n-type electrode. The p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B form a pn junction.

The materials of the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B in the present embodiment can be the same as those in the third embodiment.

A method for manufacturing the photoelectric conversion device 1 shown in FIG. First, the first conductive wire 121, the first insulated wire 122, and the second insulated wire are prepared and plain weave to produce the lower electrode portion 120. Similarly, the upper electrode part 220 is produced. Thereafter, a hole transport material to be the p-layer organic semiconductor 13A is applied to a predetermined portion, for example, one electrode, that is, the lower electrode portion 120 by, for example, an ink jet printer.

Next, an electron transport material to be the n-layer organic semiconductor 13B is applied on the p-layer by the same ink jet printer as in the case of the p-layer organic semiconductor 13A.

Thereby, a pn junction is formed by the p-layer organic semiconductor 13A and the n-layer organic semiconductor 13B. The n-layer organic semiconductor 13B may be applied, and then the p-layer organic semiconductor 13A may be applied.

Finally, the lower electrode 120 is overlaid on the n layer. Thereby, the photoelectric conversion device 1 is produced. Note that the method is not limited to the above-described method as long as the photoelectric conversion device 1 illustrated in FIG. 12 is manufactured.

In the photoelectric conversion device 1 configured as described above, for example, when light is incident on the photoelectric conversion layer 13 from the upper electrode portion 220 side, the light L and the second conductive wire 221 constituting the upper electrode portion 220 It passes between the three insulated wires 222 and enters the inner region from the upper surface of the photoelectric conversion layer 13. As shown in FIG. 14, the light L ′ can enter the inner region also from the lower surface of the photoelectric conversion layer 13. The lower electrode portion 120 and the upper electrode portion 220 are made of a material that allows light to pass through a plurality of gaps S for light passage, that is, regions of the gaps S.

According to the present invention, since the electrode provided on the surface of the photoelectric conversion layer 13 on which light is incident is configured to have a plurality of gaps S for passing light, it is not necessary to configure the electrode with a transparent electrode, and the transparent It is not necessary to use a rare metal for the electrode as a material. Therefore, Cu, Al, etc. can be used for the electrode 12 for photoelectric conversion devices. Since the photoelectric conversion device 1 is formed of a flexible net, the electrode 12 can be attached to a curved surface after being formed in a flat shape. Even when the photoelectric conversion device 1 is attached to a curved surface, the upper electrode portion 220 is supported by a plurality of support portions 320 rising from the lower electrode portion 120, and therefore the distance D between the upper electrode portion 220 and the lower electrode portion 120. Can be maintained. Thereby, the short circuit with the upper side electrode part 220 and the lower side electrode part 120 can be prevented. Since the upper electrode portion 220 is formed in a net shape with a wire rod functioning as an electrode, a member such as a bus bar is brought into contact with the wire rod by crimping or welding a member such as a bus bar to the end portion of the net. Therefore, the manufacturing process for extracting electricity is facilitated. Furthermore, since light can be taken in from both surfaces of the photoelectric conversion layer 13, an improvement in conversion efficiency can be expected.

As mentioned above, although 5th Embodiment of this invention was described, in the range of this invention, it can change suitably and can implement. In the above configuration, a configuration in which one first insulating wire 122 and one third insulating wire 222 are provided between the first conductive wires 121 and between the second conductive wires 221 has been described. FIG. As shown in FIG. The photoelectric conversion device may be configured by omitting the first insulating wire 122 and the third insulating wire 222 as shown in FIG.

[First and second embodiments]
1: Display device 2: Display unit 3: Control unit 11, 21, 31, 41: Light emitting layer 62, 22, 32, 42: One linear electrode group 62a, 22a, 32a, 42a: Conductive wire material 62b, 62c, 22b, 22c, 32b, 32c, 42b, 42c: arrangement adjusting wire rods 63, 23, 33, 43: other wire electrode groups 63a, 23a, 33a, 43a: conductive wire rods 63b, 63c, 23b, 23c, 33b , 33c, 43b, 43c: arrangement adjusting wires 64, 24, 34, 44: spacing support member 15a: one switching control unit 15b: the other switching control unit 16: voltage supply unit 17: protective film 51 , 52: gap 53: protective film

[Third Embodiment]
1: Photoelectric conversion device 12: Electrode 120 for photoelectric conversion device: Lower electrode portion 120A: Vertical wire rod 120B of the lower electrode portion: Horizontal wire rod 121 of the lower electrode portion: First conductive wire rod 122 of the lower electrode portion: Second insulating wire 220 of the lower electrode portion: Upper electrode portion 220A: Vertical wire rod 220B of the upper electrode portion: Horizontal wire rod 221 of the upper electrode portion: Second conductive wire rod 222 of the upper electrode portion: Second insulating wire rod of the upper electrode portion 13: photoelectric conversion layer 13A: p-layer organic semiconductor 13B: n-layer organic semiconductor 19: protective layer

[Fourth Embodiment]
1: Photoelectric conversion device 12: Electrode structure 121: p-type electrode 122: n-type electrode 12A: vertical wire 12B: horizontal wire 120: conductive wire 7: bus bar 15: arrangement adjusting wire 13: photoelectric conversion layer 13A: p-type Organic semiconductor 13B: n-type organic semiconductor 130: material containing liquid 11: base material 20: photoelectric conversion device 22: electrode structure 230: electrode part 320: support wire

[Fifth Embodiment]
1: Photoelectric conversion device 12: Electrode 120 for photoelectric conversion device: Lower electrode portion 120A: Vertical wire rod 120B of the lower electrode portion: Horizontal wire rod 121 of the lower electrode portion: First conductive wire rod 122 of the lower electrode portion: Second insulating wire 220 of the lower electrode portion: Upper electrode portion 220A: Vertical wire rod 220B of the upper electrode portion: Horizontal wire rod 221 of the upper electrode portion: Second conductive wire rod 222 of the upper electrode portion: Second insulating wire rod of the upper electrode portion 320: support part 13: photoelectric conversion layer 13A: organic semiconductor 13B of p layer: organic semiconductor 19 of n layer 19: protective layer

Claims (13)

1. A light emitting layer made of an organic EL material;
   One linear electrode group consisting of conductive wire materials provided on one surface side of the light emitting layer and extending in the horizontal direction and arranged in the vertical direction at intervals,
   The other linear electrode group made of a conductive wire provided on the other surface side of the light emitting layer and extending in the vertical direction and arranged at intervals in the horizontal direction;
   A display device comprising:
2. Each light emitting layer made of an organic EL material corresponding to each color;
   One linear electrode group consisting of conductive wire materials provided on one surface side in each light emitting layer and extending in the horizontal direction and arranged in the vertical direction at intervals,
   The other linear electrode group comprising conductive wires provided on the other surface side in each of the light emitting layers and extending in the vertical direction and arranged at intervals in the horizontal direction;
   A display device comprising:
3. In the one line electrode group, a wire for placement adjustment extending in the lateral direction is provided between the conductive wires, and the wire for placement adjustment maintains a distance between the conductive wires,
   In the other wire electrode group, a wire for placement adjustment extending in the vertical direction is provided between the conductive wires, and the wire for placement adjustment maintains the spacing between the conductive wires.
   The display device according to claim 1.
4. The gap between the conductive wire and the arrangement adjusting wire in the one line electrode group and the other line electrode group is in the same order as the equivalent cross-sectional dimension of the conductive wire. Display device.
5. One switching circuit that applies a voltage to an arbitrary conductive wire in the one linear electrode group, and the other switching circuit that applies a voltage to an arbitrary conductive wire in the other linear electrode group, The display device according to claim 1.
6. An electrode for a photoelectric conversion device provided on both sides of a photoelectric conversion layer that converts light and electric energy,
   A lower electrode portion provided on the lower surface side of the photoelectric conversion layer, and an upper electrode portion provided on the upper surface side of the photoelectric conversion layer,
   The lower electrode portion and the upper electrode portion include a plurality of vertical wires and a plurality of horizontal wires,
   The vertical wire consists of a plurality of conductive wires provided at a distance from each other, and the horizontal wire consists of a plurality of insulating wires provided at a distance from each other,
   One of the lower electrode part and the upper electrode part functions as a p-type electrode, and the other of the lower electrode part and the upper electrode part functions as an n-type electrode.
7. An electrode for a photoelectric conversion device provided on both sides of a photoelectric conversion layer that converts light and electric energy,
   The lower electrode portion provided on the lower surface side of the photoelectric conversion layer, the upper electrode portion provided on the upper surface side of the photoelectric conversion layer, and the lower electrode portion and the upper electrode portion face each other with a predetermined distance therebetween. A support portion for supporting the upper electrode portion with respect to the lower electrode portion,
   The lower electrode portion and the upper electrode portion include a plurality of vertical wires and a plurality of horizontal wires,
   The vertical wire consists of a plurality of conductive wires provided at a distance from each other, the horizontal wire consists of a plurality of insulating wires provided at a distance from each other,
   One of the lower electrode part and the upper electrode part functions as a p-type electrode, and the other of the lower electrode part and the upper electrode part functions as an n-type electrode.
8. The electrode for a photoelectric conversion device according to claim 6 or 7, wherein at least one of the insulated wires is provided between the conductive wires constituting the upper electrode portion and the lower electrode portion.
9. 8. The optoelectronic device electrode according to claim 6, wherein a p-layer organic semiconductor made of a hole transport material is provided on the P-type electrode, and an electron transport material is provided on the n-type electrode. A photoelectric conversion device provided with an n-layer organic semiconductor.
10. A material-containing liquid containing at least one of a hole transport material and an electron transport material in a solvent is attached to the electrode structure, and an organic semiconductor is removed from the material attached to the electrode structure. In the manufacturing method of the photoelectric conversion device formed in a state in contact with
    The electrode having a plurality of electrode portions integrated with a plurality of conductive wire rods and an arrangement adjusting wire rod for adjusting the arrangement interval of the conductive wire rods, and supported by the support wire in a state where the plurality of electrode portions are opposed to each other. Prepare the structure,
    Preparing the material-containing liquid using a solvent capable of dissolving the arrangement adjusting wire and not dissolving the support wire;
    A method for producing a photoelectric conversion device, wherein the material-containing liquid is brought into contact with the electrode structure to dissolve the arrangement adjusting wire and to attach the at least one material to the conductive wire to form the organic semiconductor. .
11. The method of manufacturing a photoelectric conversion device according to claim 10, wherein the electrode structure in which the conductive wires are separated from each other by a predetermined interval by interposing the arrangement adjusting wire between the conductive wires.
12. The electrode structure using a plurality of the electrode portions including a plurality of vertical wires made of the plurality of conductive wires and the arrangement adjusting wire, and a plurality of horizontal wires arranged to intersect the plurality of vertical wires. Prepare
    The method for producing a photoelectric conversion device according to claim 10 or 11, wherein the material-containing liquid is prepared using the solvent capable of dissolving the arrangement adjusting wire and not dissolving the horizontal wire.
13. The material-containing liquid containing the hole transport material and the electron transport material is prepared and brought into contact with the electrode structure, and a p-type organic semiconductor is formed in a state of being connected to some of the conductive wires and n-type The manufacturing method of the photoelectric conversion device of Claim 10 or 11 formed in the state which connected the organic semiconductor to the said electrically conductive wire of another part.

Images