WO2013038077A1 - Transistor organique a effet de champ - Google Patents
Transistor organique a effet de champ Download PDFInfo
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- WO2013038077A1 WO2013038077A1 PCT/FR2012/051301 FR2012051301W WO2013038077A1 WO 2013038077 A1 WO2013038077 A1 WO 2013038077A1 FR 2012051301 W FR2012051301 W FR 2012051301W WO 2013038077 A1 WO2013038077 A1 WO 2013038077A1
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- WIPO (PCT)
- Prior art keywords
- layer
- porous layer
- organic transistor
- transistor according
- plastic substrate
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title description 13
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 229920003023 plastic Polymers 0.000 claims abstract description 31
- 239000004033 plastic Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000011148 porous material Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 63
- 239000013545 self-assembled monolayer Substances 0.000 description 12
- 239000011112 polyethylene naphthalate Substances 0.000 description 6
- 239000002094 self assembled monolayer Substances 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WLLGXSLBOPFWQV-UHFFFAOYSA-N MGK 264 Chemical compound C1=CC2CC1C1C2C(=O)N(CC(CC)CCCC)C1=O WLLGXSLBOPFWQV-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical compound NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Definitions
- the present invention relates to the field of organic transistors, such as for example thin-film transistors, more commonly known as "Organic Thin Film Transistor” (OTFT), and more particularly to an organic transistor comprising means for to decrease the dielectric constant of the surface of the plastic substrate.
- organic transistors such as for example thin-film transistors, more commonly known as "Organic Thin Film Transistor” (OTFT)
- OTFT Organic Thin Film Transistor
- an organic thin film transistor (OTFT) 1 of the prior art having a structure called "high gate” and “low contacts”.
- Said transistor 1 comprises a lower substrate 2, on the upper face of which are formed two electrodes 3, 4, respectively a source electrode 3 and a drain electrode 4.
- a semiconductor layer 5 is deposited on the lower substrate 2, and on the source 3 and drain 4 electrodes.
- a dielectric layer 6 is deposited on the semiconductor layer 5, and on which is formed a gate electrode 7.
- the transistor effect is obtained, in a manner known per se, by applying a voltage between the gate electrode 7 and the lower substrate 2, so as to create, in the semiconductor layer 5, a conduction channel 8 between the source electrode 3 and the drain electrode 4.
- the electrical permittivity of the flexible substrates forming the lower substrate 2 is generally greater than 3 (about 3.5), generating electrical stress in the semiconductor layer 5 and / or or by creating charge trapping at the lower substrate / semiconductor layer interface (also known as the escape route), which greatly disrupts the performance of these "high gate” organic transistors.
- the flexible polyethylene naphthalate (PEN) substrates have on their surface a high concentration of dipoles (COOH, polar OH " fluoro acid group) which are electrically non-neutral (positive or negative charges) and which strongly alter the electrical conduction in the layer semiconductor 5 of these organic transistors.
- FIG. 2 also describing a field effect transistor of the prior art, there is the structure of the transistor of FIG. 1, but this furthermore comprises a self-assembled monolayer 8 positioned between the lower substrate. 2 and the semiconductor layer 5 and the source 3 and drain 4 electrodes.
- a semiconductor layer 5 made from a N, N'-dialkylsubstituted- (1,7- (1,6) -dicyanoperylene-3,4: 9, 10- bis (dicarboximide) (n-channel), sold under the trademark Activlnk N1400 by the company Polyera, or poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] said poly (triaryl amine) or PTAA (P-channel) and several self-assembled monolayers (SAM), with reference to Figure 3, comprising alkyl / phenyl-amino functional groups (Examples 1 and 2), alkyl (Examples 3 and 4) and halo-alkyl ( Examples 5 and 6).
- SAM self-assembled monolayers
- One of the aims of the invention is therefore to remedy these drawbacks by proposing an organic field effect transistor of the OTFT type of simple design, inexpensive and limiting degradation of performance of these organic transistors.
- an organic transistor comprising at least one lower plastic substrate called plastic substrate, two electrodes, respectively a source electrode and a drain electrode, deposited above the plastic substrate. a semiconductor layer made of an organic semiconductor material and deposited on and in contact with the electrodes and the plastic substrate, a dielectric layer made of a dielectric material and deposited on the semiconductor layer, and a gate electrode formed on the dielectric layer.
- This organic transistor further comprises a layer made of a porous and dielectric material, extending between the plastic substrate and the semiconductor layer, said porous layer extending at least directly above the conduction channel. that is, between the source and drain electrodes to decrease the dielectric constant of the surface of said plastic substrate.
- Deposition of this porous layer between the lower substrate and the semiconductor layer and the source and drain electrodes significantly reduces the permittivity, i.e., the dielectric constant between the plastic substrate and the semiconductor layer.
- conductive which allows on the one hand to avoid the occurrence of electrical stress and on the other hand, to maintain good performance of the organic transistor.
- the pores of the porous layer have dimensions less than 50 nanometers in diameter.
- the terminal groups of the porous layer are advantageously apolar and the semiconductor layer has a low roughness.
- the porous layer has a permittivity less than 2.5.
- the porous layer is obtained from acrylate monomer and / or at least one of its derivatives, from polystyrene, polyvinylphenol or mixtures thereof.
- It can be obtained by crosslinking photo of methyl methacrylate through a photolithographic mask. It can also be obtained from silane, or be made of porous silica.
- It may also consist of porous alumina obtained by a sol-gel process.
- FIG. 1 is a diagrammatic sectional view of an organic transistor with a "high gate” and “low contact” of the OTFT type of the prior art
- FIG. 2 is a diagrammatic sectional view of an organic transistor with a "high gate” and “low contacts” of the OTFT type comprising a self-assembled monolayer (SAM) of the prior art,
- SAM self-assembled monolayer
- FIG. 3 is a schematic representation of the molecules from which the self-assembled monolayer (SAM) of the organic transistors of the prior art is obtained,
- FIG. 4 is a schematic representation of the various molecules from which the semiconductor layer of the organic transistors of the prior art is obtained
- FIGS. 5A and 5B are curves representing the intensity of the current between the drain and the source as a function, on the one hand, of the voltage between the drain and the source, and on the other hand of the voltage between the gate and the source organic field effect transistors of the prior art
- FIG. 6 is a schematic sectional view of an organic field effect transistor of the OTFT type according to the invention.
- FIG. 7 is a curve representing the intensity of the current measured between the drain and the source as a function of the voltage between the gate and the source, on the one hand for an organic field-effect transistor comprising a porous layer according to FIG. invention, and secondly for an organic field-effect transistor of the prior art having no porous layer.
- the transistor of the OTFT type 1 comprises a lower plastic substrate called plastic substrate 2, on the upper face of which is deposited a porous layer 9 made of a porous material.
- Said plastic substrate 2 is made of a plastic material chosen from the following list: polymers such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), etc., or any other plastic material well known to the skilled person.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PI polyimide
- the porous layer 9 is made of a dielectric material having a permittivity less than 2.5, a stable chemical structure and comprising neutral groups without polar dipoles, that is to say apolar.
- said porous layer 9 is electrically neutral, insofar as it does not comprise electron-donor or electropositive groups.
- the pores of the porous layer 9 preferably have a diameter of less than 50 nanometers. The important thing is to obtain a final or final surface of the semiconductor layer of low roughness (Ra ⁇ 15 nanometers). The size of the pores is therefore chosen according to the thickness of the semiconductor layer: indeed, it is well known that the thicker the layer, and the less its end surface reflects the roughness of its initial support.
- a pore diameter of less than or equal to 50 nanometers is acceptable.
- a pore diameter of less than or equal to 20 nanometers is acceptable.
- a pore diameter of less than or equal to 10 nanometers is acceptable.
- the porous layer 9 is obtained from acrylate monomer and / or at least one of its derivatives, and preferably by photo-crosslinking of methyl methacrylate through a photolithographic mask and / or from silane and / or porous silica and / or porous alumina obtained by a sol-gel process and / or any other suitable material known to those skilled in the art.
- Other methods such as emulsion, demixing or direct deposition through a mask can also be implemented.
- the porous layer 9 may be deposited on the plastic substrate 2 by any method well known to those skilled in the art, such as a spin coating (better known as “spin coating"), a deposit by spreading, a screen printing deposit or a deposit by printing for example, or even by gravure, flexo-engraving or by inkjet.
- the transistor further comprises two electrodes 3, 4, a source electrode 3 and a drain electrode 4, deposited on the porous layer 9.
- a semiconductor layer 5 is deposited on the porous layer 9, the source electrode 3 and the drain electrode 4.
- a dielectric layer 6 is deposited on the semiconductor layer 5.
- a gate electrode 7 is deposited on said dielectric layer 6.
- the source 3 and drain 4 electrodes are, for example, made of metal, such as aluminum, titanium, nickel, gold, chromium, etc., or of metal particles, of metal oxides, such as indium-tin oxide, indium-zinc oxide, etc., or even conductive polymers, such as 3,4-polyethylene dioxythiophene-polystyrene, sulfonate (PEDOT: PSS) or polyaniline, etc. ., doped silicon materials or any other suitable conductive material well known to those skilled in the art.
- metal such as aluminum, titanium, nickel, gold, chromium, etc.
- metal particles such as indium-tin oxide, indium-zinc oxide, etc.
- metal oxides such as indium-tin oxide, indium-zinc oxide, etc.
- conductive polymers such as 3,4-polyethylene dioxythiophene-polystyrene, sulfonate (PEDOT: PSS) or polyaniline, etc. .,
- the semiconductor layer 5 is, for example, constituted by a semiconducting organic layer made of a material chosen from the following list: semiconductor organic molecules such as tetracene, pentancene, phthalocyanine, semiconductor polymers such as polytiophene, polyfluorene polyphenylene vinylene or their derivatives such as poly (3-octyl), thiophene, poly [2-methoxy-5- (2'-ethylhexyloxy) -1,4], phenylene, vinylamine or oligomer such as a-sexithiophenes .
- semiconductor organic molecules such as tetracene, pentancene, phthalocyanine
- semiconductor polymers such as polytiophene, polyfluorene polyphenylene vinylene or their derivatives such as poly (3-octyl), thiophene, poly [2-methoxy-5- (2'-ethylhexyloxy) -1,4], pheny
- the semiconductor layer 5 can also be made of a semiconductor inorganic material, such as silicon or gallium arsenide (GaAs) or even ZnO for example, without departing from the scope of the invention .
- the dielectric layer 6 is, for its part, made of a material chosen for example from the following list: silicon dioxide, silicon nitrate, titanium dioxide, aluminum oxide, hafnium dioxide, polyimides, polyvinyl, pyrrolidone , polymethyl methacrylate, polyamide, parylene, polystyrene or fluoropolymers or any other dielectric material well known to those skilled in the art.
- Deposition of the porous layer 9 between the lower substrate 2 and the semiconductor layer 5 and the source 3 and drain 4 electrodes significantly reduces the permittivity, that is to say the dielectric constant between the plastic substrate. 2 and the layer 5. In doing so, it avoids the occurrence of electrical stress and trapping charges and maintains good performance of the organic transistor.
- a porous layer 9 of methyl methacrylate deposited by photo-crosslinking through a mask on a plastic layer 2 of polyethylene naphthalate (PEN) makes it possible to reduce the permittivity of polyethylene naphthalate (PEN) which is normally 3 at 1.5.
- the porous layer 9 is deposited full plate on the plastic substrate 2, that is to say that it covers the entire upper face of said plastic substrate 2.
- the porous layer may be deposited only in line with the conduction channel 10 of the semiconductor layer 5 extending between the source 3 and drain 4 electrodes, without departing from the scope of the invention.
- FIG. 7 is a curve representing the intensity of the current measured between the drain and the source as a function of the voltage between the gate and the source on the one hand for an organic field effect transistor comprising a porous layer 9 according to the invention, and secondly for a prior art organic field-effect transistor having no porous layer 9, said porous layer of the transistor according to the invention makes it possible to preserve the performance of said transistor unlike the transistors of the prior art.
- the surface of the plastic substrate 2 made of polyethylene naphthalate (PEN) attracts the electrons and the different types of dipole present on the surface of the plastic substrate 2 strongly shift the curves of transistor in both regimes, namely the linear regime and the saturated regime, unlike the transistor according to the invention for which the curves of the two regimes are neither offset nor degraded.
- PEN polyethylene naphthalate
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- Thin Film Transistor (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020147005116A KR20140059787A (ko) | 2011-09-14 | 2012-06-11 | 유기 전계 효과 트랜지스터 |
EP12732691.6A EP2756531B1 (fr) | 2011-09-14 | 2012-06-11 | Transistor organique a effet de champ |
US14/178,805 US9741953B2 (en) | 2011-09-14 | 2014-02-12 | Organic field-effect transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1158178A FR2980040B1 (fr) | 2011-09-14 | 2011-09-14 | Transistor organique a effet de champ |
FR1158178 | 2011-09-14 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US14/178,805 Continuation US9741953B2 (en) | 2011-09-14 | 2014-02-12 | Organic field-effect transistor |
Publications (1)
Publication Number | Publication Date |
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WO2013038077A1 true WO2013038077A1 (fr) | 2013-03-21 |
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PCT/FR2012/051301 WO2013038077A1 (fr) | 2011-09-14 | 2012-06-11 | Transistor organique a effet de champ |
Country Status (6)
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US (1) | US9741953B2 (fr) |
EP (1) | EP2756531B1 (fr) |
JP (1) | JP2014530490A (fr) |
KR (1) | KR20140059787A (fr) |
FR (1) | FR2980040B1 (fr) |
WO (1) | WO2013038077A1 (fr) |
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KR102038124B1 (ko) | 2016-06-27 | 2019-10-29 | 숭실대학교산학협력단 | 유기 반도체 소자의 제조 방법 |
US10991894B2 (en) | 2015-03-19 | 2021-04-27 | Foundation Of Soongsil University-Industry Cooperation | Compound of organic semiconductor and organic semiconductor device using the same |
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JPH05326402A (ja) * | 1992-05-15 | 1993-12-10 | Ricoh Co Ltd | 半導体装置の製造方法 |
JP2002203861A (ja) * | 2000-07-24 | 2002-07-19 | Matsushita Electric Ind Co Ltd | 半導体装置、液晶表示装置、el表示装置、半導体薄膜の製造方法および半導体装置の製造方法 |
FR2870989A1 (fr) * | 2004-05-27 | 2005-12-02 | Commissariat Energie Atomique | Substrat pour application electronique, comprenant un support flexible et son procede de fabrication |
WO2009105045A1 (fr) * | 2008-02-22 | 2009-08-27 | Nanyang Technological University | Création de motifs de nanostructures |
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Also Published As
Publication number | Publication date |
---|---|
FR2980040B1 (fr) | 2016-02-05 |
KR20140059787A (ko) | 2014-05-16 |
FR2980040A1 (fr) | 2013-03-15 |
EP2756531A1 (fr) | 2014-07-23 |
US9741953B2 (en) | 2017-08-22 |
US20140183507A1 (en) | 2014-07-03 |
JP2014530490A (ja) | 2014-11-17 |
EP2756531B1 (fr) | 2018-10-24 |
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