WO2013030001A1 - Composant à semi-conducteur comprenant un corps de refroidissement - Google Patents

Composant à semi-conducteur comprenant un corps de refroidissement Download PDF

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Publication number
WO2013030001A1
WO2013030001A1 PCT/EP2012/065980 EP2012065980W WO2013030001A1 WO 2013030001 A1 WO2013030001 A1 WO 2013030001A1 EP 2012065980 W EP2012065980 W EP 2012065980W WO 2013030001 A1 WO2013030001 A1 WO 2013030001A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat sink
semiconductor component
holding element
semiconductor
cooling
Prior art date
Application number
PCT/EP2012/065980
Other languages
German (de)
English (en)
Inventor
Michael Guenther
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2013030001A1 publication Critical patent/WO2013030001A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
    • H01L2023/4056—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to additional heatsink
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a semiconductor device.
  • the semiconductor component has at least one heat sink, wherein at least one surface area of the heat sink is connected to the semiconductor component in a heat-conducting manner.
  • the heat sink of the aforementioned type is at least partially enclosed by at least one holding element.
  • the holding element preferably has a smaller thermal expansion than the heat sink, in particular given the same temperature rise of the semiconductor component and the heat sink.
  • the holding element preferably has a smaller thermal expansion coefficient than the heat sink.
  • the holding element preferably encloses the cooling element in such a way that an effect of a thermal expansion of the cooling body on the surface area, which has a connection area of a connection of the semiconductor component to the cooling area. body forms prevented or reduced compared to a heat sink without holding element. The effect is, for example, a shearing motion.
  • the semiconductor component is, for example, a diode, in particular a semiconductor diode, a transistor, in particular an IGBT transistor (Insulated Gate 5 Bipolar Transistor) or field-effect transistor.
  • the terminals of a switching path are preferably connected to a heat sink in a heat-conducting or additionally electrically conductive manner.
  • the area of the heat sink is heat-conductively connected to the semiconductor component by means of a bonding layer.
  • the bonding layer is formed, for example, by a solder or an electrically conductive adhesive.
  • the electrically conductive adhesive has, for example as a matrix material epoxy resin.
  • the electrically conductive adhesive preferably has electrically conductive particles, in particular silver particles.
  • the solder preferably has tin.
  • the joining layer can be formed, for example, by means of soft soldering, by means of sintering or by means of diffusion soldering.
  • the surface area of the heat sink is coated, for example, with a metal layer that differs from a material of the heat sink.
  • the metal layer is preferably designed to facilitate soldering, sintering or diffusion soldering.
  • the material of the heat sink is, for example, copper.
  • the metal layer is, for example, an alloy, in particular an alloy comprising silver or additionally at least one further noble metal, in particular gold, platinum or palladium.
  • the solder for sintering or diffusion soldering preferably comprises silver or, more preferably, additionally copper and / or tin. The tin or copper may each form a major component.
  • the heat sink preferably comprises copper and / or aluminum.
  • the copper preferably has an electrical conductivity of at least 40 Mega-Siemens per meter, more preferably 45 Mega-Siemens per meter.
  • the aluminum preferably has an electrical conductivity of at least 30, preferably at least 36 Mega-Siemens per meter.
  • An aluminum heat sink preferably has one
  • a press fit is advantageously formed, which forms a thermal expansion. tion of the heat sink in a plane in which the surface area extends, is reduced or prevented.
  • the holding element is arranged to prevent or at least partially or entirely prevent thermal expansion of the surface area in a plane of the area
  • the heat sink has a lateral surface which extends transversely or with at least one transverse component to the surface region.
  • the heat sink is cylindrical, wherein the lateral surface is formed by a cylinder jacket surface of the heat sink.
  • the surface area is preferably formed at least by a part of a particularly flat end face of the cylindrical heat sink.
  • the semiconductor component is connected to a further heat sink, wherein the further heat sink is enclosed by the holding element or a further holding element of the semiconductor component.
  • the semiconductor component is preferably enclosed between the heat sink and the further heat sink, in particular in the manner of a sandwich composite.
  • heat can advantageously be transmitted from the semiconductor component to the heat sink via two contact surfaces of the semiconductor component, which are in operative contact with a respective surface region of a heat sink.
  • the semiconductor component is electrically contacted by the heat sink.
  • the semiconductor component preferably has at least one electrical connection, wherein the electrical connection has a contact surface which is in electrical and heat-conducting operative contact with the surface region of the heat sink.
  • a diode as a semiconductor device is preferably at least one electrical connection to the heat sink, and another electrical connection to the other heat sink e-connected electrically.
  • the heat sink advantageously forms an electrical connection to the semiconductor component via which the semiconductor component can be energized.
  • the holding element is electrically insulated from the heat sink.
  • the semiconductor component preferably has an electrical insulator which is arranged between the holding element and the heat sink. is net.
  • the electrical insulator is designed to electrically isolate the holding element from the heat sink.
  • the insulator is a ceramic insulator.
  • the ceramic insulator has, for example, aluminum oxide.
  • the insulator is a plastic insulator.
  • the plastic is for example polyimide.
  • the plastic is formed in another embodiment by a preferably fiber-reinforced, in particular glass fiber reinforced epoxy resin.
  • the heat sink copper and / or aluminum.
  • the heat sink has a part connected to the semiconductor component which is formed from copper, wherein the part connected to the semiconductor is connected to a further part of the heat sink, which is formed from aluminum.
  • the further part, which is formed of aluminum, may for example have convection ribs.
  • a heat sink which is formed of copper, a copper material with an electrical conductivity of more than 40 Mega Siemens per meter, preferably more than 45 Mega Siemens per meter.
  • the retaining element is made of an Invar alloy.
  • the Invar alloy preferably has little or no thermal expansion.
  • the copper of the heat sink for example, has a thermal expansion of 16 to 17 microns per meter and Kelvin.
  • the Invar alloy comprises iron and nickel. More preferably, a nickel content of the Invar alloy is between 30 and 50%, more preferably between 33 and 38%, most preferably between 35 and 36%.
  • the Invar alloy has between 2 and 5% cobalt.
  • Invar alloys are each composed of alloying constituents comprising nickel and iron, platinum and iron, palladium and iron, manganese and iron, manganese and cobalt, platinum, nickel and iron, manganese, nickel and iron, cobalt, manganese and iron, chromium and Iron formed.
  • the semiconductor component is preferably a diode, more preferably a component of a rectifier.
  • the rectifier is for example part of an inverter, in particular a solar inverter, inverter or a power output stage of an electric motor.
  • the invention also relates to a method for cooling a semiconductor component, in particular of the semiconductor component of the type described above, wherein the semiconductor component with a surface area of a heat sink is heated. is connected me suedd.
  • a thermal expansion of a heat sink connected to the semiconductor component in a plane of the surface area is reduced or prevented by enclosing a jacket surface of the heat sink.
  • the lateral surface extends transversely or with at least one transverse component to the surface region.
  • Figure 1 shows - schematically - an embodiment of a semiconductor device which is thermally conductively connected to a heat sink;
  • Figure 2 shows - schematically - the semiconductor device shown in Figure 1 in a plan view
  • FIG. 3 shows-schematically-an exemplary embodiment of a semiconductor component which is thermally conductively connected to two heat sinks;
  • Figure 4 shows - schematically - an embodiment of a variant of the semiconductor device shown in Figure 3, in which the heat sinks are held together by a holding element in a press fit and are prevented from thermal expansion;
  • Figure 5 shows - schematically - an embodiment of an arrangement comprising a plurality of semiconductor devices, which are each contacted by two heat sinks heat-conducting.
  • heat sinks are held on a first side of the semiconductor devices arranged in a plane by a first common holding element, on a second side of the semiconductor devices arranged in a plane are held by a second common holding element.
  • FIG. 1 schematically shows an exemplary embodiment of a semiconductor component 1.
  • the semiconductor component 1 is connected by means of a bonding layer 3 to a cooling body 5, in particular to a surface area of the cooling body 5.
  • the surface area 2 of the heat sink 5 forms in this embodiment, a contact surface, can be transmitted via the heat from the semiconductor device 1 via the bonding layer 3 to the heat sink 5.
  • the heat sink 5 is solid cylindrical in this embodiment.
  • the heat sink 5 has a cylindrical outer surface, which is perpendicular to the surface Chen area 2 extends.
  • the surface area 2 forms in this embodiment, a partial surface of an end face of the cylindrical heat sink 5, wherein the end face extends perpendicular to a longitudinal axis 40 of the heat sink 5.
  • the semiconductor component 1 has an electrical connection formed on one side, which is connected to an external connection 16.
  • the semiconductor component 1 also has a further electrical connection, which is formed by a surface region of the semiconductor component 1, which is thermally connected by means of the bonding layer 3 to the surface region, in particular the contact surface 2 of the cooling body 5.
  • the thermally conductive connection between the semiconductor device 1 and the heat sink 5 via the bonding layer 3 is also formed electrically conductive in this embodiment.
  • the joining layer 3 is, for example, a solder, in particular a solder comprising tin, silver or additionally lead.
  • the joining layer 3 may be formed, for example, by means of soft soldering, by means of sintering or by means of diffusion soldering.
  • the surface area 2 of the heat sink 5 is coated, for example, with a metal layer that differs from a material of the heat sink 5.
  • the metal layer is configured to facilitate soldering.
  • the material of the heat sink 5 is for example copper.
  • the metal layer is, for example, an alloy, in particular an alloy comprising silver or additionally a further noble metal.
  • the semiconductor device 1 is pressed onto the joining layer by means of a pressure, for example between 30 and 40 megapascals.
  • the joining layer comprises the solder which, depending on the pressure, overcomes a yield point and remains below a solidus temperature.
  • the solidus temperature refers to a temperature of an alloy, wherein the alloy is at a temperature less than the solidus temperature in solid phase.
  • the heat sink 5 is enclosed at least on a longitudinal section along the longitudinal axis 40 by an annular holding element 7.
  • the annular holding element 7 forms a press fit, which is formed, the heat sink 5 at a thermal expansion, caused by a temperature increase of the heat sink 5, to tightly enclose so that the heat sink 5 is prevented in a radially outward thermal expansion.
  • the heat sink can be inserted into a cavity of the holding element, for example, as follows:
  • the heat sink 5 has, for example, at room temperature, a larger cross-sectional diameter than the cross-sectional diameter of the cylindrical cavity, which is enclosed by the annular, in this embodiment, a hollow cylinder-shaped holding member 7.
  • the cooling body 5 can be cooled for insertion into the cylindrical cavity of the retaining element 7, and be introduced after a caused by the cooling shrinkage of the diameter in the space enclosed by the holding member cavity.
  • the diameter of the heat sink 5 can be selected such that the agreement of the diameter of the heat sink 5 with the diameter of the
  • the heat sink 5 has a connection 17, via which the semiconductor component 1 can be electrically contacted.
  • the semiconductor component 1 is a rectifier diode in this exemplary embodiment.
  • FIG. 2 schematically shows a plan view of the arrangement already shown in FIG. 1, comprising the semiconductor component 1, the heat sink 5 and the holding element 7. Also shown is a section line 25 which runs transversely to the longitudinal axis 40 and the section through the arrangement shown in FIG clarifies.
  • Figure 3 shows schematically an embodiment of an arrangement in which the semiconductor device 1 is contacted by the heat sink 5 already shown, and in addition by another heat sink 6 thermally conductive.
  • an electrical connection of the semiconductor component 1 which forms an electrical connection to an electrode of the semiconductor component 1, by means of the electrically conductive and thermally conductive bonding layer 3 with the heat sink 5, and there connected to the surface area 2 of the heat sink 5.
  • the electrical connection of the semiconductor component 1 forms a surface region, which lies opposite a further surface region of the semiconductor component 1.
  • the further surface area forms the further electrical connection, which, unlike in FIG. 1, is connected to a surface region 20 of the further heat sink 6 by means of a further joining layer 4.
  • the bonding layer 4 is formed in this embodiment by a solder, so that the further connection of the semiconductor device 1 is thermally conductive and electrically contacted by the heat sink 6 via the joining layer.
  • the heat sink 6 is like the heat sink 5 solid and cylindrical.
  • the heat sink 6 is formed in this embodiment of copper.
  • the heat sink 6 is firmly enclosed along a longitudinal section along the longitudinal axis 40 by an annular holding element 9.
  • the heat sink 5 is firmly enclosed by a ring-shaped holding element 7 along a longitudinal section.
  • Retaining elements 7 and 9 are formed in this embodiment of Invar steel.
  • the Invar steel has in this embodiment iron and 35 to 36% nickel.
  • the Invar steel 5% cobalt have, the heat sink is in the region of an end portion which is the end portion with the surface area 2 opposite, connected to a further heat sink 1 1.
  • Heatsink 1 1 has formed for fluid guiding cavities, of which a cavity 19 is exemplified. Heat from the semiconductor component 1, in particular a loss heat generated in the semiconductor component 1, can thus be transmitted via the bonding layer 3, the area region 2, via the cooling body 5 to the cooling body 1 1 and via the cooling body 1 1 to one in the cavity
  • the fluid is, for example, water.
  • the heat sink 5 and the heat sink 1 1 are connected to each other thermally conductive.
  • the heat sink 6 is connected to a heat sink 10 in the region of an end section, which is opposite to the surface region 20.
  • the heat sink 10 is formed in this embodiment as an air heat exchanger and has for this purpose on cooling fins.
  • the heat sink 10 is thermally conductively connected to the heat sink 6.
  • the heat sink 10 and 1 1 are screwed together in this embodiment for generating a frictional connection by means of connecting rods 12 and 13.
  • a press fit is formed, by means of which the heat sink 10 presses along the longitudinal axis 40 onto the heat sink 6, and thus presses the heat sink 6 via the joining layer 4 against the semiconductor component 1.
  • the heat sink 1 1 presses along the longitudinal axis 40 against the heat sink 5, so that the heat sink 5 presses against the semiconductor device 1 via the bonding layer 3.
  • the semiconductor device 1 is so - similar to a sandwich composite - between the
  • Heat sinks 5 and 6 pressed.
  • the heat sink 10 may - in contrast to Figure 3 - additionally or independently of the cooling fins for fluid guiding as the heat exchanger 1 1 may be formed.
  • FIG. 4 schematically shows an exemplary embodiment of a variant of the semiconductor component shown in FIG. 3, which is in each case heat-conductively and electrically contacted by the heat sink 5 and the heat sink 6.
  • the cooling body 5 and the cooling body 6 are firmly enclosed by a holding element 8 of hollow-cylindrical design. Between an outer surface of the cylindrically shaped cooling element 6 and an inner surface of the holding element 8, an electrically insulating layer 15 is formed. As a result, the cooling element 6 and the cooling element 5 can not be short-circuited via the retaining element 8.
  • a first electrical connection of the semiconductor component 1 is connected via the bonding layer 4 to the cooling body 6 in an electrically conductive and thermally conductive manner.
  • a further electrical connection of the semiconductor component 1 is connected via the bonding layer 3 to the heat sink 5 in a heat-conducting and electrically conductive manner.
  • FIG. 5 schematically shows an exemplary embodiment of an arrangement comprising a plurality of semiconductor components, each of which - as shown in FIG. 3 - are contacted by two cooling elements in a heat-conducting and electrically conductive manner.
  • semiconductor device 1 which is electrically conductive and thermally conductive in operative contact with the heat sink 5 and the heat sink 6.
  • the cylindrical cooling element 5 is arranged in this embodiment in a hollow cylinder-shaped opening of the retaining element 21.
  • the holding element 21 is formed in this embodiment as a solid plate, in particular In var steel plate.
  • the cylindrical cooling element 6 is arranged in a hollow cylinder-shaped opening of a holding element 22.
  • the holding element 22 is - like the holding element 21 - formed as a solid plate or solid block, in particular Invar steel.
  • the plate-shaped or block-shaped holding elements 21 and 22 each have for each heat sink, which for electrical see and thermally conductive contacting a semiconductor element is formed, an opening, which is formed according to the cooling element.
  • the apertures are arranged opposite one another in the holding elements 21 and 22, so that the cooling elements accommodated in the apertures at least longitudinally in section for the purpose of pressing in the semiconductor components face one another.
  • the plate-shaped holding elements 21 and 22 are respectively screwed together by means of the plates 21 and 22 carried out by bolts 26, 27, 28 and 29, so that the plate-shaped holding elements 21 and 22 are pressed against each other.
  • an end face in particular the surface area of the heat sink enclosed by the plate-shaped holding element 21 of an end face, in particular pressed against the surface area of the heat sink enclosed by the plate-shaped holding member 21, wherein between each surface region of the heat sink enclosed by the holding element 22 and the corresponding surface areas arranged by the holding element 21 heat sink a semiconductor device is arranged.

Abstract

L'invention concerne un composant à semi-conducteur. Le composant à semi-conducteur comprend au moins un corps de refroidissement, au moins une zone surfacique du corps de refroidissement étant reliée de manière thermoconductrice au composant à semi-conducteur. Selon l'invention, le corps de refroidissement est entouré au moins en partie par au moins un élément de retenue. De préférence, l'élément de retenue présente une dilatation thermique inférieure à celle du corps de refroidissement.
PCT/EP2012/065980 2011-08-26 2012-08-16 Composant à semi-conducteur comprenant un corps de refroidissement WO2013030001A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102011081687.9 2011-08-26
DE102011081687A DE102011081687A1 (de) 2011-08-26 2011-08-26 Halbleiterbauelement mit einem Kühlkörper
DE102011081670.4 2011-08-26
DE102011081670 2011-08-26

Publications (1)

Publication Number Publication Date
WO2013030001A1 true WO2013030001A1 (fr) 2013-03-07

Family

ID=47664942

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/065980 WO2013030001A1 (fr) 2011-08-26 2012-08-16 Composant à semi-conducteur comprenant un corps de refroidissement

Country Status (2)

Country Link
DE (1) DE102011081687A1 (fr)
WO (1) WO2013030001A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022200301A1 (de) 2022-01-13 2023-07-13 Robert Bosch Gesellschaft mit beschränkter Haftung Werkstoff, Verfahren zur Herstellung eines Werkstoffs, Bauteil sowie Verwendung des Werkstoffs und Bauteils

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB878100A (en) * 1957-07-31 1961-09-27 Siemens Ag Improvements in or relating to semi-conductor rectifiers of the p-n junction type
GB975827A (en) * 1960-03-24 1964-11-18 Siemens Ag A semi-conductor arrangement
DE1273072B (de) * 1961-05-10 1968-07-18 Siemens Ag Massiver Kuehlkoerper fuer ein Halbleiterbauelement
DE3143335A1 (de) * 1981-10-31 1983-05-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleitervorrichtung
EP0124029A2 (fr) * 1983-04-29 1984-11-07 Siemens Aktiengesellschaft Circuit à module bien refroidissable, portant un composant électrique
US4586075A (en) * 1981-06-24 1986-04-29 Robert Bosch Gmbh Semiconductor rectifier
US4802532A (en) * 1986-01-24 1989-02-07 British Telecommunications Public Limited Company Heat sink
US4918571A (en) * 1987-03-31 1990-04-17 Amp Incorporated Chip carrier with energy storage means
US5099550A (en) * 1990-11-05 1992-03-31 Mi Proprietary Clamp for attachment of a heat sink
US5920458A (en) * 1997-05-28 1999-07-06 Lucent Technologies Inc. Enhanced cooling of a heat dissipating circuit element
DE10214311A1 (de) * 2002-03-28 2003-10-09 Marconi Comm Gmbh Kühlanordnung für ein elektronisches Bauelement
US20040177947A1 (en) * 2002-03-29 2004-09-16 Krassowski Daniel W. Optimized heat sink using high thermal conducting base and low thermal conducting fins
DE102004059986A1 (de) * 2004-02-17 2005-09-15 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Zusammengesetzte Wärmesenkenanordnung mit niedriger thermischer Belastung
EP1729342A1 (fr) * 2004-03-18 2006-12-06 Hitachi, Ltd. Tableau thermoconducteur et sa m thode de fabrication
US20070139895A1 (en) * 2005-11-04 2007-06-21 Reis Bradley E LED with integral thermal via
DE102007037297A1 (de) * 2007-08-07 2009-02-19 Continental Automotive Gmbh Schaltungsträgeraufbau mit verbesserter Wärmeableitung
DE102008004140A1 (de) * 2008-01-14 2009-07-16 Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd., Shenzhen Wärmeableitvorrichtung
WO2010030307A1 (fr) * 2008-09-11 2010-03-18 Applied Nanotech, Inc. Radiateur thermique composé d’une combinaison d'un complexe graphite-métal et d'un matériau extrudé à base d'aluminium
WO2011081249A1 (fr) * 2010-01-04 2011-07-07 Wavenics Inc. Structure de module de boîtier pour dispositif de haute puissance à substrat métallique et son procédé de fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1001269A (fr) * 1960-09-30 1900-01-01
US6114048A (en) * 1998-09-04 2000-09-05 Brush Wellman, Inc. Functionally graded metal substrates and process for making same

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB878100A (en) * 1957-07-31 1961-09-27 Siemens Ag Improvements in or relating to semi-conductor rectifiers of the p-n junction type
GB975827A (en) * 1960-03-24 1964-11-18 Siemens Ag A semi-conductor arrangement
DE1273072B (de) * 1961-05-10 1968-07-18 Siemens Ag Massiver Kuehlkoerper fuer ein Halbleiterbauelement
US4586075A (en) * 1981-06-24 1986-04-29 Robert Bosch Gmbh Semiconductor rectifier
DE3143335A1 (de) * 1981-10-31 1983-05-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleitervorrichtung
EP0124029A2 (fr) * 1983-04-29 1984-11-07 Siemens Aktiengesellschaft Circuit à module bien refroidissable, portant un composant électrique
US4802532A (en) * 1986-01-24 1989-02-07 British Telecommunications Public Limited Company Heat sink
US4918571A (en) * 1987-03-31 1990-04-17 Amp Incorporated Chip carrier with energy storage means
US5099550A (en) * 1990-11-05 1992-03-31 Mi Proprietary Clamp for attachment of a heat sink
US5920458A (en) * 1997-05-28 1999-07-06 Lucent Technologies Inc. Enhanced cooling of a heat dissipating circuit element
DE10214311A1 (de) * 2002-03-28 2003-10-09 Marconi Comm Gmbh Kühlanordnung für ein elektronisches Bauelement
US20040177947A1 (en) * 2002-03-29 2004-09-16 Krassowski Daniel W. Optimized heat sink using high thermal conducting base and low thermal conducting fins
DE102004059986A1 (de) * 2004-02-17 2005-09-15 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Zusammengesetzte Wärmesenkenanordnung mit niedriger thermischer Belastung
EP1729342A1 (fr) * 2004-03-18 2006-12-06 Hitachi, Ltd. Tableau thermoconducteur et sa m thode de fabrication
US20070139895A1 (en) * 2005-11-04 2007-06-21 Reis Bradley E LED with integral thermal via
DE102007037297A1 (de) * 2007-08-07 2009-02-19 Continental Automotive Gmbh Schaltungsträgeraufbau mit verbesserter Wärmeableitung
DE102008004140A1 (de) * 2008-01-14 2009-07-16 Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd., Shenzhen Wärmeableitvorrichtung
WO2010030307A1 (fr) * 2008-09-11 2010-03-18 Applied Nanotech, Inc. Radiateur thermique composé d’une combinaison d'un complexe graphite-métal et d'un matériau extrudé à base d'aluminium
WO2011081249A1 (fr) * 2010-01-04 2011-07-07 Wavenics Inc. Structure de module de boîtier pour dispositif de haute puissance à substrat métallique et son procédé de fabrication

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