WO2013021876A1

WO2013021876A1 - Position detection device

Info

Publication number: WO2013021876A1
Application number: PCT/JP2012/069521
Authority: WO
Inventors: 明宏桐原; 石田　真彦; 泰信中村; 健一内田; 英治齊藤
Original assignee: 日本電気株式会社; 国立大学法人東北大学
Priority date: 2011-08-09
Filing date: 2012-07-25
Publication date: 2013-02-14
Also published as: JPWO2013021876A1

Abstract

A position detection device includes: a magnetic body layer having magnetization; an electroconductive film containing a material having spin orbit interaction; and a position information input unit. With the information input unit, when the temperature in the magnetic body layer is modulated and a spin Seebeck effect is induced, an electrical field is generated locally in the electroconductive film, and the temperature modulation position is detected from the resulting change in potential.

Description

Position detection device

The present invention relates to an apparatus for detecting a position where heat is generated.

Elements that can detect two-dimensional position information are used in various devices such as user interfaces such as touch panels, information about sensors and cameras, and image acquisition devices. It is considered to be an increasingly important point of contact with space.
For example, with respect to the touch panel, many methods such as a resistive film method, a capacitance method, and an infrared method have been proposed and demonstrated.
In a resistive film type touch panel, an upper conductive film and a lower conductive film are arranged close to each other, and a standby state is applied with a bias voltage applied to one of them. Here, when pressure is applied by touch from the outside, the upper conductive film and the lower conductive film come into contact with each other at the touched point and energize. Therefore, the coordinates are determined by measuring the potential at that point. Can do.
In the capacitive touch panel, the electrode or conductive film disposed on the panel is kept in a standby state in a state where a driving voltage is appropriately applied. Here, when the panel is touched with a finger or the like, this causes a change in capacitance. Therefore, the touched point can be detected by reading a voltage change accompanying the change at multiple points.
In an infrared touch panel, an infrared light emitting element (LED) is arranged at one end on the panel, and an infrared light receiving element (phototransistor) is arranged at the other end in an array, and the apparatus is kept waiting in a state where infrared rays are continuously scanned. . Here, when a finger or the like approaches from the outside, the infrared rays are blocked by this, and the phototransistor at the corresponding position is turned off, so that the touched point can be detected.
As described later,

Patent Documents

1 and 2 disclose a heat / spin current conversion element and a spintronics device using the spin Seebeck effect and the like that are also used in the present invention.
Patent Document 3 discloses an example of a resistive film type touch panel. Non-Patent Document 1 discloses spin Seebeck theory.

JP 2009-130070 A JP 2009-295824 A JP 2010-055453 A

However, in the touch panel of the resistance film type, the capacitance type, the infrared type, etc., the standby power is large because the probe driving means such as bias voltage application or optical scanning is required to detect the position. Become. For this reason, use is restricted in situations where power supply is difficult. Even when batteries are used, maintenance and management burdens such as replacement are inevitable. In situations where future use is expected in various scenes, such as sensor networks and ubiquitous terminals, whether indoors or outdoors, there is a need for position detection means that do not require a power source or incorporate an effective power generation function.
An object of the present invention is to provide a position detection device that does not require an external power supply.

A position detection device according to an aspect of the present invention includes a magnetic layer having magnetization, a metal film including a material having spin-orbit interaction, and a position information input unit. The position information input unit inputs position information by modulating the effective temperature in the magnetic layer and inducing a spin Seebeck effect.
Specifically, a local temperature gradient is generated in the magnetic layer by locally heating (cooling) a part of the magnetic layer using the position information input unit, and the spin driven thereby By reading the current (spin Seebeck effect) from the thermoelectromotive force induced in the metal film, the two-dimensional coordinates of the place where heat generation (endotherm) occurs are specified. Thereby, position detection becomes possible.
Specific examples of the position information input unit include a heating (or cooling) unit, an electromagnetic wave irradiation unit, a frictional heat generation unit, a pressure application unit, a local cooling unit, and a magnetic characteristic modulation unit.

According to the present invention, since position input is performed by external heat or the like, a position detection device that does not require an external power source can be provided by using body temperature, environmental heat, or the like. Thereby, application to a touch panel, an image sensor, etc. of low standby power by simple composition is attained. In addition, it is possible to use a coating process, a printing process, etc., and it is suitable for large area mounting on a low cost substrate.

FIG. 1 is a diagram for explaining the principle of the spin Seebeck effect in a thermoelectric conversion element.
FIG. 2 is a diagram for explaining the principle of the position detection device according to the present invention and is a diagram for explaining a standby state.
FIG. 3 is a diagram for explaining the operation of the spin Seebeck effect when the entire surface of the position detection device is heated (a) and when a part of the position detection device is heated (b).
FIG. 4 is a diagram for explaining the first embodiment of the position detection apparatus according to the present invention.
FIG. 5 is a diagram for explaining a two-dimensional position determination procedure in the position detection apparatus according to the present invention.
FIG. 6 is a diagram for explaining a temperature rise distribution when a point defined by (x, y) = (3, 5) is heated in the position detection device according to the present invention.
FIG. 7 is a diagram for explaining an operation example of the position detection apparatus according to the first embodiment of the present invention.
FIG. 8 is a diagram for explaining another operation example of the position detection apparatus according to the first embodiment of the present invention.
FIG. 9 is a diagram for explaining another mounting method according to the first embodiment of the present invention.
FIG. 10 is a diagram illustrating Example 1 which is a specific example of the position detection device according to the first embodiment of the present invention.
FIG. 11 is a diagram illustrating Example 1b which is a specific example of the position detection device according to the first embodiment of the present invention.
FIG. 12 is a diagram for explaining a second embodiment of the position detection apparatus according to the present invention.
FIG. 13 is a diagram for explaining another mounting method according to the second embodiment of the present invention.
FIG. 14 is a diagram illustrating Example 2 which is a specific example of the position detection device according to the second embodiment of the present invention.
FIG. 15 is a diagram for explaining a third embodiment of the position detection apparatus according to the present invention.
FIG. 16 is a diagram illustrating Example 3 which is a specific example of the position detection device according to the third embodiment of the present invention.
FIG. 17 is a view for explaining a fourth embodiment of the position detection apparatus according to the present invention.
FIG. 18 is a diagram illustrating Example 4 which is a specific example of the position detection device according to the fourth embodiment of the present invention.
FIG. 19 is a diagram for explaining a fifth embodiment of the position detection apparatus according to the present invention.
FIG. 20 is a diagram illustrating Example 5 which is a specific example of the position detection device according to the fifth embodiment of the present invention.
FIG. 21 is a view for explaining a sixth embodiment of the position detection apparatus according to the present invention.
FIG. 22 is a diagram for explaining a seventh embodiment of the position detection apparatus according to the present invention.
FIG. 23 is a diagram illustrating Example 7 which is a specific example of the position detection device according to the seventh embodiment of the present invention.
FIG. 24 is a view for explaining an eighth embodiment of the position detecting apparatus according to the present invention.
FIG. 25 is a diagram illustrating Example 8 which is a specific example of the position detection device according to the eighth embodiment of the present invention.
FIG. 26 is a view for explaining a ninth embodiment of the position detecting apparatus according to the present invention.
FIG. 27 is a diagram illustrating Example 9 which is a specific example of the position detection device according to the ninth embodiment of the present invention.

The position detection device of the present invention is a device that identifies a heated spot on a plane or a spot that generates heat on a plane, and uses a spin Seebeck effect that generates a thermoelectromotive force from a temperature gradient. The position detection device of the present invention has a position detection element (thermoelectric conversion unit) based on the spin Seebeck effect in any of the embodiments described later.
Further, the present invention provides a position detection system (thermoelectric conversion unit) and a position detection system that is provided separately from the position detection element and includes a heating unit that heats an arbitrary place on the plane of the thermoelectric conversion unit. Proposed is a position detection device having an energy mode interface unit that is formed integrally with a unit and receives various forms of energy to generate heat at an arbitrary place on a plane.
[First Embodiment: Heating Position Detection Device]
(principle)
The position detection apparatus of the present invention is an apparatus for specifying a two-dimensional coordinate of a heat generation portion, and uses a spin Seebeck effect that generates a thermoelectromotive force from a temperature gradient.
First, FIG. 1 shows a basic configuration of a thermoelectric conversion element using the spin Seebeck effect shown in Patent Document 1 or the like. This thermoelectric conversion element includes a magnetic layer 101 having a magnetization M, formed on a substrate 100, and a metal film (conductive film) 102 disposed thereon. When a temperature gradient in a perpendicular direction (direction perpendicular to the substrate surface) is applied to such a thermoelectric conversion element in the z direction in the figure, a spin current is induced at the interface between the metal film 102 and the magnetic layer 101. Is done. By converting this spin current into an electric electromotive force by the reverse spin Hall effect in the metal film 102, “thermoelectric conversion that generates a thermoelectromotive force from a temperature gradient” becomes possible.
According to the microscopic spin Seebeck theory shown in Non-Patent Document 1, the spin current Js induced at the metal film / magnetic material interface (interface between the metal film and the magnetic material) is “ It has been found that it is driven by the temperature difference ΔTme = (Tm−Te) between the electron temperature Te ”of the metal film and the“ magnon temperature Tm ”. Here, the magnon temperature Tm corresponds to a parameter representing the intensity of the thermal motion of the spin. Thereby, the spin current Js is proportional to the temperature difference ΔTme as follows. Note that ez is a unit vector in the perpendicular direction.
Js ∝ ΔTme ez = (Tm−Te) ez
As shown in FIG. 1A, in a thermal equilibrium state where the entire thermoelectric conversion element is at a uniform temperature, the electron temperature Te and the magnon temperature Tm are always equal (electron-magnon temperature difference ΔTme = 0), and the spin current is driven. Not. Therefore, no electromotive force is generated in the metal film 102.
On the other hand, as shown in FIG. 1B, the upper surface (metal film side) of the thermoelectric conversion element is uniformly heated and a temperature difference ΔT is applied between the upper surface and the bottom surface of the thermoelectric conversion element. . At this time, the electron temperature Te and the magnon temperature Tm are subjected to temperature modulation by different mechanisms through non-local interaction with the temperature gradient distribution generated in the surroundings, resulting in a finite electron-magnon temperature difference at the interface near the heating part. ΔTme = (Tm−Te) ≠ 0 is generated.
Therefore, the interface spin current Js is pumped from the magnetic layer 101 to the metal film 102 using this temperature difference ΔTme as a drive source.
The above is the microscopic driving mechanism of the spin Seebeck effect described above.
This thermally driven spin current Js is converted into an electric field _EISHE by the spin Hall effect in the metal film 102, thereby generating a thermoelectromotive force V between the end portions of the metal film 102. Here, the relationship between the electric field _EISHE , the spin current Js, and the magnetization M is given by the following equation.
E _ISHE = (θ _SH ρ) Js × M / | M |
Here, θ _SH is the spin Hall angle (corresponding to the conversion efficiency between current and spin current), and ρ represents the sheet resistance of the metal film. As this equation shows, the thermally induced electric field E _ISHE occurs in a direction perpendicular to both the spin current Js and the magnetization M. Accordingly, the thermoelectromotive force V generated on the metal film surface also has a large value in the direction (y direction) perpendicular to the direction of the spin current and temperature gradient (z direction) and the magnetization direction (x direction).
In FIG. 1C, as an example of experimentally showing such an effect, generation of thermoelectromotive force in a metal film (Pt) / magnetic body (Bi: YIG thin film) structure formed on a synthetic quartz glass substrate. The state of is shown. An in-plane thermoelectromotive force V is observed in the metal film by applying a temperature gradient in the direction perpendicular to the surface of the thermoelectric conversion element. It has also been confirmed that the sign of the thermoelectromotive force V is reversed by reversing the magnetization M of the magnetic material with the external magnetic field H (horizontal axis of the graph).
In FIG. 1, it is assumed that the upper surface (the metal film side) is uniformly heated, but even when only a part of this surface is locally heated, a similar thermoelectromotive force can be observed. it can. This situation is shown in FIG. FIG. 2 is a diagram for explaining the principle of the position detection apparatus according to the present invention. In the case of FIG. 2, the electron temperature Te rises locally in the vicinity of the heated metal film / magnetic material interface, whereas the magnon temperature Tm, which is a spatial average, does not change greatly, and is locally limited. Electron-magnon temperature difference ΔTme is generated. As a result, the interface spin current Js is driven in this portion, and the electric field E _ISHE is locally induced.
The difference between the two situations (FIGS. 1 and 2) is illustrated in FIG. 3 using a one-dimensional equivalent circuit. Here, the thermoelectromotive force generated in the metal film due to the spin Seebeck effect by heating can be expressed as an equivalent circuit as a current source in parallel with the internal resistance of the metal film. When an electrical load is not connected to the position detection device or when the position detection device is connected to a high impedance electrometer, the end face may be considered open in terms of circuit.
When heating (applying a temperature gradient in the direction perpendicular to the surface) occurs on the entire position detection device as shown in FIG. 3A, it can be considered that such a current source is connected in series throughout the position detection device. That's fine. As a result, a potential difference is generated between both ends of all the internal resistances, and the electric field E _ISHE is observed over the entire position detection device.
On the other hand, as shown in FIG. 3B, when heating occurs only in a part of the position detection device, it may be considered that a current source is inserted only in this heating part in terms of an equivalent circuit. At this time, since a potential difference is generated only in the internal resistance parallel to the current source, the electric field _EISHE is locally generated only in this portion.
In this case as well, an electromotive force signal V is observed between the peripheral portions of the metal film 102 in FIG. 2, but as a difference from FIG. _1B , the location where the electric field E _ISHE is generated in the metal film 102 is local. Therefore, the thermoelectromotive force signal V is different depending on the point where the potential difference is measured (a spatial potential distribution is generated). In the present invention, position detection is performed using the locally generated spin Seebeck effect.
(Constitution)
FIG. 4A shows a basic structure of the position detection apparatus according to the first embodiment of the present invention. This position detection device includes a substrate 4, a magnetic layer 2 formed on the substrate 4, and a metal film 5 formed on the magnetic layer 2. A cover layer 3 may be formed on the metal film 5.
The material of the magnetic layer 2 includes (1) preventing heat from escaping (holding a temperature difference) and generating a highly sensitive electromotive force, and (2) suppressing high thermal diffusion and high position detection resolution. It is desirable to use a material with low thermal conductivity for the two purposes of realizing the above. Since heat conduction by conduction electrons is increased in a metal or semiconductor, a magnetic insulator having a smaller thermal conductivity is used in this embodiment. In particular, if a polycrystalline or nanocrystalline magnetic insulator material is used, phonon thermal conduction can be suppressed by effective phonon scattering, and higher sensitivity and resolution can be obtained.
As a specific material of the magnetic layer 2, for example, an oxide magnetic material such as garnet ferrite or spinel ferrite can be applied. Such a magnetic layer 2 is formed on the substrate 4 by a method such as an organic metal deposition method (MOD method), a sol-gel method, or an aerosol deposition method (AD method). By using these coating / printing-based film forming methods, it is possible to form a film on a large-area substrate at a time, and manufacturing with high productivity becomes possible.
Moreover, since a garnet film such as YIG has high transparency in a wide wavelength range, it is also suitable for application as a transparent position input device such as a touch panel. Further, when a magnetic material having a coercive force is used as the magnetic layer 2, an element that can operate even under a zero magnetic field can be obtained by initializing the magnetization direction once with an external magnetic field or the like.
The metal film 5 contains a material having a spin orbit interaction in order to extract a thermoelectromotive force using the inverse spin Hall effect. For example, a metal material such as Au, Pt, Pd, or Ir having a relatively large spin orbit interaction or an alloy material containing them is used. Further, a thermoelectromotive force can be taken out even with a material obtained by doping a low-cost, low-resistance metal such as Cu with a small amount (about 1 to 10%) of the impurity having the spin orbit interaction as described above.
Such a metal film 5 is formed by a method such as sputtering or vapor deposition. Further, it can also be produced by an ink jet method or a screen printing method.
Here, in order to convert the spin current into electricity efficiently and without waste, the thickness of the metal film 5 is preferably set to be at least equal to or greater than the spin diffusion length of the metal material. For example, it is desirable to set the thickness to 50 nm or more for Au and 10 nm or more for Pt. However, in an application in which the thermoelectromotive force is read as a voltage signal with an electrometer as in the present embodiment, it is desirable that the sheet resistance ρ is large. For this reason, the thinner the metal film 5, the larger the voltage output. Considering both of these, the thickness of the metal film 5 is most preferably about the spin diffusion length of the metal material. For example, the thickness is set to about 50 to 100 nm for Au, and about 10 to 30 nm for Pt.
The cover layer 3 is not particularly limited as long as it is a material and a structure that can protect the element (thermoelectromotive force generator). For example, if an organic resin material such as an acrylic resin or polyimide is used, the cover layer 3 can be produced by a printing and coating process. However, in applications where sensitivity is important, in order to effectively transmit the input heat to the magnetic layer 2, it is possible to protect the element even if the material has a high thermal conductivity in the perpendicular direction or the film thickness is small. It is desirable to use such a material, and the film thickness is desirably 200 μm or less.
The substrate 4 may be of any material or structure as long as it can support the magnetic layer 2 and the metal film 5. Further, it is not always necessary to have a plate shape. However, when the heat and temperature fluctuations flowing from the surrounding environment are large and the influence of noise and malfunction due to this is large, it is preferable to use a material having a small thermal conductivity or a structure having a sufficiently large thickness. More specifically, the thermal resistance in the direction perpendicular to the surface of the substrate 4 is designed to be sufficiently larger than the thermal resistance in the direction perpendicular to the surface of the other layers (magnetic layer 2 + cover layer 3). For example, as the substrate 4, an amorphous insulator such as glass or an organic resin material such as polyimide is used. It should be noted that the substrate 4 may be omitted under applications and usage environments where the magnetic layer 2 can be directly fixed and used stably.
(Operation)
Next, an operation method of the position detection device will be described. Here, as shown in FIG. 4B, one end g1 of the metal film 5 (here, the lower left in the figure) is connected to the ground (reference potential), and the metal film peripheral portion (x1 to x7, y1 to y7) with respect to this ground. The potentials (Vx1 to Vx7, Vy1 to Vy7) are kept waiting so that they can be measured and recorded by the position recording devices 11 and 12, respectively. A position recording device 13 for measuring and recording potentials (Vy1 ′ to Vy7 ′) is connected to peripheral portions (y1 ′ to y7 ′) on the opposite side of the metal film peripheral portions (y1 to y7). Each of the position recording devices 11 to 13 includes an electrometer.
Under a thermal equilibrium state where no temperature gradient is applied, no spin current is driven in the position detection device, so no thermoelectromotive force is generated. That is, the potential Vx1 = Vx2 =... = Vy7 = 0.
Here, as shown in FIG. 4A, when a part of the magnetic layer 2 is heated (or cooled) by some heating (or cooling) unit 10 from the outside, the temperature is locally modulated in this part, A finite electron-magnon temperature difference ΔTme occurs. As a result, a spin current due to the spin Seebeck effect is induced, and an electric field E _ISHE associated _therewith is locally generated in the metal film 5. The local electric field E _ISHE has the relationship of E _ISHE = (θ _SH ρ) Js × M / | M | described above, and is generated in a direction perpendicular to both the spin current Js and the magnetization M.
Although an electromotive voltage is generated at the peripheral portion of the metal film 5, the spatial distribution of the peripheral portion voltage is not uniform and depends on the two-dimensional position where the local electric field _EISHE is generated. Therefore, by measuring and recording this electromotive force with an external electrometer (position recording devices 11, 12, and 13), the two-dimensional coordinates of the position where heat is generated can be specified.
Thus, the heating (or cooling) unit 10 functions as a position information input unit (means). The same applies to the electromagnetic wave irradiation unit 35, the frictional heat generation unit 40, the pressure application unit 60, the local cooling unit 80, and the magnetic property modulation unit 90, which will be described in the following embodiments and examples.
Moreover, the heated two-dimensional position can be determined more accurately by switching the place of the ground and performing the same measurement. When the potential at the peripheral edge of the metal film is evaluated with reference to only one location (g1) in the metal film 5, the two-dimensional position may not be specified accurately depending on the heating location, as shown in FIG. On the other hand, for example, as shown in FIG. 4C, the ground is switched to the position of the lower right end g2 of the metal film 5, and the potentials (Vx1 to Vx7, Vy1 ′ to Vy7 ′) at the peripheral edge of the metal film. The position recording devices 11 and 13 measure and record again. In this way, more accurate position information can be determined by measuring the potential twice or more with reference to the ground points (g1, g2) at different positions.
The position of the ground (g1, g2) may be any place on the two-dimensional plane. Although FIG. 4 shows an example in which the end portions (lower left and lower right) of the square metal film 5 are grounded, the center portion of the metal film 5 may be used as ground.
(Specific operation example)
Next, a more specific operation example will be described. As a specific temperature rise distribution ΔT (x, y) due to the heat source, a Gaussian function like the following formula (1) is assumed.

That is, a situation is considered in which the temperature rises in the range of the extent c around the point (x, y) = (a, b).
An object of the present invention is to detect and specify the heating position (a, b) through measurement of the thermoelectromotive force accompanying the spin Seebeck effect.
Under such heating, the aforementioned electron-magnon temperature difference ΔTme produces a finite value in the heating section. Under the approximation that the magnon temperature Tm does not change significantly by local heating, the temperature difference ΔTme is proportional to the temperature rise distribution ΔT (x, y) as follows.
ΔTme = Tm (x, y) −Te (x, y) ∝ΔT (x, y)
Due to this temperature difference ΔTme, the spin current Js is driven, and a local electric field E _ISHE is induced in the metal film 5. As a result, the electromotive voltage Vn at the electromotive voltage measurement terminal n (n = x1 to x7, y1 to y7) provided at the peripheral edge portion of the position detection device is a line of the electric field E _ISHE from the ground terminal g1 to the electromotive voltage measurement terminal n. The integral is a value represented by the following formula (2).

The vector eg1 → n represents a unit vector from the ground terminal g1 to the electromotive voltage measurement terminal n.
From the above consideration, the electromotive voltage Vn at the electromotive voltage measurement terminal n (n = x1 to x7, y1 to y7) is greatly increased in the temperature rise distribution ΔT (x, y) between the ground g1 and the electromotive voltage measurement terminal n. Dependent.
Hereinafter, as a specific example, as shown in FIG. 6A, a two-dimensional coordinate system (range is 0 ≦ x, y ≦) where the point g1 grounded to the ground is the origin (x, y) = (0, 0). In 8), let us consider a situation in which heat is generated around (a, b) = (3, 5). Here, it is assumed that T0 = 10 and c = 1. In the following, in order to simplify the explanation, the influence of the reverse electric field due to charge accumulation is ignored.
FIG. 6B shows a temperature rise distribution ΔT on the connection line connecting the ground g1 and the electromotive voltage measurement terminal n at this time. As is apparent from these graphs, it can be seen that the temperature rise distribution with the ground g1 varies greatly depending on the location of the terminal for measuring the electromotive voltage (n = x1 to x7, y1 to y7). Naturally, the temperature rises more as the distance from the heating point (a, b) is smaller. The potential (thermoelectromotive force) Vn measured at the electromotive voltage measurement terminal n depends on the integral value of this temperature distribution.
FIG. 7A shows voltage values measured as Vx1 to Vx7 and Vy1 to Vy7 by the position recording devices 11 and 12 (the vertical axis is normalized by the maximum voltage value). As described above, the thermally induced potential Vn largely depends on the space to be measured (n = x1 to x7, y1 to y7).
In order to measure the two-dimensional position (a, b) more accurately, the ground position is switched and the measurement is performed again. In FIG. 7B, the ground position is switched from g1 to g2 (x, y) = (8, 0), and the potential Vn at the electromotive voltage measurement terminal n (n = x1 to x7, y1 ′ to y7 ′). The distribution of is measured again. From these two measurements, the two-dimensional position can be estimated more accurately.
For reference, as another example, FIG. 8 shows a space of the potential Vn when heating occurs at the two-dimensional position (a, b) = (6, 4). It can be seen that the Vn distribution of FIG. 8 is significantly different from the Vn distribution of FIG. The Vn distribution is determined by the point (a, b) where the heating occurs.
In this manner, the two-dimensional position where heating has occurred can be identified from the potential distribution measured by the position recording devices 11, 12, and 13.
Anything can be used as the heating unit 10 (FIG. 4) as long as it has heat. Therefore, position information can be input with a finger having a body temperature, a pen whose tip is heated, or the like. Since it is not necessary to apply a bias such as a voltage during standby, it can be used for a user interface with extremely low standby power.
Note that the operation principle of position input in this embodiment is to locally change the temperature distribution of the magnetic layer 2, and therefore a cooling unit may be used instead of the heating unit 10. For example, the temperature distribution can be locally changed by attaching the position detection device to a high-temperature heat source such as an IT device and heating it in advance, and bringing a cooling unit at room temperature from the outside.
Although FIG. 4 shows the element structure in which the metal film 5 / magnetic layer 2 / substrate 4 are stacked in this order from the top, the stacking order of the metal film 5 and the magnetic layer 2 may be reversed. That is, as shown in FIG. 9, a laminated structure of magnetic layer 2 / metal film 5 / substrate 4 may be employed in order from the top. In the laminated structure as shown in FIG. 9, since a magnetic insulator material having a small thermal conductivity can be used as the magnetic layer 2, when heated by the heating unit 10 from above, the horizontal (x, y) direction The spread of heat is suppressed to a small level and the spatial resolution is improved.

[Example 1]
FIG. 10 shows Example 1 as a specific example of the first embodiment of the present invention. In Example 1, the magnetic layer 2 is described as Yttrium iron garnet (hereinafter referred to as Bi: YIG) in which a part of the Y site is replaced with Bi. The composition is BiY. ₂ Fe ₅ O ₁₂ ) Use a membrane. A Pt film is used for the metal film 5. Here, Bi: YIG film thickness t _m Is 100 nm, Pt film thickness t _e Is 15 nm.
Film thickness t for substrate 4 _s A quartz glass substrate of 500 μm is used, and the cover layer 3 has a film thickness t. _c A 100 μm synthetic sapphire plate is used. As the heating unit 10, a pen whose tip is heated to 40 ° C. is used.
The magnetic layer 2 made of Bi: YIG is formed by an organometallic decomposition method (MOD method). As the solution, a MOD solution manufactured by Kojundo Chemical Laboratory Co., Ltd. is used. In this solution, a metal raw material having an appropriate molar ratio (Bi: Y: Fe = 1: 2: 5) is dissolved in acetate at a concentration of 3%. This solution is applied onto a quartz glass substrate by spin coating (rotation speed: 100 rpm, rotation for 30 s), dried on a hot plate at 150 ° C. for 5 minutes, and then sintered in an electric furnace at a high temperature of 720 ° C. for 14 hours. As a result, Bi: YIG (BiY) having a film thickness of about 100 nm is formed on the quartz glass substrate. ₂ Fe ₅ O ₁₂ ) A film is formed.
Thereafter, a metal film 5 made of Pt is formed by sputtering. Finally, a cover layer 3 is covered with a synthetic sapphire plate having a thickness of 100 μm to protect the metal film / magnetic layer.
(Another manufacturing method of Example 1 (Example 1b))
FIG. 11 shows another embodiment 1b. In this example 1b, the same film thickness t as in example 1 _s On a quartz glass substrate (substrate 4) of 500 μm, the thickness t _m A 10 μm Bi: YIG film (magnetic layer 2) is formed by an aerosol deposition (AD) method. For the metal film 5, an alloy material Cu1-xIrx in which Ir is mixed with Cu is used. Bi: YIG fine particles having a diameter of 300 nm are used as Bi: YIG raw materials formed by the AD method. The Bi: YIG fine particles are packed in an aerosol generation container, and the substrate 4 is fixed to a holder in the film forming chamber. In this state, a pressure difference is generated between the film formation chamber and the aerosol generation container, whereby Bi: YIG fine particles are drawn into the film formation chamber and sprayed onto the substrate through the nozzle. The fine particles are crushed and recombined by the collision energy at the substrate at this time, and Bi: YIG polycrystal is formed on the substrate 4. By scanning the substrate stage two-dimensionally, the magnetic material layer 2 of uniform Bi: YIG is formed on the substrate 4 with a film thickness of 10 μm.
Then, after polishing the surface of the magnetic layer 2 as necessary, the metal film 5 has a thickness t obtained by doping copper with a small amount of iridium. _e A 100 nm alloy material Cu1-xIrx is formed by screen printing. Here, an alloy material Cu0.99Ir0.01 doped with 1% Ir is used. As an ink (paste) for screen printing, a powder obtained by atomizing Cu0.99Ir0.01 alloy into a particle size of about 50 nm and mixed with a binder is used.
Finally, an organic solution in which polymethyl methacrylate is dissolved as an acrylic material is applied on these, and dried at a high temperature of about 100 ° C. to obtain a thickness t _c A cover layer 3 of 100 μm is prepared.
[Second Embodiment: Position Detection Device Having Two Metal Films (Conductive Film)]
In the first embodiment, in order to increase the position specifying accuracy, potential measurement is performed twice with different positions (g1, g2) as grounds. However, this method requires ground switching, so it is difficult to perform high-speed position measurement.
In the second embodiment, as shown in FIG. 12A, an upper metal film 21 is formed on the magnetic layer 2, and a lower metal film 22 is formed below the magnetic layer 2. Among these, as shown in FIG. 12B, the upper metal film 21 has the g1 (0, 0) point grounded to the ground, and the peripheral edges (x1 to x7) and (y1 to y7) of the upper metal film 21. The potentials (Vx1 to Vx7) and (Vy1 to Vy7) are measured by the position recording devices 11 and 12 connected to the terminal (1). On the other hand, as shown in FIG. 12C, the lower metal film 22 has the g2 (8, 0) point grounded to the ground, and the peripheral edges (x1 to x7) and (y1 'to y7) of the lower metal film 22 The potentials (Vx1 ′ to Vx7 ′) and (Vy1 ′ to Vy7 ′) are measured by the position recording devices 14 and 13 connected to the terminal ′).
In this way, by preparing two metal films and simultaneously measuring the electromotive force induced by them, the two-dimensional position where heat is generated can be accurately detected at once without switching the ground. It can be measured.
In the second embodiment, the metal films are stacked on the upper and lower sides of one magnetic layer 2, but as shown in FIG. 13, the upper metal film 21, the upper magnetic layer 23, and the spacer layer 25 are sequentially arranged from the top. In addition, by adopting a laminated structure of the lower metal film 22, the lower magnetic layer 24, and the substrate 4, a structure in which two magnetic layers are used and a metal film is disposed on each side may be used. The cover layer 3 is formed as necessary. As shown in FIGS. 13B and 13C, the connection of the position recording devices 11 and 12 to the upper metal film 21 and the connection of the position recording devices 14 and 13 to the lower metal film 22 are shown in FIGS. Same as).
(Example 2)
Example 2 is shown in FIG. 14 as a specific example of the second embodiment of the present invention.
In FIG. 14, the magnetic layer 2 has a thickness t _m 100 nm Bi: YIG is used. Each of the upper metal film 21 and the lower metal film 22 has a thickness t. _e 15 nm Pt is used. Film thickness t for substrate 4 _s A quartz glass substrate of 500 μm is used as the cover layer 3 with a film thickness t. _c A 100 μm synthetic sapphire plate is used. These mountings are performed in the same manner as in the first embodiment. The connection of the position recording devices 11 and 12 to the upper metal film 21 and the connection of the position recording devices 14 and 13 to the lower metal film 22 may be the same as in FIGS.
{Third to sixth embodiments}
In the first embodiment, the heating unit 10 is used to input the position information. However, if a mechanism for generating heat by an external trigger is built in the position detection device, the position information can be input by other means. It becomes possible. In fact, heat is the most common form of energy, and various energies such as electromagnetic waves and vibration often end up as heat. Furthermore, heat is also generated by chemical reactions or phase changes between substances. Therefore, if the detection device shown in the first embodiment is applied, various types of sensors can be configured. Hereinafter, application to an electromagnetic wave sensor, a contact (friction heat) detection sensor, a gas sensor, a pressure sensor, and the like will be described.
[Third Embodiment: Position Detection Device by Electromagnetic Wave Detection]
FIG. 15 shows a perspective view of an electromagnetic wave sensor as an application example of the position detection device as a third embodiment of the present invention. The difference from the position detection apparatus according to the first embodiment is that an electromagnetic wave absorption film 31 is newly arranged and formed on the metal film / magnetic layer via an insulating layer 32 made of an insulating material.
As shown in FIG. 15, when the electromagnetic wave 30 is locally irradiated from the outside by the electromagnetic wave irradiation unit 35 to the electromagnetic wave sensor having such a structure, the electromagnetic wave 30 is absorbed by the electromagnetic wave absorbing film 31 and generates heat at that position. Occurs. By measuring and recording the thermoelectromotive force due to this heat generation with the position recording device (X position recording device) 11 and the position recording device (Y position recording device) 12, it is possible to specify the two-dimensional position irradiated with the electromagnetic wave. it can. The connection configuration of the position recording devices 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
Here, as the electromagnetic wave absorbing film 31, a material that absorbs the electromagnetic wave 30 well and generates heat is used. The specific material selection depends on the wavelength. For example, a gold black film (gold ultrafine particle film) or a nickel-chromium alloy film can be used for infrared rays, and CIGS (Cu (In, Ga) Se ₂ ) A film or a fullerene film can be used. In addition, a carbon film made of carbon black, carbon nanotube, or the like is suitable for film formation by coating and printing, and can be used in a wide wavelength range from infrared to visible.
The insulating layer 32 serves as an insulating layer so as not to disturb the thermoelectromotive force generation operation in the metal film 5. When the electromagnetic wave absorbing film 31 itself is an insulator, the insulating layer 32 may be omitted.
A material that transmits the electromagnetic wave 30 as much as possible is used for the cover layer 3. If necessary, only a specific wavelength can be detected by providing a wavelength filter above the cover layer 3. In addition, by providing a partial reflecting mirror on the upper part of the cover layer 3 and optimizing the thickness of the cover layer 3, a resonator that functions for a specific wavelength can be configured, and the electromagnetic wave detection sensitivity can be improved. .
In applications where sensitivity is important, the electromagnetic wave absorbing film 31, the insulating layer 32, and the cover layer 3 have a thermal conductivity in a direction perpendicular to the surface in order to effectively transmit the input heat to the magnetic layer 2. It is desirable to use a material having a large thickness, or a material that can protect the detection element even if the film thickness is small, and each film thickness is desirably 100 μm or less. As a more desirable form that achieves both sensitivity and resolution, materials and structures that exhibit high heat conduction in the direction perpendicular to the surface and low heat conduction in the in-plane direction (direction parallel to the substrate surface) are employed in these layers. . Specifically, it is anisotropic by using a material in which fillers such as carbon fiber oriented in the direction perpendicular to the surface are embedded, or by using a structure in which the material is divided (incised) for each pixel in the surface. A realistic heat transfer structure.
Based on the above principle, application to an image sensor or the like that does not require an external power supply is possible with a very simple configuration.
(Example 3)
FIG. 16 shows Example 3 as a specific example of the third embodiment of the present invention. In Example 3, the magnetic layer 2 has a thickness t. _m 100 nm Bi: YIG, metal film 5 has a thickness t _e A 15 nm Pt film is used. As the electromagnetic wave 30, infrared rays having a wavelength of about 10 μm are used. As the electromagnetic wave absorbing film 31, a carbon black film that can efficiently absorb electromagnetic waves of this wavelength is used. Film thickness t _ir Is 200 nm. Film thickness t for substrate 4 _s A quartz glass substrate of 500 μm is used as the insulating layer 32 with a film thickness t. _sp A 200 nm polyimide layer is used as the cover layer 3 with a film thickness t. _c Each 100 μm acrylic resin is used.
These are produced as follows. First, a Pt / Bi: YIG layer is formed by the same method as in Example 1 described above. Thereafter, a polyimide layer (insulating layer 32) is formed thereon by applying a raw material solution and drying. Further thereon, a carbon black film having a film thickness of 200 nm, which is the electromagnetic wave absorbing film 31, is applied and formed on the entire surface by spin coating of raw materials. Finally, an organic solution in which polymethyl methacrylate is dissolved as an acrylic material is applied on these, and dried at a high temperature of about 100 ° C. to form a cover layer 3 having a thickness of 100 μm. The connection configuration of the position recording devices 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
By utilizing the infrared sensor having such a configuration, a monitoring infrared camera, a thermography, or the like can be configured with a very simple configuration.
[Fourth Embodiment: Position Detection Device by Friction Heat Detection]
FIG. 17 shows a perspective view of a contact detection sensor (or frictional heat sensor) which is an application example of the position detection device as the fourth embodiment of the present invention. This sensor uses a frictional heat generating film 41 instead of the cover layer 3 in the position detection device shown in the first embodiment. As in the third embodiment, an insulating layer may be inserted between the frictional heat generating film 41 and the metal film 5 as necessary. The connection configuration of the position recording devices 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
When the frictional heat generating unit 40 is brought into contact with the contact detection sensor having such a structure by locally rubbing a part of the frictional heat generating film 41 as shown in FIG. Heat is generated at the contact portion. By detecting this heat generation by the same configuration and operating principle as the position detection apparatus described in the first embodiment, the two-dimensional position where contact has occurred can be measured and recorded.
The surface of the frictional heat generation film 41 is appropriately processed so that heat is generated by contact with the frictional heat generation unit 40. Further, in order to efficiently transmit the heat generated on the surface to the magnetic layer 2, it is desirable that the frictional heat generating film 41 is made as thin as possible within a range that functions as a protective film or is made of a material having high thermal conductivity.
By such a contact detection sensor, an external power source is unnecessary and a user interface with zero standby power is realized. For example, it is possible to input characters by rubbing the frictional heat generating film 31 with a pen.
The method for generating frictional heat is not limited to the method shown here. As another form, for example, the frictional heat generating film 41 is configured by a mechanical part that generates frictional heat by pressure or vibration from the outside. Detection device) can also be configured.
(Example 4)
FIG. 18 shows Example 4 as a specific example of the fourth embodiment of the present invention. In Example 4, the magnetic layer 2 has a thickness t. _m 1 μm Bi: YIG, metal film 5 has a thickness t _e A 100 nm Cu0.99Ir0.01 film is used. As the frictional heat generating film 41, synthetic sapphire having a rough surface with small irregularities is used, and the film thickness t _fr Is 100 nm. As the frictional heat generating unit 40, a pen whose tip is coated with alumina is used. Film thickness t for substrate 4 _s When a 500 μm quartz glass substrate is used and an insulating layer is inserted, polyimide resin is used as a material. The connection configuration of the position recording devices 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
The Cu0.99Ir0.01 / Bi: YIG film is formed by the same method as in Example 1b. A synthetic sapphire plate having moderate unevenness of the order of several hundred μm is placed thereon as the frictional heat generation film 41.
[Fifth Embodiment: Position Detection Device by Gas Detection]
FIG. 19 is a perspective view of a floating body sensor as an application example of the position detection device as the fifth embodiment of the present invention. The difference from the first embodiment is that a floating body adsorption film 51 for floating body adsorption is newly formed and arranged on the metal film / magnetic layer via an insulating layer 32 which is an insulating material. is there.
As the floating body detection film 51, for example, a known chemical material such as a catalyst that generates a chemical reaction accompanied by heat generation when a specific floating body 50 is adsorbed can be used. In addition, as the floating body detection film | membrane 51, the film | membrane containing the porous body containing a catalyst can also be used. The insulating layer 32 plays a role of an insulating layer so as not to disturb the thermoelectromotive force generation operation in the metal film 5, but is not necessarily required depending on the floating body detection film 51 used. Further, depending on the gas, the magnetic layer 2 or the metal film 5 can be directly used as a floating body detection film.
When a floating body 50 such as a gas comes from the outside with respect to the floating body sensor having such a structure, heat generated by a chemical reaction occurs at a point adsorbed on the floating body detection film 51, and a part of the magnetic layer 2 is formed. Heated. By detecting this heat with the same configuration and operating principle as the position detection apparatus described in the first embodiment, the two-dimensional position where the floating body is adsorbed can be measured and recorded. Therefore, the connection configuration of the position recording apparatuses 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
Thereby, a large area floating body sensor or the like that does not require an external power source can be realized with a simple configuration. Actually, the floating body 50 is not limited to gas, but may be liquid or solid (dust). Also, the principle of floating body detection is not particularly limited as long as heat is generated by floating body adsorption.
(Example 5)
FIG. 20 shows Example 5 as a specific example of the fifth embodiment of the present invention. In Example 5, the magnetic layer 2 has a thickness t. _m 100 nm Bi: YIG, metal film 5 has a thickness t _e 15 nm Pt is used. These are the film thickness t _s A film is formed on a 500 μm quartz glass substrate 4 in the same manner as in the first embodiment. In the fifth embodiment, hydrogen is assumed as the floating body 50, and Pt used as the metal film 5 also serves as the floating body detection film 51 as a catalyst for detecting hydrogen gas.
[Sixth Embodiment: Position Detection Device Based on Pressure Detection]
FIG. 21 shows a position detection apparatus (Example 6) according to the sixth embodiment of the present invention.

The magnetic layer 2 / metal film 5 is stacked in place of the stacking order of the upper heating layer 61 formed and arranged between the substrate 4 and the metal film 5 with a plurality of dot spacers 53 therebetween. The lower heating layer 62 is provided. A cover layer 3 is formed on the magnetic layer 2 / metal layer 5 as necessary.
Here, the upper heat generating layer 61 and the lower heat generating layer 62 are made of a combination of materials that generate heat when in contact with each other. The dot spacer 53 serves to spatially isolate the upper heat generating layer 61 and the lower heat generating layer 62 during standby. As a material of the dot spacer 53, a material having a low thermal conductivity such as an organic resin is used.
In such a position detection device, when pressure from the pressure application unit 60 is applied from the outside, the upper heat generating layer 61 is distorted downward, and the upper heat generating layer 61 and the lower heat generating layer 62 are partially in contact with each other. As a result, local heat is generated only in the contacted portion, so that this heat is detected by the same configuration and operating principle as the position detection device described in the first embodiment, so that a two-dimensional position where pressure is applied. Can be measured and recorded. The connection configuration of the position recording devices 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
As the principle of heat generation due to the contact between the upper heat generating layer 61 and the lower heat generating layer 62, various things can be used as follows.
For example, two materials that chemically react can be used for the upper heating layer 61 and the lower heating layer 62. As a result, a chemical reaction occurs at the place where they come into contact, and local reaction heat is generated.
Further, the apparatus is made to stand by with an external bias voltage applied between the upper heat generating layer 61 and the lower heat generating layer 62 so that a current flows only at a place where the upper heat generating layer 61 and the lower heat generating layer 62 are in contact with each other. Good. In this case, ohmic heat generated by the electrical resistance of this portion can be used for position input.
Furthermore, heat can be generated by using a pressure (or strain) when the upper heat generating layer 61 is pressed against the lower heat generating layer 62 as a trigger. For example, it is possible to detect the position by measuring the reaction heat, latent heat, etc. generated by the chemical reaction or phase change caused by the pressure application by the same method.
In addition, as shown in the following embodiments and examples, frictional heat generated when the upper heat generating layer 61 and the lower heat generating layer 62 come into contact with each other can also be used.
{Seventh to ninth embodiments}
In the embodiments so far, the position to which heat is applied from the outside is detected through the thermoelectromotive force generated in the metal film while waiting in an equilibrium state where there is no external heat or thermal gradient. By using such a detection device, an interface that can be used with zero standby power can be used even in the absence of an external power source. However, in these methods, since it is necessary to use a means for heating the apparatus from the outside, the use is limited in situations where this is difficult.
On the other hand, there are various steady heat sources and steady temperature gradients around us, such as body temperature, displays, and IT equipment. By effectively utilizing such a temperature gradient, a useful interface can be configured without using external heating.
In the following seventh to ninth embodiments, the position detection device in a situation where a steady heat source or a steady temperature gradient can be used in advance will be described.
[Seventh Embodiment: Position Detection Device Based on Pressure Detection]
In FIG. 22, the perspective view of the position detection apparatus which is the 7th Embodiment of this invention is shown. Similar to the sixth embodiment, in the seventh embodiment, the stacking order of the magnetic layer 2 / metal layer 5 is changed from the upper side to the lower side instead of the stacking order of the metal layer 5 / magnetic layer 2. Adopt and position detection by applying pressure. As a difference from the sixth embodiment, in the seventh embodiment, a heat source 58 having a temperature higher (or lower) than room temperature is used instead of the substrate 4 in the first embodiment. As such a heat source, various things, such as a display, the side surface of IT apparatus, the wall and window of a building where sunlight hits, can be used. A cover layer 3 is formed on the magnetic layer 2 / metal layer 5 as necessary.
Next, the operation principle will be described. In the seventh embodiment, the magnetic layer 2 (upper side) / metal layer 5 (lower side) are disposed above the heat source 58 via a plurality of dot spacers 53. During standby, the magnetic layer 2 / metal layer 5 and the heat source 58 are spatially separated by the dot spacer 53. As a material of the dot spacer 53, a material having a low thermal conductivity such as an organic resin is used. Thus, heat transfer between the magnetic layer 2 / metal layer 5 and the heat source 58 is small during standby, and different temperature distributions can be obtained.
In this situation, as shown in FIG. 22, when the pressure applied by the pressure application unit 70 is applied to a certain point from the outside, the heat source 58 and the magnetic layer 2 / metal layer 5 come into contact with each other at this point, Large heat transfer occurs. As a result, the magnetic layer 2 / metal layer 5 is locally heated, and the accompanying change in temperature distribution is detected from the change in thermoelectromotive force in the metal film 5 in the same manner as in the first embodiment. Can do. Therefore, the connection configuration of the position recording apparatuses 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
(Example 7)
FIG. 23 shows Example 7 as a specific example of the seventh embodiment of the present invention. In FIG. 23, as the heat source 58, a display surface whose temperature is set to room temperature or higher (for example, 40 ° C.) is used. The cover layer 3 has a thickness t _c A 100 μm acrylic layer (or synthetic sapphire plate) is used. The magnetic layer 2 has a thickness t _m 100 nm Bi: YIG, metal film 5 has a thickness t _e 15 nm Pt is used. These are formed on the acrylic layer (on the lower side in the drawing) in the same manner as in Example 1 described above. Then, this is arranged on the upper part of the heat source 58 via a dot spacer 53 made of acrylic urethane resin and having a diameter of 10 μm.
During standby, the Pt / Bi: YIG / acrylic layer and the heat source 58 are spatially separated by an acrylic urethane resin dot spacer 53. At this time, the heat transfer between them is small. These are brought into contact with each other by being pressed from the outside by a pressure application pen, which is the pressure application unit 70, and cause a large heat transfer. The connection configuration and the ground switching configuration of the X position recording device as the position recording device 11 and the Y position recording device as the position recording devices 12 and 13 may be the same as those in the first embodiment.
[Eighth Embodiment: Position Detection Device by Contact Detection]
FIG. 24 is a perspective view of a position detection apparatus according to the eighth embodiment of the present invention. Although the apparatus form is almost the same as that of the first embodiment, the magnetic layer 2 / metal layer 5 is stacked in this order from the top, and instead of the substrate 4, it has a temperature higher (or lower) than room temperature. A heat source 58 is used. As a result, a steady temperature gradient in the direction perpendicular to the surface is generated in the position detection device due to the influence of the heat source 58 during standby. A cover layer 3 is formed on the magnetic layer 2 / metal layer 5 as necessary.
In this state, when the local cooling unit 80 at room temperature is pressed, heat dissipation (cooling) is promoted locally in this part, so that the temperature gradient applied to the magnetic layer / metal layer is locally large. Thus, the electric field accompanying the spin current increases. Position information can be estimated by detecting a change in potential distribution associated therewith by the same method as in the first embodiment. Therefore, the connection configuration of the position recording apparatuses 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
(Example 8)
FIG. 25 shows Example 8 as a specific example of the eighth embodiment of the present invention. In Example 8, the magnetic layer 2 has a thickness t. _m 1 μm Bi: YIG, metal film 5 has a thickness t _e A 100 nm Cu0.99Ir0.01 film is used. As the heat source 58, a display surface whose temperature is set to room temperature or higher (for example, 40 ° C.) is used. The cover layer 3 has a thickness t _c A 100 μm acrylic layer (or synthetic sapphire plate) is used. Further, a room temperature pen (cooling pen) is used as the local cooling unit 80.
[Ninth Embodiment: Position Detection Device by Detection of Magnetic Field]
In the embodiments described so far, the local heating of the magnetic layer from the outside, that is, the position detection method using the temperature modulation has been described. However, in the situation where the steady temperature gradient can be used, the temperature from the outside is heated. Instead of modulating, the position detection application is also possible by modulating the magnon temperature Tm (an effective temperature parameter indicating the intensity of thermal motion of magnon) with various other degrees of freedom.
FIG. 26 shows such a position detection device as the ninth embodiment. The basic configuration of the position detection apparatus according to the ninth embodiment is substantially the same as that of the eighth embodiment, and utilizes a steady spin current in a situation where a temperature gradient exists. In this case as well, the magnetic layer 2 / metal layer 5 is laminated in order from the top, and a heat source 58 having a temperature higher (or lower) than room temperature is used instead of the substrate 4. A cover layer 3 is formed on the magnetic layer 2 / metal layer 5 as necessary. The only difference in configuration from the eighth embodiment is that a magnetic characteristic modulation unit 90 is used instead of the local cooling unit 80.
As the magnetic characteristic modulating unit 80, a local electric field / magnetic field, a local pressure, and an electromagnetic wave can be used. As a result, the effective potential felt by magnon is effectively modulated, and as a result, the magnon temperature Tm described above is modulated. As a result, the difference between the electron temperature Te and the magnon temperature Tm changes locally, so that the positional information can be acquired by observing the change in the thermoelectromotive force in the metal film 5. The connection configuration of the position recording devices 11, 12, and 13 and the ground switching configuration may be the same as those in the first embodiment.
Example 9
FIG. 27 shows Example 9 as a specific example of the eighth embodiment using magnon modulation by a local magnetic field.
In Example 9, Bi: YIG is used for the magnetic layer 2 and Pt is used for the metal film 5. These are produced on the acrylic layer (lower side in the drawing) to be the cover layer 3 by the same method as in the first embodiment. As the heat source 58, a display surface whose temperature is set to room temperature or higher (for example, 40 ° C.) is used. The cover layer 3 has a thickness t _c A 100 μm acrylic layer is used. As the magnetic property modulation unit 90, a pen having a ferrite magnet at the tip is used. Thereby, the position input can be performed by modulating the magnon temperature Tm.
[Effect of Example]
With the structures described in the above embodiments and examples, a position detection device that does not require an external power supply is possible, and a low standby power touch panel, an image sensor, and the like with a simple configuration can be realized. In addition, it is possible to use a coating process, a printing process, etc., and it is suitable for mounting on a large area on a low-cost substrate.
This application claims the priority on the basis of Japanese application Japanese Patent Application No. 2011-173785 for which it applied on August 9, 2011, and takes in those the indications of all here.

DESCRIPTION OF SYMBOLS 2 Magnetic material layer 3 Cover layer 4 Substrate 5 Metal film 10 Heating part 11-14 Position recording device 21 Upper metal film 22 Lower metal film 23 Upper magnetic material layer 24 Lower magnetic material layer 25 Spacer layer 30 Electromagnetic wave 31 Electromagnetic wave absorption film 32 Insulation Layer 40 Friction heat generation part 41 Friction heat generation film 50 Floating body 51 Floating body detection film 53 Dot spacer 60 Pressure application part 61 Upper heat generation layer 62 Lower heat generation layer 70 Pressure application part 80 Local cooling part 90 Magnetic characteristic modulation part

Claims

A position detection device including a magnetic layer having magnetization, a conductive film including a material having spin-orbit interaction, and position information input means,
The position information input means generates an electric field locally in the conductive film by modulating the effective temperature in the magnetic layer and inducing a spin Seebeck effect, and determines the position of the temperature modulation from the accompanying potential change. A position detection device characterized by detecting.
2. The position information input unit according to claim 1, further comprising a heating or cooling unit as the position information input unit, wherein the position information is input by locally heating or cooling the magnetic layer with the heating or cooling unit. Position detection device.
The position detection device according to claim 1 or 2, wherein a plurality of terminals for taking out a voltage are provided at a peripheral portion of the conductive film.
4. The conductive film according to claim 3, wherein the conductive film has a ground point grounded to a ground, and an electromotive voltage induced between the ground point and the plurality of terminals is measured. Position detection device.
The position detecting device according to claim 4, wherein at least two conductive films are arranged in parallel with each other, and each has a ground terminal at a different two-dimensional position.
6. The position detection device according to claim 1, further comprising an electromagnetic wave absorbing film in addition to the laminated structure of the conductive film and the magnetic layer, wherein the position information input unit includes an electromagnetic wave. A position detection apparatus comprising electromagnetic wave irradiation means for locally irradiating a light source.
5. The position detection device according to claim 1, further comprising a frictional heat generation film in addition to the laminated structure of the conductive film and the magnetic layer, as the position information input unit. A position detection device comprising frictional heat generating means for locally generating frictional heat.
5. The position detection device according to claim 1, further comprising a floating body detection layer in addition to the laminated structure of the conductive film and the magnetic layer, wherein the position information input unit includes: A position detection device using a floating body containing gas.
The position according to any one of claims 1 to 4, wherein an effective temperature distribution is modulated by the position information input means in a state where a temperature gradient is applied to the magnetic layer. Detection device.
The position information input means changes the magnon effective temperature in the magnetic layer by modulating the magnon motion, and inputs the position information. The position detection device described.