WO2013019045A3 - 구형 반도체 소자를 이용한 광전 변환 장치 및 이의 제조 방법 - Google Patents

구형 반도체 소자를 이용한 광전 변환 장치 및 이의 제조 방법 Download PDF

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Publication number
WO2013019045A3
WO2013019045A3 PCT/KR2012/006055 KR2012006055W WO2013019045A3 WO 2013019045 A3 WO2013019045 A3 WO 2013019045A3 KR 2012006055 W KR2012006055 W KR 2012006055W WO 2013019045 A3 WO2013019045 A3 WO 2013019045A3
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
semiconductor
conversion apparatus
spherical
semiconductor device
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PCT/KR2012/006055
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English (en)
French (fr)
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WO2013019045A2 (ko
Inventor
이계웅
조양휘
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지에스칼텍스(주)
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Application filed by 지에스칼텍스(주) filed Critical 지에스칼텍스(주)
Publication of WO2013019045A2 publication Critical patent/WO2013019045A2/ko
Publication of WO2013019045A3 publication Critical patent/WO2013019045A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

구형 반도체 소자를 이용한 광전 변환 장치에 관한 발명으로서, 광전 효율이 증가된 구형 반도체 소자를 이용한 광전 변환 장치 및 그 제조 방법에 대하여 개시한다. 본 발명에 따른 광전 변환 장치는 구 형상의 제1반도체, 상기 제1반도체 표면의 일부를 노출시키며 커버하는 제1패시베이션층 및 상기 제1패시베이션층 상에 형성된 제2반도체층을 구비하는 구 형상의 광전 변환 소자와, 상기 광전 변환 소자가 설치되는 복수의 홈 부를 갖고, 상기 홈 부의 바닥에는 상기 제1반도체의 일부를 노출시키면서 상기 광전 변환 소자가 고정될 수 있는 홀(hole)이 형성된 지지체와 상기 제1반도체의 노출부와 상기 지지체의 이면에 형성되는 제2패시베이션층 및 상기 제2패시베이션층 상에 형성되는 후면전계(BSF, Back Surface Field)층을 포함하여, 패시베이션 층에 따른 계면 결함 농도 감소와 후면전계 형성으로 인해 광전 변환 장치 전체의 직렬 저항을 감소시키고 광전 효율이 증가되는 장점이 있다.
PCT/KR2012/006055 2011-07-29 2012-07-30 구형 반도체 소자를 이용한 광전 변환 장치 및 이의 제조 방법 WO2013019045A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0075968 2011-07-29
KR1020110075968A KR20130013989A (ko) 2011-07-29 2011-07-29 구형 반도체 소자를 이용한 광전 변환 장치 및 이의 제조 방법

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WO2013019045A2 WO2013019045A2 (ko) 2013-02-07
WO2013019045A3 true WO2013019045A3 (ko) 2013-04-04

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PCT/KR2012/006055 WO2013019045A2 (ko) 2011-07-29 2012-07-30 구형 반도체 소자를 이용한 광전 변환 장치 및 이의 제조 방법

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KR (1) KR20130013989A (ko)
WO (1) WO2013019045A2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102197811B1 (ko) * 2019-12-11 2021-01-04 (주)소프트피브이 실리콘 파티클을 포함하는 태양 전지 유닛의 형성 방법, 이를 이용하여 제작되는 태양 전지 유닛 및 이를 포함하는 회로 키트

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000068831A (ko) * 1997-08-27 2000-11-25 나가다 죠스게 구상반도체 디바이스와 그 제조방법 그리고 구상반도체 디바이스
JP2006229025A (ja) * 2005-02-18 2006-08-31 Clean Venture 21:Kk 光電変換装置の製造方法および光電変換装置
KR20110073090A (ko) * 2009-12-23 2011-06-29 한국과학기술원 실리콘 구립체를 이용한 태양전지 제조방법 및 이에 의하여 제조된 태양전지

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000068831A (ko) * 1997-08-27 2000-11-25 나가다 죠스게 구상반도체 디바이스와 그 제조방법 그리고 구상반도체 디바이스
JP2006229025A (ja) * 2005-02-18 2006-08-31 Clean Venture 21:Kk 光電変換装置の製造方法および光電変換装置
KR20110073090A (ko) * 2009-12-23 2011-06-29 한국과학기술원 실리콘 구립체를 이용한 태양전지 제조방법 및 이에 의하여 제조된 태양전지

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KR20130013989A (ko) 2013-02-06

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