WO2013015745A1 - Couche mince de cu-zn-sn-s/se et ses procédés de fabrication - Google Patents

Couche mince de cu-zn-sn-s/se et ses procédés de fabrication Download PDF

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Publication number
WO2013015745A1
WO2013015745A1 PCT/SG2012/000270 SG2012000270W WO2013015745A1 WO 2013015745 A1 WO2013015745 A1 WO 2013015745A1 SG 2012000270 W SG2012000270 W SG 2012000270W WO 2013015745 A1 WO2013015745 A1 WO 2013015745A1
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WO
WIPO (PCT)
Prior art keywords
thin film
water
nanoparticles
sulfide
mixture
Prior art date
Application number
PCT/SG2012/000270
Other languages
English (en)
Inventor
Zhenggang LI
Yeng Ming Lam
Subodh Mhaisalkar
Original Assignee
Nanyang Technological University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanyang Technological University filed Critical Nanyang Technological University
Publication of WO2013015745A1 publication Critical patent/WO2013015745A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Abstract

L'invention porte sur un procédé de fabrication d'une couche mince de cuivre-zinc-étain-X (Cu-Zn-Sn-X), X représentant le soufre (S), le sélénium (Se) ou un mélange de soufre et de sélénium (S, Se). Le procédé comporte a) la formation d'une dispersion comportant des nanoparticules de CupX (1 ≤ p ≤ 2), des nanoparticules de ZnX et des nanoparticules de SnXq (1 ≤ p ≤ 2) dans un agent dispersant ; b) le dépôt de la dispersion sur un substrat pour former une couche mince de précurseur ; c) le chauffage du substrat comportant la couche mince de précurseur dans une atmosphère inerte à une température dans la plage allant d'environ 300°C à environ 600°C pour former la couche mince de Cu-Zn-Sn-X. L'invention porte également sur une couche mince de Cu-Zn-Sn-X obtenue par le procédé et sur un dispositif comportant la couche mince de Cu-Zn-Sn-X. L'invention porte également sur des données de photoréponse d'une couche mince de Cu-Zn-Sn-X obtenue selon un mode de réalisation.
PCT/SG2012/000270 2011-07-25 2012-07-25 Couche mince de cu-zn-sn-s/se et ses procédés de fabrication WO2013015745A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161511229P 2011-07-25 2011-07-25
US61/511,229 2011-07-25

Publications (1)

Publication Number Publication Date
WO2013015745A1 true WO2013015745A1 (fr) 2013-01-31

Family

ID=47601372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SG2012/000270 WO2013015745A1 (fr) 2011-07-25 2012-07-25 Couche mince de cu-zn-sn-s/se et ses procédés de fabrication

Country Status (1)

Country Link
WO (1) WO2013015745A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015185834A1 (fr) 2014-06-05 2015-12-10 Imra Europe Sas Procédé de préparation de couche mince d'absorbeur a base de sulfure(s) et séléniures(s) de cuivre, zinc et étain, couche mince recuite et dispositif photovoltaïque obtenus
WO2017067405A1 (fr) * 2015-10-19 2017-04-27 陈柏颕 Structure de film à énergie solaire, et procédé et appareil pour sa fabrication
CN109411553A (zh) * 2018-01-26 2019-03-01 宁波工程学院 一种低温制备铜锌硫纳米薄膜的方法及应用
CN110526281A (zh) * 2019-08-26 2019-12-03 浙江工业大学 一种合成二硫化锡的方法
CN110803952A (zh) * 2019-11-06 2020-02-18 刘俐 一种增产作物茎秆叶面重金属阻控富硒肥及其施用方法
CN114920283A (zh) * 2022-03-29 2022-08-19 中北大学 一种锌锡二元硫化物/碳纳米立方复合材料及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800263A (zh) * 2009-12-18 2010-08-11 湛江师范学院 一种铜锌锡硫薄膜太阳能电池吸收层的制备方法
WO2010135667A1 (fr) * 2009-05-21 2010-11-25 E. I. Du Pont De Nemours And Company Procédés pour préparer des films de sulfure de cuivre et d'étain et de sulfure de cuivre, de zinc et d'étain
JP2011129564A (ja) * 2009-12-15 2011-06-30 Fujifilm Corp 光電変換半導体膜を形成する塗布膜及びその製造方法、光電変換半導体膜、光電変換素子、及び太陽電池
WO2012061023A1 (fr) * 2010-10-25 2012-05-10 Imra America, Inc. Procédé sans vide pour fabrication d'une couche absorbante photovoltaïque
WO2012071287A1 (fr) * 2010-11-22 2012-05-31 E. I. Du Pont De Nemours And Company Encres et procédés de production d'un semiconducteur contenant du chalcogène

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010135667A1 (fr) * 2009-05-21 2010-11-25 E. I. Du Pont De Nemours And Company Procédés pour préparer des films de sulfure de cuivre et d'étain et de sulfure de cuivre, de zinc et d'étain
JP2011129564A (ja) * 2009-12-15 2011-06-30 Fujifilm Corp 光電変換半導体膜を形成する塗布膜及びその製造方法、光電変換半導体膜、光電変換素子、及び太陽電池
CN101800263A (zh) * 2009-12-18 2010-08-11 湛江师范学院 一种铜锌锡硫薄膜太阳能电池吸收层的制备方法
WO2012061023A1 (fr) * 2010-10-25 2012-05-10 Imra America, Inc. Procédé sans vide pour fabrication d'une couche absorbante photovoltaïque
WO2012071287A1 (fr) * 2010-11-22 2012-05-31 E. I. Du Pont De Nemours And Company Encres et procédés de production d'un semiconducteur contenant du chalcogène

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015185834A1 (fr) 2014-06-05 2015-12-10 Imra Europe Sas Procédé de préparation de couche mince d'absorbeur a base de sulfure(s) et séléniures(s) de cuivre, zinc et étain, couche mince recuite et dispositif photovoltaïque obtenus
FR3022074A1 (fr) * 2014-06-05 2015-12-11 Imra Europ Sas Procede de preparation de couche mince d'absorbeur a base de sulfure(s) et seleniures(s) de cuivre, zinc et etain, couche mince recuite et dispositif photovoltaique obtenus.
WO2017067405A1 (fr) * 2015-10-19 2017-04-27 陈柏颕 Structure de film à énergie solaire, et procédé et appareil pour sa fabrication
CN109411553A (zh) * 2018-01-26 2019-03-01 宁波工程学院 一种低温制备铜锌硫纳米薄膜的方法及应用
CN110526281A (zh) * 2019-08-26 2019-12-03 浙江工业大学 一种合成二硫化锡的方法
CN110526281B (zh) * 2019-08-26 2021-08-24 浙江工业大学 一种合成二硫化锡的方法
CN110803952A (zh) * 2019-11-06 2020-02-18 刘俐 一种增产作物茎秆叶面重金属阻控富硒肥及其施用方法
CN114920283A (zh) * 2022-03-29 2022-08-19 中北大学 一种锌锡二元硫化物/碳纳米立方复合材料及其制备方法
CN114920283B (zh) * 2022-03-29 2024-01-26 中北大学 一种锌锡二元硫化物/碳纳米立方复合材料及其制备方法

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