WO2013009083A3 - 전계 방출원 및 이를 적용하는 소자 및 그 제조방법 - Google Patents

전계 방출원 및 이를 적용하는 소자 및 그 제조방법 Download PDF

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Publication number
WO2013009083A3
WO2013009083A3 PCT/KR2012/005480 KR2012005480W WO2013009083A3 WO 2013009083 A3 WO2013009083 A3 WO 2013009083A3 KR 2012005480 W KR2012005480 W KR 2012005480W WO 2013009083 A3 WO2013009083 A3 WO 2013009083A3
Authority
WO
WIPO (PCT)
Prior art keywords
electric field
same
production method
emitting source
method therefor
Prior art date
Application number
PCT/KR2012/005480
Other languages
English (en)
French (fr)
Other versions
WO2013009083A2 (ko
Inventor
이철진
신동훈
신지홍
Original Assignee
고려대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고려대학교 산학협력단 filed Critical 고려대학교 산학협력단
Publication of WO2013009083A2 publication Critical patent/WO2013009083A2/ko
Publication of WO2013009083A3 publication Critical patent/WO2013009083A3/ko
Priority to US14/152,045 priority Critical patent/US9269522B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/24—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

전계 방출원은, 나노 크기의 전자 방출 물질을 포함하는 것으로 제1면과 그 반대 면인 제2면을 가지는 전자방출필름 그리고 상기 전자방출필름의 일단부를 고정하는 것으로 상기 전자방출필름의 제1면과 제2면에 각각 대응하는 제1블록과 제2블록을 포함하는 캐소드; 를 구비한다.
PCT/KR2012/005480 2011-07-11 2012-07-11 전계 방출원 및 이를 적용하는 소자 및 그 제조방법 WO2013009083A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/152,045 US9269522B2 (en) 2011-07-11 2014-01-10 Electric field emitting source, element using same, and production method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0068553 2011-07-11
KR1020110068553A KR101239395B1 (ko) 2011-07-11 2011-07-11 전계 방출원 및 이를 적용하는 소자 및 그 제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US14/152,045 Continuation US9269522B2 (en) 2011-07-11 2014-01-10 Electric field emitting source, element using same, and production method therefor

Publications (2)

Publication Number Publication Date
WO2013009083A2 WO2013009083A2 (ko) 2013-01-17
WO2013009083A3 true WO2013009083A3 (ko) 2013-03-07

Family

ID=47506702

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005480 WO2013009083A2 (ko) 2011-07-11 2012-07-11 전계 방출원 및 이를 적용하는 소자 및 그 제조방법

Country Status (3)

Country Link
US (1) US9269522B2 (ko)
KR (1) KR101239395B1 (ko)
WO (1) WO2013009083A2 (ko)

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KR102023004B1 (ko) * 2013-02-15 2019-09-19 한국전자통신연구원 전계 방출 전자원 및 그 제조 방법
USD757663S1 (en) * 2014-01-28 2016-05-31 Formosa Epitaxy Incorporation Light emitting diode chip
TWD164809S (zh) * 2014-01-28 2014-12-11 璨圓光電股份有限公司 發光二極體晶片之部分
TWD173888S (zh) * 2014-01-28 2016-02-21 璨圓光電股份有限公司 發光二極體晶片之部分
USD745474S1 (en) * 2014-01-28 2015-12-15 Formosa Epitaxy Incorporation Light emitting diode chip
TWD173883S (zh) * 2014-01-28 2016-02-21 璨圓光電股份有限公司 發光二極體晶片之部分
TWD173887S (zh) * 2014-01-28 2016-02-21 璨圓光電股份有限公司 發光二極體晶片之部分
USD745472S1 (en) * 2014-01-28 2015-12-15 Formosa Epitaxy Incorporation Light emitting diode chip
TWD163754S (zh) * 2014-01-28 2014-10-21 璨圓光電股份有限公司 發光二極體晶片之部分
CN106489186B (zh) * 2014-05-13 2018-08-24 三星电子株式会社 使用石墨烯的电子发射设备及其制造方法
USD772919S1 (en) 2014-10-23 2016-11-29 Visa International Service Association Display screen or portion thereof with animated graphical user interface
KR101686180B1 (ko) * 2015-02-11 2016-12-13 고려대학교 산학협력단 전자방출원, 어레이형 전자방출원, 전자방출소자 및 그 제조방법
US9680116B2 (en) * 2015-09-02 2017-06-13 International Business Machines Corporation Carbon nanotube vacuum transistors
CN106098503B (zh) * 2016-07-18 2018-08-21 电子科技大学 一种石墨烯带状电子注场发射冷阴极及其生产方法
KR101982289B1 (ko) 2017-09-21 2019-05-24 고려대학교 산학협력단 탄소나노튜브 전자방출원, 그 제조 방법 및 이를 이용하는 엑스선 소스
US10912180B2 (en) 2018-03-30 2021-02-02 Korea University Research And Business Foundation X-ray source apparatus and control method thereof
KR102188075B1 (ko) 2018-03-30 2020-12-07 고려대학교 산학협력단 엑스선 소스 장치 및 그 제어 방법
CN110875165A (zh) * 2018-08-30 2020-03-10 中国科学院微电子研究所 一种场发射阴极电子源及其阵列

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KR20000071254A (ko) * 1999-01-18 2000-11-25 니시무로 아츠시 카본 나노튜브의 필름화 방법, 그 방법에 의해 필름화된카본 나노튜브 및 이것을 이용한 전계 전자 방출원
KR20070062710A (ko) * 2005-12-13 2007-06-18 삼성에스디아이 주식회사 탄소나노튜브의 형성방법 및 이를 이용한 전계방출소자의제조방법

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JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
US5502314A (en) * 1993-07-05 1996-03-26 Matsushita Electric Industrial Co., Ltd. Field-emission element having a cathode with a small radius
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CN100543913C (zh) * 2005-02-25 2009-09-23 清华大学 场发射显示装置
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KR20070017758A (ko) * 2005-08-08 2007-02-13 삼성에스디아이 주식회사 전계방출 소자 및 그 제조방법
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000071254A (ko) * 1999-01-18 2000-11-25 니시무로 아츠시 카본 나노튜브의 필름화 방법, 그 방법에 의해 필름화된카본 나노튜브 및 이것을 이용한 전계 전자 방출원
KR20070062710A (ko) * 2005-12-13 2007-06-18 삼성에스디아이 주식회사 탄소나노튜브의 형성방법 및 이를 이용한 전계방출소자의제조방법

Also Published As

Publication number Publication date
KR101239395B1 (ko) 2013-03-05
US9269522B2 (en) 2016-02-23
KR20130007904A (ko) 2013-01-21
US20140191650A1 (en) 2014-07-10
WO2013009083A2 (ko) 2013-01-17

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