WO2012174544A2 - Current mode blixer with noise cancellation - Google Patents

Current mode blixer with noise cancellation Download PDF

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Publication number
WO2012174544A2
WO2012174544A2 PCT/US2012/042975 US2012042975W WO2012174544A2 WO 2012174544 A2 WO2012174544 A2 WO 2012174544A2 US 2012042975 W US2012042975 W US 2012042975W WO 2012174544 A2 WO2012174544 A2 WO 2012174544A2
Authority
WO
WIPO (PCT)
Prior art keywords
coupled
mixer
resistor
impedance
mixing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/042975
Other languages
English (en)
French (fr)
Other versions
WO2012174544A3 (en
Inventor
Vijay B. Rentala
Venkatesh Srinivasan
Srinath M. Ramaswamy
Baher S. Haroun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Texas Instruments Inc
Original Assignee
Texas Instruments Japan Ltd
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd, Texas Instruments Inc filed Critical Texas Instruments Japan Ltd
Priority to CN201280040113.3A priority Critical patent/CN103733513B/zh
Priority to JP2014516080A priority patent/JP6162109B2/ja
Publication of WO2012174544A2 publication Critical patent/WO2012174544A2/en
Publication of WO2012174544A3 publication Critical patent/WO2012174544A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1466Passive mixer arrangements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0001Circuit elements of demodulators
    • H03D2200/0023Balun circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14Balanced arrangements
    • H03D7/1425Balanced arrangements with transistors
    • H03D7/1441Balanced arrangements with transistors using field-effect transistors

Definitions

  • the invention relates generally to radio frequency (RF) circuitry and, more particularly, to a blixer.
  • RF radio frequency
  • FIG. 1 illustrates an example of a conventional blixer 100.
  • a blixer i.e., 100 is a circuit that combines a balun, low-noise amplifier (LNA) and an I/Q mixer.
  • blixer 100 generally comprises a balun-LNA core (which generally comprises NMOS transistors Ql and Q2, inductor L, capacitor CI, and resistor Rl) coupled to a switching quad or switching core (which generally comprises NMOS transistors Q3 through Q6 and resistor-capacitor (RC) networks 102-1 and 102-2).
  • an RF input signal is provided to the balun-LNA core (which also receives bias voltages VBIAS1 and VBIAS2).
  • transistors Q2 is n-times the size of transistor Ql
  • the transconductance gm2 of transistor Q2 is n-times the transconductance gmi of transistor Ql (or
  • the signals from balun-LNA core (which are g m i *ViN and gm2* i N ) are applied to low impedance nodes of the switching core so as to be mixed with a differential local oscillator signal LOP and LOM.
  • transistors Q4 and Q5 are n-times the side of transistors Q3 and Q6.
  • This blixer 100 can be noisy, and due to the stacking of the transistors Q1-Q6, the amount of head room available for signal swing can be severely limited, limiting achievable gain. Additionally, this headroom limitation due to the supply voltage also limits the linearity blixer 100. Thus, there is however a desire to improve the linearity and reduce the noise of this blixer 100.
  • a disclosed embodiment of the present invention provides an apparatus.
  • the apparatus comprises a transconductance circuit that receives an input signal and that generates a first amplified signal and a second amplified signal; and a mixing circuit having: a first mixer that is coupled to the transconductance circuit so as to receive the first amplified signal, wherein the first mixer mixes the first amplified signal with a mixing signal, wherein the mixing signal has a duty cycle that is a fraction of a local oscillator duty cycle; a second mixer that is coupled to the transconductance circuit so as to receive the second amplified signal, wherein the second mixer mixes the second amplified signal with the mixing signal; an first impedance network that is coupled each of the first and second mixers, wherein the first impedance network is adapted to have an feedback impedance; a second impedance network that is coupled each of the first and second mixers, wherein the second impedance network is adapted to have the feedback impedance; and a differential amplifier that is coupled to each imped
  • the mixing circuit further comprises a first capacitor that is coupled between the transconductance circuit and the first mixer; and a second capacitor that is coupled between the transconductance circuit and the second mixer.
  • the first impedance network further comprises: a first resistor that is coupled to the first mixer; a second resistor that is coupled in series with the first resistor, wherein a collective impedance of the first and second resistors is approximately equal to the feedback impedance, and wherein the second mixer is coupled to a node between the first and second resistors; and a first switch that is coupled in parallel to the first resistor.
  • the first impedance network further comprises: a third resistor that is coupled to the first mixer; a fourth resistor that is coupled in series with the third resistor, wherein a collective impedance of the third and fourth resistors is approximately equal to the feedback impedance, and wherein the second mixer is coupled to a node between the first and second resistors; and a second switch that is coupled in parallel to the first resistor.
  • the first impedance network further comprises a first resistor having the feedback impedance and wherein the second impedance network further comprises a second resistor having the feedback impedance.
  • the mixing circuit further comprises a dummy path that is coupled to second capacitor.
  • the differential amplifier further comprises a first differential amplifier, and wherein the dummy path further comprises: a third mixer that is coupled to the second capacitor; and a second differential amplifier that is coupled to the third mixer.
  • the fraction further comprises a first fraction
  • the mixing signal further comprises a first mixing signal
  • the third mixer mixes the second amplified signal with a second mixing signal having a duty cycle that is a second fraction of the local oscillator duty cycle.
  • the transistors from each of first and second mixers have a first size, and wherein the transistors from the third mixer have a second size.
  • an apparatus comprises: a transconductance circuit that generates a first amplified signal and a second amplified signal, wherein the transconductance circuit includes: a first current source having a first current; a second current source having a second current, wherein the second current is K-times larger than the first current; a first transistor that is coupled to the first current source and that receives a first bias voltage; a second transistor that is coupled to the first transistor and that receives an input signal and a second bias voltage; a third transistor that is coupled to the second current source and that receives first bias voltage; and a fourth transistor that is coupled to the third transistor and that receives the input signal and the second bias voltage; and a mixing circuit having: a first mixer that is coupled to the transconductance circuit so as to receive the first amplified signal, wherein the first mixer mixes the first amplified signal with a mixing signal, wherein the mixing signal has a duty cycle that is a fraction of a local oscillator duty cycle; a
  • transconductance circuit so as to receive the second amplified signal, wherein the second mixer mixes the second amplified signal with the mixing signal; an first impedance network that is coupled each of the first and second mixers, wherein the first impedance network is adapted to have an feedback impedance; a second impedance network that is coupled each of the first and second mixers, wherein the second impedance network is adapted to have the feedback impedance; and a differential amplifier that is coupled to each impedance network.
  • the transconductance circuit further comprises: a resistor that is coupled to the fourth transistor and that receives the second bias voltage; and a capacitor that is coupled to the fourth transistor and that receives the input signal.
  • FIG. 1 is a circuit diagram of a conventional blixer
  • FIGS. 2 through 4 are circuit diagrams of examples of blixers In an embodiment.
  • FIG. 2 illustrates an example blixer 200-1 implementing principles of the invention.
  • Blixer 200-1 generally comprises a transconductance circuit 202 and a mixing circuit 204-1.
  • the tranconductance circuit 202 generally receives the input signal VIN and generates amplified signals from the input signal VIN.
  • Mixing circuit 204-1 then can mix these amplified signals with a mixing signal LOF1 having a duty cycle that is a fraction (generally 50% or 25%) of a local oscillator signal so that differential amplifier 214 and impedance networks (generally resistors R7 and R8 and switch S2 or resistors R9 and R10 and switch SI) can generally perform noise cancellation or noise reduction.
  • the mixing is generally performed by mixers 210 and 212, which are typically passive mixers (which can, for example, be Gilbert cell mixers).
  • the transconductance circuit 202 generally uses two branches that each generate one of the amplified signals.
  • the input signal VIN is generally received at the source of NMOS transistor Q9 (which can biased by bias voltage VBIAS3 and generally has a transconductance g m 3), and, in combination with current source 206 (which can generate a current 10) and NMOS transistor Q7 (which can bias by bias voltage VBIAS4), transistor Q9 generates an amplified signal (which is generally VIN* g ⁇ ).
  • NMOS transistor Q10 generally receives the input voltage VIN through capacitor C6 (which is also biased by bias voltage VBIAS3 through resistor R6).
  • This transistor Q10 generally has a transconductance of K* gm3 and, in combination with transistor Q8 (which is generally biased by bias voltage VBIAS4) and current source 208 (which generates a current of K*I0), generates an amplified signal (which is generally These amplified signals can then be provided to AC-coupling capacitors C7 and C8.
  • switches SI and S2 can be actuated to vary the impedance of the impedance networks.
  • resistor R8 and R10 have resistances of K*RL
  • resistors R7 and R9 typically have resistances of (K-1)RL/K.
  • the total resistance (or impedance for the circuit shown) for each impedance network is RL.
  • the differential amplifier 214 is used to perform noise reduction using the total impedance of the impedance network, whereas in normal operation (when switches SI and S2 are open), a resistance of K*RL is used.
  • FIG. 3 illustrates another example blixer 200-2.
  • the impedance networks of blixer 200-1 have been replaced by resistors Rl 1 and R12 (which generally have a resistance of RL) and a dummy path 216-1 has been included.
  • the dummy path 216-1 generally comprises a mixer 220-1 (which is typically a passive mixer having transistors that are about the same size or aspect ratio (channel width to channel length) as the transistors used for mixers 210 and 220), differential amplifier 218, and resistors R13 and R14 (which each typically have a resistance of RL).
  • mixer 220-1 mixes an amplified output signal from capacitor C7 with a mixing signal LOF2 having a duty cycle that is a fraction or multiple (i.e., K-2 times) the local oscillator duty cycle.
  • This dummy path 216-1 generally "siphons" the extra signal current from the main path. Additionally, the dummy path 216-1 can be used for RF filtering by appropriately sizing the filter around amplifier 218.
  • blixer 200-3 generally uses a dummy path
  • mixer 220-2 uses mixing signal LOFl, but the transistors used within mixer 220-2 are K-l times the size of the transistors used for mixers 210 and 212.
  • This arrangement for blixer 200-3 generally provides substantially similar functionality to the arrangement for blixer 200-2 but may provide an advantageous layout.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
PCT/US2012/042975 2011-06-16 2012-06-18 Current mode blixer with noise cancellation Ceased WO2012174544A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280040113.3A CN103733513B (zh) 2011-06-16 2012-06-18 具有噪声消除的电流模式混合拓扑电路
JP2014516080A JP6162109B2 (ja) 2011-06-16 2012-06-18 ノイズキャンセルを備えた電流モードブリクサー

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/161,718 US8515380B2 (en) 2011-06-16 2011-06-16 Current mode blixer with noise cancellation
US13/161,718 2011-06-16

Publications (2)

Publication Number Publication Date
WO2012174544A2 true WO2012174544A2 (en) 2012-12-20
WO2012174544A3 WO2012174544A3 (en) 2013-06-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/042975 Ceased WO2012174544A2 (en) 2011-06-16 2012-06-18 Current mode blixer with noise cancellation

Country Status (4)

Country Link
US (1) US8515380B2 (enExample)
JP (1) JP6162109B2 (enExample)
CN (1) CN103733513B (enExample)
WO (1) WO2012174544A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8750818B2 (en) 2012-04-13 2014-06-10 Mediatek Inc. Signal processing circuit with circuit induced noise cancellation
US9413300B2 (en) * 2014-08-05 2016-08-09 Texas Instruments Incorporated Front-end matching amplifier
ES2937816T3 (es) * 2017-03-27 2023-03-31 Waveguide Corp Interfaces de sensores
GB2560983B (en) * 2017-03-31 2019-08-07 Canon Kk Detector for detecting a wide band signal

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242963B1 (en) 1999-09-09 2001-06-05 Atheros Communications, Inc. Differential mixer with improved linearity
US20030098744A1 (en) * 2001-11-29 2003-05-29 Seiichi Banba Variable gain differential amplifier and multiplication circuit
US6889037B2 (en) * 2002-08-20 2005-05-03 Broadcom Corporation Reducing active mixer flicker noise
US7299025B1 (en) * 2003-06-09 2007-11-20 National Semiconductor Corporation Harmonic rejection gated-switching mixer
KR100696957B1 (ko) * 2005-03-31 2007-03-20 주식회사 하이닉스반도체 클럭 듀티 조정 회로, 이를 이용한 지연 고정 루프 회로 및그 방법
JP4444174B2 (ja) 2005-06-30 2010-03-31 株式会社東芝 周波数変換器及び無線機
WO2008001256A2 (en) * 2006-06-27 2008-01-03 Nxp B.V. Mixer circuit and method to operate this mixer circuit
US7769361B2 (en) * 2006-07-19 2010-08-03 Qualcomm Incorporated Systems, methods, and apparatus for frequency conversion
JP2008236135A (ja) * 2007-03-19 2008-10-02 Toshiba Corp 周波数コンバータ
US7865164B2 (en) * 2007-09-27 2011-01-04 Qualcomm Incorporated Apparatus and methods for downconverting radio frequency signals
US20090088124A1 (en) * 2007-09-27 2009-04-02 Nanoamp Solutions, Inc. (Cayman) Radio Frequency Receiver Architecture
US7899426B2 (en) * 2007-10-30 2011-03-01 Qualcomm Incorporated Degenerated passive mixer in saw-less receiver
US20090197552A1 (en) * 2008-01-07 2009-08-06 Peter Kurahashi Bandwidth tunable mixer-filter using lo duty-cycle control
US7982527B2 (en) * 2009-01-05 2011-07-19 Bitwave Semiconductor, Inc. Reconfigurable mixer with gain control
US7902923B2 (en) 2009-03-19 2011-03-08 Qualcomm, Incorporated Common-gate common-source amplifier

Also Published As

Publication number Publication date
WO2012174544A3 (en) 2013-06-13
JP2014519795A (ja) 2014-08-14
CN103733513B (zh) 2016-03-30
JP6162109B2 (ja) 2017-07-12
US8515380B2 (en) 2013-08-20
US20120322400A1 (en) 2012-12-20
CN103733513A (zh) 2014-04-16

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