WO2012173325A1 - Adhesive film for a semiconductor package - Google Patents

Adhesive film for a semiconductor package Download PDF

Info

Publication number
WO2012173325A1
WO2012173325A1 PCT/KR2012/001359 KR2012001359W WO2012173325A1 WO 2012173325 A1 WO2012173325 A1 WO 2012173325A1 KR 2012001359 W KR2012001359 W KR 2012001359W WO 2012173325 A1 WO2012173325 A1 WO 2012173325A1
Authority
WO
WIPO (PCT)
Prior art keywords
adhesive film
adhesive layer
weight
parts
semiconductor package
Prior art date
Application number
PCT/KR2012/001359
Other languages
French (fr)
Korean (ko)
Inventor
김광무
권정민
박덕하
이경환
하주희
이동열
박인배
이종훈
Original Assignee
주식회사 이녹스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 이녹스 filed Critical 주식회사 이녹스
Publication of WO2012173325A1 publication Critical patent/WO2012173325A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83885—Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin

Definitions

  • the present invention relates to an adhesive film for a semiconductor package, and more particularly, comprising an adhesive layer, a pressure-sensitive adhesive layer, and a substrate layer of a specific composition, so that chips after completion of dicing in a semiconductor package manufacturing process are die-bonded by a circuit board or a lower part.
  • the pattern on the lower chip relates to an adhesive film for a semiconductor package that can be damaged by macroparticles or to prevent chip cracks.
  • a liquid adhesive is injected and applied to a die fixing pad, a semiconductor chip is mounted thereon, and then a liquid adhesive layer is applied for a predetermined time.
  • the multi-step process method of performing a wire bonding or a molding process has been employ
  • An object of the present invention is to remove the inorganic particles contained in the die-bonding adhesive film for the improvement of package assembly processability, such as surface adhesion and cutting properties and to improve heat resistance and hygroscopic resistance to solve the problems of the prior art, and instead By applying a phenolic resin having a high softening point and excellent heat resistance, the present invention provides a reliable adhesive film for semiconductor packages having excellent heat resistance, hygroscopicity and downflow crack resistance.
  • Adhesive film for semiconductor package for achieving the above object includes a base layer, an adhesive layer and an adhesive layer, the adhesive layer is a) a thermoplastic resin; b) It is a composition containing the thermosetting resin containing the epoxy resin whose softening point is 30-100 degreeC, and the hardening
  • the curing agent may be represented by the following formula (1) as a phenol resin.
  • each R 1 may be the same or different and represents a hydrogen atom, a straight or molecular chain alkyl group having 1 to 10 carbon atoms, a cyclic alkyl group, a hydroxyl group or an aryl group, and R 2 represents a phenol, cresol or aminotriazine and n is It represents the integer of 1-3.
  • the hydroxyl group equivalent of the phenol resin may be 100 ⁇ 300g / eq.
  • the curing agent may be included 5 to 20 parts by weight relative to 100 parts by weight of the total adhesive layer composition.
  • thermoplastic resin may include at least one member selected from the group consisting of an acrylic acid copolymer, a polyester resin, a polyimide resin, a polyester imide, a polyetherimide, a phenoxy, butadiene acrylonitrile copolymer rubber. .
  • the acrylic acid copolymer may include at least one functional group selected from the group consisting of a hydroxyl group, a carboxyl group or a glycidyl group.
  • thermoplastic resin may be included 20 to 80 parts by weight relative to the total 100 parts by weight of the adhesive layer composition.
  • the epoxy resin may be included in 10 to 60 parts by weight relative to 100 parts by weight of the entire adhesive layer composition.
  • the adhesive layer composition may further include a curing accelerator.
  • the curing accelerator may be included 0.1 to 10 parts by weight based on 100 parts by weight of the thermosetting resin.
  • the pressure-sensitive adhesive layer may include 50 to 80 parts by weight of an acrylic copolymer, 10 to 30 parts by weight of a photocurable oligomer, and 1 to 5 parts by weight of a thermosetting agent relative to 100 parts by weight of the entire pressure-sensitive adhesive layer composition.
  • the base layer may include at least one selected from polyethylene, polypropylene, polyethylene terephthalate, polyurethane, ethylene-propylene copolymer, ethylene-ethyl acrylate copolymer, and ethylene-methyl acrylate copolymer.
  • the inorganic layer is not included in the adhesive layer, there is an effect of improving the reliability in the packaging process by preventing chip damage or chip cracks that may occur due to aggregation of the inorganic particles.
  • FIG. 1 is a cross-sectional view of an adhesive film for a semiconductor package of the present invention.
  • the adhesive film for a semiconductor package of the present invention includes a base layer 1, an adhesive layer 2, and an adhesive layer 3, which will be described in detail for each layer.
  • the adhesive layer of the adhesive film of the present invention is a) thermoplastic resin; b) It consists of a composition containing the epoxy resin whose softening point is 30-100 degreeC, and the thermosetting resin containing the hardening
  • thermoplastic resin imparts mutual bonding force so that each adhesive component can be filmed in a mixed state before curing and has a resistance to stress generated from the inside as it is uniformly dispersed in the adhesive layer after curing. It has the effect of improving brittleness.
  • the epoxy resin component has a sharp decrease in viscosity with heating prior to curing, thereby improving wafer adhesion and die-bonding adhesion. After curing, the epoxy resin component improves heat resistance and moisture resistance as it has a bonding structure of a network structure. Each one has an effect.
  • thermoplastic resin is not particularly limited, but acrylic acid copolymers, polyester resins, polyimide resins, polyester imides, polyether imides, phenoxy, butadiene acrylonitrile copolymer rubber, and the like may be used.
  • Acrylic acid copolymers, polyester resins, polyimide resins, and the like can be used in terms of dispersibility and solubility in organic solvents.
  • the resins may be used alone or in combination of two or more thereof, and preferably, two or more thereof may be mixed to provide effects such as heat resistance, moisture resistance, adhesion, and glass transition temperature control of the adhesive film. .
  • the thermoplastic resin is preferably included 20 to 80 parts by weight based on 100 parts by weight of the entire adhesive layer composition. If the amount is less than 20 parts by weight, a problem occurs in the pickup due to the occurrence of burrs of the adhesive layer during dicing. If the content is more than 80 parts by weight, the melt viscosity of the resin is increased to fill a rough surface such as a PCB substrate. As a result, a problem arises in that wafer adhesion characteristics are degraded. This is due to the fact that the thermoplastic resin component has a much larger molecular weight distribution than the thermosetting resin. In order to optimally control the adhesive flow, proper control of the thermoplastic resin is required.
  • the acrylic acid copolymer in the resin composition of the die bonding adhesive layer includes a copolymer including at least one of acrylic acid, acrylic acid ester, methacrylic acid ester, and acrylonitrile as a monomer component, and particularly, to improve heat resistance after curing of the adhesive. More preferably, a structure including at least one functional group consisting of a hydroxyl group, a carboxyl group, or a glycidyl group in the side chain to enable curing reaction with the thermosetting resin is more preferable.
  • the functional group addition-type acrylic monomer may be a copolymer including a hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, glycidyl methacrylate having a glycidyl ether group, etc., wherein, the adhesive
  • the number average molecular weight of the acrylic acid copolymer may be 10,000 to 1,000,000, more preferably 50,000 to 500,000 to improve the film properties and heat resistance of the composition.
  • the polyester resin in the resin composition of the adhesive layer for die bonding is prepared by esterification from a divalent or higher carbonyl acid and a divalent or higher glycol component, and is not particularly limited as long as it has good compatibility with an epoxy resin.
  • terephthalic acid isophthalic acid, orthophthalic acid, 1,5-naphthalic acid, 2,6-naphthalic acid, 4,4'-diphenyldicarboxylic acid, Aromatic dibasic acids such as 2,2'-diphenyldicarboxylic acid and 4,4'-diphenyletherdicarboxylic acid, adipic acid, azeline acid, sebacic acid, 1,4-cyclohexanedicarboxylic acid, 1,3 Aliphatic or alicyclic dibasic acids such as cyclohexanedicarboxylic acid, 1,2-cyclohexanedicarboxylic acid, 4-methyl-1,2-cyclohexanedicarboxylic acid, dimer acid, and the like.
  • the glycol component in the polyester resin composition is ethylene glycol, propylene glycol, 1,3-propanediol, 2-methyl-1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1 , 4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 3-methyl-1,5-pentanediol, neopentylglycol, diethylene glycol, dipropylene glycol, 2,2,4-trimethyl- 1,3-pentanediol, cyclodimethol, neopentylhydroxy pivalinic acid ester, ethylene oxide adducts and propylene oxide adducts of bisphenol A, ethylene oxide adducts and propylene oxide adducts of hydrogenated bisphenol A, 1,9- Nonanediol, 2-methyloctanedio
  • a functional group addition type component may be added to the side chain for the purpose of adding a functional group so as to enable crosslinking reaction with the epoxy resin to improve heat resistance.
  • side-chain functional carbonyl acid components include benzophenone tetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, ethylene glycol bishydrohydrotrimellitate, glycerol trisian hydrotrimellitate, and the like.
  • the appropriate number average molecular weight of the polyester resin may be used from 5,000 to 200,000 in terms of adhesive properties and heat resistance of the adhesive layer for die bonding, and more preferably from 10,000 to 100,000.
  • the polyimide resin is not limited to the form having an imide bond in the side chain or cast iron chain, but the number average molecular weight is within 5,000 to 500,000, preferably 10,000 to 50,000.
  • the polyimide resin has a thermoplastic polyimide resin having no reactive functional group and a functional group capable of reacting with the thermosetting resin by heating, such as a carboxyl group or a hardoxy group, on the side chain, and generally has an aromatic diamine and an aromatic tetracarb.
  • An oligomer-like polyimide resin can be obtained by synthesizing a polyamic acid precursor from a mixture with a main acid dianhydride and dehydrating it by heating it again.
  • polymerization of the said thermoplastic polyimide resin is 3,3 ', 4,4'- biphenyl tetracarboxylic dianhydride, 3,3', 4,4'- benzophenone tetracarboxylic dianhydride.
  • 4,4'-oxydiphthalic acid dianhydride ethylene glycol bistrimellitic dianhydride, 4,4'-bisphenol A dianhydride, pyromellitic anhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride , 1,4,5,7-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,2- (ethylene) bis (trimelitate dianhydride), 1,3 -(Trimethylene) bis (trimeric tate anhydride) and the like, and the above substances may be used alone or in combination of two or more thereof.
  • Aliphatic or aromatic diamines reacting with the acid dianhydride include methylenediamine, ethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, heptamethylene didiamine, octamethylenediamine, 2,4-diaminotoluene, m- Xylenediamine, p-xylenediamine, m-phenylenediamine, p-phenylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 1,4-diaminocyclohexane, piperazine , 4,6-dimethyl-m-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylethane, 4, 4'-diaminodiphenylmethane, 3,
  • diamino polysiloxane can be used as one of the diamine components of the said polyimide resin.
  • the diaminopolysiloxanes include 1,3-bis (3-aminopropyl) tetramethylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydimethylsiloxane, 1,3-bis (4-aminophenyl) tetramethylsiloxane, ⁇ , ⁇ -bis (4-aminophenyl) polydimethylsiloxane, 1,3-bis (3-aminophenyl) tetramethylsiloxane, ⁇ , ⁇ -bis (3-aminophenyl) polydimethyl siloxane, 1,3-bis (3-aminopropyl) tetraphenylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydiphenylsiloxane, and the like, which may be used alone or in combination of two or more thereof.
  • the diamino polysiloxane is preferably used within 5 to
  • the adhesive layer composition for die bonding of the present invention includes a thermosetting resin, which is not cured by ultraviolet irradiation, but has a three-dimensional network structure and heat-resisting property to adhere to the adherend with heat.
  • a thermosetting resin which is not cured by ultraviolet irradiation, but has a three-dimensional network structure and heat-resisting property to adhere to the adherend with heat.
  • an epoxy resin, an unsaturated polyester resin, a thermosetting acrylic resin, a phenol resin, a diaryl phthalate resin, a polyurethane resin, etc. may be included, and these thermosetting resins may be used alone or in combination of two or more thereof.
  • the adhesive layer composition for die bonding has a low melt viscosity before curing and is easy to be applied to an attaching process, and after curing, the adhesive layer composition may exhibit opposite characteristics indicating high heat resistance. It is preferable to use.
  • epoxy resin various conventionally known epoxy resins can be used, but usually, those having a molecular weight of about 300 to 5000 can be used, and more preferably, a solid epoxy resin of 500 to 2000 or less can be used.
  • the appropriate softening point of the solid epoxy resin may be 30 to 100 ° C, preferably 40 to 70 ° C.
  • the softening point is 30 °C or less, the adhesive force on the surface of the adhesive layer is increased at room temperature, chip picking properties after dicing is reduced, and when the softening point is 100 °C or more, it is difficult to obtain sufficient resin fluidity at 150 °C chip attach process temperature, chip stacking Since the effect of filling the PCB substrate at the bottom or the pattern at the top of the chip is reduced, adhesion problems may occur.
  • the epoxy resin may be bisphenol A type, bisphenol F type, bisphenol S type, undoped bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, florene type, Bifunctional or polyfunctional epoxy resins such as phenol novolak type, cresol novolak type, trishydroxyphenylmethane type and tetraphenylmethane type can be used, and more preferably hardenability, adhesiveness and heat resistance, moisture resistance, etc.
  • Bisphenol A type, cresol novolak type, phenol novolak type epoxy resins which are relatively excellent in physical properties and the above materials can be used in combination of two or more kinds.
  • the phenol resin represented by following General formula (1) is included.
  • each R 1 may be the same or different and represents a hydrogen atom, a straight or molecular chain alkyl group having 1 to 10 carbon atoms, a cyclic alkyl group, a hydroxyl group or an aryl group, and R 2 represents a phenol, cresol or aminotriazine and n is 1 To an integer of 3).
  • Preferred examples of the phenol resin represented by the formula (1) include phenol novolak resins, cresol novolak resins, aminotriazine novolak resins, and softening points of which are 120 ° C or higher.
  • the average hydroxyl group equivalent of the phenol resin is 100 to 300 g / eq. If it is less than 100 g / eq, the hygroscopicity increases due to the hydroxyl group (OH), so that the storage stability is feared. If it exceeds 300 g / eq, the glass transition temperature is lowered after curing. There is a fear that the reliability is lowered.
  • the content of the phenol resin is preferably included in the range of 5 to 20 parts by weight based on 100 parts by weight of the total composition.
  • the amount of the curing agent is less than 5 parts by weight, the curing effect of the curable resin is insufficient, resulting in a decrease in heat resistance.
  • the amount of the curing agent is mixed in an amount exceeding 20 parts by weight, the reactivity with the resin is increased. The problem is that the characteristics are greatly reduced.
  • a curing accelerator may be used in the die-bonding adhesive layer composition, and various curing accelerators known in the art may be used, in particular, such as amine, imidazole, phosphorus, boron, and phosphorus-boron.
  • a curing accelerator can be used.
  • the optimum blending amount of the curing accelerator is preferably from 0.01 to 10 parts by weight, more preferably from 0.5 to 5 parts by weight with respect to 100 parts by weight of the thermosetting resin, and may be used alone or in combination of two or more. .
  • the adhesive layer exhibits a constant adhesive force before ultraviolet curing and at the same time serves as a support for imparting ductility and strength as an adhesive film.
  • the adhesive layer has a high molecular weight acrylic copolymer or a rubber component and a radiation-curable functional group such as a carbon-carbon double bond, a photocurable oligomer component, a thermosetting agent, and a polymer having a role of reducing adhesiveness due to ultraviolet irradiation It may be composed of a cross-linking agent component and a photoinitiator component to increase the cohesion between the adhesive components as the primary thermal curing of the copolymerization component.
  • acrylic acid alkyl ester copolymers having 1 to 18 carbon atoms that can be obtained from (meth) acrylic acid ester monomers and (meth) acrylic acid derivatives may be used, preferably acrylic acid.
  • Methyl, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate and the like can be used.
  • the pressure-sensitive adhesive layer for UV-curable wafer dicing formed of the high molecular weight acrylic copolymer may include a monomer component having a reactor capable of causing a crosslinking reaction with the alkyl ester for the purpose of modifying the cohesive force and heat resistance of the pressure-sensitive adhesive film.
  • the monomer component includes carboxyl group-containing monomers such as carboxyl ethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid and fumaric acid, and acid anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (4 Hydroxyl group-containing monomers such as hydroxy methyl cyclohexyl) methyl (meth) acrylate, and acrylamide, acrylonitrile, etc.
  • carboxyl group-containing monomers such as carboxyl ethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid and fumaric acid, and acid
  • reactor-containing monomer components may be one or two or more Can be used interchangeably.
  • hydroxyl group-containing monomers such as hydroxyethyl acrylate can be introduced in that adhesion and adhesion with the adherend are easy to control.
  • the above-mentioned high molecular weight acrylic copolymer may have a molecular weight of 30,000 to 500,000 or less, and more preferably 50,000 to 200,000, in order to improve the initial adhesion of the adhesive film and the cohesion between the adhesive components.
  • the molecular weight is less than the above range, the cohesive force of the pressure-sensitive adhesive film is reduced, resulting in the phenomenon that the pressure-sensitive adhesive component is transferred to a relative substrate after UV curing, and when the molecular weight exceeds the above range, the compatibility with other pressure-sensitive adhesive components is poor and uniform. Not only the adhesive property can be realized but also a phase separation phenomenon occurs during UV curing, which may cause a problem of inhibiting the original property of chip pick-up ease.
  • the adhesive force of the adhesive film may not be sufficient. If the amount is more than 80 parts by weight, the adhesive force may be too high even after UV curing, and the smooth photopolymerization between the photosensitive oligomers may be inhibited, thereby preventing smooth chip pickup. Problems may arise.
  • the ultraviolet-curable wafer dicing adhesive layer is essential to the photocurable oligomer having at least one polymerizable carbon-carbon double bond in the main chain or side chain in the molecule in order to advance the photocuring reaction by ultraviolet rays together with the acrylic copolymer component.
  • the photocurable oligomer urethane oligomer, urethane (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythrate Lititol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanedioldi (meth) acrylate oligomer and the like;
  • the photocurable oligomer may be used alone or in combination of two or more in order to increase the effect in terms of adhesion characteristics.
  • the optimum amount of the photocurable oligomer is preferably 10 to 30 parts by weight based on 100 parts by weight of the adhesive layer composition.
  • the adhesive film of the present invention has a multi-layered structure, in order to more effectively lower the interfacial adhesive force after irradiation with the die bonding adhesive layer and ultraviolet irradiation, which are in close contact with the adhesive layer for ultraviolet curing wafer dicing, the silicone acrylate oligomer is used in combination. It is desirable to.
  • the amount of acrylate incorporated is preferably not more than 20% of the amount of photocurable oligomer used.
  • the UV curable wafer dicing adhesive layer may adjust the initial adhesive strength and cohesion by increasing the number average molecular weight by appropriately mixing the internal curing agent in the acrylic pressure-sensitive adhesive component before ultraviolet irradiation, the internal curing agent is an epoxy-based curing agent, phosphate that can be thermally cured
  • the internal curing agent is an epoxy-based curing agent, phosphate that can be thermally cured
  • An isocyanate-based curing agent or an isocyanate-based curing agent can be added and used, and more preferably, an isocyanate-based curing agent which can easily control the curing reaction temperature, speed, and adhesive force can be used.
  • the isocyanate hardener in the internal curing agent is an aromatic polyisocyanate compound, an alicyclic polyisocyanate compound, an aliphatic polyisocyanate compound and a trimer of polyhydric isocyanate compounds thereof, and terminal isocyanate urethane prepolymers obtained by reacting these polyisocyanate compounds with a polyol compound. It may include.
  • the organic polyhydric isocyanate compound is preferably added in an amount of 0.1 to 10 parts by weight, in particular 1 to 5 parts by weight, based on 100 parts by weight of the pressure-sensitive adhesive layer composition. It is also possible to add an antistatic agent in that it has an effect of preventing chip crack by suppressing static electricity generated.
  • a photopolymerization initiator having a function of decomposing and generating free radicals that may cause an addition reaction between carbon-carbon double bond groups contained in the photocurable oligomer in accordance with ultraviolet irradiation is mixed in the pressure-sensitive adhesive to provide efficient photocuring even at a low ultraviolet irradiation amount. Can cause.
  • photoinitiators any one can be used as long as it is activated by irradiating light of a wavelength of 250 to 800 nm, and may be used alone or in combination of two or more thereof.
  • Such photopolymerization initiators include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl, benzoin dimethyl ketal, 2 , 4-diethyl thioxanthone, hydroxy cyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl and ⁇ -chloroanthraquinone It is preferable to include within 0.5 to 5 parts by weight of the pressure-sensitive adhesive composition. If it is out of the above content range may lower the photo-initiation efficiency or problems in storage of the adhesive.
  • an ultraviolet permeable base material can be used.
  • the UV-transmitting substrate is polyethylene, polypropylene, polyethylene terephthalate, polyurethane, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, ethylene vinyl acetate , Polystyrene, polycarbonate, and those laminated or crosslinked with two or more of these components may be used.
  • the UV-transmissive substrate may impart heat shrinkability by a uniaxial or biaxial stretching treatment, and the heat shrinkability is the adhesion between the adhesive layer on the substrate and the adhesive layer for die bonding as the substrate layer is heat shrinked after dicing.
  • An additional effect of reducing the area can be obtained to facilitate chip pick-up.
  • the surface of the substrate layer may be subjected to physical or chemical treatment such as corona treatment, plasma treatment, chromic acid treatment, etc. in order to improve adhesion with the adhesive layer formed on the substrate layer.
  • physical or chemical treatment such as corona treatment, plasma treatment, chromic acid treatment, etc.
  • the thickness of the base layer is not particularly limited, it is preferably 20 to 200 ⁇ m, and more preferably 50 to 150 ⁇ m in terms of expandability for smoothly picking up the diced chips in the semiconductor manufacturing process.
  • a suitable product is selected from among UV-curable dicing film products generally used for dicing process in a conventional semiconductor package manufacturing process, or used for adhesion.
  • the layer can also be prepared and used directly.
  • a stirrer and reflux condenser were installed in a 1 L glass reactor capable of maintaining a temperature at 80 ° C. using cooling water, and polymerized using a device capable of detecting a temperature change according to reaction time with a thermometer.
  • 48.17 g of butyl acrylate to be polymerized with ethyl acetate, 10.01 g of ethyl acrylate, and 3.26 g of 2-hydroxyethyl methacrylate were placed in a polymerization reactor, and charged with nitrogen to remove gas while stirring for 30 minutes.
  • (A2) 3.8 g of urethane acrylate (Sartomer, CN-940) was used as 35 g of an acrylic adhesive solution prepared in (A1) as a curing agent and 0.8 g of coronate-L (Nippon Polyuretan Co.) as a curing agent and a photocurable oligomer.
  • a dicing adhesive film was obtained under the same conditions except that 0.6 g (Sartomer, CN-9800) and 0.2 g of Igacure 184 (Ciba Specialty Co.) were mixed with a photoinitiator.
  • a UV curable dicing adhesive film (UV curable adhesive film manufactured by Nippon Electric Chemical Co., Ltd., product name: UHP-110M3) was used as a property comparison with the pressure-sensitive adhesive polymer.
  • an adhesive layer composition for die bonding comprising a mixture of thermoplastic resins such as acrylic resins, polyester resins, polyimide resins, epoxy resins, phenol resins, and curing accelerators in the ratios shown in the table.
  • the mixed solvent was dried and removed in a hot air dryer at 140 ° C. for 5 minutes to obtain a B-stage die-bonding adhesive film having a thickness of 20 ⁇ m. there was.
  • Epoxy Resin 1 Bisphenol A Epoxy
  • Epoxy Resin 2 Cresol Novolac Epoxy
  • Epoxy Resin 3 Cresol Novolac Epoxy
  • Epoxy Resin 4 Bisphenol A Epoxy
  • Curing agent 1 phenol novolak resin
  • Curing agent 2 aminotriazine novolak resin
  • Curing agent 3 Bisphenol A novolac resin
  • Curing agent 4 Phenolic novolac resin
  • Curing agent 5 Cresol novolac resin
  • Plastic Resin 1 Acrylic Copolymer
  • Plastic Resin 2 Polyimide Resin
  • Curing accelerator imidazole compound (sichokuizable, curazole 2PH)
  • the adhesive force with the wafer was measured by measuring the strength (the tensile speed of the adhesive film 300 mm / min).
  • roll lamination is carried out at a temperature of 120 ° C. so that the die bonding adhesive layer faces the back surface of the silicon wafer having a thickness of 800 ⁇ m so as not to be damaged under high load.
  • the mirror surfaces of the Oz copper foil were faced to each other and subjected to roll lamination under conditions of 100 ° C.
  • the adhesive strength was measured by peeling the adhesive strength between the chip and the copper foil by 180 ° to obtain the adhesive strength before curing, and the specimen was subjected to a high temperature curing process for 175 ° C. ⁇ 2 hr, and then 180 ° peel strength was measured. .
  • the back surface of the 8-inch-diameter silicon wafer was polished to a thickness of 80 ⁇ m, and then a mirror-treated wafer was used. Thereafter, as described in (1), the die bonding adhesive layer is subjected to 60 ° C roll lamination and chipping at the time of dicing while performing full cutting dicing (manufactured by Disco, DFD-651 dicing equipment) in a size of 9 mm ⁇ 12 mm. The phenomenon was observed and classified into the following criteria.
  • Chip fragments are generated at the size of 30 ⁇ m or less at the chip edge
  • Chip fragments occur within 30 ⁇ 60 ⁇ m at chip edge
  • the back surface of the 8-inch diameter silicon wafer was polished to a thickness of 100 ⁇ m, and then a mirror-treated wafer was used. Thereafter, as described in (1), the die bonding adhesive layer was subjected to lamination at 60 ° C., and full-cut dicing (Disco Co., Ltd., DFD-651 dicing equipment) was performed at a size of 9 mm ⁇ 12 mm.
  • the sample prepared as above is picked up using a die-bonding machine and classified based on the following criteria.
  • ⁇ : 90-100% can be picked up and 20% or more retries
  • the amount of flow between the PCB circuit patterns is calculated using a microscope to check the filling property and to classify it based on the following criteria.
  • the heat resistance evaluation criteria are as follows.
  • Bubble generation or interfacial peeling area is 5% or less of chip area
  • Bubble generation or interface peeling area is 30% or more of the chip area
  • the chipping phenomenon occurs when dicing due to the missing inorganic particles in the adhesive layer for die bonding, and also shows a problem in terms of heat resistance after moisture absorption.
  • the adhesive films of Examples 1 to 5 prepared using a phenol resin having a softening point of 120 ° C. or higher included in the present invention may have adhesive strength, chipping resistance, substrate filling, and moisture absorption before and after. It was confirmed that excellent results in the heat resistance of the.
  • Comparative Examples 6 to 8 using other types of phenol resins or softening points of 120 ° C. or less had slight differences depending on the type, but had problems in chipping resistance, pick-up properties, and substrate filling properties. It was confirmed that there is a problem in reliability due to low heat resistance.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

The present invention relates to an adhesive film for a semiconductor package. In the adhesive film, an adhesive layer (2) for dicing a wafer and an adhesive layer (3) for die bonding are successively stacked on a base film (1). The adhesive layer for dicing consists of an ultraviolet curing-type resin composition. The adhesive layer for die bonding consists of a mixture of a thermosetting resin and a thermoplastic resin, each of which does not contain inorganic particles. When a plurality of semiconductor chips are vertically mounted on a circuit board using the adhesive film which does not contain inorganic particles, pattern damage and chip cracking caused by large-scale particles between the vertical semiconductor chips may be prevented from occurring.

Description

반도체 패키지용 접착필름Adhesive film for semiconductor package
본 발명은 반도체 패키지용 접착필름에 관한 것으로, 보다 상세하게는 특정 조성의 접착층, 점착층 및 기재층으로 구성됨으로써, 반도체 패키지 제조공정에서 다이싱 완료 후의 칩들을 다이 본딩 방식에 의하여 회로 기판 또는 하부 칩 상에 부착할 때, 하부 칩 상의 패턴이 거대입자에 의해 손상되거나 칩 크랙을 방지할 수 있는 반도체 패키지용 접착필름에 관한 것이다.The present invention relates to an adhesive film for a semiconductor package, and more particularly, comprising an adhesive layer, a pressure-sensitive adhesive layer, and a substrate layer of a specific composition, so that chips after completion of dicing in a semiconductor package manufacturing process are die-bonded by a circuit board or a lower part. When attached to a chip, the pattern on the lower chip relates to an adhesive film for a semiconductor package that can be damaged by macroparticles or to prevent chip cracks.
종래의 반도체 패키지 제조과정에서는 리드 프레임이나 회로기판 부재에 반도체 칩을 부착함에 있어서 우선 다이 고정용 패드 부위에 액상 접착제를 주입, 도포하고 여기에 반도체 칩을 탑재한 후, 액상의 접착제 층을 일정시간 고온 경화시킨 후, 와이어 본딩이나 몰딩 공정을 행하는 다단계 과정의 공정법이 채택되어 왔다. In a conventional semiconductor package manufacturing process, in attaching a semiconductor chip to a lead frame or a circuit board member, first, a liquid adhesive is injected and applied to a die fixing pad, a semiconductor chip is mounted thereon, and then a liquid adhesive layer is applied for a predetermined time. After high temperature hardening, the multi-step process method of performing a wire bonding or a molding process has been employ | adopted.
하지만 최근 전자기기의 소형화, 고기능화, 대용량화 추세가 확대되고 이에 따른 반도체 패키지의 고밀도화, 고집적화에 대한 필요성이 급격히 커짐에 따라 반도체 칩 크기가 점점 커지고 있으며 집적도 측면에서도 개선하기 위하여 칩을 다단으로 적층하는 스택패키지 방법이 점차로 증가하고 있다.However, with the recent trend of miniaturization, high functionality, and large capacity of electronic devices, and the necessity for higher density and higher integration of semiconductor packages, the size of semiconductor chips is increasing, and stacks of chips stacked in multiple layers to improve the degree of integration are also required. Package methods are increasing.
최근의 반도체 패키지 개발동향에 있어서는 상술한 반도체 칩들의 소형 박형화ㆍ고성능화가 급격히 진행되고 또한 다기능화가 진행됨에 따라 2개 이상의 반도체 칩을 적층한 3D 패키지가 급증하고 있으며 더불어 패키지 대용량화를 목적으로 동일한 패키지 내에 더 많은 칩을 적층할 수 있도록 반도체 웨이퍼의 두께가 모두 100㎛ 이하로 더욱 극박화 되고 있다. In recent years, in the development trend of semiconductor packages, as the miniaturization and high performance of the semiconductor chips described above are rapidly progressing and the multifunctionalization is progressing, 3D packages in which two or more semiconductor chips are stacked are rapidly increasing. In order to stack more chips, the thickness of all semiconductor wafers is becoming even thinner than 100 μm.
이렇듯 반도체 칩 및 층간 접착필름의 두께가 100㎛ 이하의 패키지를 제조함에 있어서 종래의 적층방법을 적용할 경우, 웨이퍼 칩 특성상 충격에 매우 취약하기 때문에 다이본딩용 접착필름에 포함되어 있는 무기입자의 뭉침으로 인해 수 ㎛의 거대 입자가 접착필름 내에 포함되어 있을 경우 다이본딩 시 충격에 칩 크랙이 발생되거나 칩 상부의 패턴 손상으로 패키지 조립 이후 전기적 특성에 문제를 일으키게 된다.As described above, when the conventional lamination method is applied in the manufacture of a package having a thickness of 100 μm or less in the thickness of a semiconductor chip and an interlayer adhesive film, agglomeration of the inorganic particles included in the adhesive film for die bonding is very vulnerable to impact due to the characteristics of the wafer chip. Therefore, when the microparticles of several μm are included in the adhesive film, chip cracks may be generated during the impact of die bonding or the pattern may be damaged on the chip to cause electrical characteristics after package assembly.
따라서, 극박 웨이퍼의 다단 적층시 칩 크랙방지 및 패키지 조립 이후 전기적 특성을 향상시킬 수 있는 반도체 패키지용 접착필름이 요구되고 있다.Therefore, there is a need for an adhesive film for a semiconductor package that can improve the electrical properties after chip crack prevention and package assembly during multi-stage stacking of ultrathin wafers.
본 발명의 목적은 상기와 같은 종래기술의 문제를 해결하기 위하여 다이본딩용 접착필름에 표면점착성과 컷팅성 같은 패키지 조립 공정성 향상과 내열성 및 내흡습성 향상을 위해 포함하고 있는 무기입자를 제거하고, 대신에 고연화점, 내열 특성이 우수한 페놀수지를 적용함으로써, 내열성 내흡습성 및 내리플로우 크랙성 등이 우수한 신뢰성 있는 반도체 패키지용 접착필름을 제공함에 있다.An object of the present invention is to remove the inorganic particles contained in the die-bonding adhesive film for the improvement of package assembly processability, such as surface adhesion and cutting properties and to improve heat resistance and hygroscopic resistance to solve the problems of the prior art, and instead By applying a phenolic resin having a high softening point and excellent heat resistance, the present invention provides a reliable adhesive film for semiconductor packages having excellent heat resistance, hygroscopicity and downflow crack resistance.
상기 목적을 달성하기 위한 본 발명의 실시예에 따른 반도체 패키지용 접착필름은 기재층, 점착층 및 접착층을 포함하며, 상기 접착층은 a) 열가소성 수지; b) 연화점이 30~100℃인 에폭시 수지 및 연화점이 120℃이상인 경화제를 포함하는 열경화성 수지를 포함하는 조성물인 것을 특징으로 한다.Adhesive film for semiconductor package according to an embodiment of the present invention for achieving the above object includes a base layer, an adhesive layer and an adhesive layer, the adhesive layer is a) a thermoplastic resin; b) It is a composition containing the thermosetting resin containing the epoxy resin whose softening point is 30-100 degreeC, and the hardening | curing agent whose softening point is 120 degreeC or more.
여기에서, 상기 경화제는 페놀수지로서, 하기 화학식 1로 표시될 수 있다.Here, the curing agent may be represented by the following formula (1) as a phenol resin.
[화학식 1][Formula 1]
Figure PCTKR2012001359-appb-I000001
Figure PCTKR2012001359-appb-I000001
(상기 식에서, R1은 각각 동일하거나 상이할 수 있으며 수소원자, 탄소수 1 내지 10의 직쇄 또는 분자쇄 알킬기, 환상 알킬기, 수산기 또는 아릴기를 나타내고 R2는 페놀, 크레졸 또는 아미노트리아진을 나타내고 n은 1 내지 3의 정수를 나타낸다.)Wherein each R 1 may be the same or different and represents a hydrogen atom, a straight or molecular chain alkyl group having 1 to 10 carbon atoms, a cyclic alkyl group, a hydroxyl group or an aryl group, and R 2 represents a phenol, cresol or aminotriazine and n is It represents the integer of 1-3.)
여기에서, 상기 페놀수지의 수산기 당량은 100~300g/eq일 수 있다.Here, the hydroxyl group equivalent of the phenol resin may be 100 ~ 300g / eq.
여기에서, 상기 경화제는 접착층 조성물 전체 100중량부 대비 5~20중량부 포함될 수 있다.Here, the curing agent may be included 5 to 20 parts by weight relative to 100 parts by weight of the total adhesive layer composition.
여기에서, 상기 열가소성 수지는 아크릴산 공중합체, 폴리에스테르수지, 폴리이미드수지, 폴리에스테르이미드, 폴리에테르이미드, 페녹시, 부타디엔아크릴로 니트릴 공중합 고무로 이루어진 군에서 선택되는 1종 이상을 포함할 수 있다.Here, the thermoplastic resin may include at least one member selected from the group consisting of an acrylic acid copolymer, a polyester resin, a polyimide resin, a polyester imide, a polyetherimide, a phenoxy, butadiene acrylonitrile copolymer rubber. .
여기에서, 상기 아크릴산 공중합체는 히드록시기, 카르복실기 또는 글리시딜기로 이루어진 군으로부터 선택된 1종 이상의 관능기를 포함할 수 있다.Here, the acrylic acid copolymer may include at least one functional group selected from the group consisting of a hydroxyl group, a carboxyl group or a glycidyl group.
여기에서, 상기 열가소성 수지는 접착층 조성물 전체 100중량부 대비 20~80중량부 포함될 수 있다.Here, the thermoplastic resin may be included 20 to 80 parts by weight relative to the total 100 parts by weight of the adhesive layer composition.
여기에서, 상기 에폭시 수지는 접착층 조성물 전체 100중량부 대비 10~60중량부 포함될 수 있다.Here, the epoxy resin may be included in 10 to 60 parts by weight relative to 100 parts by weight of the entire adhesive layer composition.
여기에서, 상기 접착층 조성물은 경화촉진제를 더 포함할 수 있다.Here, the adhesive layer composition may further include a curing accelerator.
여기에서, 상기 경화촉진제는 열경화성 수지 100중량부에 대하여 0.1~10중량부 포함될 수 있다.Here, the curing accelerator may be included 0.1 to 10 parts by weight based on 100 parts by weight of the thermosetting resin.
여기에서, 상기 점착층은 점착층 조성물 전체 100중량부 대비 50~80중량부의 아크릴 공중합체, 10~30중량부의 광경화성 올리고머 및 1~5중량부의 열경화제를 포함할 수 있다.Here, the pressure-sensitive adhesive layer may include 50 to 80 parts by weight of an acrylic copolymer, 10 to 30 parts by weight of a photocurable oligomer, and 1 to 5 parts by weight of a thermosetting agent relative to 100 parts by weight of the entire pressure-sensitive adhesive layer composition.
여기에서, 상기 기재층은 폴리에틸렌, 폴리프로필렌, 폴리에틸렌테레프탈레이트, 폴리우레탄, 에틸렌-프로필렌 공중합체, 에틸렌-아크릴산에틸 공중합체, 에틸렌-아크릴산메틸 공중합체 중 선택되는 1종 이상을 포함할 수 있다.Here, the base layer may include at least one selected from polyethylene, polypropylene, polyethylene terephthalate, polyurethane, ethylene-propylene copolymer, ethylene-ethyl acrylate copolymer, and ethylene-methyl acrylate copolymer.
본 발명에 의하면, 접착층에 무기입자가 포함되지 않기 때문에, 무기입자의 뭉침현상에 의하여 발생할 수 있는 칩 상부의 패턴 손상이나 칩 크랙을 방지하여 패키지공정에서 신뢰성을 향상시킨다는 효과가 있다.According to the present invention, since the inorganic layer is not included in the adhesive layer, there is an effect of improving the reliability in the packaging process by preventing chip damage or chip cracks that may occur due to aggregation of the inorganic particles.
도 1은 본 발명의 반도체 패키지용 접착필름의 단면도이다.1 is a cross-sectional view of an adhesive film for a semiconductor package of the present invention.
본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나, 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 것이며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하며, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성요소를 지칭한다.Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, only the present embodiments to make the disclosure of the present invention complete, and common knowledge in the art to which the present invention pertains. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.
도 1에 나타난 바와 같이, 본 발명의 반도체 패키지용 접착필름은 기재층(1), 점착층(2) 및 접착층(3)을 포함하는바, 이하 각 층별로 상세히 설명한다.As shown in FIG. 1, the adhesive film for a semiconductor package of the present invention includes a base layer 1, an adhesive layer 2, and an adhesive layer 3, which will be described in detail for each layer.
접착층Adhesive layer
본 발명의 접착필름의 접착층은 a) 열가소성 수지; b) 연화점이 30~100℃인 에폭시 수지 및 연화점이 120℃이상인 경화제를 포함하는 열경화성 수지를 포함하는 조성물로 이루어진다.The adhesive layer of the adhesive film of the present invention is a) thermoplastic resin; b) It consists of a composition containing the epoxy resin whose softening point is 30-100 degreeC, and the thermosetting resin containing the hardening | curing agent whose softening point is 120 degreeC or more.
상기 열가소성 수지는 경화 전 상태에서는 각각의 접착성분들이 혼합된 상태에서 필름화 될 수 있도록 상호 결합력을 부여하며 경화 후에는 접착층 내에 균일하게 분산됨에 따라 내부로부터 발생하는 응력에 대해 저항성을 가지게 함으로써 접착층의 취성을 향상시키는 효과가 있다. The thermoplastic resin imparts mutual bonding force so that each adhesive component can be filmed in a mixed state before curing and has a resistance to stress generated from the inside as it is uniformly dispersed in the adhesive layer after curing. It has the effect of improving brittleness.
한편, 에폭시 수지 성분은 경화 전에는 가열에 따라 점성이 급격히 저하되어 웨이퍼부착 및 다이본딩 부착력을 향상시킬 수 있으며, 경화 후에는 그물구조의 결합형태를 가짐에 따라 내열성 및 내습성이 향상되어 반도체 신뢰성을 부여한다는 점에서 각각 효과가 있다.On the other hand, the epoxy resin component has a sharp decrease in viscosity with heating prior to curing, thereby improving wafer adhesion and die-bonding adhesion. After curing, the epoxy resin component improves heat resistance and moisture resistance as it has a bonding structure of a network structure. Each one has an effect.
상기 열가소성 수지는 특히 제한되지 않지만, 아크릴산 공중합체, 폴리에스테르수지, 폴리이미드수지, 폴리에스테르 이미드, 폴리에테르 이미드, 페녹시, 부타디엔 아크릴로 니트릴 공중합 고무 등을 사용할 수 있으며, 상기 열경화성 수지와의 분산성, 유기용매 가용성 면에서 아크릴산 공중합체나 폴리에스테르 수지 및 폴리이미드 수지 등을 사용할 수 있다. 상기 수지들은 단독 또는 2종 이상을 혼용해서 사용할 수 있으며, 바람직하게는 2개 이상을 혼합하여 사용하여 접착필름의 내열성, 내습성, 접착성 및 유리전이온도 조절 용이성 등의 효과를 가져 올 수 있다.The thermoplastic resin is not particularly limited, but acrylic acid copolymers, polyester resins, polyimide resins, polyester imides, polyether imides, phenoxy, butadiene acrylonitrile copolymer rubber, and the like may be used. Acrylic acid copolymers, polyester resins, polyimide resins, and the like can be used in terms of dispersibility and solubility in organic solvents. The resins may be used alone or in combination of two or more thereof, and preferably, two or more thereof may be mixed to provide effects such as heat resistance, moisture resistance, adhesion, and glass transition temperature control of the adhesive film. .
여기에서 상기 열가소성 수지는 접착층 조성물 전체 100 중량부 대비 20~80중량부 포함되는 것이 바람직하다. 20중량부 미만을 혼입할 경우 다이싱 시 접착층의 버(Burr) 발생으로 픽업에서 문제가 발생하며, 80 중량부를 초과하여 혼입하게 되면 수지 용윰점도가 커져 PCB기판과 같은 거친 표면을 메우는 효과가 떨어지므로 웨이퍼 부착 특성이 저하되는 문제가 발생한다. 이는 열가소성 수지 성분의 경우 열경화성 수지와 비교해서 훨씬 큰 분자량분포를 가지는 것에 기인되는 것으로서 접착제 흐름성을 최적으로 제어하기 위해서는 열가소성 수지의 적절한 조절이 요구된다.Here, the thermoplastic resin is preferably included 20 to 80 parts by weight based on 100 parts by weight of the entire adhesive layer composition. If the amount is less than 20 parts by weight, a problem occurs in the pickup due to the occurrence of burrs of the adhesive layer during dicing. If the content is more than 80 parts by weight, the melt viscosity of the resin is increased to fill a rough surface such as a PCB substrate. As a result, a problem arises in that wafer adhesion characteristics are degraded. This is due to the fact that the thermoplastic resin component has a much larger molecular weight distribution than the thermosetting resin. In order to optimally control the adhesive flow, proper control of the thermoplastic resin is required.
상기 다이본딩용 접착층의 수지조성물 중 아크릴산 공중합체로서는 아크릴산, 아크릴산 에스테르, 메타크릴산 에스테르, 아크릴로니트릴 중 적어도 1개 이상을 모노머 성분으로 한 공중합체를 포함하며, 특히 접착제 경화 후 내열성 향상을 목적으로 하여 열경화성 수지와의 경화반응이 가능하도록 측쇄에 하이드록시기, 카르복실기 또는 글리시딜기로 이루어진 하나 이상의 관능기를 포함한 구조가 더욱 바람직하다. The acrylic acid copolymer in the resin composition of the die bonding adhesive layer includes a copolymer including at least one of acrylic acid, acrylic acid ester, methacrylic acid ester, and acrylonitrile as a monomer component, and particularly, to improve heat resistance after curing of the adhesive. More preferably, a structure including at least one functional group consisting of a hydroxyl group, a carboxyl group, or a glycidyl group in the side chain to enable curing reaction with the thermosetting resin is more preferable.
그리고 이러한 관능기 부가형 아크릴모노머는 수산기를 가지는 히드록시 메타아크릴레이트, 카르복실기를 가지는 카르복실메타아크릴레이트, 글리시딜 에테르기를 가지는 글리시딜메타아크릴레이트 등을 포함한 공중합체를 사용할 수 있으며, 이때, 접착제 조성물의 필름성 및 내열성 향상을 위해 상기 아크릴산 공중합체의 수평균 분자량은 10,000~1,000,000, 더욱 바람직하게는 50,000~500,000 이내가 되도록 할 수 있다.And the functional group addition-type acrylic monomer may be a copolymer including a hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, glycidyl methacrylate having a glycidyl ether group, etc., wherein, the adhesive The number average molecular weight of the acrylic acid copolymer may be 10,000 to 1,000,000, more preferably 50,000 to 500,000 to improve the film properties and heat resistance of the composition.
상기 다이본딩용 접착층의 수지조성물 중 폴리에스테르수지는 2가 이상의 카르보닐산과 2가 이상의 글리콜 성분으로부터 에스테르화 반응을 통해서 제조되며 에폭시 수지와의 상용성이 좋은 것이면 특별히 제한되지 않는다. The polyester resin in the resin composition of the adhesive layer for die bonding is prepared by esterification from a divalent or higher carbonyl acid and a divalent or higher glycol component, and is not particularly limited as long as it has good compatibility with an epoxy resin.
상기 폴리에스테르수지의 조성물 중 카르보닐산성분으로 예를 들면 테레프탈 산, 이소프탈산, 오르소프탈산, 1,5-나프탈산, 2,6-나프탈산, 4, 4＇-디페닐디카르본산, 2,2＇-디페닐디카르본산, 4,4'-디페닐에테르디카르본산 등의 방향족 2염기산과 아디핀산, 아제라인산, 세바신산, 1,4-사이클로헥산디카르본산, 1,3-사이클로헥산 디카르본산, 1,2-사이클로헥산디카르본산, 4-메틸-1,2-사이클로헥산디카르본산, 다이머산 등의 지방족이나 지환족 2염기산 등이 적절하다.In the composition of the polyester resin, for example, terephthalic acid, isophthalic acid, orthophthalic acid, 1,5-naphthalic acid, 2,6-naphthalic acid, 4,4'-diphenyldicarboxylic acid, Aromatic dibasic acids such as 2,2'-diphenyldicarboxylic acid and 4,4'-diphenyletherdicarboxylic acid, adipic acid, azeline acid, sebacic acid, 1,4-cyclohexanedicarboxylic acid, 1,3 Aliphatic or alicyclic dibasic acids such as cyclohexanedicarboxylic acid, 1,2-cyclohexanedicarboxylic acid, 4-methyl-1,2-cyclohexanedicarboxylic acid, dimer acid, and the like.
또한, 상기 폴리에스테르수지의 조성물 중 글리콜성분으로는 에틸렌글리콜, 프로필렌 글리콜, 1,3-프로판디올, 2-메틸-1,3-프로판디올, 1,2-부탄디올, 1,3- 부탄디올, 1,4-부탄디올, 1,5-펜탄디올, 1,6-헥산디올, 3-메틸-1,5-펜탄디올, 네오펜틸글리콜, 디에틸렌글리콜, 디프로필렌글리콜, 2,2,4-트리메틸-1,3-펜탄디올, 사이클로디메타놀, 네오펜틸히드록시 피바린산 에스테르, 비스페놀 A의 에틸렌옥사이드 부가물 및프로필렌 옥사이드 부가물, 수소화 비스페놀A의 에틸렌 옥사이드 부가물 및 프로필렌옥사이드 부가물, 1,9-노난디올, 2-메틸옥탄디올, 1,10-도데칸디올, 2-부틸-2-에틸-1,3-프로판디올, 트리사이클로데칸디메타놀 등을 사용하며, 폴리에틸렌 글리콜, 폴리프로필렌 글리콜, 폴리테트라메틸렌글리콜 등 폴리에테르글리콜 성분 등을 사용할 수 있다. In addition, the glycol component in the polyester resin composition is ethylene glycol, propylene glycol, 1,3-propanediol, 2-methyl-1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1 , 4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 3-methyl-1,5-pentanediol, neopentylglycol, diethylene glycol, dipropylene glycol, 2,2,4-trimethyl- 1,3-pentanediol, cyclodimethol, neopentylhydroxy pivalinic acid ester, ethylene oxide adducts and propylene oxide adducts of bisphenol A, ethylene oxide adducts and propylene oxide adducts of hydrogenated bisphenol A, 1,9- Nonanediol, 2-methyloctanediol, 1,10-dodecanediol, 2-butyl-2-ethyl-1,3-propanediol, tricyclodecanedimethanol and the like, and polyethylene glycol, polypropylene glycol, poly Polyether glycol components, such as tetramethylene glycol, etc. can be used.
그리고, 상기 에폭시 수지와의 가교반응이 가능하도록 관능기를 부가하여 내열성을 향상시키기 위한 목적으로 측쇄에 관능기 부가형 성분을 첨가할 수 있다. 이러한 측쇄 관능기형 카르보닐산 성분은 벤조페논 테트라카르본산 2무수물이나 무수 트리멜리트산, 무수 피로멜리트산, 에틸렌글리콜비스안하이드로 트리멜리테이트 및 글리세롤트리스안하이드로트리멜리테이트 등을 포함한다. In addition, a functional group addition type component may be added to the side chain for the purpose of adding a functional group so as to enable crosslinking reaction with the epoxy resin to improve heat resistance. Such side-chain functional carbonyl acid components include benzophenone tetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, ethylene glycol bishydrohydrotrimellitate, glycerol trisian hydrotrimellitate, and the like.
상기 폴리에스테르수지의 적정 수평균 분자량은 다이본딩용 접착층의 접착특성 및 내열성 등의 측면에서 볼 때 5,000~200,000을 사용할 수 있으며, 더욱 바람직하게는 10,000 ~100,000 이내의 것을 사용하는 것이 좋다. The appropriate number average molecular weight of the polyester resin may be used from 5,000 to 200,000 in terms of adhesive properties and heat resistance of the adhesive layer for die bonding, and more preferably from 10,000 to 100,000.
또한, 상기 폴리이미드수지는 측쇄 또는 주쇠 사슬에 이미드 결합을 가지는 형태로서 한정되는 것은 아니나 수평균 분자량이 5,000~500,000 이내이며 바람직하게는 10,000~50,000 정도인 것이 적절하다. In addition, the polyimide resin is not limited to the form having an imide bond in the side chain or cast iron chain, but the number average molecular weight is within 5,000 to 500,000, preferably 10,000 to 50,000.
상기 폴리이미드 수지는 반응성 관능기를 가지지 않는 열가소성 폴리이미드계 수지와, 가열에 의해 열경화성 수지와 반응할 수 있는 관능기, 예를 들면 카르복실기 또는 하드록실기 등을 측쇄에 가지며 일반적으로 방향족 디아민과 방향족 테트라카르본산 2무수물과의 혼합물로부터 폴리아미드산 전구체을 합성하고 이것을 다시 가열함에 따라 탈수 이미드화 하는 것에 의해 올리고머상의 폴리이미드 수지를 얻을 수 있다.The polyimide resin has a thermoplastic polyimide resin having no reactive functional group and a functional group capable of reacting with the thermosetting resin by heating, such as a carboxyl group or a hardoxy group, on the side chain, and generally has an aromatic diamine and an aromatic tetracarb. An oligomer-like polyimide resin can be obtained by synthesizing a polyamic acid precursor from a mixture with a main acid dianhydride and dehydrating it by heating it again.
상기 열가소성 폴리이미드 수지의 중합에 사용하는 산 2무수물 모노머는 3,3＇,4,4＇-비페닐테트라카르본산2무수물, 3,3＇, 4,4＇-벤조페논테트라카르본산 2무수물, 4,4＇-옥시디프탈산 2무수물, 에틸렌글리콜 비스트리멜리트산2무수물, 4,4＇-비스페놀A 2무수물, 무수피로멜리트산, 2,3,6,7-나프탈렌테트라카르본산2무수물, 1,4,5,7-나프탈렌테트라카르본산2무수물, 1,2,5,6-나프탈렌테트라카르본산 2무수물, 1,2-(에틸렌)비스(트리멜리테이트산무수물), 1,3-(트리메틸렌)비스(트리메리 테이트산무수물) 등을 포함하며, 상기 물질들은 단독 또는 2종 이상 혼합해서 사용할 수 있다.The acid dianhydride monomer used for the superposition | polymerization of the said thermoplastic polyimide resin is 3,3 ', 4,4'- biphenyl tetracarboxylic dianhydride, 3,3', 4,4'- benzophenone tetracarboxylic dianhydride. , 4,4'-oxydiphthalic acid dianhydride, ethylene glycol bistrimellitic dianhydride, 4,4'-bisphenol A dianhydride, pyromellitic anhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride , 1,4,5,7-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1,2- (ethylene) bis (trimelitate dianhydride), 1,3 -(Trimethylene) bis (trimeric tate anhydride) and the like, and the above substances may be used alone or in combination of two or more thereof.
상기 산 2무수물과 반응하는 지방족 혹은 방향족 디아민은 메틸렌디아민,에틸 렌디아민, 테트라메틸렌디아민, 펜타메틸렌디아민, 헥사메틸렌디아민, 헵타메틸렌 디디아민, 옥타메틸렌디아민, 2,4-디아미노톨루엔, m-자일렌디아민, p-자일렌디 아민, m-페닐렌디아민, p-페닐렌디아민, 2,6-디아미노피리딘, 2,5-디아미노피리 딘, 1,4-디아미노사이클로헥산, 피페라진, 4,6-디메틸-m-페닐렌디아민, 2,5-디메 틸-p-페닐렌디아민, 4,4＇-디아미노디페닐프로판, 3,3＇-디아미노디페닐에탄, 4,4＇-디아미노디페닐메탄, 3,3＇-디아미노디페닐메탄, 4,4＇-디아미노디페닐설폰, 3,3＇-디아미노디페닐설폰, 4,4＇-디아미노디페닐에테르, 3,3＇-디아미노비페닐, 3,3＇-디메틸-4,4＇-디아미노비페닐, 1,3-비스(3-아미노페녹시)벤젠, 2,2-비스4 -(4-아미노페녹시) 페닐프로판, 1,3-비스(4-아미노페녹시)벤젠, 비스-4-(4-아미 노 페녹시)페닐설폰, 비스-4-(3-아미노페녹시)페닐설폰 및 p-비스(2-메틸-4- 아미노펜틸)벤젠 등을 포함하며, 상기 지방족 및 방향족 디아민은 단독 또는 2 종류 이상을 조합하여 사용할 수 있다.Aliphatic or aromatic diamines reacting with the acid dianhydride include methylenediamine, ethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, heptamethylene didiamine, octamethylenediamine, 2,4-diaminotoluene, m- Xylenediamine, p-xylenediamine, m-phenylenediamine, p-phenylenediamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 1,4-diaminocyclohexane, piperazine , 4,6-dimethyl-m-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenylethane, 4, 4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 4,4'-diaminodi Phenylether, 3,3'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 1,3-bis (3-aminophenoxy) benzene, 2,2-bis4 -(4-aminophenoxy) phenylpropane, 1,3-bis (4-amino Oxy) benzene, bis-4- (4-aminophenoxy) phenylsulfone, bis-4- (3-aminophenoxy) phenylsulfone, p-bis (2-methyl-4-aminopentyl) benzene and the like In addition, the said aliphatic and aromatic diamine can be used individually or in combination of 2 or more types.
그리고, 더욱 바람직하게 상기 폴리이미드 수지의 디아민 성분 중의 하나로서 디아미노폴리실록산을 이용할 수 있다. And more preferably, diamino polysiloxane can be used as one of the diamine components of the said polyimide resin.
상기 디아미노폴리실록산은 1,3-비스(3-아미노프로필)테트라메틸실록산, α,ω-비스(3-아미노프로필)폴리디메틸실록산, 1,3-비스(4-아미노페닐)테트라메틸실록산, α,ω-비스(4-아미노페닐)폴리디메틸실록산, 1,3-비스(3-아미노페닐)테트라메틸실록산, α,ω-비스(3-아미노페닐)폴리디메틸 실록산, 1,3-비스(3-아미노프로필)테트라페닐실록산, α,ω-비스(3-아미노프로필) 폴리디페닐실록산 등을 포함하며, 상기 물질을 단독 또는 2종 이상으로 혼합하여 사용할 수 있다. 이때, 상기 디아미노폴리실록산은 디아민성분 총량의 5~50 몰% 이내로 사용하는 것이 바람직하다.The diaminopolysiloxanes include 1,3-bis (3-aminopropyl) tetramethylsiloxane, α, ω-bis (3-aminopropyl) polydimethylsiloxane, 1,3-bis (4-aminophenyl) tetramethylsiloxane, α, ω-bis (4-aminophenyl) polydimethylsiloxane, 1,3-bis (3-aminophenyl) tetramethylsiloxane, α, ω-bis (3-aminophenyl) polydimethyl siloxane, 1,3-bis (3-aminopropyl) tetraphenylsiloxane, α, ω-bis (3-aminopropyl) polydiphenylsiloxane, and the like, which may be used alone or in combination of two or more thereof. At this time, the diamino polysiloxane is preferably used within 5 to 50 mol% of the total amount of the diamine component.
본 발명의 다이본딩용 접착층 조성물은 열경화성 수지를 포함하는데, 상기 열경화성 수지는 자외선 조사에 의해서는 경화하지 않지만, 가열함에 따라서는 삼차원 그물구조를 가져 피착체에 강고하게 접착하는 성질과 내열성을 가질 수 있는 수지를 포함한다. 바람직하게 에폭시 수지, 불포화 폴리에스테르수지, 열경화성 아크릴수지, 페놀수지, 디아릴프탈레이트수지 및 폴리우레탄수지 등을 포함할 수 있으며, 이러한 열경화성 수지는 단독 또는 2종 이상을 병용하여 사용할 수 있다.The adhesive layer composition for die bonding of the present invention includes a thermosetting resin, which is not cured by ultraviolet irradiation, but has a three-dimensional network structure and heat-resisting property to adhere to the adherend with heat. Contains resins that are present. Preferably, an epoxy resin, an unsaturated polyester resin, a thermosetting acrylic resin, a phenol resin, a diaryl phthalate resin, a polyurethane resin, etc. may be included, and these thermosetting resins may be used alone or in combination of two or more thereof.
한정되는 것은 아니나 상기 다이본딩용 접착층 조성물은 경화 전에는 낮은 용융점도를 가져 부착공정에 적용하기가 용이하며 또한 경화 후에는 고내열성을 나타내는 상반된 특성을 발현할 수 있다는 점에서, 본 발명에서는 에폭시 수지를 사용하는 것이 바람직하다.Although not limited, the adhesive layer composition for die bonding has a low melt viscosity before curing and is easy to be applied to an attaching process, and after curing, the adhesive layer composition may exhibit opposite characteristics indicating high heat resistance. It is preferable to use.
상기 에폭시 수지는 종래부터 공지된 여러 가지의 에폭시 수지가 이용될 수 있지만, 통상은, 분자량 300~5000 정도의 것을 사용할 수 있으며 더욱 바람직하게는 500~2000 이내인 고체상의 에폭시 수지를 사용할 수 있다. As the epoxy resin, various conventionally known epoxy resins can be used, but usually, those having a molecular weight of about 300 to 5000 can be used, and more preferably, a solid epoxy resin of 500 to 2000 or less can be used.
또한 상기 에폭시 수지의 경우에는 용융특성을 환구법에 의한 연화점을 기준으로 구분하는 것이 통례이므로, 고체상 에폭시 수지의 적정 연화점은 30~100℃, 바람직하게는 40~70℃ 이내로 할 수 있다. 상기 연화점이 30℃ 이하가 되면 상온에서 접착층 표면의 점착력이 높아져 다이싱 후 칩 픽업성이 저하되며, 연화점이 100℃ 이상이 되면 150℃ 칩부착 공정온도에서 충분한 수지유동성을 얻기 어렵기 때문에 칩 적층시 하부의 PCB 기판이나 칩 상부의 패턴을 메우는 효과가 떨어지므로 부착력 문제가 발생할 수 있다.In the case of the epoxy resin, since it is common to classify the melting characteristics based on the softening point by the round ball method, the appropriate softening point of the solid epoxy resin may be 30 to 100 ° C, preferably 40 to 70 ° C. When the softening point is 30 ℃ or less, the adhesive force on the surface of the adhesive layer is increased at room temperature, chip picking properties after dicing is reduced, and when the softening point is 100 ℃ or more, it is difficult to obtain sufficient resin fluidity at 150 ℃ chip attach process temperature, chip stacking Since the effect of filling the PCB substrate at the bottom or the pattern at the top of the chip is reduced, adhesion problems may occur.
구체적으로 한정되는 것을 아니나, 상기 에폭시 수지는 비스페놀 A형, 비스페놀 F형, 비스페놀 S형, 취소화 비스페놀 A형, 수소첨가 비스페놀 A형, 비스페놀 AF형, 비페닐형, 나프탈렌형, 플로렌형, 페놀노볼락형, 크레졸노보락형, 트리스하이드록실페닐메탄형, 테트라페닐메탄형 등의 2 관능 또는 다관능 에폭시 수지가 이용될 수 있으며, 더욱 바람직하게는 경화성, 접착성 및 내열, 내습성 등의 물성면에서 비교적 우수한 비스페놀 A형, 크레졸노볼락형, 페놀노볼락형 에폭시 수지 및 상기 물질을 2종 이상 병용해서 사용할 수 있다.Although not specifically limited, the epoxy resin may be bisphenol A type, bisphenol F type, bisphenol S type, undoped bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, florene type, Bifunctional or polyfunctional epoxy resins such as phenol novolak type, cresol novolak type, trishydroxyphenylmethane type and tetraphenylmethane type can be used, and more preferably hardenability, adhesiveness and heat resistance, moisture resistance, etc. Bisphenol A type, cresol novolak type, phenol novolak type epoxy resins which are relatively excellent in physical properties and the above materials can be used in combination of two or more kinds.
상기 다이본딩용 접착층 조성물에 사용할 수 있는 페놀형 에폭시 수지 경화제로서는 하기 화학식 1로 표시되는 페놀수지를 포함한다.As a phenol type epoxy resin hardener which can be used for the said bonding layer composition for die bonding, the phenol resin represented by following General formula (1) is included.
[화학식 1][Formula 1]
Figure PCTKR2012001359-appb-I000002
Figure PCTKR2012001359-appb-I000002
(상기 식에서 R1은 각각 동일하거나 상이할 수 있으며 수소원자, 탄소수 1 내지 10의 직쇄 또는 분자쇄 알킬기, 환상 알킬기, 수산기 또는 아릴기를 나타내고 R2는 페놀, 크레졸 또는 아미노트리아진을 나타내고 n은 1 내지 3의 정수를 나타낸다.)Wherein each R 1 may be the same or different and represents a hydrogen atom, a straight or molecular chain alkyl group having 1 to 10 carbon atoms, a cyclic alkyl group, a hydroxyl group or an aryl group, and R 2 represents a phenol, cresol or aminotriazine and n is 1 To an integer of 3).
상기 화학식 1로 표시되는 페놀수지의 바람직한 예로는 페놀 노볼락 수지, 크레졸 노볼락 수지, 아미노트리아진 노볼락 수지를 들 수 있고, 이 중 연화점이 120℃ 이상인 것으로 한다. Preferred examples of the phenol resin represented by the formula (1) include phenol novolak resins, cresol novolak resins, aminotriazine novolak resins, and softening points of which are 120 ° C or higher.
페놀수지의 평균 수산기 당량이 100 내지 300g/eq인 것이 바람직하며 100g/eq 미만이면 수산기(OH)로 인해 흡습율이 증가하여 저장 안정성이 우려되고 300g/eq 초과면 경화 후 유리전이온도가 저하되어 신뢰성이 저하될 우려가 있다. 상기 페놀수지의 함량은 조성물 전체 100 중량부에 대해서 5 내지 20 중량부의 범위에 포함되는 것이 바람직하다.It is preferable that the average hydroxyl group equivalent of the phenol resin is 100 to 300 g / eq. If it is less than 100 g / eq, the hygroscopicity increases due to the hydroxyl group (OH), so that the storage stability is feared. If it exceeds 300 g / eq, the glass transition temperature is lowered after curing. There is a fear that the reliability is lowered. The content of the phenol resin is preferably included in the range of 5 to 20 parts by weight based on 100 parts by weight of the total composition.
경화제 혼입량이 5 중량부 미만일 경우에는 경화성 수지의 경화효과가 부족하여 내열성 저하가 초래되며 반면에 20 중량부를 초과하여 혼입하면 수지와의 반응성이 높아지게 되어 접착필름의 취급성, 장기보관성 등의 물성특성이 크게 떨어지는 문제가 발생하게 된다.When the amount of the curing agent is less than 5 parts by weight, the curing effect of the curable resin is insufficient, resulting in a decrease in heat resistance. On the other hand, when the amount of the curing agent is mixed in an amount exceeding 20 parts by weight, the reactivity with the resin is increased. The problem is that the characteristics are greatly reduced.
또한, 상기 다이본딩용 접착층 조성물에는 경화촉진제를 배합하여 사용할 수 있으며, 종래부터 알려져 온 여러 가지의 경화촉진제가 사용 가능한데, 특히 아민계, 이미다졸계, 인계, 붕소계 및 인-붕소계 등의 경화촉진제를 사용할 수 있다. In addition, a curing accelerator may be used in the die-bonding adhesive layer composition, and various curing accelerators known in the art may be used, in particular, such as amine, imidazole, phosphorus, boron, and phosphorus-boron. A curing accelerator can be used.
이때, 상기 경화촉진제의 최적 배합량은 열경화성 수지 100 중량부에 대해서, 바람직하게는 0.01~10 중량부, 더욱 바람직하게는 0.5~5 중량부 비율이 적합하며 단독 또는 2종 이상을 병용하여 사용할 수도 있다.At this time, the optimum blending amount of the curing accelerator is preferably from 0.01 to 10 parts by weight, more preferably from 0.5 to 5 parts by weight with respect to 100 parts by weight of the thermosetting resin, and may be used alone or in combination of two or more. .
점착층Adhesive layer
본 발명의 반도체 패키지용 접착필름에 있어서, 점착층은 자외선 경화 전에 일정한 점착력을 나타냄과 동시에 점착필름으로서의 연성 및 강도를 부여하는 지지체로의 역할을 한다.In the adhesive film for semiconductor package of the present invention, the adhesive layer exhibits a constant adhesive force before ultraviolet curing and at the same time serves as a support for imparting ductility and strength as an adhesive film.
상기 점착층은 고분자량의 아크릴공중합체 또는 고무성분과 탄소-탄소 2중 결합 등의 방사선 경화성의 작용기를 가짐에 따라, 자외선 조사에 따라 점착성 감소시키는 역할의 광경화성 올리고머성분, 열경화제, 및 고분자 공중합 성분을 일차 열경화시킴에 따라 점착성분들 간의 응집력을 높여주는 가교제성분 및 광개시제 성분들로 구성될 수 있다.As the adhesive layer has a high molecular weight acrylic copolymer or a rubber component and a radiation-curable functional group such as a carbon-carbon double bond, a photocurable oligomer component, a thermosetting agent, and a polymer having a role of reducing adhesiveness due to ultraviolet irradiation It may be composed of a cross-linking agent component and a photoinitiator component to increase the cohesion between the adhesive components as the primary thermal curing of the copolymerization component.
상기 고분자량 아크릴계 공중합체는 한정되는 것은 아니나 (메타) 아크릴산 에스테르 모노머 및 (메타) 아크릴산 유도체로부터 얻을 수 있는 탄소수가 1~18 이내인 아크릴산 알킬 에스테르 공중합체 등이 이용될 수 있으며, 바람직하게는 아크릴산 메틸, 메타크릴산 메틸, 아크릴산 에틸, 메타크릴산 에틸, 아크릴산 프로필, 메타크릴산 프로필, 아크릴산 부틸, 메타아크릴산 부틸 등을 사용할 수 있다. Although the high molecular weight acrylic copolymer is not limited, acrylic acid alkyl ester copolymers having 1 to 18 carbon atoms that can be obtained from (meth) acrylic acid ester monomers and (meth) acrylic acid derivatives may be used, preferably acrylic acid. Methyl, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate and the like can be used.
또한, 상기 고분자량 아크릴계 공중합체로 형성된 자외선 경화형 웨이퍼 다이싱용 점착층은 점착필름의 응집력 및 내열성 등의 개질을 목적으로 알킬에스테르와 가교반응을 일으킬 수 있는 반응기를 가지는 모노머 성분을 포함할 수 있다.In addition, the pressure-sensitive adhesive layer for UV-curable wafer dicing formed of the high molecular weight acrylic copolymer may include a monomer component having a reactor capable of causing a crosslinking reaction with the alkyl ester for the purpose of modifying the cohesive force and heat resistance of the pressure-sensitive adhesive film.
상기 모노머 성분은 카르복실에틸(메타) 아크릴레이트, 카르복실펜틸(메타) 아크릴레이트, 이타콘산, 말레인산, 후말산등의 카르복실기함유 모노머와 무수 말레산, 무수 이타콘산등의 산무수물 모노머, (메타)아크릴산 2-히드록시 에틸, (메타)아크릴산 2-히드록시 프로필, (메타)아크릴산 4-히드록시 부틸, (메타) 아크릴산 6-히드록시 헥실, (메타)아크릴산 8-히드록시 옥틸, (4-히드록시 메틸 시클로 헥실) 메틸(메타) 아크릴레이트 등의 히드록실기함유 모노머, 그리고 아크릴아미드, 아크릴로니트릴 등을 사용할 수 있으며, 이들 반응기 함유 모노머 성분들은 경우에 따라서 1종 또는 2종 이상을 혼용하여 사용할 수 있다. 특히 피착체와의 밀착성이나 점착성이 조절이 용이하다는 점에서 히드록시 에틸 아크릴레이트 등의 수산기 함유 모노머를 도입할 수 있다.The monomer component includes carboxyl group-containing monomers such as carboxyl ethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid and fumaric acid, and acid anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (4 Hydroxyl group-containing monomers such as hydroxy methyl cyclohexyl) methyl (meth) acrylate, and acrylamide, acrylonitrile, etc. may be used, and these reactor-containing monomer components may be one or two or more Can be used interchangeably. In particular, hydroxyl group-containing monomers such as hydroxyethyl acrylate can be introduced in that adhesion and adhesion with the adherend are easy to control.
상기에서 상술한 고분자량의 아크릴계 공중합체는 점착필름의 초기 점착력 및 점착성분들 간의 응집력 향상을 위하여 분자량이 30,000~500,000 이내인 것이 적당하며 더욱 바람직하게는 50,000~200,000 이내로 형성할 수 있다. The above-mentioned high molecular weight acrylic copolymer may have a molecular weight of 30,000 to 500,000 or less, and more preferably 50,000 to 200,000, in order to improve the initial adhesion of the adhesive film and the cohesion between the adhesive components.
만약 상기 분자량이 상기 범위 미만인 경우에는 점착필름의 응집력이 떨어져 자외선 경화 후 점착제 성분이 상대기재로 전사되는 현상을 초래하게 되며, 상기 범위를 초과하는 경우에는 타 점착성분들과의 상용성이 떨어져 균일한 점착특성을 구현할 수 없을 뿐만 아니라 자외선 경화 시 상분리 현상이 나타나 칩 픽업 용이성이라는 본래의 특성을 저해하는 문제가 발생할 수 있다. If the molecular weight is less than the above range, the cohesive force of the pressure-sensitive adhesive film is reduced, resulting in the phenomenon that the pressure-sensitive adhesive component is transferred to a relative substrate after UV curing, and when the molecular weight exceeds the above range, the compatibility with other pressure-sensitive adhesive components is poor and uniform. Not only the adhesive property can be realized but also a phase separation phenomenon occurs during UV curing, which may cause a problem of inhibiting the original property of chip pick-up ease.
또한 상기 아크릴계 공중합체의 적정 혼입량의 경우 점착층 조성물 100 중량부에 대하여 50~80 중량부 사용하는 것이 바람직하다. 그 사용량이 50 중량부 미만인 경우에는 점착필름의 점착력이 충분하지 못하게 되며, 80 중량부 초과인 경우에는 자외선 경화 후에도 점착력이 너무 높고 감광성 올리고머들 간의 원활한 광중합을 저해하여 원활한 칩 픽업성을 얻을 수 없는 문제가 발생할 수 있다.In addition, it is preferable to use 50-80 weight part with respect to 100 weight part of adhesion layer compositions for the appropriate mixing amount of the said acrylic copolymer. If the amount is less than 50 parts by weight, the adhesive force of the adhesive film may not be sufficient. If the amount is more than 80 parts by weight, the adhesive force may be too high even after UV curing, and the smooth photopolymerization between the photosensitive oligomers may be inhibited, thereby preventing smooth chip pickup. Problems may arise.
상기 자외선 경화형 웨이퍼 다이싱용 점착층은 상기 아크릴계 공중합체 성분과 더불어 자외선에 의한 광경화 반응을 진행시키기 위하여 분자 내 주쇄 또는 측쇄에 적어도 1개 이상의 중합성 탄소-탄소 이중결합을 갖는 광경화형 올리고머를 필수적으로 사용할 수 있다. The ultraviolet-curable wafer dicing adhesive layer is essential to the photocurable oligomer having at least one polymerizable carbon-carbon double bond in the main chain or side chain in the molecule in order to advance the photocuring reaction by ultraviolet rays together with the acrylic copolymer component. Can be used as
이때, 상기 광경화형 올리고머로서는 우레탄 올리고머, 우레탄(메트)아크릴레이트, 트리메틸올 프로판트리(메트)아크릴레이트, 테트라메틸올메탄테트라(메트)아크릴레이트, 펜타에리트리톨트리(메트)아크릴레이트, 펜타에리트리톨테트라(메트)아크릴레이트, 디펜타에리트리톨모노하이드록시펜타(메트)아크릴레이트, 디펜타에리트리톨헥사(메트)아크릴레이트 및 1,4-부탄디올디(메트)아크릴레이트 올리고머 등을 포함하며 이들 광경화형 올리고머는 점착특성 조절면에서 더욱 효과를 높이기 위하여 1종 또는 2종 이상 혼용하여 사용할 수 있다.In this case, as the photocurable oligomer, urethane oligomer, urethane (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythrate Lititol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanedioldi (meth) acrylate oligomer and the like; The photocurable oligomer may be used alone or in combination of two or more in order to increase the effect in terms of adhesion characteristics.
그리고, 상기 광경화형 올리고머의 최적 혼입량은 점착층 조성물 100 중량부 에 대하여 10~30중량부가 바람직하다. And, the optimum amount of the photocurable oligomer is preferably 10 to 30 parts by weight based on 100 parts by weight of the adhesive layer composition.
상기 범위 미만일 경우에는 자외선 경화에 의한 점착력 감소효과가 충분하지 못하며, 상기 범위 초과일 경우에는 경화되지 못한 미반응 올리고머 함량이 많아져 점착력을 상승시키는 문제가 발생할 수 있다.If it is less than the above range, the effect of reducing the adhesive force due to ultraviolet curing is not sufficient, and if it exceeds the above range, an unreacted oligomer content that is not cured increases, which may cause a problem of increasing adhesive force.
또한, 본 발명의 접착필름이 다층구조 임에 따라 구조상 상기 자외선 경화형 웨이퍼 다이싱용 점착층과 밀착되는 다이본딩용 접착층과 자외선 조사 후, 계면 점착력을 보다 효과적으로 낮추기 위해는 실리콘 아크릴레이트 올리고머를 혼용하여 사용하는 것이 바람직하다. In addition, since the adhesive film of the present invention has a multi-layered structure, in order to more effectively lower the interfacial adhesive force after irradiation with the die bonding adhesive layer and ultraviolet irradiation, which are in close contact with the adhesive layer for ultraviolet curing wafer dicing, the silicone acrylate oligomer is used in combination. It is desirable to.
하지만 실리콘 아크릴레이트 올리고머의 경우 점착성분 중에 과량으로 투입할 경우 자외선 조사 후 미반응 올리고머가 다이본딩용 접착층으로 이행하여 이후의 칩 부착 공정에서 칩과 기재와의 접착력을 떨어뜨리는 문제점을 유발할 수 있으므로 실리콘 아크릴레이트 혼입량은 광경화형 올리고머 사용량의 20%를 넘지 않는 것이 바람직하다.However, in the case of silicone acrylate oligomer, when excessively added to the adhesive component, the unreacted oligomer after UV irradiation can be transferred to the die-bonding adhesive layer, which may cause a problem that the adhesion between the chip and the substrate may be degraded in the subsequent chip attaching process. The amount of acrylate incorporated is preferably not more than 20% of the amount of photocurable oligomer used.
상기 자외선 경화형 웨이퍼 다이싱용 점착층은 자외선 조사 전의 아크릴계 점착제 성분에 내부 경화제를 적당하게 혼용함으로써 수평균 분자량을 높여 초기 접착력 및 응집력을 조절할 수도 있으며, 상기 내부 경화제는 열경화가 가능한 에폭시계 경화제, 인산염계 경화제 또는 이소시아네이트계 경화제를 첨가하여 사용할 수 있으며, 더욱 바람직하게는 경화반응온도, 속도 및 점착력 등을 조절하기 용이한 이소시아네이트계 경화제를 사용할 수 있다.The UV curable wafer dicing adhesive layer may adjust the initial adhesive strength and cohesion by increasing the number average molecular weight by appropriately mixing the internal curing agent in the acrylic pressure-sensitive adhesive component before ultraviolet irradiation, the internal curing agent is an epoxy-based curing agent, phosphate that can be thermally cured An isocyanate-based curing agent or an isocyanate-based curing agent can be added and used, and more preferably, an isocyanate-based curing agent which can easily control the curing reaction temperature, speed, and adhesive force can be used.
상기 내부 경화제 중 이소시아네이트경화제는 방향족 다가 이소시아네이트화합물, 지환족 다가 이소시아네이트화합물, 지방족 다가 이소시아네이트화합물 및 이들의 다가 이소시아네이트 화합물의 3량체 그리고, 이들 다가 이소시아네이트화합물과 폴리올화합물을 반응시켜 얻어지는 말단 이소시아네이트 우레탄 예비중합체 등을 포함할 수 있다.The isocyanate hardener in the internal curing agent is an aromatic polyisocyanate compound, an alicyclic polyisocyanate compound, an aliphatic polyisocyanate compound and a trimer of polyhydric isocyanate compounds thereof, and terminal isocyanate urethane prepolymers obtained by reacting these polyisocyanate compounds with a polyol compound. It may include.
상기 유기 다가 이소시아네이트화합물은 점착층 조성물 100 중량부에 대해 통상 0.1~10 중량부, 특히 1~5 중량부 배합하는 것이 바람직하며, 상기 내부 경화제를 포함하는 상기 점착제는 기재층 팽창시 또는 픽업시에 발생하는 정전기를 억제하여 칩 크랙방지 효과가 있다는 점에서 대전방지제를 첨가할 수도 있다.The organic polyhydric isocyanate compound is preferably added in an amount of 0.1 to 10 parts by weight, in particular 1 to 5 parts by weight, based on 100 parts by weight of the pressure-sensitive adhesive layer composition. It is also possible to add an antistatic agent in that it has an effect of preventing chip crack by suppressing static electricity generated.
또한, 상기의 점착제 중에 자외선 조사에 따라 광경화형 올리고머에 함유된 탄소-탄소 이중결합기 간의 부가반응을 일으킬 수 있는 자유라디칼을 분해, 생성하는 기능의 광중합 개시제를 혼입하여 적은 자외선 조사량에도 효율적인 광경화를 일으킬 수 있다. 이러한 광개시제로서는 250~800 nm의 파장의 빛을 조사하는 것으로써 활성화 되는 것이면 모두 사용가능하며 1종 또는 2종 이상 병용하여 사용할 수도 있다.In addition, a photopolymerization initiator having a function of decomposing and generating free radicals that may cause an addition reaction between carbon-carbon double bond groups contained in the photocurable oligomer in accordance with ultraviolet irradiation is mixed in the pressure-sensitive adhesive to provide efficient photocuring even at a low ultraviolet irradiation amount. Can cause. As such photoinitiators, any one can be used as long as it is activated by irradiating light of a wavelength of 250 to 800 nm, and may be used alone or in combination of two or more thereof.
이러한 광중합 개시제로서는 벤조페논, 아세토페논, 벤조인, 벤조인 메틸 에테르, 벤조인 에틸 에테르, 벤조인 이소프로필 에테르, 벤조인 이소부틸 에테르, 벤조인 안식향산, 벤조인안식향산 메틸, 벤조인디메틸케탈, 2,4-디에틸티옥산톤, 히드록시 시클로헥실 페닐 케톤, 벤질 디페닐 설파이드, 테트라메틸티우람 모노설파이드, 아조비스이소 부티로니트릴, 벤질, 디벤질, 디아세틸 및 β-클로로안트라퀴논 등을 포함하며, 점착제 조성물의 0.5~5 중량부 이내로 투입하는 것이 바람직하다. 만약 상기의 함량범위를 벗어나면 광개시효율이 떨어지거나 점착제 보관상에 문제가 발생할 수 있다.Such photopolymerization initiators include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl, benzoin dimethyl ketal, 2 , 4-diethyl thioxanthone, hydroxy cyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl and β-chloroanthraquinone It is preferable to include within 0.5 to 5 parts by weight of the pressure-sensitive adhesive composition. If it is out of the above content range may lower the photo-initiation efficiency or problems in storage of the adhesive.
기재층Substrate layer
기재층의 경우 그 종류는 특히 한정되지는 않지만, 자외선 경화를 효율적으로 일으키게 하기 위해서는 자외선 투과성 기재를 사용할 수 있다. In the case of a base material layer, although the kind is not specifically limited, In order to make UV harden | curing efficiently, an ultraviolet permeable base material can be used.
더욱 자세히 상기 자외선 투과성 기재는 폴리에틸렌, 폴리프로필렌, 폴리에틸렌테레프탈레이트, 폴리우레탄, 에틸렌-아크릴산에틸 공중합체, 에틸렌-아크릴산메틸 공중합체, 폴리부텐, 폴리부타디엔, 폴리메틸펜텐, 폴리염화비닐, 에틸렌비닐 아세테이트, 폴리스티렌, 폴리카보네이트 및 이들 중 두 가지 이상의 성분으로 상호 적층된 것 또는 가교시킨 것을 사용할 수 있다. More specifically, the UV-transmitting substrate is polyethylene, polypropylene, polyethylene terephthalate, polyurethane, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, ethylene vinyl acetate , Polystyrene, polycarbonate, and those laminated or crosslinked with two or more of these components may be used.
또한, 상기 자외선 투과성 기재는 1축 또는 2축 연신처리 등에 의해 열 수축성을 부여할 수 있으며 상기 열 수축성은 다이싱 후, 기재층이 열 수축 됨에 따라 기재상의 점착층과 다이본딩용 접착제 층간의 접착면적을 줄여주는 효과를 발현하여 칩 픽업을 용이하게 해 주는 부수적인 효과를 얻을 수 있다.In addition, the UV-transmissive substrate may impart heat shrinkability by a uniaxial or biaxial stretching treatment, and the heat shrinkability is the adhesion between the adhesive layer on the substrate and the adhesive layer for die bonding as the substrate layer is heat shrinked after dicing. An additional effect of reducing the area can be obtained to facilitate chip pick-up.
상기 기재층의 표면은 기재층 상에 형성되는 점착층과의 밀착성을 향상시키기 위하여 코로나처리, 플라즈마처리, 크롬산처리 등의 물리적 또는 화학적 처리를 할 수 있다. 그러나 상기 기재층 성분들 중 폴리염화비닐과 같이 반도체 웨이퍼의 표면을 오염시킬 수 있는 염소 이온을 다량 포함하고 있는 안정제 및 가소제 등을 함유하고 있는 성분은 가급적 사용하지 않는 것이 바람직하다. The surface of the substrate layer may be subjected to physical or chemical treatment such as corona treatment, plasma treatment, chromic acid treatment, etc. in order to improve adhesion with the adhesive layer formed on the substrate layer. However, it is preferable not to use a component containing a stabilizer, a plasticizer, and the like containing a large amount of chlorine ions, which may contaminate the surface of the semiconductor wafer, such as polyvinyl chloride.
상기 기재층 두께는 특히 한정되지는 않지만 20~200μm가 바람직하며, 반도체 제조공정에서 다이싱 된 칩의 픽업을 원활하게 하기 위한 익스팬딩성 면에서 두께는 50~150μm인 것이 더욱 바람직하다. Although the thickness of the base layer is not particularly limited, it is preferably 20 to 200 μm, and more preferably 50 to 150 μm in terms of expandability for smoothly picking up the diced chips in the semiconductor manufacturing process.
상기 기재층 상에 형성되는 자외선 경화형 웨이퍼 다이싱용 점착층의 경우 종래의 반도체 패키지 제조공정에 있어서 다이싱공정 용도로 일반적으로 시판되고 있는 자외선 경화형 다이싱필름 제품들 중에서 적합한 제품을 선정하여 사용하거나 점착층을 직접 제조하여 사용할 수도 있다.In the case of the adhesive layer for UV-curable wafer dicing formed on the substrate layer, a suitable product is selected from among UV-curable dicing film products generally used for dicing process in a conventional semiconductor package manufacturing process, or used for adhesion. The layer can also be prepared and used directly.
이하 본 발명에 따른 실시예 및 본 발명에 따르지 않는 비교예를 통하여 본 발명을 더욱 상세히 설명하지만 본 발명의 범위를 하기에 제시한 실시예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail through examples according to the present invention and comparative examples not according to the present invention, but the scope of the present invention is not limited to the examples given below.
점착층의 제조Preparation of Adhesive Layer
(A1) 냉각수를 이용하여 80℃로 온도를 유지할 수 있는 1ℓ 유리 반응기에 교반기와 환류콘덴서를 설치하고 온도계로 반응시간에 따른 온도변화를 감지할 수 있는 장치를 이용하여 중합하였다. 에틸아세테이트와 중합하려고 하는 부틸아크릴레이트 48.17g, 에틸아크릴레이트 10.01g 및 2-히드록시에틸메타아크릴레이트 3.26g을 중합 반응기에 넣고 질소를 충진한 후 30분간 교반하면서 가스를 제거하였다. 그리고, 중합개시제로서 벤조일퍼옥사이드(70%) 0.54g을 에틸아세테이트에 녹여 적하깔대기를 이용하여 적하시킨 후, 80℃에서 12시간 환류시켜 중합을 실시하였다. 중합 후의 고형분의 함량을 40%가 되도록 에틸아세테이트 용매로 보정하여 점도가 23℃ 온도에서 10,000-15,000cps 이내인 아크릴 점착제 용액을 얻었다. (A1) A stirrer and reflux condenser were installed in a 1 L glass reactor capable of maintaining a temperature at 80 ° C. using cooling water, and polymerized using a device capable of detecting a temperature change according to reaction time with a thermometer. 48.17 g of butyl acrylate to be polymerized with ethyl acetate, 10.01 g of ethyl acrylate, and 3.26 g of 2-hydroxyethyl methacrylate were placed in a polymerization reactor, and charged with nitrogen to remove gas while stirring for 30 minutes. Then, 0.54 g of benzoyl peroxide (70%) was dissolved in ethyl acetate as a polymerization initiator and added dropwise using a dropping funnel, followed by polymerization at reflux for 12 hours at 80 ° C. After the polymerization, the content of the solid content was adjusted to 40% with ethyl acetate solvent to obtain an acrylic pressure-sensitive adhesive solution having a viscosity of 10,000-15,000 cps at a temperature of 23 ° C.
상기 점착제 용액 35g에 방향족 다가 이소시아네이트 경화제로 코로네이트-L(니폰폴리우렌탄사) 0.8g, 광경화형 올리고머로 CN-940(우레탄아크릴레이트, 사토머사) 8g 및 광개시제로 이가큐어184(시바스페셜티사) 0.5g을 용제 내에서 잘 혼합한 후 두께가 100um인 폴리프로필렌필름 재질의 기재필름상에 상기 광경화형 점착제 조성물을 두께가 10um가 되도록 균일하게 도포한 후 80℃, 10분 건조시킴으로써 자외선 경화형 다이싱 필름을 얻을 수 있었다.To 35 g of the pressure-sensitive adhesive solution, 0.8 g of coronate-L (Nippon Polyuretan Co.) as an aromatic polyisocyanate curing agent, 8 g of CN-940 (urethane acrylate, Satomer Co.) as a photocurable oligomer, and Igacure 184 (Ciba Specialty Co.) as a photoinitiator 0.5 g was mixed well in a solvent, and then uniformly coated the photocurable pressure-sensitive adhesive composition to a thickness of 10 um on a polypropylene film base film having a thickness of 100 um, followed by drying at 80 ° C. for 10 minutes, followed by ultraviolet curing dicing. Film was obtained.
(A2) (A1)에서 제조한 아크릴점착제 용액 35g에 경화제로 코로네이트-L(니폰폴리우렌탄사) 0.8g과 광경화형 올리고머로 우레탄아크릴레이트(사토머사, CN-940) 3.8g, 실리콘아크릴레이트(사토머사, CN-9800) 0.6g 및 광개시제로 이가큐어184(시바스페셜티사) 0.2g을 혼합한 것을 제외하고는 모두 동일한 조건으로 다이싱용 점착필름을 얻었다.(A2) 3.8 g of urethane acrylate (Sartomer, CN-940) was used as 35 g of an acrylic adhesive solution prepared in (A1) as a curing agent and 0.8 g of coronate-L (Nippon Polyuretan Co.) as a curing agent and a photocurable oligomer. A dicing adhesive film was obtained under the same conditions except that 0.6 g (Sartomer, CN-9800) and 0.2 g of Igacure 184 (Ciba Specialty Co.) were mixed with a photoinitiator.
(A3) 상기 점착제 중합물과의 특성비교를 위하여 일반품인 자외선 경화형 다이싱점착필름(일본 전기화학사 제조 UV경화형 점착필름, 제품명 : UHP-110M3)을 이용하였다.(A3) A UV curable dicing adhesive film (UV curable adhesive film manufactured by Nippon Electric Chemical Co., Ltd., product name: UHP-110M3) was used as a property comparison with the pressure-sensitive adhesive polymer.
접착층의 제조Preparation of Adhesive Layer
하기의 표 1에서와 같이 아크릴, 폴리에스테르수지, 폴리이미드수지 등의 열가소성수지와 에폭시 수지, 페놀수지 및 경화촉진제로 구성되는 열경화성 수지의 성분들을 동표에 나타내는 비율로 배합한 다이본딩용 접착층 조성물과 이 혼합용액을 이형처리한 폴리에스테르 필름 상에 도포한 후 140℃에서 5분 동안 열풍 건조기내에서 혼합용제를 건조, 제거시킴으로써 두께가 20um인 B-스테이지 특성의 다이본딩용 접착필름을 얻었을 수 있었다.As shown in Table 1 below, an adhesive layer composition for die bonding, comprising a mixture of thermoplastic resins such as acrylic resins, polyester resins, polyimide resins, epoxy resins, phenol resins, and curing accelerators in the ratios shown in the table. After applying the mixed solution on a release-treated polyester film, the mixed solvent was dried and removed in a hot air dryer at 140 ° C. for 5 minutes to obtain a B-stage die-bonding adhesive film having a thickness of 20 μm. there was.
표 1
다이본딩용 접착층
B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11
에폭시1 5 20 20 40 40 5 40 20 20 20
에폭시2 10 15 20 4 15 10 15 15 15
에폭시3 10 15 25
에폭시4 10 5
경화제1 10 6 13 20 4 23
경화제2 8 9 6 5
경화제3 10
경화제4 10
경화제5 10
열가소성수지1 40 35 20 15 14 60 40 15 35 35 35
열가소성 수지2 9
열가소성 수지3 36 11 6 24 30 6 11 11 11
열가소성 수지4 8 5 5 8 8 8
경화촉진제 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
첨가제 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Table 1
Adhesive layer for die bonding
B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11
Epoxy
1 5 20 20 40 40 5 40 20 20 20
Epoxy 2 10 15 20 4 15 10 15 15 15
Epoxy 3 10 15 25
Epoxy 4 10 5
Curing agent 1 10 6 13 20 4 23
Curing agent 2 8 9 6 5
Hardener 3 10
Curing agent 4 10
Curing agent 5 10
Thermoplastic 1 40 35 20 15 14 60 40 15 35 35 35
Thermoplastic 2 9
Thermoplastics3 36 11 6 24 30 6 11 11 11
Thermoplastic 4 8 5 5 8 8 8
Curing accelerator 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
additive 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
에폭시 수지1 : 비스페놀 A 에폭시Epoxy Resin 1: Bisphenol A Epoxy
(국도화학 YD-011 당량:450g/eq, 연화점:70℃ )(Kukdo Chemical YD-011 Equivalent: 450 g / eq, Softening Point: 70 ° C)
에폭시 수지2 : 크레졸노볼락 에폭시Epoxy Resin 2: Cresol Novolac Epoxy
(국도화학 YDCN-505 당량:200g/eq, 연화점:62℃)(Kukdo Chemical YDCN-505 Equivalent: 200 g / eq, Softening Point: 62 ° C)
에폭시 수지3 : 크레졸노볼락 에폭시Epoxy Resin 3: Cresol Novolac Epoxy
(국도화학 YDCN-509 당량:205g/eq,연화점:93℃)(Kukdo Chemical YDCN-509 Equivalent: 205 g / eq, Softening Point: 93 ° C)
에폭시 수지4 : 비스페놀 A 에폭시Epoxy Resin 4: Bisphenol A Epoxy
(국도화학 YD-128 당량:180g/eq)(Kukdo Chemical YD-128 Equivalent: 180 g / eq)
경화제1 : 페놀노볼락수지Curing agent 1: phenol novolak resin
(코오롱유화 KPH-F2004, OH당량:106g/eq, 연화점:120℃)(Kolon emulsified KPH-F2004, OH equivalent: 106 g / eq, softening point: 120 degreeC)
경화제2 : 아미노트리아진노볼락수지Curing agent 2: aminotriazine novolak resin
(다이니폰잉크화학공업 LA-3018-50P, OH당량:151g/eq, N=18%, 연화점: 125℃)(Dainipon Ink and Chemicals Industry LA-3018-50P, OH Equivalent: 151g / eq, N = 18%, Softening Point: 125 ℃)
경화제3 : 비스페놀A노볼락수지Curing agent 3: Bisphenol A novolac resin
(다이니폰잉크화학공업 KH-6021, OH당량:118g/eq, 연화점:132℃)(Dinipon Ink & Chemicals Co., Ltd. KH-6021, OH equivalent: 118g / eq, softening point: 132 ℃)
경화제4 : 페놀노볼락수지Curing agent 4: Phenolic novolac resin
(코오롱유화 KPE-F2000, OH당량:106g/eq, 연화점:66℃)(Kolon emulsified KPE-F2000, OH equivalent: 106 g / eq, softening point: 66 degrees Celsius)
경화제5 : 크레졸노볼락수지Curing agent 5: Cresol novolac resin
(코오롱유화 KCE-F2110, OH당량:120g/eq, 연화점:111℃)(Kolon emulsified KCE-F2110, OH equivalent: 120 g / eq, softening point: 111 degrees Celsius)
가소성수지1 : 아크릴산공중합체Plastic Resin 1: Acrylic Copolymer
(나가세켐텍 WS-023, 중량평균분자량(Mw):500,000, 유리전이온도:-5℃)(Nagase Chemtech WS-023, weight average molecular weight (Mw): 500,000, glass transition temperature: -5 ℃)
가소성수지2 : 폴리이미드수지Plastic Resin 2: Polyimide Resin
(신에츠사 분자량 : 30,000 유리전이온도 75℃)(Shin-Etsu Corporation molecular weight: 30,000 glass transition temperature 75 ℃)
가소성수지3 : 폴리에스테르수지Plastic Resin 3: Polyester Resin
(에스케이씨 ES-360, 유리전이온도 : 17℃ 수평균분자량:28,000) (ESCEI ES-360, glass transition temperature: 17 ℃, number average molecular weight: 28,000)
가소성수지4 : 폴리에스테르수지 Plastic Resin 4: Polyester Resin
(에스케이씨 ES-100, 유리전이온도 : 65℃ 수평균분자량:21,000)(ESCEI ES-100, glass transition temperature: 65 ℃, number average molecular weight: 21,000)
경화촉진제 : 이미다졸 화합물 (시코쿠화성, 큐아졸 2PH)Curing accelerator: imidazole compound (sichokuizable, curazole 2PH)
상기의 과정에서 얻은 점착층 및 접착층을 이용하여 하기의 표2와 같은 조합으로 점착층 및 접착층을 합지한 다이싱-다이본딩용 다층구조의 접착필름을 제조한 후, 각각의 다층필름에 대해서 다음과 같은 물성평가법에 기준하여 평가한 결과, 하기의 표 2에서와 같이 제반 물성면에서 우수한 접착필름을 얻을 수 있음을 확인할 수 있었다.After using the adhesive layer and the adhesive layer obtained in the above process to prepare a multi-layer adhesive film for dicing die-bonding the adhesive layer and the adhesive layer in a combination as shown in Table 2 below, and for each multilayer film As a result of the evaluation based on the property evaluation method as described above, it was confirmed that excellent adhesive films were obtained in terms of physical properties as shown in Table 2 below.
표 2
실시예1 실시예2 실시예3 실시예4 실시예5 비교예1 비교예2 비교예3 비교예4 비교예5 비교예6 비교예7 비교예8
점착제 A1 A1 A1 A1 A3 A2 A1 A1 A1 A1 A1 A1 A1
다이접착필름 B1 B2 B3 B4 B4 B4 B5 B6 B7 B8 B9 B10 B11
특성항목
웨이퍼부착력 250 340 280 230 230 230 450 180 210 150 210 200 215
180°(g/cm) 노광전 110 120 125 110 100 80 150 105 145 100 115 120 110
노광후 11 12 12 10 10 24 23 17 21 8 10 9 11
접착강도(g/cm) 경화전 150 130 150 165 165 165 350 45 160 110 125 90 130
경화후 810 790 820 900 900 900 1100 480 420 1200 850 740 830
내칩핑성 ○ ○ ○ ○ ○ △ X △ △ ○ △ △ △
픽업성 ○ ○ ○ ○ ○ X △ X △ ○ △ ○ ○
기판메음성 ○ ○ ○ ○ ○ ○ ○ X ○ △ ○ △ ○
내열성 흡수전 ○ ○ ○ ○ ○ ○ ○ △ △ △ ○ ○ ○
흡수후 ○ ○ ○ ○ ○ ○ ○ △ X X △ X △
TABLE 2
Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8
adhesive A1 A1 A1 A1 A3 A2 A1 A1 A1 A1 A1 A1 A1
Die Adhesive Film B1 B2 B3 B4 B4 B4 B5 B6 B7 B8 B9 B10 B11
Dimension
Wafer Adhesion 250 340 280 230 230 230 450 180 210 150 210 200 215
180 ° (g / cm) Before exposure 110 120 125 110 100 80 150 105 145 100 115 120 110
After exposure 11 12 12 10 10 24 23 17 21 8 10 9 11
Adhesive strength (g / cm) Before hardening 150 130 150 165 165 165 350 45 160 110 125 90 130
After curing 810 790 820 900 900 900 1100 480 420 1200 850 740 830
Chipping resistance ○ ○ ○ ○ ○ △ X △ △ ○ △ △ △
Pickup ○ ○ ○ ○ ○ X △ X △ ○ △ ○ ○
Substrate ○ ○ ○ ○ ○ ○ ○ X ○ △ ○ △ ○
Heat resistance Absorption ○ ○ ○ ○ ○ ○ ○ △ △ △ ○ ○ ○
After absorption ○ ○ ○ ○ ○ ○ ○ △ X X △ X △
(1) 웨이퍼 부착력 (1) wafer adhesion
다이본딩용 접착제 및 자외선 경화형 점착필름을 합지한 다층필름을 제조(도 1참조)한 후, 이를 다시 60℃의 핫 플레이트 상에 두께가 800㎛인 8인치 실리콘 웨이퍼(디스코 사제 DFG-840 연삭장비로 ＃2300 그라인딩 처리한 웨이퍼)를 올려놓은 다음, 다이본딩용 접착층과 웨이퍼 이면이 밀착되도록 롤라미네이션 장비를 이용하여 롤압력 2000g/cm, 롤이동속도 1 M/분 조건으로 라미네이션을 행하였다. 그 후, 접착필름을 10mm 폭으로 절단한 후, 23℃(실온)에서 30분간 정치 한 후, 23℃의 항온실에서 폴리에스테르필름 기재와 함께 박리각을 180°하여 접착필름을 박리하였을 때 필강도를 측정함으로써 웨이퍼와의 부착력을 측정하였다(접착필름의 인장 속도 300 mm/min).After manufacturing a multilayer film laminated with an adhesive for die-bonding and an ultraviolet curable adhesive film (see FIG. 1), an 8-inch silicon wafer having a thickness of 800 µm on a 60 ° C. hot plate (DFG-840 grinding equipment manufactured by Disco) 2300 grinding wafer), and then lamination was performed under the conditions of roll pressure 2000g / cm and roll moving speed 1M / min using a roll lamination equipment so that the die bonding adhesive layer and the back surface of the wafer were in close contact with each other. Thereafter, the adhesive film was cut to a width of 10 mm, left at 23 ° C. (room temperature) for 30 minutes, and peeled off when the adhesive film was peeled off at a 180 ° peel angle with the polyester film substrate in a constant temperature room at 23 ° C. The adhesive force with the wafer was measured by measuring the strength (the tensile speed of the adhesive film 300 mm / min).
(2) 자외선 조사 전, 후의 벗김 강도(2) Peel strength before and after ultraviolet irradiation
기재필름상에 미리 코팅된 점착제층 위에 다이본딩용 접착제층을 순서적으로 합지(도 1 참조)한 후, 상기 (1)항과 같은 웨이퍼 부착력 측정조건과 동일하게 웨이퍼 이면에 롤라미네이션을 행한 후, 기재필름과 점착필름을 박리시킴으로써 자외선 조사전의 필강도를 측정하고, 또한 기재필름 측면 방향에서 80mJ/cm2 세기의 자외선을 조사한 후, 박리함으로써 자외선 조사 후 필강도 변화를 측정하였다. After laminating an adhesive layer for die bonding on a pressure-sensitive adhesive layer previously coated on a base film (see FIG. 1), and performing a lamination on the back surface of the wafer in the same manner as in the above-described wafer adhesion force measurement conditions (1). Peel strength before ultraviolet irradiation was measured by peeling a base film and an adhesive film, and after irradiating the ultraviolet-ray of 80mJ / cm <2> intensity | strength from the base film side direction, peeling was measured and peeling strength change after ultraviolet irradiation was measured.
(3) 칩 접착강도(3) chip adhesive strength
박리강도 측정을 위하여 고하중하에서도 파손되지 않도록 두께가 800㎛ 인 실리콘웨이퍼 이면에 다이본딩용 접착층이 대면되도록 온도 120℃에서 롤라미네이션 한 후, 다시 보호필름을 제거함으로써 나타나는 다이본딩용 접착층 표면과 1 Oz 동박의 경면을 상호 맞대어 100℃ 조건으로 롤라미네이션 하였다. In order to measure the peel strength, roll lamination is carried out at a temperature of 120 ° C. so that the die bonding adhesive layer faces the back surface of the silicon wafer having a thickness of 800 μm so as not to be damaged under high load. The mirror surfaces of the Oz copper foil were faced to each other and subjected to roll lamination under conditions of 100 ° C.
이 상태로 칩과 동박과의 접착강도를 180° 박리하면서 강도를 측정함으로써 경화 전 접착력을 구하였고, 또한 상기 시편을 175℃ × 2 hr 동안 고온 경화과정을 거친 후, 180°박리강도를 측정하였다. In this state, the adhesive strength was measured by peeling the adhesive strength between the chip and the copper foil by 180 ° to obtain the adhesive strength before curing, and the specimen was subjected to a high temperature curing process for 175 ° C. × 2 hr, and then 180 ° peel strength was measured. .
(4) 내칩핑성(4) chipping resistance
직경 8인치의 실리콘웨이퍼의 이면을 두께 80㎛가 되도록 연마처리한 후 경면처리한 웨이퍼를 이용하였다. 이후 상기 (1)항에서와 같이 다이본딩용 접착층과 60℃ 롤라미네이션을 행하고 9mm × 12 mm 사이즈로 풀 컷팅 다이싱(디스코사제, DFD-651 다이싱장비)을 행하면서 다이싱 시의 칩핑되는 현상 유무를 관측하여 다음과 같은 기준으로 구분하였다.The back surface of the 8-inch-diameter silicon wafer was polished to a thickness of 80 µm, and then a mirror-treated wafer was used. Thereafter, as described in (1), the die bonding adhesive layer is subjected to 60 ° C roll lamination and chipping at the time of dicing while performing full cutting dicing (manufactured by Disco, DFD-651 dicing equipment) in a size of 9 mm × 12 mm. The phenomenon was observed and classified into the following criteria.
○ : 칩 가장자리에서 30㎛ 이하 크기로 칩 파편발생○: Chip fragments are generated at the size of 30㎛ or less at the chip edge
△ : 칩 가장자리에 30~60㎛ 이내의 크기로 칩 파편발생△: Chip fragments occur within 30 ~ 60㎛ at chip edge
X : 칩 가장자리에 60㎛ 이상의 크기로 칩 파편발생 X: Chip fragments over 60㎛ size at chip edge
(5) 픽업성(5) pickup
직경 8인치의 실리콘웨이퍼의 이면을 두께 100㎛가 되도록 연마처리한 후 경면 처리한 웨이퍼를 이용하였다. 이후 상기 (1)항에서와 같이 다이본딩용 접착층과 60℃ 롤라미네이션을 행하고 9mm × 12mm 사이즈로 풀 컷팅 다이싱(디스코사제, DFD-651 다이싱장비)을 행하였다. 상기와 같이 준비된 샘플을 다이본딩머신을 이용하여 픽업 진행하고 다음과 같은 기준에 의거하여 분류한다.The back surface of the 8-inch diameter silicon wafer was polished to a thickness of 100 μm, and then a mirror-treated wafer was used. Thereafter, as described in (1), the die bonding adhesive layer was subjected to lamination at 60 ° C., and full-cut dicing (Disco Co., Ltd., DFD-651 dicing equipment) was performed at a size of 9 mm × 12 mm. The sample prepared as above is picked up using a die-bonding machine and classified based on the following criteria.
○ : 100% 픽업 가능하며 재시도 횟수가 20% 이하○: 100% can be picked up and retry is less than 20%
△ : 90~100% 픽업 가능하며 재시도 횟수가 20% 이상△: 90-100% can be picked up and 20% or more retries
X : 픽업성 90% 이하X: Pickup 90% or less
(6) 기판메움성(6) substrate filling property
다이본딩용 접착필름(20um)에 10mm×10mm로 절단한 커버글라스(130㎛)를 라미네이터를 이용하여 60℃로 라미네이션하였다. 상기와 같이 준비된 샘플을 PCB 상에 다이본딩머신을 이용하여 120℃에서 1.0kgf의 압력으로 1.0초간 압착하였다. The cover glass (130 μm) cut into 10 mm × 10 mm in the die-bonding adhesive film (20 um) was laminated at 60 ° C. using a laminator. The sample prepared as described above was pressed for 1.0 second at a pressure of 1.0 kgf at 120 ° C. using a die bonding machine on a PCB.
이후 현미경을 이용하여 PCB 회로 패턴 사이로 흘러들어간 양을 계산하여 메움성을 확인하고 다음과 같은 기준에 의거하여 분류한다.After that, the amount of flow between the PCB circuit patterns is calculated using a microscope to check the filling property and to classify it based on the following criteria.
○ : 회로 패턴 메움성 60% 이상○: 60% or more of circuit pattern filling
△ : 회로 패턴 메움성 20~60%△: 20 ~ 60% of circuit pattern filling
× : 회로 패턴 메움성 20% 이하×: 20% or less of circuit pattern filling
(7) 내열성(7) heat resistance
반도체 패키지내에서의 다이본딩용 접착필름의 흡습에 따른 내열내습성을 평가하기 위하여 상기(3)항과 같이 칩과 동박과의 경화시편을 제작한 것을 260℃ 납조에 30초간 침적시킨 후, 현미경 관찰을 통하여 기포생성 여부를 확인하였다. 또한 상기 경화시편을 85℃/85% RH 하에서 48시간 동안 방치하여 흡습 처리한 후 다시 260℃ 납조에 30초간 침적시킴으로써 흡습 후 내열성을 평가하였다.In order to evaluate the heat and moisture resistance according to the moisture absorption of the die-bonding adhesive film in the semiconductor package, a hardened specimen of the chip and the copper foil was deposited as described in the above (3) for 30 seconds in a 260 ° C lead bath, followed by a microscope Observation confirmed the formation of bubbles. In addition, the cured specimen was left to stand at 85 ° C./85% RH for 48 hours to absorb moisture, and then immersed in a 260 ° C. bath for 30 seconds to evaluate heat resistance after absorption.
내열성평가 기준은 다음과 같다.The heat resistance evaluation criteria are as follows.
○ : 기포생성 또는 계면박리 면적이 칩 면적의 5% 이하○: Bubble generation or interfacial peeling area is 5% or less of chip area
△ : 기포생성 또는 계면박리 면적이 칩 면적의 5~30% 이내△: bubble generation or interfacial peeling area within 5-30% of chip area
× : 기포생성 또는 계면박리 면적이 칩 면적의 30% 이상X: Bubble generation or interface peeling area is 30% or more of the chip area
상기 [표 2]의 비교예 2 내지 비교예 8을 참조하면, 다이본딩용 접착층에서 무기입자가 빠짐으로 해서 다이싱 시 칩핑 현상이 일어나며 흡습 이후 내열성 측면에서도 문제점을 보이고 있다.Referring to Comparative Examples 2 to 8 of [Table 2], the chipping phenomenon occurs when dicing due to the missing inorganic particles in the adhesive layer for die bonding, and also shows a problem in terms of heat resistance after moisture absorption.
그리고, 상기 [표 2]를 참조하면 본 발명에 포함되는 연화점 120℃ 이상의 페놀 수지를 사용하여 제조된 실시 예 1 내지 실시 예 5의 접착필름이 접착강도와 내칩핑성, 기판 메움성 및 흡습 전후의 내열성에 있어 우수한 결과를 확인할 수 있었다. 반면에 다른 형태의 페놀 수지나 연화점이 120℃ 이하의 페놀 수지를 사용한 비교예 6 내지 비교예 8은 종류에 따라 약간의 차이가 있었으나 내칩핑성, 픽업성, 기판메움성에서 문제가 있었고 흡습 후의 낮은 내열성으로 인해 신뢰성에 문제가 있음을 확인할 수 있었다.In addition, referring to [Table 2], the adhesive films of Examples 1 to 5 prepared using a phenol resin having a softening point of 120 ° C. or higher included in the present invention may have adhesive strength, chipping resistance, substrate filling, and moisture absorption before and after. It was confirmed that excellent results in the heat resistance of the. On the other hand, Comparative Examples 6 to 8 using other types of phenol resins or softening points of 120 ° C. or less had slight differences depending on the type, but had problems in chipping resistance, pick-up properties, and substrate filling properties. It was confirmed that there is a problem in reliability due to low heat resistance.

Claims (12)

  1. 기재층, 점착층 및 접착층을 포함하는 반도체 패키지용 접착필름에 있어서,In the adhesive film for a semiconductor package comprising a base layer, an adhesive layer and an adhesive layer,
    상기 접착층은,The adhesive layer,
    a) 열가소성 수지;a) thermoplastic resin;
    b) 연화점이 30~100℃인 에폭시 수지 및 연화점이 120℃이상인 경화제를 포함하는 열경화성 수지;b) a thermosetting resin comprising an epoxy resin having a softening point of 30 to 100 ° C. and a curing agent having a softening point of at least 120 ° C .;
    를 포함하는 조성물인 것을 특징으로 하는 반도체 패키지용 접착필름. Adhesive film for a semiconductor package, characterized in that the composition comprising a.
  2. 제 1항에 있어서,The method of claim 1,
    상기 경화제는 페놀수지로서, 하기 화학식 1로 표시되는 것을 특징으로 하는 반도체 패키지용 접착필름.The curing agent is a phenol resin, the adhesive film for a semiconductor package, characterized in that represented by the formula (1).
    [화학식 1][Formula 1]
    Figure PCTKR2012001359-appb-I000003
    Figure PCTKR2012001359-appb-I000003
    (상기 식에서, R1은 각각 동일하거나 상이할 수 있으며 수소원자, 탄소수 1 내지 10의 직쇄 또는 분자쇄 알킬기, 환상 알킬기, 수산기 또는 아릴기를 나타내고 R2는 페놀, 크레졸 또는 아미노트리아진을 나타내고 n은 1 내지 3의 정수를 나타낸다.)Wherein each R 1 may be the same or different and represents a hydrogen atom, a straight or molecular chain alkyl group having 1 to 10 carbon atoms, a cyclic alkyl group, a hydroxyl group or an aryl group, and R 2 represents a phenol, cresol or aminotriazine and n is It represents the integer of 1-3.)
  3. 제 2항에 있어서,The method of claim 2,
    상기 페놀수지의 수산기 당량은 100~300g/eq인 것을 특징으로 하는 반도체 패키지용 접착필름.The hydroxyl group equivalent of the phenol resin is 100 ~ 300g / eq adhesive film for a semiconductor package.
  4. 제 1항에 있어서,The method of claim 1,
    상기 에폭시 수지는 접착층 조성물 전체 100중량부 대비 10~60중량부 포함되는 것을 특징으로 하는 반도체 패키지용 접착필름.The epoxy resin is an adhesive film for a semiconductor package, characterized in that 10 to 60 parts by weight based on 100 parts by weight of the total adhesive layer composition.
  5. 제 1항에 있어서,The method of claim 1,
    상기 경화제는 접착층 조성물 전체 100중량부 대비 5~20중량부 포함되는 것을 특징으로 하는 반도체 패키지용 접착필름.The curing agent is an adhesive film for a semiconductor package, characterized in that 5 to 20 parts by weight based on 100 parts by weight of the total adhesive layer composition.
  6. 제 1항에 있어서,The method of claim 1,
    상기 열가소성 수지는 아크릴산 공중합체, 폴리에스테르수지, 폴리이미드수지, 폴리에스테르이미드, 폴리에테르이미드, 페녹시, 부타디엔아크릴로 니트릴 공중합 고무로 이루어진 군에서 선택되는 1종 이상을 포함하는 것을 특징으로 하는 반도체 패키지용 접착필름.The thermoplastic resin is a semiconductor, characterized in that it comprises at least one member selected from the group consisting of acrylic acid copolymer, polyester resin, polyimide resin, polyesterimide, polyetherimide, phenoxy, butadiene acrylonitrile copolymer rubber Adhesive film for packaging.
  7. 제 6항에 있어서,The method of claim 6,
    상기 아크릴산 공중합체는 히드록시기, 카르복실기 또는 글리시딜기로 이루어진 군으로부터 선택된 1종 이상의 관능기를 포함하는 것을 특징으로 하는 반도체 패키지용 접착필름.The acrylic acid copolymer is an adhesive film for a semiconductor package, characterized in that it comprises at least one functional group selected from the group consisting of hydroxy group, carboxyl group or glycidyl group.
  8. 제 1항에 있어서,The method of claim 1,
    상기 열가소성 수지는 접착층 조성물 전체 100중량부 대비 20~80중량부, 포함되는 것을 특징으로 하는 반도체 패키지용 접착필름.The thermoplastic resin is 20 to 80 parts by weight, based on 100 parts by weight of the total adhesive layer composition, the adhesive film for a semiconductor package.
  9. 제 1항에 있어서,The method of claim 1,
    상기 접착층 조성물은 경화촉진제를 더 포함하는 것을 특징으로 하는 반도체 패키지용 접착필름.The adhesive layer composition is an adhesive film for a semiconductor package, characterized in that it further comprises a curing accelerator.
  10. 제 9항에 있어서,The method of claim 9,
    상기 경화촉진제는 열경화성 수지 100중량부에 대비 0.1~10중량부인 것을 특징으로 하는 반도체 패키지용 접착필름.The curing accelerator is an adhesive film for a semiconductor package, characterized in that 0.1 to 10 parts by weight relative to 100 parts by weight of the thermosetting resin.
  11. 제 1항에 있어서,The method of claim 1,
    상기 점착층은 점착층 조성물 전체 100중량부 대비 50~80중량부의 아크릴 공중합체, 10~30중량부의 광경화성 올리고머 및 1~5중량부의 열경화제를 포함하는 것을 특징으로 하는 반도체 패키지용 접착필름.The adhesive layer is an adhesive film for a semiconductor package, comprising 50 to 80 parts by weight of an acrylic copolymer, 10 to 30 parts by weight of a photocurable oligomer, and 1 to 5 parts by weight of a thermosetting agent, based on 100 parts by weight of the entire adhesive layer composition.
  12. 제 1항에 있어서,The method of claim 1,
    상기 기재층은 폴리에틸렌, 폴리프로필렌, 폴리에틸렌테레프탈레이트, 폴리우레탄, 에틸렌-프로필렌 공중합체, 에틸렌-아크릴산에틸 공중합체, 에틸렌-아크릴산메틸 공중합체 중 선택되는 1종 이상을 포함하는 것을 특징으로 하는 반도체 패키지용 접착필름.The base layer is a semiconductor package comprising at least one selected from polyethylene, polypropylene, polyethylene terephthalate, polyurethane, ethylene-propylene copolymer, ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer Adhesive film.
PCT/KR2012/001359 2011-06-14 2012-02-22 Adhesive film for a semiconductor package WO2012173325A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0057323 2011-06-14
KR1020110057323A KR101089631B1 (en) 2011-06-14 2011-06-14 Multilayer adhesive film for semiconductor package

Publications (1)

Publication Number Publication Date
WO2012173325A1 true WO2012173325A1 (en) 2012-12-20

Family

ID=45505596

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/001359 WO2012173325A1 (en) 2011-06-14 2012-02-22 Adhesive film for a semiconductor package

Country Status (2)

Country Link
KR (1) KR101089631B1 (en)
WO (1) WO2012173325A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015102342A1 (en) * 2014-01-03 2015-07-09 주식회사 엘지화학 Dicing film and dicing die bonding film
CN105264033A (en) * 2014-01-03 2016-01-20 株式会社Lg化学 Dicing film and dicing die bonding film
US9953945B2 (en) 2014-11-17 2018-04-24 Lg Chem, Ltd. Adhesive resin compostition for bonding semiconductors and adhesive film for semiconductors
US10759971B2 (en) 2015-04-29 2020-09-01 Lg Chem, Ltd. Adhesive composition for semiconductor, adhesive film for semiconductor, and dicing die bonding film
CN112424307A (en) * 2019-05-10 2021-02-26 株式会社Lg化学 Adhesive composition for semiconductor circuit connection, adhesive film for semiconductor using the same, method for manufacturing semiconductor package, and semiconductor package

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5872068B2 (en) 2012-01-06 2016-03-01 エルジー・ケム・リミテッド Sealing film
KR101248008B1 (en) * 2012-05-02 2013-03-27 주식회사 이녹스 Adhesive film composition for semiconductor package
WO2015088282A1 (en) * 2013-12-13 2015-06-18 주식회사 엘지화학 Composition for forming adhesive layer of dicing film, and dicing film
KR101730054B1 (en) 2013-12-13 2017-04-25 주식회사 엘지화학 Dicing film adhesion layer composition and dicing film
KR102101056B1 (en) * 2016-06-16 2020-04-14 주식회사 엘지화학 Heating element and method for fabricating the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059787A (en) * 2005-08-26 2007-03-08 Sumitomo Bakelite Co Ltd Adhesive film for semiconductor and semiconductor device using it
KR100894173B1 (en) * 2008-03-31 2009-04-22 주식회사 이녹스 Mulitlayer adhesive film for semiconductor package
KR20090111260A (en) * 2008-04-21 2009-10-26 주식회사 엘지화학 Adhesive compositons, adhesive films, dicing die bonding films, semiconductor wafers and semiconductor devices comprising the same
KR20090121254A (en) * 2008-05-20 2009-11-25 주식회사 엘지화학 Pressure-sensitive adhesive film, dicing die bonding film and semiconductor wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059787A (en) * 2005-08-26 2007-03-08 Sumitomo Bakelite Co Ltd Adhesive film for semiconductor and semiconductor device using it
KR100894173B1 (en) * 2008-03-31 2009-04-22 주식회사 이녹스 Mulitlayer adhesive film for semiconductor package
KR20090111260A (en) * 2008-04-21 2009-10-26 주식회사 엘지화학 Adhesive compositons, adhesive films, dicing die bonding films, semiconductor wafers and semiconductor devices comprising the same
KR20090121254A (en) * 2008-05-20 2009-11-25 주식회사 엘지화학 Pressure-sensitive adhesive film, dicing die bonding film and semiconductor wafer

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015102342A1 (en) * 2014-01-03 2015-07-09 주식회사 엘지화학 Dicing film and dicing die bonding film
CN105264033A (en) * 2014-01-03 2016-01-20 株式会社Lg化学 Dicing film and dicing die bonding film
US9761476B2 (en) 2014-01-03 2017-09-12 Lg Chem, Ltd. Dicing film and dicing die-bonding film
CN105264033B (en) * 2014-01-03 2018-05-18 株式会社Lg化学 Cutting film and cut crystal bonding film
US9953945B2 (en) 2014-11-17 2018-04-24 Lg Chem, Ltd. Adhesive resin compostition for bonding semiconductors and adhesive film for semiconductors
US10759971B2 (en) 2015-04-29 2020-09-01 Lg Chem, Ltd. Adhesive composition for semiconductor, adhesive film for semiconductor, and dicing die bonding film
US10865329B2 (en) 2015-04-29 2020-12-15 Lg Chem, Ltd. Adhesive film for semiconductor
CN112424307A (en) * 2019-05-10 2021-02-26 株式会社Lg化学 Adhesive composition for semiconductor circuit connection, adhesive film for semiconductor using the same, method for manufacturing semiconductor package, and semiconductor package
CN112424307B (en) * 2019-05-10 2022-11-15 株式会社Lg化学 Adhesive composition for semiconductor circuit connection, adhesive film for semiconductor using the same, method for manufacturing semiconductor package, and semiconductor package

Also Published As

Publication number Publication date
KR101089631B1 (en) 2011-12-06

Similar Documents

Publication Publication Date Title
WO2012173325A1 (en) Adhesive film for a semiconductor package
TWI641481B (en) Resin film forming composite sheet
KR100894173B1 (en) Mulitlayer adhesive film for semiconductor package
KR102007111B1 (en) Semiconductor processing tape
JP5505421B2 (en) Method for manufacturing film adhesive, adhesive sheet, semiconductor device, and method for manufacturing the same
KR101492629B1 (en) Adhesive composition, adhesive sheet and production process for semiconductor device
WO2009113831A2 (en) Multi-functional tape for semiconductor package and a method for manufacturing semiconductor device using the same
KR101847526B1 (en) Adhensive composition for semiconductor, Adhensive sheet for semiconductor and Manufacturing method of Semiconductor Device
WO2011046238A1 (en) Die attach film
KR101209552B1 (en) Adhesive composition for masking tape for mold underfill process and masking tape using the same
JP2008247936A (en) Sticky adhesive composition, sticky adhesive sheet and method for producing semiconductor device
JP5005258B2 (en) Adhesive composition, adhesive sheet and method for producing semiconductor device
KR20120061755A (en) Wafer mold material and method for manufacturing semiconductor device
KR100669134B1 (en) Multilayer adhesive film for semiconductor package
KR20130105434A (en) Adhesive composition, adhesive sheet and method for manufacturing semiconductor device
JPWO2018105613A1 (en) Semiconductor processing tape
KR101752992B1 (en) Adhesive agent composition, adhesive sheet, and method for manufacturing semiconductor device
JP2010278297A (en) Adhesive tape for fixing semiconductor and method of manufacturing the same
KR20190113746A (en) Semiconductor Processing Tape
KR101248008B1 (en) Adhesive film composition for semiconductor package
JP2008133331A (en) Visco-adhesive composition, visco-adhesive sheet and method for producing semiconductor device
KR100860098B1 (en) Adhesive film for semiconductor package
TW201505832A (en) Composite sheet for protective film formation, method for producing composite sheet for protective film formation, and method for producing chip with protective film
KR101103406B1 (en) High-temperature adhesive tape for semiconductor package
WO2013094998A1 (en) Adhesive composition for semiconductor, and adhesive film comprising same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12801376

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12801376

Country of ref document: EP

Kind code of ref document: A1