WO2012171721A1 - Composant semi-conducteur optoélectronique et utilisation d'un tel composant semi-conducteur - Google Patents

Composant semi-conducteur optoélectronique et utilisation d'un tel composant semi-conducteur Download PDF

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Publication number
WO2012171721A1
WO2012171721A1 PCT/EP2012/058392 EP2012058392W WO2012171721A1 WO 2012171721 A1 WO2012171721 A1 WO 2012171721A1 EP 2012058392 W EP2012058392 W EP 2012058392W WO 2012171721 A1 WO2012171721 A1 WO 2012171721A1
Authority
WO
WIPO (PCT)
Prior art keywords
converter
radiation
semiconductor
semiconductor chip
wavelength range
Prior art date
Application number
PCT/EP2012/058392
Other languages
German (de)
English (en)
Inventor
Hailing Cui
Ion Stoll
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2012171721A1 publication Critical patent/WO2012171721A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to an optoelectronic component comprising a first semiconductor chip and a second semiconductor chip. Furthermore, the present invention relates to a
  • LEDs are often used, which are downstream in the emission LCD filters. There are different requirements for the LEDs. On the one hand, a maximum brightness of the LEDs and, on the other hand, a large color gamut are expected.
  • the conventional LCD filter systems downstream of the LEDs usually have three color filters (blue, green and red) or four color filters (blue, green, yellow and red).
  • the LCD color filters have a FWHM (fill width half maximum) in the range of
  • a blue LED whose light is partially converted into green light by means of a converter.
  • a red LED is used so that white light can be generated.
  • a UV-emitting LED whose light is converted into blue, green and red light.
  • a blue LED which are followed by two different converters, so that of the LED
  • emitted blue radiation can be converted into green and red components of the light.
  • LED chips with downstream converter disadvantageously have a broadband emission spectrum, so that in this case a considerable amount of light of the LEDs of the
  • the emission spectrum of the device is matched to LCD filter, so that
  • Optoelectronic semiconductor device a carrier substrate, a arranged on the carrier substrate first
  • the first semiconductor chip has an active layer suitable for generating radiation, which is suitable for emitting radiation in the UV wavelength range.
  • the second semiconductor chip has a to
  • the first semiconductor chip is followed by a first converter in the emission direction, which is suitable
  • Semiconductor chip is downstream of a second converter in the radiation, which is suitable radiation in the blue
  • Wavelength range in radiation in the red wavelength range to convert The radiation of the UV-emitting semiconductor chip is thus converted with a converter into green radiation.
  • a converter is selected which has a very narrow-band emission.
  • the blue radiation of the second semiconductor chip is proportionally converted by a converter into red radiation.
  • Converting radiation advantageously has low quenching (radiationless deactivation) at high levels
  • a UV-green converter has a smaller Stokes shift compared to UV-red converters. Furthermore, by using a narrow-band converter with advantage a very high
  • Farbgamut be achieved.
  • a reabsorption of the green light can be avoided by the red converter.
  • the semiconductor device is an optoelectronic
  • the semiconductor device has two optoelectronic
  • the semiconductor chips are preferably LEDs, particularly preferred thin-film LEDs.
  • a growth substrate on which layers of the semiconductor chip have been epitaxially grown has been partially or completely detached.
  • the semiconductor chips each have one
  • the active layer preferably contains a pn junction, a double heterostructure, a
  • Single quantum well structure SQW, Single quantum well
  • MQW multiple quantum well structure
  • Dimensionality of quantization includes, among other things, quantum wells, quantum wires and quantum dots, and each one
  • the semiconductor layer stack of the semiconductor chips each preferably contains an I I I / V semiconductor material.
  • III / V semiconductor materials are used for radiation generation in the
  • ultraviolet particularly suitable over the visible to the infrared spectral range.
  • the second converter converts a portion of the radiation emitted by the second semiconductor chip into radiation in the red
  • Wavelength range wherein the second converter also transmits a portion of the radiation emitted by the second semiconductor chip unconverted.
  • transmitting unconverted means that the radiation emitted by the second semiconductor chip does not exist
  • Influencing through the second converter passes, so that this portion of the radiation leaves the second converter as blue radiation.
  • the second converter is thus not suitable for complete conversion, but converts only part of that of the second
  • the first converter completely converts the radiation emitted by the first semiconductor chip into radiation in the green
  • the first converter is therefore suitable for full conversion.
  • the from the first converter is therefore suitable for full conversion.
  • Semiconductor chip emitted radiation from the first converter is converted into green radiation.
  • Narrow-band emission which is particularly advantageous for backlighting.
  • the first converter is a BaMgAl] _QOl7: Eu2 +, Mn ⁇ + based converter.
  • the radiation emitted by the first semiconductor chip completely turns into green radiation with such a converter
  • Half width has.
  • a semiconductor chip with such a downstream converter is suitable for the backlighting of LCD filter systems due to its narrow-band emission.
  • Converter (SR, Ca) AIS1N3: Eu ⁇ " based converter or
  • Converter plates have, for example, a matrix material with converter particles embedded therein.
  • a matrix material with converter particles embedded therein.
  • the first converter and / or the second converter are designed as volume encapsulation.
  • the semiconductor chip is preferably completely encased with a potting compound, the embedded one
  • the volume casting is included in particular a radiation exit side of the
  • the first semiconductor chip for example, a downstream converter plate and the second semiconductor chip, for example, an enveloping
  • Sedimentation layer formed a thin layer of converter particles which are not contained in a matrix material is applied directly to the semiconductor chip.
  • the converter particles are thus present on the chip surface as a pure form.
  • Semiconductor component further comprises a housing having at least one cavity in which the semiconductor chips are arranged.
  • the semiconductor component is thus formed in this case as an LED package.
  • each semiconductor chip in the housing is associated with a cavity, thus each semiconductor chip is arranged in a separate cavity of the housing. According to at least one embodiment, the
  • Semiconductor component further comprises an optical element, which is arranged downstream of the semiconductor chips in the emission direction.
  • the semiconductor device does not necessarily have to have a housing.
  • the semiconductor chips may in this case be mounted, for example, on a planar printed circuit board.
  • Spectral components of the converted and unconverted radiations are mixed so that white light is produced with advantage.
  • the optical detector According to at least one embodiment, the optical detector
  • This light guide is preferably suitable for the backlighting of televisions and computer monitors or other screens.
  • the light guide is designed such that a homogeneous
  • Radiation characteristic is achieved from the light guide.
  • Semiconductor devices used to backlight a screen for example, the emitted from the individual semiconductor devices radiations are coupled into a common light guide.
  • Figures 1 to 4 are each a schematic cross section of a
  • Figure 5 is a diagram showing the transmission of LCD color filters and the emission spectrum of a
  • Figure 6 is a diagram showing the transmission of LCD color filters and the emission spectrum of a
  • Components such as layers, structures,
  • FIG. 6 shows a diagram in which the transmission T is plotted against the wavelength ⁇ .
  • transmission curves of conventional LCD color filters are plotted against the wavelength ⁇ .
  • the emission spectrum is 7 of a conventional device conventionally used for backlighting the color filters.
  • the transmission spectrum 6a shows the transmittance depending on the wavelength of a blue color filter
  • the transmission spectrum 6b shows the transmittance depending on the wavelength of a green color filter
  • Transmission spectrum 6c the transmittance of a red color filter.
  • the LCD color filters 6a, 6b and 6c each have a FWHM (fill width half maximum) in the range of between 70 nm and 120 nm.
  • FWHM fill width half maximum
  • broadband emission spectrum 7 of the semiconductor device which backlit the color filters, a proportion of the emitted radiation is absorbed by the color filters.
  • Emission maxima of the emission spectrum 7 is not complete with the transmission maxima of the transmission spectra 6a, 6b, 6c of the color filter.
  • the emission spectrum 7 has a clearly broad peak in the green wavelength range, which peaks on the transmission spectrum 6b of the green
  • Color filter is not optimally matched. Due to the non - optimal tuning of the emission spectrum of the Radiation emitting device on the
  • Transmission spectrum of the LCD filter system can not adversely affect the maximum amount of light from the device
  • the conventional components usually have three
  • a blue LED chip is used whose light is converted by means of a converter partly in green light.
  • a red semiconductor chip is additionally used.
  • a UV-emitting semiconductor chip is used, the light is converted into blue, green and red light.
  • a blue semiconductor chip is used, the two different converters are arranged downstream, wherein one of the converters the blue light in green and also in red
  • a component is now provided according to the invention, which has a first semiconductor chip and a second semiconductor chip, each having a Converter is downstream.
  • Such semiconductor components are shown in connection with FIGS. 1 to 5.
  • FIG. 5 shows a diagram in which the transmission T is plotted against the wavelength ⁇ .
  • the diagram are transmission curves of conventional LCD color filters
  • the emission spectrum 7 according to the invention of FIG. 5 shows a significantly lower peak in the green wavelength range compared to the conventional emission spectrum of FIG.
  • Transmission spectrum of the LCD filter system especially in the green spectral range can advantageously a larger
  • Housing 4 is enclosed.
  • the housing 4 has a cavity in which the first semiconductor chip la and the second Semiconductor chip lb are arranged.
  • the semiconductor chips 1a, 1b are mounted directly on the carrier substrate 2 on a bottom surface of the cavity of the housing 4.
  • the carrier substrate 2 is, for example, a printed circuit board, preferably a PCB.
  • the cavity walls of the housing 4 are preferably formed obliquely, so that the radiation emitted by the semiconductor chips 1a, 1b radiation is reflected at these Kavticiansstenn in the direction of the coupling-out side of the device.
  • the first semiconductor chip la has a to
  • Radiation generation suitable active layer IIa which is suitable for radiation in the UV wavelength range
  • the second semiconductor chip 1b has a to
  • Radiation generation suitable layer IIb which is suitable to emit radiation in the blue wavelength range.
  • the semiconductor chips 1a, 1b each have one
  • the active layer IIa, IIb is in each case integrated in the semiconductor layer sequence.
  • the first semiconductor chip la is followed by a first converter 3a in the emission direction, which is suitable for radiation in the UV wavelength range in radiation in the green
  • the first converter 3a is designed as a converter plate and is arranged directly on a radiation coupling-out side of the first semiconductor chip 1a. This is for example the
  • Converter plate 3a separately prepared and transferred by means of a layer transfer to the first semiconductor chip la and fixed there.
  • the first converter 3a converts prefers the radiation emitted by the first semiconductor chip la radiation completely in radiation in the green
  • Wavelength range This means that at least 90%, preferably at least 95% of the radiation emitted in the active layer IIa of the first semiconductor chip 1a, which passes through the first converter 3a, is converted there into green radiation. In the first converter 3a thus a full conversion of the of the first semiconductor chip la
  • the first converter 3a is preferably a
  • the first one is
  • Converter 3a a BaMgAl] _QOl7: Eu2 +, Mn ⁇ + based converter.
  • a second converter 3b is correspondingly arranged and arranged downstream of the semiconductor chip in the emission direction, which is also referred to as
  • the second converter 3b converts part of the radiation emitted by the second semiconductor chip 1b into radiation in the red
  • Converter 3b takes place, so that from the second converter 3b passing beams comprise both a red portion and a blue portion. For example, about 50% of the radiation emitted by the active layer IIb of the second semiconductor chip 1b is converted into red radiation in the second converter 3b and about 50% is unconverted
  • the second converter 3b is, for example, a (Sr, Ca) AIS1N3: Eu ⁇ + or a (Ca, Ba, Sr) 2S15N8: Eu ⁇ + based converter.
  • the semiconductor component of FIG. 1 emits a total of blue radiation which is emitted by the second semiconductor chip 1b and transmitted unconverted, red
  • the green light which is emitted by the first converter 3a, is very narrow band and has a FWHM of about 27 nm.
  • the peak wavelength of the green light is about 517 nm and is optimally in the maximum of
  • FIG. 2 shows an alternative embodiment, wherein, in contrast to the semiconductor component of FIG.
  • the semiconductor device of Figure 2 comprises no housing.
  • the first converter 3a and the second converter 3b are not formed as a converter plate, but as Volumenverguss. The Volumenverguss wrapped and encloses each case the respective
  • volume Verguss the radiation exit side of the respective semiconductor chip la, lb downstream, so that the radiation emitted by the active layers IIa, IIb radiation passes through the Volumenverguss and is partially or completely converted there in the Volumenverguss.
  • the embodiment of Figure 2 is consistent with the embodiment of Figure 1.
  • the embodiment of Figure 3 differs from the embodiment of Figure 2 in that the first converter 3a and the second converter 3b as
  • Sedimentation layer is in each case directly on the
  • converter particles of the embodiment of Figure 3 are in particular in pure form.
  • the sedimentation layer of the first converter 3a and the second converter 3b can, for example, by means of
  • Electrophoresis on the semiconductor chips la, lb be applied.
  • FIG. 4 shows a further exemplary embodiment of a
  • the optical element 5 is, for example, a light guide.
  • the emitted from the semiconductor chips and the converted beams are coupled into the common light guide 5, wherein in the light guide 5, the spectral components of the radiations are mixed.
  • the green radiation converted by the UV semiconductor chip 1a from the first converter 3a couples the blue radiation emitted by the second semiconductor chip 1b and that of the second
  • Converter 3b converted red radiation together into the light guide 5 and are preferably mixed homogeneously there.
  • Such coupled into a light guide beams can for backlighting example of televisions and
  • Computer monitors are used.
  • the semiconductor device of Figure 4 which is upstream of the light guide 5, for example, as one of
  • the number of Hableiterbaurase or Hableiterchips is not limited to the number shown in Figure 4. In particular, more than two semiconductor chips can the
  • a plurality of semiconductor components according to the invention are arranged next to one another on the carrier substrate, so that the radiation emitted by the plurality of semiconductor components is coupled together into the optical waveguide.
  • the invention is not limited by the description based on the embodiments of these, but includes each new feature and any combination of features, which in particular any combination of features in the

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Liquid Crystal (AREA)

Abstract

L'invention concerne un composant semi-conducteur qui comprend un substrat support (2), une première puce de semi-conducteur (1a) et une deuxième puce de semi-conducteur (1b). La première puce de semi-conducteur (1a) est adaptée pour émettre un rayonnement dans la plage de longueurs d'onde des UV. La deuxième puce de semi-conducteur (1b) est adaptée pour émettre un rayonnement dans la plage de longueurs d'onde du bleu. La première puce de semi-conducteur (1a) est suivie d'un premier convertisseur (3a) qui est adapté pour convertir le rayonnement UV en rayonnement vert. La deuxième puce de semi-conducteur (1b) est suivie d'un deuxième convertisseur (3b) qui est adapté pour convertir le rayonnement bleu en rayonnement rouge. L'invention concerne en outre une utilisation d'un tel composant.
PCT/EP2012/058392 2011-06-16 2012-05-07 Composant semi-conducteur optoélectronique et utilisation d'un tel composant semi-conducteur WO2012171721A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201110104302 DE102011104302A1 (de) 2011-06-16 2011-06-16 Optoelektronisches Halbleiterbauelement und Verwendung eines derartigen Halbleiterbauelements
DE102011104302.4 2011-06-16

Publications (1)

Publication Number Publication Date
WO2012171721A1 true WO2012171721A1 (fr) 2012-12-20

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Application Number Title Priority Date Filing Date
PCT/EP2012/058392 WO2012171721A1 (fr) 2011-06-16 2012-05-07 Composant semi-conducteur optoélectronique et utilisation d'un tel composant semi-conducteur

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DE (1) DE102011104302A1 (fr)
WO (1) WO2012171721A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012109104B4 (de) 2012-09-26 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Beleuchtungseinrichtung, Hinterleuchtung für ein Display oder einen Fernseher und Display oder Fernseher

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217364A1 (en) * 2003-05-01 2004-11-04 Cree Lighting Company, Inc. Multiple component solid state white light
US20060244712A1 (en) * 2005-04-27 2006-11-02 Samsung Electro-Mechanics Co., Ltd. Backlight unit for LCD using LED
EP2163594A2 (fr) * 2008-09-11 2010-03-17 Samsung Electronics Co., Ltd. Module de source lumineuse et appareil d'affichage en disposant
US20100254129A1 (en) * 2006-04-18 2010-10-07 Cree, Inc. Saturated yellow phosphor converted led and blue converted red led

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202005011805U1 (de) * 2005-07-27 2005-10-20 Unity Opto Technology Co., Ltd., San Chung Weiße Leuchtdiode
DE102007042642A1 (de) * 2007-09-07 2009-03-12 Osram Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
TW201003979A (en) * 2008-07-11 2010-01-16 Harvatek Corp Light emitting diode chip packaging structure using sedimentation and manufacturing method thereof
KR101039994B1 (ko) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광소자 및 이를 구비한 라이트 유닛

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217364A1 (en) * 2003-05-01 2004-11-04 Cree Lighting Company, Inc. Multiple component solid state white light
US20060244712A1 (en) * 2005-04-27 2006-11-02 Samsung Electro-Mechanics Co., Ltd. Backlight unit for LCD using LED
US20100254129A1 (en) * 2006-04-18 2010-10-07 Cree, Inc. Saturated yellow phosphor converted led and blue converted red led
EP2163594A2 (fr) * 2008-09-11 2010-03-17 Samsung Electronics Co., Ltd. Module de source lumineuse et appareil d'affichage en disposant

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