WO2012157866A3 - 씨아이지에스 박막 태양전지의 증착 공정 - Google Patents

씨아이지에스 박막 태양전지의 증착 공정 Download PDF

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Publication number
WO2012157866A3
WO2012157866A3 PCT/KR2012/003458 KR2012003458W WO2012157866A3 WO 2012157866 A3 WO2012157866 A3 WO 2012157866A3 KR 2012003458 W KR2012003458 W KR 2012003458W WO 2012157866 A3 WO2012157866 A3 WO 2012157866A3
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WIPO (PCT)
Prior art keywords
layer
forming
solar cell
deposition process
vapor
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PCT/KR2012/003458
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English (en)
French (fr)
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WO2012157866A2 (ko
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박승일
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주식회사 석원
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Publication of WO2012157866A2 publication Critical patent/WO2012157866A2/ko
Publication of WO2012157866A3 publication Critical patent/WO2012157866A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명에 따른 씨아이지에스 박막 태양전지의 증착 공정은 로딩된 기판 상에 몰디브덴(Mo)층을 형성하는 단계, 상기 몰디브덴층의 상부에 CIG 층, 셀레늄(Se) 및 버퍼층을 순차적으로 형성하는 단계, 상기 버퍼층의 상측에 산화아연(ZnO)층을 형성하는 단계 및 상기 산화아연(ZnO)층의 상부에 AZO(Aluminum Zinc Oxide)층을 형성하는 단계를 포함하며, 상기 몰디브덴(Mo)층을 형성하는 단계 내지 상기 AZO층을 형성하는 단계는 진공펌프를 포함하는 공정 챔버에 의해 진공상태에서 수행되는 것을 기술적 특징으로 하며, CIGS 태양전지의 셀 및 모듈 공정을 진공 상태에서 인라인 공정을 수행하여, 증착 공정을 단순화하는 것을 기술적 목적으로 한다.
PCT/KR2012/003458 2011-05-16 2012-05-03 씨아이지에스 박막 태양전지의 증착 공정 WO2012157866A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0045872 2011-05-16
KR1020110045872A KR101234056B1 (ko) 2011-05-16 2011-05-16 씨아이지에스 박막 태양전지의 증착 공정

Publications (2)

Publication Number Publication Date
WO2012157866A2 WO2012157866A2 (ko) 2012-11-22
WO2012157866A3 true WO2012157866A3 (ko) 2013-01-10

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PCT/KR2012/003458 WO2012157866A2 (ko) 2011-05-16 2012-05-03 씨아이지에스 박막 태양전지의 증착 공정

Country Status (2)

Country Link
KR (1) KR101234056B1 (ko)
WO (1) WO2012157866A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101640516B1 (ko) 2015-06-25 2016-07-19 (주)크린플로 태양광 유리 패널 제조용 상·하판유리 접합 방법 및 이에 의해 제조된 태양광 유리 패널
KR101951019B1 (ko) * 2018-03-23 2019-02-21 영남대학교 산학협력단 Cigs 박막 태양전지 및 이의 제조방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100025068A (ko) * 2008-08-27 2010-03-09 부산대학교 산학협력단 ＺｎＯ 나노막대를 이용한 화합물 태양전지의 제조방법 및 이에 의한 화합물 태양전지
US20100132780A1 (en) * 2008-10-23 2010-06-03 Kizilyalli Isik C Photovoltaic device
KR20110001813A (ko) * 2009-06-30 2011-01-06 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR20110037637A (ko) * 2009-10-07 2011-04-13 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100025068A (ko) * 2008-08-27 2010-03-09 부산대학교 산학협력단 ＺｎＯ 나노막대를 이용한 화합물 태양전지의 제조방법 및 이에 의한 화합물 태양전지
US20100132780A1 (en) * 2008-10-23 2010-06-03 Kizilyalli Isik C Photovoltaic device
KR20110001813A (ko) * 2009-06-30 2011-01-06 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR20110037637A (ko) * 2009-10-07 2011-04-13 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법

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Publication number Publication date
KR20120128010A (ko) 2012-11-26
KR101234056B1 (ko) 2013-02-15
WO2012157866A2 (ko) 2012-11-22

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