WO2012152719A1 - Composant semi-conducteur et procédé de fabrication d'un composant semi-conducteur - Google Patents

Composant semi-conducteur et procédé de fabrication d'un composant semi-conducteur Download PDF

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Publication number
WO2012152719A1
WO2012152719A1 PCT/EP2012/058299 EP2012058299W WO2012152719A1 WO 2012152719 A1 WO2012152719 A1 WO 2012152719A1 EP 2012058299 W EP2012058299 W EP 2012058299W WO 2012152719 A1 WO2012152719 A1 WO 2012152719A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
carrier
active region
region
layer
Prior art date
Application number
PCT/EP2012/058299
Other languages
German (de)
English (en)
Inventor
Jürgen Moosburger
Hans-Jürgen LUGAUER
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2012152719A1 publication Critical patent/WO2012152719A1/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
    • F21V14/02—Controlling the distribution of the light emitted by adjustment of elements by movement of light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/02—Fastening of light sources or lamp holders with provision for adjustment, e.g. for focusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/60—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution
    • F21S41/65—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources
    • F21S41/657—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by moving light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
    • F21Y2107/50—Light sources with three-dimensionally disposed light-generating elements on planar substrates or supports, but arranged in different planes or with differing orientation, e.g. on plate-shaped supports with steps on which light-generating elements are mounted
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the present application relates to a semiconductor device and a method for producing a
  • Radiation characteristic is to be varied, for example, for an adaptive headlight system (Adaptive
  • AFS Frontlighting System
  • An object is to specify a semiconductor component in which a spatial radiation characteristic can be varied in a simple manner during operation. Furthermore, a method is to be specified with which such a semiconductor device can be produced inexpensively and reliably.
  • a semiconductor device has a plurality of emission regions which are preferably spaced apart in a lateral direction and
  • At least one emission region has a semiconductor body with an active region provided for generating radiation.
  • the semiconductor component has a carrier with a mounting surface, wherein the semiconductor body is arranged on a side of the carrier facing away from the mounting surface, and a deflection device is formed between the active region and the mounting surface.
  • Deflection device is provided to deflect the active region during operation of the semiconductor device relative to the mounting surface, in particular to tilt.
  • Deflection device is a spatial
  • Radiation characteristic can be dispensed with.
  • a plurality of the emission regions more preferably each of the emission regions, has one
  • Semiconductor body having an active region for generating radiation and one of the respective
  • the deflection device is a preferably perpendicular to a main extension plane of the active Area extending main emission axis of the respective emission region relative to the mounting plane deflectable.
  • a plurality of the semiconductor bodies are arranged on a common carrier.
  • the semiconductor bodies furthermore preferably proceed from a common, in particular epitaxial, semiconductor layer sequence with the active region.
  • Deflection device formed by means of a columnar portion of the carrier.
  • the columnar region has at least one laterally extending direction, preferably along two laterally and mutually perpendicular directions, a smaller extent than the active region.
  • an extension of the columnar area is along a lateral direction between
  • the carrier preferably has a base region.
  • the base region preferably extends continuously in a lateral direction over the semiconductor body in a lateral direction.
  • the carrier preferably has a deflection region, on which the respective semiconductor body is arranged and preferably fixed.
  • the deflection region preferably projects beyond the columnar region at least along one direction, particularly preferably on all sides.
  • the carrier has a carrier body, which is preferably formed in one piece.
  • the carrier body can furthermore be used for at least two emission regions,
  • the carrier in particular the carrier body, contains a semiconductor material.
  • Silicon is particularly suitable because of its good microstructibility, its
  • the columnar region is preferably arranged centrally to the associated semiconductor body. That is, in plan view of the semiconductor device is a
  • Center of gravity of the semiconductor body within the columnar area Preferably, a center of gravity of the columnar region and a center of gravity of the
  • the electrode assembly and the electrode assembly are disposed between the electrode assembly and the active region, in particular on the deflection region of the carrier, arranged counter electrode arrangement.
  • Electrode assembly and the counter electrode assembly is the associated active area relative to the mounting surface
  • a deflection angle relative to the mounting plane is preferably continuously adjustable via the applied voltage.
  • a deflection angle is preferably between 0 ° and 45 °, inclusive.
  • the Deflection device For a deflection of the semiconductor body in two obliquely or vertically extending directions, the Deflection device have a further electrode arrangement and a further counter electrode arrangement.
  • the carrier has a via, with which the active region can be electrically contacted by the mounting surface.
  • a cohesive connection can for example by means of a
  • Connecting layer such as an adhesive layer or a
  • the carrier serves for the mechanical stabilization of the
  • the semiconductor body The semiconductor body.
  • Semiconductor layer sequence of the semiconductor body is no longer necessary for this and can thus be removed.
  • the growth substrate itself forms the carrier.
  • the beam-shaping element can be integrated in the semiconductor body or in the form of a particularly prefabricated optical element on the
  • the beam-shaping element may be a photonic crystal be educated. Directed radiation of the radiation generated in the active region is thus simplified.
  • a radiation source which is provided for a spatially variable radiation during operation, is preferred
  • the radiation source can be designed, in particular, as an adaptive headlight, an intelligent flash, ie a flash whose emission characteristic is adjustable depending on the scene to be illuminated, or as a display device, in particular a 3D display device for displaying a three-dimensional appearing image.
  • the active region is between a first remote from the carrier
  • the semiconductor body further preferably has at least one recess which extends through the second semiconductor layer and the active region.
  • the first semiconductor layer is preferably electrically conductively connected to a first connection layer which extends through the recess.
  • a second connection layer is preferably arranged, with which the second
  • the second connection layer extends in regions between the first connection layer and the carrier.
  • Semiconductor body can be contacted in a simple manner with two electrical contacts carrier side.
  • Mounting surface are arranged is in accordance with a
  • Embodiment a semiconductor layer sequence with an active region provided for generating radiation on a side facing away from the mounting surface of the carrier
  • a plurality of semiconductor bodies is formed from the semiconductor layer sequence. At least one
  • Deflection device is formed, the one
  • the carrier is preferably before placing the
  • Semiconductor layer sequence produced by selectively removing a sacrificial layer of the carrier.
  • the sacrificial layer can therefore serve for mechanical stabilization.
  • a columnar region of the carrier can be formed.
  • the method described is particularly suitable for producing a semiconductor component described above.
  • the semiconductor device executed features can therefore also be used for the process and vice versa.
  • Figure 1A shows an embodiment of a
  • FIGS. 4A and 4B show a fourth exemplary embodiment for two different operating states in a schematic side view
  • FIGS. 5A to 5E show an exemplary embodiment of a method for producing a semiconductor component on the basis of intermediate steps shown schematically in a sectional view.
  • FIGS. 1A and 1B each show an emission region 10 according to a first exemplary embodiment of the invention
  • the semiconductor component has a plurality of such emission regions arranged side by side in the lateral direction, which for example can be arranged like a line, a matrix or a honeycomb.
  • the emission region 10 has a semiconductor body 2 with an active region 20 for generating electromagnetic radiation.
  • the semiconductor body 2 is arranged on a carrier 3 and mechanically stable connected by means of a connecting layer, such as a solder layer or an adhesive layer (not explicitly shown).
  • a connecting layer such as a solder layer or an adhesive layer (not explicitly shown).
  • Semiconductor body in particular the active region, preferably contains a III-V compound semiconductor material.
  • the carrier 3 has an integrally formed
  • Carrier body 30 with a columnar portion 31, a base portion 32 and a deflection region 33 on.
  • the columnar region is arranged between the base region 32 and the deflection region 33 of the carrier.
  • the carrier 3 On a side facing away from the semiconductor body 2, the carrier 3 has a mounting surface 34, which is provided for fastening the semiconductor component and preferably also for its electrical contacting.
  • columnar region 31 has a smaller extent than the semiconductor body 2.
  • the semiconductor body 2 is arranged centrally to the columnar region. Conveniently, the lateral extent of the
  • Carrier 3 has a sufficiently low thermal resistance for the waste heat generated in the semiconductor body 2 during operation and at the same time has sufficiently high flexibility for the stress-induced deflection.
  • the extension of the columnar region is between
  • Mounting surface 34 is externally electrically contacted. The electrical contacting of the semiconductor body 2 will be explained in more detail in connection with FIG.
  • the electrode assembly has a first one
  • Electrode 351 and a second electrode 352 disposed on the opposite side of the first electrode 351 of the columnar portion 31.
  • the electrode assembly 35 is associated with a counter electrode arrangement 36.
  • the counter electrode arrangement has a first counter electrode 361 and a second counter electrode 362 and is formed on the deflection region 33 of the carrier body 30. In supervision of the emission area 10
  • Electrode assembly and the counter electrode assembly is a deflection device 6 is formed.
  • an electrical voltage between the electrode assembly 35 and the counter-electrode arrangement 36 can, as in Figure 1B
  • the semiconductor body 2, in particular the active region 20, relative to the mounting surface 34 are deflected by an angle ⁇ .
  • Mounting surface 34 vertically vertical direction tilted so that the spatial radiation pattern of the semiconductor device by varying the
  • Main emission directions of the emission regions 10 is adjustable in operation.
  • a radiation exit surface 201 of the semiconductor body 2 facing away from the carrier 3 has a beam-shaping element 29, which in the exemplary embodiment shown acts as a photonic grating formed in the semiconductor body 2
  • Beam shaping element can also be designed as an optical element arranged on the semiconductor body 2, for example as a beam-focusing lens.
  • Beam shaping element can also be dispensed with.
  • the carrier body 30 is preferably based on a
  • Semiconductor material or consists of such.
  • silicon is suitable.
  • Gallium arsenide or germanium can also be used for the carrier.
  • the semiconductor body 2 with the active region 20 can also be in two obliquely or perpendicular to each other
  • the deflection device can have a further electrode arrangement on a side of the base area facing the semiconductor body and a further counter electrode arrangement arranged between the further electrode arrangement and the active area, wherein the
  • Electrode arrangements and the counter electrode arrangements are arranged such that the semiconductor body is deflectable in two obliquely or mutually perpendicular directions.
  • the emission regions are preferably tiltable in an angle range between 0 ° and 45 °.
  • a second exemplary embodiment of a semiconductor component 1 is shown schematically in a sectional view in FIG. 2, wherein once again only one emission region 10 is shown.
  • the semiconductor body 2 has an active region 20 which is disposed between a first side facing away from the carrier 3
  • Semiconductor layer 21 and a carrier 3 facing the second semiconductor layer 22 is arranged.
  • the semiconductor body 2 has recesses 25 extending from the carrier 3 through the second semiconductor layer 22 and the active region 20 into the first
  • Semiconductor layer 21 extend into it.
  • a first connection layer 23 is arranged, which extends through the Recess 25 extends therethrough and is electrically conductively connected to the first semiconductor layer 21.
  • a second connection layer 24 is arranged between the carrier 3 and the semiconductor body 2 and is electrically conductively connected to the second semiconductor layer 22.
  • the second connection layer 24 extends in regions
  • connection layer 23 directly adjoins the second semiconductor layer 22 and is preferably designed to be mirror-like for the radiation generated in the active region 20.
  • the second connection layer 24 directly adjoins the second semiconductor layer 22 and is preferably designed to be mirror-like for the radiation generated in the active region 20.
  • Terminal layer 24 or a partial layer thereof silver
  • Contain aluminum or palladium or consist of such a material Contain aluminum or palladium or consist of such a material.
  • Terminal layer 24 an insulating layer 26 is arranged to avoid an electrical short circuit.
  • the semiconductor body 2 is connected to the carrier 3 by means of a connecting layer 27, for example a solder or an electrically conductive adhesive layer, in a materially bonded manner.
  • the carrier 3 serves for the mechanical stabilization of the
  • epitaxial semiconductor body 2 is no longer necessary and therefore removed.
  • the carrier has two plated-through holes 37, which extend in a vertical direction through the carrier body 30.
  • the connection layer 27 By means of the connection layer 27, the first connection layer 23 is electrically conductively connected to a first contact layer 41 and the second connection layer 24 is electrically conductively connected via a partial layer 241 to a second contact layer 42.
  • charge carriers from different sides can be injected into the active region 20 by applying an external electrical voltage from the mounting surface 34 and recombine there with the emission of radiation.
  • Carrier 3 side facing away from the semiconductor body 2 so no external electrical contacts are required, which complicate the deflection of the semiconductor body and would reduce the usable area for the radiation emission.
  • the base region 32 is preferably formed in one piece for all emission regions 10 of the semiconductor component 1.
  • the contact layers 41, 42 are by means of another
  • Insulation layer 39 electrically isolated from the carrier body 30.
  • an oxide such as silicon oxide, a nitride, such as silicon nitride, or an oxynitride, such as silicon oxynitride is suitable.
  • FIGS. 3A to 3D A first exemplary embodiment of a radiation source 100 is shown with reference to FIGS. 3A to 3D, wherein the
  • Radiation source as a display device for the
  • the radiation source has a semiconductor component 1, which is preferably designed as described in connection with FIGS. 1A, 1B and 2. To the simplified
  • the semiconductor component is arranged on a connection carrier 5.
  • the individual emission regions can be controlled independently of each other, so that both the radiation power and the main emission direction by means of the
  • Deflection device for the emission ranges is individually adjustable.
  • Emission regions 10 honeycomb-shaped and arranged side by side in the lateral direction.
  • another, in particular polygonal, for example rectangular or square, form can be used for the emission ranges.
  • the deflection device is such
  • Emission regions can be carried out during operation of the display device, an adaptive and dynamic adjustment of the focus point. This is in Figures 3B, in which the outer
  • Emissive regions are deflected towards the center of the display device, and in the figure 3C, in which a
  • Deflection is made away from the center of the display device, shown schematically.
  • In the radiation direction of the display device can be a
  • FIGS. 4A and 4B A second exemplary embodiment of a radiation source is shown schematically in FIGS. 4A and 4B.
  • This second exemplary embodiment is suitable, for example, as an intelligent flash or as an adaptive headlight, wherein in turn a secondary optic may be arranged downstream of the semiconductor component 1 in the emission direction (not explicitly shown).
  • Spatial radiation characteristics are set, for example, for a flash so in operation, that the total generated radiation power of the semiconductor device in comparison to a uniform radiation amplified in the direction of an object to be illuminated 7 in front of a
  • Headlamps are suitably varied, for example, when driving through curves and / or to regulate the lighting range.
  • the radiation sources can be made more compact.
  • FIGS. 5A to 5E An exemplary embodiment of a method for producing a semiconductor component is shown schematically in FIGS. 5A to 5E.
  • a semiconductor layer 200 having an active region 20 for generating radiation is epitaxially deposited on a growth substrate 28, for example a silicon substrate or a sapphire substrate, for example by means of MOCVD or MBE (FIG. 5A). The process has been improved
  • Semiconductor layer sequence 200 a semiconductor body 2
  • the semiconductor layer sequence 200 is combined with that of the
  • a carrier for example, a silicon substrate is suitable.
  • the carrier has a sacrificial layer 38 which mechanically seals the carrier
  • a dielectric layer is suitable as a sacrificial layer, such as silicon oxide or
  • the carrier preferably already has plated-through holes 37 during production of the composite.
  • the growth substrate 28 is removed (FIG. 5C). This can be done mechanically, for example by means of grinding, lapping or polishing, chemically, for example by wet-chemical or dry-chemical etching, or by means of coherent radiation, for example
  • Growth substrate can also be removed before the composite is made.
  • the sacrificial layer for forming the columnar regions 31 may be removed. This is done for example by wet chemical etching. The risk of mechanical damage to the carrier 3, in particular the comparatively thin columnar regions 31, during the removal of the growth substrate can be reduced as much as possible. Subsequently, on a base portion 32 of the support body 30, an electrode assembly 35 and on a the

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un composant semi-conducteur (1) comportant une pluralité de zones d'émission (10), au moins une zone d'émission (10) présentant un corps semi-conducteur (2) muni d'une zone active (20) servant à la génération d'un rayonnement, et comportant un support (3) qui présente une surface de montage (34). Le corps semi-conducteur (2) est agencé sur une face du support (3) opposée à la surface de montage (34), un dispositif de déviation (6) ayant pour fonction de dévier la zone active (20) par rapport à la surface de montage (34) étant agencé entre la zone active (20) et la surface de montage (34). L'invention concerne par ailleurs un procédé de fabrication d'un composant semi-conducteur.
PCT/EP2012/058299 2011-05-06 2012-05-04 Composant semi-conducteur et procédé de fabrication d'un composant semi-conducteur WO2012152719A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011100743A DE102011100743A1 (de) 2011-05-06 2011-05-06 Halbleiterbauelement und ein Verfahren zur Herstellung eines Halbleiterbauelements
DE102011100743.5 2011-05-06

Publications (1)

Publication Number Publication Date
WO2012152719A1 true WO2012152719A1 (fr) 2012-11-15

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PCT/EP2012/058299 WO2012152719A1 (fr) 2011-05-06 2012-05-04 Composant semi-conducteur et procédé de fabrication d'un composant semi-conducteur

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WO (1) WO2012152719A1 (fr)

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Publication number Priority date Publication date Assignee Title
DE102021201588B4 (de) 2021-02-18 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische halbleitervorrichtung und verfahren zur herstellung zumindest einer optoelektronischen halbleitervorrichtung

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DE102008046107A1 (de) * 2007-09-05 2009-04-02 Koito Manufacturing Co., Ltd. Fahrzeugleuchte
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