WO2012144673A1

WO2012144673A1 - Apparatus for manufacturing semiconductor device

Info

Publication number: WO2012144673A1
Application number: PCT/KR2011/002918
Authority: WO
Inventors: 김진규
Original assignee: 주식회사 위너
Priority date: 2011-04-22
Filing date: 2011-04-22
Publication date: 2012-10-26
Also published as: KR101294812B1; KR20120119564A

Abstract

The present invention relates to an apparatus for manufacturing a semiconductor device which comprises: a support portion which supports a wafer for manufacturing a semiconductor device having TSV (Through Silicon Via); and a supply portion which comprises a groove for containing process fluid and a supply hole slopingly formed in a vertical direction in order to transfer the process fluid contained in the groove. According to the invention, a semiconductor device having TSV (Through Silicon Via) can be manufactured by a wet process and consequently the quality of the semiconductor device having TSV can be improved.

Description

Semiconductor device manufacturing device

The present invention relates to a semiconductor device manufacturing apparatus for manufacturing a semiconductor device having a through electrode (Through Silicon Via, TSV).

In general, a semiconductor device is mounted on a printed circuit board, and is subjected to a wire bonding process of connecting the semiconductor device and the printed circuit board with wires to electrically connect the semiconductor device and the printed circuit board. As such, when the semiconductor device and the printed circuit board are electrically connected using wires, signal delays are generated and there is a limit in miniaturizing the semiconductor device and the final product including the same.

Meanwhile, a technology for improving performance of a semiconductor device and a final product including the same has been developed by stacking two or more semiconductor devices and electrically connecting the stacked semiconductor devices. Two or more stacked semiconductor devices are electrically connected to each other through a wire, which causes signal delays and the like, and there is a limit in miniaturizing the semiconductor device and the final product including the same.

In order to solve the problems as described above, the development of a semiconductor device having a through electrode (Through Silicon Via, TSV) has been actively made in recent years. Such a semiconductor device may be electrically connected to a printed circuit board, another semiconductor device, etc. using the through electrode, and thus may have various advantages, such as solving the problem of being electrically connected through a wire as described above. There is also an active development of technology for applying a semiconductor device having a variety of industries.

As described above, a semiconductor device having a through electrode is mainly manufactured by a dry process. However, the dry process has a difficulty in improving the quality of a semiconductor device having a through electrode, such as difficulty in uniformly forming the surface of the through electrode. there is a problem. Therefore, in recent years, the development of the semiconductor element manufacturing apparatus which can manufacture the semiconductor element which has a through electrode by the wet process is actively performed.

The present invention has been made to solve the above-described needs, and an object of the present invention is to provide a semiconductor device manufacturing apparatus capable of manufacturing a semiconductor device having a through electrode by a wet process.

In order to achieve the object as described above, the present invention may include the following configuration.

The semiconductor device manufacturing apparatus according to the present invention may include a support for supporting a wafer for manufacturing a semiconductor device having a through electrode, and a supply for supplying a process fluid for forming the through electrode. The supply unit may include an accommodation mechanism in which an accommodation groove for accommodating the process fluid is formed, and a supply mechanism in which a first flow path through which the process fluid is supplied is formed. The supply mechanism may include a supply hole formed to be connected to each of the first flow path and the accommodation groove so that the process fluid supplied to the first flow path is supplied to the accommodation groove. The supply hole may be formed to be inclined with respect to the vertical direction from the supply portion toward the support portion so that the process fluid accommodated in the receiving groove is moved by the process fluid discharged from the supply hole.

A semiconductor device manufacturing apparatus according to the present invention includes a support for supporting a wafer for manufacturing a semiconductor device having a through electrode; A supply unit including a receiving groove in which a process for forming the through electrode is formed, and supplying a process fluid for forming the through electrode in the receiving groove; And it may include a seal coupled to the supply to seal the receiving groove. The supply unit may include a supply hole for supplying the process fluid to the receiving groove so that the process fluid accommodated in the receiving groove is rotated relative to the center of the wafer supported by the support. The supply hole may be formed to be inclined in the circumferential direction with respect to the center of the wafer supported by the support.

According to the present invention can achieve the following effects.

Industrial Applicability The present invention can manufacture a semiconductor device having a through electrode by a wet process, thereby achieving an effect of improving the quality of the semiconductor device having a through electrode.

1 and 2 are schematic cross-sectional views of a semiconductor device manufacturing apparatus according to the present invention

3 is an enlarged bottom view of portion A of FIG. 2 for a feed mechanism according to the present invention;

4 is a cross-sectional view taken along line I-I of FIG. 3 for a feed hole according to the present invention.

5 is a conceptual plan view for explaining a state in which the process fluid accommodated in the receiving groove rotates in the semiconductor device manufacturing apparatus according to the present invention;

6 and 7 are enlarged views of portion B of FIG. 2 for the seal according to the invention.

8 is a cross-sectional view illustrating a first electrode member and a second electrode member in a semiconductor device manufacturing apparatus according to the present invention.

9 is an enlarged cross-sectional view of a second electrode member according to a modified embodiment of the present invention.

10 to 14 are schematic cross-sectional views for explaining the operation relationship of the semiconductor device manufacturing apparatus according to the present invention

15 is a cross-sectional view based on line II-II of FIG. 12 for explaining the discharge hole according to the present invention.

16 and 17 are schematic cross-sectional views for describing the second channel and the injection hole in the semiconductor device manufacturing apparatus according to the present invention.

Hereinafter, a preferred embodiment of a semiconductor device manufacturing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

1 and 2 are schematic cross-sectional views of a semiconductor device manufacturing apparatus according to the present invention, Figure 3 is an enlarged bottom view of part A of Figure 2 for a supply mechanism according to the present invention, Figure 4 is a supply hole according to the present invention FIG. 3 is a cross-sectional view taken along line II of FIG. 3, FIG. 5 is a conceptual plan view illustrating a state in which a process fluid accommodated in a receiving groove rotates in a semiconductor device manufacturing apparatus according to the present invention. FIGS. 2 is an enlarged view of portion B of FIG. 2 with respect to the sealing portion, FIG. 8 is a cross-sectional view for explaining the first electrode member and the second electrode member in the semiconductor device manufacturing apparatus according to the present invention, FIG. 9 is a modified embodiment of the present invention. An enlarged cross-sectional view of a second electrode member according to an example, Figures 10 to 14 is a schematic cross-sectional view for explaining the operating relationship of the semiconductor device manufacturing apparatus according to the present invention, Figure 15 is for explaining the discharge hole according to the present invention 12 A cross-sectional view taken on the basis of -Ⅱ lines, 16 and 17 are a schematic sectional view for illustrating the second flow path and the injection port in the semiconductor device manufacturing apparatus according to the present invention.

1 and 2, a semiconductor device manufacturing apparatus 1 according to the present invention includes a support part 2 supporting a wafer 10 for manufacturing a semiconductor device having a through electrode (TSV). ), And a supply unit 3 to which a process fluid 100 (shown in FIG. 2) for supplying through electrodes is supplied. The process fluid 100 may be a liquid containing copper (Cu) for forming an electrode layer, a liquid containing silicon (Si) for forming an insulating layer, or the like.

1 and 2, the support 2 supports the wafer 10. The wafer 10 has a through hole for forming a through electrode. A plurality of through holes may be formed in the wafer 10. As shown in FIG. 1, the support part 2 may be installed to be positioned below the supply part 3.

The wafer 10 may be attached to the support 2. The wafer 10 may be attached to the support 2 by suction force. To this end, the support unit 2 may be connected to a suction device (not shown) that provides a suction force. The support part 2 may include at least one suction hole (not shown) to allow the suction force provided from the suction device to be transferred to the wafer 10. The wafer 10 may be attached to the support part 2 by static electricity. In this case, the support 2 may be an electrostatic chuck (ESC). The support part 2 may be formed in a disk shape as a whole, but is not limited thereto and may be formed in another shape such as a square plate shape as long as it can stably support the wafer 10.

1 and 2, a process fluid for forming a through electrode is supplied to the supply part 3. The supply unit 3 may be connected to the process fluid storage unit 20 in which the process fluid 100 is stored. The supply part 3 may include a receiving mechanism 31 and a supply mechanism 32.

The accommodation mechanism 31 includes an accommodation groove 311 for accommodating the process fluid 100. The process fluid 100 supplied from the process fluid storage unit 20 may be accommodated in the accommodation groove 311. The process fluid 100 may be accommodated in the accommodating groove 311 to be in contact with the wafer 10 so as to form a through electrode for the wafer 10 supported by the support part 2. . The receiving groove 311 may be formed in a cylindrical shape as a whole. The accommodation mechanism 31 may be formed in a cylindrical shape, one side of which is opened by the accommodation groove 311. The receiving mechanism 31 may be coupled to the supply mechanism 32.

1 and 2, the process fluid 100 is supplied to the supply mechanism 32. The process fluid 100 may be supplied from the process fluid storage unit 20 to the supply mechanism 32, and may be supplied to the receiving groove 311 through the supply mechanism 32. The supply mechanism 32 includes a first flow passage 321 and a supply hole 322.

The first passage 321 serves as a passage for the process fluid 100 to move. The first flow passage 321 is formed to be connected to the supply hole 322. The process fluid 100 may move along the first flow path 321 and then be supplied to the receiving groove 311 through the supply hole 322. The first passage 321 may be connected to the process fluid storage unit 20. The first flow passage 321 may be a through hole formed inside the supply mechanism 32. The first passage 321 may be formed in a cylindrical shape as a whole. When the supply mechanism 32 includes a plurality of supply holes 322, the supply holes 322 may be formed to be connected to the first passage 321.

2 to 5, the supply hole 322 is formed to be connected to each of the first passage 321 and the receiving groove 311. The supply hole 322 may be formed to penetrate through one surface 32a (shown in FIG. 4) of the supply mechanism 32. One surface 32a of the supply mechanism 32 is a surface facing the support part 2 among the surfaces of the supply mechanism 32.

As shown in FIG. 4, the supply hole 322 may be inclined with respect to the vertical direction (the arrow direction C) from the supply part 3 toward the support part 2. The process fluid 100 discharged from the supply hole 322 is a process fluid 100 accommodated in the receiving groove 311 in a direction in which the supply hole 322 is inclined with respect to the vertical direction (C arrow direction). ) Can be applied. That is, the process fluid 100 may be supplied to the receiving groove 311 at an inclined angle along the supply hole 322, thereby applying a force to the process fluid 100 accommodated in the receiving groove 311. . Accordingly, the process fluid 100 accommodated in the receiving groove 311 may be moved by the process fluid 100 discharged from the supply hole 322. Accordingly, the semiconductor device manufacturing apparatus 1 according to the present invention can achieve the following effects.

First, the semiconductor device manufacturing apparatus 1 according to the present invention may be uniformly transmitted to the wafer 10 supported by the support part 2 while the process fluid 100 accommodated in the receiving groove 311 moves. Therefore, the through electrode having improved quality may be formed on the wafer 10.

Second, the semiconductor device manufacturing apparatus 1 according to the present invention does not have a separate mechanism for moving the process fluid 100 accommodated in the receiving groove 311, such as an impeller (Imperller), the receiving groove 311 The process fluid 100 accommodated in) can be moved. Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention can form a through electrode having an improved quality on the wafer 10 at a low cost.

2 to 5, the supply hole 322 is in the vertical direction (C arrow direction, based on the center (D, shown in FIG. 2) of the wafer 10 supported by the support part 2. It may be formed to be inclined in the circumferential direction (shown in E arrow direction, shown in Figure 4) with respect to Figure 4). The process fluid 100 discharged from the supply hole 322 may provide a rotational force to the process fluid 100 accommodated in the receiving groove 311 in the circumferential direction (E arrow direction). Accordingly, the process fluid 100 accommodated in the accommodating groove 311 forms a center (D, shown in FIG. 2) of the wafer 10 by the process fluid 100 discharged from the supply hole 322. It can be rotated relative to the reference. Therefore, the process fluid 100 accommodated in the receiving groove 311 is moved by the centrifugal force while rotating based on the center (D, shown in FIG. 2) of the wafer 10 supported by the support part 2. It can be delivered to the edge of the wafer 10. Accordingly, the semiconductor device manufacturing apparatus 1 according to the present invention may form a through electrode having an improved quality up to the edge of the wafer 10.

2 to 5, the supply mechanism 32 may include a plurality of supply holes 322. The supply holes 322 may be formed along circumferences having different diameters with respect to the center (D, shown in FIG. 2) of the wafer 10 supported by the support part 2. Accordingly, the process fluid 100 accommodated in the receiving groove 311 may be rotated by the process fluid 100 discharged from the supply holes 322. Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention may form a through electrode having an improved quality up to the edge of the wafer 10. In addition, in the semiconductor device manufacturing apparatus 1 according to the present invention, since the process fluid 100 supplied from the first flow passage 321 is distributed through the supply holes 322 and supplied to the receiving groove 311, The process fluid 100 may be uniformly supplied to the wafer 10 as a whole. Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention may form a through electrode having an improved uniformity with respect to the wafer 10.

A plurality of supply holes 322 may be formed along circumferences having different sizes with respect to the center (D, shown in FIG. 3) of the wafer 10 supported by the support part 2. That is, a plurality of supply holes 322 may be formed along each of circumferences of N (N is an integer greater than 1). In the circumference having a larger diameter than the other circumference, the number of the supply holes 322 may be formed to be approximately equal to or larger than the number of the supply holes 322 formed along the smaller circumference. The circumferences are circumferences centered on the same point. The centers of the circumferences may approximately coincide with the centers of the wafer 10 supported by the support 2. That is, the centers of the circumferences may be positioned on the same vertical line as the center D of the wafer 10 supported by the support 2.

For example, the supply mechanism 32 is formed along a plurality of first supply holes 322a formed along a first circumference R1 (shown in FIG. 3) and a second circumference R2 (shown in FIG. 3). It may include a plurality of second supply holes (322b). The first circumference R1 and the second circumference R2 may have different diameters with respect to the center D of the wafer 10 supported by the support part 2. The first supply holes 322a may be spaced apart from each other at equal intervals along the first circumference R1. The second supply holes 322b may be formed to be spaced apart from each other at equal intervals along the second circumference R2. In FIG. 3, eight first supply holes 322a and eight second supply holes 322b are formed, but the present invention is not limited thereto, and the first supply holes 322a and the second supply holes are not limited thereto. Each of the two or more 322b may be formed two or more and seven or less, or nine or more. The second circumference R2 may have a diameter larger than that of the first circumference R1. In this case, the second supply holes 322b formed along the second circumference R2 may be formed to be substantially coincident with or larger than the first supply holes 322a formed along the first circumference R1. It may be.

4 and 5, the supply holes 322 are respectively disposed in the vertical direction (C arrow direction) with respect to the center (D, shown in FIG. 5) of the wafer 10 supported by the support part 2. 4 may be inclined in the circumferential direction (the direction of the E arrow). Accordingly, the process fluid 100 discharged from the supply holes 322 has a rotational force in the process fluid 100 accommodated in the receiving groove 311 (shown in FIG. 2) in the circumferential direction (E arrow direction). Can be provided. Therefore, the process fluid 100 accommodated in the receiving groove 311 (shown in FIG. 2) is formed by the process fluid 100 discharged from the supply holes 322 to form the center D of the wafer 10. It can be rotated relative to the reference. The process fluid 100 accommodated in the accommodation groove 311 (shown in FIG. 2) may be rotated in one of a clockwise direction and a counterclockwise direction according to a direction in which the supply holes 322 are inclined. For example, as shown in FIG. 5, the process fluid 100 accommodated in the receiving groove 311 (shown in FIG. 2) may rotate in a clockwise direction. A plurality of arrows in a clockwise direction in FIG. 5 shows a direction in which the process fluid 100 is discharged from the supply hole 322. Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention may form a through electrode having improved uniformity on the wafer 10 as a whole, and provide a through electrode having an improved quality up to an edge of the wafer 10. Can be formed.

1, 2, 6, and 7, the semiconductor device manufacturing apparatus 1 according to the present invention includes a sealing part 4 for sealing the receiving groove 311, and the support part ( It may include a lifting unit (5) for elevating (2).

The seal 4 is coupled to the supply 3. The seal 4 may be in contact with the wafer 10 supported by the support 2. Accordingly, the sealing part 4 may seal the accommodating groove 311 so that a process for forming a through electrode with respect to the wafer 10 supported by the support part 2 is performed. The seal 4 may be in contact with an upper surface of an edge portion of the wafer 10. The sealing part 4 may be formed in a circular ring shape as a whole, but is not limited thereto. If the sealing part 4 is in contact with the wafer 10 supported by the support part 2 to seal the accommodating groove 311, an ellipse may be used. It may be formed in other forms such as form. The seal 4 may be coupled to the receiving mechanism 31. The sealing part 4 may include a fixing member 41, a contact member 42, and a moving groove 43.

2, 6 and 7, the fixing member 41 is coupled to the supply part 3 (shown in FIG. 2). The fixing member 41 may be coupled to the receiving mechanism 31. The fixing member 41 may include a protruding member 411 to be inserted into the receiving mechanism 31. The fixing member 41 may be coupled to the accommodation mechanism 31 by an interference fit method by inserting the protrusion member 411 into the accommodation mechanism 31. Although not shown, the fixing member 41 may be coupled to the receiving mechanism 31 by fastening means such as a bolt.

The contact member 42 may be in contact with the wafer 10 supported by the support 2. When the support part 2 rises, the contact member 42 may contact the wafer 10 supported by the support part 2. When the support part 2 is lowered, the contact member 42 may be spaced apart from the wafer 10 supported by the support part 2. The contact member 42 may move closer to or further from the fixing member 41 by the moving groove 43. As shown in FIG. 6, when the contact member 42 is not in contact with the wafer 10 supported by the support part 2, the contact member 42 is moved by the movable groove 43. It may be located at a position spaced a predetermined distance from the fixing member (41). After the contact member 42 is brought into contact with the wafer 10 supported by the support 2, the lifter 5 continuously lifts the support 2, the contact as shown in FIG. 7. The member 42 may be moved in a direction closer to the fixing member 41.

Therefore, the sealing part 4 may not only contact the wafer 10 supported by the support part 2 to seal the accommodating groove 311, but also in the process of sealing the accommodating groove 311. By damaging the force applied to the wafer 10 supported by the support 2, it is possible to prevent the wafer 10 from being damaged. The seal 4 may be formed of a material having elasticity, for example, silicon, rubber, or the like.

The moving groove 43 may be formed at a portion where the fixing member 41 and the contact member 42 are connected. The contact member 42 and the fixing member 41 may be spaced apart by a predetermined distance by the moving groove 43. When the contact member 42 contacts the wafer 10 supported by the support 2, the contact member 42 may move closer to the fixing member 41.

1, 2, 6 and 7, the lifting unit 5 may raise and lower the support unit 2 between a first position and a second position. When the support 2 is located in the first position, the seal 4 is in contact with the wafer 10 supported by the support 2. When the sealing part 4 contacts the wafer 10 supported by the support part 2, the receiving groove 311 may be sealed. When the support 2 is located in the second position, the seal 4 is spaced apart from the wafer 10 supported by the support 2. When the seal 4 is spaced apart from the wafer 10 supported by the support 2, the receiving groove 311 may be opened.

The lifting and lowering part 5 can raise the supporting part 2 to position the supporting part 2 in the first position. When the support part 2 is positioned at the first position, the receiving fluid 311 may be supplied with a process fluid 100 for forming a through electrode. Accordingly, a process for forming a through electrode for the wafer 10 may be performed. When the process for forming the through electrode with respect to the wafer 10 is completed, the lifting unit 5 can position the support 2 in the second position by lowering the support 2. When the support part 2 is located in the second position, the receiving groove 311 may be opened. Accordingly, the wafer 10 on which the through electrode is formed may be unloaded from the support 2, and a new wafer 10 may be loaded on the support 2. The process of unloading the wafer 10 from the support 2 and the process of loading the wafer 10 into the support 2 may be performed by separate transfer means (not shown).

The lifting unit 5 may be coupled to the support unit 2. The lifting unit 5 is a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a gear method using a motor, a rack gear and a pinion gear, and the like, using a motor and a ball screw. The support part 2 can be elevated using a ball screw method, a belt method using a motor, a pulley and a belt, a method using a linear motor, and the like. The lifting unit 5 may be installed in the chamber 200 (shown in FIG. 1). The support part 2, the supply part 3, and the lifting part 5 may be installed in the chamber 200. The support part 2 may be installed to be elevated in the chamber 200.

Although not shown, the elevating unit 5 may elevate the supply unit 3. The lifting unit 5 may lower the supply unit 3 such that the sealing unit 4 contacts the wafer 10 supported by the support unit 2. The lifting unit 5 may raise the supply unit 3 so that the sealing unit 4 is spaced apart from the wafer 10 supported by the support unit 2. In this case, the supply part 3 may be installed to be elevated in the chamber 200. The lifting unit 5 may lift both the supporting unit 2 and the supply unit 3. In this case, the lifting unit 5 may raise and lower the support unit 2 and the supply unit 3 in directions opposite to each other. That is, the lifting unit 5 may lower the supply unit 3 when raising the support unit 2. The lifting unit 5 may raise the supply unit 3 when the support unit 2 is lowered.

1, 2 and 8, the semiconductor device manufacturing apparatus 1 according to the present invention may include a first electrode member 6 and a second electrode member 7.

The first electrode member 6 is coupled to the supply part 3. The first electrode member 6 may be coupled to the supply mechanism 32 to be positioned in the first flow passage 321. The first electrode member 6 is supported by the support part 2 by causing the process fluid 100 accommodated in the receiving groove 311 to become an anode with respect to the wafer 10 supported by the support part 2. A process of forming a through electrode for the wafer 10 may be performed. Although not shown, the first electrode member 6 may be coupled to the supply mechanism 32 to be positioned in the supply hole 322. The first electrode member 6 may be coupled to the supply mechanism 32 such that the first electrode member 6 is positioned in both the first flow path 321 and the supply hole 322.

The second electrode member 7 is coupled to the supply part 3. The second electrode member 7 may be coupled to the accommodation mechanism 31. When the support part 2 is positioned at the first position, the second electrode member 7 may contact the wafer 10 supported by the support part 2. The second electrode member 7 may be coupled to the accommodation mechanism 31 such that the second electrode member 7 is located outside the position where the sealing portion 4 is coupled to the accommodation mechanism 31. That is, the second electrode member 7 may be coupled to the accommodation mechanism 31 to be located outside the accommodation groove 311. The second electrode member 7 is in contact with the wafer 10 supported by the support part 2, so that the wafer supported by the support part 2 with respect to the process fluid 100 accommodated in the receiving groove 311 ( 10) may be a cathode. Accordingly, a process of forming a through electrode for the wafer 10 supported by the support 2 may be performed. The semiconductor device manufacturing apparatus 1 according to the present invention may include a plurality of second electrode members 7, and the second electrode members 7 may be separated from each other by a predetermined distance and coupled to the supply part 3. Can be.

8 and 9, the second electrode member 7 may include a moving member 71 and an installation member 72.

The moving member 71 may be coupled to the installation member 72. The movable member 71 has a contact surface 711 for contacting the wafer 10 supported by the support part 2 and a spaced groove for moving the contact surface 711 closer to or farther from the installation member 72. 712 may be included. When the support part 2 is positioned at the first position, the contact surface 711 may contact the wafer 10 supported by the support part 2. As the contact surface 711 contacts the wafer 10 supported by the support part 2, the contact surface 711 may move closer to the installation member 72. Therefore, the moving member 71 buffers the force applied to the wafer 10 supported by the support 2 in the process of contacting the wafer 10 supported by the support 2, thereby providing the wafer 10. ) Can be prevented from being damaged. The contact surface 711 may be restored to its original shape by moving away from the installation member 72 as it is spaced apart from the wafer 10 supported by the support 2. The moving member 71 may be formed to a thin thickness to have elasticity.

The installation member 72 is coupled to the supply portion 3 (shown in FIG. 2). The installation member 72 may be coupled to the accommodation mechanism 31. The second electrode member 7 may be coupled to the accommodation mechanism 31 by an interference fit method by inserting the installation member 72 into the accommodation mechanism 31. Although not shown, the second electrode member 7 may be coupled to the receiving mechanism 31 by a fastening means such as a bolt.

10 to 12, in the semiconductor device manufacturing apparatus 1 according to the present invention, the accommodation mechanism 31 has a discharge passage 312 through which the process fluid 100 is discharged from the accommodation groove 311. ) May be included. The discharge passage 312 may be connected to the process fluid storage 20. The process fluid storage 20 may have one side connected to the first passage 321 and the other side connected to the discharge passage 312. Accordingly, the process fluid 100 is supplied from the process fluid storage unit 20 to the receiving groove 311 through the first passage 321, and then through the discharge passage 312. Ejected from the 311 may be supplied to the process fluid storage unit 20 again. That is, the semiconductor device manufacturing apparatus 1 according to the present invention may perform a process of forming a through electrode on the wafer 10 while circulating the process fluid 100.

10 to 12, the semiconductor device manufacturing apparatus 1 according to the present invention has a circulation for circulating the process fluid 100 between the process fluid storage unit 20 and the receiving groove 311. East 30 may be included.

The circulation movement part 30 is supplied to the receiving groove 311 after the process fluid 100 is supplied from the process fluid storage part 20 to the receiving groove 311 by the supply mechanism 32. The process fluid 100 may be circulated to be discharged from the receiving groove 311 to be supplied to the process fluid storage 20. The process fluid 100 is supplied from the process fluid storage unit 20 to the receiving groove 311 through the first passage 321 and the supply hole 322, and then the discharge passage 312. It may be discharged from the receiving groove 311 through the supplied to the process fluid storage unit 20. The circulation moving unit 30 may be a circulation pump.

The circulation movement unit 30 may include a first circulation movement mechanism 310 installed between one side of the process fluid storage unit 20 and the supply unit 3. The first circulation movement mechanism 310 may suck the process fluid 100 from the process fluid storage unit 20 and discharge the sucked process fluid 100 into the first flow path 311. The circulation movement unit 30 may include a second circulation movement mechanism 320 installed between the other side of the process fluid storage unit 20 and the supply unit 3. The second circulation movement mechanism 320 sucks the process fluid 100 from the receiving groove 311 through the discharge passage 312, and sucks the sucked process fluid 100 into the process fluid storage unit 20. Can be discharged. The circulation movement unit 30 may optionally include any one of the first circulation movement mechanism 310 and the second circulation movement mechanism 320, and the first circulation movement mechanism 310 and the first movement mechanism. It may include both the two circulation mechanism (320).

10 to 12, the semiconductor device manufacturing apparatus 1 according to the present invention may include a first supply connection part 40, a second supply connection part 50, and a supply opening and closing part 60.

The first supply connection part 40 connects the process fluid storage part 20 and the supply mechanism 32. The first supply connection part 40 functions as a passage for the process fluid 100 to move. The first supply connection part 40 may be connected to the first flow path 321. The process fluid 100 stored in the process fluid storage part 20 is supplied to the first flow path 321 through the first supply connection part 40, and then through the supply hole 322, the receiving groove ( 311).

The second supply connection part 50 connects the process fluid storage part 20 and the receiving mechanism 31. The second supply connector 50 functions as a passage for the process fluid 100 to move. The accommodation mechanism 31 includes a supply passage 313 for supplying the process fluid 100 supplied from the second supply connection portion 50 to the accommodation groove 311. The supply passage 313 is formed such that one side is connected to the second supply connector 50 and the other side is connected to the receiving groove 311. After the process fluid 100 stored in the process fluid storage unit 20 is supplied to the supply passage 313 through the second supply connection unit 50, the receiving groove 311 through the supply passage 313. ) Can be supplied. The second supply connector 50 and the first supply connector 40 may be branched from the first conduit 210 connected to one side of the process fluid storage unit 20.

The supply opening and closing part 60 selectively opens or closes any one of the first supply connection part 40 and the second supply connection part 50. The process fluid 100 stored in the process fluid storage unit 20 may be connected to the first flow path 321 through any one of the first supply connection part 40 and the second supply connection part 50. ) Is supplied to any one of the supply passage 313 and the receiving groove 311 through any one of the first passage 321 and the supply passage 313. The supply opening and closing unit 60 may include a first supply opening and closing mechanism 610 installed at the first supply connection portion 40 and a second supply opening and closing mechanism 620 installed at the second supply connection portion 50. The supply opening and closing part 60 selectively opens or closes any one of the first supply opening and closing mechanism 610 and the second supply opening and closing mechanism 620, thereby providing the first supply connecting portion 40 and the second supply connecting portion ( Any one of 50) can be selectively opened and closed. The first supply opening and closing mechanism 610 and the second supply opening and closing mechanism 620 may be valves.

10 to 12, the semiconductor device manufacturing apparatus 1 according to the present invention may include a first discharge connection unit 70, a second discharge connection unit 80, and a discharge opening and closing unit 90.

The first discharge connection part 70 connects the process fluid storage part 20 and the receiving mechanism 31. The first discharge connection portion 70 functions as a passage for the process fluid 100 to move. The first discharge connector 70 may be connected to the discharge passage 312. The process fluid 100 may be discharged from the receiving groove 311 through the discharge passage 312, and then supplied to the process fluid storage unit 20 through the first discharge connection unit 70.

The second discharge connection portion 80 connects the process fluid storage portion 20 and the supply mechanism 32. The second discharge connector 80 functions as a passage for the process fluid 100 to move. The second discharge connector 80 may be connected to the first flow passage 321. The process fluid 100 is discharged from the receiving groove 311 through the supply hole 322 and the first flow path 321, and then the process fluid storage unit through the second discharge connection portion 80 20). The second discharge connection unit 80 and the first discharge connection unit 70 may be formed branched from the second conduit 220 connected to the other side of the process fluid storage unit 20.

The discharge opening and closing part 90 selectively opens and closes any one of the first discharge connection part 70 and the second discharge connection part 80. The process fluid 100 is discharged from the receiving groove 311 through any one of the first discharge connection portion 70 and the second discharge connection portion 80, the process fluid storage unit 20 ) Can be supplied. For example, when the first discharge connector 70 is opened and the second discharge connector 80 is closed, the process fluid 100 is discharged from the receiving groove 311 through the discharge passage 312. Then, it may be supplied to the process fluid storage unit 20 through the first discharge connection portion 70. When the second discharge connector 80 is opened and the first discharge connector 70 is closed, the process fluid 100 is discharged from the receiving groove 311 through the first flow path 321. In addition, the process fluid storage unit 20 may be supplied through the second discharge connection unit 80. The discharge opening and closing unit 90 may include a first discharge opening and closing mechanism 910 installed at the first discharge connection portion 70 and a second discharge opening and closing mechanism 920 installed at the second discharge connection portion 80. The discharge opening and closing portion 90 selectively opens and closes any one of the first discharge opening and closing mechanism 910 and the second discharge opening and closing mechanism 920, thereby allowing the first discharge connection portion 70 and the second discharge connection portion ( Either one of 80) can be selectively opened and closed. The first discharge opening and closing mechanism 910 and the second discharge opening and closing mechanism 920 may be valves.

Referring to FIG. 13, the accommodation mechanism 31 includes a discharge hole 314 connected to each of the accommodation groove 311 and the discharge passage 312. The discharge hole 314 may be formed to be positioned between the wafer 10 supported by the support part 2 and the supply mechanism 32. That is, the discharge hole 314 is formed at a position spaced apart from the supply mechanism 32 by a predetermined distance, and formed at a position spaced apart from the wafer 10 supported by the support portion 2. Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention is compared with the process fluid 100 is discharged from the receiving groove 311 through the supply hole 322 and the first passage 321, A larger amount of process fluid 100 may be discharged from the receiving groove 311. As the process fluid 100 is discharged from the receiving groove 311, the water level of the process fluid 100 is lowered. As the water level of the process fluid 100 is lowered, the supply mechanism 32 is reduced. This is because the process fluid 100 cannot be discharged from the receiving groove 311 through the supply hole 322 and the first flow path 321 in the fixed state. On the other hand, since the discharge hole 314 is also formed at a position spaced apart from the wafer 10 supported by the support portion 2, there is a limit in discharging the process fluid 100 from the receiving groove 311. . In order to solve this problem, the supply part 3 further includes an elevating mechanism 33 for elevating the supply mechanism 32.

13 and 14, the lifting mechanism 33 may lower the supply mechanism 32 toward the support part 2. As the process fluid 100 accommodated in the receiving groove 311 is discharged through the discharge passage 312, the level of the process fluid 100 accommodated in the receiving groove 311 is lowered. As shown in FIG. 13, when the water level of the process fluid 100 is lower than the position where the discharge hole 314 is formed, the process fluid 100 passes through the discharge passage 312 through the receiving groove 311. ) Can not be discharged. In this case, as shown in FIG. 14, the lifting mechanism 33 supports the supply mechanism 32 such that the supply mechanism 32 is close to the process fluid 100 remaining in the receiving groove 311. Descend toward (2). Accordingly, the process fluid 100 remaining in the accommodating groove 311 may be discharged from the accommodating groove 311 through the supply hole 322 and the first passage 321. Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention may discharge a larger amount of the process fluid 100 from the receiving groove 311 from the receiving groove 311. By adjusting the distance that the lifting mechanism 33 lowers the supply mechanism 32, the semiconductor device manufacturing apparatus 1 according to the present invention is to remove the process fluid 100 from the receiving groove 311 The process fluid 100 remaining in the accommodation groove 311 may be discharged from the accommodation groove 311 through the supply hole 322 and the first flow path 321.

The lifting mechanism 33 is a cylinder method using a hydraulic cylinder or a pneumatic cylinder, a gear method using a motor and a rack gear and a pinion gear, a ball screw method using a motor and a ball screw, a motor, a pulley and a belt, etc. The feeding mechanism 32 can be elevated by using a belt method, a method using a linear motor, or the like. The lifting mechanism 33 may be installed in the chamber 200 (shown in FIG. 1). The supply mechanism 32 may be installed to be elevated in the chamber 200.

1 to 15, in the semiconductor device manufacturing apparatus 1 according to the present invention, after supplying the process fluid 100 to the receiving groove 311, the process fluid storage unit 20 and the accommodation The process of forming a through electrode for the wafer 10 supported by the support part 2 while circulating the process fluid 100 between the grooves 311 is performed. When the process of forming the through electrode for the wafer 10 supported by the support 2 is completed, the semiconductor device manufacturing apparatus 1 according to the present invention is to remove the process fluid 100 from the receiving groove 311 Discharge. Looking specifically at this, it is as follows.

First, as shown in FIG. 1, a wafer 10 for forming a through electrode in a state in which the support 2 and the supply 3 are spaced apart from each other is loaded on the support 2. In this case, the support portion 2 is in a lowered state to be positioned at the second position. The wafer 10 may be loaded onto the support 2 by a separate transfer means.

Next, as shown in FIG. 10, the elevating part 5 raises the supporting part 2 such that the supporting part 2 is positioned at the first position. Accordingly, the sealing part 4 (shown in FIG. 7) may be in contact with the wafer 10 supported by the support part 2 to seal the receiving groove 311. In this case, the second electrode member 7 (shown in FIG. 9) may be in contact with the wafer 10 supported by the support 2.

Next, as shown in FIG. 11, the supply opening and closing part 60 opens the second supply connection part 50 and closes the first supply connection part 40. Accordingly, the process fluid 100 stored in the process fluid storage unit 20 is supplied to the supply passage 313 through the second supply connection unit 50, and then the supply passage of the accommodation mechanism 31 is provided. It is supplied to the receiving groove 311 (shown in FIG. 10) through 313. Accordingly, the receiving groove 311 may be filled with the process fluid 100. The process fluid 100 may be supplied to the accommodating groove 311 through the supply passage 313 until the process fluid 100 reaches a position at or near the supply mechanism 32. A portion connected to the receiving groove 311 in the supply passage 313 may be formed between the wafer 10 supported by the support 2 and the supply mechanism 32. That is, the portion of the supply passage 313 connected to the receiving groove 311 is greater than the distance from which the supply mechanism 32 is spaced apart from the wafer 10 supported by the support portion 2. It may be formed to be spaced apart from the wafer 10 supported by a short distance. Therefore, in the semiconductor device manufacturing apparatus 1 according to the present invention, the process fluid 100 is compared with the process fluid 100 supplied to the empty receiving groove 311 through the supply mechanism 32. The force applied to the wafer 10 supported by the support 2 in the process of being supplied to the empty receiving groove 311 can be reduced. Accordingly, the semiconductor device manufacturing apparatus 1 according to the present invention may prevent the wafer 10 from being damaged while the process fluid 100 is supplied to the empty receiving groove 311. In this case, the discharge opening and closing part 90 may close both the first discharge connection part 70 and the second discharge connection part 80 such that the receiving groove 311 is filled with the process fluid 100.

Next, as shown in FIG. 12, when the receiving groove 311 (shown in FIG. 10) is filled with the process fluid 100, the supply opening and closing part 60 closes the second supply connection part 50. The first supply connection part 40 is opened. Accordingly, the process fluid 100 stored in the process fluid storage part 20 is supplied to the first flow path 321 through the first supply connection part 40 and then through the supply hole 322. It is supplied to the receiving groove 311. In this case, the discharge opening and closing part 90 opens the first discharge connection part 70 and closes the second discharge connection part 80. Accordingly, the process fluid 100 accommodated in the receiving groove 311 is discharged from the receiving groove 311 through the discharge hole 314 and the discharge passage 312, the first discharge connection portion 70 It may be supplied to the process fluid storage unit 20 through). The process fluid 100 supplied to the process fluid storage 20 is supplied to the first flow path 321 through the first supply connection part 40, and then again through the supply hole 322. It is supplied to the receiving groove 311. That is, in the semiconductor device manufacturing apparatus 1 according to the present invention, as shown in FIG. 12, the first supply connection part 40, the first flow path 321, the supply hole 322, and the discharge hole 314. ), The process fluid 100 may be circulated between the process fluid storage unit 20 and the receiving groove 311 through the discharge passage 312 and the first discharge connection unit 70. In this process, a process of forming a through electrode may be performed on the wafer 10 supported by the support 2. When the through-electrode is formed on the wafer 10 supported by the support 2, the process fluid 100 accommodated in the receiving groove 311 is illustrated in the first electrode member 6 (FIG. 8). The wafer 10 supported by the support 2 may be a cathode by the second electrode member 7 (shown in FIG. 8).

Here, the process fluid 100 accommodated in the receiving groove 311 (shown in FIG. 10) is the wafer 10 supported by the support part 2 by the process fluid 100 discharged from the supply hole 322. It can be rotated relative to the center (D, shown in Figure 12) of. In this case, the discharge hole 314 is implemented as follows so that the process fluid 100 accommodated in the receiving groove 311 can be easily discharged from the receiving groove 311 through the discharge hole (314). Can be. 12 and 15, the discharge hole 314 is an inlet hole 3141 for introducing the process fluid 100 (shown in FIG. 12) from the receiving groove 311 and the process fluid 100. An outlet hole (3142) for being discharged to the discharge passage 312, and the connection hole (3143) connecting the inlet hole (3141) and the outlet hole (3142). The outlet hole 3142 is formed in the receiving groove (D, shown in FIG. 15) from an imaginary straight line P (shown in FIG. 15) connecting the center (D, shown in FIG. 15) of the wafer 10 and the inlet hole 3141. The process fluid 100 accommodated in 311 may be formed at positions spaced apart from each other in a direction in which the process fluid is rotated (the direction of the E arrow, shown in FIG. That is, the discharge hole 314 may be formed to be inclined with respect to the straight line P in the direction (E arrow direction) in which the process fluid 100 accommodated in the receiving groove 311 rotates. Therefore, the process fluid 100 accommodated in the receiving groove 311 is the center D of the wafer 10 supported by the support part 2 by the process fluid 100 discharged from the supply hole 322. It can be easily discharged from the receiving groove 311 through the discharge hole 314 while moving relative to the. A plurality of discharge holes 314 may be formed in the accommodation mechanism 31. The discharge hole 314 may be formed in the receiving mechanism 31 to be spaced apart from each other at a predetermined angle in the direction in which the process fluid 100 rotates (E arrow direction). The discharge passage 312 may be formed in the accommodation mechanism 31 to surround the discharge holes 314. The discharge passage 312 may be formed in a circular ring shape as a whole. The discharge passage 312 and the supply passage 311 may be separately formed in the accommodation mechanism 31. A single flow path may be formed in the accommodation mechanism 31, and in this case, the discharge flow path may be formed by selectively opening or closing one of the second supply connection part 50 and the first discharge connection part 70. 312 and the supply passage 311 may selectively function. The discharge hole 314 is also for discharging the process fluid 100 from the receiving groove 311 as any one of the first supply connection portion 50 and the first discharge connection portion 70 is selectively opened and closed. A function may be performed or a function for supplying the process fluid 100 to the receiving groove 311 may be performed.

Next, when the process of forming a through electrode for the wafer 10 supported by the support 2 is completed, the process fluid 100 accommodated in the receiving groove 311 is discharged as shown in FIG. It is discharged from the receiving groove 311 through the 314 and the discharge passage 312. The process fluid 100 may be supplied to the process fluid storage unit 20 through the first discharge connection unit 70. In this case, the supply opening and closing part 60 closes both the first supply connection part 40 and the second supply connection part 50. Accordingly, the process fluid 100 accommodated in the accommodating groove 311 is discharged into the accommodating groove 311 through the discharge hole 314 and the discharge passage 312 is lowered.

Next, when the level of the process fluid 100 accommodated in the receiving groove 311 is lower than the position where the discharge hole 314 is formed, as shown in Figure 14 the lifting mechanism 33 is the supply mechanism ( The supply mechanism 32 is lowered toward the support part 2 so that 32 is close to the process fluid 100 remaining in the receiving groove 311. Accordingly, the process fluid 100 remaining in the accommodating groove 311 may be discharged from the accommodating groove 311 through the supply hole 322 and the first passage 321. In this case, the discharge opening and closing part 90 closes the first discharge connection part 70 and opens the second discharge connection part 80. Accordingly, the process fluid 100 remaining in the accommodating groove 311 is discharged from the accommodating groove 311 through the supply hole 322 and the first flow passage 321, and then the second discharge connection part. It may be supplied to the process fluid storage unit 20 through 80.

Next, when the process fluid 100 is discharged from the accommodating groove 311, as shown in FIG. 1, the elevating part 5 has the support part 2 such that the support part 2 is positioned at the second position. Down). When the support part 2 is located in the second position, the transfer means (not shown) unloads the wafer 10 from the support part 2, and then a new wafer 10 is loaded into the support part 2. Can be loaded on This process may be performed after the elevating mechanism 33 raises the supply mechanism 32.

Referring to FIG. 16, the supply mechanism 32 may include a second passage 323 and an injection hole 324.

The second flow passage 323 is connected to the fluid supply unit (8). The fluid supply unit 8 may include at least one of a cleaning fluid for washing the sidewall 31a on which the accommodation groove 311 is formed and a drying fluid for drying the sidewall 31a at the accommodation mechanism 31. Supply to 2 euros (323). The washing fluid may be water, pure water (DI, Disilled Water) and the like. The dry fluid may be air, nitrogen (N ₂ ), or the like. The second flow path 323 is formed to be positioned outside the first flow path 321 in the supply mechanism 32. The first flow passage 321 includes a portion formed in a cylindrical shape and a portion formed in a disk shape. A portion formed in a cylindrical shape in the first flow passage 321 is connected to the process fluid storage portion 20, and a portion formed in a disk shape is connected to the supply holes 322. The second passage 323 is formed in the supply mechanism 32 to be positioned outside the first passage 321 along the first passage 321.

The injection hole 324 is formed to be connected to the second passage 323. The injection hole 324 may be formed through the supply mechanism 32 in the direction toward the side wall 31a of the accommodation mechanism 31. Accordingly, the washing fluid and the drying fluid may be injected toward the side wall 31a of the receiving device 31 through the injection hole 324. Therefore, after the semiconductor device manufacturing apparatus 1 according to the present invention performs the process of forming a through electrode for the wafer 10, the sidewall 31a of the accommodation mechanism 31 is cleaned using the cleaning fluid. can do. In addition, the semiconductor device manufacturing apparatus 1 according to the present invention may dry the sidewall 31a of the accommodation mechanism 31 by using the drying fluid. In the semiconductor device manufacturing apparatus 1 according to the present invention, after washing the sidewall 31a of the accommodation mechanism 31 using the cleaning fluid, the sidewall 31a of the accommodation mechanism 31 is used using the drying fluid. ) May be dried.

The injection hole 324 may be formed to be inclined in a downward direction (F arrow direction) from the supply mechanism 32 toward the support 2. Accordingly, the injection hole 324 may allow the cleaning fluid to be injected at an inclined angle in the downward direction (F arrow direction). Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention uses the cleaning fluid injected from the injection hole 324, the process fluid 100, foreign matters, etc. remaining on the side wall 31a of the receiving mechanism 31. By moving in the downward direction (F arrow direction), the side wall 31a of the accommodation mechanism 31 can be washed easily and efficiently. In addition, the injection hole 324 may allow the drying fluid to be injected at an inclined angle in the downward direction (F arrow direction). Accordingly, in the semiconductor device manufacturing apparatus 1 according to the present invention, moisture remaining on the sidewall 31a of the accommodation mechanism 31 is dried in the downward direction (F) using a dry fluid injected from the injection hole 324. By moving in the direction of the arrow), the side wall 31a of the accommodation mechanism 31 can be dried easily and efficiently. The injection holes 324 may be spaced apart from each other by a predetermined distance along the circumferential direction of the supply mechanism 32. The injection holes 324 may be formed to be connected to the second passage 323.

16 and 17, when the cleaning fluid is sprayed toward the side wall 31a of the accommodation mechanism 31 through the second passage 323 and the injection hole 324 (shown in FIG. 16). As illustrated in FIG. 17, the elevating mechanism 33 may lower the supply mechanism 32 toward the support part 2. Therefore, the semiconductor device manufacturing apparatus 1 according to the present invention may clean the entire sidewall 31a of the accommodation mechanism 31 by using a cleaning fluid injected from the injection hole 324 (shown in FIG. 16). have. When a drying fluid is injected toward the side wall 31a of the accommodation mechanism 31 through the second flow path 323 and the injection hole 324 (shown in FIG. 16), as shown in FIG. The lifting mechanism 33 may lower the supply mechanism 32 toward the support part 2. Accordingly, the semiconductor device manufacturing apparatus 1 according to the present invention may dry the entire sidewall 31a of the accommodation mechanism 31 by using a drying fluid injected from the injection hole 324 (shown in FIG. 16). have.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and it is common in the art that various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be apparent to those who have knowledge.

Claims

A support for supporting a wafer for manufacturing a semiconductor device having a through electrode; And

A supply unit to which a process fluid for forming a through electrode is supplied;

The supply portion includes a receiving mechanism having a receiving groove for receiving the process fluid, and a supply mechanism having a first flow path through which the processing fluid is supplied;

The supply mechanism includes a supply hole formed to be connected to each of the first flow path and the receiving groove so that the process fluid supplied into the first flow path is supplied to the receiving groove.

And the supply hole is formed to be inclined with respect to the vertical direction from the supply part toward the support part such that the process fluid accommodated in the receiving groove is moved by the process fluid discharged from the supply hole.
The method of claim 1,

A sealing part for sealing the receiving groove, and a lifting part for lifting up and down the support part in a vertical direction;

The seal is coupled to the supply,

And the elevating portion elevates the support portion between a first position where the seal portion contacts the wafer supported by the support portion and a second position where the seal portion is spaced apart from the wafer supported by the support portion.
The method of claim 1,

The supply mechanism includes a plurality of supply holes;

The supply holes are formed along the circumference having a different diameter with respect to the center of the wafer supported on the support so that the process fluid accommodated in the receiving groove is rotated by the process fluid discharged from the supply holes Semiconductor device manufacturing apparatus.
The method of claim 1,

The supply mechanism includes a plurality of first supply holes formed along a first cylinder, and a plurality of second supply holes formed along a second cylinder, wherein the first cylinder and the second cylinder are supported on the support. Semiconductor device manufacturing apparatus, characterized in that having a different diameter with respect to the center of the.
The method of claim 1,

The first channel is connected to one side of the process fluid storage unit in which the process fluid is stored;

The accommodation mechanism includes a discharge passage for discharging the process fluid from the receiving groove, wherein the discharge passage is connected to the other side of the process fluid storage unit.
6. The semiconductor device manufacturing apparatus according to any one of claims 1 to 5, wherein the supply hole is formed to be inclined in a circumferential direction with respect to the center of the wafer supported by the support portion with respect to the vertical direction.
The method of claim 6,

The receiving mechanism includes a discharge passage connected to the process fluid storage, and a discharge hole formed to be connected to each of the receiving groove and the discharge passage;

The discharge hole includes an inlet hole for introducing the process fluid from the receiving groove, an outlet hole for discharging the process fluid into the discharge passage, and a connection hole connecting the inlet hole and the outlet hole,

And the outlet hole is formed at a position spaced apart from the virtual straight line connecting the center of the wafer and the inlet hole in a direction in which the process fluid accommodated in the receiving groove rotates.
The method of claim 1,

And a circulation moving part configured to cyclically move the process fluid between the process fluid storage unit and the receiving groove for storing the process fluid;

The circulation moving unit circulates the process fluid so that the process fluid is supplied to the receiving groove through the supply mechanism from the process fluid storage unit and then discharged into the receiving groove through the receiving mechanism to be supplied to the process fluid storage unit. A semiconductor device manufacturing apparatus characterized in that.
The method of claim 1,

A first supply connector connecting the process fluid storage unit and the first flow path for storing the process fluid, a second supply connection unit connecting the process fluid storage unit and the receiving mechanism, and the first supply connection unit and the second supply unit It further comprises a supply opening and closing portion for selectively opening and closing any one of the supply connection portion;

The accommodation mechanism includes a supply passage for supplying a process fluid to the receiving groove, wherein the supply passage is formed so that one side is connected to the second supply connection portion and the other side is connected to the receiving groove. Device.
The method of claim 1,

A first discharge connection part connecting the discharge flow path formed in the accommodation mechanism and the process fluid storage part;

A second discharge connector connecting the first fluid to the process fluid storage unit for storing a process fluid; And

And a discharge opening and closing portion for selectively opening and closing any one of the first discharge connection portion and the second discharge connection portion.
The method of claim 10,

The supply unit includes a lifting mechanism for lifting the supply mechanism;

The elevating mechanism lowers the supply mechanism toward the support part such that the process fluid remaining in the receiving groove is discharged through the supply hole and the first channel after the process fluid accommodated in the receiving groove is discharged through the discharge passage. A semiconductor device manufacturing apparatus.
The method of claim 2,

A first electrode member coupled to the supply mechanism, and a second electrode member coupled to the receiving mechanism;

And the second electrode member is in contact with the wafer supported by the support when the support mechanism is positioned in the first position.
The method of claim 12,

The second electrode member includes a coupling member coupled to the accommodation mechanism, and a moving member coupled to the coupling member;

And the moving member includes a contact surface for contacting the wafer supported by the support, and a separation groove for moving the contact surface closer or farther from the coupling member.
The method of claim 2, wherein the sealing portion

A fixing member coupled to the receiving mechanism,

A contact member for contacting the wafer supported by the support, and

And a contact groove for moving the contact member closer to or farther from the fixing member.
The method of claim 1, wherein the supply mechanism

A second flow path for supplying at least one of a cleaning fluid for washing the side wall in which the accommodation groove is formed in the accommodation mechanism and a drying fluid for drying the side wall to the accommodation groove; And

And an injection hole formed to be connected to the second flow path such that at least one of a cleaning fluid and a drying fluid is injected toward the side wall.
The method of claim 15,

The supply unit further includes an elevating mechanism for elevating the supply mechanism;

The supply mechanism includes a plurality of injection holes, the injection hole is a semiconductor device manufacturing apparatus, characterized in that formed in the inclined downward direction toward the support portion in the supply mechanism.
A support for supporting a wafer for manufacturing a semiconductor device having a through electrode;

A supply unit including a receiving groove in which a process for forming the through electrode is formed, and supplying a process fluid for forming the through electrode in the receiving groove; And

It includes a seal coupled to the supply to seal the receiving groove,

The supply unit includes a supply hole for supplying the process fluid to the receiving groove so that the process fluid accommodated in the receiving groove is rotated relative to the center of the wafer supported by the support,

The supply hole is a semiconductor device manufacturing apparatus, characterized in that formed inclined in the circumferential direction relative to the center of the wafer supported by the support.