WO2012134105A3 - Transistor en couche mince d'oxyde de zinc et son procédé de fabrication - Google Patents

Transistor en couche mince d'oxyde de zinc et son procédé de fabrication Download PDF

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Publication number
WO2012134105A3
WO2012134105A3 PCT/KR2012/002088 KR2012002088W WO2012134105A3 WO 2012134105 A3 WO2012134105 A3 WO 2012134105A3 KR 2012002088 W KR2012002088 W KR 2012002088W WO 2012134105 A3 WO2012134105 A3 WO 2012134105A3
Authority
WO
WIPO (PCT)
Prior art keywords
zinc oxide
manufacturing
forming
thin film
zinc
Prior art date
Application number
PCT/KR2012/002088
Other languages
English (en)
Korean (ko)
Other versions
WO2012134105A2 (fr
Inventor
김연상
박시윤
김경준
Original Assignee
서울대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울대학교산학협력단 filed Critical 서울대학교산학협력단
Publication of WO2012134105A2 publication Critical patent/WO2012134105A2/fr
Publication of WO2012134105A3 publication Critical patent/WO2012134105A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un film mince d'oxyde de zinc de type n et comprend les étapes consistant à : former un complexe d'amine et de zinc par réaction d'oxyde de zinc avec de l'ammoniac ; former une solution d'hydroxyde de zinc par mélange du complexe d'amine et de zinc avec un métal alcalin ou un oxyde d'un métal alcalinoterreux dans un solvant polaire ; former un film semi-conducteur par application de la solution sur un substrat ; former un film d'oxyde de zinc lequel est dopé par le métal alcalin ou le métal alcalinoterreux par chauffage du film semi-conducteur.
PCT/KR2012/002088 2011-03-25 2012-03-22 Transistor en couche mince d'oxyde de zinc et son procédé de fabrication WO2012134105A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20110027226A KR101192221B1 (ko) 2011-03-25 2011-03-25 산화아연 박막 트랜지스터 및 이의 제조방법
KR10-2011-0027226 2011-03-25

Publications (2)

Publication Number Publication Date
WO2012134105A2 WO2012134105A2 (fr) 2012-10-04
WO2012134105A3 true WO2012134105A3 (fr) 2013-01-03

Family

ID=46932072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/002088 WO2012134105A2 (fr) 2011-03-25 2012-03-22 Transistor en couche mince d'oxyde de zinc et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR101192221B1 (fr)
WO (1) WO2012134105A2 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093974A (ja) * 2003-09-18 2005-04-07 Ind Technol Res Inst 薄膜トランジスタ素子活性層の半導体材料とその製造方法
JP2005217038A (ja) * 2004-01-28 2005-08-11 Sanyo Electric Co Ltd ｐ型ＺｎＯ半導体膜及びその製造方法
KR20100055655A (ko) * 2008-11-18 2010-05-27 국민대학교산학협력단 ｎ-타입 ＺｎＯ 반도체 박막의 제조 방법 및 박막 트랜지스터
JP2010541237A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 原子層堆積による薄膜トランジスタの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005093974A (ja) * 2003-09-18 2005-04-07 Ind Technol Res Inst 薄膜トランジスタ素子活性層の半導体材料とその製造方法
JP2005217038A (ja) * 2004-01-28 2005-08-11 Sanyo Electric Co Ltd ｐ型ＺｎＯ半導体膜及びその製造方法
JP2010541237A (ja) * 2007-09-26 2010-12-24 イーストマン コダック カンパニー 原子層堆積による薄膜トランジスタの製造方法
KR20100055655A (ko) * 2008-11-18 2010-05-27 국민대학교산학협력단 ｎ-타입 ＺｎＯ 반도체 박막의 제조 방법 및 박막 트랜지스터

Also Published As

Publication number Publication date
KR101192221B1 (ko) 2012-10-17
WO2012134105A2 (fr) 2012-10-04
KR20120108851A (ko) 2012-10-05

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