WO2012134105A3 - Zinc oxide thin film transistor and manufacturing method thereof - Google Patents
Zinc oxide thin film transistor and manufacturing method thereof Download PDFInfo
- Publication number
- WO2012134105A3 WO2012134105A3 PCT/KR2012/002088 KR2012002088W WO2012134105A3 WO 2012134105 A3 WO2012134105 A3 WO 2012134105A3 KR 2012002088 W KR2012002088 W KR 2012002088W WO 2012134105 A3 WO2012134105 A3 WO 2012134105A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- zinc oxide
- manufacturing
- forming
- thin film
- zinc
- Prior art date
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title abstract 8
- 239000011787 zinc oxide Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052783 alkali metal Inorganic materials 0.000 abstract 2
- 150000001340 alkali metals Chemical class 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- -1 zinc amine Chemical class 0.000 abstract 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002798 polar solvent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 abstract 1
- 229940007718 zinc hydroxide Drugs 0.000 abstract 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
A manufacturing method of an n-type zinc oxide thin film is provided and comprises the steps of: forming a zinc amine complex by reacting zinc oxide with ammonia; forming a zinc hydroxide solution by mixing the zinc amine complex with an alkali metal or oxide of an alkaline earth metal in a polar solvent; forming a semiconductor film by applying the solution on a substrate; forming a zinc oxide film which is doped with the alkali metal or the alkaline earth metal by heating the semiconductor film.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20110027226A KR101192221B1 (en) | 2011-03-25 | 2011-03-25 | Zinc oxide thin film transistor and fabricating method thereof |
KR10-2011-0027226 | 2011-03-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012134105A2 WO2012134105A2 (en) | 2012-10-04 |
WO2012134105A3 true WO2012134105A3 (en) | 2013-01-03 |
Family
ID=46932072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2012/002088 WO2012134105A2 (en) | 2011-03-25 | 2012-03-22 | Zinc oxide thin film transistor and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101192221B1 (en) |
WO (1) | WO2012134105A2 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093974A (en) * | 2003-09-18 | 2005-04-07 | Ind Technol Res Inst | Semiconductor material for active layer of thin film transistor element and its manufacturing method |
JP2005217038A (en) * | 2004-01-28 | 2005-08-11 | Sanyo Electric Co Ltd | P-TYPE ZnO SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THE SAME |
KR20100055655A (en) * | 2008-11-18 | 2010-05-27 | 국민대학교산학협력단 | Method for preparing n-type zno semiconductor thin film and thin film transistor |
JP2010541237A (en) * | 2007-09-26 | 2010-12-24 | イーストマン コダック カンパニー | Thin film transistor manufacturing method by atomic layer deposition |
-
2011
- 2011-03-25 KR KR20110027226A patent/KR101192221B1/en active IP Right Grant
-
2012
- 2012-03-22 WO PCT/KR2012/002088 patent/WO2012134105A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005093974A (en) * | 2003-09-18 | 2005-04-07 | Ind Technol Res Inst | Semiconductor material for active layer of thin film transistor element and its manufacturing method |
JP2005217038A (en) * | 2004-01-28 | 2005-08-11 | Sanyo Electric Co Ltd | P-TYPE ZnO SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THE SAME |
JP2010541237A (en) * | 2007-09-26 | 2010-12-24 | イーストマン コダック カンパニー | Thin film transistor manufacturing method by atomic layer deposition |
KR20100055655A (en) * | 2008-11-18 | 2010-05-27 | 국민대학교산학협력단 | Method for preparing n-type zno semiconductor thin film and thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
WO2012134105A2 (en) | 2012-10-04 |
KR101192221B1 (en) | 2012-10-17 |
KR20120108851A (en) | 2012-10-05 |
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