WO2012118621A3 - Method and system for design of enhanced patterns for charged particle beam lithography - Google Patents

Method and system for design of enhanced patterns for charged particle beam lithography Download PDF

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Publication number
WO2012118621A3
WO2012118621A3 PCT/US2012/025328 US2012025328W WO2012118621A3 WO 2012118621 A3 WO2012118621 A3 WO 2012118621A3 US 2012025328 W US2012025328 W US 2012025328W WO 2012118621 A3 WO2012118621 A3 WO 2012118621A3
Authority
WO
WIPO (PCT)
Prior art keywords
design
charged particle
particle beam
beam lithography
pattern
Prior art date
Application number
PCT/US2012/025328
Other languages
French (fr)
Other versions
WO2012118621A2 (en
Inventor
Akira Fujimura
Kazuyuki Hagiwara
Stephen F. Meier
Ingo Bork
Original Assignee
D2S, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/037,270 external-priority patent/US9057956B2/en
Priority claimed from US13/037,268 external-priority patent/US20120221980A1/en
Application filed by D2S, Inc. filed Critical D2S, Inc.
Publication of WO2012118621A2 publication Critical patent/WO2012118621A2/en
Publication of WO2012118621A3 publication Critical patent/WO2012118621A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H01J2237/31771—Proximity effect correction using multiple exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Abstract

A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
PCT/US2012/025328 2011-02-28 2012-02-16 Method and system for design of enhanced patterns for charged particle beam lithography WO2012118621A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/037,270 US9057956B2 (en) 2011-02-28 2011-02-28 Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US13/037,270 2011-02-28
US13/037,268 US20120221980A1 (en) 2011-02-28 2011-02-28 Method and system for design of enhanced accuracy patterns for charged particle beam lithography
US13/037,268 2011-02-28

Publications (2)

Publication Number Publication Date
WO2012118621A2 WO2012118621A2 (en) 2012-09-07
WO2012118621A3 true WO2012118621A3 (en) 2012-11-08

Family

ID=46758423

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/025328 WO2012118621A2 (en) 2011-02-28 2012-02-16 Method and system for design of enhanced patterns for charged particle beam lithography

Country Status (1)

Country Link
WO (1) WO2012118621A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087046A (en) * 1997-04-16 2000-07-11 Nikon Corporation Methods for forming microlithographic masks that compensate for proximity effects
US6298473B1 (en) * 1998-06-29 2001-10-02 Mitsubishi Denki Kabushiki Kaisha Apparatus and method for inhibiting pattern distortions to correct pattern data in a semiconductor device
US20010028981A1 (en) * 2000-04-10 2001-10-11 Tomoyuki Okada Data processing apparatus, method and program product for compensating for photo proximity effect with reduced data amount, and photomask fabricated using same
US20100055586A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and system for forming circular patterns on a surface

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087046A (en) * 1997-04-16 2000-07-11 Nikon Corporation Methods for forming microlithographic masks that compensate for proximity effects
US6298473B1 (en) * 1998-06-29 2001-10-02 Mitsubishi Denki Kabushiki Kaisha Apparatus and method for inhibiting pattern distortions to correct pattern data in a semiconductor device
US20010028981A1 (en) * 2000-04-10 2001-10-11 Tomoyuki Okada Data processing apparatus, method and program product for compensating for photo proximity effect with reduced data amount, and photomask fabricated using same
US20100055586A1 (en) * 2008-09-01 2010-03-04 D2S, Inc. Method and system for forming circular patterns on a surface

Also Published As

Publication number Publication date
WO2012118621A2 (en) 2012-09-07

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