WO2012116657A1 - 推挽桥式磁电阻传感器 - Google Patents

推挽桥式磁电阻传感器 Download PDF

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Publication number
WO2012116657A1
WO2012116657A1 PCT/CN2012/071854 CN2012071854W WO2012116657A1 WO 2012116657 A1 WO2012116657 A1 WO 2012116657A1 CN 2012071854 W CN2012071854 W CN 2012071854W WO 2012116657 A1 WO2012116657 A1 WO 2012116657A1
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WIPO (PCT)
Prior art keywords
sensor
magnetoresistive
push
bridge
pull
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PCT/CN2012/071854
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English (en)
French (fr)
Inventor
迪克⋅詹姆斯·G
金英西
沈卫锋
王建国
薛松生
雷啸锋
张小军
李东风
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江苏多维科技有限公司
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Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to US14/002,733 priority Critical patent/US8872292B2/en
Priority to JP2013555738A priority patent/JP5965924B2/ja
Priority to EP12751762.1A priority patent/EP2682771B1/en
Publication of WO2012116657A1 publication Critical patent/WO2012116657A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball

Definitions

  • the present invention relates to the general field of detecting magnetic fields by means of magnetic tunnel junction (MTJ) or GMR (Giant Magnetoresitance) devices, and more particularly to integrating magnetic sensors into push-pull bridges using standard semiconductor packaging techniques The method in .
  • MTJ magnetic tunnel junction
  • GMR Gate Magnetoresitance
  • Magnetic sensors are widely used in modern measurement systems to measure or detect physical parameters including, but not limited to, magnetic field strength, current, position, movement, and direction.
  • magnetic field strength In the prior art, there have been many different types of sensors that have a magnetic field and other parameters.
  • these techniques have their own limitations, such as oversize, insufficient sensitivity and/or dynamic range, high cost, poor reliability, and other factors. Therefore, there is a need for an improved magnetic sensor, particularly a sensor that can be easily integrated with semiconductor devices and integrated circuits and their production methods.
  • Magnetic Junction (MTJ) sensors offer the advantages of high sensitivity, small size, low cost, and low power consumption.
  • the present invention provides a multi-chip push-pull bridge type magnetoresistive sensor using a magnetic tangential junction.
  • a push-pull bridge type magnetoresistive sensor which is a push-pull half-bridge magnetic field sensor, the sensor includes one or more pairs of MTJ or GMR magnetoresistive sensor chips, wherein each sensor has one sensor The chip is rotated 180 degrees relative to the other, and the sensor chip is a standard semiconductor package lead frame.
  • Each sensor chip includes an MTJ or GM: R_sensor element or a plurality of interconnects constituting a single magnetoresistive element.
  • the MTJ or GMR element has on its magnetoresistive transfer curve of a certain period linearly proportional to a resistance value of the external magnetic field: magnetoresistive sensor chip having a size substantially equal R H and a size substantially equal RL value, As used herein and elsewhere herein, "substantially equal in size” means that the difference is small, typically around 5% or less than 5%: the pads of the sensor chip are designed such that each of the magnetoresistive elements The side may have more than one bonding wire; the magnetoresistive chip is joined to each other by wires, and is connected to the lead frame through the lead wires to produce a push-pull half Sensor.
  • the intrinsic saturation field of each magnetoresistive sensor chip minus the bias magnetic field of the sensor chip transmission curve is greater than The maximum magnetic field to be measured by the bridge sensor.
  • the sensor chips are tested and sorted prior to assembly to better match their transmission characteristics.
  • the two half bridges are oriented 90 degrees relative to one another to create a dual axis magnetic field sensor.
  • the lead frame and the sensor chip are packaged in plastic to form a standard semiconductor package.
  • a push-pull bridge type magnetoresistive sensor which is a push-pull full-bridge magnetic field sensor
  • the sensor includes one or more pairs of the same MTJ or GMR magnetoresistive sensor chip, wherein each pair There is one sensor chip rotating relative to another chip] 80 degrees, the sensor chip is in a standard semiconductor package lead frame, each sensor chip is configured as a pair of magnetoresistive elements, and each magnetoresistive element is composed of one or more Composed of a series of GMR or MTJ elements, the MTJ or GMR element has a resistance value proportional to a magnetic field on a magnetoresistance transmission curve; the magnetoresistive sensor has a substantially equal size of R H and size Roughly equal R values; the pads of each sensor are designed such that more than one bond wire can be attached to each side of each magnetoresistive element; each magnetoresistive sensor chip has a crossover wire at the top and bottom layers, respectively, so the sensor The leads of the magnetoresistive elements on
  • bias field of the intrinsic saturation field of each magnetoresistive sensor chip minus the transmission curve is greater than the maximum magnetic field to be measured by the bridge sensor.
  • the sensors are tested and sorted prior to assembly to better match their transmission curve characteristics.
  • the leadframe and sensor chip are packaged in plastic to form a standard semiconductor package.
  • the two full bridges are oriented 90 degrees relative to each other to produce a two-axis magnetic field sensor.
  • each magnetoresistive sensor chip minus the bias magnetic field of the sensor chip transmission curve is greater than the maximum magnetic field to be traced by the bridge sensor.
  • the sensor chip is tested and sorted prior to assembly to better match its transmission curve characteristics.
  • the bow I-frame and sensor chip are packaged in plastic to form a standard semiconductor package.
  • the push-pull bridge magnetoresistive sensor provided by the present invention adopts a standard semiconductor package including at least one pair of MTJ sensor chips, one of which rotates 180 with respect to the other chip. degree.
  • the bias of the magnetoresistance response of each of the sensor chips is less than the maximum magnetic field to be measured, the combined bias of the MTJ sensor chip is eliminated, which in turn has a near-ideal response.
  • Figure 1 shows the magnetoresistance response curve of the spin-valve (GM:R_ and MTJ) sensing elements with the reference layer magnetization direction pointing in the negative ⁇ direction.
  • Figure 2 is a schematic diagram showing the magnetoresistance response curves of the spin-valve (GM:R_ and MTJ) sensing elements with the reference layer magnetization direction pointing in the positive H direction.
  • Figure 3 is a schematic view of a half bridge composed of a magnetoresistive sensor.
  • Figure 4 is a schematic diagram showing the output of R+ connected to the bias voltage Vb ; as , Rii connected to the ground push-pull half bridge.
  • Figure 5 is a schematic diagram of the output of a push-pull half-bridge with IL connected to bias voltage V bi3S and R ⁇ connected to ground.
  • Figure 6 is a diagram showing two magnetoresistive sensors pointing opposite each other and connected to each other as a half bridge sensor.
  • Figure 7 is a schematic diagram of two magnetoresistive chips placed in a standard semiconductor package to form a push-pull half bridge.
  • Figure 8 is a schematic diagram of a complete half-bridge sensor in a standard semiconductor package.
  • Figure 9 is a schematic diagram of a full bridge sensor composed of magnetoresistive elements.
  • Figure 10 is a schematic diagram showing the magnetic field output characteristics of a push-pull full-bridge magnetoresistive sensor.
  • Figure 11 is a schematic illustration of two magnetoresistive chips that can be positioned relative to one another and interconnected to form a push-pull full bridge.
  • Figure 12 is a schematic illustration of two magnetoresistive sensor chips placed in a standard semiconductor package to form a push-pull full bridge.
  • Figure 13 is a schematic illustration of a complete full bridge sensor in a standard semiconductor package.
  • FIG. 1 and 2 it is a general form of the magnetoresistance transmission characteristic curve of GMR and MTJ magnetic sensing elements suitable for linear magnetic field measurement.
  • the usual range of H0 values is 1 to 25 Oe, which is often referred to as "Orange-peei" or Ned coupling. This is related to the roughness of the ferromagnetic film in the GMR and ⁇ , ⁇ structures, and depends on the material and the puncturing process.
  • the transmission curves in Figures i and 2 are symmetrical to each other and they generally represent two different directions of the applied magnetic field relative to the sensing element.
  • -; -/- represents that the magnetization direction of the pinned layer is the same or opposite to the measurement direction, and the resistance of each sensor bridge arm can be written as -
  • the equation can be written in the form of a magnetoresistance variable 2 :
  • Equations 5 and 6 indicate that the sensitivity of the half-bridge output increases with increasing MR and decreases as the saturation field Hs decreases.
  • the outer linear interval in the half bridge is reduced from 2Hs to
  • sensor ffl acts as a linear sensor, but the linear magnetic field range is reduced. This behavior is ubiquitous for all push-pull full bridges if the bias of R+ and the sensing element are in opposite directions.
  • Hs of each magnetoresistive element is required.
  • the maximum value of the magnetic field interval that the sensor intends to measure and has the following relationship :
  • Hmax is the maximum magnetic field that the bridge sensor intends to measure.
  • Figure 6 shows one possible arrangement and design of a magnetoresistive sensor chip for a half bridge magnetic field sensor that is sensitive to magnetic fields along the axis 50.
  • the two sensor chips 51 and 52 are placed 180 degrees relative to each other, so their reference layers point in opposite directions, as indicated by the direction of the arrows in FIG.
  • the three terminals 55, 56, 57 of the right half bridge are used for electrical connection with Vb iaS , YANB, GND, respectively.
  • the sensor chip can include an array of MTJ or GMR components connected in series by wires in the interlayer to increase the resistance of the entire chip.
  • the sensor chips are connected to each other by leads 53.
  • the bond pads are designed such that one side of the magnetoresistive element 54 can have more than one pad.
  • Figure ⁇ is a possible lead diagram of a standard semiconductor package of a push-pull magnetoresistive sensor with sensors 57, 52 in opposite directions fixed to pins 67 on the lead frame and wire bonded to lead frame terminals 65, 66, 67. Then, it is packaged in plastic as shown in Fig. 8, and the lead frame terminals 65, 66, 67 form the connecting pins of the plastic package 68.
  • Figures 7 and 8 show only one of many possible package configurations.
  • the schematic of a full-bridge push-pull sensor is shown in Figure 9.
  • the sensor consists essentially of two half-bridges.
  • the two half-bridges VA H) and VB (H) are connected in parallel between the bias voltages Vbias70 and GND 71. Therefore, the sensor consists of four magnetoresistive elements, two R-resistors 75, 77, two R ten resistors 74, 76.
  • the response 80 is as shown in Figure i0.
  • the ''-finite magnetic field' between 80 and 82 on both sides of H 0, the output is linear and magnetic
  • the full-bridge output response V (H) 80 has a double voltage response; and the sensitivity to the response of the magnetic field H is twice. According to the magnetoresistance, it can express the following bias
  • FIG. 11 shows a layout of a full bridge formed by two sensor chips 91, 92 rotated 180 degrees from each other. Each sensor chip ff1 is configured for a magnetic resistor 94. Each of the magnetoresistors ff1 - one or more MTJ or GM: R_ sensing units.
  • Each of the magnetoresistive sensor chips has a cross-cord structure 95 on the top and bottom layers, respectively.
  • the leads of the magnetoresistive elements on each side of the sensor chip can be exchanged relative positions by the cross-conductor structure 95, allowing the two chips to be crossed without external leads 93.
  • the full bridge magnetic field sensor is primarily used to detect a magnetic field in the direction of the axis 90 that is collinear with the direction of the reference layer.
  • FIG. 12 illustrates one possible arrangement in which two sensor chips 91, 92 are attached to package leadframe 100.
  • the two sensor chips are bonded to pins V A 101, V B 102 , V Bias 104 and GND 105 via leads 103.
  • Figure 13 shows the leadframe and sensor core j ⁇ packaged in plastic: 03 to form a standard semiconductor package 110. If required, the sensor chip can be tested and sorted prior to packaging for better matching and better performance. This can be done by testing the wafer level of the sensor chip (Wafer Levei) and by classifying the original slices in different partitions. Therefore, the original sheets packaged together as shown in Figure 6 can be well matched.
  • Wafer Levei wafer level of the sensor chip

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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Description

推挽桥式磁电阻传感器
技术领域
本发明涉及通过磁性隧道结（MTJ, Magnetic Tunnel Junction)或 GMR( Giant Magnetoresitance) 器件检测磁场的一般领域， 更具体来说， 本发明涉及使用标准半导体封装技术将磁性传感器 集成到推挽式桥接器中的方法。
背景技术
磁性传感器广泛地应 ^于现代测量系统中， ^以测量或检测物理参数， 包括但不限于磁场强 度、 电流、 位置、 移动、 方向。 在现有技术中， 已存在许多] ¾于劉量磁场和其他参数的不同 类型的传感器。 但是， 在该技术中所熟知的是， 这些技术都具有各自的局限性， 例如， 尺寸 过大、 灵敏度和 /或动态范围不足、 成本高、 可靠性差和其他因素。 因此， 扔存在对改善型磁 性传感器的需求，特别是能容易与半导体器件和集成电路及其生产方法集成为一体的传感器。 磁性隨道结 （MTJ) 传感器具有高灵敏度、 小尺寸、 低成本、 低功耗的优点。 虽然 MTJ器件 可以与标准半导体制造工艺兼容， 但是还没有充分地幵发出一种用于建立对低成本生产具有 大批量的高灵敏度传感器的方法。尤其是，因 MTJ传感器的磁电阻响应偏移导致的产量问题， 以及当结合形成桥式传感器时， 匹配 MTJ元件的磁电阻响应已被证明存在很大困难。
发明内容
为克服现有技术中的上述问题， 本发明提供了一种采用磁性隨道结的多芯片推挽桥式磁电阻 传感器。
本发明一方面提供技术方案： 一种推挽桥式磁电阻传感器， 其为推挽式半桥磁场传感器， 该 传感器包括一或多对 MTJ或 GMR磁电阻传感器芯片， 其中每对中有一个传感器芯片相对另 -个旋转 180度，旦传感器芯片爾干一标准半导体封装引线框，每个传感器芯片包括一个 MTJ 或 GM:R_传感器元件或多个互相连接构成一单一磁电阻元件的多个 ΜΊΠ或 GMR传感器元件， 该 MTJ或 GMR元件具有在其磁电阻传输曲线上的某一段线性正比于外磁场的一电阻值： 磁 电阻传感器芯片具有大小大体相等的 RH和大小大体相等的 RL值， 这里以及本文中其它各处 所提及的 "大小大体相等"， 指的是差值很小， 一般在 5%左右或 5%以内： 传感器芯片的焊盘 经设计以使得在磁电阻元件的各侧可以^着一个以上的接合线； 磁电阻芯片通过引线相互接 合， 并通过引线与引线框连接 ， 以生产一推挽式半桥传感器。
迸一歩地， 每个磁电阻传感器芯片的内在饱和场减去该传感器芯片传输曲线的偏置磁场大于 该桥式传感器所要测量的最大磁场。
更进一步地， 传感器芯片在组装前经过测试并分拣以更好地匹配其传输特性曲线。
优选地， 两个半桥彼此相对 90度定向以产生一双轴磁场传感器。
进一歩地， 引线框和传感器芯片封装在塑料中以形成 ·标准半导体封装。
本发明另一方面提供技术方案： 一种推挽桥式磁电阻传感器， 其为推挽式全桥磁场传感器， 该传感器包括一或多对相同的 MTJ或 GMR磁电阻传感器芯片， 其中每对中有一个传感器芯 片相对另 ·个芯片旋转】80度， 旦传感器芯片 |^于一标准半导体封装引线框， 每个传感器芯 片经配置为一对磁电阻元件， 且每个磁电阻元件由一个或多个构成一串的 GMR或 MTJ元件 组成， MTJ或 GMR元件具有在其磁电阻传输曲线上的某一段线性正比于一夕卜磁场的一电阻 值； 磁电阻传感器具有大小大体相等的 RH和大小大体相等的 R 值； 每个传感器的焊盘经设 计使得在每一磁电阻元件的各侧可以附着一个以上接合线； 每个磁电阻传感器芯片具有一分 别位于顶层和底层的交叉导线， 因此传感器芯片的每一边磁电阻元件的引线可以交换相对位 置， 允许两个芯片在没有外部交叉引线的情况下连接成推挽式全桥传感器； 磁电阻传感器芯 片构成的全桥的输入和输出连接引线键合至引线框上。
进 ·步地， 每个磁电阻传感器芯片的内在饱和场减去传输曲线的偏置磁场大于该桥式传感器 所要测的最大磁场。
更进一步地， 传感器在组装前经过测试并分拣以更好地匹配其传输曲线特性。
优选地， 引线框和传感器芯片封装在塑料中以形成一个标准半导体封装。
迸一步地， 两个全桥彼此相对 90度定向以产生一个双轴磁场传感器。
更进 ·步地， 每个磁电阻传感器芯片的固有内部饱和场减去传感器芯片传输曲线的偏置磁场 后大于该桥式传感器所要溯量的最大磁场。
更进一步地， 传感器芯片在组装前经过测试和分拣以更好地匹配其传输曲线特性。
更进 ·步地， 弓 I线框和传感器芯片封装在塑料中以形成一标准半导体封装。
与现有技术相比， 本发明具有以下优点； 本发明所提供的推挽桥式磁电阻传感器采用标准的 半导体封装，其包括至少一对 MTJ传感器芯片，其中一个芯片相对另一个芯片旋转了 180度。 在这种布置中， 假定每一个 ΜΤ,ί传感器芯片的磁电阻响应的偏置小于意欲测量的最大磁场， MTJ传感器芯片的所结合偏置消除， 进而具有近乎理想的响应。
附图说明
图 1为参考层磁化方向指向负 Η方向的自旋阀 （GM:R_和 MTJ) 传感元件的磁电阻响应曲线 示意图。
图 2为参考层磁化方向指向正 H方向的自旋阀 （GM:R_和 MTJ) 传感元件的磁电阻响应曲线 示意图。
图 3为由磁电阻传感器构成的半桥示意图。
图 4为 R+连接到偏置电压 Vb;as, Rii接到地的推挽式半桥的输出示意图。
图 5为 IL连接到偏置电压 Vbi3S， R÷连接到地的推挽式半桥的输出示意图。
图 6为展示两个磁电阻传感器彼此相对指向， 且互相连接成一半桥传感器的图。
图 7为两个磁电阻芯片放置在一标准半导体封装内形成一个推挽式半桥的示意图。
图 8为在一标准半导体封装内的一个完整的半桥传感器示意图。
图 9为由磁电阻元件组成的全桥传感器示意图。
图 10为推挽式全桥磁电阻传感器的磁场输出特性示意图。
图 1 1为两个磁电阻芯片可彼此相对定位， 旦互相连接以形成一个推挽式全桥的示意图。 图 12为两个磁电阻传感器芯片放置在一标准半导体封装中以形成一个推挽式全桥的示意图。 图 13为在一标准半导体封装内的一个完整全桥传感器的示意图。
具体实施方式
下面结合 ^图对本发明的较佳实施倒进行详细阐述， 以使本发明的优点和特征更易于被本领 域技术人员理解， 从而对本发明的保护范围作出更为清除明确的界定。
如图 1、 2所示， 是适合于线性磁场测量的 GMR和 MTJ磁性传感元件的磁电阻传输特性曲线 的一般形式。 传输曲线显示， 传感器在饱和时分别显示出相对的低电阻值 和高电阻值 。 在饱和前的原点区域， 传输曲线显示的电阻随外磁场 H线性变化。 不理想情况下， 传输曲线 并不关于 H=0的原点对称。 饱和场 4、 5、 14、 15通常相对于 H0点有一定的偏置电压， 因此 低电阻时 的饱和场接近于 H=0的点。 H0值的通常的范围是 1到 25 Oe， 其常称为"柑橘 皮（Orange- peei ) "或奈耳（Ned )耦合。 这与 GMR和 ΜΤ、ί结构内的铁磁薄膜的粗糙度有关， 且取决于材料和刺造工艺。
图 i和图 2中的传输曲线相互对称，他们通常代表外加磁场相对于传感元件的两个不同方向。 这里， -;-/-代表钉扎层的磁化方向相对于测量方向相同或相反， 每个感应桥臂的电阻可以写成-
Figure imgf000005_0001
Figure imgf000006_0001
假定磁电阻元件 23(R-)和 24(R+)串联成如图 3所示的一个半桥， 并通过偏置电压 Vbias 20迸 行偏置， 则由与钉扎层反向的该两个感应桥臂组成的一个半桥的输出可 两个不同方式中的 一种写出， 取决于传感元件 23、 24中哪一个连接到地， 哪一个连接到 Vbias。 对于图 3, 半 桥响
Figure imgf000006_0002
在 Vb s和地
V,(H) + 1 ―、 (4)
Figure imgf000006_0003
差分半桥的传输曲线 30和 40如图 4和图 5所图示。 注意到， 在区间 35和 45, 其中半桥传感 器的响应与外磁场之间呈线性， 并关于 H=0， V=Vb s/2点 36、 46对称， 虽然事实上个别传 感元件并非关于》:::0点对称。 此外， 注意到线性区间 30和 40的范围小于每个个别传感元件 的传输曲线的线性区间 R+3和 R- 13。 方程可以写成以磁电阻为变量的形式 2 ：
假定磁电阻表达为： MR = (RH- L)/RL, 贝 i
+ 1 ！ (5)
(HS ~H0)+(2/MR)HI 、 L ,
以上方程仅在线性区间 35、 45成立。
注意到， 响应电压与偏置电压的极性相关， 分别如点 36、 46中相对原点偏差 Vb s/2 。 方程 5和 6预示着半桥输出的灵敏度随着 MR的增加而增加， 随着饱和场 Hs的减小而减小。 半桥中的外部的线性区间被从 2Hs减小为
( 7) 在 HO小于 Hs的情况 T, 传感器 ffl作一个线性传感器， 但是线性磁场范围减小。 如果 R+和 传感元件的偏置为相反方向， 则这种行为对于所有推挽式全桥来说是普遍存在的。
为了保证半桥在所需要的线性区间范围内具有良好的线性， 因此需要每个磁电阻元件的 Hs 感器意欲测量的磁场区间的最大值， 并具有如下关系:
(8)
此处， Hmax是桥传感器意欲测量的最大磁场。
图 6展示用于半桥磁场传感器的磁电阻传感器芯片的一种可能的布置和设计， 该半桥磁场传 感器沿轴 50对磁场敏感。 此处， 两个传感器芯片 51和 52相对旋转 180度放置， 因此它们的 参考层指向相反的方向， 如图 6中箭头方向所示。 右边半桥的三个终端 55、 56、 57用于分别 与 VbiaS、 YANB, GND进行电气连接。 传感器芯片可包含用夹层中导线串联起来的一个阵 列的 MTJ或 GMR元件以增加整个芯片的电阻。传感器芯片通过引线 53互相连接。接合焊盘 经设计使得磁电阻元件 54的一侧可具有一个以上焊盘。
图 Ί是推挽式磁电阻传感器的标准半导体封装的一种可能的引线图， 相反方向的传感器 51、 52固定在引线框上的引脚 67, 并引线键合至引线框端子 65、 66、 67。 然后， 如图 8所示封装 在塑料中， 且引线框端子 65、 66、 67形成塑料封装 68的连接销。 图 7、 图 8仅仅表示多种可 能封装配置中的一种。
一全桥推挽式传感器的原理图如 9所示，该传感器实质上由两个半桥组成，两个半桥 VA H)、 VB (H) 并联在偏置电压 Vbias70 和 GND 71之间。 因此该传感器由四个磁电阻元件组成, 两个 R—电阻 75、 77, 两个 R十电阻 74、 76.
因此， 全桥的输出为：
V(H)^VA(H)-VB(H) (9)
响应 80如图 i0所示。 在 H=0两边的 80和 82之间的 \ '-有限磁场范 ί簡， 输出为线性的且与 磁
Figure imgf000007_0001
与半桥的输出响应 30和 40 不同， 全桥输出响应 V (H) 80的电压响应是双; 并且对 磁场 H的响应的灵敏度是其两倍。 根据磁电阻其可表达如下 bias
-II (11)
(Hs -H0 }+{2/A 与半桥传感器相同， 全桥的灵敏度随着 MR的增加而提高， ϋ该灵敏度随 HS增加而降低。 对于 MR值远大干 (Hs- Ho)/(2Hs)的情況， 响应灵敏度增加变得不明显。 该点对应的 MR值现 在为 >500%。 图 11展示了由两个传感器芯片 91、 92相互旋转 180度构成一全桥的布置图。 每个传感器芯 片 ffl—对磁电阻 94构成。每一个磁电阻 ffl—串一或多个 MTJ或 GM:R_传感单元构成。每个磁 电阻传感器芯片具有一分别位于顶层和底层的交叉导线结构 95传感器芯片的每一边磁电阻元 件的引线可以通过交叉导线结构 95交换相对位置， 允许两个芯片在没有外部引线 93在不交 叉的情况下连接成推挽式全桥传感器。 该全桥磁场传感器主要用来检测沿与参考层方向共线 的轴 90方向的磁场。
图 12展示了两个传感器芯片 91、 92固定在封装引线框 100上的一种可能的布置方式。 两个 传感器芯片通过引线 103键合到引脚 VA 101、 VB 102 , VBias 104和 GND 105。
图 13所示是将引线框和传感器芯 j†封装在塑料 : 03中以形成一个标准半导体封装 110。 如果 需要， 传感器芯片可以在封装之前进行测试和分拣以更好的匹配和获得更好的性能。 这可以 通过传感器芯片的硅片级 （Wafer Levei) 測试和对不同分区中的原片迸行分类来实现。 因此 如图 6中封装在一起的原片能够很好的匹配。
以上对本发明的特定实施例进行了说明， 但本发明的保护内容不仅仅限定于以上实施例， 在 本发明的所属技术领域中， 只要掌握通常知识， 就可以在其技术要旨范围内进行多种多样的 变更。

Claims

权利要求：
1. 一种推挽桥式磁电阻传感器， 其为推挽式半桥磁场传感器， 其特征在于： 该传 感器包括 一或多对 MTJ或 GMR磁电阻传感器芯片，其中每对中有一个传感 器芯片呈相对另一个旋转 180度的排布， 且传感器芯片附于一标准半导体封 装引线框， 每个传感器芯片包括一个 MTJ或 GMR传感器元件或多个互相连 接构成一单一磁电阻元件的多个 MT J或 GMR传感器元件， 该 MT J或 GMR 元件具有在其磁电阻传输曲线上的某一段线性正比于外磁场的一电阻值； 磁 电阻传感器芯片具有大小大体相同的的 RH和大小大体相同的 值； 传感器芯片 的焊盘经设计以使得在磁电阻元件的各侧可以附着一个以上的接合线； 磁电 阻芯片通过引线相互接合， 并通过引线与引线框连接， 以形成一推挽式半桥 传感器。
2. 如权利要求 ί所述的推挽桥式磁电阻传感器， 其中每个磁电阻传感器芯片的 内在饱和场减去该传感器芯片传输曲线的偏置磁场大于桥式传感器所要测量 的最大磁场。
3. 如权利要求 2所述的推挽桥式磁电阻传感器， 其中， 传感器芯片在组装前 经过测试并分拣， 以更好地匹配其传输特性曲线。
4. 如权利要求 3所述的推挽挢式磁电阻传感器， 其中， 两个半桥彼此相对 90 度定向以产生一双轴磁场传感器。
5. 如权利要求 1所述的推挽桥式磁电阻传感器， 其中， 引线框和传感器芯片 封装在塑料中以形成一标准半导体封装。
6. 一种推挽桥式磁电阻传感器， 其为推挽式全挢磁场传感器， 其特征在于： 所述 传感器包括一或多对相同的 MT J或 GMR磁电阻传感器芯片， 其中每对中有 一个传感器芯片呈相对另一个芯片旋转 1 80度的排布， 且传感器芯片附于一 标准半导体封装引线框， 每个传感器芯片设置为一对磁电阻元件， 且每个磁 电阻元件由一个或多个相串联的 GMR或 MT J元件组成， 该 MT J或 GMR元 件具有在其磁电阻传输曲线上的某一段线性正比 ·ΐ… 外磁场的一电阻值； 磁 电阻传感器具有大小大体相同的 RH和大小大体相同的 RL值； 每个传感器的焊盘 经设计使得在每一磁电阻元件的各侧可以跗着一个以上接合线； 每个磁电阻 传感器芯片具有一分别位于顶层和底层的交叉导线， 传感器芯片的每一边磁 电阻元件的引线可以交换相对位置， 允许两个芯片在没有外部交叉引线的情 ¾下连接成推挽式全桥传感器； 磁电阻传感器芯片构成的全桥的输入和输出 连接引线键合至引线框上。
7. 如权利要求 6所述的推挽桥式磁电阻传感器， 其中每个磁电阻传感器芯片 的内在饱和场减去传输曲线的僱置磁场大于该桥式传感器所要测的最大磁 场。
8, 如权利要求 7所述的推挽桥式磁电阻传感器， 其中传感器在组装前经过测 试并分拣以更好地匹配其传输曲线特性。
9. 如权利要求 8所述的推挽桥式磁电阻传感器， 其中引线框和传感器芯片封 装在塑料中以形成一个标准半导体封装。
10。 如权利要求 6所述的推挽桥式磁电阻传感器， 其中两个全挢彼此相对 90 度定向以产生一个双轴磁场传感器。
Π , 如权利要求 10 .所述的推挽桥式磁电阻传感器， 其中每个磁电阻传感器芯 片的固有内部饱和场减去传感器芯片传输曲线的偏置磁场后大于该桥式传感 器所要测量的最大磁场。
12。 如权利要求 11所述的推挽桥式磁电阻传感器， 其中传感器芯片在组装前 经过测试和分拣以更好地匹配其传输曲线特性。
13. 如权利要求 12所述的推挽桥式磁电阻传感器， 其中引线框和传感器芯片 封装在塑料中以形成一标准半导体封装。
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CN102298125A (zh) 2011-12-28
CN202230192U (zh) 2012-05-23
EP2682771A1 (en) 2014-01-08
EP2682771B1 (en) 2019-02-13
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US8872292B2 (en) 2014-10-28
US20140203384A1 (en) 2014-07-24

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