WO2012094892A2 - 一种返回式电流复用混频器 - Google Patents

一种返回式电流复用混频器 Download PDF

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WO2012094892A2
WO2012094892A2 PCT/CN2011/078565 CN2011078565W WO2012094892A2 WO 2012094892 A2 WO2012094892 A2 WO 2012094892A2 CN 2011078565 W CN2011078565 W CN 2011078565W WO 2012094892 A2 WO2012094892 A2 WO 2012094892A2
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drain
stage
transconductance
output
gate
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PCT/CN2011/078565
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French (fr)
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WO2012094892A3 (zh
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吴建辉
陈超
李红
时龙兴
王子轩
孙杰
叶至易
张萌
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东南大学
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Priority to US13/978,864 priority Critical patent/US8766698B2/en
Publication of WO2012094892A2 publication Critical patent/WO2012094892A2/zh
Publication of WO2012094892A3 publication Critical patent/WO2012094892A3/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors

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  • the present invention relates to a return current multiplex mixer comprising a transconductance/amplification stage and a mixing stage.
  • the RF signal is down-converted to the intermediate frequency signal via the transconductance stage and the mixing stage, and is again fed to the transconductance stage for intermediate frequency amplification; after first-order low-pass filtering, the output is output.
  • the mixer simultaneously amplifies the input RF signal and the output IF signal at the transconductance stage.
  • the low-pass/high-pass filter network is used to couple and isolate the RF/IF signal.
  • the structure has the characteristics of saving power consumption, saving circuit structure and high conversion gain, and is suitable for a low-power, low-cost constant envelope communication standard.
  • the return circuit is based on a regenerative circuit.
  • Regenerative circuit technology first appeared in early tube radios, and because of the expensive price of tubes at the time, radio designers began to seek to build the entire radio with the fewest tubes.
  • American Edwin Armstrong invented the regenerative circuit, making the realization of a single-tube radio possible.
  • the principle of the regenerative circuit is: the broadcast RF signal is outputted with the amplified RF signal and the demodulated audio signal under the amplification and nonlinear action of the tube, and a part of the signal is sent to the input end of the tube again by using positive feedback technology. Amplification is performed such that an oscillation of the input signal is formed at the input end of the tube, and the input RF signal is "regenerated".
  • the oscillation process is not destined to be an endless oscillation.
  • the oscillation signal is automatically “reset” every other short time, so that it starts to oscillate and maintain oscillation according to the input signal. Track the input signal and regenerate the input signal at any time. All in all, the regenerative circuit allows it to be in an intermittent, unsteady state, and in many cases the function of the radio is achieved with just one tube.
  • the regenerative circuit breaks the law of constant gain-bandwidth product in the first-order approximation system and increases the equivalent Q value of the receiving circuit.
  • the elimination of the IF amplifier tube reduces the cost of the radio, and at the same time saves power consumption, although how to reduce power consumption is not at the attention of the time.
  • early regenerative circuits also faced a series of problems, such as: in the absence of an input signal, the circuit will infinitely amplify the noise, making the speaker emit a noisy sound; the oscillating signal will be emitted to interfere with other The radio; the regulation of the regenerative circuit needs to have a certain circuit base, poor frequency selectivity and so on.
  • the regenerative circuit was born in an era of crazy saving of tubes. Although the performance is not satisfactory, its design idea has opened up a unique idea for circuit designers.
  • the positive feedback of the regenerative circuit is the main reason for its various shortcomings, but its full utilization of the amplification tube has inspired future generations.
  • the prototype of the return structure was proposed, that is, the input high frequency signal and the demodulated output intermediate frequency signal use the same amplification stage.
  • the RF signal and the IF signal are simultaneously isolated using a high-pass and low-pass filter network.
  • the maximum frequency of short-wave audio broadcasting at that time was only a few megahertz to several tens of megahertz, which was two to three orders of magnitude different from the output audio.
  • the isolation between the radio frequency and the output intermediate frequency was poor, and they interfered with each other, and the listening sound quality was poor.
  • the cost of tubes has dropped dramatically, and radios with superheterodyne structures have become popular, compared to the cost advantages of regenerative and return-type structures, which have been discontinued for a long time. Forgotten.
  • Today's RF communication circuits have a carrier frequency of up to 2-5 GHz and an output intermediate frequency usually in the range of 2-10 MHz.
  • a simple first-order passive filtering network can effectively isolate the RF signal and the IF signal.
  • the RF/IF gain multiplexing concept of the return circuit provides a way to reduce power consumption.
  • the invention integrates the related ideas of the regenerative return circuit which has been forgotten into the design of today's integrated circuits, and constructs a new low-power return type mixer.
  • the object of the present invention is to provide a return type low power mixer, which uses current multiplexing technology for the transconductance stage, and the input RF and output intermediate frequency signals share the same transconductance amplification stage, which saves power consumption. It saves the circuit structure and high conversion gain.
  • a conventional mixer mainly includes three modules of a transconductance stage, a mixing stage, and a low-pass filter stage which are sequentially connected.
  • the RF signal is converted into an RF current through the transconductance stage, and the current generates a down-converted signal at the intermediate frequency, an input feedthrough signal at the radio frequency, and an up-converted signal at the output through the modulation of the mixing stage.
  • the feedthrough signal and the up-converted signal are filtered out, and a pure down-converted signal is obtained at the output.
  • a return type current multiplexing mixer includes a transconductance/amplifier stage and a mixing stage connected in sequence, and a transconductance amplification stage amplifies an input radio frequency signal, and the amplified radio frequency signal generates an output intermediate frequency signal through a mixing stage; the intermediate frequency The signal is sent to the input of the transconductance/amplifier stage again, amplified by the transconductance/amplification stage, and then output as the final intermediate frequency signal;
  • the high-pass filter network is connected between the transconductance/amplifier stage and the mixing stage to block the intermediate frequency signal;
  • the low-pass filter network is connected between the output stage of the mixing stage and the transconductance/amplifier stage to block the radio frequency signal;
  • the transconductance/amplifier stage adopts a current multiplexing structure, and also serves as a transconductance stage of the radio frequency and an amplification stage of the intermediate frequency.
  • the transconductance/amplification stage includes: PMOS transistors PM0 and PM3; NMOS transistors NM0 and NM1; capacitors C0 and C1; capacitors C2 and C3; resistors R1, R2, R3, and R4;
  • PM0, NM0, PM3 and NM1 form a current multiplexing transconductance stage; NM0 and NM1 simultaneously serve as an amplification tube for outputting an intermediate frequency signal, and the final output signal is output from the drains of NM0 and NM1;
  • the mixing stage includes: double balanced switches PM4, PM5, PM6 and PM7; PMOS tubes PM1 and PM2 used as bias tubes; PM4 to PM7 form a mixing core circuit, current bias is provided by PM1 and PM2; Mixed load NMOS transistors NM2 and NM3;
  • the DC bias voltage across the transconductance stage is provided by the gate voltages of NM2 and NM3; the RF coupling capacitors C4 and C5 are connected between the transconductance stage and the mixing stage as a high-pass filter network to couple the RF signal to isolate the final intermediate frequency.
  • the low pass filtering network includes C6, R5, C7, C9 and R6, C8, C10 for coupling the intermediate frequency signal output from the mixing stage to the transconductance/amplifying stage, and isolating the radio frequency signal output from the mixing stage;
  • the upper plates of capacitors C0 and C1 are connected to the positive input signal terminal, the lower plate of C1 is connected to the gate of PM0, the lower plate of C0 is connected to the gate of NM0, and the upper plate of capacitors C2 and C3 is connected to the positive input signal terminal.
  • the lower plate of C3 is connected to the gate of PM3; the lower plate of C2 is connected to the gate of NM1;
  • the source of PM0 is connected to the power supply voltage, and the drain is connected to the drain of NM0.
  • the positive terminal of resistor R1 is connected to the gate of PM0, the negative terminal is connected to the positive terminal of resistor R2, the negative terminal of R2 is connected to the drain of PM0, and the source of PM3 is connected.
  • the power supply voltage is connected to the drain of NM1.
  • the positive terminal of resistor R3 is connected to the gate of PM3, the negative terminal is connected to the positive terminal of R4, and the negative terminal of R4 is connected to the drain of PM3.
  • the negative terminal of R1 is simultaneously connected with the negative terminal of R3. Connected to the upper plate of capacitor C12, the lower plate of C12 is grounded;
  • the drains of NM0 and NM1 are grounded; the source terminals of PM1 and PM2 are connected to the power supply voltage, the gate is connected to the current mirror gate voltage; the sources of PM4 and PM5 are connected to the drain of PM1, and the sources of PM6 and PM7 are connected to the drain of PM2.
  • the local oscillator signal is positively terminated to the gates of PM5 and PM6, and the negative terminal of the local oscillator signal is connected to the gates of PM4 and PM7;
  • the source of NM2 and NM3 is grounded, the gate is connected to the upper plate of capacitor C11, the lower plate of capacitor C11 is grounded; the drain of NM2 is connected to the drain of PM4 and PM6; the drain of NM3 is connected to the drain of PM5 and PM6;
  • the upper plate of capacitor C4 is connected to the drain of PM0, the lower plate is connected to the drain of PM1; the upper plate of capacitor C5 is connected to the drain of PM3, the lower plate is connected to the drain of PM2; the positive terminal of resistor R7 is connected to NM2.
  • the drain is negatively connected to the gate of NM2; the positive terminal of R8 is connected to the drain of NM3, and the negative terminal is connected to the gate of NM3; the capacitor C6 is connected between the positive terminal of R7 and the positive terminal of R8;
  • the plate is connected to the drain of NM2, and the lower plate is grounded; the upper plate of capacitor C10 is connected to the drain of NM3, and the lower plate is grounded; the positive terminal of resistor R5 is connected to the drain of NM2, and the negative terminal is connected to the gate and capacitor of NM0.
  • the upper plate of C7, the lower plate of C7 is grounded; the positive terminal of resistor R6 is connected to the drain of NM3, the negative terminal is connected to the gate of NM1 and the upper plate of capacitor C8, and the lower plate of C8 is grounded;
  • the positive terminal of R9 is connected to output node 1, the negative terminal of R9 is the positive terminal of intermediate frequency output, the upper plate of capacitor C13 is connected, the lower plate of C13 is grounded; the positive terminal of R10 is connected to output node 2, and the negative terminal of R10 is intermediate frequency.
  • the output negative pole is connected to the upper plate of capacitor C14, and the lower plate of C14 is grounded; output node 1 is at the negative terminal of resistor R2, and output node 2 is at the negative terminal of resistor R4.
  • the return mixer of the present invention is shown in Figure 1b.
  • a high-pass filter network is connected in series between the transconductance stage and the mixing stage, and the mixing stage output is coupled to the transconductance/amplifier stage after being connected to the low-pass filter network. After being amplified by the transconductance/amplification stage, it is output.
  • the transconductance/amplifier stage is a current multiplexed transconductance stage for the input RF signal and acts as an IF amplifier for the output IF signal. From the physical structure, the output of the mixing stage is connected to the input of the transconductance/amplifier stage to form a loop.
  • the mixer structure of the present invention is shown in FIG. 2, which is an input-output fully differential structure.
  • the transconductance differential terminals are composed of PM0, NM0, and PM3, NM1, respectively.
  • the input RF signal is simultaneously coupled to the gate of the PMOS transistor and the gate of the NMOS transistor through a capacitor.
  • the RF current generated by the transconductance stage is coupled to the local oscillator stage through small capacitors C4 and C5.
  • the capacitor can be fully fed to the RF signal, and is approximately open for the IF signal, blocking the IF signal before the mixing stage.
  • the mixing stage is biased separately from the transconductance stage, which facilitates the use of a lower bias current for the mixing stage to improve the noise figure of the mixer.
  • the converted signal is output from the drains of the NM2 and NM3 tubes, and is filtered by the first-order low-pass filter to add RF signals to the gates of NM0 and NM1.
  • the final intermediate frequency output is formed at the drains of NM0 and NM1.
  • Figure 4 shows the conversion gain at the output of the mixing stage (bottom) and the conversion gain at the output of the transconductance amplifier (top) as a function of the input frequency; where the local oscillator frequency is 2.45 GHz; it is clear from the figure With the addition of a return-type structure, the conversion gain is increased by more than 20 dB under the same power consumption and active device conditions.
  • the mixer comprises a transconductance amplifier stage and a mixing stage, and a high-pass and low-pass filter network;
  • the transconductance amplifier stage is a current-multiplexed CMOS structure, converts the input RF signal into an RF current, and removes the low-frequency component through the high-pass filter network.
  • the output IF signal is generated by the modulation of the mixing stage.
  • the IF signal is removed from the high-frequency component through the low-pass filter network and sent to the input transconductance amplifier stage.
  • the transconductance amplifier stage is amplified and output.
  • the mixer cross-lead stage uses current multiplexing technology and inputs RF and The output intermediate frequency signals share the same transconductance amplification stage, which has the characteristics of saving power consumption, saving circuit structure and high conversion gain.
  • Figure 1a is a block diagram of a conventional mixer module
  • 1b is a block diagram of a return type current multiplexing mixer module of the present invention.
  • FIG. 2 is a schematic circuit diagram of a return type current multiplexing mixer of the present invention
  • 3 is an internal loop gain curve of the return type current multiplexing mixer of the present invention over the entire spectrum
  • Figure 4 is the conversion gain of the output stage of the mixing stage (bottom) and the conversion gain of the output of the transconductance amplifier stage (top) as a function of the input frequency; wherein the local oscillator frequency is 2.45 GHz;
  • Figure 5 shows the input RF signal waveform (light curve), the mixer stage output waveform (smaller amplitude low frequency sine wave) and the transconductance/amplifier stage output IF signal waveform (large amplitude low frequency sine wave).
  • the main structure of the return type current multiplexing mixer of the present invention is mainly composed of modules such as a transconductance/amplifier stage, a mixing stage, a bias circuit, and a filter network.
  • the transconductance/amplification stage includes a P-type metal oxide field effect transistor (hereinafter referred to as a PMOS transistor) PM0, PM3, and an N-type metal oxide field effect transistor (hereinafter referred to as an NMOS transistor) NM0 and NM1.
  • PM0, NM0, and PM3, NM1 form a current multiplexing transconductance stage.
  • NM0 and NM1 are simultaneously used as an amplifier for outputting the intermediate frequency signal, and the final output signal is output from the drains of NM0 and NM1.
  • the double balanced switch PM4-PM7 acts as a mixing core circuit and is biased by biasing tubes PM1 and PM2.
  • the DC bias voltage across the transconductance stage is provided by the gate voltages of the mixing load tubes NM2 and NM3.
  • Capacitors C4 and C5 are connected between the transconductance stage and the mixing stage to couple the RF signal and isolate the IF output signal.
  • C6, R5, C7, C9 and R6, C8, C10 form a low-pass filter network for coupling the IF signal from the mixing stage output to the transconductance/amplifier stage and isolating the RF signal output from the mixing stage.
  • the upper plates of capacitors C0 and C1 are connected to the positive input signal terminal, the lower plate of C1 is connected to the gate of PM0, the lower plate of C0 is connected to the gate of NM0, and the upper plate of capacitors C2 and C3 is connected to the positive input signal terminal.
  • the lower plate of C3 is connected to the gate of PM3; the lower plate of C2 is connected to the gate of NM1; the source of PM0 is connected to the power supply voltage, the drain is connected to the drain of NM0; the positive terminal of resistor R1 is connected to the gate of PM0, and the negative terminal is connected.
  • the positive terminal of resistor R2 and the negative terminal of R2 are connected to the drain of PM0.
  • the source of PM3 is connected to the power supply voltage, and the drain is connected to the drain of NM1.
  • the positive terminal of the resistor R3 is connected to the gate of PM3, the negative terminal is connected to the positive terminal of R4, and the negative terminal of R4 is connected to the drain of PM3.
  • the negative terminal of R1 and the negative terminal of R3 are simultaneously connected to the upper plate of capacitor C12, and the lower plate of C12 is grounded.
  • the drains of NM0 and NM1 are grounded.
  • the source terminals of PM1 and PM2 are connected to the power supply voltage, and the gate is connected to the current mirror gate voltage.
  • the sources of PM4 and PM5 are connected to the drain of PM1, the sources of PM6 and PM7 are connected to the drain of PM2, the local oscillator signal is positively connected to the gates of PM5 and PM6, and the negative terminal of the local oscillator signal is connected to the gates of PM4 and PM7.
  • the sources of NM2 and NM3 are grounded, the gate is connected to the upper plate of capacitor C11, and the lower plate of capacitor C11 is grounded.
  • the drain of NM2 is connected to the drains of PM4 and PM6; the drain of NM3 is connected to the drains of PM5 and PM6.
  • the upper plate of the RF coupling capacitor C4 is connected to the drain of PM0, the lower plate is connected to the drain of PM1; the upper plate of the RF coupling capacitor C5 is connected to the drain of PM3, and the lower plate is connected to the drain of PM2; Terminate the drain of NM2 and negatively connect the gate of NM2.
  • the positive terminal of R8 is connected to the drain of NM3, and the negative terminal is connected to the gate of NM3.
  • Capacitor C6 is connected across the positive terminal of R7 and the positive terminal of R8.
  • the upper plate of the capacitor C9 is connected to the drain of the NM2, and the lower plate is grounded.
  • the upper plate of the capacitor C10 is connected to the drain of the NM3, and the lower plate is grounded.
  • the positive terminal of the resistor R5 is connected to the drain of the NM2, the negative terminal is connected to the gate of the NM0 and the upper plate of the capacitor C7, and the lower plate of the C7 is grounded.
  • the positive terminal of the resistor R6 is connected to the drain of the NM3, the negative terminal is connected to the gate of the NM1 and the upper plate of the capacitor C8, and the lower plate of the C8 is grounded.
  • the positive terminal of R9 is connected to the output node 1, and the negative terminal of R9 is the positive terminal of the intermediate frequency output.
  • the upper plate of the capacitor C13 is connected, and the lower plate of C13 is grounded.
  • the positive terminal of R10 is connected to the output node 2.
  • the negative terminal of R10 is the negative terminal of the intermediate frequency output. It is connected to the upper plate of capacitor C14 and the lower plate of C14 is grounded.

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Description

一种返回式电流复用混频器 技术领域
本发明涉及一种返回式电流复用混频器，该混频器包含跨导/放大级和混频级。射频信号经跨导级和混频级下变频至中频信号，再次馈送至跨导级进行中频放大；经过一阶低通滤波后输出。该混频器跨导级同时放大输入射频信号和输出中频信号，为了保证电路稳定性，使用低通/高通滤波网络对射频/中频信号进行耦合和隔离。该结构具有节约功耗、节约电路结构、转换增益高的特点，适用于低功耗、低成本的恒包络通信标准。
 背景技术
返回式电路是基于再生式电路基础之上的。再生式电路技术最早出现在早期的电子管收音机中，由于当时电子管昂贵的价格，使得无线电设计人员开始寻求用最少的电子管来构建整个收音机。美国人埃德温•阿姆斯特朗发明了再生式电路，使得单管收音机的实现成为了可能。再生式电路的原理是：广播射频信号在电子管的放大及非线性作用下，输出含有放大的射频信号和解调后的音频信号，使用正反馈技术使得该信号一部分被再次送至电子管的输入端进行放大，这样在电子管的输入端形成输入信号的振荡现象，“再生”了输入射频信号。由于振荡将趋于饱和，因此对不同强度的输入信号而言，最终振荡的幅度是固定的，输出的解调后的音频信号幅度也固定；对不同强度的电台其收听音量几乎相同，省去了音量调节的过程。需要注意的是，该振荡过程注定不能是无休止的振荡，在电路中，每隔一个很短的时间会自动“复位”该振荡信号，使得其重新根据输入信号进行起振和维持振荡，以随时跟踪输入信号并再生该输入信号。总而言之，再生式电路允许其处于间歇式的非稳定状态，很多情况下只是用一个管子就实现了收音机的功能。再生式电路打破了在一阶近似系统下增益带宽积恒定的规律，增大了接收电路等效Q值。省去了中频放大管降低了收音机成本，同时也顺便节省了功耗，尽管如何降低功耗当时并不受人们关注。然而，早期的再生式电路同时也面临着一系列的问题，如：在无输入信号的情况下，该电路会无限放大噪声，使得扬声器发出滋滋的声音；振荡后的信号会发射出去干扰其他的收音机；再生式电路的调节需要具备一定的电路功底，频率选择性不佳等。 再生式电路诞生在一个疯狂节约管子数量的时代，虽然性能上差强人意，但是其设计思想给电路设计者开辟了一种独特的思路。
再生式电路的正反馈是导致其种种不足的主要原因，但是其对放大管的充分利用给了后人启发。在随后的若干年里，有人提出了返回式结构的雏形，即输入高频信号与解调输出后的中频信号使用同一个放大级。为了避免正反馈的出现，对射频信号和中频信号同时使用高通和低通滤波网络进行隔离。然而，当时的短波音频广播最大频率只有几兆到几十兆赫兹，与输出音频相差不过2到3个数量级，射频与输出中频之间的隔离效果差，彼此之间互相干扰，收听音质不佳。随着晶体管技术的出现和发展，管子的成本大幅度下降，超外差结构的收音机开始普及，相比之下再生式结构和返回式结构的成本优势已经不再，在很长的一段时间里被人遗忘了。
如今的射频通讯电路，其载波频率高达2-5GHz，输出中频通常在2-10MHz范围内。简单的一阶无源滤波网络就可以实现对射频信号和中频信号进行有效隔离。 随着便携式通讯工具和无线传感网络的广泛应用，如何显著降低功耗增加电池使用时间成为设计人员不断追求的目标。而返回式电路的射频/中频增益复用概念正好为降低功耗提供了途径。本发明正是将已被人遗忘的再生返回式电路的相关思想，融合进当今集成电路的设计中去，构建出一种新的低功耗返回式混频器。
 技术问题
本发明的目的在于提供一种返回式低功耗混频器，该混频器跨导级使用了电流复用技术，且输入射频和输出中频信号共用同一个跨导放大级，具有节约功耗、节约电路结构、转换增益高的特点。
 技术解决方案
本发明目的通过以下方法实现：如图1a所示，常规的混频器主要包含依次连接的跨导级、混频级、低通滤波级三个模块。射频信号通过跨导级转换成射频电流，该电流通过混频级的调制作用在输出端产生位于中频的下变频信号、位于射频的输入馈通信号以及上变频信号。上述信号在通过低通滤波网络之后，馈通信号与上变频信号被滤除掉，在输出端得到纯净的下变频信号。
一种返回式电流复用混频器，包括依次连接的跨导/放大级和混频级，跨导放大级放大输入射频信号，放大后的射频信号经过混频级产生输出中频信号；该中频信号被再次送到跨导/放大级的输入端，经跨导/放大级放大后，再作为最终的中频信号输出；
在跨导/放大级与混频级之间串联高通滤波网络对中频信号进行阻隔；在混频级输出端与跨导/放大级之间串联低通滤波网络对射频信号进行阻隔；
所述跨导/放大级采用电流复用结构，兼做射频的跨导级和中频的放大级。
具体来说，所述跨导/放大级包括：PMOS管PM0和PM3；NMOS管NM0和NM1；电容C0和C1；电容C2和C3；电阻R1、R2、R3和R4；
PM0、NM0、PM3和NM1构成电流复用跨导级；NM0和NM1同时作为输出中频信号的放大管，最终输出信号从NM0，NM1的漏极输出；
所述混频级包括：双平衡开关PM4、PM5、PM6和PM7；用作偏置管的PMOS管PM1和PM2；PM4～PM7构成混频核心电路，由PM1和PM2提供电流偏置；用作混频负载的NMOS管NM2和NM3；
跨导级的直流偏置电压由NM2和NM3的栅极电压提供；在跨导级和混频级之间连接射频耦合电容C4和C5作为高通滤波网络，用以耦合射频信号，隔离最终的中频信号输出；
所述低通滤波网络包括C6、R5、C7、C9以及R6、C8、C10，用以耦合自混频级输出的中频信号至跨导/放大级，并且隔离自混频级输出的射频信号；
电容C0、C1的上极板接正输入信号端，C1的下极板接PM0的栅极；C0的下极板接NM0的栅极；电容C2、C3的上极板接正输入信号端，C3的下极板接PM3的栅极；C2的下极板接NM1的栅极；
PM0的源极接电源电压，漏极接NM0的漏极；电阻R1正端接PM0的栅极，负端接电阻R2的正端，R2的负端接PM0的漏极；PM3的源极接电源电压，漏极接NM1的漏极；电阻R3的正端接PM3的栅极，负端接R4的正端，R4的负端接PM3的漏极；R1的负端与R3的负端同时接到电容C12的上极板，C12的下极板接地；
NM0和NM1的漏极接地；PM1和PM2的源端接电源电压，栅极接电流镜栅极电压；PM4、PM5的源极接PM1的漏极，PM6、PM7的源极接PM2的漏极；本振信号正端接PM5和PM6的栅极，本振信号负端接PM4和PM7的栅极；
NM2和NM3的源极接地，栅极接电容C11的上极板，电容C11的下极板接地；NM2的漏极接PM4、PM6的漏极；NM3的漏极接PM5、PM6的漏极；
电容C4的上极板接PM0的漏极，下极板接PM1的漏极；电容C5的上极板接PM3的漏极，下极板接PM2的漏极；电阻R7的正端接NM2的漏极，负端接NM2的栅极；R8的正端接NM3的漏极，负端接NM3的栅极；电容C6跨接在R7的正端和R8的正端之间；电容C9的上极板接NM2的漏极，下极板接地；电容C10的上极板接NM3的漏极，下极板接地；电阻R5的正端接NM2的漏极，负端接NM0的栅极和电容C7的上极板，C7的下极板接地；电阻R6的正端接NM3的漏极，负端接NM1的栅极和电容C8的上极板，C8的下极板接地；
R9的正端接输出结点1，R9的负端为中频输出正极，接电容C13的上极板，C13的下极板接地；R10的正端接输出结点2，R10的负端为中频输出负极，接电容C14的上极板，C14的下极板接地；输出结点1是在电阻R2的负端，输出结点2是在电阻R4的负端。
本技术方案的原理如下：
本发明的返回式混频器如图1b所示，在跨导级与混频级之间串联高通滤波网络，混频级输出接低通滤波网络后耦合至跨导/放大级。经跨导/放大级放大后输出。该跨导/放大级对输入射频信号而言是一个电流复用的跨导级，对输出中频信号而言承担了中频放大器的作用。从物理结构上看，混频级的输出与跨导/放大级的输入接到一起，构成了环路。然而，由于高通/低通滤波网络的介入，射频信号在混频级的输出端被阻隔，中频信号在跨导级的输出端被阻隔。实际都没有构成反馈环路。由于射频信号与输出中频信号相差数千倍，仅用一阶无源高通/低通滤波网络即可实现可靠的隔离效果。图3所示为整个频域在该物理环路中的环路增益图，可见任何频率上的环路增益值均低于0dB，即该混频器在任何频率上均不会产生振荡。
本发明的混频器结构如图2所示，该混频器为输入输出全差分结构。跨导级差分端分别由PM0、NM0以及PM3、NM1构成。输入射频信号通过电容同时耦合至PMOS管的栅极与NMOS管的栅极。跨导级产生的射频电流通过小电容C4、C5耦合至本振级。该电容对射频信号可以全部馈通，对于中频信号近似为开路，将中频信号阻隔在混频级之前。混频级与跨导级分开偏置，便于对混频级使用更低的偏置电流从而改善混频器的噪声系数。变频后的信号从NM2和NM3管的漏极输出，经过一阶低通滤波滤除射频信号后加到NM0和NM1的栅极。在NM0和NM1的漏极形成最终中频输出。图4所示为混频级输出端的转换增益(下)与跨导放大级处输出端的转换增益(上)随输入频率变化曲线；其中本振频率为2.45GHz；从图中可以清楚看出由于返回式结构的加入，在同样的功耗与有源器件条件下，转换增益被提高了20多dB。
 有益效果
该混频器包含跨导放大级和混频级以及高通及低通滤波网络；跨导放大级为电流复用CMOS结构，将输入射频信号转化为射频电流，经过高通滤波网络去除低频成分后注入到混频级，经过混频级的调制作用生成输出中频信号。该中频信号经过低通滤波网络去除高频成分后被再次送到输入跨导放大级，经跨导放大级放大后输出，该混频器跨导级使用了电流复用技术，且输入射频和输出中频信号共用同一个跨导放大级，具有节约功耗、节约电路结构、转换增益高的特点。
 附图说明
图1a为常规混频器模块框图；
图1b为本发明的返回式电流复用混频器模块框图；
图2为本发明的返回式电流复用混频器电路原理图；
图3为本发明的返回式电流复用混频器在整个频谱范围内的内部环路增益曲线；
图4为混频级输出端的转换增益(下)与跨导放大级处输出端的转换增益(上)随输入频率变化曲线；其中本振频率为2.45GHz；
图5为输入射频信号波形(浅色曲线)、混频级输出端波形（较小幅度低频正弦波）与跨导/放大级输出端的中频信号波形（较大幅度低频正弦波）。
 本发明的实施方式
本发明的返回式电流复用混频器主体结构主要由跨导/放大级、混频级、偏置电路、滤波网络等模块构成。跨导/放大级包括P型金属氧化物场效应管（以下简称PMOS管）PM0、PM3，N型金属氧化物场效应管（以下简称NMOS管）NM0、NM1构成。PM0、NM0以及PM3、NM1构成电流复用跨导级。NM0和NM1同时作为输出中频信号的放大管，最终输出信号从NM0，NM1的漏极输出。双平衡开关PM4-PM7作为混频核心电路，由偏置管PM1和PM2提供电流偏置。跨导级的直流偏置电压由混频负载管NM2和NM3的栅极电压提供。电容C4、C5在跨导级和混频级之间，用以耦合射频信号，隔离中频输出信号。C6、R5、C7、C9以及R6、C8、C10组成低通滤波网络，用以耦合自混频级输出的中频信号至跨导/放大级，并且隔离自混频级输出的射频信号。
电容C0、C1的上极板接正输入信号端，C1的下极板接PM0的栅极；C0的下极板接NM0的栅极；电容C2、C3的上极板接正输入信号端，C3的下极板接PM3的栅极；C2的下极板接NM1的栅极；PM0的源极接电源电压，漏极接NM0的漏极；电阻R1正端接PM0的栅，负端接电阻R2的正端，R2的负端接PM0的漏极。PM3的源极接电源电压，漏极接NM1的漏极。电阻R3的正端接PM3的栅，负端接R4的正端，R4的负端接PM3的漏极。R1的负端与R3的负端同时接到电容C12的上极板，C12的下极板接地。NM0和NM1的漏极接地。PM1和PM2的源端接电源电压，栅极接电流镜栅极电压。PM4、PM5的源极接PM1的漏极，PM6、PM7的源极接PM2的漏极；本振信号正端接PM5和PM6的栅极，本振信号负端接PM4和PM7的栅极。NM2和NM3的源极接地，栅极接电容C11的上极板，电容C11的下极板接地。NM2的漏极接PM4、PM6的漏极；NM3的漏极接PM5、PM6的漏极。射频耦合电容C4的上极板接PM0的漏极，下极板接PM1的漏极；射频耦合电容C5的上极板接PM3的漏极，下极板接PM2的漏极；电阻R7的正端接NM2的漏极，负端接NM2的栅极。R8的正端接NM3的漏极，负端接NM3的栅极。电容C6跨接在R7的正端和R8的正端之间。电容C9的上极板接NM2的漏极，下极板接地。电容C10的上极板接NM3的漏极，下极板接地。电阻R5的正端接NM2的漏极，负端接NM0的栅极和电容C7的上极板，C7的下极板接地。电阻R6的正端接NM3的漏极，负端接NM1的栅极和电容C8的上极板，C8的下极板接地。R9的正端接输出结点1，R9的负端为中频输出正极，接电容C13的上极板，C13的下极板接地。R10的正端接输出结点2，R10的负端为中频输出负极，接电容C14的上极板，C14的下极板接地。
以上所述仅为本发明的较佳实施方式，本发明的保护范围并不以上述实施方式为限，但凡本领域普通技术人员根据本发明所揭示内容所作的等效修饰或变化，皆应纳入权利要求书中记载的保护范围内。

Claims (2)

  1. 一种返回式电流复用混频器，包括依次连接的跨导/放大级和混频级，其特征是跨导放大级放大输入射频信号，放大后的射频信号经过混频级产生输出中频信号；该中频信号被再次送到跨导/放大级的输入端，经跨导/放大级放大后，再作为最终的中频信号输出；
    在跨导/放大级与混频级之间串联高通滤波网络对中频信号进行阻隔；在混频级输出端与跨导/放大级之间串联低通滤波网络对射频信号进行阻隔；
    所述跨导/放大级采用电流复用结构，兼做射频的跨导级和中频的放大级。
  2. 根据权利要求1所述的返回式电流复用混频器，其特征在于：
    所述跨导/放大级包括：PMOS管PM0和PM3；NMOS管NM0和NM1；电容C0和C1；电容C2和C3；电阻R1、R2、R3和R4；
    PM0、NM0、PM3和NM1构成电流复用跨导级；NM0和NM1同时作为输出中频信号的放大管，最终输出信号从NM0，NM1的漏极输出；
    所述混频级包括：双平衡开关PM4、PM5、PM6和PM7；用作偏置管的PMOS管PM1和PM2；PM4～PM7构成混频核心电路，由PM1和PM2提供电流偏置；用作混频负载的NMOS管NM2和NM3；
    跨导级的直流偏置电压由NM2和NM3的栅极电压提供；在跨导级和混频级之间连接射频耦合电容C4和C5作为高通滤波网络，用以耦合射频信号，隔离最终的中频信号输出；
    所述低通滤波网络包括C6、R5、C7、C9以及R6、C8、C10，用以耦合自混频级输出的中频信号至跨导/放大级，并且隔离自混频级输出的射频信号；
    电容C0、C1的上极板接正输入信号端，C1的下极板接PM0的栅极；C0的下极板接NM0的栅极；电容C2、C3的上极板接正输入信号端，C3的下极板接PM3的栅极；C2的下极板接NM1的栅极；
    PM0的源极接电源电压，漏极接NM0的漏极；电阻R1正端接PM0的栅极，负端接电阻R2的正端，R2的负端接PM0的漏极；PM3的源极接电源电压，漏极接NM1的漏极；电阻R3的正端接PM3的栅极，负端接R4的正端，R4的负端接PM3的漏极；R1的负端与R3的负端同时接到电容C12的上极板，C12的下极板接地；
    NM0和NM1的漏极接地；PM1和PM2的源端接电源电压，栅极接电流镜栅极电压；PM4、PM5的源极接PM1的漏极，PM6、PM7的源极接PM2的漏极；本振信号正端接PM5和PM6的栅极，本振信号负端接PM4和PM7的栅极；
    NM2和NM3的源极接地，栅极接电容C11的上极板，电容C11的下极板接地；NM2的漏极接PM4、PM6的漏极；NM3的漏极接PM5、PM6的漏极；
    电容C4的上极板接PM0的漏极，下极板接PM1的漏极；电容C5的上极板接PM3的漏极，下极板接PM2的漏极；电阻R7的正端接NM2的漏极，负端接NM2的栅极；R8的正端接NM3的漏极，负端接NM3的栅极；电容C6跨接在R7的正端和R8的正端之间；电容C9的上极板接NM2的漏极，下极板接地；电容C10的上极板接NM3的漏极，下极板接地；电阻R5的正端接NM2的漏极，负端接NM0的栅极和电容C7的上极板，C7的下极板接地；电阻R6的正端接NM3的漏极，负端接NM1的栅极和电容C8的上极板，C8的下极板接地；
    R9的正端接输出结点1，R9的负端为中频输出正极，接电容C13的上极板，C13的下极板接地；R10的正端接输出结点2，R10的负端为中频输出负极，接电容C14的上极板，C14的下极板接地；输出结点1是在电阻R2的负端，输出结点2是在电阻R4的负端。
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CN101902202A (zh) * 2009-05-27 2010-12-01 晨星软件研发(深圳)有限公司 具有高线性度与低工作电压的混频器
CN102111109A (zh) * 2011-01-11 2011-06-29 东南大学 一种返回式电流复用混频器

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WO2012094892A3 (zh) 2013-05-02

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