WO2012093907A3 - 경화성 조성물 - Google Patents

경화성 조성물 Download PDF

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Publication number
WO2012093907A3
WO2012093907A3 PCT/KR2012/000181 KR2012000181W WO2012093907A3 WO 2012093907 A3 WO2012093907 A3 WO 2012093907A3 KR 2012000181 W KR2012000181 W KR 2012000181W WO 2012093907 A3 WO2012093907 A3 WO 2012093907A3
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WO
WIPO (PCT)
Prior art keywords
curable composition
composition
exhibit
resistance
whitening
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Application number
PCT/KR2012/000181
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English (en)
French (fr)
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WO2012093907A2 (ko
Inventor
최범규
고민진
문명선
정재호
강대호
김민균
조병규
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주식회사 엘지화학
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Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to CN201280011888.8A priority Critical patent/CN103429665B/zh
Priority to EP12731982.0A priority patent/EP2662410B1/en
Publication of WO2012093907A2 publication Critical patent/WO2012093907A2/ko
Publication of WO2012093907A3 publication Critical patent/WO2012093907A3/ko
Priority to US13/935,852 priority patent/US8921496B2/en

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

본 발명은, 경화성 조성물 및 그 용도에 관한 것이다. 하나의 예시적인 경화성 조성물은, 우수한 가공성 및 작업성을 나타낼 수 있다. 또한, 상기 경화성 조성물은, 경화 전 또는 후에 높은 굴절률을 나타낼 수 있다. 상기 조성물은 경화 전 또는 후에 수분 투과율이 낮고, 균열 내성, 내열 충격성, 접착성 및 경도가 우수하다. 또한, 상기 조성물은 고온 또는 고습 조건에서 백탁 등의 색변화를 유발하지 않고, 표면에서의 끈적임도 나타내지 않는다. 하나의 예시에서 상기 경화성 조성물은, LED, CCD, 포토 커플러 또는 광전지 등과 같은 반도체 소자에 대한 접착 소재 또는 봉지 소재 등으로 사용될 수 있다.
PCT/KR2012/000181 2011-01-06 2012-01-06 경화성 조성물 WO2012093907A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280011888.8A CN103429665B (zh) 2011-01-06 2012-01-06 可固化组合物
EP12731982.0A EP2662410B1 (en) 2011-01-06 2012-01-06 Curable composition
US13/935,852 US8921496B2 (en) 2011-01-06 2013-07-05 Curable composition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0001476 2011-01-06
KR20110001476 2011-01-06
KR1020120002155A KR101547381B1 (ko) 2011-01-06 2012-01-06 경화성 조성물
KR10-2012-0002155 2012-01-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/935,852 Continuation US8921496B2 (en) 2011-01-06 2013-07-05 Curable composition

Publications (2)

Publication Number Publication Date
WO2012093907A2 WO2012093907A2 (ko) 2012-07-12
WO2012093907A3 true WO2012093907A3 (ko) 2012-11-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000181 WO2012093907A2 (ko) 2011-01-06 2012-01-06 경화성 조성물

Country Status (5)

Country Link
US (1) US8921496B2 (ko)
EP (1) EP2662410B1 (ko)
KR (1) KR101547381B1 (ko)
CN (1) CN103429665B (ko)
WO (1) WO2012093907A2 (ko)

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* Cited by examiner, † Cited by third party
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JP5893212B2 (ja) * 2012-07-27 2016-03-23 エルジー・ケム・リミテッド 硬化性組成物
KR101560044B1 (ko) 2012-07-27 2015-10-15 주식회사 엘지화학 경화성 조성물
JP6108132B2 (ja) * 2012-07-27 2017-04-05 エルジー・ケム・リミテッド 硬化性組成物
KR101591146B1 (ko) * 2012-07-27 2016-02-02 주식회사 엘지화학 경화성 조성물
TWI506094B (zh) * 2012-07-27 2015-11-01 Lg Chemical Ltd 可固化組成物
KR101566529B1 (ko) 2012-12-07 2015-11-05 제일모직주식회사 광학기기용 경화형 폴리실록산 조성물, 봉지재 및 광학기기
US9657143B2 (en) 2012-12-26 2017-05-23 Cheil Industries, Inc. Curable polysiloxane composition for optical device and encapsulant and optical device
US20150344735A1 (en) * 2012-12-28 2015-12-03 Dow Corning Toray Co., Ltd. Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device
JP5985981B2 (ja) 2012-12-28 2016-09-06 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
EP3010988B1 (en) * 2013-06-17 2017-03-08 Akzo Nobel Coatings International B.V. High-solids coating composition
TWI653295B (zh) * 2014-02-04 2019-03-11 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
TWI624510B (zh) * 2014-02-04 2018-05-21 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
JP6230727B2 (ja) * 2014-12-25 2017-11-15 日本山村硝子株式会社 フェニル変性ハイブリッドプレポリマー、フェニル変性ポリジメチルシロキサン系ハイブリッドプレポリマー及びフェニル変性ポリジメチルシロキサン系ハイブリッドポリマー並びにそれらの製造方法

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Also Published As

Publication number Publication date
US8921496B2 (en) 2014-12-30
WO2012093907A2 (ko) 2012-07-12
KR101547381B1 (ko) 2015-08-26
EP2662410A2 (en) 2013-11-13
US20130296514A1 (en) 2013-11-07
KR20120080141A (ko) 2012-07-16
CN103429665A (zh) 2013-12-04
EP2662410B1 (en) 2018-09-19
CN103429665B (zh) 2015-04-22
EP2662410A4 (en) 2014-05-14

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